Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
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The Design of a Drum Memory System
Scholars' Mine Masters Theses Student Theses and Dissertations 1967 The design of a drum memory system Frederick W. Lynch Follow this and additional works at: https://scholarsmine.mst.edu/masters_theses Part of the Electrical and Computer Engineering Commons Department: Recommended Citation Lynch, Frederick W., "The design of a drum memory system" (1967). Masters Theses. 5163. https://scholarsmine.mst.edu/masters_theses/5163 This thesis is brought to you by Scholars' Mine, a service of the Missouri S&T Library and Learning Resources. This work is protected by U. S. Copyright Law. Unauthorized use including reproduction for redistribution requires the permission of the copyright holder. For more information, please contact [email protected]. THE DESIGN OF A DRUM MEMORY SYSTEM BY FREDERICK W. LYNCH A l'HESIS 129533 submitted to the faculty of the UNIVERSITY OF MISSOURI AT ROLLA in partial fulfillment of the requirements for the Degree of MASTER OF SCIENCE IN ELECTRICAL ENGINEERING Rolla, Missouri I"",,--;;'d I ~ 1967 rfJ·.dfl c, I ii ABSTRACT Three methods for obtaining an auxiliary memory for an SeC-6S0 (Scientific Control Corporation) digital computer are presented. A logic design is then developed on the basis of using the drum and write circuits from an available IBM-6S0 digital computer and con structing the remaining logic functions. The results of the logic design are the transfer equations necessary to implement the memory system. iii ACKNOWLEDGMENT The author wishes to express his sincere appreciation to his major professor, Dr. James Tracey, for guidance and support in the preparation of this thesis. iv TABLE OF CONTENTS Page ABSTRACT ii ACKNm>JLEDGlVIENT iii LIST OF FIGURES v LIST OF TABLES vi I. -
DRAM EMAIL GIM Teams!!!/Teaming Issues •Memories in Verilog •Memories on the FPGA
Memories & More •Overview of Memories •External Memories •SRAM (async, sync) •Flash •DRAM EMAIL GIM teams!!!/teaming Issues •Memories in Verilog •Memories on the FPGA 10/18/18 6.111 Fall 2018 1 Memories: a practical primer • The good news: huge selection of technologies • Small & faster vs. large & slower • Every year capacities go up and prices go down • Almost cost competitive with hard disks: high density, fast flash memories • Non-volatile, read/write, no moving parts! (robust, efficient) • The bad news: perennial system bottleneck • Latencies (access time) haven’t kept pace with cycle times • Separate technology from logic, so must communicate between silicon, so physical limitations (# of pins, R’s and C’s and L’s) limit bandwidths • New hopes: capacitive interconnect, 3D IC’s • Likely the limiting factor in cost & performance of many digital systems: designers spend a lot of time figuring out how to keep memories running at peak bandwidth • “It’s the memory - just add more faster memory” 10/18/18 6.111 Fall 2018 2 How do we Electrically Remember Things? • We can convey/transfer information with voltages that change over time • How can we store information in an electrically accessible manner? • Store in either: • Electric Field • Magnetic Field 10/18/18 6.111 Fall 2018 3 Mostly focus on rewritable • Punched Cards have existed as electromechanical program storage since ~1800s • We’re mostly concerned with rewritable storage mechanisms today (cards were true Computer program in punched card format ROMs) https://en.wiKipedia.org/wiKi/Computer_programming_in_the_ -
Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies. -
Magnetic Recording and Readout Memory
SNS college of Technology Coimbatore-641 035 MAGNETIC RECORDING AND READOUT MEMORY Nowadays, large number of information are stored in (or) retrieved from the storage devices, by using devices is magnetic recording heads and they function according to the principle of magnetic induction. Generally Ferro or Ferrimagnetic materials are used in the storage devices because in this type of materials only the magnetic interaction between only two dipoles align themselves parallel to each other. Due to this parallel alignment even if we apply small amount of magnetic field, a large value of magnetization is produced. By using this property information are stored in storage devices. In the storage devices, the recording of digital data (0‟s and 1‟s) depends upon the direction of magnetization in the medium. Magnetic parameters for Recording 1. When current is passed through a coil, a magnetic field is induced. This principle called “Electromagnetic Induction” is used in storage devices. 2. The case with which the material can be magnetized is another parameter. 3. We know the soft magnetic materials are the materials which can easily be magnetized and demagnetized. Hence a data can be stored and erased easily. Such magnetic materials are used in temporary storage devices. 4. Similarly, we know hard magnetic materials cannot be easily magnetized and demagnetized. So such magnetic materials are used in permanent storage devices. 5. In soft magnetic materials, the electrical resistance varies with respect to the magnetization and this effect is called magneto-resistance. This parameter is used in specific thin film systems. 19PYB102 & PHYSICS OF MATERIALS AND PHOTONICS D.SENGOTTAIYAN /AP/PHYSICS Page 1 SNS college of Technology Coimbatore-641 035 The magnetic medium is made of magnetic materials (Ferro or Ferric oxide) deposited on this plastic. -
Influence of U.S. Cryptologic Organizations on the Digital Computer Industry
UNCLASSIFIED Influence of U.S. Cryptologic Organizations on the Digital Computer Industry SAMUELS. SNYDER This article was originally published in two parts in the Fall 1977 and Winter 1978 issues o{Cryptologic Spectrum (Vol. 7, No. 4 and Vol. 8, No. 2). INTRODUCTION An unfortunate aspect of historical accounts of computer lore in open sources is the omission - conspicuously to some of us - of mention of the U.S. cryptologic organizations, or of the contributions by these organizations which helped in laying the foundation of the computer industry. NSA, and other cryptologic organizations, have been required over the years to observe a policy of anonymity, and with good reason. But in the age of maturing appreciation of the role of computers in nearly all civilized endeavors, it is time to acknowledge, for the first time, their outstanding contributions to the computer industry. The reader will notice the absence of remarks concerning software efforts by cryptologic organizations. While this side of their operations received its proper share of support, space restrictions preclude its inclusion in this article. Also, the Army and Navy cryptologic services have frequently changed organizational titles throughout the years. Therefore, to avoid confusion in this article, they are, previous to 1945, referred to as "Army," "Navy," "service cryptologic organizations," and the like. Too, NSA's predecessor organization, AFSA, was established in 1949, and NSA in 1952. Consequently, references to "NSA" and "Agency" are, on occasion, used interchangeably, the particular agency referred to depending upon the time period being discussed. EARLY DEVELOPMENTS The development of the U.S. computer industry might have been delayed for years ifit had not been for the stimulus and financial support of the U.S. -
Computer Peripheral Memory System Forecast
OF NBS H^^LK,!,, STAND S. TECH PUBLICATIONS | COMPUTER SUici^CZ^i TECHNOLOGY: COMPUTER PERIPHERAL MEMORY SYSTEM FORECAST QC 100 U57 NBS Special Publication 500-45 #500-45 U.S. DEPARTMENT OF COMMERCE 1979 National Bureau of Standards NATIONAL BUREAU OF STANDARDS The National Bureau of Standards' was established by an act of Congress March 3, 1901 . The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau's technical work is performed by the National Measurement Laboratory, the National Engineering Laboratory, and the Institute for Computer Sciences and Technology. THE NATIONAL MEASUREMENT LABORATORY provides the national system of physical and chemical and materials measurement; coordinates the system with measurement systems of other nations and furnishes essential services leading to accurate and uniform physical and chemical measurement throughout the Nation's scientific community, industry, and commerce; conducts materials research leading to improved methods of measurement, standards, and data on the properties of materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government Agencies; develops, produces, and distributes Standard Reference Materials; and provides calibration services. The Laboratory consists of the following centers: Absolute Physical Quantities^ — Radiation Research — Thermodynamics and Molecular Science — Analytical Chemistry — Materials Science. -
Qt2t0089x7 Nosplash Af5b9567
UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. -
The Effects of Magnetic Fields on Magnetic Storage Media Used in Computers
NITED STATES ARTMENT OF MMERCE NBS TECHNICAL NOTE 735 BLICATION of Magnetic Fields on Magnetic Storage Media Used in Computers — NATIONAL BUREAU OF STANDARDS The National Bureau of Standards^ was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation's physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation's scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation^—Nuclear Radiation^—Applied Radiation-—Quantum Electronics' Electromagnetics^—Time and Frequency'—Laboratory Astrophysics'—Cryo- genics'. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research lead- ing to improved methods of measurement, standards, and data on the properties of well-characterized materials needed by industry, commerce, educational institutions, and Government; provides advisory and research services to other Government agencies; and develops, produces, and distributes standard reference materials. -
Memory Krste Asanovic [email protected]
CS252 Graduate Computer Architecture Fall 2015 Lecture 11: Memory Krste Asanovic [email protected] http://inst.eecs.berkeley.edu/~cs252/fa15 CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 Last Time in Lecture 10 VLIW Machines § Compiler-controlled stac scheduling § Loop unrolling § SoEware pipelining § Trace scheduling § Rotang register file § Predicaon § Limits of stac scheduling CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 2 Early Read-Only Memory Technologies Punched cards, From early 1700s through Jaquard Loom, Punched paper tape, Babbage, and then IBM instrucCon stream in Harvard Mk 1 Diode Matrix, EDSAC-2 µcode store IBM Balanced Capacitor ROS IBM Card Capacitor ROS CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 3 Early Read/Write Main Memory Technologies Babbage, 1800s: Digits stored on mechanical wheels Williams Tube, Manchester Mark 1, 1947 Mercury Delay Line, Univac 1, 1951 Also, regenerave capacitor memory on Atanasoff-Berry computer, and rotang magneCc drum memory on IBM 650 CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 4 MIT Whirlwind Core Memory CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 5 Core Memory § Core memory was first large scale reliable main memory - invented by Forrester in late 40s/early 50s at MIT for Whirlwind project § Bits stored as magneCzaon polarity on small ferrite cores threaded onto two-dimensional grid of wires § Coincident current pulses on X and Y wires would write cell and also sense original state (destrucCve reads) § Robust, non-volale storage § Used on space shugle computers § Cores threaded onto wires by hand (25 billion a year at peak producCon) § Core access Cme ~ 1µs DEC PDP-8/E Board, 4K words x 12 bits, (1968) CS252, Fall 2015, Lecture 11 © Krste Asanovic, 2015 6 Semiconductor Memory § Semiconductor memory began to be compeCCve in early 1970s - Intel formed to exploit market for semiconductor memory - Early semiconductor memory was Stac RAM (SRAM). -
Lecture 8: Main Memory System
18-740/640 Computer Architecture Lecture 8: Main Memory System Prof. Onur Mutlu Carnegie Mellon University Fall 2015, 9/28/2015 Required Readings Required Reading Assignment: • Sec. 1 & 3 of B. Jacob, “The Memory System: You Can’t Avoid It, You Can’t Ignore It, You Can’t Fake It,” Synthesis Lectures on Computer Architecture, 2009. Recommended References: • O. Mutlu and L. Subramanian, “Research Problems and Opportunities in Memory Systems,” Supercomputing Frontiers and Innovations, 2015. • Lee et al., “Phase Change Technology and the Future of Main Memory,” IEEE Micro, Jan/Feb 2010. • Y. Kim, W. Yang, O. Mutlu, “Ramulator: A Fast and Extensible DRAM Simulator,” IEEE Computer Architecture Letters, May 2015. 2 State-of-the-art in Main Memory… Onur Mutlu and Lavanya Subramanian, "Research Problems and Opportunities in Memory Systems" Invited Article in Supercomputing Frontiers and Innovations (SUPERFRI), 2015. 3 Recommended Readings on DRAM DRAM Organization and Operation Basics Sections 1 and 2 of: Lee et al., “Tiered-Latency DRAM: A Low Latency and Low Cost DRAM Architecture,” HPCA 2013. http://users.ece.cmu.edu/~omutlu/pub/tldram_hpca13.pdf Sections 1 and 2 of Kim et al., “A Case for Subarray-Level Parallelism (SALP) in DRAM,” ISCA 2012. http://users.ece.cmu.edu/~omutlu/pub/salp-dram_isca12.pdf DRAM Refresh Basics Sections 1 and 2 of Liu et al., “RAIDR: Retention-Aware Intelligent DRAM Refresh,” ISCA 2012. http://users.ece.cmu.edu/~omutlu/pub/raidr-dram- refresh_isca12.pdf 4 Simulating Main Memory How to evaluate future main memory systems? An open-source simulator and its brief description Yoongu Kim, Weikun Yang, and Onur Mutlu, "Ramulator: A Fast and Extensible DRAM Simulator" IEEE Computer Architecture Letters (CAL), March 2015. -
Random Access Memory (Ram)
www.studymafia.org A Seminar report On RANDOM ACCESS MEMORY (RAM) Submitted in partial fulfillment of the requirement for the award of degree of Bachelor of Technology in Computer Science SUBMITTED TO: SUBMITTED BY: www.studymafia.org www.studymafia.org www.studymafia.org Acknowledgement I would like to thank respected Mr…….. and Mr. ……..for giving me such a wonderful opportunity to expand my knowledge for my own branch and giving me guidelines to present a seminar report. It helped me a lot to realize of what we study for. Secondly, I would like to thank my parents who patiently helped me as i went through my work and helped to modify and eliminate some of the irrelevant or un-necessary stuffs. Thirdly, I would like to thank my friends who helped me to make my work more organized and well-stacked till the end. Next, I would thank Microsoft for developing such a wonderful tool like MS Word. It helped my work a lot to remain error-free. Last but clearly not the least, I would thank The Almighty for giving me strength to complete my report on time. www.studymafia.org Preface I have made this report file on the topic RANDOM ACCESS MEMORY (RAM); I have tried my best to elucidate all the relevant detail to the topic to be included in the report. While in the beginning I have tried to give a general view about this topic. My efforts and wholehearted co-corporation of each and everyone has ended on a successful note. I express my sincere gratitude to …………..who assisting me throughout the preparation of this topic. -
Memory and Storage Systems
CHAPTER 3 MEMORY AND STORAGE SYSTEMS Chapter Outline Chapter Objectives 3.1 Introduction In this chapter, we will learn: 3.2 Memory Representation ∑ The concept of memory and its 3.3 Random Access Memory representation. 3.3.1 Static RAM ∑ How data is stored in Random Access 3.3.2 Dynamic RAM Memory (RAM) and the various types of 3.4 Read Only Memory RAM. 3.4.1 Programmable ROM ∑ How data is stored in Read Only Memory 3.4.2 Erasable PROM (ROM) and the various types of ROM. 3.4.3 Electrically Erasable PROM ∑ The concept of storage systems and the 3.4.4 Flash ROM various types of storage systems. 3.5 Storage Systems ∑ The criteria for evaluating storage 3.6 Magnetic Storage Systems systems. 3.6.1 Magnetic Tapes 3.6.2 Magnetic Disks 3.7 Optical Storage Systems 3.1 INTRODUCTION 3.7.1 Read only Optical Disks 3.7.2 Write Once, Read Many Disks Computers are used not only for processing of data 3.8 Magneto Optical Systems for immediate use, but also for storing of large 3.8.1 Principle used in Recording Data volume of data for future use. In order to meet 3.8.2 Architecture of Magneto Optical Disks these two specifi c requirements, computers use two 3.9 Solid-State Storage Devices types of storage locations—one, for storing the data 3.9.1 Structure of SSD that are being currently handled by the CPU and the 3.9.2 Advantages of SSD other, for storing the results and the data for future 3.9.3 Disadvantages of SSD use.