Data in Science and Technology

Editor in Chief: R. Poerschke

Semiconductors Group IV Elements and III-V Compounds

Editor: O. Madelung

Springer-Verlag Berlin Heidelberg New York London Paris Tokyo Hong Kong Barcelona ISBN-13: 978-3-540-53150-0 e-ISBN-13: 978-3-642-45681-7 001: 10.1007/978-3-642-45681-7

Library of Congress Cataloging-in-Publication Data Semiconductors: group IV elements and II I-V compounds I editor, o. Madelung. p. cm. -- (Data in science and technology) Includes bibliographical references. ISBN 978-3-54().53150.o (Springer-Verlag Berlin Heidelberg New York : acid-free paper) I. Semiconductors--Handbooks, manuals, etc. I. Madelung, O. (Otfried) II. Series QC611.45.S46 1991 537.6'22--dc20 90-26078 CIP This work is subject to copyright All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, broadcasting, repro• duction on microfilms or other ways, and storage in data banks_ Duplication of this publication or parts thereofis only permitted under the provisions of the German Copyright LawofSeptember9, 1965,in its current version, and a copyright fee must always be paid. Violations fall under the prosecution act ofthe German Copyright Law_ © Springer-Verlag Berlin Heidelberg 1991

The use of registered names, trademarks, etc_ in this publication does not imply, even in the absence ofa specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Typesetting: Thomson Press, Ltd_, New Delhi, India 216313040-543210 - Printed on acid-free paper Preface

The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt• Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries.

Berlin/Marburg, February 1991 The Editors Table of contents

A Introduction 1 General remarks...... 1 2 Physical quantities tabulated in this volume ...... 2

B Physical data

1 Elements of the IVth group and IV- IV compounds 1.1 Diamond (C)...... 5 1.2 Silicon (Si) ...... 11 1.3 Germanium (Ge) ...... 28 1.4 Grey tin (a-Sn)...... 42 1.5 Silicon carbide (SiC) ...... 47 1.6 Silicon germanium alloys (Six Gel_x) ...... 5"1

2 I II-V compollnds 2.1 Boron nitride (BN) ...... 60 2.2 Boron phosphide (BP)...... 65 2.3 Boron arsenide (BAs) ...... 68 2.4 Aluminium nitride (AIN) ...... 69 2.5 Aluminium phosphide (AlP)...... 72 2.6 Aluminium arsenide (AlAs) ...... 75 2.7 Aluminium antimonide (AISb) ...... 80 2.8 Gallium nitride (GaN)...... 86 2.9 Gallium phosphide (GaP)...... 91 2.10 Gallium arsenide (GaAs) ...... 101 2.11 Gallium antimonide (GaSb) ...... 114 2.12 Indium nitride (InN)...... 122 2.13 Indium phosphide (InP)...... 124 2.14 Indium arsenide (InAs) ...... 133 2.15 Indium antimonide (InSb) ...... 141 2.16 Ternary and quaternary alloys between III-V compounds...... 150

Appendix: Contents of the volumes of the New Series ofLandolt-B6rnstein dealing with group IV and III-V semiconductors...... 160