DOCSLIB.ORG

List of Semiconductor Materials - Wikipedia, the Free Encyclopedia Page 1 of 4

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
List of Semiconductor Materials - Wikipedia, the Free Encyclopedia Page 1 of 4 List of semiconductor materials - Wikipedia, the free encyclopedia Page 1 of 4 List of semiconductor materials From Wikipedia, the free encyclopedia Semiconductor materials are insulators at absolute zero temperature that conduct electricity in a limited way at room temperature. The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way. Because of their application in devices like transistors (and therefore computers) and lasers, the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. The most commonly used semiconductor materials are crystalline inorganic solids. These materials can be classified according to the periodic table groups from which their constituent atoms come. Semiconductor materials are differing by their properties. Compound semiconductors have advantages and disadvantages in comparison with silicon. For example gallium arsenide has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows operation of power devices at higher temperatures, and gives lower thermal noise to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary compositions, with adjustable band gap width, allowing light emission at chosen wavelengths, and allowing e.g. matching to wavelengths with lowest losses in optical fibers. GaAs can be also grown in a semiinsulating form, which is suitable as a lattice-matching insulating substrate for GaAs devices. Conversely, silicon is robust, cheap, and easy to process, while GaAs is brittle, expensive, and insulation layers can not be created by just growing an oxide layer; GaAs is therefore used only where silicon is not sufficient.[1] Some materials can be prepared with tunable properties, e.g. band gap or lattice constant, by alloying multiple compound semiconductors, resulting in ternary, quaternary, or even quinary compositions. List of semiconductor materials Contents 1 Group IV 2 Group III-V 3 Group II-VI 4 Group I-VII 5 Group IV-VI 6 Group V-VI 7 Group II-V 8 Oxides 9 Layered semiconductors 10 Magnetic semiconductors 11 Others 12 See also 13 References Group IV Group IV elemental semiconductors Diamond (C) (5.47 eV) Silicon (Si) (1.11 eV, indirect band gap, most common semiconductor, easy to fabricate) Germanium (Ge) (0.67 eV, indirect band gap) Group IV compound semiconductors Silicon carbide (SiC) 3C-SiC (2.3 eV) 4H-SiC (3.3 eV) 6H-SiC (3.0 eV) Silicon-germanium (SiGe) (0.67-1.11 eV) Group III-V Crystallizing with high degree of stoichiometry, most can be obtained as both n-type and p-type. Many have high carrier mobilities and direct energy gaps, making them useful for optoelectronics. III-V semiconductors (See also: Template:III-V compounds) Aluminium antimonide (AlSb) (1.6 eV) Aluminium arsenide (AlAs) (2.16 eV, indirect band gap) Aluminium nitride (AlN) (6.28 eV, direct band gap) Aluminium phosphide (AlP) (2.45 eV) Boron nitride (BN) Boron phosphide (BP) Boron arsenide (BAs) (1.5 eV, indirect band gap) Gallium antimonide (GaSb) (0.7 eV) Gallium arsenide (GaAs) (1.43 eV, direct band gap, second most common in use, commonly used as substrate) Gallium nitride (GaN) (3.44 eV, direct band gap) Gallium phosphide (GaP) (2.26 eV, indirect band gap) Indium antimonide (InSb) (0.17 eV, direct band gap) Indium arsenide (InAs) (0.36 eV, direct band gap) Indium nitride (InN) (0.7 eV) Indium phosphide (InP) (1.35 eV, direct band gap, commonly used as substrate) III-V ternary semiconductor alloys Aluminium gallium arsenide (AlGaAs, AlxGa1-xAs) (1.42-2.16 eV, direct band gap for x<0.4) Indium gallium arsenide (InGaAs, InxGa1-xAs) http://en.wikipedia.org/wiki/List_of_semiconductor_materials 4/11/2010 List of semiconductor materials - Wikipedia, the free encyclopedia Page 2 of 4 Indium gallium phosphide (InGaP) Aluminium indium arsenide (AlInAs) Aluminium indium antimonide (AlInSb) Gallium arsenide nitride (GaAsN) Gallium arsenide phosphide (GaAsP) Aluminium gallium nitride (AlGaN) Aluminium gallium phosphide (AlGaP) Indium gallium nitride (InGaN, direct band gap) Indium arsenide antimonide (InAsSb) Indium gallium antimonide (InGaSb) III-V quaternary semiconductor alloys Aluminium gallium indium phosphide (AlGaInP, also InAlGaP, InGaAlP, AlInGaP) Aluminium gallium arsenide phosphide (AlGaAsP) Indium gallium arsenide phosphide (InGaAsP) Aluminium indium arsenide phosphide (AlInAsP) Aluminium gallium arsenide nitride (AlGaAsN) Indium gallium arsenide nitride (InGaAsN) Indium aluminium arsenide nitride (InAlAsN) Gallium arsenide antimonide nitride (GaAsSbN) III-V quinary semiconductor alloys Gallium indium nitride arsenide antimonide (GaInNAsSb) Gallium indium arsenide antimonide phosphide (GaInAsSbP) Group II-VI Usually p-type, except ZnTe which is n-type II-VI semiconductors Cadmium selenide (CdSe) (1.74 eV, direct band gap) Cadmium sulfide (CdS) (2.42 eV, direct band gap, common for quantum dots) Cadmium telluride (CdTe) (1.49 eV) Zinc oxide (ZnO) (3.37 eV, direct band gap) Zinc selenide (ZnSe) (2.7 eV) Zinc sulfide (ZnS) (3.68 eV) Zinc telluride (ZnTe) (2.25 eV) II-VI ternary alloy semiconductors Cadmium zinc telluride (CdZnTe, CZT) (1.4-2.2 eV, direct band gap) Mercury cadmium telluride (HgCdTe) Mercury zinc telluride (HgZnTe) Mercury zinc selenide (HgZnSe) Group I-VII I-VII semiconductors Cuprous chloride (CuCl) Group IV-VI IV-VI semiconductors Lead selenide (PbSe) (0.27 eV, direct band gap) Lead(II) sulfide (PbS) (0.37 eV; mineral galena, first semiconductor in practical use, used in cat's whisker detectors) Lead telluride (PbTe) (0.29 eV) Tin sulfide (SnS) Tin telluride (SnTe) IV-VI ternary semiconductors lead tin telluride (PbSnTe) Thallium tin telluride (Tl2SnTe5) Thallium germanium telluride (Tl2GeTe5) Group V-VI V-VI semiconductors Bismuth telluride (Bi2Te3) Group II-V II-V semiconductors Cadmium phosphide (Cd3P2) Cadmium arsenide (Cd3As2) Cadmium antimonide (Cd3Sb2) Zinc phosphide (Zn3P2) Zinc arsenide (Zn3As2) Zinc antimonide (Zn3Sb2) http://en.wikipedia.org/wiki/List_of_semiconductor_materials 4/11/2010 List of semiconductor materials - Wikipedia, the free encyclopedia Page 3 of 4 Oxides Titanium dioxide (TiO2) anatase (3.2 eV, photocatalytic) rutile (3.02 eV, photocatalytic) [2] brookite (2.96 eV) Copper(I) oxide (Cu2O) (2.1 eV) Copper(II) oxide (CuO) (1.2 eV) Uranium dioxide (UO2) Uranium trioxide (UO3) Bismuth trioxide (Bi2O3) Zinc oxide (ZnO) (3.37 eV, direct band gap, photocatalytic) Tin dioxide (SnO2) (3.7 eV) Barium titanate (BaTiO3) (3 eV) Strontium titanate (SrTiO3) (3.3 eV) Lithium niobate (LiNbO3) (4 eV) Lanthanum copper oxide (La2CuO4) (2 eV, superconductive when doped with barium or strontium) Layered semiconductors Lead(II) iodide (PbI2) Molybdenum disulfide (MoS2) Gallium selenide (GaSe) Tin sulfide (SnS) Bismuth sulfide (Bi2S3) Magnetic semiconductors [3] Diluted magnetic semiconductors (DMS) Gallium manganese arsenide (GaMnAs) Indium manganese arsenide (InMnAs) Cadmium manganese telluride (CdMnTe) Lead manganese telluride (PbMnTe) Lanthanum calcium manganate (La0.7Ca0.3MnO3) (colossal magnetoresistance) Iron(II) oxide (FeO) (antiferromagnetic) Nickel(II) oxide (NiO) (antiferromagnetic) Europium(II) oxide (EuO) (ferromagnetic) Europium(II) sulfide (EuS) (ferromagnetic) Chromium(III) bromide (CrBr3) Others Copper indium gallium selenide (CIGS) (direct band gap, solar cells) Copper indium selenide (CuInSe2) Silver gallium sulfide (AgGaS2) (nonlinear optical properties) Zinc silicon phosphide (ZnSiP2) Arsenic selenide (As2S3) (semiconductive in both crystalline and glassy state) Platinum silicide (PtSi) Bismuth(III) iodide (BiI3) Mercury(II) iodide (HgI2) Thallium(I) bromide (TlBr) Selenium (Se) (1.74 eV, used in selenium rectifiers) Iron disulfide (FeS2) (0.95 eV, used in later cat's whisker detectors, investigated for solar cells) Organic semiconductors See also Heterojunction References 1. ^ http://books.google.com/books? id=gxSyMjosCwcC&pg=PA310&dq=semiconductor+failure+microphotograph&lr=&as_drrb_is=q&as_minm_is=0&as_miny_is=&as_maxm_is=0&as_maxy_is=&num 2. ^ www.ias.ac.in/currsci/may252006/1378.pdf 3. ^ http://books.google.com/books?id=6FAbQCiaNPEC&pg=PA153&dq=%22MAGNETIC+SEMICONDUCTORS% 22&lr=&as_drrb_is=q&as_minm_is=0&as_miny_is=&as_maxm_is=0&as_maxy_is=&num=50&as_brr=3&cd=3#v=onepage&q=%22MAGNETIC% 20SEMICONDUCTORS%22&f=false Retrieved from "http://en.wikipedia.org/wiki/List_of_semiconductor_materials" Categories: Semiconductor materials This page was last modified on 29 March 2010 at 17:36. http://en.wikipedia.org/wiki/List_of_semiconductor_materials 4/11/2010 List of semiconductor materials - Wikipedia, the free encyclopedia Page 4 of 4 Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. See Terms of Use for details. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization. http://en.wikipedia.org/wiki/List_of_semiconductor_materials 4/11/2010.
Load more

Recommended publications
  • (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan
    USO09543378B2 (12) United States Patent (10) Patent No.: US 9,543,378 B2 Singh (45) Date of Patent: Jan. 10, 2017 (54) SEMICONDUCTOR DEVICES AND USPC ........................................... 257/25, 347, 402 FABRICATION METHODS THEREOF See application file for complete search history. (71) Applicant: GLOBALFOUNDRIES Inc., Grand (56) References Cited Cayman (KY) U.S. PATENT DOCUMENTS (72) Inventor: Jagar Singh, Clifton Park, NY (US) 4,940,671 A * 7/1990 Small ................ HO1L 21,82285 257 (491 (73) Assignee: GLOBALFOUNDRIES INC., Grand 8,610,241 B1* 12/2013 Hu ...................... HOL 270629 Cayman (KY) 257,353 2004/0095698 A1* 5, 2004 Gerrish ............... HOL27/O255 *) Notice: Subject to anyy disclaimer, the term of this 361 (91.1 patent is extended or adjusted under 35 2004/0253779 A1* 12/2004 Hong ............... HOL 21,8249 U.S.C. 154(b) by 10 days. 438,203 (21) Appl. No.: 14/467,420 * cited by examiner Primary Examiner — Kenneth Parker (22) Filed: Aug. 25, 2014 Assistant Examiner — Warren H Kilpatrick (65) Prior Publication Data (74) Attorney, Agent, or Firm — Heslin Rothenberg Farley & Mesiti P.C.; Kristian E. Ziegler US 2016/OO56231 A1 Feb. 25, 2016 (57) ABSTRACT (51) Int. Cl. Semiconductor devices and fabrication methods thereof are HOIL 29/06 (2006.01) provided. The semiconductor devices include: a substrate, HOIL 29/66 (2006.01) the Substrate including a p-type well adjoining an n-type HOIL 29/735 (2006.01) well; a first p-type region and a first n-type region disposed HOIL 29/47 (2006.01) within the n-type well of the substrate, where the first p-type HOIL 29/423 (2006.01) region at least partially encircles the first n-type region; and HOIL 29/08 (2006.01) a second p-type region and a second n-type region disposed HOIL 29/10 (2006.01) in the p-type well of the substrate, where the second n-type (52) U.S.
    [Show full text]
  • A Guide to Export Controls
    Foreign Affairs, Trade and Affaires étrangères, Commerce et Development Canada Développment Canada A Guide To CANADA’S EXPORT CONTROLS December 2012 Introduction The issuance of export permits is administered by the Export Controls Division (TIE) of Foreign Affairs, Trade and Development Canada (DFATD). TIE provides assistance to exporters in determining if export permits are required. It also publishes brochures and Notices to Exporters that are freely available on request and on our website www.exportcontrols.gc.ca. How to contact us: Export Controls Division (TIE) Foreign Affairs, Trade and Development Canada 111 Sussex Drive Ottawa, Ontario K1A 0G2 Telephone: (613) 996-2387 Facsimile: (613) 996-9933 Email: [email protected] For information on how to apply for an export permit and additional information on export controls please refer to our website. To enquire on the status of an export permit application: Recognized EXCOL users can check the status of an export permit application on-line. Non-recognized users can call (613) 996-2387 or email [email protected] and quote your export permit application identification (ref ID) number. Export Controls Division website: www.exportcontrols.gc.ca This Guide, at time of publication, encompasses the list of items enumerated on the Export Control List (ECL) that are controlled for export in accordance with Canadian foreign policy, including Canada’s participation in multilateral export control regimes and bilateral agreements. Unless otherwise specified, the export controls contained in this Guide apply to all destinations except the United States. Canada’s Export Control List can be found at the Department of Justice website at http://canada.justice.gc.ca/.
    [Show full text]
  • Physical Properties and Data of Optical Materials
    Physical Properties and Data of Optical Materials Moriaki Wakaki Keiei Kudo Takehisa Shibuya Laß) CRC Press ^^ J Taylor &. Francis Group '*-*"' Boca Raton London New York CRC Press is an imprint of the Taylor & Francis Group, an informa business • Table of Contents A AI (Aluminum) 1 AlSb (Aluminium Antimonide) 10 ADP (Ammonium Dihydrogen Phosphate) 16 Sb (Antimony) 21 Arsenic Selenium Glass 26 As (33%) + S (30%) + Br (37%) (Arsenic-Sulfur-Bromine Glass) 28 As2Se3 (Arsenic Tri-Selenide) 30 As2S3 (Arsenic Tri-Sulfide Glass) 33 6 Ba (Barium) 39 BaF2 (Barium Fluoride) 42 BaTi03 (Barium Titanate) 47 Be (Beryllium) 50 BeO (Beryllium Oxide) 54 Bi(Bismuth) 56 B(Boron) 61 C Cd(Cadmium) 65 CdSe (Cadmium Selenide) 70 CdS (Cadmium Sulfide) 75 CdTe (Cadmium Telluride) 82 CaC03 (Calcite) 89 CaF2 (Calcium Fluoride) 96 CaW04 (Calcium Tungstate) 105 CsBr (Cesium Bromide) 108 Csl (Cesium Iodide) 113 Cr(Chromium) 118 Cu(Copper) 122 CuCl (Cuprous Chloride) 128 D Diamond 135 G Ga (Gallium) 139 GaSb (Gallium Antimonide) 142 GaAs (Gallium Arsenide) 149 GaP (Gallium Phosphide) 158 Ge (Germanium) 165 Ge + Se + Te (Germanium-Selenium-Tellurium Glass) 180 Glass 182 Au (Gold) 191 * I In (Indium) 199 InSb (Indium Antimonide) 202 InAs (Indium Arsenide) 212 InP (Indium Phosphide) 218 Ir (Iridium) 224 Fe(Iron) 228 L LaF3 (Lanthanum Fluoride) 233 PbF2 (Lead Fluoride) 236 PbSe (Lead Selenide) 237 PbS (Lead Sulfide) 243 PbTe (Lead Telluride) 251 LiF (Lithium Fluoride) 257 Lucite 266 M Mg (Magnesium) 269 MgF2 (Magnesium Fluoride) 275 Mg2Ge (Magnesium Germanide) 282 MgO (Magnesium
    [Show full text]
  • (12) United States Patent (10) Patent No.: US 8,333,879 B2 M00re Et Al
    US0083.33879B2 (12) United States Patent (10) Patent No.: US 8,333,879 B2 M00re et al. (45) Date of Patent: Dec. 18, 2012 (54) ELECTRODEPOSITION OF DELECTRIC (56) References Cited COATINGS ON SEMCONDUCTIVE SUBSTRATES U.S. PATENT DOCUMENTS 3,455,806 A 7/1969 Spoor et al. (75) Inventors: Kelly L. Moore, Dunbar, PA (US); 3,663,389 A 5, 1972 Koral et al. Michael J. Pawlik, Glenshaw, PA (US); 3,749,657 A 7, 1973 Le Bras et al. Michael G. Sandala, Pittsburgh, PA 3,793,278 A 2f1974 De Bona (US); Craig A. Wilson, Allison Park, PA 3,928, 157 A 12/1975 Suematsu et al. 3,947.338 A 3, 1976 Jerabek et al. (US) 3,947,339 A 3, 1976 Jerabek et al. 3,962,165 A 6, 1976 Bosso et al. (73) Assignee: PPG Industries Ohio, Inc., Cleveland, 3,975,346 A 8, 1976 Bosso et al. OH (US) 3,984,299 A 10, 1976 Jerabek (*) Notice: Subject to any disclaimer, the term of this (Continued) patent is extended or adjusted under 35 FOREIGN PATENT DOCUMENTS U.S.C. 154(b) by 0 days. EP OO12463 A1 6, 1980 (21) Appl. No.: 13/240,455 OTHER PUBLICATIONS (22) Filed: Sep. 22, 2011 Kohler, E. P. "An Apparatus for Determining Both the Quantity of Gas Evolved and the Amount of Reagent Consumed in Reactions (65) Prior Publication Data with Methyl Magnesium Iodide'. J. Am. Chem. Soc., 1927, 49 (12), US 2012/OOO6683 A1 Jan. 12, 2012 3181-3188, American Chemical Society, Washington, D.C. Related U.S.
    [Show full text]
  • Safety Data Sheet
    SAFETY DATA SHEET Revision Date 29-Jun-2018 Revision Number 1 SECTION 1: IDENTIFICATION OF THE SUBSTANCE/MIXTURE AND OF THE COMPANY/UNDERTAKING 1.1. Product identification Product Description: Cadmium arsenide Cat No. : 22773 CAS-No 12006-15-4 Molecular Formula As2 Cd3 1.2. Relevant identified uses of the substance or mixture and uses advised against Recommended Use Laboratory chemicals. Uses advised against No Information available 1.3. Details of the supplier of the safety data sheet Company Alfa Aesar . Avocado Research Chemicals, Ltd. Shore Road Port of Heysham Industrial Park Heysham, Lancashire LA3 2XY United Kingdom Office Tel: +44 (0) 1524 850506 Office Fax: +44 (0) 1524 850608 E-mail address [email protected] www.alfa.com Product Safety Department 1.4. Emergency telephone number Call Carechem 24 at +44 (0) 1865 407333 (English only); +44 (0) 1235 239670 (Multi-language) SECTION 2: HAZARDS IDENTIFICATION 2.1. Classification of the substance or mixture CLP Classification - Regulation (EC) No 1272/2008 Physical hazards Based on available data, the classification criteria are not met Health hazards Acute oral toxicity Category 3 (H301) Acute Inhalation Toxicity - Dusts and Mists Category 2 (H330) Environmental hazards ______________________________________________________________________________________________ ALFAA22773 Page 1 / 10 SAFETY DATA SHEET Cadmium arsenide Revision Date 29-Jun-2018 ______________________________________________________________________________________________ Acute aquatic toxicity Category 1 (H400) Chronic
    [Show full text]
  • D. I. Bletskan "Phase Equilibrium in the Binary Systems a IV
    Journal of Ovonic Research Vol. 1, No. 5, October 2005, p. 53 - 60 PHASE EQUILIBRIUM IN THE SYSTEMS AIV – BVI Part. II Systems Germanium-Chalcogen D. I. Bletskan* Uzhgorod University, Uzhgorod, Ukraine The phases in the system germanium – chalcogen are reviewed. The phase transitions are discussed. 1.4 System Ge-S The phase diagram T-x of the binary system Ge-S has been firstly built by A. V. Novoselova et al. [39] using the data of thermal and X-ray analysis. Thereafter, the regions of the phase diagrams of the system Ge-S in the neighborhood of GeS and GeS2 have been carefully determined in [40-44] and are represented in Fig. 1.4. In this system there were found two stable chemical compounds, whose stoichiometric compositions correspond to GeS and GeSe2. The temperature conditions of GeS and GeS2 synthesis, the melting character and melting temperature, given in the literature, are different. Thus, the melting temperature of GeS, after the data of various authors are 938 K [39, 42], 940 K [40], 931 K [41, 46]. Many research reports [39, 42-44] show that GeS compound melts congruently. Nevertheless, in the papers [40, 41, 46] is demonstrated that, during very slow heating, GeS melts incongruently, according to the peritectic reaction: GeS(solid) = Ge(solid) + Liq(53 at.% S) (1.4) In the system Ge-S, on the germanium side, there is a large domain (3÷45 at.% S) of layer separation in the liquid state (stratification) with one phase rich in germanium and a phase with the composition approaching GeS.
    [Show full text]
  • Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres
    MEASUREMENT AND APPLICATION OF OPTICAL NONLINEARITIES IN INDIUM PHOSPHIDE, CADMIUM MERCURY TELLERIDE AND PHOTONIC CRYSTAL FIBRES Trefor James Sloanes A Thesis Submitted for the Degree of DEng at the University of St. Andrews 2009 Full metadata for this item is available in the St Andrews Digital Research Repository at: https://research-repository.st-andrews.ac.uk/ Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/723 This item is protected by original copyright Measurement and Application of Optical Nonlinearities in Indium Phosphide, Cadmium Mercury Telluride and Photonic Crystal Fibres This thesis is presented in application for the degree of Doctor of Engineering to the University of St. Andrews by Trefor James Sloanes I, Trefor James Sloanes, hereby certify that this thesis, which is approximately 28,500 words in length, has been written by me, that it is the record of work carried out by me and that it has not been submitted in any previous application for a higher degree. I was admitted as a research student in October, 2003 and as a candidate for the degree of Doctor of Engineering in August, 2004; the higher study for which this is a record was carried out in the University of St Andrews between 2003 and 2008. date ……………… signature of candidate ……………… I hereby certify that the candidate has fulfilled the conditions of the Resolution and Regulations appropriate for the degree of Doctor of Engineering in the University of St Andrews and that the candidate is qualified to submit this thesis in application for that degree.
    [Show full text]
  • Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films
    University of Tennessee, Knoxville TRACE: Tennessee Research and Creative Exchange Doctoral Dissertations Graduate School 12-2013 Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films John Daniel Brasfield University of Tennessee - Knoxville, [email protected] Follow this and additional works at: https://trace.tennessee.edu/utk_graddiss Part of the Semiconductor and Optical Materials Commons Recommended Citation Brasfield, John Daniel, "Chemical aporV Deposition of Heteroepitaxial Boron Phosphide Thin Films. " PhD diss., University of Tennessee, 2013. https://trace.tennessee.edu/utk_graddiss/2558 This Dissertation is brought to you for free and open access by the Graduate School at TRACE: Tennessee Research and Creative Exchange. It has been accepted for inclusion in Doctoral Dissertations by an authorized administrator of TRACE: Tennessee Research and Creative Exchange. For more information, please contact [email protected]. To the Graduate Council: I am submitting herewith a dissertation written by John Daniel Brasfield entitled "Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films." I have examined the final electronic copy of this dissertation for form and content and recommend that it be accepted in partial fulfillment of the equirr ements for the degree of Doctor of Philosophy, with a major in Chemistry. Charles S. Feigerle, Major Professor We have read this dissertation and recommend its acceptance: Laurence Miller, Frank Vogt, Ziling Xue Accepted for the Council: Carolyn R. Hodges Vice Provost and Dean of the Graduate School (Original signatures are on file with official studentecor r ds.) Chemical Vapor Deposition of Heteroepitaxial Boron Phosphide Thin Films A Dissertation Presented for the Doctor of Philosophy Degree The University of Tennessee, Knoxville John Daniel Brasfield December 2013 Copyright © 2013 by John Daniel Brasfield All rights reserved.
    [Show full text]
  • High-Throughput Physical Vapour Deposition Flexible Thermoelectric Generators
    www.nature.com/scientificreports OPEN High-throughput physical vapour deposition fexible thermoelectric generators Received: 14 January 2019 Katrina A. Morgan 1, Tian Tang2, Ioannis Zeimpekis 1, Andrea Ravagli1, Chris Craig1, Accepted: 25 February 2019 Jin Yao1, Zhuo Feng1, Dmitry Yarmolich3, Clara Barker 2, Hazel Assender2 & Published: xx xx xxxx Daniel W. Hewak1 Flexible thermoelectric generators (TEGs) can provide uninterrupted, green energy from body-heat, overcoming bulky battery confgurations that limit the wearable-technologies market today. High- throughput production of fexible TEGs is currently dominated by printing techniques, limiting material choices and performance. This work investigates the compatibility of physical vapour deposition (PVD) techniques with a fexible commercial process, roll-to-roll (R2R), for thermoelectric applications. We demonstrate, on a fexible polyimide substrate, a sputtered Bi2Te3/GeTe TEG with Seebeck coefcient (S) of 140 μV/K per pair and output power (P) of 0.4 nW per pair for a 20 °C temperature diference. For the frst time, thermoelectric properties of R2R sputtered Bi2Te3 flms are reported and we demonstrate the ability to tune the power factor by lowering run times, lending itself to a high- speed low-cost process. To further illustrate this high-rate PVD/R2R compatibility, we fabricate a TEG using Virtual Cathode Deposition (VCD), a novel high deposition rate PVD tool, for the frst time. This Bi2Te3/Bi0.5Sb1.5Te3 TEG exhibits S = 250 μV/K per pair and P = 0.2 nW per pair for a 20 °C temperature diference. Termoelectric generators (TEGs) can provide constant power for fexible electronic platforms. Using the body’s warmth, they do not rely on solar power, unlike photovoltaic generators, or on the user’s ftness, unlike elec- tromagnetic induction generators.
    [Show full text]
  • Gasb Paper R2 ACS Nano
    High-Mobility GaSb Nanostructures Cointegrated with InAs on Si Borg, Mattias; Schmid, Heinz; Gooth, Johannes; Rossell, Marta D.; Cutaia, Davide; Knoedler, Moritz; Bologna, Nicolas; Wirths, Stephan; Moselund, Kirsten E.; Riel, Heike Published in: ACS Nano DOI: 10.1021/acsnano.6b04541 2017 Document Version: Peer reviewed version (aka post-print) Link to publication Citation for published version (APA): Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., Bologna, N., Wirths, S., Moselund, K. E., & Riel, H. (2017). High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. ACS Nano, 11(3), 2554- 2560. https://doi.org/10.1021/acsnano.6b04541 Total number of authors: 10 Creative Commons License: Unspecified General rights Unless other specific re-use rights are stated the following general rights apply: Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal Read more about Creative commons licenses: https://creativecommons.org/licenses/ Take down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.
    [Show full text]
  • Modelling and Optimising Gaas/Al (X) Ga (1-X) As Multiple Quantum Well
    University of London Imperial College of Science, Technology and Medicine Department of Physics Modelling and Optimising GaAs/AlxGa1 xAs − Multiple Quantum Well Solar Cells James P. Connolly arXiv:1006.1053v1 [cond-mat.mes-hall] 5 Jun 2010 Submitted in part fulfilment of the requirements for the degree of Doctor of Philosophy in Science of the University of London and the Diploma of Imperial College, January 1997 2 Abstract The quantum well solar cell (QWSC) is a p - i - n solar cell with quantum wells in the intrinsic region. Previous work has shown that QWSCs have a greater open circuit voltage (Voc) than would be provided by a cell with the quantum well effective bandgap. This suggests that the fundamental efficiency limits of QWSCs are greater than those of single bandgap solar cells. The following work investigates QWSCs in the GaAs/AlxGa1−xAs materials system. The design and optimisation of a QWSC in this system requires studies of the voltage and current dependencies on the aluminium fraction. QWSCs with different aluminium fractions have been studied and show an increasing Voc with increasing barrier aluminium composition. The QE however decreases with increasing aluminium composition. We de- velop a model of the QE to test novel QWSC designs with a view to minimising this problem. This work concentrates on two design changes. The first deals with com- positionally graded structures in which the bandgap varies with position. This bandgap variation introduces an quasi electric field which can be used to increase minority carrier collection in the low efficiency p and n layers. This technique also increases the light flux reaching the highly efficient depletion regions.
    [Show full text]
  • Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory
    Computational Chemistry, 2016, 4, 73-82 Published Online July 2016 in SciRes. http://www.scirp.org/journal/cc http://dx.doi.org/10.4236/cc.2016.43007 Determination of Band Structure of Gallium-Arsenide and Aluminium-Arsenide Using Density Functional Theory J. A. Owolabi1, M. Y. Onimisi1, S. G. Abdu2, G. O. Olowomofe1 1Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria 2Department of Physics, Kaduna State University, Kaduna, Nigeria Received 18 April 2016; accepted 2 July 2016; published 5 July 2016 Copyright © 2016 by authors and Scientific Research Publishing Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/ Abstract This research paper is on Density Functional Theory (DFT) within Local Density Approximation. The calculation was performed using Fritz Haber Institute Ab-initio Molecular Simulations (FHI- AIMS) code based on numerical atomic-centered orbital basis sets. The electronic band struc- ture, total density of state (DOS) and band gap energy were calculated for Gallium-Arsenide and Aluminium-Arsenide in diamond structures. The result of minimum total energy and computa- tional time obtained from the experimental lattice constant 5.63 A for both Gallium Arsenide and Aluminium Arsenide is −114,915.7903 eV and 64.989 s, respectively. The electronic band structure analysis shows that Aluminium-Arsenide is an indirect band gap semiconductor while Gallium-Arsenide is a direct band gap semiconductor. The energy gap results obtained for GaAs is 0.37 eV and AlAs is 1.42 eV. The band gap in GaAs observed is very small when compared to AlAs.
    [Show full text]