Itanium-Based Solutions by Hp
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HP Z620 Memory Configurations and Optimization
HP recommends Windows® 7. HP Z620 Memory Configurations and Optimization The purpose of this document is to provide an overview of the memory configuration for the HP Z620 Workstation and to provide recommendations to optimize performance. Supported Memory Modules1 Memory Features The types of memory supported on a HP Z620 are: ECC is supported on all of our supported DIMMs. • 2 GB and 4 GB PC3-12800E 1600MHz DDR3 • Single-bit errors are automatically corrected. Unbuffered ECC DIMMs • Multi-bit errors are detected and will cause the • 4 GB and 8 GB PC3-12800R 1600MHz DDR3 system to immediately reboot and halt with an Registered DIMMs F1 prompt error message. • 1.35V and 1.5V DIMMs are supported, but the Non-ECC memory does not detect or correct system will operate the DIMMs at 1.5V only. single-bit or multi-bit errors which can cause • 2 Gb and 4 Gb based DIMMs are supported. instability, or corruption of data, in the platform. See the Memory Technology White Paper for See the Memory Technology White Paper for additional technical information. additional technical information. Command and Address parity is supported with Platform Capabilities Registered DIMMs. Maximum capacity Optimize Performance • Single processor: 64 GB Generally, maximum memory performance is • Dual processors: 96 GB achieved by evenly distributing total desired memory capacity across all operational Total of 12 memory sockets channels. Proper individual DIMM capacity • 8 sockets on the motherboard: 4 channels per selection is essential to maximizing performance. processor and 2 sockets per channel On the second CPU, installing the same • 4 sockets on the 2nd CPU and memory amount of memory as the first CPU will optimize module: 4 channels per processor and 1 performance. -
Interfacing EPROM to the 8088
Chapter 10: Memory Interface Introduction Simple or complex, every microprocessor-based system has a memory system. Almost all systems contain two main types of memory: read-only memory (ROM) and random access memory (RAM) or read/write memory. This chapter explains how to interface both memory types to the Intel family of microprocessors. MEMORY DEVICES Before attempting to interface memory to the microprocessor, it is essential to understand the operation of memory components. In this section, we explain functions of the four common types of memory: read-only memory (ROM) Flash memory (EEPROM) Static random access memory (SRAM) dynamic random access memory (DRAM) Memory Pin Connections – address inputs – data outputs or input/outputs – some type of selection input – at least one control input to select a read or write operation Figure 10–1 A pseudomemory component illustrating the address, data, and control connections. Address Connections Memory devices have address inputs to select a memory location within the device. Almost always labeled from A0, the least significant address input, to An where subscript n can be any value always labeled as one less than total number of address pins A memory device with 10 address pins has its address pins labeled from A0 to A9. The number of address pins on a memory device is determined by the number of memory locations found within it. Today, common memory devices have between 1K (1024) to 1G (1,073,741,824) memory locations. with 4G and larger devices on the horizon A 1K memory device has 10 address pins. therefore, 10 address inputs are required to select any of its 1024 memory locations It takes a 10-bit binary number to select any single location on a 1024-location device. -
Arduino and AVR
Arduino and AVR Ke vin J Dola n a nd Eric Te ve lson Agenda • History of Arduino • Comparison to Other Platforms • Arduino Uno - Hardware • ATmega328P Peripherals • Instruction Set • Processor Components • Pipe lining • Programming • Applica tions • Future of Arduino History of Arduino • Fa mily of Microcontrolle rs cre a te d a s a ma ste rs the sis proje ct • intended for use by a non-technical audience of artists, designers, etc. • Made for accessibility and ease of use. • Programming made easy for the audience • Ability to program board via USB • Inexpensive price point • Expanded for other types and configurations • Example: Arduino Lilypad for wearable technologies • Popularity has expanded functionality including “shields” and Bluetooth. Comparison to Other Platforms • Raspberry Pi • Raspberry Pi is a full computer that can run and support an OS, and has built in graphics. • Porta bility is a n issue , since a n e xte rna l supply is ne e de d. • Network needs more setup on an Arduino • Raspberry Pi does not support analog sensors as well • Teensy • Less expensive • Compatible with Arduino “sketches” and “shields” • Be tte r ADC sa mpling, sa me functiona lity, be tte r re solution • Sma lle r physica l boa rd size Arduino Uno - Hardware • ATmega328P Microcontroller • 3 2 KB Fla s h Me m o ry (2 KB S RAM, 1 KB EEP RO M) • 16 MH z C lo c k • 14 Digita l I/O Pins • 6 PWM Digita l I/O Pins • 6 Analog Input Pins • Up to 20mA DC Current per I/O Pin up to 300mA total across all pins • 50mA DC Current on 3.3V Pin Arduino Uno - Hardware ATmega328P Peripherals • Total of 6 accessible A/D Pins on Port C • 14 GPIO (7 Pins each from PORT B & D) • UART (Se ria l) • SPI Support • Watchdog timer to reset CPU Instruction Set • Harvard Architecture, which is non-von Neumann memory, but still a von Neumann architecture. -
Chapter 1: Microprocessor Architecture
Chapter 1: Microprocessor architecture ECE 3120 – Fall 2013 Dr. Mohamed Mahmoud http://iweb.tntech.edu/mmahmoud/ [email protected] Outline 1.1 Computer hardware organization 1.1.1 Number System 1.1.2 Computer hardware organization 1.2 The processor 1.3 Memory system operation 1.4 Program Execution 1.5 HCS12 Microcontroller 1.1.1 Number System - Computer hardware uses binary numbers to perform all operations. - Human beings are used to decimal number system. Conversion is often needed to convert numbers between the internal (binary) and external (decimal) representations. - Octal and hexadecimal numbers have shorter representations than the binary system. - The binary number system has two digits 0 and 1 - The octal number system uses eight digits 0 and 7 - The hexadecimal number system uses 16 digits: 0, 1, .., 9, A, B, C,.., F 1 - 1 - A prefix is used to indicate the base of a number. - Convert %01000101 to Hexadecimal = $45 because 0100 = 4 and 0101 = 5 - Computer needs to deal with signed and unsigned numbers - Two’s complement method is used to represent negative numbers - A number with its most significant bit set to 1 is negative, otherwise it is positive. 1 - 2 1- Unsigned number %1111 = 1 + 2 + 4 + 8 = 15 %0111 = 1 + 2 + 4 = 7 Unsigned N-bit number can have numbers from 0 to 2N-1 2- Signed number %1111 is a negative number. To convert to decimal, calculate the two’s complement The two’s complement = one’s complement +1 = %0000 + 1 =%0001 = 1 then %1111 = -1 %0111 is a positive number = 1 + 2 + 4 = 7. -
IMME128M64D2SOS8AG (Die Revision E) 1Gbyte (128M X 64 Bit)
Product Specification | Rev. 1.0 | 2015 IMME128M64D2SOS8AG (Die Revision E) 1GByte (128M x 64 Bit) 1GB DDR2 Unbuffered SO-DIMM By ECC DRAM RoHS Compliant Product Product Specification 1.0 1 IMME128M64D2SOS8AG www.intelligentmemory.com Version: Rev. 1.0, FEB 2015 1.0 - Initial release ReReRemark:Re mark: Please refer to the last page of the i) Contents ii) List of Table iii) List of Figures . We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Product Specification 1.0 2 IMME128M64D2SOS8AG www.intelligentmemory.com Features 200-Pin Unbuffered Small Outline Dual-In-Line Memory Module Capacity: 1GB Maximum Data Transfer Rate: 6.40 GB/Sec JEDEC-Standard Built by ECC DRAM Chips Power Supply: VDD, VDDQ =1.8± 0.1 V Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) 64 Bit Data Bus Width without ECC Programmable CAS Latency (CL): o PC2-6400: 4, 5, 6 o PC2-5300: 4, 5 Programmable Additive Latency (Posted /CAS) : 0, CL-2 or CL-1(Clock) Write Latency (WL) = Read Latency (RL) -1 Posted /CAS On-Die Termination (ODT) Off-Chip Driver (OCD) Impedance Adjustment Burst Type (Sequential & Interleave) Burst Length: 4, 8 Refresh Mode: Auto and Self 8192 Refresh Cycles / 64ms Serial Presence Detect (SPD) with EEPROM SSTL_18 Interface Gold Edge Contacts 100% RoHS-Compliant Standard Module Height: 30.00mm (1.18 inch) Product Specification 1.0 3 IMME128M64D2SOS8AG www.intelligentmemory.com ECC DRAM Introduction Special Features (ECC ––– Functionality) - Embedded error correction code (ECC) functionality corrects single bit errors within each 64 bit memory-word. -
(BEER): Determining DRAM On-Die ECC Functions by Exploiting DRAM Data Retention Characteristics
Bit-Exact ECC Recovery (BEER): Determining DRAM On-Die ECC Functions by Exploiting DRAM Data Retention Characteristics Minesh Pately Jeremie S. Kimzy Taha Shahroodiy Hasan Hassany Onur Mutluyz yETH Zurich¨ zCarnegie Mellon University Increasing single-cell DRAM error rates have pushed DRAM entirely within the DRAM chip [39, 76, 120, 129, 138]. On-die manufacturers to adopt on-die error-correction coding (ECC), ECC is completely invisible outside of the DRAM chip, so ECC which operates entirely within a DRAM chip to improve factory metadata (i.e., parity-check bits, error syndromes) that is used yield. e on-die ECC function and its eects on DRAM relia- to correct errors is hidden from the rest of the system. bility are considered trade secrets, so only the manufacturer Prior works [60, 97, 98, 120, 129, 133, 138, 147] indicate that knows precisely how on-die ECC alters the externally-visible existing on-die ECC codes are 64- or 128-bit single-error cor- reliability characteristics. Consequently, on-die ECC obstructs rection (SEC) Hamming codes [44]. However, each DRAM third-party DRAM customers (e.g., test engineers, experimental manufacturer considers their on-die ECC mechanism’s design researchers), who typically design, test, and validate systems and implementation to be highly proprietary and ensures not to based on these characteristics. reveal its details in any public documentation, including DRAM To give third parties insight into precisely how on-die ECC standards [68,69], DRAM datasheets [63,121,149,158], publi- transforms DRAM error paerns during error correction, we cations [76, 97, 98, 133], and industry whitepapers [120, 147]. -
Non-ECC Unbuffered DIMM Non-ECC Vs
Quick Guide to DRAM for Industrial Applications 2019 by SQRAM What’s the difference between DRAM & Flash? DRAM (Dynamic Random Access Memory) and Flash are key components in PC systems, but they are different types of semiconductor products with different speeds/capacity/power-off data storage. High Small Type DRAM Flash Cache data transfer through Location close to CPU PCIe BUS Speed/Cost IC Density low high SRAM Capacity Module 32~64GB 2~8TB Capacity DRAM by ns Speed by ms (faster than flash) non-volatile memory: Power-Off volatile memory: data can be stored if NAND Flash data will lost if powered off Status powered off Low Large What are the features of DRAM? High Data Processing Speed Volatile Memory Extremely fast with low latency by RAM is a type of volatile memory. nanoseconds(10-9) access time. Much faster than It retains its data while powered on, but the data will HDD or SSD data speeds. vanish once the power is off. CPU DRAM HDD Extremely Fast Transfer Higher Capacity, Better Performance DRAM is closely connected to the CPU with short DRAM of higher capacity can process more data to access time. The system performance will drop if increase system performance. The more data data is processed directly by storage without DRAM. processed by DRAM, the less HDD processing time. What are the DDR specifications (DDR, DDR2, DDR3, DDR4)? The prefetch length of DDR SDRAM is 2 bits. On DDR2 the prefetch length is increased to 4 bits, and on DDR3 and on DDR DDR 4 it was raised to 8 bits and 16 bits respectively. -
Introduction to Cpu
microprocessors and microcontrollers - sadri 1 INTRODUCTION TO CPU Mohammad Sadegh Sadri Session 2 Microprocessor Course Isfahan University of Technology Sep., Oct., 2010 microprocessors and microcontrollers - sadri 2 Agenda • Review of the first session • A tour of silicon world! • Basic definition of CPU • Von Neumann Architecture • Example: Basic ARM7 Architecture • A brief detailed explanation of ARM7 Architecture • Hardvard Architecture • Example: TMS320C25 DSP microprocessors and microcontrollers - sadri 3 Agenda (2) • History of CPUs • 4004 • TMS1000 • 8080 • Z80 • Am2901 • 8051 • PIC16 microprocessors and microcontrollers - sadri 4 Von Neumann Architecture • Same Memory • Program • Data • Single Bus microprocessors and microcontrollers - sadri 5 Sample : ARM7T CPU microprocessors and microcontrollers - sadri 6 Harvard Architecture • Separate memories for program and data microprocessors and microcontrollers - sadri 7 TMS320C25 DSP microprocessors and microcontrollers - sadri 8 Silicon Market Revenue Rank Rank Country of 2009/2008 Company (million Market share 2009 2008 origin changes $ USD) Intel 11 USA 32 410 -4.0% 14.1% Corporation Samsung 22 South Korea 17 496 +3.5% 7.6% Electronics Toshiba 33Semiconduc Japan 10 319 -6.9% 4.5% tors Texas 44 USA 9 617 -12.6% 4.2% Instruments STMicroelec 55 FranceItaly 8 510 -17.6% 3.7% tronics 68Qualcomm USA 6 409 -1.1% 2.8% 79Hynix South Korea 6 246 +3.7% 2.7% 812AMD USA 5 207 -4.6% 2.3% Renesas 96 Japan 5 153 -26.6% 2.2% Technology 10 7 Sony Japan 4 468 -35.7% 1.9% microprocessors and microcontrollers -
Embos PPC CW
embOS Real-Time Operating System CPU & Compiler specifics for PowerPC using CodeWarrior for MCU Document: UM01054 Software version 4.04a Revision: 0 Date: December 3, 2014 A product of SEGGER Microcontroller GmbH & Co. KG www.segger.com 2 Disclaimer Specifications written in this document are believed to be accurate, but are not guar- anteed to be entirely free of error. The information in this manual is subject to change for functional or performance improvements without notice. Please make sure your manual is the latest edition. While the information herein is assumed to be accurate, SEGGER Microcontroller GmbH & Co. KG (SEGGER) assumes no responsibil- ity for any errors or omissions. SEGGER makes and you receive no warranties or con- ditions, express, implied, statutory or in any communication with you. SEGGER specifically disclaims any implied warranty of merchantability or fitness for a particu- lar purpose. Copyright notice You may not extract portions of this manual or modify the PDF file in any way without the prior written permission of SEGGER. The software described in this document is furnished under a license and may only be used or copied in accordance with the terms of such a license. © 2014 SEGGER Microcontroller GmbH & Co. KG, Hilden / Germany Trademarks Names mentioned in this manual may be trademarks of their respective companies. Brand and product names are trademarks or registered trademarks of their respec- tive holders. Contact address SEGGER Microcontroller GmbH & Co. KG In den Weiden 11 D-40721 Hilden Germany Tel.+49 2103-2878-0 Fax.+49 2103-2878-28 E-mail: [email protected] Internet: http://www.segger.com UM01054 embOS for PPC and CodeWarrior © 2014 SEGGER Microcontroller GmbH & Co. -
ECE 571 – Advanced Microprocessor-Based Design Lecture 17
ECE 571 { Advanced Microprocessor-Based Design Lecture 17 Vince Weaver http://web.eece.maine.edu/~vweaver [email protected] 3 April 2018 Announcements • HW8 is readings 1 More DRAM 2 ECC Memory • There's debate about how many errors can happen, anywhere from 10−10 error/bit*h (roughly one bit error per hour per gigabyte of memory) to 10−17 error/bit*h (roughly one bit error per millennium per gigabyte of memory • Google did a study and they found more toward the high end • Would you notice if you had a bit flipped? • Scrubbing { only notice a flip once you read out a value 3 Registered Memory • Registered vs Unregistered • Registered has a buffer on board. More expensive but can have more DIMMs on a channel • Registered may be slower (if it buffers for a cycle) • RDIMM/UDIMM 4 Bandwidth/Latency Issues • Truly random access? No, burst speed fast, random speed not. • Is that a problem? Mostly filling cache lines? 5 Memory Controller • Can we have full random access to memory? Why not just pass on CPU mem requests unchanged? • What might have higher priority? • Why might re-ordering the accesses help performance (back and forth between two pages) 6 Reducing Refresh • DRAM Refresh Mechanisms, Penalties, and Trade-Offs by Bhati et al. • Refresh hurts performance: ◦ Memory controller stalls access to memory being refreshed ◦ Refresh takes energy (read/write) On 32Gb device, up to 20% of energy consumption and 30% of performance 7 Async vs Sync Refresh • Traditional refresh rates ◦ Async Standard (15.6us) ◦ Async Extended (125us) ◦ SDRAM - -
I.T.S.O. Powerpc an Inside View
SG24-4299-00 PowerPC An Inside View IBM SG24-4299-00 PowerPC An Inside View Take Note! Before using this information and the product it supports, be sure to read the general information under “Special Notices” on page xiii. First Edition (September 1995) This edition applies to the IBM PC PowerPC hardware and software products currently announced at the date of publication. Order publications through your IBM representative or the IBM branch office serving your locality. Publications are not stocked at the address given below. An ITSO Technical Bulletin Evaluation Form for reader′s feedback appears facing Chapter 1. If the form has been removed, comments may be addressed to: IBM Corporation, International Technical Support Organization Dept. JLPC Building 014 Internal Zip 5220 1000 NW 51st Street Boca Raton, Florida 33431-1328 When you send information to IBM, you grant IBM a non-exclusive right to use or distribute the information in any way it believes appropriate without incurring any obligation to you. Copyright International Business Machines Corporation 1995. All rights reserved. Note to U.S. Government Users — Documentation related to restricted rights — Use, duplication or disclosure is subject to restrictions set forth in GSA ADP Schedule Contract with IBM Corp. Abstract This document provides technical details on the PowerPC technology. It focuses on the features and advantages of the PowerPC Architecture and includes an historical overview of the development of the reduced instruction set computer (RISC) technology. It also describes in detail the IBM Power Series product family based on PowerPC technology, including IBM Personal Computer Power Series 830 and 850 and IBM ThinkPad Power Series 820 and 850. -
DDR ECC Reference Design to Improve Memory Reliability in 66Ak2gx-Based Systems
TI Designs: TIDEP-0070 DDR ECC Reference Design to Improve Memory Reliability in 66AK2Gx-Based Systems TI Designs Features This reference design describes system considerations • 32-bit DDR3L Interface With Optional 4-bit ECC for for the DDR-SDRAM memory interface with Error High-Reliability System Designs Correcting Code (ECC) support in high-reliability • Flexible System Configurations With DDR ECC applications based on the 66AK2Gx Multicore DSP + ® • Built-In Read-Modify-Write (RMW) Hardware ARM System-on-Chip (SoC). System interfaces, Supporting ECC Operation With Non-Aligned board hardware, software, throughput performance, Access and diagnostic procedures, are discussed. Detailed description about the DDR interface is available in the • Minimum Performance Impact device Technical Reference Manual (TRM). • Implemented and tested on EVMK2G Hardware and Supported in Processor SDK for K2G Design Resources Applications TIDEP0070 Design Folder • Automotive Audio Amplifiers 66AK2G02 Product Folder • Home Audio 66AK2G12 Product Folder K2G General Purpose • Professional Audio EVM Tool Folder EVM • Power Protection Processor SDK for K2G Download Software • Industrial Communications and Controls ASK Our E2E Experts 66AK2G DDREMIF Control Address Data Device_0 … … Device_n Device_ECC An IMPORTANT NOTICE at the end of this TI reference design addresses authorized use, intellectual property matters and other important disclaimers and information. TIDUBO4B–April 2016–Revised June 2018 DDR ECC Reference Design to Improve Memory Reliability in 66AK2Gx-