List of semiconductor materials - Wikipedia, the free encyclopedia Page 1 of 4
List of semiconductor materials
From Wikipedia, the free encyclopedia
Semiconductor materials are insulators at absolute zero temperature that conduct electricity in a limited way at room temperature. The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way.
Because of their application in devices like transistors (and therefore computers) and lasers, the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science.
The most commonly used semiconductor materials are crystalline inorganic solids. These materials can be classified according to the periodic table groups from which their constituent atoms come.
Semiconductor materials are differing by their properties. Compound semiconductors have advantages and disadvantages in comparison with silicon. For example gallium arsenide has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows operation of power devices at higher temperatures, and gives lower thermal noise to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary compositions, with adjustable band gap width, allowing light emission at chosen wavelengths, and allowing e.g. matching to wavelengths with lowest losses in optical fibers. GaAs can be also grown in a semiinsulating form, which is suitable as a lattice-matching insulating substrate for GaAs devices. Conversely, silicon is robust, cheap, and easy to process, while GaAs is brittle, expensive, and insulation layers can not be created by just growing an oxide layer; GaAs is therefore used only where silicon is not sufficient.[1]
Some materials can be prepared with tunable properties, e.g. band gap or lattice constant, by alloying multiple compound semiconductors, resulting in ternary, quaternary, or even quinary compositions.
List of semiconductor materials Contents
1 Group IV 2 Group III-V 3 Group II-VI 4 Group I-VII 5 Group IV-VI 6 Group V-VI 7 Group II-V 8 Oxides 9 Layered semiconductors 10 Magnetic semiconductors 11 Others 12 See also 13 References
Group IV
Group IV elemental semiconductors Diamond (C) (5.47 eV) Silicon (Si) (1.11 eV, indirect band gap, most common semiconductor, easy to fabricate) Germanium (Ge) (0.67 eV, indirect band gap)
Group IV compound semiconductors Silicon carbide (SiC) 3C-SiC (2.3 eV) 4H-SiC (3.3 eV) 6H-SiC (3.0 eV)
Silicon-germanium (SiGe) (0.67-1.11 eV) Group III-V
Crystallizing with high degree of stoichiometry, most can be obtained as both n-type and p-type. Many have high carrier mobilities and direct energy gaps, making them useful for optoelectronics.
III-V semiconductors (See also: Template:III-V compounds) Aluminium antimonide (AlSb) (1.6 eV) Aluminium arsenide (AlAs) (2.16 eV, indirect band gap) Aluminium nitride (AlN) (6.28 eV, direct band gap) Aluminium phosphide (AlP) (2.45 eV) Boron nitride (BN) Boron phosphide (BP) Boron arsenide (BAs) (1.5 eV, indirect band gap) Gallium antimonide (GaSb) (0.7 eV) Gallium arsenide (GaAs) (1.43 eV, direct band gap, second most common in use, commonly used as substrate) Gallium nitride (GaN) (3.44 eV, direct band gap) Gallium phosphide (GaP) (2.26 eV, indirect band gap) Indium antimonide (InSb) (0.17 eV, direct band gap) Indium arsenide (InAs) (0.36 eV, direct band gap) Indium nitride (InN) (0.7 eV) Indium phosphide (InP) (1.35 eV, direct band gap, commonly used as substrate)
III-V ternary semiconductor alloys Aluminium gallium arsenide (AlGaAs, AlxGa1-xAs) (1.42-2.16 eV, direct band gap for x<0.4) Indium gallium arsenide (InGaAs, InxGa1-xAs)
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Indium gallium phosphide (InGaP) Aluminium indium arsenide (AlInAs) Aluminium indium antimonide (AlInSb) Gallium arsenide nitride (GaAsN) Gallium arsenide phosphide (GaAsP) Aluminium gallium nitride (AlGaN) Aluminium gallium phosphide (AlGaP) Indium gallium nitride (InGaN, direct band gap) Indium arsenide antimonide (InAsSb) Indium gallium antimonide (InGaSb)
III-V quaternary semiconductor alloys Aluminium gallium indium phosphide (AlGaInP, also InAlGaP, InGaAlP, AlInGaP) Aluminium gallium arsenide phosphide (AlGaAsP) Indium gallium arsenide phosphide (InGaAsP) Aluminium indium arsenide phosphide (AlInAsP) Aluminium gallium arsenide nitride (AlGaAsN) Indium gallium arsenide nitride (InGaAsN) Indium aluminium arsenide nitride (InAlAsN) Gallium arsenide antimonide nitride (GaAsSbN)
III-V quinary semiconductor alloys Gallium indium nitride arsenide antimonide (GaInNAsSb) Gallium indium arsenide antimonide phosphide (GaInAsSbP) Group II-VI
Usually p-type, except ZnTe which is n-type
II-VI semiconductors Cadmium selenide (CdSe) (1.74 eV, direct band gap) Cadmium sulfide (CdS) (2.42 eV, direct band gap, common for quantum dots) Cadmium telluride (CdTe) (1.49 eV) Zinc oxide (ZnO) (3.37 eV, direct band gap) Zinc selenide (ZnSe) (2.7 eV) Zinc sulfide (ZnS) (3.68 eV) Zinc telluride (ZnTe) (2.25 eV)
II-VI ternary alloy semiconductors Cadmium zinc telluride (CdZnTe, CZT) (1.4-2.2 eV, direct band gap) Mercury cadmium telluride (HgCdTe) Mercury zinc telluride (HgZnTe) Mercury zinc selenide (HgZnSe) Group I-VII
I-VII semiconductors Cuprous chloride (CuCl) Group IV-VI
IV-VI semiconductors Lead selenide (PbSe) (0.27 eV, direct band gap) Lead(II) sulfide (PbS) (0.37 eV; mineral galena, first semiconductor in practical use, used in cat's whisker detectors) Lead telluride (PbTe) (0.29 eV) Tin sulfide (SnS) Tin telluride (SnTe)
IV-VI ternary semiconductors lead tin telluride (PbSnTe) Thallium tin telluride (Tl2SnTe5) Thallium germanium telluride (Tl2GeTe5) Group V-VI
V-VI semiconductors Bismuth telluride (Bi2Te3) Group II-V
II-V semiconductors Cadmium phosphide (Cd3P2) Cadmium arsenide (Cd3As2) Cadmium antimonide (Cd3Sb2) Zinc phosphide (Zn3P2) Zinc arsenide (Zn3As2) Zinc antimonide (Zn3Sb2)
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Oxides
Titanium dioxide (TiO2) anatase (3.2 eV, photocatalytic) rutile (3.02 eV, photocatalytic) [2] brookite (2.96 eV)
Copper(I) oxide (Cu2O) (2.1 eV) Copper(II) oxide (CuO) (1.2 eV) Uranium dioxide (UO2) Uranium trioxide (UO3) Bismuth trioxide (Bi2O3) Zinc oxide (ZnO) (3.37 eV, direct band gap, photocatalytic) Tin dioxide (SnO2) (3.7 eV) Barium titanate (BaTiO3) (3 eV) Strontium titanate (SrTiO3) (3.3 eV) Lithium niobate (LiNbO3) (4 eV) Lanthanum copper oxide (La2CuO4) (2 eV, superconductive when doped with barium or strontium) Layered semiconductors
Lead(II) iodide (PbI2) Molybdenum disulfide (MoS2) Gallium selenide (GaSe) Tin sulfide (SnS) Bismuth sulfide (Bi2S3) Magnetic semiconductors
[3] Diluted magnetic semiconductors (DMS) Gallium manganese arsenide (GaMnAs) Indium manganese arsenide (InMnAs) Cadmium manganese telluride (CdMnTe) Lead manganese telluride (PbMnTe)
Lanthanum calcium manganate (La0.7Ca0.3MnO3) (colossal magnetoresistance) Iron(II) oxide (FeO) (antiferromagnetic) Nickel(II) oxide (NiO) (antiferromagnetic) Europium(II) oxide (EuO) (ferromagnetic) Europium(II) sulfide (EuS) (ferromagnetic) Chromium(III) bromide (CrBr3) Others
Copper indium gallium selenide (CIGS) (direct band gap, solar cells) Copper indium selenide (CuInSe2) Silver gallium sulfide (AgGaS2) (nonlinear optical properties) Zinc silicon phosphide (ZnSiP2) Arsenic selenide (As2S3) (semiconductive in both crystalline and glassy state) Platinum silicide (PtSi) Bismuth(III) iodide (BiI3) Mercury(II) iodide (HgI2) Thallium(I) bromide (TlBr) Selenium (Se) (1.74 eV, used in selenium rectifiers) Iron disulfide (FeS2) (0.95 eV, used in later cat's whisker detectors, investigated for solar cells)
Organic semiconductors See also
Heterojunction References
1. ^ http://books.google.com/books? id=gxSyMjosCwcC&pg=PA310&dq=semiconductor+failure+microphotograph&lr=&as_drrb_is=q&as_minm_is=0&as_miny_is=&as_maxm_is=0&as_maxy_is=&num 2. ^ www.ias.ac.in/currsci/may252006/1378.pdf 3. ^ http://books.google.com/books?id=6FAbQCiaNPEC&pg=PA153&dq=%22MAGNETIC+SEMICONDUCTORS% 22&lr=&as_drrb_is=q&as_minm_is=0&as_miny_is=&as_maxm_is=0&as_maxy_is=&num=50&as_brr=3&cd=3#v=onepage&q=%22MAGNETIC% 20SEMICONDUCTORS%22&f=false Retrieved from "http://en.wikipedia.org/wiki/List_of_semiconductor_materials" Categories: Semiconductor materials
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