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(12) United States Patent (10) Patent No.: US 6,887,736 B2 Nause Et Al

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(12) United States Patent (10) Patent No.: US 6,887,736 B2 Nause Et Al USOO6887736 B2 (12) United States Patent (10) Patent No.: US 6,887,736 B2 Nause et al. (45) Date of Patent: May 3, 2005 (54) METHOD OF FORMING A P-TYPE GROUP 5,413.959 A 5/1995 Yamamoto et al. I-V SEMCONDUCTOR CRYSTAL LAYER 5,458,085 A * 10/1995 Kondo et al. .............. 148/33.6 ON A SUBSTRATE 5,468,678 A 11/1995 Nakamura et al. 5,603,778 A 2/1997 Sonoda 5,668,395 A * 9/1997 Razeghi...................... 257/441 (75) Inventors: Jeffrey E. Nause, Mableton, GA (US); 5,769,963 A * 6/1998 Fujioka et al. .............. 136/258 Joseph Owen Maciejewski, Mableton, 5,804.4662Y- - -2 A 9f1998 Arao et al. GA (US); Vincente Munne, Norcross, 5863326 A 1/1999 Nause et al. GA (US); Shanthi Ganesan, Smyrna, 5,882,805 A * 3/1999 Higa et al. ..... ... 428/689 GA (US) 5,897,332 A * 4/1999 Hori et al. .................... 438/61 5,900,060 A 5/1999 Nause et al. (73) Assignee: Cermet, Inc., Atlanta, GA (US) (Continued) (*) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 OTHER PUBLICATIONS U.S.C. 154(b) by 10 days. Minegishi et al, Growth of p-type Zinc Oxide Films by Chemical Vapor Depositions Article, Nov. 1, 1997, L 1453– (21) Appl. No.: 10/422,568 L 1455, vol. 36, Department of Electrical Engineering and (22) Filed: Apr. 23, 2003 Computer Science, Yamanashi University, 4 Takeda, Kofu. 400, Japan. (65) Prior Publication Data Yamamoto et al, Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO, Article, Feb. US 2004/0058463 A1 Mar. 25, 2004 15, 1999, L166-L169, vol. 38, Japanese Journal of Applied Related U.S. Application Data Physics, Japan. (60) Provisional application No. 60/391,507, filed on Jun. 24, (Continued) 2002. (51) Int. Cl." ........................ H01L 21/04; H01L 21/205 Primary Examiner Michael Lebentritt (52) U.S. Cl. ....................... 438/104; 438/503: 438/505 (74) Attorney, Agent, or Firm-Alston & Bird LLP 438,509 (57) ABSTRACT (58) Field of Search ................................. 438/478,479, 438/22, 47, 48, 104, 4, 46, 503–509 A method of depositing a p-type magnesium-, cadmium and/or Zinc-Oxide-based II-VI Group compound Semicon (56) References Cited ductor crystal layer over a SubStrate by a metalorganic U.S. PATENT DOCUMENTS chemical Vapor deposition technique. A reaction gas is Supplied to a Surface of a heated Substrate in a direction 4,272,754 A 6/1981 Lou parallel or oblique to the Substrate. The p-type magnesium-, 4,358,950 A 11/1982 Chang cadmium- and/or zinc-Oxide-based II-VI Group compound 4,358,951 A 11/1982 Chang Semiconductor crystal layer is grown on the heated 4,568.397 A : 2/1986 Hoke et al. Substrate, while introducing a pressing gas Substantially in a 2. A 18 E. "a - - - - - - - - - - - - - 136/265 Vertical direction toward the Substrate to press the reaction 4.881,9792 2 A 11/1989 LewisOSa ........................ e a gas against the entire surface of the substrate. 5,157,136 A * 10/1992 Arnold et al. .. 5,369,290 A 11/1994 Kawasaki et al. .......... 257/103 28 Claims, 2 Drawing Sheets Metc. For Forms P-TYPE2INC-oxide-Based CRYSTALLINESEMCONUCFRAYRON SUBSTRATE PLACE SUBSRAEN Sf- CHAMBER AYERGROWT CMPETE SEAL SUBSTRATE N S2- CHAMBER STOP FLOWS OFZIN CONTAINING GASANO ROATESUBSTRATEAT ANY MAGNESUMAND ARGETSPEED CAMIUM-CTANNs GASEs, ANDoPAN GAS S4- HEATSUBSTRATE TO Arset teNPErATURE - STOPHEATING SUPPLYZINC-AND OPTIONAMASNESUM AND CADMUM STOPGASFLOW -S1 CONTAINING GAS, oxycsN-contAINING GAS, ANDOPANTGAS STPROTATION OF -S11 SUBSTRATE SUBSTRATE PTIONALLY SIN3 Carrier Ass At TARGET FOW RAES EWACUATE CHAMBER S12 - H - exhaus chiAMber GASESATARATETO EXTRACTSUBSTRATE MANTANTARGET With ano-BASEAYERS13 PRESSURE Ford Heron US 6,887,736 B2 Page 2 U.S. PATENT DOCUMENTS Goodings et al., “A new inlet area design for horizontal 6,045,626 A 4/2000 Yano et al. movpe reactors”,Journal of Crystal Growth 96, (1989), pps. 6,057,561. A 5/2000 Kawasaki et al. ............ 257/94 13-18. 6,147,747 A 11/2000 Kavaya et al. Zembutsu & Sasaki, “Growth of GaN crystal films using 6,181,723 B1 1/2001 Okubo et al. ................. 372/45 electron cyclotron resonance plasma excited metalorganic 6,261,862 B1 7/2001 Hori et al. .................... 438/96 vapor phase epitaxy”, Appl. Phys. Lett. 48, (13), Mar. 13, 6,291,085 B1 9/2001 White et al. 6,329,216 B1 12/2001 Matsumoto et al. .......... 438/47 1986, pps. 870–872. 6,342,313 B1 1/2002 White et al. * Ohki et al., “Fabrication and properties of a practical 6,407,405 B1 6/2002 Sano et al. blue-emitting GaN m-I-S diode.” Ins. Phys. Conf. Ser. No. 6,410,162 B1 6/2002 White et al. 63, Chapter 10, Paper presented at Int Symp. GaAs and 6,472.241 B2 10/2002 Iwata et al. Related compounds, Japan 1981. 6,475.825 B2 * 11/2002 White et al. ................ 438/104 6,479,801 B1 11/2002 Shigeoka et al. Jianhua Hu and Roy G. Gordon, “Atmospheric pressure 6,491,884 B1 * 12/2002 Faller et al. ................ 423/210 chemical vapor deposition of gallium doped Zinc oxide thin 6,506.994 B2 1/2003 Wang et al. films from diethyl Zinc, water, and triethyl gallium, J. Appl. 6,509,555 B1 1/2003 Riess et al. Phys. Vol. 72, No. 11, Dec. 1, 1992, pp. 5381–5392. 6,521,550 B2 2/2003 Tanabe et al. 6,524,428 B2 2/2003 Tamura et al. G.S. Tompa, Y. Li, D. Bingaman, M. Migliuolo and J. Doyle, 6,527,858 B1 3/2003 Yoshida et al. “ZnO: MOCVD processing and material applications.” 6,528,431 B2 3/2003 Tanabe et al. Materials Technology ZnOpaper.doc, Feb. 11, 1997, pp. 6,531408 B2 3/2003 Iwata et al. 1-17, Piscataway, NJ. 6,559,736 B2 * 5/2003 Lu et al...................... 333/152 6,620,709 B2 * 9/2003 Kapolnek et al. ........... 438/478 G.S. Tompa, L.G. Provost, and J. Cuchiaro, “Metal Organic 6,621,192 B2 9/2003 Lu et al. ................. 310/313 A Chemical Vapor Deposition of Oxide Films for Advanced 6,673,478 B2 1/2004 Kato et al. .................. 428/698 Applications,” Transparent Conductive Oxides, Jun. 19-20, 2002/0028571 A1 3/2002 Cheung 2000, pp. 1-12, Denver, Co. 2003/0011047 A1 1/2003 Cunningham et al. C.R. Gorla, N.W. Emanetoglu, S. Liang, W.E. Mayo, and Y. OTHER PUBLICATIONS Lu, "Structural, optical, and Surface acoustic wave proper Amano et al, Metalorganic Vapor Phase Epitaxial Growth of ties of epitaxial ZnO films grown on (0112) sapphire by a High Quality GaN Film Using an AIN Buffer Layer, metalorganic chemical vapor deposition,” Journal of Article, Feb. 3, 1986, 353–355, vol. 48, American Institute Applied Physics, vol. 85, No. 5, Mar. 1, 1999, pp. of Physics, Japan. 2595–2602, Piscataway, NJ. Hashimoto, “Effects of hydrogen in an ambient on the Y. Liu, C.R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, crystal growth...", Journal of Crystal Growth 68, (1984), and M. Wraback, “Ultraviolet Detectors Based on Epitaxial pps. 163-168. ZnO Films Grown by MOCVD,” Journal of Electronic Woelk & Beneking, “A novel movpe reactor with a rotating Materials, vol. 29, No. 1, 2000, pp. 69-74, Piscataway, NJ. substrate”, Journal of Crystal Growth 93, (1988), pps. 216-219. * cited by examiner U.S. Patent May 3, 2005 Sheet 2 of 2 US 6,887,736 B2 METHOD FOR FORMING P-TYPE ZINC-OXDE-BASED CRYSTALLINE SEMCONDUCTORLAYER ON SUBSTRATE PLACE SUBSTRATE IN S1 CHAMBER LAYER GROWTH COMPLETE SEAL SUBSTRATE IN S2 CHAMBER STOP FLOWS OF ZINC CONTAINING GAS AND ROTATE SUBSTRATEAT ANY MAGNESIUMAND S3 S8 TARGET SPEED CADMUM-CONTAINING GASES, AND DOPANT GAS HEAT SUBSTRATE TO S4 TARGET TEMPERATURE STOP HEATING SUPPLY ZINC-AND OPTIONAL MAGNESUM AND CADMUM STOP GAS FLOW S10 CONTAINING GAS, OXYGEN-CONTAINING S5 GAS, AND DOPANT GAS STOP ROTATION OF S11 TO SUBSTRATE SUBSTRATE OPTIONALLY USING CARRIER GASESAT TARGET FLOWRATES EVACUATE CHAMBER S12 EXHAUST CHAMBER EXTRACT SUBSTRATE S6 GASES AT ARATE TO MANTAN TARGET WITH ZnO-BASED LAYER S13 PRESSURE FORMED THEREON FIG. 2 US 6,887,736 B2 1 2 METHOD OF FORMING A P-TYPE GROUP carrier hydrogen and exceSS Zn in Source ZnO powder. I-V SEMCONDUCTOR CRYSTAL LAYER When a Zn/ZnO ratio of 10 mol % was used, secondary ion ON A SUBSTRATE mass spectrometry (SIMS) confirmed the incorporation of nitrogen into the ZnO film, although the nitrogen concen CROSS-REFERENCE TO RELATED tration was not precisely confirmed. Although the films APPLICATION prepared by Minegishi et al. using a Zn/ZnO ratio of 10 mol This patent application is a U.S. nonprovisional applica % appear to incorporate a Small amount of nitrogen into the tion filed pursuant to Title 35, United States Code SS 100 et ZnO film and convert the conduction to p-type, the resis seq. and 37 C.F.R. Section 1.53(b) claiming priority under tivity of these films is too high for application in devices Title 35, United States Code S 119(e) to U.S. provisional such as LEDs or LDs. Also, Minegishi et al. report that the application No. 60/391,507 filed Jun. 24, 2002 naming as carrier density for the holes is 1.5.x10' holes/cm, which is inventors Jeffrey E. Nause, Joseph Owen Maciejewski, and considered to be too low for use in commercial light emitting Vincente Munne as inventors. Both the subject application diodes or laser diodes.
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