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1 Analytical Design and Numerical Verification of P Analytical Design and Numerical Verification of p- Channel Strained Silicon-Germanium Hetero MOSFET Item Type text; Electronic Dissertation Authors Gopal, Mohan Krishnan Publisher The University of Arizona. Rights Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. Download date 28/09/2021 14:14:00 Link to Item http://hdl.handle.net/10150/195905 1 ANALYTICAL DESIGN AND NUMERICAL VERIFICATION OF P-CHANNEL STRAINED SILICON-GERMANIUM HETERO MOSFET by Mohan Krishnan Gopal Copyright Mohan Krishnan Gopal 2008 A Dissertation Submitted to the Faculty of the DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING In Partial Fulfillment of the Requirements For the Degree of DOCTOR OF PHILOSOPHY In the Graduate College THE UNIVERSITY OF ARIZONA 2008 2 THE UNIVERSITY OF ARIZONA GRADUATE COLLEGE As members of the Dissertation Committee, we certify that we have read the dissertation prepared by Mohan Krishnan Gopal entitled “Analytical Design and Numerical Verification of p-Channel Strained Silicon-Germanium Hetero MOSFET” and recommend that it be accepted as fulfilling the dissertation requirement for the Degree of Doctor of Philosophy ________________________________________________________________ ____ Date: November 25, 2008 John R. Brews, Ph.D. _____________________________________________________________________ Date: August 1, 2008 Harold G. Parks, Ph.D. _____________________________________________________________________ Date: August 1, 2008 Olgierd A. Palusinski, Ph.D. Final approval and acceptance of this dissertation is contingent upon the candidate’s submission of the final copies of the dissertation to the Graduate College. I hereby certify that I have read this dissertation prepared under my direction and recommend that it be accepted as fulfilling the dissertation requirement. _____________________________________________ Date: November 25, 2008 Dissertation Director: John R. Brews, Ph.D. 3 STATEMENT BY AUTHOR This dissertation has been submitted in partial fulfillment of requirements for an advanced degree at The University of Arizona and is deposited in the University Library to be made available to borrowers under rules of the library. Brief quotations from this dissertation are allowable without special permission, provided that accurate acknowledgement of source is made. Requests for permission for extended quotation from or reproduction of this manuscript in whole or in part may be granted by the copyright holder. SIGNED ----------------------------------------- Mohan Krishnan Gopal 4 ACKNOWLEDGEMENTS My profuse thanks go to Dr. John R. Brews for his tremendous patience with my intermittent progress. Apart from that I am extremely thankful to Prof. Brews for his technical advice, technical help and personal concern during the latter days of my dissertation. My sincere thanks go to Dr. Harold G. Parks and Dr. Olgierd A. Palusinski for reviewing my dissertation and agreeing to be members of my examination committee. I am very grateful to Dr. Kelly S. Potter for agreeing to be in the examination committee representing College of Optical Sciences, my minor department. I am sincerely thankful to Dr. Carl F. Maes of the College of Optical Sciences for his sympathetic attitude and all the help he has offered. I am very thankful to Dr. Thomas C. Cetas for making me part of the Microwave Hyperthermic Oncology research group and supporting me for many years. I would like to thank Dr. Mark A. Neifeld for his technical advice and support while doing research with amorphous silicon for few years. I am grateful to Dr. Jeffrey J. Rodriguez for his encouragement, co-operation and sympathetic attitude. My thanks go to Dr. Hal S. Tharp for being helpful and considerate about my study room accommodation at the department. One particular person I would like to thank very much is Mr. Leo Enfield. He was always there to help me with the simulation program and PC support. I am thankful to Mr. Lewis Dupont for being always responsive about my study room accommodation. I would like to thank Ms. Tami Whalen profusely for being there always willing to help with academic matters. I am thankful to Ms. Gail Varin of Optical Sciences and Ms. Nancy Lindsay of the graduate college for all their help. 5 DEDICATED TO THE LOVING MEMORY OF My mother: C. Ponnamma My father: M. Gopalan Nair My uncle: C. Rajappan Nair My brother: C. Chandrasekharan Nair My favorite professor: M. R. Harsha Jyothi Long time family friend: A. V. Divakaran Pillay My good friend : Philip Thomas 6 TABLE OF CONTENTS LIST OF FIGURES ........................................................................................................ 11 LIST OF TABLES .......................................................................................................... 23 ABSTRACT..................................................................................................................... 24 1. INTRODUCTION........................................................................................................ 26 1.1 Short History of Silicon CMOS Devices .......................................................... 27 1.1.1 Technology node .................................................................................. 28 1.1.2 Operating Speed.................................................................................... 30 1.1.3 Power Dissipation................................................................................. 30 1.1.4 Low Voltage Systems........................................................................... 31 1.2 Current Status of Silicon CMOS....................................................................... 32 1.3 Future of Silicon CMOS ................................................................................... 34 1.4 Introduction to Silicon Germanium (Si 1-xGe x )................................................. 35 1.4.1 Advantages of Si 1-xGe x ......................................................................... 38 1.4.2 Silicon Germanium in all Silicon Technology .................................... 39 1.4.3 Current Status of Si 1-xGe x Technology................................................. 41 1.5 Limitations of Si CMOS ................................................................................... 43 1.5.1 Si/SiO 2 Interface ................................................................................... 46 1.5.2. Perpendicular Fields ............................................................................ 46 1.5.3. Substrate Doping ................................................................................. 48 1.5.4. Improving Silicon CMOS Performance .............................................. 49 1.6 Objective and Organization of the Project ........................................................ 51 1.6.1 Objective............................................................................................... 51 1.6.2 Procedure .............................................................................................. 54 1.6.3 Organization of chapters....................................................................... 58 2. MODERN SHORT CHANNEL PMOS..................................................................... 61 2.1 Scaling............................................................................................................... 62 2.2 Short Channel Effects........................................................................................ 64 2.2.1 Velocity Saturation ............................................................................... 64 2.2.2 Pinch off, Saturation and Channel Length Modulation........................ 64 2.2.3 Drain Induced Barrier Lowering (DIBL) ............................................. 65 2.2.4 Velocity Overshoot and Hot Carriers ................................................... 66 2.2.5 Substrate Current Induced Body Effect................................................ 67 2.2.6 Gate Tunnel Current ............................................................................. 67 2.2.7 Gate Oxide Breakdown......................................................................... 68 2.2.8 Sub-surface Punch Through ................................................................. 68 2.2.9 Random Dopant Effects........................................................................ 68 2.2.10 Ballistic Transport .............................................................................. 68 7 TABLE OF CONTENTS - Continued 2.2.11 Velocity Overshoot............................................................................. 69 2.3. Nano Scale Device Design Aspects ................................................................. 69 2.4 Analysis of Short Channel MOSFET................................................................ 72 2.4.1 Drain Current........................................................................................ 72 2.4.2 Transcondctance and Transition Frequency ......................................... 73 2.4.3 Scaling Limits and Reliability .............................................................. 74 3. PRELIMINARY STUDIES OF A QW MOSFET.................................................... 75 3.1 Introduction ......................................................................................................
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