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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B E SOT-23 Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA ° TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5088 *MMBT5088 2N5089 *MMBT5089 PD Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 5088 30 V Voltage* 5089 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 5088 35 V 5089 30 V ICBO Collector Cutoff Current VCB = 20 V, IE = 0 5088 50 nA VCB = 15 V, IE = 0 5089 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA VEB = 4.5 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088 300 900 5089 400 1200 IC = 1.0 mA, VCE = 5.0 V 5088 350 5089 450 IC = 10 mA, VCE = 5.0 V* 5088 300 5089 400 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 mA, 50 MHz f = 20 MHz 3 Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 5088 350 1400 f = 1.0 kHz 5089 450 1800 NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088 3.0 dB RS = 10 kΩ, 5089 2.0 dB f = 10 Hz to 15.7 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 1200 0.3 V CE = 5.0 V 125 °C 1000 0.25 β = 10 800 0.2 125 °C 600 0.15 25 °C 400 0.1 25 °C - 40 °C 200 0.05 - 40 °C 0 FE 0.01 0.03 0.1 0.3 1 3 10 30 100 h - TYPICAL PULSED CURRENT h GAIN CURRENT PULSED TYPICAL - 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) CESAT V - COLLECTOR-EMITTER VOLTAGE (V) V VOLTAGE - COLLECTOR-EMITTER I C - COLLECTOR CURRENT (mA) Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 1 - 40 °C 0.8 0.8 - 40 °C 25 °C 0.6 25 °C 0.6 125 °C 125 °C 0.4 0.4 β = 10 V CE = 5.0 V 0.2 0.2 0.1 1 10 100 BEON V - BASE-EMITTER ON VOLTAGE (V) VOLTAGE ON BASE-EMITTER - V BESAT 0.1 1 10 40 V - COLLECTOR-EMITTER VOLTAGE (V) VOLTAGE V - COLLECTOR-EMITTER I - COLLECTOR CURRENT (mA) C I C - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature 10 VCB = 45V 1 CBO I - CI OLLE0.1 CTOR CU RR EN T (nA) 25 50 75 100 125 150 T A - A MBIE NT TEMP ER ATUR E ( ° C) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance Contours of Constant Gain vs Reverse Bias Voltage Bandwidth Product (f T ) 5 10 f = 1.0 MHz 7 175 MHz 4 5 3 C te 3 150 MHz 2 2 125 MHz CAPACITANCE (pF) CAPACITANCE 100 MHz 1 C ob 75 MHz CE 0 V - COLLECTOR VOLTAGE (V) 1 048121620 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA) Normalized Collector-Cutoff Current Wideband Noise Frequency ° vs Ambient Temperature vs Source Resistance 1000 5 A V CE = 5.0 V 4 BANDWIDTH = 15.7 kHz 10 0 I = 100 µA 3 C 3 I = 30 µA 2 C 10 1 NFNOISE - FIGURE (dB) I C = 10 µA 1 0 25 50 75 100 125 150 1,000 2,000 5,000 10,000 20,000 50,000 100,000 CHARACTERIS TICS RELATI VE TO VALUE AT T = 25 C = 25 T AT VALUE CHARACTERISRELATI TO VE TICS T A - AMBIENT TEMPERATURE ( ° C) R S - SOURCE RESISTANCE (Ω ) Noise Figure vs Frequency Power Dissipation vs 10 Ambient Temperature I C = 200 µA, 625 R = 10 kΩ 8 S TO-92 500 I C = 100 µA, R S = 10 kΩ 6 375 SOT-23 I C = 1.0 mA, R S = 500 Ω 4 250 I C = 1.0 mA, R S = 5.0 kΩ NF - NOISEFIGURE (dB) 2 125 V CE = 5.0V D P POWERP - DISSIPATION (mW) 0 0 0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 o f - FREQUENCY (MHz) TEMPERATURE ( C) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Contours of Constant Contours of Constant Narrow Band Noise Figure Narrow Band Noise Figure 10,000 10,000 Ω Ω 3.0 dB 5,000 5,000 4.0 dB 2.0 dB 2,000 2,000 6.0 dB 3.0 dB 1,000 1,000 4.0 dB 8.0 dB 500 500 V CE = 5. 0 V 10 dB V CE = 5.0 V 6.0 dB f = 100 Hz f = 1.0 kHz BANDWIDTH 200 BANDWIDTH 200 8.0 dB = 20 Hz 12 dB = 200 Hz S S R - SOURCE RESISTANCE ( ) ( RESISTANCE SOURCE - R R - SOURCE RESISTANCE ( ) R SOURCE RESISTANCE - 14 dB 100 100 1 10 100 1,000 1 10 100 1,000 µ µ I C - COLLECTOR CURRENT ( A) I C - COLLECTOR CURRENT ( A) Contours of Constant Contours of Constant Narrow Band Noise Figure Narrow Band Noise Figure 10000 10000 Ω Ω 5000 5000 1.0 dB 2000 2.0 dB 2000 2.0 dB 3.0 dB 1000 1000 3.0 dB 4.0 dB V = 500 500 CE 4.0 dB 5.0 V CE = 5.0V 6.0 dB 5.0V dB f = 10kHz f = 1.0 MHz 6.0 200 BANDWIDTH 200 dB S BANDWIDTH 8.0 dB S 7.0 dB R - SOURCE RESISTANCE( ) = 2.0kHz R - SOURCE RESISTANCE ( ) RESISTANCE R - SOURCE = 200kHz 8.0 dB 100 100 1 10 100 1000 0.01 0.1 1 10 µ I C - COLLECTOR CURRENT ( A) µ I C - COLLECTOR CURRENT ( A) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0 kHz) Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 ° 1.5 CE h fe A 1.4 h ie 1.3 V CE = 5.0V h re 1.3 f = 1.0kHz h ie h fe 1.2 I C = 1.0mA 1.2 h oe
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