Office of Technology Management UNIVERSITY OF ILLINOIS AT URBANA - CHAMPAIGN Light Emitting Transistor and Laser This invention is the world’s fi rst light emitting transistor. The HBLET extends the capabilities of light-emitting diodes and could make this transistor the fundamental element in electronics and optoelectronics. Photonics, optics & lasers Speed These transistors produce infrared light in phase with their base current, allowing it applications ts to attain a switching speed superior to light fi emitting diodes (LEDs). Electronics Controlled light emission Optoelectronics Light intensity can be controlled by varying the base current. Displays bene Simultaneous control of optical and electrical outputs The addition of a third port allows greater control. Tech No. TF04036 Utilizes base current U.S. Patent applications pending Once considered wasteful, the base current is used to create light. Investigators Milton Feng & Nick Holonyak www.ece.uiuc.edu Tech Manager Steven Wille Phone: 217.244.5956 Email:
[email protected] For more information about the Offi ce of Technology Management please call us at 217.333.7862 or visit our website at: www.otm.uiuc.edu Copyright © 2005 - 2006 The Board of Trustees at the University of Illinois about the world’s fi rst light emitting transistor... In a bipolar device there are two kinds of injected These transistors are made with indium gallium carriers, negatively charged electrons and phosphide and gallium arsenide, unlike traditional positively charged holes. Some of these carriers, transistors which have been built from silicon and for example, a transistor, recombine rapidly, germanium. The recombination process in indium supported by a base current essential for normal gallium phosphide and gallium arsenide materials transistor function.