DOCSLIB.ORG

(12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
(12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan USO09543378B2 (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan. 10, 2017 (54) SEMICONDUCTOR DEVICES AND USPC ........................................... 257/25, 347, 402 FABRICATION METHODS THEREOF See application file for complete search history. (71) Applicant: GLOBALFOUNDRIES Inc., Grand (56) References Cited Cayman (KY) U.S. PATENT DOCUMENTS (72) Inventor: Jagar Singh, Clifton Park, NY (US) 4,940,671 A * 7/1990 Small ................ HO1L 21,82285 257 (491 (73) Assignee: GLOBALFOUNDRIES INC., Grand 8,610,241 B1* 12/2013 Hu ...................... HOL 270629 Cayman (KY) 257,353 2004/0095698 A1* 5, 2004 Gerrish ............... HOL27/O255 *) Notice: Subject to anyy disclaimer, the term of this 361 (91.1 patent is extended or adjusted under 35 2004/0253779 A1* 12/2004 Hong ............... HOL 21,8249 U.S.C. 154(b) by 10 days. 438,203 (21) Appl. No.: 14/467,420 * cited by examiner Primary Examiner — Kenneth Parker (22) Filed: Aug. 25, 2014 Assistant Examiner — Warren H Kilpatrick (65) Prior Publication Data (74) Attorney, Agent, or Firm — Heslin Rothenberg Farley & Mesiti P.C.; Kristian E. Ziegler US 2016/OO56231 A1 Feb. 25, 2016 (57) ABSTRACT (51) Int. Cl. Semiconductor devices and fabrication methods thereof are HOIL 29/06 (2006.01) provided. The semiconductor devices include: a substrate, HOIL 29/66 (2006.01) the Substrate including a p-type well adjoining an n-type HOIL 29/735 (2006.01) well; a first p-type region and a first n-type region disposed HOIL 29/47 (2006.01) within the n-type well of the substrate, where the first p-type HOIL 29/423 (2006.01) region at least partially encircles the first n-type region; and HOIL 29/08 (2006.01) a second p-type region and a second n-type region disposed HOIL 29/10 (2006.01) in the p-type well of the substrate, where the second n-type (52) U.S. Cl. region at least partially encircles the second p-type region. CPC ....... HOIL 29/0619 (2013.01); HOIL 29/0692 In one embodiment, the first p-type region fully encircles the (2013.01); HOIL 29/0821 (2013.01); HOIL first n-type region and the second n-type region fully 29/1008 (2013.01); HOIL 29/41708 (2013.01); encircles the second p-type region. In another embodiment, HOIL 29/42304 (2013.01); HOIL 29/6625 the semiconductor device may be a bipolar junction tran (2013.01); HOIL 29/735 (2013.01) sistor or a rectifier. (58) Field of Classification Search CPC ................................................... HO1L 29/0619 19 Claims, 5 Drawing Sheets COLLECTOR N-1 U.S. Patent Jan. 10, 2017 Sheet 1 of 5 US 9,543,378 B2 110 111 112 120 121 122 FIG. 1B U.S. Patent Jan. 10, 2017 Sheet 2 of 5 U.S. Patent Jan. 10, 2017 Sheet 3 of 5 US 9,543,378 B2 FIG. 1E 111 122 COLLECTOR COLLECTOR N-1 Nu1 102 FIG. 1F U.S. Patent Jan. 10, 2017 Sheet 4 of 5 US 9,543,378 B2 100 110 112 120 122 121 102 130 FIG. 1G 111 122 COLLECTOR COLLECTOR 102 FIG. 1H U.S. Patent Jan. 10, 2017 Sheet S of 5 US 9,543,378 B2 1OO 110 112 120 122 1-1 102 SECTION 1 3 O FIG. 1 111 122 FOURTH SECTION SECTION SECTION SECUON SECT9. SECUON 102 FIG. 1U US 9,543,378 B2 1. 2 SEMCONDUCTOR DEVICES AND FIG. 1B is a cross-sectional elevational view of the FABRICATION METHODS THEREOF structure of FIG. 1A, taken along line 1B-1B thereof, in accordance FIELD OF THE INVENTION with one or more aspects of the present invention; FIG. 1C is an isometric view of another embodiment of a The present invention relates to semiconductor devices structure including a semiconductor device, in accordance and methods of fabricating semiconductor devices. with one or more aspects of the present invention; FIG. 1D is a cross-sectional elevational view of the BACKGROUND OF THE INVENTION structure of 10 FIG. 1C, taken along line 1D-1D thereof, in accordance Modern integrated circuit designs may include a variety with one or more aspects of the present invention; of different semiconductor device types optimized for dif FIG. 1E is a plan view of one embodiment of a bipolar ferent functions. For example, field-effect transistors are junction transistor, in accordance with one or more aspects widely used to provide digital functions, such as logic, of the present invention; 15 FIG.1F is a cross-sectional elevational view of the bipolar memory, or processing. Other types of semiconductor junction transistor of FIG. 1E, taken along line 1F-1F devices, such as bipolar junction transistors and rectifiers, thereof, in accordance with one or more aspects of the are desirable to provide analog functions, such as tempera present invention; ture detection, electrostatic discharge protection, amplifica FIG. 1G is a plan view of one embodiment of a bipolar tion, or radio frequency functions. Therefore, integrated junction transistor, in accordance with one or more aspects circuits combining these different types of semiconductor of the present invention; devices to provide both analog and digital functions are FIG. 1H is a cross-sectional elevational view of the desirable. However, different device architectures of for bipolar junction transistor of FIG. 1G, taken along line example, field-effect transistors and bipolar junction tran 1H-1H thereof, in accordance with one or more aspects of sistors, typically require separate fabrication processes, 25 the present invention; leading to increased complexity and cost. FIG. 1I is a plan view of one embodiment of a semicon ductor controlled rectifier, in accordance with one or more BRIEF SUMMARY aspects of the present invention; and FIG. 1J is a cross-sectional elevational view of the semi The shortcomings of the prior art are overcome, and 30 conductor controlled rectifier of FIG. 1I, taken along line additional advantages are provided, through the provision, in 1J-1J thereof, in accordance with one or more aspects of the one aspect, of a semiconductor device. The semiconductor present invention. device includes: a Substrate, the Substrate including a p-type well adjoining an n-type well; a first p-type region and a first DETAILED DESCRIPTION n-type region disposed within the n-type well of the sub 35 strate, where the first p-type region at least partially encircles Aspects of the present invention and certain features, the first n-type region; and a second p-type region and a advantages, and details thereof, are explained more fully second n-type region disposed in the p-type well of the below with reference to the non-limiting examples illus Substrate, where the second n-type region at least partially trated in the accompanying drawings. Descriptions of well encircles the second p-type region. 40 known materials, fabrication tools, processing techniques, In another aspect, a method is presented. The method etc., are omitted so as not to unnecessarily obscure the includes providing a semiconductor device including a Sub invention in detail. It should be understood, however, that strate, the Substrate including a p-type well adjoining to an the detailed description and the specific examples, while n-type well. The providing includes: fabricating a first indicating aspects of the invention, are given by way of p-type region and a first n-type region disposed within the 45 illustration only, and not by way of limitation. Various n-type well of the Substrate, and a second p-type region and Substitutions, modifications, additions, and/or arrangements, a second n-type region disposed within the p-type well of the within the spirit and/or scope of the underlying inventive Substrate, where the first p-type region at least partially concepts will be apparent to those skilled in the art from this encircles the first n-type region, and the second n-type disclosure. region at least partially encircles the second p-type region. 50 In one implementation, an integrated circuit design may Additional features and advantages are realized through include multiple different device types at different locations the techniques of the present invention. Other embodiments to perform different functions. During integrated circuit and and aspects of the invention are described in detail herein semiconductor fabrication processing, millions, billions or and are considered a part of the claimed invention. more devices of these devices, such as transistors, capaci 55 tors, rectifiers, and resistors, may be formed to enable logic BRIEF DESCRIPTION OF THE SEVERAL circuits, memory storage elements, or analog components. VIEWS OF THE DRAWINGS The semiconductor fabrication process is very complex, and techniques that tend to reduce complexity can improve yield One or more aspects of the present invention are particu and reduce costs. Cost reductions may be achieved by, for larly pointed out and distinctly claimed as examples in the 60 example, the elimination or consolidation of process steps, claims at the conclusion of the specification. The foregoing or the simplification of designs. and other objects, features, and advantages of the invention For example, as described herein, several advantages may are apparent from the following detailed description taken in be realized by defining a single universal device design that conjunction with the accompanying drawings in which: may be adapted to act as multiple different device types, FIG. 1A is a plan view of one embodiment of a structure 65 leading to reduced design and maintenance costs. For including a semiconductor device, in accordance with one or instance, a universal design layout for multiple semiconduc more aspects of the present invention; tor devices may be developed to enable multiple different US 9,543,378 B2 3 4 devices.
Load more

Recommended publications
  • Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres
    MEASUREMENT AND APPLICATION OF OPTICAL NONLINEARITIES IN INDIUM PHOSPHIDE, CADMIUM MERCURY TELLERIDE AND PHOTONIC CRYSTAL FIBRES Trefor James Sloanes A Thesis Submitted for the Degree of DEng at the University of St. Andrews 2009 Full metadata for this item is available in the St Andrews Digital Research Repository at: https://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/723 This item is protected by original copyright Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres This thesis is presented in application for the degree of Doctor of Engineering to the University of St. Andrews by Trefor James Sloanes I, Trefor James Sloanes, hereby certify that this thesis, which is approximately 28,500 words in length, has been written by me, that it is the record of work carried out by me and that it has not been submitted in any previous application for a higher degree. I was admitted as a research student in October, 2003 and as a candidate for the degree of Doctor of Engineering in August, 2004; the higher study for which this is a record was carried out in the University of St Andrews between 2003 and 2008. date ……………… signature of candidate ……………… I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of Doctor of Engineering in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree.
    [Show full text]
  • Vertically Aligned Arrays of Insb Nanostructures for Tuning Light Absorption in the Mid-Infrared
    Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared The Harvard community has made this article openly available. Please share how this access benefits you. Your story matters Citable link http://nrs.harvard.edu/urn-3:HUL.InstRepos:37799758 Terms of Use This article was downloaded from Harvard University’s DASH repository, and is made available under the terms and conditions applicable to Other Posted Material, as set forth at http:// nrs.harvard.edu/urn-3:HUL.InstRepos:dash.current.terms-of- use#LAA Vertically Aligned Arrays of InSb Nanostructures for Tuning Light Absorption in the Mid-Infrared Nicholas Collins A Thesis in the Field of Bioengineering and Nanotechnology for the Degree of Master of Liberal Arts Harvard University March 2018 Copyright 2017 Nicholas Collins Abstract Infrared detection is valuable across a diverse range of fields. Military applications have long been the focus of development of infrared detection technology, but as accessibility to infrared detectors grows, industries ranging from waste management to medicine have shown broad uses for the technology. Imaging of biological samples is particularly well suited for near and mid infrared imaging as opaque superficial layers often inhibit the use of visible light to detect underlying structures which may hold diagnostic value. Infrared detecting devices are typically underutilized in a biomedical setting despite there being many potential applications. The primary objective of this research was to provide a proof of concept for a novel transmission filters system in the near and mid infrared range using vertically oriented indium antimonide (InSb) nanostructures. This was achieved by conducting optical simulations of InSb nanowires, developing an ICP-RIE etching process suitable for InSb, and, lastly, by measuring specular reflectance of the InSb nanostructure arrays using FT-IR microscopy.
    [Show full text]
  • United States Patent (19) (11) 4,237,471 Pommerrenig 45) Dec
    United States Patent (19) (11) 4,237,471 Pommerrenig 45) Dec. 2, 1980 54 METHOD OF PRODUCING A 58) Field of Search ........................ 357/30, 16, 61, 63 SEMCONDUCTORPHOTODODE OF NDUM ANTMONDE AND DEVICE 56 References Cited THEREOF U.S. PATENT DOCUMENTS 75 Inventor: Dieter H. Pommerrenig, Burke, Va. 3,558,373 1/1971 Moody ................................. 148/171 73 Assignees: Hamamatsu Corporation, Middlesex, Primary Examiner-Martin H. Edlow N.J.; Hamamatsu TV Co., Ltd., Attorney, Agent, or Firm-Moonray Kojima Hamamatsu, Japan 57 ABSTRACT (21 Appl. No.: 51,245 A method of producing semiconductor photodiodes of indium antimonide, by growing an indium antimonide 22 Filed: Jun. 22, 1979 epitaxial layer of one type conductivity onto a substrate of indium antimonide of another type conductivity, Related U.S. Application Data utilizing conventional vapor phase or liquid phase epi 60 Continuation of Ser. No. 879,640, Feb. 21, 1978, aban taxial techniques, wherein the antimony in the epitaxial doned, which is a division of Ser. No. 739,659, Nov. 8, layer is partially replaced by either arsenic or phospho 1976, abandoned. rus, thus resulting in a high performing photoelectric 51 Int. Cl’............................................. H01L 27/14 device. 52 U.S.C. ........................................ 357/30; 357/16; 357/61 6 Claims, 16 Drawing Figures U.S. Patent Dec. 2, 1980 Sheet 1 of 2 4,237,471 A.27, 7 W/W 727.4c /////////////////// XXXXXXXXXXXXXXXXXXXXXXXX A27.4eXXYYXXYYXXXX U.S. Patent Dec. 2, 1980 Sheet 2 of 2 4,237,471 77.5A O 27 PZZZZZZZZZZZZZZZZZZZZ-53 " V ZZZZZZZZZZZZZZZZZZZZZZZ \ \ 22222XXXXXXXXXXXV N Ny.V 4,237,471 2 thereby, and wherein an indium antimonide epitaxial METHOD OF PRODUCING ASEMECONDUCTOR layer of one type conductivity is epitaxially grown onto PHOTODODE OF NEDUMANTMONDE AND an indium antimonide substrate of another type conduc DEVICE THEREOF tivity, with the antimony in the epitaxial layer partially replaced with arsenic or phosphorus, Photodiodes and This is a continuation of application Ser.
    [Show full text]
  • Indium Phosphide 22398-80-7
    Indium Phosphide 22398-80-7 DRAFT REPORT SUPPORT FOR CHEMICAL NOMINATION AND SELECTION PROCESS OF THE NATIONAL TOXICOLOGY PROGRAM NIEHS CONTRACT NO. NO1-ES-85218 EXECUTIVE SUMMARY OF DATA INDIUM PHOSPHIDE (22398-80-7) November 7, 1988 Submitted to: National Toxicology Program National Institutes of Health Building 31, Room 2B-55 Bethesda, Maryland 20205 Submitted by: Chemical Hazard Assessment Division Syracuse Research Corporation Merrill Lane Syracuse, New York 13210 Overview for Indium Phosphide Nomination History: Indium phosphide was nominated to the NTP for toxicity and carcinogenicity testing by NIEHS based on its use in the electronics industry, its potential acute toxicity, and lack of toxicity data. Physical and Chemical Properties: Brittle, metallic mass with a melting point of 1070oC. No information was found on its solubility in water or organic solvents. It is slightly soluble in mineral acids. Production, Uses, and Exposure: The TSCA Inventory reported three companies as domestic producers of indium phosphide in 1977. One of these reported less than 1,000 pounds; the other two did not report production. No other information on the domestic production or importation of indium phosphide was available. Indium phosphide is used in semiconductor devices, injector lasers, and solar cells. It has been proposed to replace silicon in microchips. Indium phosphide is not listed in the NOES data base. The ACGIH has not recommended a TLV for indium phosphide but has recommended a TLV of 0.1 mg/m3 for indium and its compounds. Regulatory Status: No information was found on the regulatory status of indium phosphide. Toxicological data: Human - No information on toxicological effects in humans was found.
    [Show full text]
  • Environmental Protection Agency § 712.30
    Environmental Protection Agency § 712.30 (2) As a non-isolated intermediate. ment Information Manufacturer’s Re- (3) As an impurity. port for each chemical substance or [47 FR 26998, June 22, 1982; 47 FR 28382, June mixture that is listed or designated in 30, 1982] this section. (2) Unless a respondent has already § 712.28 Form and instructions. prepared a Manufacturer’s Report in (a) Manufacturers and importers sub- conformity with conditions set forth in ject to this subpart must submit a sin- paragraph (a)(3) of this section, the in- gle EPA Form No. 7710–35, ‘‘Manufac- formation in each Manufacturer’s Re- turer’s Report—Preliminary Assess- port must cover the respondent’s latest ment Information,’’ for each plant site complete corporate fiscal year as of the manufacturing or importing a chem- effective date. The effective date will ical substance listed in § 712.30. be 30 days after the FEDERAL REGISTER (b) Reporting companies may submit publishes a rule amendment making their reports through individual plant the substance or mixture subject to sites or company headquarters as they this subpart B. choose. A separate form must be sub- (3) Persons subject to this subpart B mitted for each plant site manufac- need not comply with the requirements turing the chemical substance. of paragraph (a)(2) of this section if (c) You must submit forms by one of they meet either one of the following the following methods: conditions: (1) Mail, preferably certified, to the (i) The respondent has previously and Document Control Office (DCO) voluntarily provided EPA with a Manu- (7407M), Office of Pollution Prevention facturer’s Report on a chemical sub- and Toxics (OPPT), Environmental stance or mixture subject to this sub- Protection Agency, 1200 Pennsylvania part B, which contains data for a one- Ave., NW., Washington, DC 20460–0001, year period ending no more than three ATTN: 8(a) PAIR Reporting.
    [Show full text]
  • Room-Temperature Indium Antimonide Mid-Infrared Photodiode Potential Applications Include Human Body Detection for Power Savings
    72 Technology focus: Photodetectors Room-temperature indium antimonide mid-infrared photodiode Potential applications include human body detection for power savings. sahi Kasei Microdevices Corporation and Kyushu University in Japan have developed room-tem- Aperature mid-infrared semiconductor detectors based on indium antimonide (InSb) [Koichiro Ueno et al, Jpn. J. Appl. Phys., vol52, p092202, 2013]. The researchers believe such devices could be used to save power in facilities where no people are present through the detection or not of human body heat. The human body gives out detectable thermal radia- tion in the range 3–25µm, peaking around 10µm (essentially a Planck blackbody distribution for 36–37°C). The Asahi Kasei/Kyushu device covers the 2–7µm range. Present methods of detecting humans tend to depend on measuring temperature changes (e.g. pyroelectric devices), so if the people are stationary a false signal to turn off power could be sent. However, mid-infrared semiconductor detectors usually need cooling to operate. To enable room-temperature operation, the researchers worked to reduce the non radiation part of the current (‘the diffusion current’) of the device by increasing the resistance under zero bias (R0). The device also featured improved IR incidence efficiency by gathering radiation through the gallium arsenide (GaAs) substrate rather than through InSb layers. In addition, the GaAs surface was roughened to reduce reflection. The indium antimonide (InSb) photodiode structure (Figure 1b) was grown on a semi-insulating (001) GaAs substrate using Riber MBE-49 molecular beam epitaxy system. The substrate temperature during growth was 410°C. The group V (Sb) to group III (In) flux ratio was 2:1.
    [Show full text]
  • Advances of Sensitive Infrared Detectors with Hgte Colloidal Quantum Dots
    coatings Review Advances of Sensitive Infrared Detectors with HgTe Colloidal Quantum Dots Shuo Zhang, Yao Hu and Qun Hao * Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China; [email protected] (S.Z.); [email protected] (Y.H.) * Correspondence: [email protected] Received: 8 July 2020; Accepted: 30 July 2020; Published: 4 August 2020 Abstract: The application of infrared detectors based on epitaxially grown semiconductors such as HgCdTe, InSb and InGaAs is limited by their high cost and difficulty in raising operating temperature. The development of infrared detectors depends on cheaper materials with high carrier mobility, tunable spectral response and compatibility with large-scale semiconductor processes. In recent years, the appearance of mercury telluride colloidal quantum dots (HgTe CQDs) provided a new choice for infrared detection and had attracted wide attention due to their excellent optical properties, solubility processability, mechanical flexibility and size-tunable absorption features. In this review, we summarized the recent progress of HgTe CQDs based infrared detectors, including synthesis, device physics, photodetection mechanism, multi-spectral imaging and focal plane array (FPA). Keywords: HgTe Colloidal quantum dots; infrared; photoconductors; photovoltaic; multispectral imaging 1. Introduction Infrared detectors are widely used in thermal imaging [1,2], material spectroscopy analysis [3–5], autonomous driving assistants [6], surveillance [7] and biological health monitoring [8–10]. Before 1940s, the dominant infrared detectors were thermal detector, such as thermocouple detector [11], bolometer [12] and pyroelectric detector [13], which mainly relied on the detection of incident power rather than the energy of the incoming photons.
    [Show full text]
  • Optical Characteristics of Dilute Nitride of Insb Bulk Crystal
    International Journal of Scientific and Research Publications, Volume 4, Issue 4, April 2014 1 ISSN 2250-3153 Optical Characteristics of Dilute Nitride of InSb Bulk Crystal Manisha Joshi Deshpande1, Dilip Maske2, BrijMohan Arora3, Dattatray Gadkari4 1 Jai Hind College, Churchgate, Mumbai, Mithibai College, Vile Parle (W), Mumbai, India 2 Ruparel College, Mahim, Mumbai, India, Mithibai College, Vile Parle (W), Mumbai, India 3 I. I. T. B. Mumbai, India 4 Mithbai College, Vile Parle (W), Mumbai, India Abstract- Addition of highly electronegative Nitrogen to for such as in VDS technique continuous flow of nitrogen or Indium Antimonide substantially reduces its band gap. presence of nitrogen plasma [3] is not required. Using this Theoretically, it is expected that one percent of nitrogen should method three bulk crystals of dilute nitride Indium Antimonide reduce the band gap by about 100meV. Thus by reduction in the are grown with nitrogen atomic percentage of 0.1% and 0.2% bandgap, the resulting material will be suitable for ‘far infrared’ and 0.5% respectively. detection. Three bulk crystals of InSb:N were grown by vertical directional solidification technique. The grown ingots were found detached from the ampoule wall. The physical properties and II. MATERIALS AND METHODS microstructures are studied. The smooth appearance of the Three ingots of dilute nitride of Indium antimonide with crystal, uniform diameter across the length and other studies percentage of nitrogen as 0.1%, 0.2% and 0.5% are grown by confirm the excellent quality of the crystal. Wavelength VDS technique. The VDS system consists of a vertical single dispersive spectroscopy (WDS) was carried out for zone furnace.
    [Show full text]
  • Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication Steven Paul Minor University of Arkansas, Fayetteville
    University of Arkansas, Fayetteville ScholarWorks@UARK Theses and Dissertations 5-2012 Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication Steven Paul Minor University of Arkansas, Fayetteville Follow this and additional works at: http://scholarworks.uark.edu/etd Part of the Nanotechnology Fabrication Commons, and the Semiconductor and Optical Materials Commons Recommended Citation Minor, Steven Paul, "Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication" (2012). Theses and Dissertations. 267. http://scholarworks.uark.edu/etd/267 This Thesis is brought to you for free and open access by ScholarWorks@UARK. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of ScholarWorks@UARK. For more information, please contact [email protected]. Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication Plasma-Assisted Molecular Beam Epitaxial Growth of Indium Nitride for Future Device Fabrication A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Microelectronics-Photonics By Steven P. Minor Arkansas State University Bachelor of Science in Engineering, 2008 May 2012 University of Arkansas Abstract The need for energy conservation has heightened the search for new materials that can reduce energy consumption or produce energy by the means of photovoltaic cells. III-nitride alloys show promise for these applications due to their generally good transport properties and ability to withstand high power applications. Along with these, this family of semiconductor alloys has a direct bandgap energy range (0.7-6.2 eV) which spans the entire visible spectrum and encompasses a large portion of the available solar spectrum.
    [Show full text]
  • Indium Antimonide Photovoltaic Cells for Near-Field Thermophotovoltaics
    Indium antimonide photovoltaic cells for near-field thermophotovoltaics Dilek Cakiroglu, Jean-Philippe Perez, Axel Evirgen, Christophe Lucchesi, Pierre-Olivier Chapuis, Thierry Taliercio, Eric Tournié, Rodolphe Vaillon To cite this version: Dilek Cakiroglu, Jean-Philippe Perez, Axel Evirgen, Christophe Lucchesi, Pierre-Olivier Chapuis, et al.. Indium antimonide photovoltaic cells for near-field thermophotovoltaics. Solar Energy Materials and Solar Cells, Elsevier, 2019, 203, pp.110190. 10.1016/j.solmat.2019.110190. hal-02303848 HAL Id: hal-02303848 https://hal.archives-ouvertes.fr/hal-02303848 Submitted on 2 Oct 2019 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. Indium antimonide photovoltaic cells for near-field thermophotovoltaics Dilek Cakiroglu1, Jean-Philippe Perez1, Axel Evirgen1,*, Christophe Lucchesi2, Pierre-Olivier Chapuis2, Thierry Taliercio1, Eric Tournié1, Rodolphe Vaillon1,2 1IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France 2Univ Lyon, CNRS, INSA-Lyon, Université Claude Bernard Lyon 1, CETHIL UMR5008, F-69621, Villeurbanne, France * Current address: III-V Lab, Thales Research and Technology, Route départementale 128, 91767 Palaiseau, France Abstract – Indium antimonide photovoltaic cells are specifically designed and fabricated for use in a near-field thermophotovoltaic device demonstrator. The optimum conditions for growing the p-n junction stack of the cell by means of solid-source molecular beam epitaxy are investigated.
    [Show full text]
  • (12) United States Patent (10) Patent No.: US 7,166,734 B2 Shenai-Khatkhate Et Al
    USOO7166734B2 (12) United States Patent (10) Patent No.: US 7,166,734 B2 Shenai-Khatkhate et al. (45) Date of Patent: Jan. 23, 2007 (54) METHOD FOR MAKING 3,808.207 A 4/1974 Shepherd et al. ........... 260/247 ORGANOMETALLC COMPOUNDS 4,364,872 A 12, 1982 Diefenbach ............. 260,448 A 4,364,873. A 12/1982 Difenbach . ... 260/448 A (75) Inventors: Deodatta Vinayak Shenai-Khatkhate, i.e. A t NG et al. O's...b wk 4 C. a. - - - RNA W. East S 4,841,082. A 6/1989 Eidt et al. ......... ... 556,129 mamchyan, Wakefield, MA (US) 4,847,399 A 7/1989 Hallock et al. ................ 556.1 5,350,869 A 9/1994 Kanjolia et al. ............... 556.1 (73) Assignee: Rohm and Haas Electronic Materials 5,473,090 A 12, 1995 Smit et al. ..................... 556.1 LLC, Marlborough, MA (US) 5,543,537 A 8/1996 Eisenberg et al. ... 556,157 - 0 5,663,390 A 9, 1997 Giolando ....................... 556.1 (*) Notice: Subject to any disclaimer, the term of this 5,756,786 A 5/1998 Power et al. .. ... 556.1 patent is extended or adjusted under 35 5,817.847. A 10, 1998 Giolando ....................... 556.1 U.S.C. 154(b) by 0 days. 6,660,874 B2 12/2003 Shenai-Khatkhate et al. .. 556/70 6,680,397 B2 1/2004 Shenai-Khatkhate et al. .. 556/1 (21) Appl. No.: 11/219,227 6,770,769 B2 8, 2004 Shenai-Khatkhate et al. .. 556/1 2004/O198042 A1 10, 2004 Shanai-Khatkhate (22) Filed: Sep.
    [Show full text]
  • Study of Annealing Effects in In–Sb Bilayer Thin Films
    Bull. Mater. Sci., Vol. 30, No. 2, April 2007, pp. 117–121. © Indian Academy of Sciences. Study of annealing effects in In–Sb bilayer thin films R K MANGAL† and Y K VIJAY* Department of Physics, University of Rajasthan, Jaipur 302 004, India †Jaipur Engineering College and Research Centre, Jaipur 303 905, India MS received 16 November 2006 Abstract. The thin films of In–Sb having different thicknesses of antimony keeping constant thickness of indium was deposited by thermal evaporation method on ITO coated conducting glass substrates at room tempera- ture and a pressure of 10–5 torr. The samples were annealed for 1 h at 433 K at a pressure of 10–5 torr. The optical transmission spectra of as deposited and annealed films have been carried out at room temperature. The variation in optical band gap with thickness was also observed. Rutherford back scattering and X-ray diffraction analysis confirms mixing of bilayer system. The transverse I–V characteristic shows mixing effect after annealing at 433 K for 1 h. This study confirms mixing of bilayer structure of semiconductor thin films. Keywords. InSb; thin films; transmission; band gap; RBS; I–V characteristics; XRD. 1. Introduction 2. Experimental Indium antimonide (InSb) is one of the most widely studied 2.1 Sample preparation III–V group compound semiconductors. It is an important material in the field of infrared detectors in the 3–5 μm ⋅ wavelength range due to its high electron hole mobility The high purity indium (99 99%) powder and pure antimony ⋅ and low energy gap at room temperature (Chen et al 1992).
    [Show full text]