Csd25301w1015

P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015

Features Product Summary

D D • Ultra Low Qg & Qgd VDS -20 V Q 2.0 nC • Small Footprint g S S Qgd 0.32 nC • Low Profile 0.65mm height VGS= -1.5V 175 mΩ

• Pb Free S G RDS(on) VGS=-2.5V 80 mΩ

VGS=-4.5V 62 mΩ RoHS Compliant • CSP 1.0 x 1.5 mm Wafer Vth -0.75 V • Halogen Free Level Package Top View

o Maximum Values (TA=25 C unless otherwise stated) Symbol Parameter Value Units VDS Drain to Source Voltage -20 V ±8 VGS Gate to Source Voltage V 1 ID Continuous Drain Current, TJ = 25°C -2.2 A

1,2 IDM Pulsed Drain Current, TJ = 25°C -8.8 A 1 PD Power Dissipation 1.5 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C 0 1. RthJA = 85 C/W on max Cu (2 oz.) on 0.060” thick FR4 PCB 2. Pulse width ≤300 µs, duty cycle ≤ 2%

RDS(ON) vs. VGS Gate Charge 300 6 I = -1A D V = -10V DS

) 250 5 ID = -1A Ω T = 125ºC 200 J 4 TJ = 25ºC 150 3

100 (V) Voltage - Gate 2 - On Resistance (m GS

-V DS(on) 50 R 1

0 0 0123456 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 -V - Gate to Source Voltage (V) Qg - Gate Charge (nC) GS

Ordering Information

Type Package Package Media Qty Ship CSD25301W1015 1.0 X 1.5 Wafer Level Package 7 inch reel 3000 Tape and Reel

© 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 O Electrical Characteristics (TA = 25 C unless otherwise stated) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics

BVDSS Drain to Source Voltage VGS = 0V, ID = -250µA -20 ▬ ▬ V

IDSS Drain to Source Leakage Current VGS = 0V, VDS = -16V ▬ ▬ -1 µA

IGSS Gate to Source Leakage Current VDS = 0V, VGS = ±8V ▬ ▬ -100 nA

VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = -250µA -0.4 -0.75 -1.0 V

VGS = -1.5V, ID = -1A ▬ 175 220 mΩ

RDS(on) Drain to Source On Resistance VGS = -2.5V, ID = -1A ▬ 80 100 mΩ

VGS = -4.5V, ID = -1A ▬ 62 75 mΩ

gfs Transconductance VDS = -10V, ID = -1A ▬ 5.8 ▬ S

Dynamic Characteristics

CISS Input Capacitance ▬ 210 270 pF VGS = 0V, VDS = -10V COSS Output Capacitance ▬ 90 120 pF f = 1MHz CRSS Reverse Transfer Capacitance ▬ 30 40 pF

Qg Gate Charge Total (-4.5V) ▬ 1.9 2.5 nC

Qgd Gate Charge Gate to Drain ▬ 0.4 ▬ nC VDS = -10V, ID = -1A Qgs Gate Charge Gate to Source ▬ 0.35 ▬ nC

Qg(th) Gate Charge at Vth ▬ 0.17 ▬ nC

QOSS Output Charge VDS = -9.8V, VGS = 0V ▬ 1.7 ▬ nC

td(on) Turn On Delay Time ▬ 4.0 ▬ ns VDS = -10V tr Rise Time ▬ 2.0 ▬ ns VGS = -4.5V ID = -1A td(off) Turn Off Delay Time ▬ 29 ▬ ns RG = 20Ω tf Fall Time ▬ 12 ▬ ns

Diode Characteristics

VSD Diode Forward Voltage IS = -1A, VGS = 0V ▬ -0.75 -1.0 V

Vdd=-9.8V, IF = -1A, Qrr Reverse Recovery Charge ▬ 0.9 ▬ nC di/dt = 200A/µs

Vdd=-9.8V, IF = -1A, trr Reverse Recovery Time ▬ 8.2 ▬ ns di/dt = 200A/µs

O Thermal Characteristics (TA = 25 C unless otherwise stated) Symbol Parameter Min Typ Max Units

Thermal Characteristics ▬ ▬ R θJA Thermal Resistance Junction to Ambient (Minimum Cu area) 270 °C/W ▬ ▬ R θJA Thermal Resistance Junction to Ambient (1 in2 Cu area) 105 °C/W

oC/W o Max Rθja =105 Max Rθja =270 C/W when 2 when mounted on 1in of mounted on min pad area of

2 oz. Cu. 2 oz. Cu.

1 0.5 0.3 0.1 0.1 Duty Cycle =t /t 0.05 1 2 0.02 P 0.01 0.01 t1

Normalized thermal impedance thermal Normalized 0.001 0 2 RthJA =85 C/W (1in Cu) JA Single Pulse Tj = P * ZthJA * RthJA Zth

0.0001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Pulse duration (s)

Figure 1: Transient Thermal Impedance

© 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 o Typical MOSFET Characteristics (TA = 25 C unless otherwise stated)

10.0 5.0

9.0 4.5 VDS = -5V 8.0 4.0 V = -4.5V 7.0 GS 3.5 VGS = -3.0V 6.0 3.0 VGS = -2.5V

5.0 VGS = -2.0V 2.5 V = -1.5V 4.0 GS 2.0 TJ = -55º C

- Drain Current (A) Current - Drain T = 25º C D - Current (A) Drain 3.0 1.5 J D -I

-I TJ = 125ºC 2.0 1.0

1.0 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.75 1 1.25 1.5 1.75 2 -V - Drain to Source Voltage (V) -V - Gate to Source Voltage (V) DS GS Figure 2: Saturation Characteristics Figure 3: Transfer Characteristics

6 300

VGS = 0V, f = 1MHz VDS = -10V 250 5 ID = -1A

4 200

CISS = CGD+CGS 150 3 COSS =CDS+CGD

CRSS = CGD 100 - Gate Voltage (V) Voltage - Gate 2 (pF) Capacitance GS -V 50 1

0 0 0 5 10 15 20 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 -V - Drain to Source Voltage (V) Qg - Gate Charge (nC) DS Figure 4: Gate Charge Figure 5: Capacitance

1.0 300 I = -250µA 0.9 D ID = -1A

0.8 ) 250 Ω 0.7 200 TJ = 125ºC

0.6 TJ = 25ºC 0.5 150 0.4 100 0.3 - Threshold Voltage (V) - On Resistance (m 0.2 GS(th) DS(on) 50 R -V 0.1

0.0 0 -75 -25 25 75 125 175 0123456 T - Junction Temperature (°C) -V - Gate to Source Voltage (V) J GS Figure 6: Threshold Voltage vs. Temperature Figure 7: On Resistance vs. Gate Voltage

o Typical MOSFET Characteristics (TA = 25 C unless otherwise stated) 1.6 10 I = -1A, V = -4.5V 1.4 D GS 1 1.2

1.0 0.1 TJ = 125ºC TJ = 25ºC 0.8

0.6 0.01

0.4 0.001 - Source to Drain Current (A) Current to Drain Source - Normalized OnResistance

0.2 SD -I

0.0 0.0001 -75 -25 25 75 125 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) -V - Source to Drain Voltage (V) J SD Figure 8: On Resistance vs. Temperature Figure 9: Typical Diode Forward Voltage

100 2.5

2.0 10

100us 1.5

1 1ms 1.0 - Drain Current (A) Current - Drain - DrainCurrent (A) May be limited by D D -I -I 0.1 Rds 10ms (ON) 0.5 Single pulse 100ms 0 RthJA=216 C/W (min Cu) DC 0.01 0.0 0.1 1 10 100 -50 -25 0 25 50 75 100 125 150 175 -V - Drain Voltage (V) T - Junction Temperature (°C) DS J Figure 10: Maximum Safe Operating Area Figure 11: Maximum Drain Current vs. Temperature

Top View

Bottom View

Notes: 1. All Dimensions are in mm

Pinout 1 2 A G S B S S C D D

PIN 1 IDENTIFIER

Package Marking Information

Location:

1st Line

Product Code = 75301 (Fixed Text) 25301 nd 2 Line XXXXWW

XXXXWW = Last 4 digits of lot number

(XXXX); Wafer number (WW)

PIN 1

IDENTIFIER

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Additional Information For further information on technology, delivery terms and conditions, or pricing please contact your nearest CICLON Semiconductor representative. CICLON Semiconductor Device Corp. 116 Research Drive, Bethlehem, PA 18015 T 610-849-5100 F 610-849-5101