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IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) 2022 – HEIKI RIEL “For contributions to materials for IBM Fellow, Lead IBM Research nanoscale electronics and organic light- Quantum Europe & Africa, Zurich, emitting devices.” Switzerland 2021 – HIDEAKI AOCHI “For pioneering and sustained Senior Expert, Institute of Memory contributions to high-density, three- Technology Research and dimensional flash memory.” Development, Kioxia Corporation, Kanagawa, Japan AND RYOTA KATSUMATA Deputy General Manager, Advanced Memory Development Center, Kioxia Corporation, Mie, Japan AND MASARU KITO Group Manager, Advanced Memory Development Center, Kioxia Corporation, Mie, Japan 2020 – EVELYN L. HU “For pioneering contributions to Tarr-Coyne Professor microelectronics fabrication technologies of Applied Physics and Electrical for nanoscale and photonic devices.” Engineering, John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA 2019 – DIGH HISAMOTO “For pioneering work in the manufacturing Chief Senior Scientist, of three-dimensional double-gate MOSFET Hitachi; Ltd., Tokyo, Japan devices.” 2018 - GURTEJ S. SANDHU “For contributions to silicon CMOS process Senior Fellow, Director, Emerging technology that enable DRAM and NAND Memory Technologies R&D, Micron memory chip scaling.” Technology Inc., Boise, Idaho, USA 2017 - SORIN CRISTOLOVEANU “For contributions to silicon-on-insulator Director of Research, The French technology and thin body devices.” National Centre for Scientific Research, Grenoble, France 2016 – CARLOS H. DÍAZ “For sustained contributions to and Director, Advanced Logic leadership in foundry advanced CMOS logic Technology Development, Taiwan transistor technology.” Semiconductor Manufacturing Co., 1 of 6 IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) Hsinchu, Taiwan 2015 - MASAYOSHI ESASHI “For developments in micro-electro- Professor, Tohoku University, mechanical systems (MEMS) used in Sendai, Miyagi, Japan transportation and industrial electronics.” 2014 - SANJAY BANERJEE “For contributions to column-IV MOSFETs Cockrell Regents Chair Professor of and related materials processing.” Electrical and Computer Engineering and Director, Microelectronics Center, University of Texas, Austin, Texas, USA 2013 - SHINICHI TAKAGI “For contributions to the understanding of Full Professor, The University of transport properties in inversion layers of Tokyo, Tokyo, Japan high-performance MOSFETs.” 2012 - JEAN-PIERRE COLINGE “For contributions to silicon-on-insulator Head of the Micro-Nano Electronics devices and technology.” Centre, Tyndall National Institute, University College Cork Cork, Ireland 2011 - JUDY HOYT “For seminal contributions to the Professor, Massachusetts Institute of demonstration of Si/Ge lattice mismatch Technology, strain engineering for enhanced carrier Cambridge, MA, USA transport properties in MOSFET devices.” AND EUGENE A. FITZGERALD Merton C. Flemings SMA Professor of Materials Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA 2010 - BIJAN DAVARI “For contributions to high performance IBM Fellow, Vice President deep-submicron CMOS technology.” IBM Corporation Yorktown Heights, NY, USA 2009 - ERIC FOSSUM “For significant contributions to the Chairman & CEO, Siimpel invention, development and Corporation, commercialization of CMOS image Arcadia, CA, USA sensors.” 2008 - STEFAN LAI “For contributions in developing Flash memory into a main stream non-volatile 2 of 6 IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) Retired Vice President, Technology & memory and the development of multiple Manufacturing Group, Intel generations of Flash memory technologies” Corporation, Santa Clara, CA, USA 2007 - JAMES D. PLUMMER “For seminal contributions to the modeling, Dean of Engineering simulation and physics of silicon devices.” Stanford University, Stanford, CA, USA 2006 - CHANG-GYU HWANG “For contributions to the development of President and CEO of advanced memory products.” Samsung Electronics Co, Ltd Gyeonggi-Do, Korea 2005 – TSO-PING MA “For contributions to the development and Raymond John Wean Professor and understanding of CMOS gate dielectrics.” Chairman of Electrical Engineering Yale University, New Haven, CT, USA 2004 – KRISHNA SARASWAT “For seminal contributions to silicon Professor, Dept of Electrical Engrg process technology.” Stanford University, Stanford, CA, USA 2003 - MARK BOHR "For leadership in scaling of advanced Fellow, Director of Process CMOS technology for microprocessors." Architecture & Integration Intel Corporation, Hillsboro, OR, USA 2002 – DIMITRI A. ANTONIADIS "For seminal contributions to field-effect Massachusetts Institute of devices and silicon process modeling." Technology Cambridge, MA, USA 2001 - AL F. TASCH, JR. “For contributions to MOS technology, and University of Texas at Austin, ion implantation and device modeling.” Austin, TX, USA Beginning with the year 2001, the Jack A. Morton Award was renamed the IEEE Andrew S. Grove Award 2000 - WOLFGANG FICHTNER “For outstanding contributions to Swiss Federal Institute of semiconductor device simulations.” Technology Zurich, Switzerland 3 of 6 IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) 1999 - CHARLES H. HENRY "For fundamental contributions to the Lucent Technologies, Bell understanding of the optical properties of Laboratories quantum wells and semiconductor lasers." Murray Hill, NJ 1998 - ISAMU AKASAKI “For contributions in the field of Meijo University group-III nitride materials and devices.” Nagoya, Japan AND SHUJI NAKAMURA Nichia Chemical Industries, Ltd. Tokushima, Japan 1997 - CHENMING HU "For outstanding contributions to the University of California physics and modeling of MOS device Berkeley, CA, USA reliability." 1996 - ROBERT W. DUTTON "For seminal contributions to Stanford University semiconductor process and device Stanford, CA, USA modeling." 1995 - YOSHIO NISHI "For contributions to the basic Hewlett-Packard Company understanding and innovative development Palo Alto, CA, USA of MOS device technology." 1994 - ROBERT E. KERWIN "For pioneering work and the basic patent AT&T on the self-aligned silicon-gate process, a Warren, NJ, USA key element in fabrication of very large AND scale integrated circuits." DONALD L. KLEIN IBM Corporation Hopewell Junction, NY, USA AND JOHN C. SARACE Rockwell International Anaheim, CA, USA 1993 - TOSHIHISA TSUKADA "For contributions to the discovery and Hitachi, Ltd. development of Buried Heterostructure Tokyo, Japan (BH) semiconductor lasers." 1992 - TAKUO SUGANO "For contributions to Metal-Insulator- University of Tokyo Semiconductor Devices and Technology." Tokyo, Japan 4 of 6 IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) 1991 - TAK H. NING "For contributions to the development of HWA N. YU advanced bipolar and MOS devices." IBM Corporation Yorktown Height, NY, USA 1990 - GREGORY E. STILLMAN "For the growth and characterization of University of Illinois ultra-high purity gallium arsenide and Urbana, IL related compounds." and CHARLES M. WOLFE Washington University St. Louis, MO, USA 1989 - CHIH-TANG SAH "For contributions to the understanding of University of Illinois semiconductor defects and the physics of Urbana, IL, USA MOS devices." 1988 - FRANK STERN "For contributions to the theory of injection IBM Corp. lasers and two-dimensional electron Yorktown Heights, NY, USA gases." 1987 - DENNIS D. BUSS "For the demonstration and development AND of mercury cadmium telluride RICHARD A. CHAPMAN monolithically- integrated charge-coupled AND device focal plane arrays." MICHAEL A. KINCH Texas Instruments Dallas, TX, USA 1986 - HERBERT KROEMER "For pioneering the theory and device University of California applications of semiconductor Santa Barbara, CA, USA heterostructures." 1985 - ROBERT D. BURNHAM "For contributions to electrically pumped AND distributed feedback lasers and high-power WILLIAM STREIFER phased-locked laser arrays." Xerox Corp. Palo Alto, CA, USA AND DONALD R. SCIFRES Spectra Diode Laboratories San Jose, CA, USA 1984 - HANS S. RUPPRECHT "For pioneering work in gallium aluminum AND arsenide heterojunctions and high JERRY M. WOODALL efficiency light emitting diodes and IBM Corp. injection lasers prepared by liquid phase Yorktown Heights, NY, USA epitaxy." 5 of 6 IEEE ANDREW S. GROVE AWARD RECIPIENTS (Formerly the IEEE Jack A. Morton Award) 1983 - JUN-ICHI NISHIZAWA "For invention and development of the Tohoku University class of static induction transistors (SIT) Sendai, Japan and for advances in optoelectronic devices." 1982 - DOV FROHMAN-BENTCHKOWSKY "For contributions to non-volatile INTEL Elec. semiconductor memories." Jerusalem, Israel 1981 - NICK HOLONYAK, JR. "For pioneering work in quantum well University of Illinois lasers and contributions to visible Urbana, IL, USA semiconductor lasers and light-emitting diodes." 1980 - JAMES F. GIBBONS "For pioneering contributions to the use of Stanford University ion implantation in the fabrication of Stanford, CA, USA semiconductor devices." 1979 - MARTIN P. LEPSELTER "For invention of the beam-lead structure Bell Laboratories and metallurgy used in silicon integrated Murray Hill, NJ, USA circuits." 1978 - JURI MATISOO "For pioneering the Josephson computer IBM Corp. technology." Yorktown Heights, NY, USA 1977 - MORGAN SPARKS "For contributions to solid-state device Sandia Corp. technology and the management of Albuquerque, NM, USA research and development." 1976 - ROBERT N. HALL "For outstanding achievement in General Electric Co. solid-state physics and chemistry and the Schenectady, NY USA invention and development of semiconductor devices." 6 of 6 .
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