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Multigate device
Estimation of Power Dissipation of CMOS and Finfet Based 6T SRAM Memory M
Page 1 Last Updated June 02, 2016 Title Dr. First Name Manoj Last Name Saxena Photograph Designation Associate Prof
A Survey on Multi Gate MOSFETS
Design Strategies for Ultralow Power 10Nm Finfets
Sige CMOS This Work 30
LETTER Doi:10.1038/Nature09749
Circuit-Level Design Impact on Variability and Soft Errors Robustness
9 IX September 2021
MOSFET Evolution
Analysis & Design of Radio Frequency Wireless Communication
Novel Devices to Overcome Planar Limits and Enable Novel Circuits
Performance Enhancement of Multigate Mosfet Using Engineering Technique-A Review
III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10Nm Technology and Beyond
SOI-Multi-Finfet: Impact of Fins Number Multiplicity on Corner Effect A.N
International Technology Roadmap for Semiconductors
Lecture 31: Devices and Integrated Circuit Formation
Design and Performance Analysis of 1-Bit Finfet Full Adder Cells for Subthreshold Region at 16 Nm Process Technology
Anqi Zhang Gengfeng Zheng Charles M. Lieber Building Blocks For
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Nano-Scaled Semiconductor Devices E
The New Generation of SOI Mosfets
Design of 13T SRAM Bitcell in 22Nm Technology Using Fin FET For
Design, Modeling and Analysis of Non-Classical Field Effect Transistors
Comparative Analysis of VLSI Circuits Using Multigate Devices
Urbana, Illinois Doctoral Committee
Circuit-Level Approaches to Mitigate the Process Variability and Soft Errors in Finfet Logic Cells Alexandra Lackmann Zimpeck
Analog Cochlea Filter Using FINFET