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FJP2145 — ESBC™ Rated NPN Power Transistor MOS- (2) ™ March 2015 FDC655 FJP2145 S C G B Figure 3

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FJP2145 — ESBC™ Rated NPN Power Transistor MOS- (2) ™ March 2015 FDC655 FJP2145 S C G B Figure 3 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — March 2015 FJP2145 ESBC™ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description NPN Power Transistor (1) The FJP2145 is a low-cost, high-performance power VCS(ON) IC Equiv. RCS(ON) switch designed to provide the best performance when 0.21 V 2 A 0.105 Ω used in an ESBC™ configuration in applications such as: • Low Equivalent On Resistance power supplies, motor drivers, smart grid, or ignition • Very Fast Switch: 150 kHz switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exception- • Wide RBSOA: Up to 1100 V ally low on-resistance and very low switching losses. •Avalanche Rated ™ • Low Driving Capacitance, No Miller Capacitance The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOS- • Low Switching Losses FET is a low-voltage, low-cost, surface-mount device that • Reliable HV Switch: No False Triggering due to combines low-input capacitance and fast switching. The High dv/dt Transients ESBC™ configuration further minimizes the required driv- ing power because it does not have Miller capacitance. Applications The FJP2145 provides exceptional reliability and a large • High-Voltage, High-Speed Power Switch operating range due to its square reverse-bias-safe-oper- • Emitter-Switched Bipolar/MOSFET Cascode ating-area (RBSOA) and rugged design. The device is (ESBC™) avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The power switch is manufactured using a dedicated • Motor Drivers and Ignition Drivers high-voltage bipolar process and is packaged in a high- voltage TO-220 package. C C 2 B FJP2145 1 B FDC655 1 TO-220 G 1.Base 2.Collector 3.Emitter E 3 S Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration(2) Ordering Information Part Number Marking Package Packing Method FJP2145TU J2145 TO-220 TUBE Notes: 1. Figure of Merit. 2. Other Fairchild MOSFETs can be used in this ESBC application. © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2145 Rev. 1.1 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — Absolute Maximum Ratings(3) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current 5 A NPN Power Transistor IB Base Current 1.5 A PC Collector Dissipation (TC = 25°C) 120 W ° TJ Operating and Junction Temperature Range -55 to +125 C ° TSTG Storage Temperature Range -55 to +150 C (4) ° EAR Avalanche Energy (TJ = 25 C, 1.2 mH) 15 mJ Notes: 3. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%. 4. Lab characterization data only for reference. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. Unit ° RθjC Thermal Resistance, Junction to Case 1.04 C/W ° RθjA Thermal Resistance, Junction to Ambient 78.72 C/W © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2145 Rev. 1.1 2 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — Electrical Characteristics(5) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 1 mA, IE = 0 1100 V Collector-Emitter Breakdown BV I = 5 mA, I = 0 800 V CEO Voltage C B BVEBO Emitter-Base Breakdown Voltage IE = 1 mA, IC = 0 7 V μ ICBO Collector Cut-off Current VCB = 800 V, IE = 0 10 A μ IEBO Emitter Cut-off Current VEB = 5 V, IC = 0 10 A NPN Power Transistor hFE1 VCE = 5 V, IC = 0.2 A 20 40 DC Current Gain hFE2 VCE = 5 V, IC = 1 A 8 IC = 0.25 A, IB = 0.05 A 0.049 V IC = 0.5 A, IB = 0.167 A 0.052 V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 0.33 A 0.082 V IC = 1.5 A, IB = 0.3 A 0.151 2.000 V IC = 500 mA, IB = 50 mA 0.752 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.5 A, IB = 0.3 A 0.833 1.500 V IC = 2 A, IB = 0.4 A 0.855 V CIB Input Capacitance VEB = 5 V, IC = 0, f = 1 MHz 1.618 pF COB Output Capacitance VCB = 200 V, IE = 0, f = 1 MHz 11.39 pF fT Current Gain Bandwidth Product VCE = 10 V, IC = 0.2 A 15 MHz Note: 5. Pulse test is pulse width ≤ 5 ms, duty cycle ≤ 10%. © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2145 Rev. 1.1 3 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — ESBC-Configured Electrical Characteristics(6) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Current Gain Bandwidth f I = 0.1 A,V = 10 V 28.40 MHz T Product C CE Itf Inductive Current Fall Time 95 ns Ω ts Inductive Storage TimeVCC = 100 V, VGS = 10 V, RG = 4 7 , 0.13 ns VClamp = 500 V, IC = 0.5 A, Vtf Inductive Voltage Fall Timeμ 135 ns IB = 0.05 A, HFE = 10, LC = 166 H, Vtr Inductive Voltage Rise TimeSRF = 684 kHz 80 ns NPN Power Transistor tc Inductive Crossover Time 115 ns Itf Inductive Current Fall Time 50 ns Ω ts Inductive Storage TimeVCC = 100 V, VGS = 10 V, RG = 47 , 0.34 ns VClamp = 500 V, IC = 1 A, Vtf Inductive Voltage Fall Timeμ 150 ns IB = 0.2 A, HFE = 5, LC = 166 H, Vtr Inductive Voltage Rise TimeSRF = 684 kHz 60 ns tc Inductive Crossover Time 95 ns Maximum Collector-Source VCSW Voltage at Turn-off without hFE = 5, IC = 2 A 1100 V Snubber Gate-Source Leakage I V = ± 20 V 1nA GS(OS) Current GS VGS = 10 V, IC = 2 A, IB = 0.67 A, hFE = 3 0.202 V Collector-Source On VGS = 10 V, IC = 1 A, IB = 0.33 A, hFE = 3 0.111 V VCS(ON) Voltage VGS = 10 V, IC = 0.5 A, IB = 0.17 A, hFE = 3 0.067 V VGS = 10 V, IC = 0.3 A, IB = 0.06 A, hFE = 5 0.060 V μ VGS(th) Gate Threshold Voltage VBS = VGS, IB = 250 A 1.9 V Input Capacitance Ciss VCS = 25 V, f = 1 MHz 470 pF (VGS = VCB = 0) Gate-Source Change QGS(tot) VGS = 10 V, IC = 6.3 A, VCS = 25 V 9nC VCB = 0 VGS = 10 V, ID = 6.3 A 21 mΩ Static Drain-to-Source R V = 4.5 V, I = 5.5 A 26 mΩ DS(ON) On Resistance GS D VGS = 10 V, ID = 6.3 A, TJ = 125°C 30 mΩ Note: 6. A typical FDC655 MOSFET was used for the specifications above. Values could vary if other Fairchild MOSFETs are used. © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2145 Rev. 1.1 4 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — Typical Performance Characteristics 5 100 V = 5 V CE I = 1 A B 4 0.9 A 0.8 A 0.7 A 0.6 A 3 0.5 A 0.4 A 0.3 A 10 2 0.2 A 0.1 A NPN Power Transistor , DC CURRENT GAIN 125 oC 1 FE o h 25 C [A], COLLECTOR CURRENT C o I -25 C -40 oC 0 1 01234567 1E-3 0.01 0.1 1 10 V [V], COLLECTOR-EMITTER VOLTAGE I [A], COLLECTOR CURRENT CE C Figure 4. Static Characteristics Figure 5. DC Current Gain 10 10 HFE = 3 HFE = 5 1 1 0.1 0.1 o VOLTAGE (sat) [V], SATURATION o 125 C CE 125 C V o o (sat) [V],SATURATION VOLTAGE 25 C 25 C CE o o V - 25 C -25 C o o - 40 C -40 C 0.01 0.01 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 1 10 I [A], COLLECTOR CURRENT I [A], COLLECTOR CURRENT C C Figure 6. Collector-Emitter Saturation Voltage Figure 7. Collector-Emitter Saturation Voltage hFE = 3 hFE = 5 10 10 HFE = 10 HFE = 20 1 1 0.1 0.1 125 oC (sat) [V], SATURATION VOLTAGE SATURATION [V], (sat) (sat) [V], SATURATION VOLTAGE SATURATION [V], (sat) o 25 C CE CE o V V -25 oC 125 C o -40 oC 25 C 0.01 0.01 1E-3 0.01 0.1 1 10 1E-3 0.01 0.1 1 10 I [A], COLLECTOR CURRENT I [A], COLLECTOR CURRENT C C Figure 8. Collector-Emitter Saturation Voltage Figure 9. Collector-Emitter Saturation Voltage hFE = 10 hFE = 20 © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2145 Rev. 1.1 5 FJP2145 — ESBC™ Rated ESBC™ FJP2145 — Typical Performance Characteristics (Continued) 2.0 1000 1.8 [pF] 1.6 CB 1.4 100 1.2 1.0 [V], VOLTAGE [V], 0.8 CE V 0.6 10 I = 0.4 A C NPN Power Transistor 0.4 IC = 1 A I = 2 A C CAPACITANCE, Collector-Base 0.2 C IC = 3 A 0.0 1 0.01 0.1 1 1 10 100 1000 I [mA], BASE CURRENT COLLECTOR-BASE VOLTAGE[V] B Figure 10.
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