CO2005: Electronics I The Bipolar Junction Transistor (BJT) 張大中 中央大學 通訊工程系
[email protected] 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 1 Bipolar Transistor Structures 19 17 N D 10 N P 10 15 N D 10 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 2 Forward-Active Mode in the NPN Transistor Because of the large concentration gradient in the base region, electrons injected from the emitter diffuse across the base into the BC space- charge region, where the E-field e sweeps them into the collector region. 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 3 Currents in Emitter, Collector, and Base Emitter Current: Exponential function of the BE voltage Collector Current: Ignoring the recombination in the base region (the base width is very tiny, micrometer), the collect current is proportional to the emitter injection current and is independent of the reverse-biased BC voltage. Hence, the collector current is controlled by the BE voltage. Base Current: BE forward-biased current iB1 N D,E N P,B Base recombination current iB2 iC iB1, iE iB iC iB1 iC 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 4 Common-Emitter Configuration i C Common-emitter current gain iB The power supply voltage Vcc iE iB iC (1)iB must be sufficiently large to keep BC junction reverse i i biased. C (1) E 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 5 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 6 Forward-Active Mode in the PNP Transistor 中央大學通訊系 張大中 Electronics I, Neamen 3th Ed. 7 Circuit Symbols and Conventions The arrowhead is always placed on the emitter terminal, and it indicates the direction of the emitter current.