DOCSLIB.ORG

CNST Annual Nanotechnology Workshop 2011 Npeap Workshop

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
CNST Annual Nanotechnology Workshop 2011 Npeap Workshop CNST Annual Nanotechnology Workshop 2011 nPEAP Workshop May 12–13, 2011 Beckman Institute for Advanced Science and Technology and Micro and Nanotechnology Laboratory University of Illinois at Urbana-Champaign Sponsor Showcasing University of Illinois research in • University of Illinois bionanotechnology/nanomedicine, nanoelectronics/ Center for Nanoscale Science and Technology nanophotonics, and nanomaterials/nanomanufacturing, leading to cross-campus and industry collaborations. Co-sponsors • Micro and Nanotechnology Laboratory nPEAP • National Center for Supercomputing Applications The nano-Photonics and Electronics Industry Affiliates • Beckman Institute for Advanced Program focuses on cutting-edge nano-photonics and Science and Technology electronics research. • Coordinated Science Laboratory • Frederick Seitz Materials Research Laboratory • Institute for Genomic Biology • NSF I/UCRC Center for Agricultural, Biomedical, and Pharmaceutical Nanotechnology (CABPN) • NSF IGERT- CMMB • NIH/NCI M-CNTC • NSF Center on Emergent Behaviors For Technical Collaboration Contact: of Integrated Cellular Systems Center for Nanoscale Science and Technology (EBICS, co-location) University of Illinois • NanoHub at Illinois 217-333-2015 • Nanotechnology Community of Scholars at ACES [email protected] • US Army TATRC: Micro and Nano- www.cnst.illinois.edu mediated 3D Stereo Lithography 11:10 In-Situ TEM Investigations of Nanoscale Energy Systems in Relevant CNST Annual Environmental Conditions Shen Dillon, Materials Science and Nanotechnology Engineering 11:30 Nanoengineering of High Power and Workshop 2011 Energy Density Rechargeable Batteries Paul Braun, Materials Science and Venue: Beckman Institute for Advanced Engineering Science and Technology 11:50 Engineering New Functionalities in Materials: Complex Oxide Thin Films and Nanostructures for Next Thursday, May 12 Generation Devices Lane Martin, Materials Science and 7:30-8:15 AM Registration and Breakfast at Beckman Engineering Plenary Session at Beckman Auditorium 12:10 Lunch and Performance 8:30-10:00 AM Plenary Session Chair: Rashid Bashir, Beckman Atrium Director, Micro and Nanotechnology Lab Nanoelectronics, Nanomaterials, and 8:30 Center for Nanoscale Science and Nanomanufacturing Session B Technology 1:15-2:15 PM Session II Chair: Edmund Seebauer, 8:35 Welcome Remarks Professor and Head, Chemical and Robert Easter; Interim Vice President Biomolecular Engineering and Chancellor, University of Illinois 1:15 A perspective on Challenges in Ilesanmi Adesida, Dean, College of Nanoscale Manufacturing Engineering; Founding and Co-Director, Placid Ferreira, Mechanical Science and CNST, University of Illinois Engineering Herbert Whiteley, Dean, College of 1:35 3D Topological Insulator- Veterinary Medicine, University of Superconductor Heterostructures: Illinois From Wormholes to Vortices Matthew Gilbert, Electrical and nano@Illinois: Center for Nanoscale Computer Engineering Science and Technology (CNST) 1:55 Gas Detection using Sub-wavelength Rashid Bashir, Co-Director, CNST, Structures on Fiber Tips Director, MNTL and Lynford Goddard, Electrical and Irfan Ahmad, Executive Director, CNST Computer Engineering 9:00 Keynote 2:15 Coupled Electro-Thermal Simulation of Overview of IBM Watson Labs Semiconductor Devices Nanoscience and Nanotechnology Umberto Ravaioli, Electrical and Research Computer Engineering Thomas Theis, Program Manager, 2:35 Coffee Break New Devices and Architectures for Computing, IBM Bionanotechnology and Nanomedicine* 10:00 Coffee Break 3:00-4:45 PM Session III Chair: Gene Robinson, Professor and Director, Institute for Nanoelectronics, Nanomaterials, and Genomic Biology Nanomanufacturing Session A 3:00 Nanoscale Force Sensors for Biological 10:30-12:00 Session I Chair: David Cahill, Professor Applications and Head, Department of Materials Taher Saif, Mechanical Science and Science and Engineering Engineering 10:30 Novel Printing Approaches for 3:20 Silicon Photonics: An Enabling Microelectrode Architectures on Technology for Multiplexed Bioanalysis Flexible, Rigid, and Curvilinear Ryan Bailey, Chemistry Substrates 3:40 Nanotherapeutics for Cancer Jennifer Lewis, Materials Science and Treatment Engineering/FSMRL, Illinois JJ Cheng, Materials Science and 10:50 Modeling Graphene Nanoelectronics: Engineering History Repeats Itself Jean-Pierre Leburton, Electrical and Computer Engineering 2 4:00 Cell Transplantation Device for Neovascularization: Integration CNST Workshop Organizing Committee of Material Chemistry and Microfabrication Irfan Ahmad, Co-Chair, and Agricultural and Hyunjoon Kong, Chemical and Biological Engineering, CNST, MNTL Biomolecular Engineering Rashid Bashir, Co-Chair, and Electrical and Computer 4:20 Micro and Nano Printing for Engineering, MNTL, CNST understanding Cell-material Interactions Rohit Bhargava, Bioengineering Amy Wagoner-Johnson, Mechanical JJ Cheng, Materials Science and Engineering Science and Engineering Lizanne DeStefano, Educational Psychology 4:40 Microfluidic Platforms for Protein Crystallization and in situ Structure Timothy Fan, Veterinary Clinical Medicine Determination Paul Kenis, Chemical and Biomolecular Jean-Pierre Leburton, Electrical and Computer Engineering Engineering Yi Lu, Chemistry Session IV Joseph Lyding, Electrical and Computer Engineering 5:15-7:00 PM Poster Session* and Reception at Micro and Nanotechnology Laboratory Moderators: Lizanne DeStefano, Educational Psychology, and Irfan Ahmad, CNST/ABE, Illinois Workshop Premise 7:30 PM Dinner/Speech (by invitation) The broad objective of the University of Illinois Center TBA for Nanoscale Science and Technology (CNST) I-Hotel, University of Illinois Research workshop is to showcase University of Illinois research Park in bionanotechnology/ nanomedicine, nanoelectronics/ nanophotonics, nanomaterials/nanomanufacturing, and _____ computational nanotechnology/nanomechanics. *includes presentations by faculty and students affiliated The general framework of the nanotechnology workshop with the following multidisciplinary centers and projects: is similar to those held on campus since 2003; which were all well attended by industry and academia. Some of those • NSF IGERT (CMMB) Cellular and Molecular Mechanics interactions have since then led to industry and cross- and BioNanotechnology campus collaborations. The CNST-led forums and workshops • M-CNTC: Midwest Cancer Nanotechnology Training have contributed tremendously toward the formation of Center (NIH/NCI) multidisciplinary teams leading to the establishment of multi- million dollar new nanotechnology centers on-campus. • EBICS: Emerging Behaviors of Integrated Cellular Structures Center (NSF STC) The workshop will provide a forum for industry interactions and collaborations. The workshop brings together campus • US Army TATRC: Micro and Nano-mediated 3D Stereo community (faculty, postdocs, graduate and undergraduate Lithography students, administration) from the University of Illinois and industry engaged in cutting-edge research. A workshop panel will discuss the roadmap to future direction of research and development in nanotechnology and regional partnerships. Format: The two-day workshop is being held on May 12 and 13, 2011 in conjunction with nPEAP (Nano Photonics and Electronics Affiliates Program) workshop at the renowned Beckman Institute and the Micro and Nanotechnology Laboratory at the University of Illinois at Urbana-Champaign. The workshop programs includes plenary session speeches, technical and poster sessions, nPEAP roadmap discussions, and best student poster awards, in addition to networking opportunities during lunch and dinner receptions. Outreach efforts involve participation of high school students and radio interviews on nanotechnology at Illinois. Sponsors: University of Illinois Center for Nanoscale Science and Technology www.cnst.illinois.edu 3 Nanophotonics and Optoelectronics nPEAP 10:30-12:00 Session II: Chair: Shun- Lien Chuang, ECE/MNTL Nano Photonics and Electronics 10:30 Photonic Crystal VCSELs for Emerging Applications Industry Affiliates Program Kent Choquette, Abel Bliss Professor of Venue: Micro and Nanotechnology Electrical and Computer Engineering, MNTL Laboratory (MNTL) Seminar Room 1000 10:50 Nanolasers on Silicon Substrate: What is the Smallest Semiconductor Laser one can make? Friday, May 13 Shun Lien Chuang, Robert C. MacClinchie Distinguished Professor of 7:00-8:00 AM Continental Breakfast Electrical and Computer Engineering, Micro and Nanotechnology MNTL Laboratory Atrium 11:10 Recent Advances in Microcavity Nanoelectronics: High Speed Nanotransistor for Plasmas: Transistors, Coupled Arrays, Energy Efficient Electronics and Light Tiles for General Illumination J. Gary Eden, Gilmore Family Endowed 8:00-10:00 AM Session I: Chair: Milton Feng, ECE/ Professor of Electrical and Computer MNTL, nPEAP, Co-Chair Engineering 8:00 Welcome Remarks 11:30 Blue Waters and Beyond—Unsatisfiable Michael Bragg, Executive Associate Demand for Increased Bandwidth and Dean, College of Engineering, and Reduced Power Consumption Professor of Aerospace Engineering Wen-Mei Hwu, AMD Jerry Sanders Chair, Professor of Electrical and Andreas Cangellaris, Head, Department Computer Engineering, Coordinated of Electrical and Computer Engineering, Science Laboratory and M.E.Van Valkenburg Professor of Electrical and Computer Engineering 11:50 Coffee Break 8:15 Keynote Nanotechnology Emerging Device Nanotechnology Research for Future Computing and 12:00-1:20 PM Session III: Chair: Joseph Lyding,
Load more

Recommended publications
  • The Transistor Laser: a Radical, Revolutionary Device
    technology novel devices The transistor laser: a radical, revolutionary device There are tremendous differences between the laser and the transistor, but it is possible to draw their attributes together by building a transistor laser. This novel device that produces its electrical and optical outputs simultaneously promises to revolutionize data transfer, enabling new architectures capable of operating at incredibly high bit rates, says Milton Feng from the University of Illinois, Urbana-Champaign. 48 www.compoundsemiconductor.net November / December 2010 novel devices technology he semiconductor industry rakes in billions and Tdollars from the manufacture of devices invented way back in the middle of the twentieth century. With the benefit of hindsight it is clear that the most important of them all is the transistor, a device invented by John Bardeen and Walter Brattain in 1947, which has been the key building block in the development of microelectronics, integrated circuits, consumer electronics, and the computer industry. Not far behind the transistor is the visible LED, made for the first time by Nick Holonyak in 1962, and the laser diode, independently invented in that same year by Holonyak and Robert Hall. These two optoelectronic devices have provided a great foundation for revolutionizing display, lighting, and information technology. Although the performance of all these devices has come on in leaps and bounds over the intervening decades, none can simultaneously deliver an electrical signal and a laser output. The invention of such device had to wait until Fig. 1 Three-port operation of the transistor laser provides an electrical input 2004, when I, Milton Feng, in partnership with co-worker (port 1), an electrical output (port 2) and an optical laser output (port 3).
    [Show full text]
  • ECE Illinois WINTER2005.Indd
    Electrical and Computer Engineering Alumni News ECE Alumni Association newsletter University of Illinois at Urbana-Champaign Winter 2005-2006 Jack Kilby, 1923–2005 Volume XL Cancer claims Nobel laureate, ECE alumnus By Laura Schmitt and Jamie Hutchinson Inside this issue Microchip inventor and Nobel physics laureate DEPARTMENT HEAD’S Jack Kilby (BSEE ’47) died from cancer on MESSAGE June 22, 2005. He was 81. Kilby received the 2000 Nobel Prize in 2 Physics on December 10, 2001, in an award ceremony in Stockholm, Sweden. Kilby was ROOM-TEMPERATURE LASER recognized for his part in the invention and 4 development of the integrated circuit, which he first demonstrated on September 12, 1958, while at Texas Instruments. At the Nobel awards ceremony, Royal Swedish Academy member Tord Claesen called that date “one of the most important birth dates in the history of technology.” A measure of Kilby’s importance can be seen in the praise that was lavished on him in death. Lengthy obituaries appeared in engi- Jack Kilby neering and science trade publications as well FEATURED ALUMNI CAREERS as in major newspapers worldwide, including where his interest in electricity and electron- the New York Times, Financial Times, and The ics blossomed at an early age. His father ran a 29 Economist. On June 24, ABC News honored power company that served a wide area in rural Kilby by naming him its Person of the Week. Kansas, and he used amateur radio to keep in Reporter Elizabeth Vargas introduced the contact with customers during emergencies. segment by noting that Kilby’s invention During an ice storm, the teenage Kilby saw “had a direct effect on billions of people in the firsthand how electronic technology could world,” despite his relative anonymity among positively impact people’s lives.
    [Show full text]
  • Compound Semiconductor Materials and Processing Technologies for Photonic Devices and Photonics Integration
    Carl kth royal institute r of technology euterskiöld Hedlund euterskiöld Compound semiconductor materials and processing technologies for photonic devices and photonics integration photonics and devices photonic for technologies processing and materials semiconductor Compound Doctoral Thesis in Information and Communication Technology Compound semiconductor materials and processing technologies for photonic devices and photonics integration CARL REUTERSKIÖLD HEDLUND ISBN 978-91-7873-665-2 TRITA-EECS-AVL-2020:51 KTH2020 www.kth.se Stockholm, Sweden 2020 Compound semiconductor materials and processing technologies for photonic devices and photonics integration CARL REUTERSKIÖLD HEDLUND Academic Dissertation which, with due permission of the KTH Royal Institute of Technology, is submitted for public defence for the Degree of Doctor of Philosophy on Friday the 30h October 2020, at 10:00 a.m. in sal C, Electrum, KTH Doctoral Thesis in Information and Communication Technology KTH Royal Institute of Technology Stockholm, Sweden 2020 © Carl Reuterskiöld Hedlund ISBN 978-91-7873-665-2 TRITA-EECS-AVL-2020:51 Printed by: Universitetsservice US-AB, Sweden 2020 Contents Abstract …………………………………………………………6 Sammanfattning ……………………………………………….8 Acknowledgements ………………………………………….10 List of Publications ………………………………………….11 1 Introduction ……………………………………………….17 1.1 Part A: GaAs and InP- device growth and processing…...17 1.1.1 Transistor vertical surface emitting lasers …………………..17 1.1.2 Trench confined transistors for spatial light modulator driver electronics…………………………………....………….20
    [Show full text]
  • Creating a Better Sensor for DNA Analysis
    NEWS FOR ECE ILLINOIS ALUMNI AND FRIENDS WINTER 2009–2010 Creating a better sensor for DNA analysis Also in this issue: Goddard receives Presidential Early Career Award Scientists break light modulation speed record—twice ECE grad students develop portable AIDS diagnostic platform ECE alumnus Cho inducted into National Inventors Hall of Fame Department of Electrical and Computer Engineering Support excellence To alumni and friends of ECE ILLINOIS, Speaking at a special session on scientific philanthropy, held at the World Conference of Science Journalists in London last July, Mike Lazaridis, cofounder of Research in Motion, Ltd., the company behind the BlackBerry® and major sponsor of the Institute for Quantum Computing at the University of Waterloo, Canada, said, “Philanthropy can be seen as a kind of venture capital for really long-term investment.” This comment reminds us of the true value of academic philanthropy as a critical enabler of the free pursuit of the arts, scientific discovery, and engineering innovation. Philanthropy, which can be defined literally as “a love for mankind,” occurs through the generosity of those with a commitment to the future, people for whom satisfaction derives from the benefits to society at large. I can think of no other institution more deserving of sponsorship today than the land grant university, perhaps the foremost guardian of the free pursuit of knowledge expansion. In today’s challenging economic times, the uncertainty of state support forces land grant universities to become increasingly dependent on philanthropy to further pursuit of their mission. The characterization of the philanthropist as a catalyst for the betterment of humanity aligns with the wellspring of the land grant university’s success—a fundamental meritocracy, regard- ing not only the selection of the student body, but also regarding academic and artistic freedom.
    [Show full text]
  • Surfactants and Digital Alloys for Strain Relief in III-Nitride Distributed Bragg Reflectors and Related Heterostructures Via Metal Organic Vapor Phase Epitaxy
    Graduate Theses, Dissertations, and Problem Reports 2011 Surfactants and digital alloys for strain relief in III-nitride distributed Bragg reflectors and related heterostructures via metal organic vapor phase epitaxy Lee Ellen Rodak West Virginia University Follow this and additional works at: https://researchrepository.wvu.edu/etd Recommended Citation Rodak, Lee Ellen, "Surfactants and digital alloys for strain relief in III-nitride distributed Bragg reflectors and related heterostructures via metal organic vapor phase epitaxy" (2011). Graduate Theses, Dissertations, and Problem Reports. 4775. https://researchrepository.wvu.edu/etd/4775 This Dissertation is protected by copyright and/or related rights. It has been brought to you by the The Research Repository @ WVU with permission from the rights-holder(s). You are free to use this Dissertation in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you must obtain permission from the rights-holder(s) directly, unless additional rights are indicated by a Creative Commons license in the record and/ or on the work itself. This Dissertation has been accepted for inclusion in WVU Graduate Theses, Dissertations, and Problem Reports collection by an authorized administrator of The Research Repository @ WVU. For more information, please contact [email protected]. SURFACTANTS AND DIGITAL ALLOYS FOR STRAIN RELIEF IN III- NITRIDE DISTRIBUTED BRAGG REFLECTORS AND RELATED HETEROSTRUCTURES VIA METAL ORGANIC VAPOR PHASE EPITAXY
    [Show full text]
  • Development of High Speed Vertical Cavity Surface-Emitting Semiconductor Diode Laser and Transistor Laser by Michael E. Liu Diss
    DEVELOPMENT OF HIGH SPEED VERTICAL CAVITY SURFACE-EMITTING SEMICONDUCTOR DIODE LASER AND TRANSISTOR LASER BY MICHAEL E. LIU DISSERTATION Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering in the Graduate College of the University of Illinois at Urbana-Champaign, 2016 Urbana, Illinois Doctoral Committee: Professor Milton Feng, Chair Professor Jianming Jin Associate Professor John M. Dallesasse Assistant Professor Can Bayram ABSTRACT High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a high modulation bandwidth as well as single-mode operation; however, because of the small oxide aperture (< 3 µm), a microcavity VCSEL shows high resistance and low optical power. An 850 nm oxide-confined VCSEL with an aperture ~4 µm is able to show error- free transmission at 40 Gb/s. With an advanced DBR design for parasitic reduction as well as better thermal conduction and a short 0.5-λ cavity with five quantum wells, an 850 nm VCSEL is able to demonstrate 57 Gb/s error-free transmission at 25 °C and 50 Gb/s error- free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design.
    [Show full text]
  • (12) United States Patent (10) Patent No.: US 8,179,937 B2 Walter Et Al
    US008179937B2 (12) United States Patent (10) Patent No.: US 8,179,937 B2 Walter et al. (45) Date of Patent: May 15, 2012 (54) HIGH SPEED LIGHT EMITTING (56) References Cited SEMCONDUCTOR METHODS AND DEVICES U.S. PATENT DOCUMENTS (75) Inventors: Gabriel Walter, Champaign, IL (US); 4,176,367 A 1 1/1979 Uematsu . 357/19 Milton Feng, Champaign, IL (US); Nick (Continued) Holonyak, Jr., Urbana, IL (US); Han Wui Then, Hillsboro, OR (US); FOREIGN PATENT DOCUMENTS Chao-Hsin Wu, Champaign, IL (US) JP 61270885 12, 1986 (73) Assignees: Quantum Electro Opto Systems Sdn. OTHER PUBLICATIONS Bhd., Melaka (MY); The Board of Electrical-Optical Signal Mixing and Multiplication (2-> 22 GHz) Trustees of The University of Illinois, With a Tunnel Junction Transistor Laser, H.W. Then, C.H. Wu, G. Urbana, IL (US) Walter, M. Feng and N. Holonyak, Jr., Appl. Phys. Lett. 94, 10114 (*) Notice: Subject to any disclaimer, the term of this (2009). patent is extended or adjusted under 35 (Continued) U.S.C. 154(b) by 0 days. Primary Examiner — Tod T Van Roy (21) Appl. No.: 12/799,083 (74) Attorney, Agent, or Firm — Martin Novack (22) Filed: Apr. 16, 2010 (57) ABSTRACT (65) Prior Publication Data A method for producing a high frequency optical signal com ponent representative of a high frequency electrical input US 2010/027214.0 A1 Oct. 28, 2010 signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region Related U.S. Application Data of a first semiconductor type between semiconductor emitter (63) Continuation-in-part of application No.
    [Show full text]
  • Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications
    Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications MILTON FENG, FELLOW, IEEE, SHYH-CHIANG SHEN, MEMBER, IEEE, DAVID C. CARUTH, MEMBER, IEEE, AND JIAN-JANG HUANG, MEMBER, IEEE Invited Paper Next-generation high data rate wireless communication systems I. INTRODUCTION offer completely new ways to access information and services. To provide higher data speed and data bandwidth, RF transceivers The evolution of wireless networks involves enormous in next-generation communications are expected to offer higher complexity and rapid changes between different generations RF performance in both transmitting and receiving circuitry to as well as different applications. Take mobile commu- meet quality of service. Chosen semiconductor device technologies nications as an example. It is one of the fastest growing will depend greatly on the tradeoffs between manufacturing cost areas over the past decade. The first-generation mobile and circuit performance requirements as well as the variations in system architecture. Hardly did we find a single semiconductor communication systems are analog systems designed to device technology that offers a total solution to RF transceiver carry the voice traffic. The rapid growth in the number of building blocks in terms of system-on-a-chip integration. The subscribers and the proliferation of incompatible first-gener- choices of device technologies for each constituent component ation systems drove the evolution toward second-generation are then important and complicated issues. In this paper, we will (2G) cellular systems. Multiple access techniques such review the general performance requirement of key components for RF transceivers for next-generation wireless communications. as time division multiple access (TDMA), code division The state-of-the-art high-speed transistor technologies will be multiple access (CDMA), and global system for mobile presented to assess the capabilities and limitations of each tech- communications (GSM) are used in the 2G systems.
    [Show full text]
  • Light Emitting Transistor and Laser Revised.Indd
    Office of Technology Management UNIVERSITY OF ILLINOIS AT URBANA - CHAMPAIGN Light Emitting Transistor and Laser This invention is the world’s fi rst light emitting transistor. The HBLET extends the capabilities of light-emitting diodes and could make this transistor the fundamental element in electronics and optoelectronics. Photonics, optics & lasers Speed These transistors produce infrared light in phase with their base current, allowing it applications ts to attain a switching speed superior to light fi emitting diodes (LEDs). Electronics Controlled light emission Optoelectronics Light intensity can be controlled by varying the base current. Displays bene Simultaneous control of optical and electrical outputs The addition of a third port allows greater control. Tech No. TF04036 Utilizes base current U.S. Patent applications pending Once considered wasteful, the base current is used to create light. Investigators Milton Feng & Nick Holonyak www.ece.uiuc.edu Tech Manager Steven Wille Phone: 217.244.5956 Email: [email protected] For more information about the Offi ce of Technology Management please call us at 217.333.7862 or visit our website at: www.otm.uiuc.edu Copyright © 2005 - 2006 The Board of Trustees at the University of Illinois about the world’s fi rst light emitting transistor... In a bipolar device there are two kinds of injected These transistors are made with indium gallium carriers, negatively charged electrons and phosphide and gallium arsenide, unlike traditional positively charged holes. Some of these carriers, transistors which have been built from silicon and for example, a transistor, recombine rapidly, germanium. The recombination process in indium supported by a base current essential for normal gallium phosphide and gallium arsenide materials transistor function.
    [Show full text]
  • Tunneling Holds Key to High-Speed Modulation of Transistor and Laser Development 5 December 2016, by Rick Kubetz
    Tunneling holds key to high-speed modulation of transistor and laser development 5 December 2016, by Rick Kubetz and computer engineering at Illinois. "The three- terminal transistor replaced the fragile vacuum tube for fast reliable electrical signal switching and amplification, and has made possible a revolution in modern electronics, communications, and computer technologies." "We are especially grateful to John Bardeen for bringing transistor research to Urbana in 1951, and changing all of our lives world-wide with the new quantum-physics and solid state devices," stated Nick Holonyak Jr, Bardeen's first graduate student and current Bardeen Chair professor emeritus of electrical and computer engineering and Physics . In 2004, Feng and Holonyak realized the radiative recombination energy (light) at the base of an III-V Milton Feng and Nick Holonyak, Jr. invented the heterojunction bipolar transistor could be transistor laser in 2004 and continue develop the technology for energy-efficient high speed data transfer modulated to be a signal and a three-port device in optical and 5G wireless communications. Credit: that can harness the intricate physics between University of Illinois electrons and light. "The fastest way for current to switch in a semiconductor material is for the electrons to jump In 2004, electrical engineering pioneers Nick between bands in the material in a process called Holonyak, Jr. and Milton Feng at the University of tunneling," Feng stated. "Light photons help shuttle Illinois invented the transistor laser—a three-port the electrons across, a process called intra-cavity device that incorporated quantum-wells in the base photon-assisted tunneling, making the device much and an optical cavity—increasing its capacity to faster." transmit data one hundred-fold.
    [Show full text]
  • Inalgaas/Inp Light Emitting Transistors and Transistor Lasers Operating Near 1.55 Μm Copyright © Yong Huang 2010
    InAlGaAs/InP Light Emitting Transistors and Transistor Lasers Operating Near 1.55 µm A Dissertation Presented to The Academic Faculty by Yong Huang In Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the School of Electrical and Computer Engineering Georgia Institute of Technology December 2010 Copyright © Yong Huang 2010 InAlGaAs/InP Light Emitting Transistors and Transistor Lasers Operating Near 1.55 µm Approved by: Dr. Russell D. Dupuis, Advisor Dr. Jeffrey A. Davis School of Electrical and Computer School of Electrical and Computer Engineering Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Shyh-Chiang Shen Dr. Zhong Lin Wang School of Electrical and Computer School of Materials Science and Engineering Engineering Georgia Institute of Technology Georgia Institute of Technology Dr. Oliver Brand School of Electrical and Computer Engineering Georgia Institute of Technology Date Approved: October 29, 2010 To my parents, Changfang Zhou and Tonghua Huang; and my supportive and beloved wife, Naiyu Wang ACKNOWLEDGEMENTS I would like to express my sincere gratitude to those who have helped make this work and dissertation possible. First, I would like to thank my advisor, Professor Russell D. Dupuis, for his guidance and for giving me the opportunity to participate in various optoelectronics research areas that are very stimulating and challenging. His devotion for work and deep and broad knowledge on semiconductors and MOCVD inspired me very much. I would also like to thank Professors Shyh-Chiang Shen, Oliver Brand, Jeffrey A. Davis, and Zhong Lin Wang for serving on my committee. It is an honor to have such esteemed professors on my committee.
    [Show full text]
  • Micro and Nanotechnology Laboratory Newsletter Spring 2012
    ENgineering at illinois SPRINg 2012 Edition MNTL Volume V, NO. I tHE MICRO AND NANOtECHNOLOGY LABORAtORY NEWSLETTER NaNoPhotoNics + NaNoelectroNics + mems/Nems + BioNaNotechNology Director’s Message Dear Colleagues and Friends, MNTL is also home to a newly-funded NSF Industry/University Collaborative Research Center (I/UCRC) Center for Agricultural, Here is another edition of the newsletter highlighting Biomedical, and Pharmaceutical Nanotechnology. The center was the activities at the Micro and Nanotechnology established due to sustained leadership and hard work of colleagues Laboratory (MNTL) at University of Illinois. Profs. Brian Cunningham (PI), Irfan Ahmad, and several others. This center will further crystallize our industry linkages and ties at the There has been a steady increase in our activities intersection of nanotechnology and biotechnology. here at the MNTL and I sincerely wish to thank all the students, faculty, staff, and researchers for their hard work and dedication to MNTL is a campus resource in nanotechnology, providing cleanroom quality and excellence. This relentless pursuit for excellence and the laboratories, bionanotechnology laboratories, and office and lab space continued desire to make broad societal impact is what inspires me for faculty and graduate students. Check out the MNTL website at and keeps us all moving forward. I am also thrilled to see a diverse www.mntl.illinois.edu for a detailed look at our facility and resources. group of MNTL faculty engaged not only with graduate students and postdocs, but also mentoring undergraduate students. In addition, There is ongoing discussion on the future of nanotechnology, our staff has played a remarkable role over the last three years in especially as the National Nanotechnology Initiative (NNI) was reaching out to K-12 in helping to build the STEM pipeline.
    [Show full text]