IEEE Electron Devices Society

Awards to be

presented during the virtual

2020 IEEE International Electron Devices Meeting

December 2020



2020 IEEE Electron2014 Devices Society IEEE ElectronAward RecipientsDevices Society Award Recipients IEEE EDS Fellows - Class of 2020 EDS Paul Rappaport Award EDSEDS George J.J. Ebers E. Smith Award Award JoachimEDS Leo N. Esaki Burghartz Award EDS Distinguished Service Award EDSProfessor Education Jacobus W. Award Swart EDS Education Award Juin J. Liou Professor Chennupati Jagadish (2019) & Professor V. Ramgopal Rao EDS Lester F. Eastman Award EDS DistinguishedProfessor Asif Service Khan Award EDS J.J.Yuan Ebers Taur Award Professor Arokia Nathan EDS Celebrated Member Professor Robert W. Dutton 

EDS MEMBERS ELECTED FELLOW 20142020 IEEE Fellow is a distinction reserved for select IEEE IEEEmembers Electron whose extraordinary Devices accomplishments Society in any of theAward IEEE fields of Recipients interest are deemed fitting of this prestigious grade elevation.

Only lists IEEE/EDS Fellows that would like to be recognized at the 2020 IEDM EDS J.J.Geoffrey Ebers Burr Award Ting-chang Chang JoachimChion N. ChuiBurghartz Barbara De Salvo Muhammad Hussain EDS EducationBenjamin Iniguez Award JuinMartin J. Kuball Liou Wallace Lin Po-tsun Liu EDS DistinguishedDurgamadhab Service Misra Award Bich-yen Nguyen ShoulehYuan TaurNikzad Byung-gook Park Ravi Todi  

2014 IEEE Electron Devices Society Award Recipients EDS PAUL RAPPAPORT AWARD

The Paul Rappaport Award was established in 1984 to recog- nize the best EDSpaper appearingJ.J. Ebers in a fastAward turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE TransactionsJoachim on Electron N. Burghartz Devices.

Winning Paper: EnhancedEDS Reliability Education of 7nm Process Award Technology Featuring EUV Juin J. Liou Authors: Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, EDSSoonyoung Distinguished Lee, Hyewon Shim, Service Junekyun Award Park, YoungWoo Cho, HwaYuan Sung Taur Rhee and Sangwoo Pae  

2014 IEEE Electron Devices Society Award Recipients EDS GEORGE E. SMITH AWARD

The George E. Smith Award was established in 2002 to rec- ognize the bestEDS paper J.J.appearing Ebers in a fastAward turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE ElectronJoachim Device Letters. N. Burghartz

Winning Paper: "Large-AreaEDS 1.2-kV Education GaN Vertical Award Power FinFETs With a Record Switching Figure of Merit" Juin J. Liou Authors: Yuhao Zhang, Min Sun, Josh Perozek, Zhihong Liu, Anmad Zubair, Daniel Piedra, Nadim Chowdhury, EDSXiang Distinguished Gao, Kenneth Shepard Service and Tomas Palacios Award Yuan Taur  

2014 IEEE Electron Devices Society Award Recipients EDS LEO ESAKI AWARD

The EDS Leo Esaki Award was established in 2019 to recog- nize the best paperEDS appearing J.J. Ebers in a fast Award turn around archival publication of the IEEE Electron Devices Society, targeted to the IEEE JournalJoachim of Electron DevicesN. Burghartz Society.

Winning Paper: FerroelectricEDS HfO2 Education Tunnel Junction Award Memory with High TER and Multi-level Operation Featuring Metal JuinReplacement J. Liou Process

Authors: Masaharu Kobayashi, Yusaku Tagawa, Fei Mo, EDS DistinguishedTakuya Saraya and Toshiro Service Hiramoto Award Yuan Taur  

EDS DISTINGUISHED SERVICE AWARD The EDS Distinguished Service Award was established in 1993 by the IEEE Electron2014 Devices Society. The Award is presented annually and is intended to recognize and honor outstanding service to the Electron IEEEDevices ElectronSociety and its sponsored Devices activities. Society PREVIOUSAward AWARD Recipients WINNERS 1994 Friedolf M. Smits 1995 Lewis M. Terman 1996 Alfred U. Mac Rae 1997 George E. Smith 1998EDS J.J. W. EbersDexter Johnston, Award Jr. 1999 John R. Brews 2000Joachim Michael N. BurghartzS. Adler 2001 H. Craig Casey, Jr. 2002 Lucian A. Kasprzak 2003 Frederick H. Dill 2004 Louis C. Parrillo EDS2005 Education Cary Y. Yang Award 2006 Steven J. Hillenius 2007Juin Richard J. S.Liou Muller 2008 Hiroshi Iwai 2009 Tak H. Ning 2010 Marvin H. White 2011 Ilesanmi Adesida EDS Distinguished2012 Douglas P. ServiceVerret Award 2013 Cor L. Claeys 2014Yuan Yuan Taur Taur 2015 - 2016 Renuka P. Jindal 2017 Paul K.L. Yu 2018 Shuji Ikeda 2019 Albert Z. H. Wang 

2020 EDS DISTINGUISHED SERVICE AWARD RECIPIENT PROFESSOR 2014JACOBUS W. SWART Jacobus W. Swart received his B. Engineering and Dr. Engineering De- grees in 1975 and 1981 respectively, from the Polytechnic School of the IEEE ElectronUniversity of São Paulo, Devices Brazil. After his Dr. Degree, Society he worked at the following institutions: K. U. Leuven, Belgium, 1982-83, as a pos-doc.; AwardCTI, Campinas, 1984; Recipients University of São Paulo, 1985-88, as Assistant Professor; SID Microeletrônica, 1986, as process engineering; RTI, USA, 1991, as a Visiting Scientist and since 1988 at State University of Camp- inas, as Full Professor until retirement in 2013, when he assumed a po- sition as collaborator professor. He served as director of the Center for Semiconductor Components, from April 1998 to April 2005. From May 2007 until June 2011 he was on leave from theEDS University J.J. to serve Ebers as General Director Award of CTI, a national research cen- ter. During this time he was the coordinator of the IC Brazil program, leading ASIC design training centers and a network of local design houses. He was the leader of a large research network in Brazil, calledJoachim INCT NAMITEC, from N. 2001 Burghartz until 2016. Since 2013 he provides service to imec, Belgium, as their representative in Brazil. Dr Swart has published around 300 papers in Journals and Conferences covering his reseach work on materials, fabrication processing, device characterization and modelling and ASIC design. He is ranked as fellow researcher, level 1A (highest) atEDS CNPq and isEducation a Fellow of the São Paulo Award State Academy of Science and of National Engineering Academy.

He is a Life Fellow of IEEE and servedJuin on different J. Liou positions for EDS, as secretary, BoG mem- ber, Distinguished Lecturer, member of many committees, Region 9 Subcommittee for Re- gions and Chapters (SRC) Chair, founder and chair of South Brazil EDS chapter and advisor of EDS student chapter at UNICAMP. He was member and/or chair of many organizing conference committees in Region 9, especially in Brazil, including conferences as SBMicro, ICCDCS and LAEDC.EDS He was presidentDistinguished of SBMicro Sociedty for two Service terms, and promoted Award the SBMicro con- ference as a technically co-sponsered conference of EDS. Yuan Taur Jacobus was born in The Netherlands in 1950 and emigrated to Brazil with his parents and ten brothers and sisters in 1958, as farmers. He was the only one that did not followed the farm- ing profession. He met and married Nilza during undergraduate studies and they have three children: Hugo, Laura and Julia, two Electronics Engineers and one Economist. Presently, he and Nilza are blessed with ten grandchildren. 

PROFESSOR JACOBUS W. SWART KEY POSITIONS HELD EDS/IEEE Service Activities 2014 2002-2006 EDS South-Brazil Chapter Chair 2003-Present EDS UNICAMP Student Chapter Advisor IEEE2004-Present Electron EDS Distinguished Lecturer Devices Society 2006-2008 EDS Newsletter co-Editor 2006-2015Award EDS Membership Committee Recipients Member 2007-2016 EDS Education Committee Member 2008 ICCDCS Program Chair 2008-2011 EDS Region 9 Subcommittee for Regions and Chapters (SRC) Member 2012-2017 EDSEDS Region 9 J.J.Subcommittee Ebers for Regions Award and Chapters (SRC) Chair 2012-2017 EDS Region 9 Outstanding Student Paper Award Committee Chair 2013-2017 EDSJoachim VLSI Technology and N. Circuits Burghartz Technical Committee Member 2014-2015 EDS Constitution & Bylaws Review AdHoc Committee Chair 2014-2016 EDS BoG Elected Member 2014-2017 EDS Awards Committee Member 2016-PresentEDS IEEE Cledo BrunettiEducation Award Committee MemberAward 2017-2019 EDS BoG Elected Member 2017-2019 EDS Fellow EvaluationJuin Committee J. Liou Member 2018-2019 EDS Secretary 2018-2019 EDS Newsletter Committee Chair 2018-2019 EDS Early Career Award Committee Member 2018-2019EDS Distinguished EDS Publication Committee Member Service Award 2018-2019 IEEE Cledo Brunetti Award Committee Chair 2019-Present LAEDC OrganizingYuan Committee Taur Member 2020-Present EDS Region 9 Outstanding Student Paper Award Committee Member 2001-2008 SBMicro Organizing Committee Member 2020 SBMicro General Chair 

EDUCATION AWARD The EDS Education Award2014 was established in 2006 by the IEEE Electron Devices Society. IEEE Electron Devices Society The Award is presented annually and is intended to recognize Awarddistinguished Recipients contributions to education within the fields of interest of the IEEE Electron Devices Society. EDS J.J. Ebers Award PREVIOUS AWARD WINNERS 2006Joachim Mark N. S. BurghartzLundstrom 2007 Meyya Meyyappan 2008 Robert W. Dutton 2009EDS Education David L. Pulfrey Award 2010 Sorab K. Ghandhi Juin J. Liou 2011 Chenming Hu 2012 Jesús Del Alamo EDS2013 Distinguished Charvaka DuvvuryService Award 2014 Juin J. Liou 2015 RogerYuan T. Taur Howe 2016 Hiroshi Iwai 2017 Mansun Chan 2018 Muhammad Ashraful Alam 

2019 EDUCATION AWARD RECIPIENT PROFESSOR CHENNUPATI JAGADISH “For distinguished and sustained2014 contributions globally to education, training and mentoring in the field of interest of the IEEE Electron Devices Society”

IEEE ElectronProfessor Chennupati Devices Jagadish is a Distinguished Society Professor and Head of Semiconductor Optoelectronics and Nanotech- Awardnology Group inRecipients the Research School of Physics and Engi- neering, Australian National University. He has served as Vice-President and Secretary Physical Sciences of the Aus- tralian Academy of Science during 2012-2016. He is currently serving as President of IEEE Photonics Society, Past President EDSof Australian J.J. Materials Ebers Research Award Society. Prof. Jagadish is an Editor/Associate editor of 5 Journals, 3 book series and serves on editorial boards of 19 other journals. Joachim He has published N. more Burghartz than 920 research papers (640 jour- nal papers), holds 5 US patents, co-authored a book, co-edited 17 books and ed- ited 12 conference proceedings and 17 special issues of Journals. He won the 2000 IEEE Millennium Medal and received Distinguished Lecturer awards from IEEE NTC, IEEE Photonics Society and IEEE EDS. He is a Fellow of the Australian Academy of Science, AustralianEDS Academy Education of Technological Sciences Award and Engineering, The World Academy of Sciences, US National Academy of Inventors, Indian National Science Academy, Indian National AcademyJuin of Engineering, J. Liou Indian Academy of Science, Eu- ropean Academy of Sciences, Andhra Pradesh Akademi of Science, IEEE, APS, MRS, OSA, AVS, ECS, SPIE, AAAS, FEMA, APAM, IoP (UK), IET (UK), IoN (UK) and the AIP. He received many awards including IEEE Pioneer Award in Nanotechnology, IEEE Pho- tonicsEDS Society Distinguished Engineering Achievement Award, Service OSA Nick Holonyak Award Jr Award, Welker Award, IUMRS Somiya Award, UNESCO medal for his contributions to the de- velopment of nanoscience and nanotechnologies and Lyle medal from Australian Academy of Science for his contributionsYuan Taurto Physics. He has received Australia’s highest civilian honor, AC, Companion of the Order of Australia, as part of 2016 Aus- tralia day honors from the Governor General of Australia for his contributions to physics and engineering, in particular nanotechnology. 

2020 EDUCATION AWARD RECIPIENT PROFESSOR VALIPE RAMGOPAL RAO “For educational leadership and establishing nanoelectronics2014 research programs in India”

IEEE ElectronProf. V. Ramgopal Rao Devices is currently the Director atSociety IIT Delhi. Before joining IIT Delhi as the Director in April 2016, Dr. Rao served as a P. K. Kelkar Chair Professor for Nanotechnology in the Department of Electrical Engineer- Awarding, IIT Bombay. Dr. RecipientsRao has over 450 research publications in the area of nano-scale devices & sensors and is an inventor on 45 patents and patent applications. For his research contributions, Dr. Rao is elected a Fellow of IEEE, a Fellow of the Indian National Academy of Engineering, the Indian Academy of Sciences, the National Academy of Sciences, and the Indian National Science Academy. Prof. Rao's work is recognized with many awards and honors in EDSthe country J.J. and abroad. Ebers Prof. Rao wasAward an Editor for the IEEE Transactions on Electron Devices during 2003-2012 for the CMOS Devices and Technology area and currently serves on the Editorial Advisory Board of ACS Nano Letters. He is a Distinguished Lecturer, IEEE Electron Devices SocietyJoachim and interacts closely N. with Burghartz many semiconductor industries both in India and abroad.

Prof. Ramgopal Rao has helped create a vibrant ecosystem for nanoelectronics education, re- search and entrepreneurship in India. Prof. Rao was the Chief Investigator for the path-breaking Center of ExcellenceEDS in Nanoelectronics Education (CEN) project at IIT AwardBombay, set up jointly with IISc Ban- galore, by the Government of India. Prof. Rao was also the architect and the Chief Investigator for the Indian Nanoelectronics Users Program (INUP), which initiated Nanoelectronics activities in over 200 institutions in the country. TheJuin INUP program J. Liou has impacted the research activities of over 10000 researchers in India so far.

Prof. Rao played a key role in driving the emergence of a vital industry-academia collaboration in India through the Ministry of Electronics & Information Technology (MeitY) and the Department of ScienceEDS & Technology, Distinguished Govt. of India programs. Based Service on his leadership Award in education and re- search and through his involvement with the institutes in formulating the proposals, MeitY has set up seven National Centres of Excellence in the field of Nanoelectronics across the country, leading to a significant growth of thisYuan vital sector Taur in India. Prof. Rao is also responsible for set- ting up the country’s first Prototype Manufacturing Facility at IIT Bombay for use by the Small & Medium scale industries for developing products and prototypes in the area of Nanoelectronics.

For more information about Prof. Ramgopal Rao’s current research activities, please visit https://www.ee.iitb.ac.in/~rrao/.  

2014 IEEE Electron Devices Society Award Recipients

EDS LESTER F. EASTMAN AWARD

The Lester F.EDS Eastman J.J. Award Ebers was Award established in 2019 by the IEEE Electron Devices Society. It is intended to recognize individualsJoachim with N. outstanding Burghartz achievement in high-performance semiconductor devices. EDS Education Award Juin J. Liou

EDS Distinguished Service Award Yuan Taur  

2020 EDS LESTER F. EASTMAN AWARD RECIPIENT PROFESSOR2014 ASIF KHAN “For outstanding achievement in high-performance semiconductor devices”

IEEE ElectronAsif Khan is a Carolina Devices Distinguished Professor inSociety the Electrical Engineer- ing Department at University of South Carolina. From 1979 to 1985 he worked at Honeywell Inc. in Minneapolis Minnesota as a Senior Principal AwardResearch Scientist. Recipients There, he initiated research in MOCVD growth and fab- rication of AlxGa1-xN solar-blind UV sensors. From 1985 to 1987 he worked in the Optical recording project at 3M Corporation in Saint Paul Minnesota. For the next 10 years (1987-1997) he served as the Vice President of the Op- toelectronics Division of APA Optics in Blaine Minnesota. Since 1997 he is EDSworking atJ.J. the University Ebers of South AwardCarolina (USC). His research at APA Optics and South Carolina resulted in the first demonstrations of high-quality AlGaN-GaN heterostructures exhibiting 2-Dimensional Electron Gas (2-DEG). This enabled him and his teams to demonstrateJoachim for the first time allN. the keyBurghartz fundamental building blocks for the fields of III-N High Frequency and High-Power Electronics and Deep Ultraviolet Light Emitting Diodes (LEDs). These first demonstrations included: (i) GaN MESFETs (1992); (ii) 2-Dimensional Electron Gas in GaN- AlGaN Heterojunctions (1992); (iii) GaN-AlGaN High Electron Mobility Transistor (HEMT) (1993); (iv) GaN-AlGaN Insulated-Gate High Electron Mobility Transistor (MOS-HEMT) (1999); (v) AlInGaN-based Ultra-Violet B/Ultra-VioletEDS C (UVB/UVC) Education LEDs (2001); and (vi) High Award power sub-280 nm UVC LEDs (2002). More recently, his South Carolina group has pioneered novel ultra-high voltage Ultrawide Bandgap AlGaN-channel HEMTs and integrated photonic circuits using AlxGa1-xN-based UVC LEDs, photode- tectors, and waveguides. Juin J. Liou

Asif was also the founding member of two South Carolina small businesses which commercialized the technology that his South Carolina research group developed. These businesses, Nitek Inc. and Sensor Electronic Technology Inc. have now been acquired by Seoul Semiconductor and Seoul Viosys CompanyEDS and function Distinguished as their subsidiary in the US. HeService is also the recipient Award of the University of South Carolina Russell Research Award for Science and Engineering (2002) and the State of South Carolina Governors Award for ExcellenceYuan in Scientific Taur Research (2015). Asif received his B.Sc. (Hons) and M.Sc. degrees from the University of Karachi and his Ph.D from MIT. He is a Fellow of the IEEE and serves as a member of International advisory committee of the In- ternational Workshop on Nitride Semiconductors (IWN) and the International Conference on Nitride Semiconductors, the two major gatherings of the III-Nitride research community. He lives with wife Rubina in Irmo South Carolina.  

EDS J.J. EBERS AWARD

The J.J. Ebers Award was established in 1971 by the IEEE Electron Devices Society. It is in- tended to foster progress in2014 electron devices and to commemorate the life activities of JewellIEEE James Electron Ebers, whose Devices distinguished Society contributions, particularly in the transistor art, shaped the understandingAward andRecipients technology of electron devices. The award is intended to J.J. EBERS 1921 – 1957 recognize and honor accomplishments of un- usual merit in the electron device field and is given for out- standing technicalEDS contributions J.J. Ebers to electron Award devices. PREVIOUSJoachim AWARD N. Burghartz WINNERS 1971 John L. Moll 1995 Martin A. Green 1972 Charles W. Mueller 1996 Tetsushi Sakai 1973 Herbert Kroemer 1997 Marvin H. White 1974 Andrew S. Grove 1998 B. Jayant Baliga 1975 Jacques I. Pankove 1999 James T. Clemens 1976 MarionEDS E. Hines Education2000 Award Bernard S. Meyerson 1977 Anthony E. Siegman 2001 Hiroshi Iwai 1978 Hung C. Lin 2002 Lester F. Eastman 1979 James M. Early 2003 James D. Plummer 1980 James D. MeindlJuin J. Liou2004 Jerry G. Fossum 1981 Chih-Tang Sah 2005 Bijan Davari 1982 Arthur G. Milnes 2006 Ghavam G. Shahidi 1983 Adolf Goetzberger 2007 Stephen J. Pearton 1984 Izuo Hayashi 2008 Mark R. Pinto 1985 Walter F. Kosonocky 2009 Baruch Levush 1986EDS PallabDistinguished K. Chatterjee 2010 Service Mark E. AwardLaw 1987 Robert W. Dutton 2011 Stuart Ross Wenham 1988 Al F. Tasch, Jr. 2012 Yuan Taur 1989 Tak H. Ning Yuan Taur2013 Nobukazu Teranishi 1990 Yoshiyuki Takeishi 2014 Joachim N. Burghartz 1991 Simon M. Sze 2015 Jack Yuan-Chen Sun 1992 Louis C. Parrillo 2016 Jaroslav Hynecek Richard S. Payne 2017 Kang L. Wang 1993 Karl Hess 2018 Michael Shur 1994 Alfred U. Mac Rae2019 H.-S. Philip Wong 

2020 EDS J.J. EBERS AWARD RECIPIENT PROFESSOR AROKIA NATHAN “For contributions2014 to thin film transistors and flexible/foldable electronics integration strategies”

IEEE ElectronArokia Nathan is a leading Devices pioneer in the development Societyand application of thin film transistor technologies to flexible electronics, display and sensor systems. In a re- search career spanning over thirty years, he has had a profound impact on the de- Awardsign and development Recipients of TFT circuit architectures that greatly enabled the realization of commercial OLED displays, high-resolution image sensors, and large area 3D touch sensor systems. His research has resulted in 600 publications in- cluding 4 books. A prolific inventor, his ideas led to over 110 patents and the estab- lishment of four companies to commercialize the technology: IGNIS Innovation developing fully-compensated TFT-OLED rigid and flexible displays, Cambridge Touch Technologies on 3D smart-skin for human-machine interactivity, ACXEL Technology on high-resolution digital fluidics for in-vitro and single-cellEDS diagnosis, J.J. and EbersCamXT on TFT compact Award modeling and parameter extraction.

Following his PhD in Electrical Engineering, University of Alberta, Canada in 1988, he joined LSI Logic USA work- ing on advanced multi-chip packaging.Joachim Subsequently N. he was Burghartz at the Institute of Quantum Electronics, ETH Zürich, Switzerland, before joining the Electrical and Computer Engineering Department, University of Waterloo, Canada. Here he held the DALSA/NSERC Industrial Research Chair in sensor technology and then the Canada Research Chair in nano-scale flexible circuits, and in 2000 led the establishment of the Giga-to-Nanoelectronics Centre. In 2006, he joined the London Centre for Nanotechnology, University College London as the Sumitomo Chair of Nanotechnology. He movedEDS to Cambridge Education University in 2011 as the Chair Award of Photonic Systems and Displays, and directed a large multi-disciplinary research team on heterogeneous integration of sensors, TFTs and energy de- vices for wearable technologies. He is currently a Bye-Fellow and Tutor at Darwin College, University of Cam- bridge. Juin J. Liou

In recognition for his role in TFT technology and flexible electronics, he was awarded the NSERC E.W.R. Steacie Fellowship in 2001, the Royal Society Wolfson Research Merit Award 2006, and the BOE Distinguished Contribu- tion Award for TFT Compact Modeling and Circuit Design 2016. He was a China 1000 Talent Plan Laureate 2013 and received the Jiangsu Friendship Award 2014. In 2019, the University of Waterloo bestowed upon him Doctor of ScienceEDS honoris Distinguishedcausa in recognition for his leadership inService undergraduate program Award development in Nan- otechnology Engineering.

Arokia Nathan had leadership roles in IEEE Yuanwith service Taurto EDS, Photonics Society and the Solid State Circuits Society. He served on the Board of Governors of EDS and on Editorial Boards of IEEE Proceedings, IEEE Trans. Devices, Materials, and Reliability, and IEEE Electron Device Letters. He also served as Editor-in-Chief of IEEE/OSA Journal of Display Technology and as Guest Editor for a two-part Special Issue on Flexible Electronics Technol- ogy in the Proceedings of the IEEE in 2004. He is a Fellow of IEEE (USA), an IEEE/EDS Distinguished Lecturer, a Chartered Engineer (UK), and Fellow of the Institution of Engineering and Technology (UK). 

EDS CELEBRATED MEMBER

The EDS Celebrated Member2014 was established in 2010 by the IEEE Electron Devices Society. It is intended to IEEErecognize Electron and honor legendary Devices individuals Society in the field of electronAward devices. Recipients

PREVIOUSEDS J.J.CELEBRATED Ebers Award MEMBERS

2010Joachim George E. SmithN. Burghartz 2011 Herbert Kroemer 2012EDS Chih-Tang Education Sah Award Leo Esaki 2015 B. JayantJuin Baliga J. Liou Robert H. Dennard 2016 Mildred Dresselhaus EDS2017 Distinguished Gordon E. Moore Service Award Simon M. Sze Yuan Taur 2018 Martin Green 2019 Leon Chua  

EDS CELEBRATED MEMBER PROFESSOR ROBERT W. DUTTON “For fundamental contributions2014 to the field of electron devices for the benefit of humanity”

IEEE ElectronRobert W. Dutton Devicesreceived the B.S., M.S., Societyand Ph.D. in Electri- cal Engineering degrees from the University of California, AwardBerkeley, in 1966, Recipients 1967, and 1970, respectively.

He is currently Robert and Barbara Kleist Professor of Elec- trical Engineering at Stanford University, and Associate Chair for UndergraduateEDS Education. J.J. He hasEbers held summer Award staff positions at Fairchild, Bell Telephone Laboratories, Hewlett-Packard, IBM Research, and Matsushita dur- ing 1967, 1973, 1975, 1977,Joachim and 1988 respectively. N. Burghartz His research interests focus on integrated circuit process, device, and circuit technologies, especially the use of computer-aided design (CAD) and parallel computational methods. He has pub- lished more than 200 journal articles and graduated more than four dozen doc- torate students. EDS Education Award Dr. Dutton was Editor of the IEEEJuin Transactions J. Liou on Computer Aided Design from 1984 to 1986, the winner of the 1987 IEEE J. J. Ebers Award, 1988 Guggenheim Fel- lowship to study in Japan, elected to the National Academy of Engineering in 1991, 1996 Jack A. Morton Award, 2000 C&C Prize Japan, University Researcher Award,EDS Semiconductor Distinguished Industry Association (2000),Service Phil Kaufman Award Award, Elec- tronic Design Automation Consortium (2006), and 2014 Bass University Fellow in Undergraduate Education Program,Yuan Stanford Taur University.  IEEE EDS Executive Office 445 Hoes Lane Piscataway, NJ 08854 Tel: +1 732 562 3927 Fax: +1 732 235 1626 E-Mail: [email protected] Web: www.ieee.org/eds