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Milton Feng
The Transistor Laser: a Radical, Revolutionary Device
ECE Illinois WINTER2005.Indd
CNST Annual Nanotechnology Workshop 2011 Npeap Workshop
Compound Semiconductor Materials and Processing Technologies for Photonic Devices and Photonics Integration
Creating a Better Sensor for DNA Analysis
Surfactants and Digital Alloys for Strain Relief in III-Nitride Distributed Bragg Reflectors and Related Heterostructures Via Metal Organic Vapor Phase Epitaxy
Development of High Speed Vertical Cavity Surface-Emitting Semiconductor Diode Laser and Transistor Laser by Michael E. Liu Diss
(12) United States Patent (10) Patent No.: US 8,179,937 B2 Walter Et Al
Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications
Light Emitting Transistor and Laser Revised.Indd
Tunneling Holds Key to High-Speed Modulation of Transistor and Laser Development 5 December 2016, by Rick Kubetz
Inalgaas/Inp Light Emitting Transistors and Transistor Lasers Operating Near 1.55 Μm Copyright © Yong Huang 2010
Micro and Nanotechnology Laboratory Newsletter Spring 2012
Hidden Structure Revealed in Characteristics of Transistor Laser 6 April 2006
Antimonide-Based Field-Effect Transistors and Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by Chi-Chih
(12) United States Patent (10) Patent No.: US 7,696.536 B1 Feng Et Al
Illinois Physicists Produce Two Most Important Scientific Papers 5 June 2006
Oxide-Confined Vcsels for High-Speed Optical Interconnects
Top View
(12) United States Patent (10) Patent No.: US 7,813,396 B2 Feng Et Al
Adesida Named College of Engineering Dean Electrical Engineer Named Provost
Direct and Photon-Assisted Tunneling in Resonant-Cavity Quantum-Well Light-Emitting Transistors
Oxide-Confined Vcsels for High-Speed Optical Interconnects