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(12) United States Patent (10) Patent No.: US 7,813,396 B2 Feng Et Al

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(12) United States Patent (10) Patent No.: US 7,813,396 B2 Feng Et Al USOO781.3396 B2 (12) United States Patent (10) Patent No.: US 7,813,396 B2 Feng et al. (45) Date of Patent: Oct. 12, 2010 (54) TRANSISTOR LASER DEVICES AND 5,892,784. A 4/1999 Tan et al. ...................... 372.43 METHODS 6,526,082 B 1 2/2003 Corzine et al. ........... 372/46.01 7,091,082 B2 8/2006 Feng et al. .................. 438,235 (75) Inventors: Milton Feng, Champaign, IL (US); Nick 7,244.997 B2 7/2007 Appelbaum et al. ......... 257/425 Holonyak, Jr., Urbana, IL (US); Gabriel 7.286,583 B2 10/2007 Feng et al. .................... 372.30 Walter, Champaign, IL (US); HanWui 7.354,780 B2 4/2008 Feng et al. .................... 438/20 Then, Urbana, IL (US) s 7,535,034 B2 * 5/2009 Walter et al. ................ 257/197 (73) Assignee: The Board of Trustees of the (Continued) University of Illinois, Urbana, IL (US) FOREIGN PATENT DOCUMENTS (*) Notice: Subject to any disclaimer, the term of this JP 09-074246 3, 1997 patent is extended or adjusted under 35 (21) Appl. No.: 12/384,772 OTHER PUBLICATIONS (22) Filed: Apr. 8, 2009 Ryzhil, Heterostructure laser transistors controlled by resonant tunneling electron extraction.” Semicond. Sci. Technol., vol. 12, pp. (65) Prior Publication Data 431-438, (1997).* US 2010/0085995 A1 Apr. 8, 2010 (Continued) O O Primary Examiner Minsun Harvey Related U.S. Application Data Assistant Examiner Michael Carter (63) Continuation-in-part of application No. 12/287,697. (74) Attorney, Agent, or Firm—Martin Novack filed on Oct. 10, 2008. 57 ABSTRACT (60) Provisional application No. 60/998,645, filed on Oct. (57) filed12, 2007on SSisional appl1cauonlication No.No 61/206.324s-1 is A method for producing light- 0 emission from a semiconductor • 1-1 s device includes the following steps: providing a semiconduc (51) Int. Cl. tor base region disposed between a semiconductor emitter HOIS 5/34 (2006.01) region and a semiconductor collector region that forms a HOIS 5/062 (2006.01) tunnel junction adjacent the base region; providing, in the (52) U.S. Cl 372/43.01372/44.O1 base region, a region exhibiting quantum size effects; provid ir grgr. e V-3 ing an emitter terminal, a base terminal, and a collector ter (58) Field of Classification Search .............. 29. minal respectively coupled with the emitter region, the base See application file for complete search histo region, and the collector region; and applying electrical sig pp p ry. nals with respect to the emitter terminal, the base terminal and (56) References Cited the collector terminal to produce light emission from the base region. U.S. PATENT DOCUMENTS 5,550,854 A 8, 1996 Chen et al. ............... 372/45.01 22 Claims, 8 Drawing Sheets US 7,813,396 B2 Page 2 U.S. PATENT DOCUMENTS Signal Mixing In A Multiple Input Transistor Laser Near Threshold, M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. 2001/0050934 Al 12/2001 Choquette et al. ............. 372/43 Phys. Lett. 88,063509 (2006). 2002fOO37022 A1 3/2002 Fukagai ......... ... 372/46 Collector Current Map Of Gain And Stimulated Recombination On 2002/0131464 A1 9, 2002 Sirbu et al. .. ... 372/45 The Base Quantum Well Transitions Of A Transistor Laser, R. Chan, 2005, OO40432 A1 2/2005 Feng et al. ..... ... 257,198 N. Holonyak, Jr., A. James and G. Walter; Appl. Phys. Lett 88, 2005.0054172 A1 3/2005 Feng et al. ..... ... 438/313 143508 (2006). 2008/0240173 Al 10/2008 Holonyak et al. .............. 372/9 Collector Breakdown. In The Heterojunction Bipolar Transistor Laser, G. Walter, A. James, N. Holonyak, Jr., M. Feng, and R. Chan FOREIGN PATENT DOCUMENTS Appl. Phys. Lett. 88, 232105 (2006). High-speed (/splges 1 GHz) Electrical And Optical Adding, Mixing, WO WO97,20353 6, 1997 And Processing Of Square-Wave Signals With A Transistor Laser, WO WO99/O5726 2, 1999 Milton Feng. N. Holonyak, Jr.; R. Chan; A. James; and G. Walter; WO WO2005/020287 3, 2005 Photonics Technology Letters, IEEE vol. 18 Issue: 11; Jun. 2006 pp. WO WO2006/093883 9, 2006 1240-1242. Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting OTHER PUBLICATIONS Transistors, B. F. Chu-Kung et al., Appl. Phys. Lett. 89, 082108 (2006). Light-Emitting Transistor: Light Emission From InGaP/GaAs Carrier LifeTime and Modulation Bandwidth Of A Quantum Well Heterojunction Bipolar Transistors, M. Feng, N. Holonyak, Jr., and AIGaAs/InGaP/GaAs/InGaAs Transistor Laser, M. Feng, N. W. Hafez, Appl. Phys. Lett. 84, 151 (2004). Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan; Appl. Quantum-Well-Base Heterojunction Bipolar Light-Emitting Tran Phys. Lett. 89, 113504 (2006). sistor, M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 84. Chirp In A Transitor Laser: Franz-Keldysh Reduction Of The 1952 (2004). Linewidth Enhancement, G. Walter, A. James, N. Holonyak, Jr., and Type-II GaAsSb. InPHeterojunction Bipolar Light-Emitting Transis M. Feng. Appl. Phys. Lett. 90,091 109 (207). tor, M. Feng, N. Holonyak, Jr., B. Chu-Kung, G. Walter, and R. Chan, Photon-Assisted Breadkdown, Negative Resistance, And Switching Appl. Phys. Lett. 84,4792 (2004). In A Quantum-Well Transistor Laser; A. James, G. Walter, M. Feng, Laser Operation Of A Heterojunction Bipolar Light-Emitting Tran and N. Holonyak, Jr., Appl. Phys. Lett. 90, 152109 (2007). sistor, G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Franz-Keldysh Photon-Assisted Voltage-Operated Switching Of A Lett. 85,4768 (2004). Transistor Laser; James, A.; Holonyak, N. Feng, M.; Walter, G., Microwave Operation And Modulation Of A Transistor Laser, R. Photonics Technology Letters, IEEE Volumn; 19 issue:9 May 1, Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. 86. 2007, pp. 680-682. 1311 14 (2005). Experimental Determination Of The EffectiveMinority Carrier Life Room Temperature Continuous Wave Operation Of A Heterojunc time In The Operation Of A Quantum-Well n-p-n. Heterojunction tion Bipolar Transistor Laser, M. Feng, N. Holonyak, Jr., G. Walter, Biopolar Light-Emigging Transistor Of Varying Base Quantum-Well and R. Chan, Appl. Phys. Lett. 87, 131103 (2005). Design And doping; H.W. Then, M. Feng, N. Holonyak, Jr., and Visible Spectrum Light-Emitting Transistors, F. Dixon, R. Chan, G. C.H.Wu, Appl. Phys. Lett. 91, 033505 (2007). Walter, N. Holonyak, Jr., M. Feng, X. B. Zhang, J. H. Ryou, and R. D. Charge Control Analysis. Of Transistor Laser Operation; M. Feng, N. Dupuis, Appl. Phys. Lett. 88, 012108 (2006). Holonyak, Jr., H.W. Then, and G. Walter; Appl. Phys. 91, 053501 The Transistor Laser, N. Holonyak, MFeng, Spectrum, IEEEvol.43, (2007). Issue 2, Feb. 2006. * cited by examiner U.S. Patent Oct. 12, 2010 Sheet 1 of 8 US 7,813,396 B2 Moteriol ond Thickness Dopont Concentration C m 3 0.05 um, n-In 1900.05P 0.10 urn, int-GoAs S 5E-18 Upper Cladding Loyers 110. Emmitter Loyer 0.02 urn, pt-GOAS C 5E-18 120, 0.01 urn, pt-GOAS C 5E-18 Bose 0.01 pm, pt-GOA C 5E-18 0.05 pm, pt-GCAS C 1E-19 125 QW-Bose region 12O \ Bose 121 135 0.01 plm, pt-A01000090AS C 6E-19 13O Tunnel Junction 0.04 pm, int-GaAs Si 7E-8 0.05 p.m., n-Alo4060060AS S SE-18 Bottom Clodding 0.40 p.m, int-A695Co005As S SE- 18 Loyers 0.025 p.m., n-A8000020As St 3E-18 0.05 plm, n -A 40GGO 50AS S SE-18 0.012 um, n-Inga 5P 5E-17 0.50 m, int-GaAs S. 5E-18 0.04 p.m, i-In 496.005P 0.50 am, i-GOAS SI-GOAS Substrate FIG. 1 U.S. Patent Oct. 12, 2010 Sheet 2 of 8 US 7,813,396 B2 In015GooB5As QW 30 Collector I-V Chorocteristics, 20 C (a) Tunnel Junction Tl AIB =4 mA g 2O "Knee" s IIH =56mA 10 0. 2.0 U.S. Patent Oct. 12, 2010 Sheet 3 of 8 US 7,813,396 B2 2 LI-V, AIB =4 mA, 20°C -(a) TJ Tronsistor Loser -(b) I-V of Comparison TL O, 6 0, 4. Photons 131 outside the I I I Photons Cf fkT t inside the Weak collector junction field waveguide Weak collector junction field in the presence of an optical field R.C.: QW Recombination Center Available empty states to accept a tunneling electron FIG. 5 U.S. Patent Oct. 12, 2010 Sheet 4 of 8 US 7,813,396 B2 -5F---------------Sase-- -10- . a - as a ...No. : –20-(a) Current Modulation-...- fR ...f3dB Frequency (GHz) FIG. 6 In05GooB5As QW El - lz- hWOW U.S. Patent Oct. 12, 2010 Sheet 5 of 8 US 7,813,396 B2 1S O Tunnel Junction Transistor Loser, 20C g O 1. (a) Lineority Characteristics, IB-80 mA -30 NM3-20) TN 5 9.5 -40 Fundomental Tones: fi f2 S E e -90 2f -f2 f f2 22-f & -60 3rd Order IMD: 2f1-f2, 2t2-f es Modulation Frequency t 5 O (D) VCE=0.8V -80 s 0.5 0.6 0.9 2 y -30 VCE(V) S. g E. Y d S e-soO "EvenOO fier."elec S JS S S-30 S. f=2.39 GHz 8 -60 -60 f2-f=1 MHz s O 0.2 0.4 0.6 0.8 1.0 -90 2f1-f2 f1 f2 22-f DC Optical Output per Focet (mW) Modulation Frequency FIG. 8 U.S. Patent Oct. 12, 2010 Sheet 6 of 8 US 7,813,396 B2 (a) Common-Emitter (b) Common-Base T-TL TJ-TL U.S.
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