Memory and Storage Systems
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Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies. -
Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
Magnetic storage- From magnetic tape to HDD Juhász Levente 2016.02.24 Table of contents 1. Introduction 2. Magnetic tape 3. Magnetic-core memory 4. Bubble memory 5. Hard disk drive 6. Applications, future prospects 7. References 1. Magnetic storage - introduction Magnetic storage: Recording & storage of data on a magnetised medium A form of „non-volatile” memory Data accessed using read/write heads Widely used for computer data storage, audio and video applications, magnetic stripe cards etc. 1. Magnetic storage - introduction 2. Magnetic tape 1928 Germany: Magnetic tape for audio recording by Fritz Pfleumer • Fe2O3 coating on paper stripes, further developed by AEG & BASF 1951: UNIVAC- first use of magnetic tape for data storage • 12,7 mm Ni-plated brass-phosphorus alloy tape • 128 characters /inch data density • 7000 ch. /s writing speed 2. Magnetic tape 2. Magnetic tape 1950s: IBM : patented magnetic tape technology • 12,7 mm wide magnetic tape on a 26,7 cm reel • 370-730 m long tapes 1980: 1100 m PET –based tape • 18 cm reel for developers • 7, 9 stripe tapes (8 bit + parity) • Capacity up to 140 MB DEC –tapes for personal use 2. Magnetic tape 2014: Sony & IBM recorded 148 Gbit /squareinch tape capacity 185 TB! 2. Magnetic tape Remanent structural change in a magnetic medium Analog or digital recording (binary storage) Longitudinal or perpendicular recording Ni-Fe –alloy core in tape head 2. Magnetic tape Hysteresis in magnetic recording 40-150 kHz bias signal applied to the tape to remove its „magnetic history” and „stir” the magnetization Each recorded signal will encounter the same magnetic condition Current in tape head proportional to the signal to be recorded 2. -
Archiving Online Data to Optical Disk
ARCHIVING ONLINE DATA TO OPTICAL DISK By J. L. Porter, J. L. Kiesler, and D. A. Stedfast U.S. GEOLOGICAL SURVEY Open-File Report 90-575 Reston, Virginia 1990 U.S. DEPARTMENT OF THE INTERIOR MANUEL LUJAN, JR., Secretary U.S. GEOLOGICAL SURVEY Dallas L. Peck, Director For additional information Copies of this report can be write to: purchased from: Chief, Distributed Information System U.S. Geological Survey U.S. Geological Survey Books and Open-File Reports Section Mail Stop 445 Federal Center, Bldg. 810 12201 Sunrise Valley Drive Box 25425 Reston, Virginia 22092 Denver, Colorado 80225 CONTENTS Page Abstract ............................................................. 1 Introduction ......................................................... 2 Types of optical storage ............................................... 2 Storage media costs and alternative media used for data archival. ......... 3 Comparisons of storage media ......................................... 3 Magnetic compared to optical media ............................... 3 Compact disk read-only memory compared to write-once/read many media ................................... 6 Erasable compared to write-once/read many media ................. 7 Paper and microfiche compared to optical media .................... 8 Advantages of write-once/read-many optical storage ..................... 8 Archival procedure and results ........................................ 9 Summary ........................................................... 13 References .......................................................... -
The Future of Data Storage Technologies
International Technology Research Institute World Technology (WTEC) Division WTEC Panel Report on The Future of Data Storage Technologies Sadik C. Esener (Panel Co-Chair) Mark H. Kryder (Panel Co-Chair) William D. Doyle Marvin Keshner Masud Mansuripur David A. Thompson June 1999 International Technology Research Institute R.D. Shelton, Director Geoffrey M. Holdridge, WTEC Division Director and ITRI Series Editor 4501 North Charles Street Baltimore, Maryland 21210-2699 WTEC Panel on the Future of Data Storage Technologies Sponsored by the National Science Foundation, Defense Advanced Research Projects Agency and National Institute of Standards and Technology of the United States government. Dr. Sadik C. Esener (Co-Chair) Dr. Marvin Keshner Dr. David A. Thompson Prof. of Electrical and Computer Director, Information Storage IBM Fellow Engineering & Material Sciences Laboratory Research Division Dept. of Electrical & Computer Hewlett-Packard Laboratories International Business Machines Engineering 1501 Page Mill Road Corporation University of California, San Diego Palo Alto, CA 94304-1126 Almaden Research Center 9500 Gilman Drive Mail Stop K01/802 La Jolla, CA 92093-0407 Dr. Masud Mansuripur 650 Harry Road Optical Science Center San Jose, CA 95120-6099 Dr. Mark H. Kryder (Co-Chair) University of Arizona Director, Data Storage Systems Center Tucson, AZ 85721 Carnegie Mellon University Roberts Engineering Hall, Rm. 348 Pittsburgh, PA 15213-3890 Dr. William D. Doyle Director, MINT Center University of Alabama Box 870209 Tuscaloosa, AL 35487-0209 INTERNATIONAL TECHNOLOGY RESEARCH INSTITUTE World Technology (WTEC) Division WTEC at Loyola College (previously known as the Japanese Technology Evaluation Center, JTEC) provides assessments of foreign research and development in selected technologies under a cooperative agreement with the National Science Foundation (NSF). -
3 Secondary Storage.PDF
CAPE COMPUTER SCIENCE SECONDARY STORAGE Secondary storage is needed 1. because there is a limit on the size of primary memory (due to cost) and 2. because RAM is volatile and so data needed for future use must be stored somewhere else so that it can be retrieved when necessary. Secondary storage is also used for backup and archives. When we consider secondary storage devices we must bear in mind the following characteristics of each device : Capacity Access speed Access method and portability Floppy Disk This is a 3.5 inch magnetic disk of flexible material which until recently was a standard feature on most microcomputers. Typically it stores 1.44 MB of data. It’s a thin plastic circle coated with a magnetic material and encased in a rigid plastic to protect it. A metal sliding access shuttle opens when the disk is in the machine allowing the read/write head access to the disk. Data can be written to and erased from a floppy disk. A write protect tab can be used to prevent accidental overwriting of data. Before data can be written to a disk, it must be formatted. This prepares the disk for use by creating a magnetic map on the disks surface. This map consists of tracks and sectors. Formatting also prepares the file allocation table (FAT). The address of a file on a floppy disk is comprised of the track number and the sector number. Floppy disks are direct access devices but they are slow compared to hard disks. The floppies great advantage has been its use as a device to help transport small files between machines. -
Computer Files & Data Storage
STORAGE & FILE CONCEPTS, UTILITIES (Pages 6, 150-158 - Discovering Computers & Microsoft Office 2010) I. Computer files – data, information or instructions residing on secondary storage are stored in the form of a file. A. Software files are also called program files. Program files (instructions) are created by a computer programmer and generally cannot be modified by a user. It’s important that we not move or delete program files because your computer requires them to perform operations. Program files are also referred to as “executables”. 1. You can identify a program file by its extension:“.EXE”, “.COM”, “.BAT”, “.DLL”, “.SYS”, or “.INI” (there are others) or a distinct program icon. B. Data files - when you select a “save” option while using an application program, you are in essence creating a data file. Users create data files. 1. File naming conventions refer to the guidelines followed while assigning file names and will vary with the operating system and application in use (see figure 4-1). File names in Windows 7 may be up to 255 characters, you're not allowed to use reserved characters or certain reserved words. File extensions are used to identify the application that was used to create the file and format data in a manner recognized by the source application used to create it. FALL 2012 1 II. Selecting secondary storage media A. There are three type of technologies for storage devices: magnetic, optical, & solid state, there are advantages & disadvantages between them. When selecting a secondary storage device, certain factors should be considered: 1. Capacity - the capacity of computer storage is expressed in bytes. -
Unit 5: Memory Organizations
Memory Organizations Unit 5: Memory Organizations Introduction This unit considers the organization of a computer's memory system. The characteristics of the most important storage technologies are described in detail. Basically memories are classified as main memory and secondary memory. Main memory with many different categories are described in Lesson 1. Lesson 2 focuses the secondary memory including the details of floppy disks and hard disks. Lesson 1: Main Memory 1.1 Learning Objectives On completion of this lesson you will be able to : • describe the memory organization • distinguish between ROM, RAM, PROM, EEPROM and • other primary memory elements. 1.2 Organization Computer systems combine binary digits to form groups called words. The size of the word varies from system to system. Table 5.1 illustrates the current word sizes most commonly used with the various computer systems. Two decades ago, IBM introduced their 8-bit PC. This was Memory Organization followed a few years later by the 16-bit PC AT microcomputer, and already it has been replaced with 32- and 64-bit systems. The machine with increased word size is generally faster because it can process more bits of information in the same time span. The current trend is in the direction of the larger word size. Microcomputer main memories are generally made up of many individual chips and perform different functions. The ROM, RAM, Several types of semi- PROM, and EEPROM memories are used in connection with the conductor memories. primary memory of a microcomputers. The main memory generally store computer words as multiple of bytes; each byte consisting of eight bits. -
SŁOWNIK POLSKO-ANGIELSKI ELEKTRONIKI I INFORMATYKI V.03.2010 (C) 2010 Jerzy Kazojć - Wszelkie Prawa Zastrzeżone Słownik Zawiera 18351 Słówek
OTWARTY SŁOWNIK POLSKO-ANGIELSKI ELEKTRONIKI I INFORMATYKI V.03.2010 (c) 2010 Jerzy Kazojć - wszelkie prawa zastrzeżone Słownik zawiera 18351 słówek. Niniejszy słownik objęty jest licencją Creative Commons Uznanie autorstwa - na tych samych warunkach 3.0 Polska. Aby zobaczyć kopię niniejszej licencji przejdź na stronę http://creativecommons.org/licenses/by-sa/3.0/pl/ lub napisz do Creative Commons, 171 Second Street, Suite 300, San Francisco, California 94105, USA. Licencja UTWÓR (ZDEFINIOWANY PONIŻEJ) PODLEGA NINIEJSZEJ LICENCJI PUBLICZNEJ CREATIVE COMMONS ("CCPL" LUB "LICENCJA"). UTWÓR PODLEGA OCHRONIE PRAWA AUTORSKIEGO LUB INNYCH STOSOWNYCH PRZEPISÓW PRAWA. KORZYSTANIE Z UTWORU W SPOSÓB INNY NIŻ DOZWOLONY NA PODSTAWIE NINIEJSZEJ LICENCJI LUB PRZEPISÓW PRAWA JEST ZABRONIONE. WYKONANIE JAKIEGOKOLWIEK UPRAWNIENIA DO UTWORU OKREŚLONEGO W NINIEJSZEJ LICENCJI OZNACZA PRZYJĘCIE I ZGODĘ NA ZWIĄZANIE POSTANOWIENIAMI NINIEJSZEJ LICENCJI. 1. Definicje a."Utwór zależny" oznacza opracowanie Utworu lub Utworu i innych istniejących wcześniej utworów lub przedmiotów praw pokrewnych, z wyłączeniem materiałów stanowiących Zbiór. Dla uniknięcia wątpliwości, jeżeli Utwór jest utworem muzycznym, artystycznym wykonaniem lub fonogramem, synchronizacja Utworu w czasie z obrazem ruchomym ("synchronizacja") stanowi Utwór Zależny w rozumieniu niniejszej Licencji. b."Zbiór" oznacza zbiór, antologię, wybór lub bazę danych spełniającą cechy utworu, nawet jeżeli zawierają nie chronione materiały, o ile przyjęty w nich dobór, układ lub zestawienie ma twórczy charakter. -
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UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. -
The Effects of Magnetic Fields on Magnetic Storage Media Used in Computers
NITED STATES ARTMENT OF MMERCE NBS TECHNICAL NOTE 735 BLICATION of Magnetic Fields on Magnetic Storage Media Used in Computers — NATIONAL BUREAU OF STANDARDS The National Bureau of Standards^ was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation^—Nuclear Radiation^—Applied Radiation-—Quantum Electronics' Electromagnetics^—Time and Frequency'—Laboratory Astrophysics'—Cryo- genics'. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials. -
EE 4504 Computer Organization Overview
Overview Historically, the limiting factor in a computer’s performance has been memory access time – Memory speed has been slow compared to the speed of the processor EE 4504 – A process could be bottlenecked by the memory Computer Organization system’s inability to “keep up” with the processor Our goal in this section is to study the development of an effective memory Section 3 organization that supports the processing Computer Memory power of the CPU – General memory organization and performance – “Internal” memory components and their use – “External” memory components and their use Reading: Text, chapters 4 and 5 EE 4504 Section 3 1 EE 4504 Section 3 2 1 Terminology Capacity: the amount of information that Access time: can be contained in a memory unit -- – For RAM, the time to address the unit and usually in terms of words or bytes perform the transfer Word: the natural unit of organization in – For non-random access memory, the time to position the R/W head over the desired location the memory, typically the number of bits used to represent a number Memory cycle time: Access time plus any other time required before a second access Addressable unit: the fundamental data can be started element size that can be addressed in the memory -- typically either the word size or Access technique: how are memory individual bytes contents accessed – Random access: Unit of transfer: The number of data » Each location has a unique physical address elements transferred at a time -- usually » Locations can be accessed in any order and bits in main -
Dissertation
ADAM: A Decentralized Parallel Computer Architecture Featuring Fast Thread and Data Migration and a Uniform Hardware Abstraction by Andrew “bunnie” Huang Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of Doctor of Philosophy at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY June 2002 c Massachusetts Institute of Technology 2002. All rights reserved. Author........................................................................... Department of Electrical Engineering and Computer Science May 24, 2002 Certifiedby....................................................................... Thomas F. Knight, Jr. Senior Research Scientist Thesis Supervisor Accepted by ...................................................................... Arthur C. Smith Chairman, Department Committee on Graduate Students 2 ADAM: A Decentralized Parallel Computer Architecture Featuring Fast Thread and Data Migration and a Uniform Hardware Abstraction by Andrew “bunnie” Huang Submitted to the Department of Electrical Engineering and Computer Science on May 24, 2002, in partial fulfillment of the requirements for the degree of Doctor of Philosophy Abstract The furious pace of Moore’s Law is driving computer architecture into a realm where the the speed of light is the dominant factor in system latencies. The number of clock cycles to span a chip are increasing, while the number of bits that can be accessed within a clock cycle is decreasing. Hence, it is becoming more difficult to hide latency. One alternative solution is to reduce latency by migrating threads and data, but the overhead of existing implementations has previously made migration an unserviceable solution so far. I present an architecture, implementation, and mechanisms that reduces the overhead of mi- gration to the point where migration is a viable supplement to other latency hiding mechanisms, such as multithreading.