Micro and Nanotechnology Laboratory Newsletter Spring 2012
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The Transistor Laser: a Radical, Revolutionary Device
technology novel devices The transistor laser: a radical, revolutionary device There are tremendous differences between the laser and the transistor, but it is possible to draw their attributes together by building a transistor laser. This novel device that produces its electrical and optical outputs simultaneously promises to revolutionize data transfer, enabling new architectures capable of operating at incredibly high bit rates, says Milton Feng from the University of Illinois, Urbana-Champaign. 48 www.compoundsemiconductor.net November / December 2010 novel devices technology he semiconductor industry rakes in billions and Tdollars from the manufacture of devices invented way back in the middle of the twentieth century. With the benefit of hindsight it is clear that the most important of them all is the transistor, a device invented by John Bardeen and Walter Brattain in 1947, which has been the key building block in the development of microelectronics, integrated circuits, consumer electronics, and the computer industry. Not far behind the transistor is the visible LED, made for the first time by Nick Holonyak in 1962, and the laser diode, independently invented in that same year by Holonyak and Robert Hall. These two optoelectronic devices have provided a great foundation for revolutionizing display, lighting, and information technology. Although the performance of all these devices has come on in leaps and bounds over the intervening decades, none can simultaneously deliver an electrical signal and a laser output. The invention of such device had to wait until Fig. 1 Three-port operation of the transistor laser provides an electrical input 2004, when I, Milton Feng, in partnership with co-worker (port 1), an electrical output (port 2) and an optical laser output (port 3). -
ECE Illinois WINTER2005.Indd
Electrical and Computer Engineering Alumni News ECE Alumni Association newsletter University of Illinois at Urbana-Champaign Winter 2005-2006 Jack Kilby, 1923–2005 Volume XL Cancer claims Nobel laureate, ECE alumnus By Laura Schmitt and Jamie Hutchinson Inside this issue Microchip inventor and Nobel physics laureate DEPARTMENT HEAD’S Jack Kilby (BSEE ’47) died from cancer on MESSAGE June 22, 2005. He was 81. Kilby received the 2000 Nobel Prize in 2 Physics on December 10, 2001, in an award ceremony in Stockholm, Sweden. Kilby was ROOM-TEMPERATURE LASER recognized for his part in the invention and 4 development of the integrated circuit, which he first demonstrated on September 12, 1958, while at Texas Instruments. At the Nobel awards ceremony, Royal Swedish Academy member Tord Claesen called that date “one of the most important birth dates in the history of technology.” A measure of Kilby’s importance can be seen in the praise that was lavished on him in death. Lengthy obituaries appeared in engi- Jack Kilby neering and science trade publications as well FEATURED ALUMNI CAREERS as in major newspapers worldwide, including where his interest in electricity and electron- the New York Times, Financial Times, and The ics blossomed at an early age. His father ran a 29 Economist. On June 24, ABC News honored power company that served a wide area in rural Kilby by naming him its Person of the Week. Kansas, and he used amateur radio to keep in Reporter Elizabeth Vargas introduced the contact with customers during emergencies. segment by noting that Kilby’s invention During an ice storm, the teenage Kilby saw “had a direct effect on billions of people in the firsthand how electronic technology could world,” despite his relative anonymity among positively impact people’s lives. -
THE 53Rd INTERNATIONAL CONFERENCE on ELECTRON, ION, and PHOTON BEAM TECHNOLOGY & NANOFABRICATION
THE 53rd INTERNATIONAL CONFERENCE on ELECTRON, ION, and PHOTON BEAM TECHNOLOGY & NANOFABRICATION Marco Island Marriott Resort, Golf Club and Spa Marco Island, Florida May 26 – May 29, 2009 Co-sponsored by: The American Vacuum Society in cooperation with: The Electron Devices Society of the Institute of Electrical and Electronic Engineers and The Optical Society of America Conference at a Glance Conference at a Glance CONFERENCE ORGANIZATION CONFERENCE CHAIR Stephen Chou, Princeton University PROGRAM CHAIR Elizabeth Dobisz, Hitachi Global Storage Technologies MEETING PLANNER Melissa Widerkehr, Widerkehr and Associates STEERING COMMITTEE R. Blakie, University of Canterbury A. Brodie, KLA-Tencor S. Brueck, University of New Mexico S. Chou, Princeton University E. Dobisz, Hitachi Global Storage Technologies M. Feldman, Louisiana State University C. Hanson, SPAWAR J.A. Liddle, NIST F. Schellenberg, Mentor Graphics G. Wallraff, IBM ADVISORY COMMITTEE Ilesanmi Adesida, Robert Bakish, Alec N. Broers, John H. Bruning, Franco Cerrina, Harold Craighead, K. Cummings, N. Economou, D. Ehrlich, R. Englestad, T. Everhart, M. Gesley, T. Groves, L. Harriott, M. Hatzakis, F. Hohn, R. Howard, E. Hu, J. Kelly, D. Kern, R. Kubena, R. Kunz, N. MacDonald, C. Marrian, S. Matsui, M. McCord, D. Meisburger, J. Melngailis, A. Neureuther, T. Novembre, J. Orloff, G. Owen, S. Pang, R.F. Pease, M. Peckerar, H. Pfeifer, J. Randall, D. Resnick, M. Schattenburg, H. Smith, L. Swanson, D. Tennant*, L. Thompson, G. Varnell, R. Viswanathan, A. Wagner, J. Wiesner, C. Wilkinson, A. Wilson, Shalom Wind, E. Wolfe *Financial Trustee COMMERCIAL SESSION Alan Brodie, KLA Tencor Rob Illic, Cornell University Reginald Farrow, New Jersey Institute of Technology Brian Whitehead, Raith PROGRAM COMMITTEE & SECTION HEADS Lithography E- Beam Optical Lithography A. -
CNST Annual Nanotechnology Workshop 2011 Npeap Workshop
CNST Annual Nanotechnology Workshop 2011 nPEAP Workshop May 12–13, 2011 Beckman Institute for Advanced Science and Technology and Micro and Nanotechnology Laboratory University of Illinois at Urbana-Champaign Sponsor Showcasing University of Illinois research in • University of Illinois bionanotechnology/nanomedicine, nanoelectronics/ Center for Nanoscale Science and Technology nanophotonics, and nanomaterials/nanomanufacturing, leading to cross-campus and industry collaborations. Co-sponsors • Micro and Nanotechnology Laboratory nPEAP • National Center for Supercomputing Applications The nano-Photonics and Electronics Industry Affiliates • Beckman Institute for Advanced Program focuses on cutting-edge nano-photonics and Science and Technology electronics research. • Coordinated Science Laboratory • Frederick Seitz Materials Research Laboratory • Institute for Genomic Biology • NSF I/UCRC Center for Agricultural, Biomedical, and Pharmaceutical Nanotechnology (CABPN) • NSF IGERT- CMMB • NIH/NCI M-CNTC • NSF Center on Emergent Behaviors For Technical Collaboration Contact: of Integrated Cellular Systems Center for Nanoscale Science and Technology (EBICS, co-location) University of Illinois • NanoHub at Illinois 217-333-2015 • Nanotechnology Community of Scholars at ACES [email protected] • US Army TATRC: Micro and Nano- www.cnst.illinois.edu mediated 3D Stereo Lithography 11:10 In-Situ TEM Investigations of Nanoscale Energy Systems in Relevant CNST Annual Environmental Conditions Shen Dillon, Materials Science and Nanotechnology -
Biographical Description for the Historymakers® Video Oral History with Ilesanmi Adesida
Biographical Description for The HistoryMakers® Video Oral History with Ilesanmi Adesida PERSON Adesida, Ilesanmi, 1949- Alternative Names: Ilesanmi Adesida; Life Dates: May 15, 1949- Place of Birth: Ifon, Nigeria Work: Champain, IL Occupations: Electrical Engineer Biographical Note Electrical Engineer Ilesanmi Adesida was born in 1949 in Ifon, Ondo, Nigeria. Adesida enrolled in the University of California, Berkeley and earned his B.S. degree in 1974; his M.S. degree in 1975; and, his Ph.D. degree in 1979. Adesida was awarded an IBM postdoctoral fellowship from 1979 to 1981. His research interests include nanofabrication processes and ultra-high-speed optoelectronics. Upon graduation, Adesida served as a research associate at the Cornell Nanofabrication Facility and associate at the Cornell Nanofabrication Facility and School of Electrical Engineering at Cornell University from 1979 to 1984. He then returned to Africa and accepted a position as the head of the electrical engineering department at Abubakar Tafawa Belewa University in Bauchi, Nigeria. In 1987, Adesida returned to the United States and worked at the University of Illinois, Urbana-Champaign (UIUC) as a professor of electrical and computer engineering. In 1994, he was appointed as a research professor for the Coordinated Science Laboratory and as a professor in the Beckman Institute of Advanced Science and Technology. Adesida went on to serve in numerous academic and research capacities at UIUC. He served as the associate director for education for the NSF Engineering Research Center for Compound Semiconductor Microelectronics from 1990 to 1997. In 2000, Adesida became the director of the Micro and Nanotechnology Laboratory and was appointed as a professor of materials science and engineering. -
Compound Semiconductor Materials and Processing Technologies for Photonic Devices and Photonics Integration
Carl kth royal institute r of technology euterskiöld Hedlund euterskiöld Compound semiconductor materials and processing technologies for photonic devices and photonics integration photonics and devices photonic for technologies processing and materials semiconductor Compound Doctoral Thesis in Information and Communication Technology Compound semiconductor materials and processing technologies for photonic devices and photonics integration CARL REUTERSKIÖLD HEDLUND ISBN 978-91-7873-665-2 TRITA-EECS-AVL-2020:51 KTH2020 www.kth.se Stockholm, Sweden 2020 Compound semiconductor materials and processing technologies for photonic devices and photonics integration CARL REUTERSKIÖLD HEDLUND Academic Dissertation which, with due permission of the KTH Royal Institute of Technology, is submitted for public defence for the Degree of Doctor of Philosophy on Friday the 30h October 2020, at 10:00 a.m. in sal C, Electrum, KTH Doctoral Thesis in Information and Communication Technology KTH Royal Institute of Technology Stockholm, Sweden 2020 © Carl Reuterskiöld Hedlund ISBN 978-91-7873-665-2 TRITA-EECS-AVL-2020:51 Printed by: Universitetsservice US-AB, Sweden 2020 Contents Abstract …………………………………………………………6 Sammanfattning ……………………………………………….8 Acknowledgements ………………………………………….10 List of Publications ………………………………………….11 1 Introduction ……………………………………………….17 1.1 Part A: GaAs and InP- device growth and processing…...17 1.1.1 Transistor vertical surface emitting lasers …………………..17 1.1.2 Trench confined transistors for spatial light modulator driver electronics…………………………………....………….20 -
Creating a Better Sensor for DNA Analysis
NEWS FOR ECE ILLINOIS ALUMNI AND FRIENDS WINTER 2009–2010 Creating a better sensor for DNA analysis Also in this issue: Goddard receives Presidential Early Career Award Scientists break light modulation speed record—twice ECE grad students develop portable AIDS diagnostic platform ECE alumnus Cho inducted into National Inventors Hall of Fame Department of Electrical and Computer Engineering Support excellence To alumni and friends of ECE ILLINOIS, Speaking at a special session on scientific philanthropy, held at the World Conference of Science Journalists in London last July, Mike Lazaridis, cofounder of Research in Motion, Ltd., the company behind the BlackBerry® and major sponsor of the Institute for Quantum Computing at the University of Waterloo, Canada, said, “Philanthropy can be seen as a kind of venture capital for really long-term investment.” This comment reminds us of the true value of academic philanthropy as a critical enabler of the free pursuit of the arts, scientific discovery, and engineering innovation. Philanthropy, which can be defined literally as “a love for mankind,” occurs through the generosity of those with a commitment to the future, people for whom satisfaction derives from the benefits to society at large. I can think of no other institution more deserving of sponsorship today than the land grant university, perhaps the foremost guardian of the free pursuit of knowledge expansion. In today’s challenging economic times, the uncertainty of state support forces land grant universities to become increasingly dependent on philanthropy to further pursuit of their mission. The characterization of the philanthropist as a catalyst for the betterment of humanity aligns with the wellspring of the land grant university’s success—a fundamental meritocracy, regard- ing not only the selection of the student body, but also regarding academic and artistic freedom. -
Surfactants and Digital Alloys for Strain Relief in III-Nitride Distributed Bragg Reflectors and Related Heterostructures Via Metal Organic Vapor Phase Epitaxy
Graduate Theses, Dissertations, and Problem Reports 2011 Surfactants and digital alloys for strain relief in III-nitride distributed Bragg reflectors and related heterostructures via metal organic vapor phase epitaxy Lee Ellen Rodak West Virginia University Follow this and additional works at: https://researchrepository.wvu.edu/etd Recommended Citation Rodak, Lee Ellen, "Surfactants and digital alloys for strain relief in III-nitride distributed Bragg reflectors and related heterostructures via metal organic vapor phase epitaxy" (2011). Graduate Theses, Dissertations, and Problem Reports. 4775. https://researchrepository.wvu.edu/etd/4775 This Dissertation is protected by copyright and/or related rights. It has been brought to you by the The Research Repository @ WVU with permission from the rights-holder(s). You are free to use this Dissertation in any way that is permitted by the copyright and related rights legislation that applies to your use. For other uses you must obtain permission from the rights-holder(s) directly, unless additional rights are indicated by a Creative Commons license in the record and/ or on the work itself. This Dissertation has been accepted for inclusion in WVU Graduate Theses, Dissertations, and Problem Reports collection by an authorized administrator of The Research Repository @ WVU. For more information, please contact [email protected]. SURFACTANTS AND DIGITAL ALLOYS FOR STRAIN RELIEF IN III- NITRIDE DISTRIBUTED BRAGG REFLECTORS AND RELATED HETEROSTRUCTURES VIA METAL ORGANIC VAPOR PHASE EPITAXY -
Development of High Speed Vertical Cavity Surface-Emitting Semiconductor Diode Laser and Transistor Laser by Michael E. Liu Diss
DEVELOPMENT OF HIGH SPEED VERTICAL CAVITY SURFACE-EMITTING SEMICONDUCTOR DIODE LASER AND TRANSISTOR LASER BY MICHAEL E. LIU DISSERTATION Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering in the Graduate College of the University of Illinois at Urbana-Champaign, 2016 Urbana, Illinois Doctoral Committee: Professor Milton Feng, Chair Professor Jianming Jin Associate Professor John M. Dallesasse Assistant Professor Can Bayram ABSTRACT High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the globe, faster optical transceivers are demanded. A microcavity vertical cavity surface-emitting laser (VCSEL) is able to show a high modulation bandwidth as well as single-mode operation; however, because of the small oxide aperture (< 3 µm), a microcavity VCSEL shows high resistance and low optical power. An 850 nm oxide-confined VCSEL with an aperture ~4 µm is able to show error- free transmission at 40 Gb/s. With an advanced DBR design for parasitic reduction as well as better thermal conduction and a short 0.5-λ cavity with five quantum wells, an 850 nm VCSEL is able to demonstrate 57 Gb/s error-free transmission at 25 °C and 50 Gb/s error- free transmission at 85 °C. The dynamic carrier profile in the base of a transistor laser makes it possible to have a shorter carrier lifetime than in a diode laser. The first oxide-confined vertical cavity transistor laser (VCTL) is realized with a trench oxidation process and a lateral-feeding base metal design. -
Biographical Description for the Historymakers® Video Oral History with Ilesanmi Adesida
Biographical Description for The HistoryMakers® Video Oral History with Ilesanmi Adesida PERSON Adesida, Ilesanmi , 1949- Alternative Names: Adesida, Ilesanmi , 1949- Life Dates: - Place of Birth: Ifon, Ondo State, Nigeria Residence: Occupations: Electrical Engineer Biographical Note Electrical engineer Ilesanmi Adesida was born in 1949 in Ifon, Ondo, Nigeria. He received his B.S., M.S., and Ph.D degrees in electrical engineering from the University of California at Berkeley in 1974, 1975, and 1979, respectively Adesida was awarded an IBM postdoctoral fellowship from 1979 to 1981. Upon graduation, Adesida served as a research associate in the Cornell Nanofabrication Facility and the School of Electrical Engineering at Cornell University in Ithaca, NY from 1979 to 1984. He then returned to Africa and accepted a position as the head of the electrical engineering department at Abubakar Tafawa Belewa University in Bauchi, Nigeria. In 1987, Adesida returned to the United States and worked at the University of Illinois, Urbana- Champaign as a professor of electrical and computer engineering. In 1994, he was appointed as a research professor for the Coordinated Science Laboratory and as a professor in the Beckman Institute of Advanced Science and Technology. Adesida went on to serve in numerous academic and research capacities at the University of Illinois, Urbana-Champaign. He became the director of the Micro and Nanotechnology Laboratory in 2000 and served there for five years. In 2001, he was appointed as the director of the Center for Nanoscale Science and Technology and as a professor of materials science and engineering at the University of Illinois, Urbana- Champaign From 1997 to 2002, he served as the IEEE Electron Device Society Distinguished Lecturer. -
Illinois-Tsinghua Nanotechnology Symposium
Illinois-Tsinghua Nanotechnology Symposium Jointly held with the CNST 12th Annual Nanotechnology Workshop April 16-17, 2014 University of Illinois at Urbana-Champaign SPONSORS • Center for Nanoscale Science and Technology, University of Illinois • Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, China • Micro and Nanotechnology Laboratory, University of Illinois ORGANIZING COMMITTEE UNIVERSITY OF ILLINOIS AT URBANA-CHAMPAIGN: Rashid Bashir, CNST/MNTL/Bioengineering /Electrical and Computer Engineering, Chair Jimmy Hsia, Mechanical Science and Engineering/MNTL/CNST, Co-Chair Irfan Ahmad, CNST/Agricultural and Biological Engineering, Co-Chair Brian Cunningham, MNTL/Bioengineering/ Electrical and Computer Engineering Xiuling Li, Electrical and Computer Engineering/MNTL John Rogers, Materials Science and Engineering/MRL Placid Ferreira, Mechanical Science and Engineering Carrie Kouadio, CNST TSINGHUA UNIVERSITY: Shoushan Fan, Director, Tsinghua-Foxconn Nanotechnology Research Center, Co-Chair Kaili Jiang, Physics, Tsinghua University Dongsheng Liu, Chemistry, Tsinghua University ILLINOIS-TSINGHUA NANOTECHNOLOGY SYMPOSIUM 2014 ABOUT THE TSINGHUA-FOXCONN NANOTECHNOLOGY RESEARCH CENTER Tsinghua-Foxconn Nanotechnology Research Center is a cooperation with Foxconn Group, working toward the establishment of an international advanced nanotechnology research base, leveraging Tsinghua University’s sciences and talents and Foxconn Group’s industrialization. Located at Tsinghua University in Beijing, China, the Center conducts research -
Societal Implications — Maximizing Benefit for Humanity
About the Nanoscale Science, Engineering, and Technology Subcommittee The Nanoscale Science, Engineering, and Technology (NSET) Subcommittee is the interagency body responsible for coordinating, planning, implementing, and reviewing the National Nanotechnology Initiative (NNI). As the active interagency coordinating body, the NSET Subcommittee establishes the goals and priorities for the NNI and develops plans, including appropriate interagency activities, aimed at achieving those goals. The Subcommittee also promotes a balanced investment across all of the agencies, so as to address all of the critical elements that will support the development and utilization of nanotechnology. The National Nanotechnology Coordination Office (NNCO) provides technical and administrative support to the NSET Subcommittee and supports the subcommittee in the preparation of multi-agency planning, budget, and assessment documents, including this report. For more information on NSET, see http://www.nano.gov/html/about/nsetmembers.html. For more information on NNI and NNCO, see http://www.nano.gov. About this document This document is the report of a workshop held under the auspices of the National Science Foundation and the NSET Subcommittee on December 3-5, 2003, at the National Science Foundation in Arlington, VA. The primary purpose of the workshop was to examine trends and opportunities in nanoscience and nanotechnology toward maximizing benefit to humanity, and also potential risks in nanotechnology development. Cover and book design Cover design by Affordable Creative Services, Inc. and Kathy Tresnak of Koncept, Inc. Front cover image: Protein-templated assembly, Andrew McMillan, NASA Ames Research Center (ARC). The Protein Nanotechnology Group at ARC works at the intersection of biology, nanoscience, and information technology.