Arxiv:1810.03726V2 [Cond-Mat.Mes-Hall] 8 Jan 2019
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(12) United States Patent (10) Patent No.: US 8,333,879 B2 M00re Et Al
US0083.33879B2 (12) United States Patent (10) Patent No.: US 8,333,879 B2 M00re et al. (45) Date of Patent: Dec. 18, 2012 (54) ELECTRODEPOSITION OF DELECTRIC (56) References Cited COATINGS ON SEMCONDUCTIVE SUBSTRATES U.S. PATENT DOCUMENTS 3,455,806 A 7/1969 Spoor et al. (75) Inventors: Kelly L. Moore, Dunbar, PA (US); 3,663,389 A 5, 1972 Koral et al. Michael J. Pawlik, Glenshaw, PA (US); 3,749,657 A 7, 1973 Le Bras et al. Michael G. Sandala, Pittsburgh, PA 3,793,278 A 2f1974 De Bona (US); Craig A. Wilson, Allison Park, PA 3,928, 157 A 12/1975 Suematsu et al. 3,947.338 A 3, 1976 Jerabek et al. (US) 3,947,339 A 3, 1976 Jerabek et al. 3,962,165 A 6, 1976 Bosso et al. (73) Assignee: PPG Industries Ohio, Inc., Cleveland, 3,975,346 A 8, 1976 Bosso et al. OH (US) 3,984,299 A 10, 1976 Jerabek (*) Notice: Subject to any disclaimer, the term of this (Continued) patent is extended or adjusted under 35 FOREIGN PATENT DOCUMENTS U.S.C. 154(b) by 0 days. EP OO12463 A1 6, 1980 (21) Appl. No.: 13/240,455 OTHER PUBLICATIONS (22) Filed: Sep. 22, 2011 Kohler, E. P. "An Apparatus for Determining Both the Quantity of Gas Evolved and the Amount of Reagent Consumed in Reactions (65) Prior Publication Data with Methyl Magnesium Iodide'. J. Am. Chem. Soc., 1927, 49 (12), US 2012/OOO6683 A1 Jan. 12, 2012 3181-3188, American Chemical Society, Washington, D.C. Related U.S. -
Safety Data Sheet
SAFETY DATA SHEET Revision Date 29-Jun-2018 Revision Number 1 SECTION 1: IDENTIFICATION OF THE SUBSTANCE/MIXTURE AND OF THE COMPANY/UNDERTAKING 1.1. Product identification Product Description: Cadmium arsenide Cat No. : 22773 CAS-No 12006-15-4 Molecular Formula As2 Cd3 1.2. Relevant identified uses of the substance or mixture and uses advised against Recommended Use Laboratory chemicals. Uses advised against No Information available 1.3. Details of the supplier of the safety data sheet Company Alfa Aesar . Avocado Research Chemicals, Ltd. Shore Road Port of Heysham Industrial Park Heysham, Lancashire LA3 2XY United Kingdom Office Tel: +44 (0) 1524 850506 Office Fax: +44 (0) 1524 850608 E-mail address [email protected] www.alfa.com Product Safety Department 1.4. Emergency telephone number Call Carechem 24 at +44 (0) 1865 407333 (English only); +44 (0) 1235 239670 (Multi-language) SECTION 2: HAZARDS IDENTIFICATION 2.1. Classification of the substance or mixture CLP Classification - Regulation (EC) No 1272/2008 Physical hazards Based on available data, the classification criteria are not met Health hazards Acute oral toxicity Category 3 (H301) Acute Inhalation Toxicity - Dusts and Mists Category 2 (H330) Environmental hazards ______________________________________________________________________________________________ ALFAA22773 Page 1 / 10 SAFETY DATA SHEET Cadmium arsenide Revision Date 29-Jun-2018 ______________________________________________________________________________________________ Acute aquatic toxicity Category 1 (H400) Chronic -
March 8, 1966 F. H. DIL, JR 3,239,393 METHOD for PRODUCING SEMICONDUCTOR ARTICLES Filed Dec
March 8, 1966 F. H. DIL, JR 3,239,393 METHOD FOR PRODUCING SEMICONDUCTOR ARTICLES Filed Dec. 31, 1962 2. Sheets-Sheet FG. MATER ALS STEPS SEMCONDUCTOR COMPOUND CRYSTAL POLISH CHEMICAL POLISH ACCEPTOR DFFUSANT SOURCE INTRODUCE COMPOUND MEASURED CHARGE HAVING AN ON OF DFFUSANT FROM SAME PERODC COMPOUND GROUP AS CRYSTAL ANION EVACUATE HEAT TO VAPOR DIFFUSE FOR MEASURED TIME ATTACH ELECTRODES INVENTOR. FREDERICK H. DLL JR ATTORNEY March 8, 1966 F., H., DL, JR 3,239,393 METHOD FOR PRODUCING SEMCONDUCTOR ARTICLES Filed Dec. 31, 962 2. Sheets-Sheet 2 Šes is series NNNNN r N NNNNNNNN 3,239,393 United States Patent Office Patented Mar. 8, 1966 2. to produce precisely the desired results. For instance, 3,239,393 when metallic zinc is used as the diffusant material for METHOD FOR PRODUCING SEMCONDUCTOR a gallium arsenide substrate, it is very difficult to obtain ARTICLES the pure zinc metal with no zinc oxide film upon the metal. Frederick H. Dii, Jr., Patnam Waley, N.Y., assigor to 5 Furthermore, the metal is so tough that it is difficult to International Business Machines Corporation, New divide a pure metal sample into smaller pieces in order York, N.Y., a corporation of New York to obtain exactly the correct quantity for the diffusion Filed Dec. 31, 1962, Ser. No. 248,679 process. The zinc oxide on the surface of the metallic Zinc 7 Claims. (C. 48-189) diffusant material is very undesirable for a number of This invention relates to an improved diffusion process IO reasons. The oxygen is not wanted in the diffusion Vapor, for the production of Semiconductor devices, and more and the zinc oxide tends to form a protective coating particularly to an improved vapor diffusion process in over the zinc which inhibits the formation of the desired which the introduction of unwanted impurities is very zinc metal vapor which is required for the diffusion proc effectively and simply avoided, and which possesses other CSS. -
Organometallic Pnictogen Chemistry
Institut für Anorganische Chemie 2014 Fakultät für Chemie und Pharmazie | Sabine Reisinger aus Regensburg, geb. Scheuermayer am 15.07.1983 Studium: Chemie, Universität Regensburg Abschluss: Diplom Promotion: Prof. Dr. Manfred Scheer, Institut für Anorganische Chemie Sabine Reisinger Die vorliegende Arbeit enthält drei Kapitel zu unterschiedlichen Aspekten der metallorganischen Phosphor- und Arsen-Chemie. Zunächst werden Beiträge zur supramolekularen Chemie mit 5 Pn-Ligandkomplexen basierend auf [Cp*Fe(η -P5)] und 5 i [Cp*Fe(η - Pr3C3P2)] gezeigt, gefolgt von der Eisen-vermittelten Organometallic Pnictogen Aktivierung von P4, die zu einer selektiven C–P-Bindungsknüpfung führt, während das dritte Kapitel die Verwendung von Phosphor Chemistry – Three Aspects und Arsen als Donoratome in mehrkernigen Komplexen mit paramagnetischen Metallionen behandelt. Sabine Reisinger 2014 Alumniverein Chemie der Universität Regensburg E.V. [email protected] http://www.alumnichemie-uniregensburg.de Aspects Three – Chemistry Pnictogen Organometallic Fakultät für Chemie und Pharmazie ISBN 978-3-86845-118-4 Universität Regensburg Universitätsstraße 31 93053 Regensburg www.uni-regensburg.de 9 783868 451184 4 Sabine Reisinger Organometallic Pnictogen Chemistry – Three Aspects Organometallic Pnictogen Chemistry – Three Aspects Dissertation zur Erlangung des Doktorgrades der Naturwissenschaften (Dr. rer. nat.) der Fakultät für Chemie und Pharmazie der Universität Regensburg vorgelegt von Sabine Reisinger, geb. Scheuermayer Regensburg 2014 Die Arbeit wurde von Prof. Dr. Manfred Scheer angeleitet. Das Promotionsgesuch wurde am 20.06.2014 eingereicht. Das Kolloquium fand am 11.07.2014 statt. Prüfungsausschuss: Vorsitzender: Prof. Dr. Helmut Motschmann 1. Gutachter: Prof. Dr. Manfred Scheer 2. Gutachter: Prof. Dr. Henri Brunner weiterer Prüfer: Prof. Dr. Bernhard Dick Dissertationsreihe der Fakultät für Chemie und Pharmazie der Universität Regensburg, Band 4 Herausgegeben vom Alumniverein Chemie der Universität Regensburg e.V. -
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (Opgaas)
LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Dissertation Submitted to The School of Engineering of the UNIVERSITY OF DAYTON In Partial Fulfillment of the Requirements for The Degree of Doctor of Philosophy in Electrical and Computer Engineering By Izaak Vincent Kemp Dayton, Ohio December 2012 LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent APPROVED BY: Dr. Andrew Sarangan Dr. Peter Powers Advisory Committee Chairman Committee Member Professor Professor Electrical and Computer Engineering Department of Physics Dr. Partha Banerjee Dr. Guru Subramanyam Committee Member Committee Member Professor Department Chair Electrical and Computer Engineering Electrical and Computer Engineering Dr. Rita Peterson Dr. Kenneth Schepler Committee Member Committee Member Adjunct Professor Adjunct Professor Electro-Optics Electro-Optics John G. Weber, Ph.D. Tony E. Saliba, Ph.D. Associate Dean Dean, School of Engineering School of Engineering &Wilke Distinguished Professor ii © Copyright by Izaak Vincent Kemp All rights reserved 2012 iii Distribution Statement A: Approved for public release, distribution is unlimited. This dissertation contains information regarding currently ongoing U.S. Department of Defense (DoD) research that has been approved for public release. Distribution of this dissertation is unlimited pursuant to DoD Directive 5230.24 subsection A4. Requests for further information may be referred to the author, Izaak V. Kemp AFRL/RYMWA. iv ABSTRACT LOW LOSS ORIENTATION-PATTERNED GALLIUM ARSENIDE (OPGaAs) WAVEGUIDES FOR NONLINEAR INFRARED FREQUENCY CONVERSION Name: Kemp, Izaak Vincent University of Dayton Advisor: Dr. Andrew Sarangan The mid-IR frequency band (λ = 2-5 μm) contains several atmospheric transmission windows making it a region of interest for a variety of medical, scientific, commercial, and military applications. -
Chemical Names and CAS Numbers Final
Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride -
Download Article (PDF)
Z. Kristallogr. 226 (2011) 435–446 / DOI 10.1524/zkri.2011.1363 435 # by Oldenbourg Wissenschaftsverlag, Mu¨nchen Structural chemistry of superconducting pnictides and pnictide oxides with layered structures Dirk JohrendtI, Hideo HosonoII, Rolf-Dieter HoffmannIII and Rainer Po¨ttgen*, III I Department Chemie und Biochemie, Ludwig-Maximilians-Universita¨t Mu¨nchen, Butenandtstraße 5–13 (Haus D), 81377 Mu¨nchen, Germany II Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan III Institut fu¨r Anorganische und Analytische Chemie, Universita¨t Mu¨nster, Corrensstraße 30, 48149 Mu¨nster, Germany Received October 29, 2010; accepted February 6, 2011 Pnictide / Pnictide oxide / Superconductivity / for hydride formation of CeRuSi ! CeRuSiH [6] and Intermetallics / Group-subgroup relation CeRuGe ! CeRuGeH [7]. The crystal chemical data of the huge number of ZrCuSiAs materials have recently Abstract. The basic structural chemistry of supercon- been reviewed [8]. ducting pnictides and pnictide oxides is reviewed. Crystal Although the basic crystallographic data of the many chemical details of selected compounds and group sub- ThCr2Si2 and ZrCuSiAs type compounds are known for group schemes are discussed with respect to phase transi- several years, especially for the ZrCuSiAs family, systema- tions upon charge-density formation, the ordering of va- tic property studies have been performed only recently. cancies, or the ordered displacements of oxygen atoms. These investigations mainly focused on p-type transparent Furthermore, the influences of doping and solid solutions semiconductors like LaCuSO (for a review see [9]) or the on the valence electron concentration are discussed in or- colored phosphide and arsenide oxides REZnPO [10] and der to highlight the structural and electronic flexibility of REZnAsO [11]. -
Thermomagnetic Effects in Cadmium Arsenide
Thermomagnetic effects in cadmium arsenide Citation for published version (APA): Blom, F. A. P. (1970). Thermomagnetic effects in cadmium arsenide. Technische Hogeschool Eindhoven. https://doi.org/10.6100/IR155506 DOI: 10.6100/IR155506 Document status and date: Published: 01/01/1970 Document Version: Publisher’s PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication: • A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version and the galley proof are versions of the publication after peer review. • The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal. -
Getting Ready for Indium Gallium Arsenide High-Mobility Channels
88 Conference report: VLSI Symposium Getting ready for indium gallium arsenide high-mobility channels Mike Cooke reports on the VLSI Symposium, highlighting the development of compound semiconductor channels in field-effect transistors on silicon for CMOS. esearchers across the world are readying the layer overgrowth or aspect-ratio trapping (ART) — are implementation of indium gallium arsenide free in the vertical direction, and thickness and surface R(InGaAs) and other III-V compound semicon- smoothness are determined post-growth by lithography ductors as high-mobility channel materials in field- or chemical mechanical polishing (CMP). The CELO effect transistors (FETs) on silicon (Si) for mainstream process filters out defects by the abrupt change in complementary metal-oxide-semiconductor (CMOS) growth direction from vertical to lateral, as constrained electronics applications. The latest Symposia on VLSI by the cavity. The researchers believe their technique Technology and Circuits in Kyoto, Japan in June featured avoids the main problems of alternative methods of a number of presentations from leading companies and integrating InGaAs into CMOS in terms of limited wafer university research groups directed towards this end. size, high cost, roughness, or background doping. In addition, Intel is proposing gallium nitride (GaN) The cap of the cavity was removed to access the for mobile applications such as voltage regulators or InGaAs for device fabrication. Also the InGaAs material radio-frequency power amplifiers, which require low was removed from the seed region to electrically power consumption and low-voltage operation. Away isolate the resulting devices from the underlying from III-V semiconductors, much interest has been silicon substrate. -
On the New Oxyarsenides Eu5zn2as5o and Eu5cd2as5o
crystals Article On the New Oxyarsenides Eu5Zn2As5O and Eu5Cd2As5O Gregory M. Darone 1,2, Sviatoslav A. Baranets 1,* and Svilen Bobev 1,* 1 Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA; [email protected] 2 The Charter School of Wilmington, Wilmington, DE 19807, USA * Correspondence: [email protected] (S.B.); [email protected] (S.A.B.); Tel.: +1-302-831-8720 (S.B. & S.A.B.) Received: 20 May 2020; Accepted: 1 June 2020; Published: 3 June 2020 Abstract: The new quaternary phases Eu5Zn2As5O and Eu5Cd2As5O have been synthesized by metal flux reactions and their structures have been established through single-crystal X-ray diffraction. Both compounds crystallize in the centrosymmetric space group Cmcm (No. 63, Z = 4; Pearson symbol oC52), with unit cell parameters a = 4.3457(11) Å, b = 20.897(5) Å, c = 13.571(3) Å; and a = 4.4597(9) Å, b = 21.112(4) Å, c = 13.848(3) Å, for Eu5Zn2As5O and Eu5Cd2As5O, respectively. The crystal structures include one-dimensional double-strands of corner-shared MAs4 tetrahedra (M = Zn, Cd) and As–As bonds that connect the tetrahedra to form pentagonal channels. Four of the five Eu atoms fill the space between the pentagonal channels and one Eu atom is contained within the channels. An isolated oxide anion O2– is located in a tetrahedral hole formed by four Eu cations. Applying the valence rules and the Zintl concept to rationalize the chemical bonding in Eu5M2As5O(M = Zn, Cd) reveals that the valence electrons can be counted as follows: 5 [Eu2+] + 2 [M2+] + 3 × × × [As3–] + 2 [As2–] + O2–, which suggests an electron-deficient configuration. -
Gallium Arsenide
pp 163-196.qxp 31/05/2006 10:18 Page 163 GALLIUM ARSENIDE 1. Exposure Data 1.1 Chemical and physical data 1.1.1 Nomenclature Chem. Abstr. Serv. Reg. No.: 1303-00-0 Deleted CAS Reg. No.: 12254-95-4, 106495-92-5, 116443-03-9, 385800-12-4 Chem. Abstr. Serv. Name: Gallium arsenide (GaAs) IUPAC Systematic Name: Gallium arsenide Synonyms: Gallium monoarsenide 1.1.2 Molecular formula and relative molecular mass GaAs Relative molecular mass: 144.6 1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm3 (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at temperatures above 480 °C (Wafer Technology Ltd, 1997) (f) Reactivity: Reacts with strong acid reducing agents to produce arsine gas (Wafer Technology Ltd, 1997) 1.1.4 Technical products and impurities Purity requirements for the raw materials used to produce gallium arsenide are stringent. For optoelectronic devices (light-emitting diodes (LEDs), laser diodes, photo- detectors, solar cells), the gallium and arsenic must be at least 99.9999% pure; for –163– pp 163-196.qxp 31/05/2006 10:18 Page 164 164 IARC MONOGRAPHS VOLUME 86 integrated circuits, a purity of 99.99999% is required. These purity levels are referred to by several names: 99.9999%-pure gallium is often called 6-nines, 6N or optoelectronic grade, while 99.99999%-pure gallium is called 7-nines, 7N, semi-insulating (SI) or integrated circuit (IC) grade. -
Topological Insulator State and Collapse of the Quantum Hall Effect in a Three-Dimensional Dirac Semimetal Heterojunction
PHYSICAL REVIEW X 10, 011050 (2020) Topological Insulator State and Collapse of the Quantum Hall Effect in a Three-Dimensional Dirac Semimetal Heterojunction David A. Kealhofer ,1 Luca Galletti ,2 Timo Schumann ,2 Alexey Suslov ,3 and Susanne Stemmer2,* 1Department of Physics, University of California, Santa Barbara, California 93106-9530, USA 2Materials Department, University of California, Santa Barbara, California 93106-5050, USA 3National High Magnetic Field Laboratory, Tallahassee, Florida 32310, USA (Received 10 July 2019; revised manuscript received 25 November 2019; accepted 23 December 2019; published 27 February 2020) Thin films promise new opportunities for the manipulation of surface states of topological semimetals with the potential to realize new states that cannot be obtained in bulk materials. Here, we report transport studies of gated Hall bar structures fabricated from approximately 50-nm-thick, (001)-oriented epitaxial films of cadmium arsenide, a prototype three-dimensional Dirac semimetal, in magnetic fields up to 45 T. The films exhibit a quantized Hall effect with pronounced odd-integer plateaus that is strikingly different from that of the more widely studied (112)-oriented films. We show that the unusual quantum Hall effect is a consequence of the inverted bulk band structure of cadmium arsenide that creates topological-insulator- like states at the bottom and top interfaces, each exhibiting a half-integer quantum Hall effect. A small potential offset between the two surfaces results in the crossing of the Landau levels and gives rise to the filling factor sequences observed in the experiments. Moreover, at large negative values of gate bias, the filling factor ν ¼ 1 is abruptly preempted by an insulating state that is accompanied by the collapse of the well-developed quantum Hall effect.