Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B E SOT-23 Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Collector-Base Voltage 2N5088 35 V 2N5089 30 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 100 mA ° TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N5088 *MMBT5088 2N5089 *MMBT5089 PD Total Device Dissipation 625 350 mW Derate above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N5088/2N5089/MMBT5088/MMBT5089, Rev A 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 5088 30 V Voltage* 5089 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 5088 35 V 5089 30 V ICBO Collector Cutoff Current VCB = 20 V, IE = 0 5088 50 nA VCB = 15 V, IE = 0 5089 50 nA IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA VEB = 4.5 V, IC = 0 100 nA ON CHARACTERISTICS hFE DC Current Gain IC = 100 µA, VCE = 5.0 V 5088 300 900 5089 400 1200 IC = 1.0 mA, VCE = 5.0 V 5088 350 5089 450 IC = 10 mA, VCE = 5.0 V* 5088 300 5089 400 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 500 µA,VCE = 5.0 mA, 50 MHz f = 20 MHz 3 Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 100 kHz 4.0 pF Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 100 kHz 10 pF hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 5.0 V, 5088 350 1400 f = 1.0 kHz 5089 450 1800 NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5088 3.0 dB RS = 10 kΩ, 5089 2.0 dB f = 10 Hz to 15.7 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 1200 0.3 V CE = 5.0 V 125 °C 1000 0.25 β = 10 800 0.2 125 °C 600 0.15 25 °C 400 0.1 25 °C - 40 °C 200 0.05 - 40 °C 0 FE 0.01 0.03 0.1 0.3 1 3 10 30 100 h - TYPICAL PULSED CURRENT h GAIN CURRENT PULSED TYPICAL - 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) CESAT V - COLLECTOR-EMITTER VOLTAGE (V) V VOLTAGE - COLLECTOR-EMITTER I C - COLLECTOR CURRENT (mA) Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current Collector Current 1 1 - 40 °C 0.8 0.8 - 40 °C 25 °C 0.6 25 °C 0.6 125 °C 125 °C 0.4 0.4 β = 10 V CE = 5.0 V 0.2 0.2 0.1 1 10 100 BEON V - BASE-EMITTER ON VOLTAGE (V) VOLTAGE ON BASE-EMITTER - V BESAT 0.1 1 10 40 V - COLLECTOR-EMITTER VOLTAGE (V) VOLTAGE V - COLLECTOR-EMITTER I - COLLECTOR CURRENT (mA) C I C - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature 10 VCB = 45V 1 CBO I - CI OLLE0.1 CTOR CU RR EN T (nA) 25 50 75 100 125 150 T A - A MBIE NT TEMP ER ATUR E ( ° C) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input and Output Capacitance Contours of Constant Gain vs Reverse Bias Voltage Bandwidth Product (f T ) 5 10 f = 1.0 MHz 7 175 MHz 4 5 3 C te 3 150 MHz 2 2 125 MHz CAPACITANCE (pF) CAPACITANCE 100 MHz 1 C ob 75 MHz CE 0 V - COLLECTOR VOLTAGE (V) 1 048121620 0.1 1 10 100 REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA) Normalized Collector-Cutoff Current Wideband Noise Frequency ° vs Ambient Temperature vs Source Resistance 1000 5 A V CE = 5.0 V 4 BANDWIDTH = 15.7 kHz 10 0 I = 100 µA 3 C 3 I = 30 µA 2 C 10 1 NFNOISE - FIGURE (dB) I C = 10 µA 1 0 25 50 75 100 125 150 1,000 2,000 5,000 10,000 20,000 50,000 100,000 CHARACTERIS TICS RELATI VE TO VALUE AT T = 25 C = 25 T AT VALUE CHARACTERISRELATI TO VE TICS T A - AMBIENT TEMPERATURE ( ° C) R S - SOURCE RESISTANCE (Ω ) Noise Figure vs Frequency Power Dissipation vs 10 Ambient Temperature I C = 200 µA, 625 R = 10 kΩ 8 S TO-92 500 I C = 100 µA, R S = 10 kΩ 6 375 SOT-23 I C = 1.0 mA, R S = 500 Ω 4 250 I C = 1.0 mA, R S = 5.0 kΩ NF - NOISEFIGURE (dB) 2 125 V CE = 5.0V D P POWERP - DISSIPATION (mW) 0 0 0.0001 0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 o f - FREQUENCY (MHz) TEMPERATURE ( C) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Contours of Constant Contours of Constant Narrow Band Noise Figure Narrow Band Noise Figure 10,000 10,000 Ω Ω 3.0 dB 5,000 5,000 4.0 dB 2.0 dB 2,000 2,000 6.0 dB 3.0 dB 1,000 1,000 4.0 dB 8.0 dB 500 500 V CE = 5. 0 V 10 dB V CE = 5.0 V 6.0 dB f = 100 Hz f = 1.0 kHz BANDWIDTH 200 BANDWIDTH 200 8.0 dB = 20 Hz 12 dB = 200 Hz S S R - SOURCE RESISTANCE ( ) ( RESISTANCE SOURCE - R R - SOURCE RESISTANCE ( ) R SOURCE RESISTANCE - 14 dB 100 100 1 10 100 1,000 1 10 100 1,000 µ µ I C - COLLECTOR CURRENT ( A) I C - COLLECTOR CURRENT ( A) Contours of Constant Contours of Constant Narrow Band Noise Figure Narrow Band Noise Figure 10000 10000 Ω Ω 5000 5000 1.0 dB 2000 2.0 dB 2000 2.0 dB 3.0 dB 1000 1000 3.0 dB 4.0 dB V = 500 500 CE 4.0 dB 5.0 V CE = 5.0V 6.0 dB 5.0V dB f = 10kHz f = 1.0 MHz 6.0 200 BANDWIDTH 200 dB S BANDWIDTH 8.0 dB S 7.0 dB R - SOURCE RESISTANCE( ) = 2.0kHz R - SOURCE RESISTANCE ( ) RESISTANCE R - SOURCE = 200kHz 8.0 dB 100 100 1 10 100 1000 0.01 0.1 1 10 µ I C - COLLECTOR CURRENT ( A) µ I C - COLLECTOR CURRENT ( A) 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 / MMBT5088 NPN General Purpose Amplifier (continued) Typical Common Emitter Characteristics (f = 1.0 kHz) Typical Common Emitter Characteristics Typical Common Emitter Characteristics 1.4 ° 1.5 CE h fe A 1.4 h ie 1.3 V CE = 5.0V h re 1.3 f = 1.0kHz h ie h fe 1.2 I C = 1.0mA 1.2 h oe