Calibration Standards and Specimens
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(12) United States Patent (10) Patent N0.: US 8,304,580 B2 Nanmyo Et A]
US008304580B2 (12) United States Patent (10) Patent N0.: US 8,304,580 B2 Nanmyo et a]. (45) Date of Patent: Nov. 6, 2012 (54) METHOD FOR PRODUCING TRIS(PER FOREIGN PATENT DOCUMENTS FLUORO-ALKANESULFONYL)METHIDE EP 0813521 B1 * 9/2000 ACID SALT JP 2000-226392 A 8/2000 JP 2000-256348 A 9/2000 (75) Inventors: Tsutomu Nanmyo, Ube (JP); Shintaro JP 2000-256348 A * 9/2000 Sasaki, Ube (JP); Takashi Kume, OTHER PUBLICATIONS KaWagoe (JP) English translation of JP-2000-256348-A; “machine translation” (73) Assignee: Central Glass Company, Limited, from JPO link at: http://WWW4.ipd1.inpit.go.jp/Tokujitu/ Ube-shi (JP) tj sogodbenkipdl accessed Oct. 25, 201 1; relevant part of document.* European Search Report dated Jun. 8, 2011 (four (4) pages). ( * ) Notice: Subject to any disclaimer, the term of this Waller et al., “Tris (tri?uoromethanesulfonyl) methide (“Tri?ide”) patent is extended or adjusted under 35 Anion: Convenient Preparation, X-ray Crystal Structures, and U.S.C. 154(b) by 528 days. Exceptional Catalytic Activity as a Counterion With Ytterbium (III) and Scandium (111)”, Journal of Organic Chemistry, vol. 64, 1999, pp. (21) Appl. N0.: 12/520,17s 2910-2913, XP-002636992. Turowsky et al., “Tris ((tri?uoromethyl) sulfonyl) methane, HC (22) PCT Filed: Dec. 18, 2007 (SO2CF3)3”, Journal of Inorganic Chemistry, vol. 27, 1988, pp. 2135-2137, XP-002636993. (86) PCT No.: PCT/JP2007/074296 International Search Report and PCT/ISN237 W/translation dated Feb. 12, 2008 (Seven (7) pages). § 371 (0X1)’ LutZ Turowsky et al., “Tris((tri?uoromethyl)sulfonyl)methane, (2), (4) Date: Jun. -
WO 2016/074683 Al 19 May 2016 (19.05.2016) W P O P C T
(12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2016/074683 Al 19 May 2016 (19.05.2016) W P O P C T (51) International Patent Classification: (81) Designated States (unless otherwise indicated, for every C12N 15/10 (2006.01) kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, (21) International Application Number: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, PCT/DK20 15/050343 DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, (22) International Filing Date: HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, 11 November 2015 ( 11. 1 1.2015) KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, (25) Filing Language: English PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, (26) Publication Language: English SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (30) Priority Data: PA 2014 00655 11 November 2014 ( 11. 1 1.2014) DK (84) Designated States (unless otherwise indicated, for every 62/077,933 11 November 2014 ( 11. 11.2014) US kind of regional protection available): ARIPO (BW, GH, 62/202,3 18 7 August 2015 (07.08.2015) US GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, (71) Applicant: LUNDORF PEDERSEN MATERIALS APS TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, [DK/DK]; Nordvej 16 B, Himmelev, DK-4000 Roskilde DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, (DK). -
High Purity Inorganics
High Purity Inorganics www.alfa.com INCLUDING: • Puratronic® High Purity Inorganics • Ultra Dry Anhydrous Materials • REacton® Rare Earth Products www.alfa.com Where Science Meets Service High Purity Inorganics from Alfa Aesar Known worldwide as a leading manufacturer of high purity inorganic compounds, Alfa Aesar produces thousands of distinct materials to exacting standards for research, development and production applications. Custom production and packaging services are part of our regular offering. Our brands are recognized for purity and quality and are backed up by technical and sales teams dedicated to providing the best service. This catalog contains only a selection of our wide range of high purity inorganic materials. Many more products from our full range of over 46,000 items are available in our main catalog or online at www.alfa.com. APPLICATION FOR INORGANICS High Purity Products for Crystal Growth Typically, materials are manufactured to 99.995+% purity levels (metals basis). All materials are manufactured to have suitably low chloride, nitrate, sulfate and water content. Products include: • Lutetium(III) oxide • Niobium(V) oxide • Potassium carbonate • Sodium fluoride • Thulium(III) oxide • Tungsten(VI) oxide About Us GLOBAL INVENTORY The majority of our high purity inorganic compounds and related products are available in research and development quantities from stock. We also supply most products from stock in semi-bulk or bulk quantities. Many are in regular production and are available in bulk for next day shipment. Our experience in manufacturing, sourcing and handling a wide range of products enables us to respond quickly and efficiently to your needs. CUSTOM SYNTHESIS We offer flexible custom manufacturing services with the assurance of quality and confidentiality. -
Crystal Structure Transformations in Binary Halides
1 A UNITED STATES DEPARTMENT OF A111D3 074^50 IMMERCE JBLICAT10N NSRDS—NBS 41 HT°r /V\t Co^ NSRDS r #C£ DM* ' Crystal Structure Transformations in Binary Halides u.s. ARTMENT OF COMMERCE National Bureau of -QC*-| 100 US73 ho . 4 1^ 72. NATIONAL BUREAU OF STANDARDS 1 The National Bureau of Standards was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation’s science and technology and facilitate their effective application for public benefit. To this end, the Bureau conducts research and provides: (1) a basis for the Nation’s physical measure- ment system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology, the Center for Computer Sciences and Technology, and the Office for Information Programs. THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United States of a complete and consistent system of physical measurement; coordinates that system with measurement systems of other nations; and furnishes essential services leading to accurate and uniform physical measurements throughout the Nation’s scien- tific community, industry, and commerce. The Institute consists of a Center for Radia- tion Research, an Office of Measurement Services and the following divisions: Applied Mathematics—Electricity—Heat—Mechanics—Optical Physics—Linac Radiation 2—Nuclear Radiation 2—Applied Radiation 2—Quantum Electronics 3— Electromagnetics 3—Time and Frequency 3—Laboratory Astrophysics 3—Cryo- 3 genics . -
Chemical Names and CAS Numbers Final
Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number C3H8O 1‐propanol C4H7BrO2 2‐bromobutyric acid 80‐58‐0 GeH3COOH 2‐germaacetic acid C4H10 2‐methylpropane 75‐28‐5 C3H8O 2‐propanol 67‐63‐0 C6H10O3 4‐acetylbutyric acid 448671 C4H7BrO2 4‐bromobutyric acid 2623‐87‐2 CH3CHO acetaldehyde CH3CONH2 acetamide C8H9NO2 acetaminophen 103‐90‐2 − C2H3O2 acetate ion − CH3COO acetate ion C2H4O2 acetic acid 64‐19‐7 CH3COOH acetic acid (CH3)2CO acetone CH3COCl acetyl chloride C2H2 acetylene 74‐86‐2 HCCH acetylene C9H8O4 acetylsalicylic acid 50‐78‐2 H2C(CH)CN acrylonitrile C3H7NO2 Ala C3H7NO2 alanine 56‐41‐7 NaAlSi3O3 albite AlSb aluminium antimonide 25152‐52‐7 AlAs aluminium arsenide 22831‐42‐1 AlBO2 aluminium borate 61279‐70‐7 AlBO aluminium boron oxide 12041‐48‐4 AlBr3 aluminium bromide 7727‐15‐3 AlBr3•6H2O aluminium bromide hexahydrate 2149397 AlCl4Cs aluminium caesium tetrachloride 17992‐03‐9 AlCl3 aluminium chloride (anhydrous) 7446‐70‐0 AlCl3•6H2O aluminium chloride hexahydrate 7784‐13‐6 AlClO aluminium chloride oxide 13596‐11‐7 AlB2 aluminium diboride 12041‐50‐8 AlF2 aluminium difluoride 13569‐23‐8 AlF2O aluminium difluoride oxide 38344‐66‐0 AlB12 aluminium dodecaboride 12041‐54‐2 Al2F6 aluminium fluoride 17949‐86‐9 AlF3 aluminium fluoride 7784‐18‐1 Al(CHO2)3 aluminium formate 7360‐53‐4 1 of 75 Chemical Abstract Chemical Formula Chemical Name Service (CAS) Number Al(OH)3 aluminium hydroxide 21645‐51‐2 Al2I6 aluminium iodide 18898‐35‐6 AlI3 aluminium iodide 7784‐23‐8 AlBr aluminium monobromide 22359‐97‐3 AlCl aluminium monochloride -
Morphological and Electrical Properties of Nickel Based Ohmic Contacts Formed by Laser Annealing Process on N-Type 4H-Sic
Preprint – Manuscript submitted to Materials Science in Semiconductor Processing (November 20, 2018) Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC S. Rascunà 1*, P. Badalà 1, C. Tringali 1, C. Bongiorno 2, E. Smecca 2, A. Alberti 2, S. Di Franco 2, F. Giannazzo 2, G. Greco 2, F. Roccaforte 2, M. Saggio 1 1 STMicroelectronics SRL, Stradale Primosole 50, 95121 Catania, Italy 2 Consiglio Nazionale delle Ricerche – Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n.5 Zona Industriale, I-95121 Catania, Italy (*) Corresponding author: [email protected], For the n-type SiC, annealed Ni-films are Abstract. This work reports on the commonly used to form nickel silicide (Ni 2Si) morphological and electrical properties of Ni- back-side Ohmic contacts. Typically, rapid based back-side Ohmic contacts formed by thermal annealing (RTA) exceeding 900°C laser annealing process for SiC power diodes. are used to achieve an Ohmic behavior [3]. Nickel films, 100 nm thick, have been However, today there is the need to replace sputtered on the back-side of heavily doped the conventional thermal annealing by laser 110 µm 4H-SiC thinned substrates after annealing processes carried out on the back- mechanical grinding. Then, to achieve Ohmic side of thinned wafers at the end of the behavior, the metal films have been irradiated fabrication flow [4]. with an UV excimer laser with a wavelength In Fig. 1, a schematic of a standard flow of 310 nm, an energy density of 4.7 J/cm 2 and chart (with and without grinding step) for the pulse duration of 160 ns. -
The Specific Heats of the Alkali Halides and Their Spectroscopic Behaviour
THE SPECIFIC HEATS OF THE ALKALI HALIDES AND THEIR SPECTROSCOPIC BEHAVIOUR Part XH. The Potassium and Rubidium Salts BY SIR C. V. RAMAN (Memoir No. 131 of the Raman Research Institute, Bangalore-6) Received July 7, 1962 TABLE I below reproduces the atomic vibration frequencies of the halides of potassium and rubidium calculated by the approximate method set out in Part V of the memoir. Only two force-constants a and fl appear in the formul~e; a is a measure of the resistance to a change of bond-lengths and q to a change of the bond-angles in the crystal structure. The figures in Table I are the same as those listed in Part VI of the memoir but they are arranged in a slightly different manner. The highest frequency appears first, then the four frequencies of vibration of the octahedral layers and TABLE I The Atomic Vibration Frequencies (cm. -1) Degeneracies 1 8 3 " 6 KF 202 166 166 116 t 116 182 167 114 87 KC1 133 96 96 92 92 119 102 85 60 KBr 105 86 86 60 60 96 88 58 43 KI 90 79 79 44 44 84 8O 42 32 RbF 167 1 151 151 71 71 158 152 69 55 RbCI 103 87 87 56 56 95 89 53 39 78 56 56 54 54 71 63 47 RbBr I i 33 RbI 64 I 49 49 40 40 59 36 26 60 Specific Heats of Alkali Halides and their Spectroscopic Behavio,lr--XII 61 finally the frequencies of the four modes of coupled vibration of the atoms in the cubic layers. -
Wide Gap Braze Repairs of Nickel Superalloy Gas Turbine Components
WIDE GAP BRAZE REPAIRS OF NICKEL SUPERALLOY GAS TURBINE COMPONENTS by Cheryl Hawk A thesis submitted to the Faculty and Board of Trustees of the Colorado School of Mines in partial fulfillment of the requirements for the degree of Master of Science (Metallurgical and Materials Engineering). Golden, Colorado Date: ______________________ Signed: ______________________________ Cheryl Hawk Signed: ______________________________ Dr. Stephen Liu Thesis Advisor Golden, Colorado Date: ______________________ Signed: ______________________________ Dr. Ivar Reimanis Professor and Head Department of Metallurgical and Materials Engineering ii ABSTRACT The effect of microstructure and processing parameters on the bend properties of wide gap braze repairs has been investigated for BNi-2 and BNi-5 filler metals. BNi-2 braze alloys developed a brittle eutectic constituent that was the source for crack initiation and propagation. BNi-5 braze alloys developed large pores and lack of fusion to the base metal René 108 that decreased the strength of the joint. Three types of crack behaviors were observed within the two braze alloys. (1) Crack initiation and propagation through the brittle eutectic constituent. (2) Crack initiation and propagation through the brittle eutectic constituent/ matrix interface. The crack would propagate through grain boundaries if the eutectic constituent was dispersed. (3) Crack propagation follows type 1 or type 2, but propagated due to a major defect and coalesced with the defect. Braze alloy chemistry was improved by changing the filler metal-additive powder ratio. For the BNi-2 braze alloys, a mixing ratio of 40 wt.% BNi-2 produced the lowest volume percent of the brittle eutectic constituent. These alloys produced the highest strengths. -
Bromine K-Edge EXAFS Studies of Bromide Binding To
FEBS 22491 FEBS Letters 457 (1999) 237^240 CORE Metadata, citation and similar papers at core.ac.uk Provided byBromine Elsevier - Publisher Connector K-edge EXAFS studies of bromide binding to bromoperoxidase from Ascophyllum nodosum Holger Daua, Jens Dittmera, Matthias Eppleb, Jan Hanssc, Erzse¨bet Kissb, Dieter Rehderb;*, Carola Schulzkeb, Hans Vilterd a Fachbereich Biologie, Universita«t Marburg, D-35032 Marburg, Germany b Institut fu«r Anorganische und Angewandte Chemie, Universita«t Hamburg, D-20146 Hamburg, Germany c Institut fu«r Physik, Universita«t Augsburg, D-86159 Augsburg, Germany d ZurmaienstraMe 16, D-54292 Trier, Germany Received 4 June 1999; received in revised form 30 July 1999 complex hydrogen bonding network to the vanadate moiety. Abstract Bromine K-edge EXAFS studies have been carried out for bromide/peroxidase samples in Tris buffer at pH 8. The Particularly noteworthy in the context of the following dis- results are compared with those of aqueous (Tris-buffered) cussion is Ser-402, which is at a distance to the vanadium î bromide and vanadium model compounds containing Br-V, centre of 4^5 A. Br-C(aliphatic) and Br-C(aromatic) bonds. It is found that While an X-ray di¡raction analysis [2] and 17O NMR meas- bromide does not coordinate to the vanadium centre. Rather, urements [7] of the peroxo forms of the peroxidases have bromine binds covalently to carbon. A possible candidate is active revealed direct coordination of peroxide to the vanadium site serine. centre, well in accord with the known ability of V(V) to z 1999 Federation of European Biochemical Societies. -
Ornine on the Aiectli Iodides. by ~VILLIAMNORMAN RAE
View Article Online / Journal Homepage / Table of Contents for this issue 1286 RAE : THE ACTION OF BROMINE ON THE ALKAT,I IODIDES. CX LIV.-The Action of &-ornine on the AIEctli Iodides. By ~VILLIAMNORMAN RAE. INa paper by Jackson and Derby on ferrous iodide (Amer. Chem. J., 1900, 24, 15), mention is made of the action of bromine vapour on solid ammonium iodide; these authors state that the ammonium iodide first turned black, but as the absorption went on it finally became converted into the scarlet ammonium bronio-iodo-bromide, NH,BrIBr. A curve constructed from the increase in weight of the ammonium iodide and the time of exposure to bromine showed that therel was a marked diminution in the speed of absorption after the first atom of bromine had been added, and they were unable to decide whether th4e black intermediate1 product was another compound, NH,BrI, or only a mixture of ammoniuni bromide and free iodine. The present investigation was under- taken in order to settle this point, and also to determine whether the action of bromine on other solid iodides follows a similar course. Ammonium bromo-iodo-bromide, NH,BrIBr, was prepared by dissolving the calculated quantities of ammonium bromide, iodine, and bromine in a small quantity of water; the solution was a deep ruby-red colour, and when left in a desiccator over phosphoric oxide slowly deposited crystals of the salt. A similar result was obtained starting with ammonium iodide and bromine. A specimen was analysed by adding a weighed quantity to a Published on 01 January 1915. -
Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide
Journal of ELECTRONIC MATERIALS, Vol. 48, No. 4, 2019 https://doi.org/10.1007/s11664-019-07020-0 Ó 2019 The Author(s) Investigation of a Self-Aligned Cobalt Silicide Process for Ohmic Contacts to Silicon Carbide MATTIAS EKSTRO¨ M ,1,2 ANDREA FERRARIO ,1 and CARL-MIKAEL ZETTERLING 1 1.—Department of Electronics, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, 164 40 Kista, Sweden. 2.—e-mail: [email protected] Previous studies showed that cobalt silicide can form ohmic contacts to p-type 6H-SiC by directly reacting cobalt with 6H-SiC. Similar results can be achieved on 4H-SiC, given the similarities between the different silicon car- bide polytypes. However, previous studies using multilayer deposition of sil- icon/cobalt on 4H-SiC gave ohmic contacts to n-type. In this study, we investigated the cobalt silicide/4H-SiC system to answer two research ques- tions. Can cobalt contacts be self-aligned to contact holes to 4H-SiC? Are the self-aligned contacts ohmic to n-type, p-type, both or neither? Using x-ray diffraction, it was found that a mixture of silicides (Co2Si and CoSi) was reliably formed at 800C using rapid thermal processing. The cobalt silicide mixture becomes ohmic to epitaxially grown n-type (1 Â 1019cmÀ3) if annealed at 1000C, while it shows rectifying properties to epitaxially grown p-type (1 Â 1019cmÀ3) for all tested anneal temperatures in the range 800–1000C. À4 2 The specific contact resistivity (qC)ton-type was 4:3 Â 10 X cm . This work opens the possibility to investigate other self-aligned contacts to silicon car- bide. -
Technical Program
Technical Program sheets growth, split and roll-up model for the formation of 1-D titanate thin films was proposed. 2008 Nanomaterials: Fabrication, Properties, and 9:30 AM Applications: Processing and Properties Wet Chemical Synthesis of Highly Aligned ZnO Nanowires with Optical Sponsored by: The Minerals, Metals and Materials Society, TMS Electronic, Magnetic, Properties: Jean-Claude Tedenac1; Mezy Aude1; Ravot Didier1; Tichit Didier1; and Photonic Materials Division, TMS: Nanomaterials Committee 1 1 Program Organizers: Wonbong Choi, Florida International University; Seong Jin Gerardin Corinne ; Institut Gerhardt Universite de Montpellier 2 Koh, University of Texas at Arlington; Donna Senft, US Air Force; Ganapathiraman ZnO nanowires have a great commercial stake, due to their physical and Ramanath, Rensselaer Polytechnic Institute; Seung Kang, Qualcomm Inc chemical properties. Many methods have been employed for the growth of ZnO nanomaterials (sputtering, chemical vapour deposition, molecular beam epitaxy, Wednesday AM Room: 273 metal-organic chemical vapour deposition) which greatly improve the crystalline March 12, 2008 Location: Ernest Morial Convention Center quality. However, low cost and simplicity of the synthesis processes are required for commercial applications. The wet chemical synthesis route seems to meet Session Chairs: Pawel Keblinski, Rensselaer Polytechnic Institute; Douglas these requirements, enabling the preparation of high crystal quality and proper Chrisey, Rensselaer Polytechnic Institute growth orientation of ZnO nanowires. Nethertheless, control of the ZnO size, morphology, dimensionality, and self-assembly remains a very important 8:30 AM Invited stake, due to their tight influence on ZnO properties. Efficient control of both Optical Assembly of Nanomaterials: Paul Braun1; 1University of Illinois at nanostructure dimensionality and assembly is obtained by using appropriate Urbana-Champaign synthesis parameters during the seeded growth process.