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Effect of Bath Temperature on the Electrodeposition of Snse Thin

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Effect of Bath Temperature on the Electrodeposition of Snse Thin The 4th Annual Seminar of National Science Fellowship 2004 [AMT10] Aqueous electrodeposition and properties of tin selenide thin films Saravanan Nagalingam1, Zulkarnain Zainal1, Anuar Kassim1, Mohd. Zobir Hussein1, Wan Mahmood Mat Yunus2 1Department of Chemistry, 2Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia Introduction Motivated by the potential applications of composition of the electrolytic solution tin chalcogenides, investigations on these (Riveros et al., 2001). We report here the compounds are becoming particularly active electrodeposition of SnSe thin films under in the field of materials chemistry. Tin aqueous conditions in the presence of chalcogenides offer a range of optical band ethylendiaminetetraacetate (EDTA) as a gaps suitable for various optical and chelating agent. optoelectronic applications. These compounds are also used as sensor and laser materials, Materials and Methods thin films polarizers and thermoelectric A conventional three-electrode cell was cooling materials (Zweibel, 2000). employed in this study. Ag/AgCl was used as Considerable attention has been given by the reference electrode to which all potentials various researchers in studying the properties were quoted. The working and counter of tin selenide (SnSe). SnSe is a narrow band electrodes were made from indium tin oxide gap binary IV-VI semiconductor with an (ITO) glass substrate and platinum, orthorhombic crystal structure. Among the respectively. The ITO glass substrates were uses of tin selenide (SnSe) are as memory cleaned ultrasonically in ethanol and distilled switching devices, holographic recording water before the deposition process. The systems, and infrared electronic devices counter electrode was polished prior to the (Lindgren et al., 2002). SnSe has been studied insertion into the electrolyte cell. EG & G in the form of both single crystal and thin Princeton Applied Research potentiostat films (Subramanian et al., 1999; Yu et al., driven by a software model 270 1981; Agnithothri et al., 1979). SnSe could Electrochemical Analysis System was used to also be used in the fabrication of control the electrodeposition process and to photoelectrochemical cells. The use of SnSe monitor the current and voltage profiles. The for this purpose could suppress electrolytes were prepared using analytical photocorrosion and enhance the fill factor in grade reagents and deionised water. electrical switches and in junction devices Ethylendiaminetetraacetate (EDTA) was used (Terada et al., 1971). to chelate with Sn2+ to obtain Sn-EDTA The methods used to prepare SnSe thin complex solution. The presence of EDTA in films are chemical bath deposition (Suguna et aqueous solution was found to improve the al., 1996), vacuum evaporation, chemical lifetime of the deposition bath as well as the vapour deposition (Pramanik et al., 1988; adhesion of the deposited film on the substrate Bennouna et al., 1983; Dang Tran, 1985) and (Ghazali et al., 1998). The deposition process electrodeposition (Subramanian et al., 1999; was varied at various parameters such as Engelken et al., 1986). Among these methods, solution temperature and deposition time. electrodeposition is widely used because it is a Effects of annealing in nitrogen (N2) simple, economical and viable technique, atmosphere towards the crystallinity of the which produces films of good quality for material were also studied. device applications (Riveros et al., 2001; Prior to the deposition process, cyclic Pattabi et al., 2000). The attractive features of voltammetry (CV) test was run between -1.00 the method are the convenience for producing to 1.00 V on the cell containing the Sn-EDTA large area devices, low temperature growth, complex and disodium selenite (Na2SeO3) enable morphological, compositional and film solution to probe the prospective potentials for thickness control by readily adjusting the deposition. The experiment was performed at electrical parameters, as well as the room temperature (27 C) under N2 blanket 277 The 4th Annual Seminar of National Science Fellowship 2004 without stirring. The pH was maintained at 2.4 using HCl, which was added to prevent the formation of hydroxyl species and insoluble 0.6 compounds (Ghazali et al., 1998). The films were deposited at various 0.4 ) A deposition potentials. Immediately after m ( I deposition, the deposits were tested for its 0.2 durability by subjecting it to a steady stream of distilled water. The deposited films were kept for further comparison and analysis. X- 0 ray diffraction (XRD) analysis was carried out 0.20 -0.05 -0.30 -0.55 -0.80 -1.05 using a Siemens D-5000 Diffractometer for E (V) the 2 ranging from 2 - 60 with CuK FIGURE 1 Cyclic voltammogram of ITO glass radiation ( = 1.5418 Å). Scanning electron electrode in the deposition bath containing mixture microscopy (SEM) was performed on a JEOL of Sn-EDTA and Na2SeO3 JSM 6400 Scanning Microscope. Optical absorption study was carried out using the The formation of SnSe follows according Perkin Elmer UV/Vis Lambda 20 to reaction (1). Similar mechanisms have been Spectrophotometer. The film-coated indium proposed for the deposition of PbSe films doped tin oxide (ITO) glass was placed across (Saloniemi et al., 1998). the sample radiation pathway while the uncoated ITO glass was put across the Sn(EDTA)2- + Se + 2H+ + 2e- reference path. The raw data were 2- SnSe + H2EDTA (1) manipulated for the determination of the band gap energy, Eg. Photoelectrochemical (PEC) Based on the CV result, significant experiment was performed in deposition can be expected for potential above K3Fe(CN)6/K4Fe(CN)6 redox solution by –0.40 V. Thus, deposition was carried out at running linear sweep voltammetry (LSV). A potentials, -0.50, -0.60, -0.70, –0.80 and –0.90 tungsten-halogen lamp (100 W) was used for V. Higher potential above –0.90 V was not illuminating the electrode. attempted as this could lead to H2 evolution reaction. Only the film deposited at –0.80 V at Results and Discussion showed full surface coverage upon The cyclic voltammogram of ITO glass observation. However, the thickness of the electrode in the deposition bath containing film was very low indicating low amount of mixture of Sn-EDTA and Na2SeO3 is shown in material deposited due to slow deposition rate. Figure 1. The current rise starts at about –0.40 The following deposition process was carried V. This is due to the formation of SnSe out at 55 C. The film deposited at this compound on the surface of the electrode. The temperature covered the surface of the current increased as the potential was substrate completely with no pinhole effect. forwarded to more negative values. At higher The appearance of the films was dark greyish potential values the deposition process is in colour. Figure 2 shows the XRD plot of the followed by the hydrogen evolution process, film deposited at 55 C. The peak at 2 = 30.6 which is also reported to occur at higher negative potential values. However, no was most prominent corresponding to the significance peak separation is observed that (111) plane, which matched the orthorhombic separates both the process. This suggests that SnSe phase (JCDPS File No: 32-1382). The the deposition process is best not to be SEM micrograph of the film deposited at 55 proceeded at very negative values. During the C is shown in Figure 3. The micrograph of reverse scan the current followed lower the film shows formation of somewhat thicker potential route, which is typical for deposition deposit which covers completely the surface reaction. However no significance anodic of the substrate. Formation of granules, which peak is observed indicating that SnSe films was uniformly distributed over the deposit formed during the reduction process is quite layer, could be observed. The sizes of these stable in the solution. granules are quite similar and vary considerably from 2 m to 4 m. 278 The 4th Annual Seminar of National Science Fellowship 2004 Optical Absor bance 111 6 ) s t i n 5 u y r a t i b r A ( y t 4 i s n e t n I 3 411 402 2 1 20 30 40 50 60 0 2/degrees 300 400 500 600 700 800 900 1000 FIGURE 2 XRD plot of SnSe film deposited at 55 Wavelength (nm) C FIGURE 4 Optical absorbance vs. wavelength spectrum for SnSe film prepared at 55 ºC 6 5 4 2/n 3 (Ahv) 2 1 FIGURE 3 SEM micrograph of SnSe film prepared 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 at 55 C hv(eV) Optical absorbance, A, versus the FIGURE 5 Plot of (Ah)2/n vs. h when n = 4 for wavelength, , of the SnSe films prepared at SnSe film prepared at 55 C 55 C is shown in Figure 4. The film showed gradual absorption starting at 650 nm 111 downward. Band gap energy and transition 400 type was derived from mathematical treatment 410 411 75 min of the data obtained from the optical 111 absorbance vs. wavelength with the following 011 ) 410 s t relationship for near-edge absorption: i n 60 min u 2/n y r 111 a (Ah) = k(h - Eg) r t i b r A ( where is the frequency, h is the Planck’s 410 y 511 t i s 45 min n constant, k equals a constant while n carries e t n I 111 the value of either 1 or 4. The bandgap, Eg, 410 221 could be obtained from a straight line plot of 2/n 30 min (Ah) as a function of h. Extrapolation of 111 400 the line to the base line, where the value of 2/n 15 min (Ah) is zero, will give Eg. A linear trend is apparent where n in the relationship equals 4 20 40 60 (Figure 5).
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