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Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination

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Arxiv:1010.1610V1 [Physics.Ins-Det] 8 Oct 2010 Ai Mouneyrac, David Emndtetm Osat O H Rpigadde- and Illumination Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures David Mouneyrac,1,2 John G. Hartnett,1 Jean-Michel Le Floch,1 Michael E. Tobar,1 Dominique Cros,2 Jerzy Krupka3∗ 1School of Physics, University of Western Australia 35 Stirling Hwy, Crawley 6009 WA Australia 2Xlim, UMR CNRS 6172, 123 av. Albert Thomas, 87060 Limoges Cedex - France 3Institute of Microelectronics and Optoelectronics Department of Electronics, Warsaw University of Technology, Warsaw, Poland (Dated: October 27, 2018) We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semicon- ductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data. PACS numbers: 72.20.Jv 71.20.Nr 77.22.-d I. INTRODUCTION effect by allowing the halogen lamp to come to full inten- sity before connecting the optical fiber to the resonant Since 1977, many experiments have been performed cavity. And in the case of the lasers used in this work a in order to study the effects of light on semiconduc- shutter was used to interrupt the beam. 1,2 3 4 In this paper we extend the previous work to in- tors such as Zn0.02Cd0.98Te, AlAs/GaAs, XAs:Si, 5 6 clude also illumination with three different monochro- AlGaN/GaN, AlxGa1−xC60, gallium phosphide (GaP) and gallium arsenide (GaAs).7,8 Those experiments matic sources, and over a larger cryogenic temperature showed changes in the microwave properties of the semi- range. And we develop a new hypothesis to explain the conductors under light illumination and persistence of role of impurity and defect sites with ionization ener- photoconductivity after the illumination was terminated. gies in the forbidden band gap of these semiconductors, 13,14 16,17 Different models have been developed to explain these GaP, GaAs and 4H-silicon carbide (4H-SiC) at effects9–12 but the exact mechanism still remains a con- microwave frequencies and cryogenic temperatures. We troversy. Previously we presented the results of measure- apply a simple mathematical model that precisely de- ments of gallium phosphide and gallium arsenide under scribes detrapping and retrapping of carriers as a func- illumination using the very sensitive “whispering gallery tion of time from switching the light source on or off. mode” method.7,8 The whispering gallery mode tech- This phenomenological model is consistent with all mea- nique used on these samples is able to resolve changes surements at different wavelengths of incident light and in microwave permittivity and losses of the order of a at different temperatures. few parts per million. That allowed us to precisely de- arXiv:1010.1610v1 [physics.ins-det] 8 Oct 2010 termined the time constants for the trapping and de- trapping rates in gallium phosphide and gallium arsenide II. METHOD under white light illumination. In that previous work7 double time constants were ob- High-purity non-doped single-crystal semiconductor served. Since then, more measurements have been made cylinders of GaP (48.1 mm diameter and 5 mm height), to try to understand the phenomenon. It was discov- GaAs (25.4 mm diameter and 6.3 mm height) and 4H- ered that one of the time constants, of the two observed, SiC (11 mm diameter and 2.62 mm height) were placed was related to a warming up of the halogen lamp, not a in silver-plated copper cavities (see Fig. 1; individual heating effect on the resonator, but an increase intensity cavity dimensions were chosen to suit the semiconduc- of the source as it started up. That introduced a spuri- tor sample under examination7,8,16) located in a vacuum ous effect to the evaluation of the relaxation times under chamber and cooled using a 35 K single-stage cryocooler. light illumination in those materials. We have now made Light (white (10 mW), red (λ = 633 nm, 1.4 mW), rigorous measurements, wherein we have eliminated this green (λ = 532 nm, 1.4 mW) or blue (λ = 405 nm, 2 Light ON OFF Spring 3 x 10-5 Sample support 36.4K Sample 40K 50K 75K Loop -5 probe Q 2 x 10 / light 1 Closed cavity Optic fiber -5 FIG. 1: Semiconductor sample located in a closed cavity and 1 x 10 excited by two magnetic loop probes connected via coaxial cables to a vector network analyzer in the room temperature 3 4 environment. 1 x 10 1 x 10 Time [s] Light ON OFF FIG. 3: (Color online) Time evolution of the microwave losses (Q−1) of GaP illuminated with a 10 mW white light source -5 at different temperatures. Each data set has been scaled by 6 x 10 36.4K −1 40K a constant offset to make the initial Q equal to the same 50K initial value as the 50 K measurement, before illumination. 75K The (black) dashed line is a modeled fit. See text for details. r -5 /ε r 4 x 10 conductor where, ∆ε ∆f p ∆ε = − ε r , (1) 2 x 10-5 f0 2 εr and ∆f = f − f0, f0 is the frequency of the mode before illumination, pε is the electric energy filling factor, εr the isotropic real dielectric permittivity and ∆εr the change 0 in this value as compared to that before illumination or 1 x 103 1 x 104 after the illumination was switched off, whichever the Time [s] case. A change in the microwave losses (tanδ) is related to a change of the conductivity, FIG. 2: (Color online) Time evolution of the relative per- mittivity (εr) of GaP illuminated with a 10 mW white light σ0 ∆σ source at different temperatures. The (black) dashed and dot- tanδ = tanδd + + , (2) dashed lines are modeled fits. See text for details. ωε0εr ωε0εr where tanδd is the dielectric loss tangent associated with pure dielectric loss mechanisms (e.g., electronic and ionic 1.4 mW)) was sent through a multimode optical fiber polarization), σ0 is the electric conductivity in the semi- to illuminate the surface of the semiconductor sample as conductor in darkness, and ∆σ is the excess conductivity shown in Fig. 1. The microwave response in the sample associated with the change of state of free carriers dur- was characterized by a change in the measured frequency ing and after illumination. The latter may be determined and losses of a suitably chosen whispering gallery mode from, that has a sufficiently high order azimuthal mode number such that its frequency and microwave losses are largely ∆σ 1 1 − 1 determined only by the semiconductor and not the en- = , (3) ωε0εr pε Q Q0 closing cavity. The resonance was weakly coupled to a vector network analyzer and tracked with a fast data ac- where Q is the mode Q-factor after illumination and Q0 quisition system. is the Q-factor of the mode before any illumination. The observed change of the mode frequency (∆f) is Since the mode electric energy filling factor is constant related to a modification of the permittivity of the semi- over our measurements, and nearly equal to unity in a 3 whispering gallery (WG) mode with a large azimuthal itive the term applies to a retrapping process and when mode number, the reciprocal of the Q-factor is a good it is negative to a detrapping process in Eq. (4). approximation for the microwave losses here. Similarly the change in the measured microwave losses, Different WG modes were chosen and measured in the resulting from a change in the conductivity of the semi- different samples at certain cryogenic temperatures. The conductor, due to trapping or detrapping of free carriers, W GE11,0,0 mode with a resonance frequency of 10.9 GHz can be modeled as a function of time t, from some initial at 50 K was measured in the GaP sample, the W GH7,0,0 time t0 before switching, as, mode (12.53 GHz at 50 K) in the GaAs sample and the n W GE8,0,0 mode (36.6 GHz at 50 K) in the 4H-SiC sam- 1 1 −1 − = l∞ + c (exp[(t − t )/τ ] − 1) , (5) ple. Q Q i 0 i 0 Xi=1 The resonators were cooled, the temperature stabilized at a fixed set point, the light source was turned on and re- where l∞ is the steady-state limiting value of the change mained until a stable state (both in mode frequency and in the microwave losses after a long time period with losses) was obtained then the light source was switched the light source ON or OFF, and ci are free parameters off. The frequency and Q-factor of the chosen WG mode determined from the best fit to the data. As above a were tracked by the data acquisition system during this positive valued ci applies to a retrapping process and process.
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