PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS
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Annual Review 2008 1
UCL DEPARTMENT OF PHYSICS AND ASTRONOMY PHYSICS AND ASTRONOMY ANNUAL REVIEW 2008 Contents Introduction 1 Students 2 Careers 5 Highlights and News 8 Astrophysics 17 High Energy Physics 19 Atomic, Molecular, Optical and Position Physics 21 Condensed Matter and Material Physics 25 Grants and Contracts 27 Publications 31 Staff 40 Cover image: Threaded molecular wire This image was produced by Dr Sergio Brovelli and refers to recent results obtained by the group of Professor Franco Cacialli. The molecular wire consists of a semiconducting conjugated polymer supramolecularly encapsulated (i.e. with no covalent bonds) into cyclodextrin macrocycles (in green). This class of organic functional materials gives highly controllable optical properties and higher luminescence efficiency when employed as the active layer in light-emitting diodes. The supramolecular shield prevents potentially detrimental intermolecular interactions and preserves single-molecule photophysics even at high concentration. PHYSICS AND ASTRONOMY ANNUAL REVIEW 2008 1 Introduction in trying to help pilot STFC through maintaining a flourishing Department. very choppy waters and as major It is therefore with particular pleasure recipients of their funding support. Our that I note the award of no less than six Astrophysics group were particularly long-term Fellowships to young scientists unfortunate in the timing of the crisis, wishing to start their independent as it arrived just as the majority of the academic careers at UCL, see page 8. groups funding was due to be renewed. These Fellowships are deeply UCL has moved to ensure that years competitive as they attract world wide of research excellence in fundamental attention resulting in success rates of physics are not destroyed by what I hope 5% or less. -
Effect of Bath Temperature on the Electrodeposition of Snse Thin
The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell. -
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Electronic Structure of Designed [(Snse)1+D ]M [Tise2]
Invited Paper DOI: 10.1557/jmr.2019.128 Electronic structure of designed [(SnSe)1+d]m[TiSe2]2 heterostructure thin films with tunable layering sequence https://doi.org/10.1557/jmr.2019.128 . Fabian Göhler1 , Danielle M. Hamann2, Niels Rösch1, Susanne Wolff1, Jacob T. Logan2, Robert Fischer2, Florian Speck1, David C. Johnson2, Thomas Seyller1,a) 1Institute of Physics, Chemnitz University of Technology, D-09126 Chemnitz, Germany 2Department of Chemistry, University of Oregon, Eugene, Oregon 97401, USA a)Address all correspondence to this author. e-mail: [email protected] Received: 18 February 2019; accepted: 21 March 2019 fi m A series of [(SnSe)1+d]m[TiSe2]2 heterostructure thin lms built up from repeating units of bilayers of SnSe and two layers of TiSe2 were synthesized from designed precursors. The electronic structure of the films was https://www.cambridge.org/core/terms investigated using X-ray photoelectron spectroscopy for samples with m = 1, 2, 3, and 7 and compared to binary samples of TiSe2 and SnSe. The observed binding energies of core levels and valence bands of the heterostructures are largely independent of m. For the SnSe layers, we can observe a rigid band shift in the heterostructures compared to the binary, which can be explained by electron transfer from SnSe to TiSe2. The electronic structure of the TiSe2 layers shows a more complicated behavior, as a small shift can be observed in the valence band and Se3d spectra, but the Ti2p core level remains at a constant energy. Complementary UV photoemission spectroscopy measurements confirm a charge transfer mechanism where the SnSe layers donate electrons into empty Ti3d states at the Fermi energy. -
Designing Isoelectronic Counterparts to Layered Group V Semiconductors
Designing isoelectronic counterparts to layered group V semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Tom´anek∗ Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA In analogy to III-V compounds, which have significantly broadened the scope of group IV semi- conductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semi- conductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. INTRODUCTION RESULTS AND DISCUSSION 2D semiconductors of group V elements, including Since all atoms in sp3 layered structures of group V el- phosphorene and arsenene, have been rapidly attract- ements are threefold coordinated, the different allotropes ing interest due to their significant fundamental band can all be topologically mapped onto the honeycomb lat- gap, large density of states near the Fermi level, and tice of graphene with 2 sites per unit cell.[11] An easy high and anisotropic carrier mobility[1{4]. Combina- way to generate IV-VI compounds that are isoelectronic tion of these properties places these systems very favor- to group V monolayers is to occupy one of these sites by ably in the group of contenders for 2D electronics ap- a group IV and the other by a group VI element. -
Ethnographic Atlas of Rajasthan
PRG 335 (N) 1,000 ETHNOGRAPHIC ATLAS OF RAJASTHAN (WITH REFERENCE TO SCHEDULED CASTES & SCHEDULED TRIBES) U.B. MATHUR OF THE RAJASTHAN STATISTICAL SERVICE Deputy Superintendent of Census Operations, Rajasthan. GANDHI CENTENARY YEAR 1969 To the memory of the Man Who spoke the following Words This work is respectfully Dedicated • • • • "1 CANNOT CONCEIVE ANY HIGHER WAY OF WORSHIPPING GOD THAN BY WORKING FOR THE POOR AND THE DEPRESSED •••• UNTOUCHABILITY IS REPUGNANT TO REASON AND TO THE INSTINCT OF MERCY, PITY AND lOVE. THERE CAN BE NO ROOM IN INDIA OF MY DREAMS FOR THE CURSE OF UNTOUCHABILITy .•.. WE MUST GLADLY GIVE UP CUSTOM THAT IS AGA.INST JUSTICE, REASON AND RELIGION OF HEART. A CHRONIC AND LONG STANDING SOCIAL EVIL CANNOT BE SWEPT AWAY AT A STROKE: IT ALWAYS REQUIRES PATIENCE AND PERSEVERANCE." INTRODUCTION THE CENSUS Organisation of Rajasthan has brought out this Ethnographic Atlas of Rajasthan with reference to the Scheduled Castes and Scheduled Tribes. This work has been taken up by Dr. U.B. Mathur, Deputy Census Superin tendent of Rajasthan. For the first time, basic information relating to this backward section of our society has been presented in a very comprehensive form. Short and compact notes on each individual caste and tribe, appropriately illustrated by maps and pictograms, supported by statistical information have added to the utility of the publication. One can have, at a glance. almost a complete picture of the present conditions of these backward communities. The publication has a special significance in the Gandhi Centenary Year. The publication will certainly be of immense value for all official and Don official agencies engaged in the important task of uplift of the depressed classes. -
EPSRC Service Level Agreement with STFC for Computational Science Support
CoSeC Computational Science Centre for Research Communities EPSRC Service Level Agreement with STFC for Computational Science Support FY 2016/17 Report and Update on FY 2017/18 Work Plans This document contains the 2016/17 plans, 2016/17 summary reports, and 2017/18 plans for the programme in support of CCP and HEC communities delivered by STFC and funded by EPSRC through a Service Level Agreement. Notes in blue are in-year updates on progress to the tasks included in the 2016/17 plans. Text highlighted in yellow shows changes to the draft 2017/18 plans that we submitted in January 2017. Contents CCP5 – Computer Simulation of Condensed Phases .......................................................................... 4 CCP5 – 2016 / 17 Plans (1 April 2016 – 31 March 2017) ...................................................... 4 CCP5 – Summary Report (1 April 2016 – 31 March 2017) .................................................... 7 CCP5 –2017 / 18 Plans (1 April 2017 – 31 March 2018) ....................................................... 8 CCP9 – Electronic Structure of Solids .................................................................................................. 9 CCP9 – 2016 / 17 Plans (1 April 2016 – 31 March 2017) ...................................................... 9 CCP9 – Summary Report (1 April 2016 – 31 March 2017) .................................................. 11 CCP9 – 2017 / 18 Plans (1 April 2017 – 31 March 2018) .................................................... 12 CCP-mag – Computational Multiscale -
Final Electoral Roll / Voter List (Alphabetical), Election - 2018
THE BAR COUNCIL OF RAJASTHAN HIGH COURT BUILDINGS, JODHPUR FINAL ELECTORAL ROLL / VOTER LIST (ALPHABETICAL), ELECTION - 2018 [As per order dt. 14.12.2017 as well as orders dt.23.08.2017 & 24.11.2017 Passed by Hon'ble Supreme Court of India in Transfer case (Civil) No. 126/2015 Ajayinder Sangwan & Ors. V/s Bar Council of Delhi and BCI Rules.] AT UDAIPUR IN UDAIPUR JUDGESHIP LOCATION OF POLLING STATION :- BAR ROOM, JUDICIAL COURTS, UDAIPUR DATE 01/01/2018 Page 1 ----------------------------------------------------------------------------------------------------------------------------- ------------------------------ Electoral Name as on the Roll Electoral Name as on the Roll Number Number ----------------------------------------------------------------------------------------------------------------------------- ------------------------------ ' A ' 77718 SH.AADEP SINGH SETHI 78336 KUM.AARTI TAILOR 67722 SH.AASHISH KUMAWAT 26226 SH.ABDUL ALEEM KHAN 21538 SH.ABDUL HANIF 76527 KUM.ABHA CHOUDHARY 35919 SMT.ABHA SHARMA 45076 SH.ABHAY JAIN 52821 SH.ABHAY KUMAR SHARMA 67363 SH.ABHIMANYU MEGHWAL 68669 SH.ABHIMANYU SHARMA 56756 SH.ABHIMANYU SINGH 68333 SH.ABHIMANYU SINGH CHOUHAN 64349 SH.ABHINAV DWIVEDI 74914 SH.ABHISHEK KOTHARI 67322 SH.ABHISHEK PURI GOSWAMI 45047 SMT.ADITI MENARIA 60704 SH.ADITYA KHANDELWAL 67164 KUM.AISHVARYA PUJARI 77261 KUM.AJAB PARVEEN BOHRA 78721 SH.AJAY ACHARYA 76562 SH.AJAY AMETA 40802 SH.AJAY CHANDRA JAIN 18210 SH.AJAY CHOUBISA 64072 SH.AJAY KUMAR BHANDARI 49120 SH.AJAY KUMAR VYAS 35609 SH.AJAY SINGH HADA 75374 SH.AJAYPAL -
INVESTIGATIONS on STRUCTURE and PROPERTIES of Ge-As-Se CHALCOGENIDE GLASSES Ting Wang April 2017 a Thesis Submitted for the Degr
INVESTIGATIONS ON STRUCTURE AND PROPERTIES OF Ge-As-Se CHALCOGENIDE GLASSES Ting Wang April 2017 A thesis submitted for The degree of Doctor of Philosophy of The Australian National University The Laser Physics Centre Research School of Physics & Engineering The Australian National University STATEMENT I declare that the work presented in this thesis is, to the best of my knowledge, the result of original research. The thesis has not been submitted for a degree or diploma to any other university or institution. Part of the research included in this thesis has been performed jointly with Professor Pierre Lucas. Signed Ting Wang ACKNOWLEDGEMENTS I would like to sincerely thank my supervisor and advisors, Professor Barry Luther-Davis, Dr. Rongping Wang and Dr. Xin Gai for their guidance, advice and thoughtful comments throughout this work. I would like to express my thanks to Dr. Zhiyong Yang, Dr. Duk-Yong Choi, Dr. Steve Madden, Dr. Vu Khu for sharing their knowledge and expertise in glass science. I would also like to thank Professor Ian Jackson, Mr Sukanta Debbarma and Mrs Maryla Krolikowska for their help in experiments. Particularly thanks to Professor Pierre Lucas and Mr Ozgur Gulbiten for providing useful samples, valuable suggestions and great assistance on the interpretation of the thermal data. Thanks to all students who work in the laser physics center: Yi Yu, Pan Ma, Kunlun Yan, Joseph Sudhakar Paulraj and Yue Sun. Thanks to my parents, for their encouragement and great support during my PhD. I TABLE OF CONTENTS TABLE OF CONTENTS ................................................................................................. i LIST OF FIGURES........................................................................................................iii LIST OF TABLES ........................................................................................................viii LIST OF ABBREVIATIONS ....................................................................................... -
Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe. -
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´Nek*
ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´nek* Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States ABSTRACT In analogy to IIIÀV compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IVÀVI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like R-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both R-SiS and β- SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. KEYWORDS: silicon sulfide . isoelectronic . phosphorene . ab initio . electronic band structure wo-dimensional semiconductors of monosulfide (SiS). We use ab initio density Tgroup V elements, including phos- functional theory (DFT) to identify stable phorene and arsenene, have been allotropes and determine their equilibrium rapidly attracting interest due to their sig- geometry and electronic structure. We have nificant fundamental band gap, large den- identified two nearly equally stable allo- sity of states near the Fermi level, and high tropes, namely, the black-phosphorus-like and anisotropic carrier mobility.1À4 Combi- R-SiS and the blue-phosphorus-like β-SiS, nation of these properties places these and show their structure in Figure 1a and d. -
LAP Scope of Accreditation
TESTING AND CALIBRATION LABORATORY ACCREDITATION PROGRAM (LAP) Scope of Accreditation Accredited Laboratory No. 474 Legal Name of Accredited Laboratory: National Research Council Canada, Metrology Research Centre GDMS TEST UNIT, CHEMICAL METROLOGY Location Name or Operating as (if applicable): Ottawa, ON Contact Name: Bradley Methven Address: 1200 Montreal Road Ottawa, ON K1A 0R6 Telephone: +1 613 998 4237 FAX: +1 613 993 2451 Website: https://nrc.canada.ca/en/research- development/products-services/technical- advisory-services/glow-discharge-mass- spectrometry-gdms-analysis Email: [email protected] SCC File Number: 15592 Accreditation Standard(s): ISO/IEC 17025:2017 Fields of Testing: Chemical/Physical Initial Accreditation: 2002-10-24 Most Recent Accreditation: 2020-02-26 Accreditation Valid to: 2022-10-24 CHEMICALS AND CHEMICAL PRODUCTS 1 | ASB_JA_LAP-Scope-Template-Testing_v1_2019-09-29 Chemical Compounds: (not elsewhere specified) Inorganic Glow discharge mass spectrometric analysis of high purity metals and semiconductor materials Silver, Aluminum, Arsenic, Gold, Bismuth Oxide, Bismuth Telluride, Bismuth, Beryllium, Carbon, Cadmium, Cadmium Selenide, Cadmium Telluride, Cadmium Tellurium Selenide, Cadmium Zinc Telluride, Cobalt, Chromium, Copper, Iron, Gallium, Gallium Arsenide, Gallium Oxide, Gallium Phosphide, Gallium Antimonide, Germanium, Germanium Oxide, Germanium Selenide, Mercury Telluride, Indium, Indium Arsenide, Indium Phosphide, Indium Antimonide, Magnesium, Manganese, Molybdenum, Nickel, Lead, Lead/Tin, PMN-PT, Rhenium, Antimony, Selenium, Silicon, Silica, Tin, Tantalum, Tellurium Oxide, Tellurium, Titanium, Thallium, Tungsten, Vanadium, Zinc, Zinc Oxide, Zinc Selenide, Zinc Telluride, Zirconium Purity analysis of metals (Al, Ag, As, Au, Be, Cd, Co, Cr, Cu, Fe, Mg, Mn, Mo, Ni, Pb, Sb, Se, Sn, Te, Ti, V, Zn) having amount content in the range 0.999 kg/kg to 0.9999999 kg/kg with associated expanded uncertainties (k=2) of 0.005 kg/kg to 0.0000005 kg/kg. -
Compliance Or Defiance? the Case of Dalits and Mahadalits
Kunnath, Compliance or defiance? COMPLIANCE OR DEFIANCE? THE CASE OF DALITS AND MAHADALITS GEORGE KUNNATH Introduction Dalits, who remain at the bottom of the Indian caste hierarchy, have resisted social and economic inequalities in various ways throughout their history.1 Their struggles have sometimes taken the form of the rejection of Hinduism in favour of other religions. Some Dalit groups have formed caste-based political parties and socio-religious movements to counter upper-caste domination. These caste-based organizations have been at the forefront of mobilizing Dalit communities in securing greater benefits from the Indian state’s affirmative action programmes. In recent times, Dalit organizations have also taken to international lobbying and networking to create wider platforms for the promotion of Dalit human rights and development. Along with protest against the caste system, Dalit history is also characterized by accommodation and compliance with Brahmanical values. The everyday Dalit world is replete with stories of Dalit communities consciously or unconsciously adopting upper-caste beliefs and practices. They seem to internalize the negative images and representations of themselves and their castes that are held and propagated by the dominant groups. Dalits are also internally divided by caste, with hierarchical rankings. They themselves thus often seem to reinforce and even reproduce the same system and norms that oppress them. This article engages with both compliance and defiance by Dalit communities. Both these concepts are central to any engagement with populations living in the context of oppression and inequality. Debates in gender studies, colonial histories and subaltern studies have engaged with the simultaneous existence of these contradictory processes.