DOCSLIB.ORG

Environmental Protection Agency § 712.30

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Environmental Protection Agency § 712.30 Environmental Protection Agency § 712.30 (2) As a non-isolated intermediate. ment Information Manufacturer’s Re- (3) As an impurity. port for each chemical substance or [47 FR 26998, June 22, 1982; 47 FR 28382, June mixture that is listed or designated in 30, 1982] this section. (2) Unless a respondent has already § 712.28 Form and instructions. prepared a Manufacturer’s Report in (a) Manufacturers and importers sub- conformity with conditions set forth in ject to this subpart must submit a sin- paragraph (a)(3) of this section, the in- gle EPA Form No. 7710–35, ‘‘Manufac- formation in each Manufacturer’s Re- turer’s Report—Preliminary Assess- port must cover the respondent’s latest ment Information,’’ for each plant site complete corporate fiscal year as of the manufacturing or importing a chem- effective date. The effective date will ical substance listed in § 712.30. be 30 days after the FEDERAL REGISTER (b) Reporting companies may submit publishes a rule amendment making their reports through individual plant the substance or mixture subject to sites or company headquarters as they this subpart B. choose. A separate form must be sub- (3) Persons subject to this subpart B mitted for each plant site manufac- need not comply with the requirements turing the chemical substance. of paragraph (a)(2) of this section if (c) You must submit forms by one of they meet either one of the following the following methods: conditions: (1) Mail, preferably certified, to the (i) The respondent has previously and Document Control Office (DCO) voluntarily provided EPA with a Manu- (7407M), Office of Pollution Prevention facturer’s Report on a chemical sub- and Toxics (OPPT), Environmental stance or mixture subject to this sub- Protection Agency, 1200 Pennsylvania part B, which contains data for a one- Ave., NW., Washington, DC 20460–0001, year period ending no more than three ATTN: 8(a) PAIR Reporting. years prior to the effective date de- (2) Hand delivery to OPPT Document scribed in paragraph (a)(2) of this sec- Control Office (DCO), EPA East, Rm. 6428, 1201 Constitution Ave., NW., tion. Respondents meeting this condi- Washington, DC, ATTN: 8(a) PAIR Re- tion must notify EPA by letter of their porting. The DCO is open from 8 a.m. desire to have the voluntary submis- to 4 p.m., Monday through Friday, ex- sion used in lieu of a current data sub- cluding legal holidays. The telephone mission and must verify the complete- number for the DCO is (202)564–8930. ness and current accuracy of the volun- (d) Form 7710–35, Manufacturer’s Re- tarily submitted data. Such letters port—Preliminary Assessment Infor- must contain the following language: mation or PAIR form and instructions ‘‘I hereby certify that, to the best of may be obtained by telephoning or my knowledge and belief, all informa- writing the Environmental Assistance tion entered on this form is complete Division. The telephone number and and accurate. I agree to permit access the address of the Environmental As- to, and the copying of records by, a sistance Division is: Phone Number duly authorized representative of the (202) 554–1404, TDD (202) 554–0551. Ad- EPA Administrator, in accordance dress: Environmental Assistance Divi- with the Toxic Substances Control Act, sion (7406), Office of Pollution Preven- to document any information reported tion and Toxics, Environmental Pro- on the form.’’ Notification letters must tection Agency, 1200 Pennsylvania be submitted prior to the reporting Ave., NW., Washington, DC 20460. deadline. (ii) The respondent has previously [47 FR 26998, June 22, 1982, as amended at 52 FR 20083, May 29, 1987; 53 FR 12523, Apr. 15, submitted a Manufacturer’s Report on 1988; 60 FR 31921, June 19, 1995; 60 FR 34463, a chemical substance or mixture sub- July 3, 1995; 71 FR 47126, Aug. 16, 2006] ject to this subpart B to the Inter- agency Testing Committee, but not to § 712.30 Chemical lists and reporting EPA, and that Report contained data periods. for a one-year period ending less than (a)(1) Persons subject to this subpart three years prior to the effective date B must submit a Preliminary Assess- described in paragraph (a)(2) of this 65 VerDate Nov<24>2008 13:55 Aug 11, 2009 Jkt 217172 PO 00000 Frm 00075 Fmt 8010 Sfmt 8010 Y:\SGML\217172.XXX 217172 cprice-sewell on DSKDVH8Z91PROD with CFR § 712.30 40 CFR Ch. I (7–1–09 Edition) section. Respondents meeting this con- substance, mixture or category may be dition must submit a copy of the Man- withdrawn, for good cause, from the ufacturer’s Report to EPA, and must rule’s reporting requirements prior to submit an accompanying letter noti- the effective date. Any information fying EPA of the respondent’s intent submitted showing why a substance, that the submission be used in lieu of a mixture or category should be removed current Manufacturer’s Report. The from the rule must be received by EPA notification letter must verify the within 14 days after the date of publi- completeness and current accuracy of cation of the notice under this para- the voluntarily submitted data. Such a graph. If a substance, mixture or cat- letter must contain the following lan- egory is removed, a FEDERAL REGISTER guage: ‘‘I hereby certify that, to the notice announcing this decision will be best of my knowledge and belief, all in- published no later than the effective formation entered on this form is com- date of the amendment. plete and accurate. I agree to permit (2) You must submit information by access to, and the copying of records one of the following methods: by, a duly authorized representative of (i) Mail, preferably certified, to the the EPA Administrator, in accordance Document Control Office (DCO) with the Toxic Substances Control Act, (7407M), Office of Pollution Prevention to document any information reported and Toxics (OPPT), Environmental on the form.’’ The submission must be Protection Agency, 1200 Pennsylvania made prior to the reporting deadline. Ave., NW., Washington, DC 20460–0001, (b) Except as provided in paragraph ATTN: 8(a) Auto-ITC. (c) of this section, chemical substances (ii) Hand delivery to OPPT Document and designated mixtures will be added Control Office (DCO), EPA East, Rm. after a notice of proposed amendment 6428, 1201 Constitution Ave., NW., of this subpart is published in the FED- Washington, DC, ATTN: 8(a) Auto-ITC. ERAL REGISTER. There will be a 30 day Reporting. The DCO is open from 8 a.m. public comment period on each notice; to 4 p.m., Monday through Friday, ex- after consideration of the comments, a cluding legal holidays. The telephone final amendment will identify the sub- number for the DCO is (202)564–8930. stances and mixtures added. (d) Manufacturers and importers of (c)(1) Chemical substances, mixtures, the substances listed below must sub- and categories of substances or mix- mit a Preliminary Assessment Infor- tures that have been added by the mation Manufacturer’s Report for each Interagency Testing Committee, estab- site at which they manufacture or im- lished under section 4(e) of TSCA, to port each substance by the reporting the section 4(e) Priority List, for test- date shown in the table below. The sub- ing consideration by the Agency, will stances are listed in Chemical Ab- be added to this section 30 days after stracts Service Registry Number order. EPA issues for publication in the FED- Typically EPA lists the trivial or com- ERAL REGISTER a rule amendment list- mon name first, then, following the ing these chemical substances, mix- symbol ‘‘- -’’, EPA lists the substance tures and categories. A Preliminary by its TSCA Chemical Substance In- Assessment Information—Manufactur- ventory name. Whenever EPA lists a er’s Report must be submitted for each single name, the name may be either chemical substance and mixture within the TSCA Chemical Substance Inven- 60 days after the effective date of the tory name, a trivial name, or a com- listing. At the discretion of the Assist- mon name. Generally, when a single ant Administrator for Prevention, Pes- name is listed, it is the TSCA Chemical ticides and Toxic Substances, a listed Substances Inventory name. Effective Reporting CAS No. Substance date date 78-10-4 Ethyl silicate.................................................................................................................... 8/23/00 10/23/00 90-30-2 N-Phenyl-1-naphthylamine .............................................................................................. 9/30/91 11/27/91 100-40-3 4-Vinylcyclohexene ......................................................................................................... 1/11/90 3/12/90 108-95-5 Thiophenol ....................................................................................................................... 1/26/94 3/28/94 109-87-5 Methylal ........................................................................................................................... 8/23/00 10/23/00 118-79-6 2,4,6-tribromophenol ....................................................................................................... 1/11/90 3/12/90 66 VerDate Nov<24>2008 13:55 Aug 11, 2009 Jkt 217172 PO 00000 Frm 00076 Fmt 8010 Sfmt 8010 Y:\SGML\217172.XXX 217172 cprice-sewell on DSKDVH8Z91PROD with CFR Environmental Protection Agency § 712.30 Effective Reporting CAS No. Substance date date 133-49-3 Pentachlorothiophenol ..................................................................................................... 8/27/01 10/24/01 136–35–6 1-Triazene, 1,3-diphenyl-...............................................................................................
Load more

Recommended publications
  • (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan
    USO09543378B2 (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan. 10, 2017 (54) SEMICONDUCTOR DEVICES AND USPC ........................................... 257/25, 347, 402 FABRICATION METHODS THEREOF See application file for complete search history. (71) Applicant: GLOBALFOUNDRIES Inc., Grand (56) References Cited Cayman (KY) U.S. PATENT DOCUMENTS (72) Inventor: Jagar Singh, Clifton Park, NY (US) 4,940,671 A * 7/1990 Small ................ HO1L 21,82285 257 (491 (73) Assignee: GLOBALFOUNDRIES INC., Grand 8,610,241 B1* 12/2013 Hu ...................... HOL 270629 Cayman (KY) 257,353 2004/0095698 A1* 5, 2004 Gerrish ............... HOL27/O255 *) Notice: Subject to anyy disclaimer, the term of this 361 (91.1 patent is extended or adjusted under 35 2004/0253779 A1* 12/2004 Hong ............... HOL 21,8249 U.S.C. 154(b) by 10 days. 438,203 (21) Appl. No.: 14/467,420 * cited by examiner Primary Examiner — Kenneth Parker (22) Filed: Aug. 25, 2014 Assistant Examiner — Warren H Kilpatrick (65) Prior Publication Data (74) Attorney, Agent, or Firm — Heslin Rothenberg Farley & Mesiti P.C.; Kristian E. Ziegler US 2016/OO56231 A1 Feb. 25, 2016 (57) ABSTRACT (51) Int. Cl. Semiconductor devices and fabrication methods thereof are HOIL 29/06 (2006.01) provided. The semiconductor devices include: a substrate, HOIL 29/66 (2006.01) the Substrate including a p-type well adjoining an n-type HOIL 29/735 (2006.01) well; a first p-type region and a first n-type region disposed HOIL 29/47 (2006.01) within the n-type well of the substrate, where the first p-type HOIL 29/423 (2006.01) region at least partially encircles the first n-type region; and HOIL 29/08 (2006.01) a second p-type region and a second n-type region disposed HOIL 29/10 (2006.01) in the p-type well of the substrate, where the second n-type (52) U.S.
    [Show full text]
  • TR-499: Indium Phosphide (CASRN 22398-80-7) in F344/N Rats And
    NTP TECHNICAL REPORT ON THE TOXICOLOGY AND CARCINOGENESIS STUDIES OF INDIUM PHOSPHIDE (CAS NO. 22398-80-7) IN F344/N RATS AND B6C3F1 MICE (INHALATION STUDIES) NATIONAL TOXICOLOGY PROGRAM P.O. Box 12233 Research Triangle Park, NC 27709 July 2001 NTP TR 499 NIH Publication No. 01-4433 U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES Public Health Service National Institutes of Health FOREWORD The National Toxicology Program (NTP) is made up of four charter agencies of the U.S. Department of Health and Human Services (DHHS): the National Cancer Institute (NCI), National Institutes of Health; the National Institute of Environmental Health Sciences (NIEHS), National Institutes of Health; the National Center for Toxicological Research (NCTR), Food and Drug Administration; and the National Institute for Occupational Safety and Health (NIOSH), Centers for Disease Control and Prevention. In July 1981, the Carcinogenesis Bioassay Testing Program, NCI, was transferred to the NIEHS. The NTP coordinates the relevant programs, staff, and resources from these Public Health Service agencies relating to basic and applied research and to biological assay development and validation. The NTP develops, evaluates, and disseminates scientific information about potentially toxic and hazardous chemicals. This knowledge is used for protecting the health of the American people and for the primary prevention of disease. The studies described in this Technical Report were performed under the direction of the NIEHS and were conducted in compliance with NTP laboratory health and safety requirements and must meet or exceed all applicable federal, state, and local health and safety regulations. Animal care and use were in accordance with the Public Health Service Policy on Humane Care and Use of Animals.
    [Show full text]
  • Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response
    IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 54, NO. 3, JUNE 2018 2400209 Advanced VCSEL Technology: Self-Heating and Intrinsic Modulation Response Dennis G. Deppe, Fellow, IEEE, Mingxin Li, Xu Yang, and Mina Bayat (Invited Paper) Abstract— Experimental data and modeling results are can efficiently conduct heat from the strongly pumped laser presented for a new type of vertical-cavity surface-emitting active volume, and in a laser cavity much smaller than possible laser (VCSEL) that solves numerous problems with oxide before with commercial edge-emitting laser diodes. VCSELs. In addition, the new oxide-free VCSEL can be scaled to small size. Modeling shows that this small size can dramatically This change made it possible to obtain much higher cur- increase the speed of the laser through control of self-heating. rent density, and therefore higher photon density, and higher Modeling compared with both the oxide and the new oxide-free stimulated emission rate than other laser diodes. Continually VCSEL predict intrinsic modulation speed for room temperature reducing the laser active volume and relying on relatively > approaching 80 GHz, indicating the potential for 100-Gb/s data high efficiency VCSEL designs have produced ever-increasing speed from directly modulated VCSELs. The modeling is one of if not the first to include self-heating and spectral detuning between laser diode speed. VCSELs now reign supreme in laboratory the gain and the cavity resonance that results from self-heating. demonstrations of direct modulation data speed due largely to The modeling results accurately accounts for the saturation in their combined small volume, matched cavity and gain region, modulation speed in very high-speed oxide VCSELs operating at and high internal heat flow through high quality epitaxial high temperature and accounts for the temperature of differential mirrors [15]–[23].
    [Show full text]
  • Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures
    Louisiana State University LSU Digital Commons LSU Historical Dissertations and Theses Graduate School 2001 Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures. Xiaotao Su Louisiana State University and Agricultural & Mechanical College Follow this and additional works at: https://digitalcommons.lsu.edu/gradschool_disstheses Recommended Citation Su, Xiaotao, "Indium Arsenide/Gallium Arsenide Quantum Dots and Nanomesas: Multimillion-Atom Molecular Dynamics Solutions on Parallel Architectures." (2001). LSU Historical Dissertations and Theses. 319. https://digitalcommons.lsu.edu/gradschool_disstheses/319 This Dissertation is brought to you for free and open access by the Graduate School at LSU Digital Commons. It has been accepted for inclusion in LSU Historical Dissertations and Theses by an authorized administrator of LSU Digital Commons. For more information, please contact [email protected]. INFORMATION TO USERS This manuscript has been reproduced from the microfilm master. UMI fiims the text directly from the original or copy submitted. Thus, some thesis and dissertation copies are in typewriter face, while others may be from any type of computer printer. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleedthrough, substandard margins, and improper alignment can adversely affect reproduction.. In the unlikely event that the author did not send UMI a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. Oversize materials (e.g., maps, drawings, charts) are reproduced by sectioning the original, beginning at the upper left-hand comer and continuing from left to right in equal sections with small overlaps.
    [Show full text]
  • Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres
    MEASUREMENT AND APPLICATION OF OPTICAL NONLINEARITIES IN INDIUM PHOSPHIDE, CADMIUM MERCURY TELLERIDE AND PHOTONIC CRYSTAL FIBRES Trefor James Sloanes A Thesis Submitted for the Degree of DEng at the University of St. Andrews 2009 Full metadata for this item is available in the St Andrews Digital Research Repository at: https://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/723 This item is protected by original copyright Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres This thesis is presented in application for the degree of Doctor of Engineering to the University of St. Andrews by Trefor James Sloanes I, Trefor James Sloanes, hereby certify that this thesis, which is approximately 28,500 words in length, has been written by me, that it is the record of work carried out by me and that it has not been submitted in any previous application for a higher degree. I was admitted as a research student in October, 2003 and as a candidate for the degree of Doctor of Engineering in August, 2004; the higher study for which this is a record was carried out in the University of St Andrews between 2003 and 2008. date ……………… signature of candidate ……………… I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of Doctor of Engineering in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree.
    [Show full text]
  • Scalable Synthesis of Inas Quantum Dots Mediated Through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F
    pubs.acs.org/JACS Communication Scalable Synthesis of InAs Quantum Dots Mediated through Indium Redox Chemistry Matthias Ginterseder, Daniel Franke, Collin F. Perkinson, Lili Wang, Eric C. Hansen, and Moungi G. Bawendi* Cite This: J. Am. Chem. Soc. 2020, 142, 4088−4092 Read Online ACCESS Metrics & More Article Recommendations *sı Supporting Information ABSTRACT: Next-generation optoelectronic applications centered in the near-infrared (NIR) and short-wave infrared (SWIR) wavelength regimes require high-quality materials. Among these materials, colloidal InAs quantum dots (QDs) stand out as an infrared-active candidate material for biological imaging, lighting, and sensing applications. Despite significant development of their optical properties, the synthesis of InAs QDs still routinely relies on hazardous, commercially unavailable precursors. Herein, we describe a straightforward single hot injection procedure revolving around In(I)Cl as the key precursor. Acting as a simultaneous reducing agent and In source, In(I)Cl smoothly reacts with a tris(amino)arsenic precursor to yield colloidal InAs quantitatively and at gram scale. Tuning the reaction temperature produces InAs cores with a first excitonic absorption feature in the range of 700− 1400 nm. A dynamic disproportionation equilibrium between In(I), In metal, and In(III) opens up additional flexibility in precursor selection. CdSe shell growth on the produced cores enhances their optical properties, furnishing particles with center emission wavelengths between 1000 and 1500 nm and narrow photoluminescence full-width at half-maximum (FWHM) of about 120 meV throughout. The simplicity, scalability, and tunability of the disclosed precursor platform are anticipated to inspire further research on In-based colloidal QDs.
    [Show full text]
  • Vertically Aligned Arrays of Insb Nanostructures for Tuning Light Absorption in the Mid-Infrared
    Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters Citable link http://nrs.harvard.edu/urn-3:HUL.InstRepos:37799758 Terms of Use This article was downloaded from Harvard University’s DASH repository, and is made available under the terms and conditions applicable to Other Posted Material, as set forth at http:// nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of- use#LAA Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared Nicholas Collins A Thesis in the Field of Bioengineering and Nanotechnology for the Degree of Master of Liberal Arts Harvard University March 2018 Copyright 2017 Nicholas Collins Abstract Infrared detection is valuable across a diverse range of fields. Military applications have long been the focus of development of infrared detection technology, but as accessibility to infrared detectors grows, industries ranging from waste management to medicine have shown broad uses for the technology. Imaging of biological samples is particularly well suited for near and mid infrared imaging as opaque superficial layers often inhibit the use of visible light to detect underlying structures which may hold diagnostic value. Infrared detecting devices are typically underutilized in a biomedical setting despite there being many potential applications. The primary objective of this research was to provide a proof of concept for a novel transmission filters system in the near and mid infrared range using vertically oriented indium antimonide (InSb) nanostructures. This was achieved by conducting optical simulations of InSb nanowires, developing an ICP-RIE etching process suitable for InSb, and, lastly, by measuring specular reflectance of the InSb nanostructure arrays using FT-IR microscopy.
    [Show full text]
  • United States Patent (19) (11) 4,237,471 Pommerrenig 45) Dec
    United States Patent (19) (11) 4,237,471 Pommerrenig 45) Dec. 2, 1980 54 METHOD OF PRODUCING A 58) Field of Search ........................ 357/30, 16, 61, 63 SEMCONDUCTORPHOTODODE OF NDUM ANTMONDE AND DEVICE 56 References Cited THEREOF U.S. PATENT DOCUMENTS 75 Inventor: Dieter H. Pommerrenig, Burke, Va. 3,558,373 1/1971 Moody ................................. 148/171 73 Assignees: Hamamatsu Corporation, Middlesex, Primary Examiner-Martin H. Edlow N.J.; Hamamatsu TV Co., Ltd., Attorney, Agent, or Firm-Moonray Kojima Hamamatsu, Japan 57 ABSTRACT (21 Appl. No.: 51,245 A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide 22 Filed: Jun. 22, 1979 epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, Related U.S. Application Data utilizing conventional vapor phase or liquid phase epi 60 Continuation of Ser. No. 879,640, Feb. 21, 1978, aban taxial techniques, wherein the antimony in the epitaxial doned, which is a division of Ser. No. 739,659, Nov. 8, layer is partially replaced by either arsenic or phospho 1976, abandoned. rus, thus resulting in a high performing photoelectric 51 Int. Cl’............................................. H01L 27/14 device. 52 U.S.C. ........................................ 357/30; 357/16; 357/61 6 Claims, 16 Drawing Figures U.S. Patent Dec. 2, 1980 Sheet 1 of 2 4,237,471 A.27, 7 W/W 727.4c /////////////////// XXXXXXXXXXXXXXXXXXXXXXXX A27.4eXXYYXXYYXXXX U.S. Patent Dec. 2, 1980 Sheet 2 of 2 4,237,471 77.5A O 27 PZZZZZZZZZZZZZZZZZZZZ-53 " V ZZZZZZZZZZZZZZZZZZZZZZZ \ \ 22222XXXXXXXXXXXV N Ny.V 4,237,471 2 thereby, and wherein an indium antimonide epitaxial METHOD OF PRODUCING ASEMECONDUCTOR layer of one type conductivity is epitaxially grown onto PHOTODODE OF NEDUMANTMONDE AND an indium antimonide substrate of another type conduc DEVICE THEREOF tivity, with the antimony in the epitaxial layer partially replaced with arsenic or phosphorus, Photodiodes and This is a continuation of application Ser.
    [Show full text]
  • III-V Material Properties Welcome to This Section on III-V PV Technology. in This Video We Will Discuss the Material
    III-V Material Properties Welcome to this section on III-V PV technology. In this video we will discuss the material properties of the semiconductors used for this technology. In this video, you will learn what the III-V PV technology exactly is and how it is different from other solar cell technologies. We will then discuss the structural properties of III-V semiconductors. In the next video we will look into the electrical and optical properties of III- V materials. The III-V PV technology, as the name implies, utilizes elements of the 3-A group and the 5-A group in the periodic table of elements. As you might recall, group 3 elements have 3 electrons in their outer valence shell, and group 5 elements have 5 valence electrons. One of the most common III-V absorber materials is formed by bonding the group 3 material gallium, with the group 5 material arsenic. Several such combinations are possible however, and many different III-V alloys are used as an absorber material by the PV industry. Examples include Gallium phosphide, Indium phosphide, indium arsenide, Gallium indium arsenide, gallium indium phosphide, aluminium-gallium-indium-arsenide and aluminium- gallium-indium-phosphide. An important question for III-V technology is how abundant are the III- and V- elements. As discussed at the start of this course, of these five elements, only aluminium and phosphorus are relatively abundant in nature. Gallium, arsenide and germanium are not rare or precious metals, but they are much less abundant than silicon. Indium is rare and in high demand.
    [Show full text]
  • Indium Phosphide 22398-80-7
    Indium Phosphide 22398-80-7 DRAFT REPORT SUPPORT FOR CHEMICAL NOMINATION AND SELECTION PROCESS OF THE NATIONAL TOXICOLOGY PROGRAM NIEHS CONTRACT NO. NO1-ES-85218 EXECUTIVE SUMMARY OF DATA INDIUM PHOSPHIDE (22398-80-7) November 7, 1988 Submitted to: National Toxicology Program National Institutes of Health Building 31, Room 2B-55 Bethesda, Maryland 20205 Submitted by: Chemical Hazard Assessment Division Syracuse Research Corporation Merrill Lane Syracuse, New York 13210 Overview for Indium Phosphide Nomination History: Indium phosphide was nominated to the NTP for toxicity and carcinogenicity testing by NIEHS based on its use in the electronics industry, its potential acute toxicity, and lack of toxicity data. Physical and Chemical Properties: Brittle, metallic mass with a melting point of 1070oC. No information was found on its solubility in water or organic solvents. It is slightly soluble in mineral acids. Production, Uses, and Exposure: The TSCA Inventory reported three companies as domestic producers of indium phosphide in 1977. One of these reported less than 1,000 pounds; the other two did not report production. No other information on the domestic production or importation of indium phosphide was available. Indium phosphide is used in semiconductor devices, injector lasers, and solar cells. It has been proposed to replace silicon in microchips. Indium phosphide is not listed in the NOES data base. The ACGIH has not recommended a TLV for indium phosphide but has recommended a TLV of 0.1 mg/m3 for indium and its compounds. Regulatory Status: No information was found on the regulatory status of indium phosphide. Toxicological data: Human - No information on toxicological effects in humans was found.
    [Show full text]
  • Room-Temperature Indium Antimonide Mid-Infrared Photodiode Potential Applications Include Human Body Detection for Power Savings
    72 Technology focus: Photodetectors Room-temperature indium antimonide mid-infrared photodiode Potential applications include human body detection for power savings. sahi Kasei Microdevices Corporation and Kyushu University in Japan have developed room-tem- Aperature mid-infrared semiconductor detectors based on indium antimonide (InSb) [Koichiro Ueno et al, Jpn. J. Appl. Phys., vol52, p092202, 2013]. The researchers believe such devices could be used to save power in facilities where no people are present through the detection or not of human body heat. The human body gives out detectable thermal radia- tion in the range 3–25µm, peaking around 10µm (essentially a Planck blackbody distribution for 36–37°C). The Asahi Kasei/Kyushu device covers the 2–7µm range. Present methods of detecting humans tend to depend on measuring temperature changes (e.g. pyroelectric devices), so if the people are stationary a false signal to turn off power could be sent. However, mid-infrared semiconductor detectors usually need cooling to operate. To enable room-temperature operation, the researchers worked to reduce the non radiation part of the current (‘the diffusion current’) of the device by increasing the resistance under zero bias (R0). The device also featured improved IR incidence efficiency by gathering radiation through the gallium arsenide (GaAs) substrate rather than through InSb layers. In addition, the GaAs surface was roughened to reduce reflection. The indium antimonide (InSb) photodiode structure (Figure 1b) was grown on a semi-insulating (001) GaAs substrate using Riber MBE-49 molecular beam epitaxy system. The substrate temperature during growth was 410°C. The group V (Sb) to group III (In) flux ratio was 2:1.
    [Show full text]
  • Advances of Sensitive Infrared Detectors with Hgte Colloidal Quantum Dots
    coatings Review Advances of Sensitive Infrared Detectors with HgTe Colloidal Quantum Dots Shuo Zhang, Yao Hu and Qun Hao * Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; [email protected] (S.Z.); [email protected] (Y.H.) * Correspondence: [email protected] Received: 8 July 2020; Accepted: 30 July 2020; Published: 4 August 2020 Abstract: The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA). Keywords: HgTe Colloidal quantum dots; infrared; photoconductors; photovoltaic; multispectral imaging 1. Introduction Infrared detectors are widely used in thermal imaging [1,2], material spectroscopy analysis [3–5], autonomous driving assistants [6], surveillance [7] and biological health monitoring [8–10]. Before 1940s, the dominant infrared detectors were thermal detector, such as thermocouple detector [11], bolometer [12] and pyroelectric detector [13], which mainly relied on the detection of incident power rather than the energy of the incoming photons.
    [Show full text]