P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 Features Product Summary D D • Ultra Low Qg & Qgd VDS -20 V Q 2.0 nC • Small Footprint g S S Qgd 0.32 nC • Low Profile 0.65mm height VGS= -1.5V 175 mΩ • Pb Free S G RDS(on) VGS=-2.5V 80 mΩ VGS=-4.5V 62 mΩ RoHS Compliant • CSP 1.0 x 1.5 mm Wafer Vth -0.75 V • Halogen Free Level Package Top View o Maximum Values (TA=25 C unless otherwise stated) Symbol Parameter Value Units VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±8 V 1 ID Continuous Drain Current, TJ = 25°C -2.2 A IDM Pulsed Drain Current, TJ = 25°C1,2 -8.8 A 1 PD Power Dissipation 1.5 W TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C 0 1. RthJA = 85 C/W on max Cu (2 oz.) on 0.060” thick FR4 PCB 2. Pulse width ≤300 µs, duty cycle ≤ 2% RDS(ON) vs. VGS Gate Charge 300 6 ID = -1A V DS = -10V ) 250 5 ID = -1A Ω T = 125ºC 200 J 4 TJ = 25ºC 150 3 100 (V) Voltage - Gate 2 - On Resistance (m GS -V DS(on) 50 R 1 0 0 0123456 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 -V - Gate to Source Voltage (V) Qg - Gate Charge (nC) GS Ordering Information Type Package Package Media Qty Ship CSD25301W1015 1.0 X 1.5 Wafer Level Package 7 inch reel 3000 Tape and Reel © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 O Electrical Characteristics (TA = 25 C unless otherwise stated) Symbol Parameter Test Conditions Min Typ Max Units Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = -250µA -20 ▬ ▬ V IDSS Drain to Source Leakage Current VGS = 0V, VDS = -16V ▬ ▬ -1 µA IGSS Gate to Source Leakage Current VDS = 0V, VGS = ±8V ▬ ▬ -100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = -250µA -0.4 -0.75 -1.0 V VGS = -1.5V, ID = -1A ▬ 175 220 mΩ RDS(on) Drain to Source On Resistance VGS = -2.5V, ID = -1A ▬ 80 100 mΩ VGS = -4.5V, ID = -1A ▬ 62 75 mΩ gfs Transconductance VDS = -10V, ID = -1A ▬ 5.8 ▬ S Dynamic Characteristics CISS Input Capacitance ▬ 210 270 pF VGS = 0V, VDS = -10V COSS Output Capacitance ▬ 90 120 pF f = 1MHz CRSS Reverse Transfer Capacitance ▬ 30 40 pF Qg Gate Charge Total (-4.5V) ▬ 1.9 2.5 nC Qgd Gate Charge Gate to Drain ▬ 0.4 ▬ nC VDS = -10V, ID = -1A Qgs Gate Charge Gate to Source ▬ 0.35 ▬ nC Qg(th) Gate Charge at Vth ▬ 0.17 ▬ nC QOSS Output Charge VDS = -9.8V, VGS = 0V ▬ 1.7 ▬ nC td(on) Turn On Delay Time ▬ 4.0 ▬ ns VDS = -10V tr Rise Time ▬ 2.0 ▬ ns VGS = -4.5V ID = -1A td(off) Turn Off Delay Time ▬ 29 ▬ ns RG = 20Ω tf Fall Time ▬ 12 ▬ ns Diode Characteristics VSD Diode Forward Voltage IS = -1A, VGS = 0V ▬ -0.75 -1.0 V Vdd=-9.8V, IF = -1A, Qrr Reverse Recovery Charge ▬ 0.9 ▬ nC di/dt = 200A/µs Vdd=-9.8V, IF = -1A, trr Reverse Recovery Time ▬ 8.2 ▬ ns di/dt = 200A/µs © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 O Thermal Characteristics (TA = 25 C unless otherwise stated) Symbol Parameter Min Typ Max Units Thermal Characteristics ▬ ▬ R θJA Thermal Resistance Junction to Ambient (Minimum Cu area) 270 °C/W ▬ ▬ R θJA Thermal Resistance Junction to Ambient (1 in2 Cu area) 105 °C/W o o Max Rθja =105 C/W Max Rθja =270 C/W when 2 when mounted on 1in of mounted on min pad area of 2 oz. Cu. 2 oz. Cu. 10 1 0.5 0.3 0.1 0.1 Duty Cycle =t /t 0.05 1 2 0.02 P 0.01 0.01 t1 t2 Normalized thermal impedance thermal Normalized 0.001 0 2 RthJA =85 C/W (1in Cu) JA Single Pulse Tj = P * ZthJA * RthJA Zth 0.0001 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Pulse duration (s) Figure 1: Transient Thermal Impedance © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 o Typical MOSFET Characteristics (TA = 25 C unless otherwise stated) 10.0 5.0 9.0 4.5 VDS = -5V 8.0 4.0 V = -4.5V 7.0 GS 3.5 VGS = -3.0V 6.0 3.0 VGS = -2.5V 5.0 VGS = -2.0V 2.5 V = -1.5V 4.0 GS 2.0 TJ = -55º C - Drain Current (A) Current - Drain T = 25º C D - Current (A) Drain 3.0 1.5 J D -I -I TJ = 125ºC 2.0 1.0 1.0 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.75 1 1.25 1.5 1.75 2 -V - Drain to Source Voltage (V) -V - Gate to Source Voltage (V) DS GS Figure 2: Saturation Characteristics Figure 3: Transfer Characteristics 6 300 VGS = 0V, f = 1MHz VDS = -10V 250 5 ID = -1A 4 200 CISS = CGD+CGS 150 3 COSS =CDS+CGD CRSS = CGD 100 - Gate Voltage (V) Voltage - Gate 2 (pF) Capacitance GS -V 50 1 0 0 0 5 10 15 20 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 -V - Drain to Source Voltage (V) Qg - Gate Charge (nC) DS Figure 4: Gate Charge Figure 5: Capacitance 1.0 300 I = -250µA 0.9 D ID = -1A 0.8 ) 250 Ω 0.7 200 TJ = 125ºC 0.6 TJ = 25ºC 0.5 150 0.4 100 0.3 - Threshold Voltage (V) - On Resistance (m 0.2 GS(th) DS(on) 50 R -V 0.1 0.0 0 -75 -25 25 75 125 175 0123456 T - Junction Temperature (°C) -V - Gate to Source Voltage (V) J GS Figure 6: Threshold Voltage vs. Temperature Figure 7: On Resistance vs. Gate Voltage © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 o Typical MOSFET Characteristics (TA = 25 C unless otherwise stated) 1.6 10 I = -1A, V = -4.5V 1.4 D GS 1 1.2 1.0 0.1 TJ = 125ºC TJ = 25ºC 0.8 0.6 0.01 0.4 0.001 - Source to Drain Current (A) Current to Drain Source - Normalized OnResistance 0.2 SD -I 0.0 0.0001 -75 -25 25 75 125 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) -V - Source to Drain Voltage (V) J SD Figure 8: On Resistance vs. Temperature Figure 9: Typical Diode Forward Voltage 100 2.5 2.0 10 100us 1.5 1 1ms 1.0 - Drain Current (A) Current - Drain - DrainCurrent (A) May be limited by D D -I -I 0.1 Rds 10ms (ON) 0.5 Single pulse 100ms 0 RthJA=216 C/W (min Cu) DC 0.01 0.0 0.1 1 10 100 -50 -25 0 25 50 75 100 125 150 175 -V - Drain Voltage (V) T - Junction Temperature (°C) DS J Figure 10: Maximum Safe Operating Area Figure 11: Maximum Drain Current vs. Temperature © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 CSD25301W1015 Package Dimensions Top View Bottom View Notes: 1. All Dimensions are in mm Pinout 1 2 A G S B S S C D D © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 Tape and Reel Information PIN 1 IDENTIFIER Package Marking Information Location: 1st Line Product Code = 75301 (Fixed Text) 25301 nd 2 Line XXXXWW XXXXWW = Last 4 digits of lot number (XXXX); Wafer number (WW) C PIN 1 IDENTIFIER Y © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. C Y P-Channel CICLON NexFET™ Power MOSFETs CSD25301W1015 Disclaimer CICLON Semiconductor Device Corp. (“CICLON”) reserves the right to make corrections, modifications, enhancements, improvements and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to CICLON’s terms and conditions of sale supplied at the time of order acknowledgement. Additional Information For further information on technology, delivery terms and conditions, or pricing please contact your nearest CICLON Semiconductor representative. CICLON Semiconductor Device Corp. 116 Research Drive, Bethlehem, PA 18015 T 610-849-5100 F 610-849-5101 © 2008 CICLON Semiconductor Device Corp., rev 2.3 www.ciclonsemi.com All rights reserved. .