D2-PMo-1 APPC12 The 12th Asia Pacific Physics Conference
Extreme Ultraviolet Source based on microwave discharge produced plasma using cavity resonator
S. Tashima, M. Ohnishi, H. Osawa, W. Hugrass a
Department of Electrical and Electronic Engineering, Faculty of Engineering Science, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan aSchool of Computing and Information Systems, University of Tasmania, Locked Bag 1359, Launceston, Tasmania 7250, Australia
Extreme ultra violet (EUV) lithography is a leading technology for the production of the next-generation chips with small features. The 13.5-nm EUV radiation can be obtained using either discharge-produced plasma (DPP) or laser-produced plasma (LPP) sources. Because the EUV radiation is strongly absorbed by all known materials, the entire EUV scanner system must be in a vacuum environment. The debris and the tin vapor generated in some EUV sources may cause contamination of the EUV mirrors and the silicon wafers. The microwave discharge produced plasma (MDPP) source invented at Kansai University does not produce debris because it is electrode-less and the working gas is Xe..
Figure 1 shows the photo of MDPP. The microwave frequency is 2.45 GHz, the
maximum power (Prf ) is 6 kW and the cavity mode is TM110. The Xe gas is fed in a glass tube with inner diameter 3 mm.
The EUV radiation is measured using a calorie meter and EUV spectroscopy. The preliminary experiments show that the Figure 1 The system of microwave discharge produced plasma system MDPP produces pulsed EUV radiation of
10 W/4π str. for Prf = 300 W at a repetition frequency of 100 Hz.
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