(EMA 2020) ABSTRACT BOOK January 22–24

Total Page:16

File Type:pdf, Size:1020Kb

(EMA 2020) ABSTRACT BOOK January 22–24 The American Ceramic Society 2020 Conference on Electronic Materials and Applications (EMA 2020) ABSTRACT BOOK January 22–24, 2020 Orlando, Florida Introduction This volume contains abstracts for 333 presentations during the 2020 Conference on Electronic Materials and Applications (EMA 2020) in Orlando, Florida. The abstracts are reproduced as submitted by authors, a format that provides for longer, more detailed descriptions of papers. The American Ceramic Society accepts no responsibility for the content or quality of the abstract content. Abstracts are arranged by day, then by symposium and session title. An Author Index appears at the back of this book. The Meeting Guide contains locations of sessions with times, titles and authors of papers, but not presentation abstracts. How to Use the Abstract Book Refer to the Table of Contents to determine page numbers on which specific session abstracts begin. At the beginning of each session are headings that list session title, location and session chair. Starting times for presentations and paper numbers precede each paper title. The Author Index lists each author and the page number on which their abstract can be found. Copyright © 2020 The American Ceramic Society (www.ceramics.org). All rights reserved. MEETING REGULATIONS The American Ceramic Society is a nonprofit scientific organization that facilitates whether in print, electronic or other media, including The American Ceramic Society’s the exchange of knowledge meetings and publication of papers for future reference. website. By participating in the conference, you grant The American Ceramic Society The Society owns and retains full right to control its publications and its meetings. the right to use your name and photograph for such purposes. All postings become The Society has an obligation to protect its members and meetings from intrusion by the property of The American Ceramic Society. others who may wish to use the meetings for their own private promotion purpose. Literature found not to be in agreement with the Society’s goals, in competition with During oral sessions conducted during Society meetings, unauthorized Society services or of an offensive nature will not be displayed anywhere in the vicinity photography, videotaping and audio recording is prohibited. Failure to comply of the meeting. Promotional literature of any kind may not be displayed without the may result in the removal of the offender from the session or from the remainder of Society’s permission and unless the Society provides tables for this purpose. Literature the meeting. not conforming to this policy or displayed in other than designated areas will be disposed. The Society will not permit unauthorized scheduling of activities during Registration Requirements: Attendance at any meeting of the Society shall be its meeting by any person or group when those activities are conducted at its meeting limited to duly registered persons. place in interference with its programs and scheduled activities. The Society does not Disclaimer: Statements of fact and opinion are the responsibility of the authors object to appropriate activities by others during its meetings if it is consulted with alone and do not imply an opinion on the part of the officers, staff or members of The regard to time, place, and suitability. Any person or group wishing to conduct any American Ceramic Society. The American Ceramic Society assumes no responsibility activity at the time and location of the Society meeting must obtain permission from for the statements and opinions advanced by the contributors to its publications or the Executive Director or Director of Meetings, giving full details regarding desired by the speakers at its programs; nor does The American Ceramic Society assume time, place and nature of activity. any liability for losses or injuries suffered by attendees at its meetings. Registered Diversity Statement: The American Ceramic Society values diverse and inclusive names and trademarks, etc. used in its publications, even without specific indications participation within the field of ceramic science and engineering. ACerS strives thereof, are not to be considered unprotected by the law. Mention of trade names of to promote involvement and access to leadership opportunity regardless of race, commercial products does not constitute endorsement or recommendations for use ethnicity, gender, religion, age, sexual orientation, nationality, disability, appearance, by the publishers, editors or authors. geographic location, career path or academic level. Final determination of the suitability of any information, procedure or products Visit the registration desk if you need access to a nursing mother’s room or need for use contemplated by any user, and the manner of that use, is the sole responsibility further assistance. For childcare services, please check with the concierge at individual of the user. Expert advice should be obtained at all times when implementation is being hotels for a listing of licensed and bonded child care options. considered, particularly where hazardous materials or processes are encountered. The American Ceramic Society plans to take photographs and video at the Copyright © 2020. The American Ceramic Society (www.ceramics.org). All rights reserved. conference and reproduce them in educational, news or promotional materials, 2 Electronic Materials and Applications 2020 Table of Contents Wednesday, January 22, 2020 Plenary Session I ......................................................................... 7 S1: Characterization of Structure–Property Relationships in Functional Ceramics Probing Structure Property Correlations in Ceramics ...................................... 7 Advanced Electron Microscopy Methods for Characterization of Functional Ceramics ...... 8 S2: Advanced Electronic Materials: Processing Structures, Properties, and Applications Applications of Advanced Electronic Materials ........................................... 10 Electromechanical Properties and Structure of Bulk and Film Electronic Materials ......... 11 S3: Frontiers in Ferroic Oxides: Synthesis, Structure, Properties, and Applications Ferroelectric and Dielectric Oxides ....................................................... 13 Magnetism, Structure, and Defects in Transition Metal Oxides ............................ 14 S4: Complex Oxide Thin Film Materials Discovery: From Synthesis to Strain/Interface Engineered Emergent Properties Enhanced Functionality through Advanced Synthesis .................................... 16 Advanced Complex Oxide Thin Film Synthesis I .......................................... 17 Advanced Synthesis II ................................................................... 18 S8: Structure–Property Relationships in Relaxor Ceramics Local Structure of Relaxors I ............................................................. 20 Local Structure of Relaxors II ............................................................. 22 Perovskite/Non-perovskite Relaxors I .................................................... 22 S10: Point Defects and Transport in Ceramics Predictive Point Defect Energetics and Equilibria from Density Functional Theory and other Computational Methods............................................... 23 Structure and Mobility of Defects and Defect Complexes ................................. 25 Electronic Materials and Applications 2020 3 S12: Electronic Materials Applications in 5G Telecommunications Industry and 5G ......................................................................... 26 Theory, Modeling, and New Measurement Modalities in 5G............................... 28 S14: Agile Design of Electronic Materials: Aligned Computational and Experimental Approaches and Materials Informatics Materials by Design ..................................................................... 29 Predictive Modeling/Novel Phenomena.................................................. 31 Poster Session......................................................................................................... 33 Thursday, January 23, 2020 Plenary Session II........................................................................ 40 S1: Characterization of Structure–Property Relationships in Functional Ceramics Probing Defects and Disorder in Functional Ceramics..................................... 40 S2: Advanced Electronic Materials: Processing Structures, Properties, and Applications Lead-free and Relaxor Ferroelectircs ..................................................... 41 Synthesis of Electronic Materials and the Role of Defects.................................. 42 S3: Frontiers in Ferroic Oxides: Synthesis, Structure, Properties, and Applications Ferroelectric Architectures and Devices .................................................. 44 S4: Complex Oxide Thin Film Materials Discovery: From Synthesis to Strain/Interface Engineered Emergent Properties Engineered Interface Phenomena I ...................................................... 45 Engineered Interface Phenomena II ...................................................... 46 Machine Learning Driven Synthesis ...................................................... 47 S6: Complex Oxide and Chalcogenide Semiconductors: Research and Applications Design and Discovery of Complex-Structured Semiconductors ........................... 48 4 Electronic Materials and Applications 2020 S7: Superconducting and Magnetic Materials: From Basic Science to Applications Superconducting and Magnetic
Recommended publications
  • Effect of Bath Temperature on the Electrodeposition of Snse Thin
    The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell.
    [Show full text]
  • Electronic Structure of Designed [(Snse)1+D ]M [Tise2]
    Invited Paper DOI: 10.1557/jmr.2019.128 Electronic structure of designed [(SnSe)1+d]m[TiSe2]2 heterostructure thin films with tunable layering sequence https://doi.org/10.1557/jmr.2019.128 . Fabian Göhler1 , Danielle M. Hamann2, Niels Rösch1, Susanne Wolff1, Jacob T. Logan2, Robert Fischer2, Florian Speck1, David C. Johnson2, Thomas Seyller1,a) 1Institute of Physics, Chemnitz University of Technology, D-09126 Chemnitz, Germany 2Department of Chemistry, University of Oregon, Eugene, Oregon 97401, USA a)Address all correspondence to this author. e-mail: [email protected] Received: 18 February 2019; accepted: 21 March 2019 fi m A series of [(SnSe)1+d]m[TiSe2]2 heterostructure thin lms built up from repeating units of bilayers of SnSe and two layers of TiSe2 were synthesized from designed precursors. The electronic structure of the films was https://www.cambridge.org/core/terms investigated using X-ray photoelectron spectroscopy for samples with m = 1, 2, 3, and 7 and compared to binary samples of TiSe2 and SnSe. The observed binding energies of core levels and valence bands of the heterostructures are largely independent of m. For the SnSe layers, we can observe a rigid band shift in the heterostructures compared to the binary, which can be explained by electron transfer from SnSe to TiSe2. The electronic structure of the TiSe2 layers shows a more complicated behavior, as a small shift can be observed in the valence band and Se3d spectra, but the Ti2p core level remains at a constant energy. Complementary UV photoemission spectroscopy measurements confirm a charge transfer mechanism where the SnSe layers donate electrons into empty Ti3d states at the Fermi energy.
    [Show full text]
  • Open Cyphersthesis FINAL.Pdf
    The Pennsylvania State University The Graduate School College of Engineering RESEARCH ON LOW FREQUENCY COMPOSITE TRANSDUCERS FABRICATED USING A SOL-GEL SPRAY-ON METHOD A Thesis in Engineering Science by Robert L. Cyphers c 2012 Robert L. Cyphers Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science December 2012 The thesis of Robert L. Cyphers was reviewed and approved∗ by the following: Bernhard R. Tittmann Schell Professor of Engineering Science and Mechanics Thesis Advisor Clifford Lissenden Professor of Engineering Science and Mechanics Mark W. Horn Professor of Engineering Science and Mechanics Judith A. Todd Professor of Engineering Science and Mechanics // P. B. Breneman Department Head Head of the Department of Engineering Science and Mechanics ∗Signatures are on file in the Graduate School. Abstract Ultrasonic nondestructive evaluation is currently used in countless applications to maintain a system's operational integrity. Piezoelectric transducers are the devices commonly used in this field to search for defects. A sol-gel fabrication method utilizing a spray-on deposition method has proven to produce ultrasonic transducers useful in harsh environments. This procedure produces thin film transducers, which adhere directly to a substrate making it favorable in use with irregular surface geometries. These transducers operate at relatively high frequencies due to their minute thickness. The objective of this research is to investigate the ability for low frequency operation into the low kilohertz range. Depositing thicker layers of piezoelectric composites, including bismuth titanate and lead zirconate titanate, led to adhesion problems between the metal substrates and ceramic material. Delamination of the piezoelectric elements was determined to be caused by a large mismatch in thermal expansion coefficients.
    [Show full text]
  • High Temperature Ultrasonic Transducers: a Review
    sensors Review High Temperature Ultrasonic Transducers: A Review Rymantas Kazys * and Vaida Vaskeliene Ultrasound Research Institute, Kaunas University of Technology, Barsausko st. 59, LT-51368 Kaunas, Lithuania; [email protected] * Correspondence: [email protected] Abstract: There are many fields such as online monitoring of manufacturing processes, non-destructive testing in nuclear plants, or corrosion rate monitoring techniques of steel pipes in which measure- ments must be performed at elevated temperatures. For that high temperature ultrasonic transducers are necessary. In the presented paper, a literature review on the main types of such transducers, piezoelectric materials, backings, and the bonding techniques of transducers elements suitable for high temperatures, is presented. In this review, the main focus is on ultrasonic transducers with piezoelectric elements suitable for operation at temperatures higher than of the most commercially available transducers, i.e., 150 ◦C. The main types of the ultrasonic transducers that are discussed are the transducers with thin protectors, which may serve as matching layers, transducers with high temperature delay lines, wedges, and waveguide type transducers. The piezoelectric materi- als suitable for high temperature applications such as aluminum nitride, lithium niobate, gallium orthophosphate, bismuth titanate, oxyborate crystals, lead metaniobate, and other piezoceramics are analyzed. Bonding techniques used for joining of the transducer elements such as joining with glue, soldering,
    [Show full text]
  • Redalyc.PHYSICAL-CHEMICAL PROPERTIES of BISMUTH AND
    Dyna ISSN: 0012-7353 [email protected] Universidad Nacional de Colombia Colombia BEDOYA HINCAPIÉ, CLAUDIA MILENA; PINZÓN CÁRDENAS, MANUEL JONATHAN; ALFONSO ORJUELA, JOSE EDGAR; RESTREPO PARRA, ELISABETH; OLAYA FLOREZ, JHON JAIRO PHYSICAL-CHEMICAL PROPERTIES OF BISMUTH AND BISMUTH OXIDES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS Dyna, vol. 79, núm. 176, diciembre, 2012, pp. 139-148 Universidad Nacional de Colombia Medellín, Colombia Available in: http://www.redalyc.org/articulo.oa?id=49624953018 How to cite Complete issue Scientific Information System More information about this article Network of Scientific Journals from Latin America, the Caribbean, Spain and Portugal Journal's homepage in redalyc.org Non-profit academic project, developed under the open access initiative PHYSICAL-CHEMICAL PROPERTIES OF BISMUTH AND BISMUTH OXIDES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS PROPIEDADES FÍSICO-QUÍMICAS DEL BISMUTO Y OXIDOS DE BISMUTO: SÍNTESIS, CARACTERIZACIÓN Y APLICACIONES CLAUDIA MILENA BEDOYA HINCAPIÉ Ing. Física, Universidad Nacional de Colombia – Sede Bogotá, [email protected] MANUEL JONATHAN PINZÓN CÁRDENAS Ing. Mecatrónico, Universidad Nacional de Colombia – Sede Bogotá, [email protected] JOSE EDGAR ALFONSO ORJUELA PhD. Física, Universidad Nacional de Colombia – Sede Bogotá, [email protected] ELISABETH RESTREPO PARRA PhD. Ingeniería, Universidad Nacional de Colombia - Sede Manizales, [email protected] JHON JAIRO OLAYA FLOREZ PhD. Materiales, Universidad Nacional de Colombia - Sede Bogotá, [email protected] Received for review March 10 th, 2012, accepted June 29th, 2012, final version July, 9 th, 2012 ABSTRACT: The physical-chemical properties of bismuth and its oxides have been studied over the last two decades. As a result of this research, the growth of these materials with different crystallographic structures, showing micro and nanometric dimensions has been achieved by using several techniques (cathodic pulverization, laser pulsed deposition and hydrothermal method, among others).
    [Show full text]
  • PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS
    PRAJNA - Journal of Pure and Applied Sciences ISSN 0975 2595 Volume 19 December 2011 CONTENTS BIOSCIENCES Altered energy transfer in Phycobilisomes of the Cyanobacterium, Spirulina Platensis under 1 - 3 the influence of Chromium (III) Ayya Raju, M. and Murthy, S. D. S. PRAJNA Volume 19, 2011 Biotransformation of 11β , 17 α -dihydroxy-4-pregnene-3, 20-dione-21-o-succinate to a 4 - 7 17-ketosteroid by Pseudomonas Putida MTCC 1259 in absence of 9α -hydroxylase inhibitors Rahul Patel and Kirti Pawar Influence of nicking in combination with various plant growth substances on seed 8 - 10 germination and seedling growth of Noni (Morinda Citrifolia L.) Karnam Jaya Chandra and Dasari Daniel Gnana Sagar Quantitative analysis of aquatic Macrophytes in certain wetlands of Kachchh District, 11 - 13 Journal of Pure and Applied Sciences Gujarat J.P. Shah, Y.B. Dabgar and B.K. Jain Screening of crude root extracts of some Indian plants for their antibacterial activity 14 - 18 Purvesh B. Bharvad, Ashish R. Nayak, Naynika K. Patel and J. S. S. Mohan ________ Short Communication Heterosis for biometric characters and seed yield in parents and hybrids of rice 19 - 20 (Oryza Sativa L.) M. Prakash and B. Sunil Kumar CHEMISTRY Adsorption behavior and thermodynamics investigation of Aniline-n- 21 - 24 (p-Methoxybenzylidene) as corrosion inhibitor for Al-Mg alloy in hydrochloric acid V.A. Panchal, A.S. Patel and N.K. Shah Grafting of Butyl Acrylate onto Sodium Salt of partially Carboxymethylated Guar Gum 25 - 31 using Ceric Ions J.H. Trivedi, T.A. Bhatt and H.C. Trivedi Simultaneous equation and absorbance ratio methods for estimation of Fluoxetine 32 - 36 Hydrochloride and Olanzapine in tablet dosage form Vijaykumar K.
    [Show full text]
  • Designing Isoelectronic Counterparts to Layered Group V Semiconductors
    Designing isoelectronic counterparts to layered group V semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Tom´anek∗ Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, USA In analogy to III-V compounds, which have significantly broadened the scope of group IV semi- conductors, we propose IV-VI compounds as isoelectronic counterparts to layered group V semi- conductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon mono-sulfide (SiS). We find the black-phosphorus-like α-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both α-SiS and β-SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. INTRODUCTION RESULTS AND DISCUSSION 2D semiconductors of group V elements, including Since all atoms in sp3 layered structures of group V el- phosphorene and arsenene, have been rapidly attract- ements are threefold coordinated, the different allotropes ing interest due to their significant fundamental band can all be topologically mapped onto the honeycomb lat- gap, large density of states near the Fermi level, and tice of graphene with 2 sites per unit cell.[11] An easy high and anisotropic carrier mobility[1{4]. Combina- way to generate IV-VI compounds that are isoelectronic tion of these properties places these systems very favor- to group V monolayers is to occupy one of these sites by ably in the group of contenders for 2D electronics ap- a group IV and the other by a group VI element.
    [Show full text]
  • PVD Material Listing
    P. O. Box 639 NL - 5550 AP Valkenswaard Tel: +31 (0)40 204 69 31 Fergutec Fax: +31 (0)40 201 39 81 E - mail: [email protected] PVD Material Listing Pure Metals Aluminum, Al Antimony, Sb Beryllium, Be Bismuth, Bi Boron, B Cadmium, Cd Calcium, Ca Carbon, C Cerium, Ce Chromium, Cr Cobalt, Co Copper, Cu Erbium, Er Gadolinium, Gd Gallium, Ga Germanium, Ge Gold, Au Hafnium, Hf Indium, In Iridium, Ir Iron, Fe Lanthanum, La Lead, Pb Magnesium, Mg Manganese, Mn Molybdenum, Mo Neodymium, Nd Nickel, Ni Niobium, Nb Osmium, Os Palladium, Pd Platinum, Pt Praseodymium, Pr Rhenium, Re Rhodium, Rh Ruthenium, Ru Samarium, Sm Selenium, Se Silicon, Si Silver, Ag Tantalum, Ta Fergutec b.v. P.O. Box 639, NL - 5550 AP Valkenswaard Heistraat 64, NL - 5554 ER Valkenswaard Bankaccount 45.80.36.714 ABN - AMRO Valkenswaard C.o.C. Eindhoven no. 17098554 VAT - ID NL8095.60.185.B01 The Standard Terms and Conditions, lodged at the Chamber of Commerce in Eindhoven, are applicable to all transactions. Tellurium, Te Terbium, Tb Tin, Sn Titanium, Ti Tungsten, W Vanadium, V Ytterbium, Yb Yttrium, Y Zinc, Zn Zirconium, Zr Precious Metals Gold Antimony, Au/Sb Gold Arsenic, Au/As Gold Boron, Au/B Gold Copper, Au/Cu Gold Germanium, Au/Ge Gold Nickel, Au/Ni Gold Nickel Indium, Au/Ni/In Gold Palladium, Au/Pd Gold Phosphorus, Au/P Gold Silicon, Au/Si Gold Silver Platinum, Au/Ag/Pt Gold Tantalum, Au/Ta Gold Tin, Au/Sn Gold Zinc, Au/Zn Palladium Lithium, Pd/Li Palladium Manganese, Pd/Mn Palladium Nickel, Pd/Ni Platinum Palladium, Pt/Pd Palladium Rhenium, Pd/Re Platinum Rhodium,
    [Show full text]
  • Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W
    Article Cite This: J. Phys. Chem. C 2019, 123, 25437−25447 pubs.acs.org/JPCC Maximizing Thermoelectric Figures of Merit by Uniaxially Straining Indium Selenide † † † ‡ † Leonard W. Sprague Jr., Cancan Huang, Jeong-Pil Song,*, , and Brenda M. Rubenstein † Department of Chemistry, Brown University, Providence, Rhode Island 02912, United States ‡ Department of Physics, University of Arizona, Tucson, Arizona 85721, United States *S Supporting Information ABSTRACT: A majority of the electricity currently generated is regrettably lost as heat. Engineering high-efficiency thermo- electric materials which can convert waste heat back into electricity is therefore vital for reducing our energy fingerprint. ZT, a dimensionless figure of merit, acts as a beacon of promising thermoelectric materials. However, engineering materials with large ZT values is practically challenging, since maximizing ZT requires optimizing many interdepend- ent material properties. Motivated by recent studies on bulk indium selenide that suggest it may have favorable thermo- electric properties, here we present the thermoelectric properties of monolayer indium selenide in the presence of uniaxial strain using first-principles calculations conjoined with semiclassical Boltzmann transport theory. Our calculations indicate that conduction band convergence occurs at a compressive strain of −6% along the zigzag direction and results in an enhancement of ZT for p-type indium selenide at room temperature. Further enhancements occur at −7% as the valence bands similarly converge, reaching a maximum ZT value of 0.46, which is one of the largest monolayer InSe figures of merit recorded to date at room temperature. The importance of strain is directly reflected by the enhanced transport coefficients observed at strains nearing those which give rise to the band degeneracies we observe.
    [Show full text]
  • ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´Nek*
    ARTICLE Designing Isoelectronic Counterparts to Layered Group V Semiconductors Zhen Zhu, Jie Guan, Dan Liu, and David Toma´nek* Physics and Astronomy Department, Michigan State University, East Lansing, Michigan 48824, United States ABSTRACT In analogy to IIIÀV compounds, which have significantly broadened the scope of group IV semiconductors, we propose a class of IVÀVI compounds as isoelectronic counterparts to layered group V semiconductors. Using ab initio density functional theory, we study yet unrealized structural phases of silicon monosulfide (SiS). We find the black-phosphorus-like R-SiS to be almost equally stable as the blue-phosphorus-like β-SiS. Both R-SiS and β- SiS monolayers display a significant, indirect band gap that depends sensitively on the in-layer strain. Unlike 2D semiconductors of group V elements with the corresponding nonplanar structure, different SiS allotropes show a strong polarization either within or normal to the layers. We find that SiS may form both lateral and vertical heterostructures with phosphorene at a very small energy penalty, offering an unprecedented tunability in structural and electronic properties of SiS-P compounds. KEYWORDS: silicon sulfide . isoelectronic . phosphorene . ab initio . electronic band structure wo-dimensional semiconductors of monosulfide (SiS). We use ab initio density Tgroup V elements, including phos- functional theory (DFT) to identify stable phorene and arsenene, have been allotropes and determine their equilibrium rapidly attracting interest due to their sig- geometry and electronic structure. We have nificant fundamental band gap, large den- identified two nearly equally stable allo- sity of states near the Fermi level, and high tropes, namely, the black-phosphorus-like and anisotropic carrier mobility.1À4 Combi- R-SiS and the blue-phosphorus-like β-SiS, nation of these properties places these and show their structure in Figure 1a and d.
    [Show full text]
  • Bacterial Selenoproteins: a Role in Pathogenesis and Targets for Antimicrobial Development
    University of Central Florida STARS Electronic Theses and Dissertations, 2004-2019 2009 Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development Sarah Rosario University of Central Florida Part of the Medical Sciences Commons Find similar works at: https://stars.library.ucf.edu/etd University of Central Florida Libraries http://library.ucf.edu This Doctoral Dissertation (Open Access) is brought to you for free and open access by STARS. It has been accepted for inclusion in Electronic Theses and Dissertations, 2004-2019 by an authorized administrator of STARS. For more information, please contact [email protected]. STARS Citation Rosario, Sarah, "Bacterial Selenoproteins: A Role In Pathogenesis And Targets For Antimicrobial Development" (2009). Electronic Theses and Dissertations, 2004-2019. 3822. https://stars.library.ucf.edu/etd/3822 BACTERIAL SELENOPROTEINS: A ROLE IN PATHOGENESIS AND TARGETS FOR ANTIMICROBIAL DEVELOPMENT. by SARAH E. ROSARIO B.S. Florida State University, 2000 M.P.H. University of South Florida, 2002 A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the Burnett School of Biomedical Sciences in the College of Medicine at the University of Central Florida Orlando, Florida Summer Term 2009 Major Professor: William T. Self © 2009 Sarah E. Rosario ii ABSTRACT Selenoproteins are unique proteins in which selenocysteine is inserted into the polypeptide chain by highly specialized translational machinery. They exist within all three kingdoms of life. The functions of these proteins in biology are still being defined. In particular, the importance of selenoproteins in pathogenic microorganisms has received little attention. We first established that a nosocomial pathogen, Clostridium difficile, utilizes a selenoenzyme dependent pathway for energy metabolism.
    [Show full text]
  • High Purity Inorganics
    High Purity Inorganics www.alfa.com INCLUDING: • Puratronic® High Purity Inorganics • Ultra Dry Anhydrous Materials • REacton® Rare Earth Products www.alfa.com Where Science Meets Service High Purity Inorganics from Alfa Aesar Known worldwide as a leading manufacturer of high purity inorganic compounds, Alfa Aesar produces thousands of distinct materials to exacting standards for research, development and production applications. Custom production and packaging services are part of our regular offering. Our brands are recognized for purity and quality and are backed up by technical and sales teams dedicated to providing the best service. This catalog contains only a selection of our wide range of high purity inorganic materials. Many more products from our full range of over 46,000 items are available in our main catalog or online at www.alfa.com. APPLICATION FOR INORGANICS High Purity Products for Crystal Growth Typically, materials are manufactured to 99.995+% purity levels (metals basis). All materials are manufactured to have suitably low chloride, nitrate, sulfate and water content. Products include: • Lutetium(III) oxide • Niobium(V) oxide • Potassium carbonate • Sodium fluoride • Thulium(III) oxide • Tungsten(VI) oxide About Us GLOBAL INVENTORY The majority of our high purity inorganic compounds and related products are available in research and development quantities from stock. We also supply most products from stock in semi-bulk or bulk quantities. Many are in regular production and are available in bulk for next day shipment. Our experience in manufacturing, sourcing and handling a wide range of products enables us to respond quickly and efficiently to your needs. CUSTOM SYNTHESIS We offer flexible custom manufacturing services with the assurance of quality and confidentiality.
    [Show full text]