DOCSLIB.ORG

Electronic Structure of Designed [(Snse)1+D ]M [Tise2]

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Electronic Structure of Designed [(Snse)1+D ]M [Tise2] Invited Paper DOI: 10.1557/jmr.2019.128 Electronic structure of designed [(SnSe)1+d]m[TiSe2]2 heterostructure thin films with tunable layering sequence https://doi.org/10.1557/jmr.2019.128 . Fabian Göhler1 , Danielle M. Hamann2, Niels Rösch1, Susanne Wolff1, Jacob T. Logan2, Robert Fischer2, Florian Speck1, David C. Johnson2, Thomas Seyller1,a) 1Institute of Physics, Chemnitz University of Technology, D-09126 Chemnitz, Germany 2Department of Chemistry, University of Oregon, Eugene, Oregon 97401, USA a)Address all correspondence to this author. e-mail: [email protected] Received: 18 February 2019; accepted: 21 March 2019 fi m A series of [(SnSe)1+d]m[TiSe2]2 heterostructure thin lms built up from repeating units of bilayers of SnSe and two layers of TiSe2 were synthesized from designed precursors. The electronic structure of the films was https://www.cambridge.org/core/terms investigated using X-ray photoelectron spectroscopy for samples with m = 1, 2, 3, and 7 and compared to binary samples of TiSe2 and SnSe. The observed binding energies of core levels and valence bands of the heterostructures are largely independent of m. For the SnSe layers, we can observe a rigid band shift in the heterostructures compared to the binary, which can be explained by electron transfer from SnSe to TiSe2. The electronic structure of the TiSe2 layers shows a more complicated behavior, as a small shift can be observed in the valence band and Se3d spectra, but the Ti2p core level remains at a constant energy. Complementary UV photoemission spectroscopy measurements confirm a charge transfer mechanism where the SnSe layers donate electrons into empty Ti3d states at the Fermi energy. Introduction sequence is limited to a few thermodynamically stable compounds accessible via high-temperature synthesis , subject to the Cambridge Core terms of use, available at The stacking of two-dimensional layers into heterostruc- tures with emerging properties is currently at the forefront approaches [10, 11, 12]. Preparing samples with the desired stacking arrangements of materials science research [1, 2, 3, 4, 5]. Understanding is a great challenge in the experimental study of two- the interactions between layers is of paramount importance, dimensional materials and heterostructures. High-quality sam- especially when considering the effects of different stacking ples and devices can be prepared by manual mechanical arrangements. For example, single layers of graphene exhibit stacking of exfoliated layers [13]. To pave the way toward much improved carrier mobility when they are placed on [6] www.mrs.org/jmr wafer scale production, different scalable manufacturing tech- j or encapsulated between [7] hexagonal boron nitride instead niques, such as sequential chemical vapor deposition (CVD), of resting on a silicon oxide substrate, and the super- direct growth of TMDC heterostructures by vapor–solid conducting critical temperature of the NbSe2 layers in Jun 28, 2019 reactions, and van der Waals epitaxy, have been under j [(SnSe)11d]m(NbSe2)1 is found to decrease with increasing consideration [14], but different growth conditions for each SnSe content due to charge transfer between layers [8]. layer limit the complexity that may be achieved [15]. Issue 12 j . University of Oregon Library, on 03 Jul 2019 at 15:24:25 Changing the composition and stacking sequence of layers A developing approach to heterostructures that enables in heterostructures consisting of MoS2 and WS2 allows for wafer scale samples is the self-assembly of designed precursors the fabrication of devices with tunable tunnel resistance or consisting of a repeating sequence of deposited elemental Volume 34 j band-engineered tunnel diodes [9]. The misfit layer chalco- layers. By precisely controlling constituents and layering genides, consisting of alternating layers of a metal chalco- sequences of the precursors, a virtually unlimited number of genide and a transition metal dichalcogenide (TMDC), are heterostructures can be realized experimentally [16, 17]. While a promising class of materials for thermoelectric applica- this self-assembly approach can produce specific stacking https://www.cambridge.org/core tions, but the control over composition and layering sequences, the rotational orientation of the layers cannot be Journal of Materials Research j ª Materials Research Society 2019 cambridge.org/JMR 1965 Downloaded from Invited Paper controlled, resulting in a random rotational alignment of the prior studies. An annealing study completed on TiSe2 pre- layers with respect to each other [18]. viously reports the ideal annealing temperature to be 350 °C for Here, we explore the electronic properties of [(SnSe)11d]m 30 min when annealed in an N2 atmosphere with less than 0.5 fi (TiSe2)n heterostructures, consisting of m bilayers of SnSe and ppm of oxygen present [29]. In a recent study, SnSe lms were n layers of TiSe2 in the supercell. Prior research on the (MS)11d crystallized at 350 °C for 30 min in an N2 atmosphere [30]. fi 5 (TiS2)2 mis t layer compounds showed that the intergrowths An annealing study of the m 3 precursor was conducted containing M 5 Sn are of special interest for thermoelectric to determine the best annealing temperature to crystallize the fi applications [19], and high Seebeck coef cients sensitive to the targeted [(SnSe)11d]m[TiSe2]2 compounds. Figure 1 contains layering sequence have been observed in similar selenide the X-ray reflectivity (XRR), specular XRD, and in-plane XRD https://doi.org/10.1557/jmr.2019.128 5 . compounds grown via self-assembly of designed precursors data collected on the m 3 precursor as it was annealed at the [20, 21]. In contrast to the rotational disorder usually present in indicated temperatures for 30 min. The as deposited XRR samples prepared by this synthesis approach, samples with pattern contains both Kiessig fringes and the first three Bragg m 5 n 5 1 showed relatively large regions with long-range order reflections resulting from the repeating sequence of elemental [22]. A series of samples with m 5 1, ..., 4 and n 5 1 showed layers. The Kiessig fringes result from interference between the unusual transport behavior [23], emphasizing the importance of front and back of the film and depend on the smoothness of furthering the understanding of the electronic interactions in this these interfaces. As the sample is annealed at increasing kind of system. Finding proof for the presence of a potential temperatures, the fringes extend out to higher angles indicating charge transfer into TiSe2 is of special interest, since the smoother interfaces. Above 450 °C, the Kiessig fringes decrease https://www.cambridge.org/core/terms fi controlled doping of TiSe2 can be used to nely tune electronic in intensity. By 500 °C, the Kiessig fringes are gone, indicating transitions such as charge density waves or superconductivity that the film has become significantly rougher. The diffraction [24, 25]. X-ray photoelectron spectroscopy (XPS) has proven to maxima in the XRR scans result from the artificial layering of be an effective method to investigate the electronic structure of the designed precursor from the sequence of deposited ele- these systems, as evidence for electron transfer from the metal mental layers. As the sample is annealed to higher temper- selenide layer (M 5 Pb or Sn) into the transition metal atures, these reflections shift to higher angles, indicating that fl dichalcogenide layer was found for (MSe)11d(NbSe2)2 [26]. In the repeat unit thickness is getting smaller. The re ections this work, photoelectron spectroscopy was used on a series of become commensurate with the 00l reflections present at 5 fi [(SnSe)11d]m[TiSe2]2 compounds with m 1, 2, 3, and 7, as well higher angles as the arti cial layering evolves into the product. as binary samples of the constituents TiSe2 and SnSe. Above 450 °C, the Bragg reflections decrease in intensity. After the 500 °C annealing, some of the Bragg reflections are no longer visible, indicating that the metastable product is decom- Synthesis and structure posing. The reflections in the as-deposited specular diffraction , subject to the Cambridge Core terms of use, available at fl Binary SnSe and TiSe2 and a series of [(SnSe)11d]m[TiSe2]2 pattern can all be indexed as 00l re ections. As the sample is heterostructures with m 5 1, 2, 3, and 7 and were prepared annealed at increasing temperatures, additional reflections from designed amorphous precursors by physical vapor de- grow in and the reflections systematically shift to higher angles, position. A repeating sequence of elemental Ti, Sn, and Se indicating that the c-axis lattice parameter is decreasing. The layers was deposited in an order that mimicked the architecture diffraction pattern after annealing at 350 °C contains the most of the desired product [20, 23, 27]. For example, to make the m reflections. After annealing at this temperature, the reflections www.mrs.org/jmr 5 2 compound, the repeating sequence TijSejTijSejSnjSejSnjSe all have similar line widths and can be indexed as 00l j j j fl was deposited. For the Sn Se and Ti Se bilayers, a 1:1 ratio of Sn reflections of [(SnSe)11d]m[TiSe2]2. The re ections broaden to Se and a 1:2 ratio of Ti to Se, respectively, were targeted with and are reduced in intensity when annealed at 400 °C or higher, Jun 28, 2019 a layer thickness similar to that of the desired product. The indicating that the desired product is decomposing. The in- j sequence of bilayers was repeated until a sample of about plane diffraction pattern of the as deposited sample contains 50 nm in total film thickness was reached. The amount of reflections that can be indexed as those from a rectangular and Issue 12 j . University of Oregon Library, on 03 Jul 2019 at 15:24:25 material required to obtain the correct ratio in the SnjSe layers a hexagonal unit cell.
Load more

Recommended publications
  • Effect of Bath Temperature on the Electrodeposition of Snse Thin
    The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell.
    [Show full text]
  • PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS
    PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS BIOSCIENCES Altered energy transfer in Phycobilisomes of the Cyanobacterium, Spirulina Platensis under 1 - 3 the influence of Chromium (III) Ayya Raju, M. and Murthy, S. D. S. PRAJNA Volume 19, 2011 Biotransformation of 11β , 17 α -dihydroxy-4-pregnene-3, 20-dione-21-o-succinate to a 4 - 7 17-ketosteroid by Pseudomonas Putida MTCC 1259 in absence of 9α -hydroxylase inhibitors Rahul Patel and Kirti Pawar Influence of nicking in combination with various plant growth substances on seed 8 - 10 germination and seedling growth of Noni (Morinda Citrifolia L.) Karnam Jaya Chandra and Dasari Daniel Gnana Sagar Quantitative analysis of aquatic Macrophytes in certain wetlands of Kachchh District, 11 - 13 Journal of Pure and Applied Sciences Gujarat J.P. Shah, Y.B. Dabgar and B.K. Jain Screening of crude root extracts of some Indian plants for their antibacterial activity 14 - 18 Purvesh B. Bharvad, Ashish R. Nayak, Naynika K. Patel and J. S. S. Mohan ________ Short Communication Heterosis for biometric characters and seed yield in parents and hybrids of rice 19 - 20 (Oryza Sativa L.) M. Prakash and B. Sunil Kumar CHEMISTRY Adsorption behavior and thermodynamics investigation of Aniline-n- 21 - 24 (p-Methoxybenzylidene) as corrosion inhibitor for Al-Mg alloy in hydrochloric acid V.A. Panchal, A.S. Patel and N.K. Shah Grafting of Butyl Acrylate onto Sodium Salt of partially Carboxymethylated Guar Gum 25 - 31 using Ceric Ions J.H. Trivedi, T.A. Bhatt and H.C. Trivedi Simultaneous equation and absorbance ratio methods for estimation of Fluoxetine 32 - 36 Hydrochloride and Olanzapine in tablet dosage form Vijaykumar K.
    [Show full text]
  • Designing Isoelectronic Counterparts to Layered Group V Semiconductors
    Designing isoelectronic counterparts to layered group V semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Tom´anek∗ Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA In analogy to III-V compounds, which have significantly broadened the scope of group IV semi- conductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semi- conductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. INTRODUCTION RESULTS AND DISCUSSION 2D semiconductors of group V elements, including Since all atoms in sp3 layered structures of group V el- phosphorene and arsenene, have been rapidly attract- ements are threefold coordinated, the different allotropes ing interest due to their significant fundamental band can all be topologically mapped onto the honeycomb lat- gap, large density of states near the Fermi level, and tice of graphene with 2 sites per unit cell.[11] An easy high and anisotropic carrier mobility[1{4]. Combina- way to generate IV-VI compounds that are isoelectronic tion of these properties places these systems very favor- to group V monolayers is to occupy one of these sites by ably in the group of contenders for 2D electronics ap- a group IV and the other by a group VI element.
    [Show full text]
  • Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
    Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe.
    [Show full text]
  • ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´Nek*
    ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´nek* Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States ABSTRACT In analogy to IIIÀV compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IVÀVI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like R-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both R-SiS and β- SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. KEYWORDS: silicon sulfide . isoelectronic . phosphorene . ab initio . electronic band structure wo-dimensional semiconductors of monosulfide (SiS). We use ab initio density Tgroup V elements, including phos- functional theory (DFT) to identify stable phorene and arsenene, have been allotropes and determine their equilibrium rapidly attracting interest due to their sig- geometry and electronic structure. We have nificant fundamental band gap, large den- identified two nearly equally stable allo- sity of states near the Fermi level, and high tropes, namely, the black-phosphorus-like and anisotropic carrier mobility.1À4 Combi- R-SiS and the blue-phosphorus-like β-SiS, nation of these properties places these and show their structure in Figure 1a and d.
    [Show full text]
  • Bacterial Selenoproteins: a Role in Pathogenesis and Targets for Antimicrobial Development
    University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2009 Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development Sarah Rosario University of Central Florida Part of the Medical Sciences Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Rosario, Sarah, "Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development" (2009). Electronic Theses and Dissertations, 2004-2019. 3822. https://stars.library.ucf.edu/etd/3822 BACTERIAL SELENOPROTEINS: A ROLE IN PATHOGENESIS AND TARGETS FOR ANTIMICROBIAL DEVELOPMENT. by SARAH E. ROSARIO B.S. Florida State University, 2000 M.P.H. University of South Florida, 2002 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Burnett School of Biomedical Sciences in the College of Medicine at the University of Central Florida Orlando, Florida Summer Term 2009 Major Professor: William T. Self © 2009 Sarah E. Rosario ii ABSTRACT Selenoproteins are unique proteins in which selenocysteine is inserted into the polypeptide chain by highly specialized translational machinery. They exist within all three kingdoms of life. The functions of these proteins in biology are still being defined. In particular, the importance of selenoproteins in pathogenic microorganisms has received little attention. We first established that a nosocomial pathogen, Clostridium difficile, utilizes a selenoenzyme dependent pathway for energy metabolism.
    [Show full text]
  • High Purity Inorganics
    High Purity Inorganics www.alfa.com INCLUDING: • Puratronic® High Purity Inorganics • Ultra Dry Anhydrous Materials • REacton® Rare Earth Products www.alfa.com Where Science Meets Service High Purity Inorganics from Alfa Aesar Known worldwide as a leading manufacturer of high purity inorganic compounds, Alfa Aesar produces thousands of distinct materials to exacting standards for research, development and production applications. Custom production and packaging services are part of our regular offering. Our brands are recognized for purity and quality and are backed up by technical and sales teams dedicated to providing the best service. This catalog contains only a selection of our wide range of high purity inorganic materials. Many more products from our full range of over 46,000 items are available in our main catalog or online at www.alfa.com. APPLICATION FOR INORGANICS High Purity Products for Crystal Growth Typically, materials are manufactured to 99.995+% purity levels (metals basis). All materials are manufactured to have suitably low chloride, nitrate, sulfate and water content. Products include: • Lutetium(III) oxide • Niobium(V) oxide • Potassium carbonate • Sodium fluoride • Thulium(III) oxide • Tungsten(VI) oxide About Us GLOBAL INVENTORY The majority of our high purity inorganic compounds and related products are available in research and development quantities from stock. We also supply most products from stock in semi-bulk or bulk quantities. Many are in regular production and are available in bulk for next day shipment. Our experience in manufacturing, sourcing and handling a wide range of products enables us to respond quickly and efficiently to your needs. CUSTOM SYNTHESIS We offer flexible custom manufacturing services with the assurance of quality and confidentiality.
    [Show full text]
  • Annex XV Dossier PROPOSAL for IDENTIFICATION of a SUBSTANCE AS a CATEGORY 1A OR 1B CMR, PBT, Vpvb OR a SUBSTANCE of an EQUIVALEN
    ANNEX XV – IDENTIFICATION OF HYDRAZINE AS SVHC Annex XV dossier PROPOSAL FOR IDENTIFICATION OF A SUBSTANCE AS A CATEGORY 1A OR 1B CMR, PBT, vPvB OR A SUBSTANCE OF AN EQUIVALENT LEVEL OF CONCERN Substance Name(s): Hydrazine EC Number(s): 206-114-9 CAS Number(s): 302-01-2 Submitted by: European Chemical Agency on request of the European Commission Version: February 2011 PUBLIC VERSION: This report does not include the Confidential Annexes referred to in Part II. 1 ANNEX XV – IDENTIFICATION OF HYDRAZINE AS SVHC CONTENTS PROPOSAL FOR IDENTIFICATION OF A SUBSTANCE AS A CATEGORY 1A OR 1B CMR, PBT, VPVB OR A SUBSTANCE OF AN EQUIVALENT LEVEL OF CONCERN ................................................................................7 PART I..........................................................................................................................................................................8 JUSTIFICATION .........................................................................................................................................................8 1 IDENTITY OF THE SUBSTANCE AND PHYSICAL AND CHEMICAL PROPERTIES .................................8 1.1 Name and other identifiers of the substance...................................................................................................8 1.2 Composition of the substance.........................................................................................................................9 1.3 Physico-chemical properties...........................................................................................................................9
    [Show full text]
  • (Snse) Thin Films
    Portland State University PDXScholar Dissertations and Theses Dissertations and Theses Winter 3-28-2019 Investigation of Electronic and Optical Properties of 2-Dimensional Semiconductor Tin Selenide (SnSe) Thin Films Shakila Afrin Portland State University Follow this and additional works at: https://pdxscholar.library.pdx.edu/open_access_etds Part of the Electrical and Computer Engineering Commons Let us know how access to this document benefits ou.y Recommended Citation Afrin, Shakila, "Investigation of Electronic and Optical Properties of 2-Dimensional Semiconductor Tin Selenide (SnSe) Thin Films" (2019). Dissertations and Theses. Paper 4862. https://doi.org/10.15760/etd.6738 This Thesis is brought to you for free and open access. It has been accepted for inclusion in Dissertations and Theses by an authorized administrator of PDXScholar. Please contact us if we can make this document more accessible: [email protected]. Investigation of Electronic and Optical Properties of 2-Dimensional Semiconductor Tin Selenide (SnSe) Thin Films by Shakila Afrin A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Electrical & Computer Engineering Thesis Committee: Raj Solanki, Chair Richard Campbell Shankar Rananavare Portland State University 2019 ©2018 Shakila Afrin Abstract Over the last 5 decades, the semiconductor industry has been well served by Si based technology due to its abundant availability, lower manufacturing cost, large wafer sizes and less complexity in fabrication. Over this period, electronic devices and integrated systems have been miniaturized by downscaling of the transistors. The miniaturization has been guided by the Moore's law where the numbers of transistors have doubled over every two years.
    [Show full text]
  • Thermoelectric Materials: Energy Conversion Between Heat and Electricity
    Accepted Manuscript Thermoelectric materials: energy conversion between heat and electricity Xiao Zhang, Li-Dong Zhao PII: S2352-8478(15)00025-8 DOI: 10.1016/j.jmat.2015.01.001 Reference: JMAT 11 To appear in: Journal of Materiomics Received Date: 10 January 2015 Revised Date: 19 January 2015 Accepted Date: 20 January 2015 Please cite this article as: Zhang X, Zhao L-D, Thermoelectric materials: energy conversion between heat and electricity, Journal of Materiomics (2015), doi: 10.1016/j.jmat.2015.01.001. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. ACCEPTED MANUSCRIPT Graphical Abstract This review summarizes the advanced and promising thermoelectrics, involve band engineering, hierarchical architechtures, and compounds with intrinsically low thermal conductivity. MANUSCRIPT ACCEPTED ACCEPTED MANUSCRIPT Review Article Thermoelectric materials: energy conversion between heat and electricity Xiao Zhang, Li-Dong Zhao* School of Materials Science and Engineering, Beihang University, Beijing 100191, China Corresponding author: [email protected] Received date:2015-01-10; Revised date:2015-01-19; Accepted date:2015-02-20 Abstract Thermoelectric materials have drawn vast attentions for centuries, because thermoelectric effects enable direct conversion between thermal and electrical energy, thus providing an alternative for power generation and refrigeration.
    [Show full text]
  • Enhancement of Thermoelectric Properties of Layered
    Rev. Adv. Mater. Sci. 2020; 59:371–398 Review Article Manal M. Alsalama*, Hicham Hamoudi, Ahmed Abdala, Zafar K. Ghouri, and Khaled M. Youssef Enhancement of Thermoelectric Properties of Layered Chalcogenide Materials https://doi.org/10.1515/rams-2020-0023 Received Dec 24, 2019; accepted Apr 27, 2020 1 Introduction Abstract: Thermoelectric materials have long been proven The demand for clean and sustainable energy sources is a to be effective in converting heat energy into electricity growing global concern as the cost of energy is rapidly in- and vice versa. Since semiconductors have been used in creasing; fossil fuel sources have been shown to affect the the thermoelectric field, much work has been done to im- environment. Considering that a large amount of our uti- prove their efficiency. The interrelation between their ther- lized energy is in the form of heat and that a large amount moelectric physical parameters (Seebeck coefficient, elec- of other forms of utilized energy is wasted as heat, the trical conductivity, and thermal conductivity) required spe- search for a suitable technology to recover this wasted cial tailoring in order to get the maximum improvement heat and limit its harmful effects is essential. Among sev- in their performance. Various approaches have been re- eral technologies used to meet these demands, thermoelec- ported in the research for developing thermoelectric per- tric energy is considered to be of the most interest due to formance, including doping and alloying, nanostructur- its unique capabilities. Thermoelectric generators can con- ing, and nanocompositing. Among different types of ther- vert wasted heat into electrical energy.
    [Show full text]
  • Electronic Band Structures for Tin Selenide Dr
    Electronic Band Structures for Tin Selenide Dr. HoSung Lee April 2, 2015 1 Car et al. (1978) – Istituto di Fisica del Politecnico, Milano Calculated bandgap: 2.1 eV Experimental value (Albers et al. (1962)): 0.9 eV 2 Soliman et al. (1995) – Dept. of Physics, Ain Shams University, Cairo 3 Lefebvre et al. (1998) – IEMN and LPMC, France 4 Makinistian and Albanesi (2009) – Universidad Nacional de Entre Rios, Argentina Indirect bandgap, C1-V1: 1.05 eV 5 Chen et al. (2012) – Tongji University, China Polycrystalline SnSe The band gap can be adjusted by doping element Te from 0.643 (no doping) to 0.608 eV (doping). Band gap: 0.643 eV 6 He et al. (2013) – Dept. of Material Science and Engineering, Nanjing Institute of Technology, China Direct energy gap: 0.8 eV Debye temperature: 215 K Gruneisen parameter: 2.98 7 Sun et al. (2013) – Chinese Academy of Sciences, China 8 Zhao et al. (2014) – Dept. of Chemistry, Northwestern University 9 Zhao et al. (2014) – Dept. of Chemistry, Northwestern University 10 Shi and Kioupakis (2015) – Dept. of Material Science and Engineering, University of Michigan 11 Shi and Kioupakis (2015) 12 Park et al. (2010) – Dept. of Physics, Missouri University of Science and Technology Scheidemantel et al. (2003) – Dept. of Physics, Pen State University 13 Shi and Kioupakis (2015) 14 Shi and Kioupakis (2015) 15 Experiments, Ab initio Experiments, Ab initio Semiclassical Soliman et al. Calculation, Zhao et al.(2014) Calculations, Shi and Nonparabolic Two-Band (1995) Chen et al. Kioupakis (2015) Kane Model (2012) (fit to measurements of Zhao et al.
    [Show full text]