Gallium Arsenide
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A Multicenter Trial of Low Dose Gallium Nitrate in Patients with Advanced Paget’S Disease of Bone
Vol. 80. No. 2 Journalof CbnicalEndocrinology and Metabolism Pr’rrnrrd ,,, IJ S.A. CopyrIght0 1995by The EndocrineSociety A Multicenter Trial of Low Dose Gallium Nitrate in Patients with Advanced Paget’s Disease of Bone RICHARD S. BOCKMAN, FRANCOIS WILHELM, ETHEL SIRIS, FREDERICK SINGER, ARTHUR CHAUSMER*, RACHELLE BITTON, JON KOTLER, BARBARA J. BOSCO, DAVID R. EYRE, AND DAVID LEVENSON Department of Medicine, Hospital for Special Surgery and Cornell University Medical College (R.S.B., B.J.B., D.L.), New York, New York 10021; Research and Development, Fujisawa Pharmaceutical Co. (F.W.), Deer-field, Illinois 60015; Columbia University College of Physicians and Surgeons (E.S.), New York, New York 10032; St. John’s Hospital and Health Center, John Wayne Cancer Institute (F.S.1, Santa Monica, California 90404; the Division of Endocrinology, Long Island Jewish Hospital (R.B.1, New Hyde Park, New York 11042; Holy Cross Hospital (J.K.), Ft. Lauderdale, Florida 33008; and the Department of Orthopaedics, University of Washington (D.R.E.), Seattle, Washington 98195 ABSTRACT treated with the 0.5 mg/kg.day dose achieved a 50% or more reduction Gallium nitrate is a potent antiresorptive drug that has been ex- in enzyme activity. The nadir value in hydraxyproline excretion oc- tensively tested in patients with accelerated bone turnover. We have curred at 10 weeks, with mean changes of +9%, -lo%, and ~ 17% for evaluated the effects of this new agent in a pilot multicenter trial of the 0.05, 0.25, and 0.5 mg/kg.day doses, respectively; the difference 49 patients with advanced Paget’s disease of bone. -
Report of the Advisory Group to Recommend Priorities for the IARC Monographs During 2020–2024
IARC Monographs on the Identification of Carcinogenic Hazards to Humans Report of the Advisory Group to Recommend Priorities for the IARC Monographs during 2020–2024 Report of the Advisory Group to Recommend Priorities for the IARC Monographs during 2020–2024 CONTENTS Introduction ................................................................................................................................... 1 Acetaldehyde (CAS No. 75-07-0) ................................................................................................. 3 Acrolein (CAS No. 107-02-8) ....................................................................................................... 4 Acrylamide (CAS No. 79-06-1) .................................................................................................... 5 Acrylonitrile (CAS No. 107-13-1) ................................................................................................ 6 Aflatoxins (CAS No. 1402-68-2) .................................................................................................. 8 Air pollutants and underlying mechanisms for breast cancer ....................................................... 9 Airborne gram-negative bacterial endotoxins ............................................................................. 10 Alachlor (chloroacetanilide herbicide) (CAS No. 15972-60-8) .................................................. 10 Aluminium (CAS No. 7429-90-5) .............................................................................................. 11 -
TR-499: Indium Phosphide (CASRN 22398-80-7) in F344/N Rats And
NTP TECHNICAL REPORT ON THE TOXICOLOGY AND CARCINOGENESIS STUDIES OF INDIUM PHOSPHIDE (CAS NO. 22398-80-7) IN F344/N RATS AND B6C3F1 MICE (INHALATION STUDIES) NATIONAL TOXICOLOGY PROGRAM P.O. Box 12233 Research Triangle Park, NC 27709 July 2001 NTP TR 499 NIH Publication No. 01-4433 U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES Public Health Service National Institutes of Health FOREWORD The National Toxicology Program (NTP) is made up of four charter agencies of the U.S. Department of Health and Human Services (DHHS): the National Cancer Institute (NCI), National Institutes of Health; the National Institute of Environmental Health Sciences (NIEHS), National Institutes of Health; the National Center for Toxicological Research (NCTR), Food and Drug Administration; and the National Institute for Occupational Safety and Health (NIOSH), Centers for Disease Control and Prevention. In July 1981, the Carcinogenesis Bioassay Testing Program, NCI, was transferred to the NIEHS. The NTP coordinates the relevant programs, staff, and resources from these Public Health Service agencies relating to basic and applied research and to biological assay development and validation. The NTP develops, evaluates, and disseminates scientific information about potentially toxic and hazardous chemicals. This knowledge is used for protecting the health of the American people and for the primary prevention of disease. The studies described in this Technical Report were performed under the direction of the NIEHS and were conducted in compliance with NTP laboratory health and safety requirements and must meet or exceed all applicable federal, state, and local health and safety regulations. Animal care and use were in accordance with the Public Health Service Policy on Humane Care and Use of Animals. -
Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response
IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 3, JUNE 2018 2400209 Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response Dennis G. Deppe, Fellow, IEEE, Mingxin Li, Xu Yang, and Mina Bayat (Invited Paper) Abstract— Experimental data and modeling results are can efficiently conduct heat from the strongly pumped laser presented for a new type of vertical-cavity surface-emitting active volume, and in a laser cavity much smaller than possible laser (VCSEL) that solves numerous problems with oxide before with commercial edge-emitting laser diodes. VCSELs. In addition, the new oxide-free VCSEL can be scaled to small size. Modeling shows that this small size can dramatically This change made it possible to obtain much higher cur- increase the speed of the laser through control of self-heating. rent density, and therefore higher photon density, and higher Modeling compared with both the oxide and the new oxide-free stimulated emission rate than other laser diodes. Continually VCSEL predict intrinsic modulation speed for room temperature reducing the laser active volume and relying on relatively > approaching 80 GHz, indicating the potential for 100-Gb/s data high efficiency VCSEL designs have produced ever-increasing speed from directly modulated VCSELs. The modeling is one of if not the first to include self-heating and spectral detuning between laser diode speed. VCSELs now reign supreme in laboratory the gain and the cavity resonance that results from self-heating. demonstrations of direct modulation data speed due largely to The modeling results accurately accounts for the saturation in their combined small volume, matched cavity and gain region, modulation speed in very high-speed oxide VCSELs operating at and high internal heat flow through high quality epitaxial high temperature and accounts for the temperature of differential mirrors [15]–[23]. -
Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures
Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 2001 Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures. Xiaotao Su Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Su, Xiaotao, "Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures." (2001). LSU Historical Dissertations and Theses. 319. https://digitalcommons.lsu.edu/gradschool_disstheses/319 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UMI fiims the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand comer and continuing from left to right in equal sections with small overlaps. -
Material Safety Data Sheet
Material Safety Data Sheet Gallium(iii) nitrate hydrate, 99.9998%, ACC# 27373 Section 1 - Chemical Product and Company Identification MSDS Name: Gallium(iii) nitrate hydrate, 99.9998%, Catalog Numbers: AC212440000, AC212440010, AC212440050 Synonyms: Gallium nitrate; Gallium trinitrate; Nitric acid, gallium (3+) salt Company Identification: Acros Organics N.V. One Reagent Lane Fair Lawn, NJ 07410 For information in North America, call: 800-ACROS-01 For emergencies in the US, call CHEMTREC: 800-424-9300 Section 2 - Composition, Information on Ingredients CAS# Chemical Name Percent EINECS/ELINCS 13494-90-1 Gallium(III) nitrate hydrate 99.9998 236-815-5 Section 3 - Hazards Identification EMERGENCY OVERVIEW Appearance: white crystalline powder. Danger! Strong oxidizer. Contact with other material may cause a fire. Causes respiratory tract irritation. Causes eye and skin irritation. May cause digestive tract irritation. Hygroscopic (absorbs moisture from the air). Target Organs: No data found. Potential Health Effects Eye: Causes eye irritation. May cause conjunctivitis. Skin: Causes severe skin irritation. Ingestion: May cause burns to the gastrointestinal tract. May cause nausea, vomiting, and diarrhea, possibly with blood. Inhalation: Causes respiratory tract irritation. May cause acute pulmonary edema, asphyxia, chemical pneumonitis, and upper airway obstruction caused by edema. Chronic: Effects may be delayed. Section 4 - First Aid Measures Eyes: Immediately flush eyes with plenty of water for at least 15 minutes, occasionally lifting the upper and lower eyelids. Get medical aid imme diately. Skin: Get medical aid immediately. Immediately flush skin with plenty of water for at least 15 minutes while removing contaminated clothing and shoes. Wash clothing before reuse. Ingestion: Never give anything by mouth to an unconscious person. -
DFB Lasers Between 760 Nm and 16 Μm for Sensing Applications
Sensors 2010, 10, 2492-2510; doi:10.3390/s100402492 OPEN ACCESS sensors ISSN 1424-8220 www.mdpi.com/journal/sensors Review DFB Lasers Between 760 nm and 16 µm for Sensing Applications Wolfgang Zeller *, Lars Naehle, Peter Fuchs, Florian Gerschuetz, Lars Hildebrandt and Johannes Koeth nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany; E-Mails: [email protected] (L.N.); [email protected] (P.F.); [email protected] (F.G.); [email protected] (L.H.); [email protected] (J.K.) * Author to whom correspondence should be addressed; E-Mail: [email protected]; Tel.: +49-931-90827-10; Fax: +49-931-90827-19. Received: 20 January 2010; in revised form: 22 February 2010 / Accepted: 6 March 2010 / Published: 24 March 2010 Abstract: Recent years have shown the importance of tunable semiconductor lasers in optical sensing. We describe the status quo concerning DFB laser diodes between 760 nm and 3,000 nm as well as new developments aiming for up to 80 nm tuning range in this spectral region. Furthermore we report on QCL between 3 µm and 16 µm and present new developments. An overview of the most interesting applications using such devices is given at the end of this paper. Keywords: DFB; laser; QCL; sensing Classification: PACS 42.55.Px; 42.62.Fi; 42.62.-b 1. Introduction In recent years the importance of lasers in optical sensing has been continuously increasing [1]. Many apparatus use long-known techniques like fluorescence measurements after excitation by photons, e.g., to detect petroleum contamination in soils [2]. -
Elimination of Arthritis Pain and Inflammation for Over Two Years With
Artrite por 2 anos tratada com aplicação local por 90 minutos com nitrato de gálio a 14% Elimination of arthritis pain and inflammation for over two years with a single 90 minute, topical 14% gallium nitrate treatment: Case reports and review of actions of gallium III. - Medical Hypotheses Vol 65/6 pp 1136-1141 by George Eby Austin, Texas See abstract at Elsevier Science Direct here See PDF version of published article here Abstract Arthritis is inflammation in a joint often with joint damage, usually accompanied by pain, swelling and stiffness, resulting from infection, trauma, degenerative changes, metabolic disturbances, autoimmune or other causes. It occurs in various forms, including rheumatoid arthritis, osteoarthritis, bacterial arthritis and gout. Gallium III can inhibit the production of inflammatory cytokines, such as IL-1beta, produced by macrophage-like cells in vitro. A dose-dependent inhibition of IL-1beta and TPA stimulated MMP activity by gallium nitrate at increasing concentrations occurs, demonstrating that gallium nitrate can be a useful modulator of inflammation in arthritis. Gallium III is an inhibitor of bone resorption and is an effective treatment for hypercalcemia. Gallium III has been reported to be effective in the treatment of mycobacterium butycicum-induced arthritis in rats by antagonism of iron III. Long-term elimination of pain from arthritis by gallium III was first observed in horses primarily being treated for navicular disease. Several people treating their horses with gallium nitrate coincidentally found that arthritis pain in their fingers ended and did not return after soaking their hands in 14% gallium nitrate solution. Therefore, the severely arthritic hands of a 60-year old woman were topically treated with a 14% aqueous solution of gallium nitrate for 90 minutes. -
Scalable Synthesis of Inas Quantum Dots Mediated Through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F
pubs.acs.org/JACS Communication Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F. Perkinson, Lili Wang, Eric C. Hansen, and Moungi G. Bawendi* Cite This: J. Am. Chem. Soc. 2020, 142, 4088−4092 Read Online ACCESS Metrics & More Article Recommendations *sı Supporting Information ABSTRACT: Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700− 1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs. -
III-V Material Properties Welcome to This Section on III-V PV Technology. in This Video We Will Discuss the Material
III-V Material Properties Welcome to this section on III-V PV technology. In this video we will discuss the material properties of the semiconductors used for this technology. In this video, you will learn what the III-V PV technology exactly is and how it is different from other solar cell technologies. We will then discuss the structural properties of III-V semiconductors. In the next video we will look into the electrical and optical properties of III- V materials. The III-V PV technology, as the name implies, utilizes elements of the 3-A group and the 5-A group in the periodic table of elements. As you might recall, group 3 elements have 3 electrons in their outer valence shell, and group 5 elements have 5 valence electrons. One of the most common III-V absorber materials is formed by bonding the group 3 material gallium, with the group 5 material arsenic. Several such combinations are possible however, and many different III-V alloys are used as an absorber material by the PV industry. Examples include Gallium phosphide, Indium phosphide, indium arsenide, Gallium indium arsenide, gallium indium phosphide, aluminium-gallium-indium-arsenide and aluminium- gallium-indium-phosphide. An important question for III-V technology is how abundant are the III- and V- elements. As discussed at the start of this course, of these five elements, only aluminium and phosphorus are relatively abundant in nature. Gallium, arsenide and germanium are not rare or precious metals, but they are much less abundant than silicon. Indium is rare and in high demand. -
University of Stockholm
UNIVERSITY OF STOCKHOLM INSTITUTE OF PHYSICS NEW METALS — A study on the use of and exposure to certain metals and their compounds from a toxicological viewpoint U. BERGQVIST USIP Report 83 - 11 December 1983 NEW METALS A study on the use of and exposure to certain metals and their compounds from a toxicological viewpoint Ulf Bergqvist, with contributions from Foad Vojdani Ghamsari Theoretical Physics, University of Stockholm Vanadisvägen 9, S—113 46 Stockholm, Sweden I'm still confused - but on a higher level USIP Report 83--1 December 1983 - I - LIST OF CONTENTS (IN BRIEF) Page: List of contents (in brief) I List of contents (in details) III Acknowledgements X Disposition of this report XI Introduction 1 Section 1: Exposure to metals and metal compounds Preamble 3-6 Criteria based on total world consumption 7-13 Criteria based on probable increases in world metal consumption 1 4-22 Criteria based on exposure to metal emissions from sources other than metal consumption 23-29 Reconfirmation of metals found interesting in this section 30-33 Summary of section 1 34-38 Section 2: ' 1 e extent of toxicological knowledge and * search on metals and their compounds Preamb c 39-42 The re.://ch activity on toxic effects of metals ,nd metal compounds 43-49 Differe t organisms responses to metal compounds 50-r54 Introciu :• ,ion of new metal compounds in industrial consumption and its toxicological impli- cation 55-60 An es . mate of the quantity of toxicological infor- mation on metal and metal compounds in reviews 61-65 An evaluation of the relevance of available toxico- logical information to present and future industrial consumption of certain metals 66-72 Summar. -
Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination
Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures David Mouneyrac,1,2 John G. Hartnett,1 Jean-Michel Le Floch,1 Michael E. Tobar,1 Dominique Cros,2 Jerzy Krupka3∗ 1School of Physics, University of Western Australia 35 Stirling Hwy, Crawley 6009 WA Australia 2Xlim, UMR CNRS 6172, 123 av. Albert Thomas, 87060 Limoges Cedex - France 3Institute of Microelectronics and Optoelectronics Department of Electronics, Warsaw University of Technology, Warsaw, Poland (Dated: October 27, 2018) We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semicon- ductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data. PACS numbers: 72.20.Jv 71.20.Nr 77.22.-d I.