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Oxide-Confined Vcsels for High-Speed Optical Interconnects

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Oxide-Confined Vcsels for High-Speed Optical Interconnects 1 Oxide-Confined VCSELs for High-Speed Optical Interconnects Milton Feng, Life Fellow, IEEE, Chao-Hsin Wu, Member, IEEE, and Nick Holonyak, Jr., Life Fellow, IEEE (Invited Paper) Abstract— The electrically pumped VCSEL was first demon- light sources apart from the edge-emitting lasers, provides strated with metal cavities by Iga (1979); however, the device an efficient data processing and transmission way inside data threshold current was too high. Distributed Bragg reflector centers owing to its low threshold current and power consump- (DBR) cavities proposed by Scifres and Burnham (1975) were adopted to improve the optical cavity loss. Yet, it was not practical tion, high modulation speed, small footprint, a near-circular use until the discovery of the native oxide of AlGaAs and the optical beam for coupling, high reliability, easy packaging insertion of quantum-wells to provide simultaneous current and and forming dense arrays, and inexpensive on-wafer testing. optical confinement in semiconductor laser by Holonyak and Today, the Oxide-Confined VCSELs employed quantum wells Dallesasse (1990). Late, the first “low threshold” Oxide-Confined (QWs) in the active region and oxide-confined apertures have VCSEL was realized by Deppe (1994) and opened the door of commercial application for a Gigabit energy-efficient optical revolutionized our daily life from data centers to 3D sensing links. Today, the Oxide-Confined VCSELs have advanced error- applications. QWs can effectively enhance the radiative recom- free data transmission (BER ≤ 10−12)to57Gb/sat25°Cand bination processes and oxide-confined apertures to further 50 Gb/s at 85 °C, and also demonstrated the pre-leveled 16- make VCSELs into practical use with small active volumes QAM OFDM data at 104 Gbit/s under back-to-back transmission and lower threshold currents. These two features are closely with the received EVM, SNR, and BER of 17.3%, 15.2 dB, and 3.8 × 10−3, respectively. related to the laser modulation bandwidth and transmission data rate. Index Terms — Optical interconnect, oxidation, semiconductor Due to the high-Q microcavity formed by DBRs and an laser, vertical-cavity surface-emitting lasers. oxide-confined aperture, a Purcell enhancement of electron- hole spontaneous lifetime can be achieved and readily deter- I. INTRODUCTION mined by microwave measurements [1, 2]. The optical mode volume of the microcavity can determine the laser mode HE oxide-confined vertical-cavity surface-emitting laser spacing and mode number, resulting in the effect on low (Oxide-Confined VCSEL) is considered to be an impor- T threshold, fast recombination lifetime, and high-speed mod- tant semiconductor device for short-range optical interconnect ulation of VCSELs [3]. The radiative recombination lifetime and high-performance computer due to the growing demand can be extracted and analyzed using microwave method to of faster access to large amounts of information. Nowadays, provide further insight into the design of layout and material traditional copper-based interconnects have been gradually toward large laser bandwidth and better signal integrity [4]. replaced by short-haul optical links based on 850 nm wave- The energy efficient transmission of 20 and 40 Gb/s eye length optical transceivers and multimode fibers to solve the diagrams using VCSELs with a bandwidth of 18.7 GHz was issues of power consumption, signal distortion, electromag- then demonstrated with an oxide-confined microcavity design netic interference, cross talk, and most importantly the band- [5]. An enhanced bandwidth of 22.6 GHz with low relative width requirement. The VCSEL, the unique semiconductor intensity noise (RIN) approaching to standard quantum limit Manuscript received December 31, 2017. The authors wish to acknowledge was reported in the microcavity VCSELs. The smaller optical the support from Dr. Michael Gerhold of the Army Research Office (ARO) dimension determined by oxide aperture exhibits lower RIN under Grant No. W911NF-17-1-0112. This work is supported in part by due to reduced carrier fluctuation and mode competition inside Dr. Kenneth C. Goretta, Air Force of Scientific Research (AFOSR) under Grant FA9550-15-1-0122. We acknowledge the generous sponsorship of this the laser cavity [6]. Later in 2014, a 40 Gb/s error free research project by Foxconn Interconnect Technology (FIT), a leading inter- transmission with 431 fJ/Bit was presented in the 4 µm oxide connect company led by UIUC’s distinguished alumni. This project was also aperture VCSELs [7]. The importance of careful control of partially by the National Science Foundation under grant 1640196, and the Nanoelectronics Research Corporation (NERC), a wholly-owned subsidiary of oxidation process and optical mode was emphasized in both the Semiconductor Research Corporation (SRC), through Electronic-Photonic 850 nm and 780 nm VCSELs [8]. With careful control of Integration Using the Transistor Laser for Energy-Efficient Computing, an oxidation process, 780 nm VCSELs can reach 13.5 Gb/s with SRC-NRI Nanoelectronics Research Initiative under Task ID 2697.001." C. H, Wu like to thank the support from Ministry of Science and Technology 0.97 pJ/Bit energy efficiency [9]. The effect of aperture size (MOST) of Taiwan under the Grants 106-2218-E-005-001; 106-2622-E-002- on the RIN and data rates was compared with 40 Gb/s under 023-CC2; 105-2628-E-002-007-MY3; 106-2923-E-002-006-MY3. back-to-back and 100 m OM4 fiber transmission up to 65 °C Milton Feng and Nick Holonyak, Jr., are with the Department of Electrical and Computer Engineering and Microelectronics and Nanotechnology Lab., operation in 2015 [10]. Several reports have also reported over University of Illinois, Urbana-Champaign, IL 61801 USA (phone: 217-333- 40 Gb/s error-free data transmission [11-15]. 8080; fax: e-mail: [email protected]). To further achieve 50 Gb/s operation, 0.5-λ cavity, 5 Chao-Hsin Wu is with the Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, and Graduate Institute of Electron- quantum-wells and oxidation aperture were employed in the ics Engineering, Taipei, 10617 Taiwan. (e-mail: [email protected]) VCSEL design [16-18]. In 2016, a 5 µm VCSEL with 28.2 Digital Object Identifier: 10.1109/JQE.2018.2817068 1558-1713 c 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications standards/publications/rights/index.html for more information. 2 GHz bandwidth and 50 Gb/s error-free transmission was n+np+ doped InSb with a polished surface and Ag-Au contact. achieved by optimization of laser series resistance [19]. Later Even though it was under pulsed operation at temperature of in 2016 we demonstrated 57 Gb/s error-free operation at 10 K, several advantages we are familiar with today were room temperature and 50 Gb/s operation up to 85 °C [20, already mentioned to such a structure, such as small beam 21]. The microwave extraction methods to determine radiative divergence, array formation, and large output powers. The first recombination lifetime and to model small-signal equivalent p-n junction-based electrically-pumped SEL was demonstrated circuit of VCSELs were performed. The extracted intrinsic by the Iga group from the Tokyo Institute of Technology in modulation bandwidth is 31.86 GHz and 26.19 GHz at room 1979 [34]. This work incorporated a 1.8 um InGaAsP active temperature and 85 °C, respectively [22]. The temperature region with metal as the reflective mirror to form a resonant sensitivity can be further alleviated in terms of optical output cavity. They demonstrated a threshold current density of 44 and threshold current change, resulting in an improvement of kA/cm2 under pulse current injection at 77 K. budget penalty for 50 Gb/s operation at 85 °C in 2017 [23]. To reduce the SEL threshold current, the reduction of active Recently, we have achieved error-free data transmission for a cavity volume and metal cavity loss are required. This means 100 meter multi-mode fiber (MMF) with a record data rate of the necessary reflectivity for each mirror of cavity must be 46 Gb/s at 25°C, 43 Gb/s at 75°C and 42 Gb/s at 85°C without very high (∼ 99.9 %). Another improvement is to shift the the use of signal processing such as equalizer or forward error material system to wider bandgap, such as AlGaAs/GaAs, to correction [24]. The record performance of 850 nm oxide- reduce the Auger recombination sufficiently to enable pulsed confined VCSELs shows the importance of optimizing lower injection room temperature operation, which was demonstrated threshold current and microcavity mode to minimize the modal in 1984 [35, 36]. For metal reflectors, such as thick Au films, dispersion in OM4 fiber. the reflectivity is limited to 98 % due to the high optical In this report, we begin with a review of the VCSEL’s absorption; thus they are not for practical uses. Dielectric history and the discovery of III-V oxidation for current and materials, such as semiconductors at photon energies below optical confinement in semiconductor lasers. These have then their bandgap, are more desirable due to a very low absorption led to the realization of ultralow threshold oxide-confined coefficient. In a multilayer structure (Bragg reflector) the VCSELs that have set the foundation of today’s energy- reflection from many interfaces may add in phase to produce a efficient optical interconnect. The pathway to high-speed large reflection over 99.99 % at a loss less than 1 cm−1. With VCSELs and their characteristics are summarized from the the combination of deposited dielectric and/or metal mirrors, effect of microcavity design to small-signal modeling and the continuous-wave and room-temperature operation of SEL parameters extraction. Oxide-confined VCSEL operated up to was achieved in 1989 [37-39].
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