Gallium Arsenide
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Comparison of Trimethylgallium and Triethylgallium As “Ga” Source
Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma- assisted atomic layer deposition Mustafa AlevliAli Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli Citation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A137 (2016); doi: 10.1116/1.4937725 View online: http://dx.doi.org/10.1116/1.4937725 View Table of Contents: http://avs.scitation.org/toc/jva/34/1 Published by the American Vacuum Society Articles you may be interested in Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A12501A125 (2015); 10.1116/1.4936230 Atomic layer deposition of GaN at low temperatures Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, 01A12401A124 (2011); 10.1116/1.3664102 Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, 045203045203 (2016); 10.1063/1.4946786 Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, (1998); 10.1116/1.577146 Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, -
Crystal Structure of Hexabarium Mononitride Pentaindide,(Ba6n)[In5]
Z. Kristallogr. NCS 219 (2004) 349-350 349 © by Oldenbourg Wissenschaftsverlag, München Crystal structure of hexabarium mononitride pentaindide, (Ba6N)[In5] A. Schlechte, Yu. Prots and R. Niewa* Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Str. 40, 01187 Dresden, Germany Received October 1, 2004, accepted and available on-line November 12, 2004; CSD no. 409805 Discussion Indium, when combined with alkaline-earth elements forms a va- riety of ternary nitrides. The compounds known so far may be de- scribed as built from indium clusters and octahedra of alkaline- earth cations surrounding nitride ions. In the latter cationic sub- structure the polyhedra might be isolated, vertex-, and/or edge- sharing. The variety of In arrangements extends from isolated In species in (Ca7N4)Ini.o4 [1], isolated tetrahedral units in (AI9N7)[ID4]2 (A = Ca, Sr, Ba) [2,3], trigonal bipyramidal [Ins] clusters next to [Ins] ions of more complicated geometry in (Ba38Ni8)[In5]2[In8] [4], and infinite chains in (A4N)[In2] (A = Ca, Sr) [5] and (Ca2N)In [6]. None of these metallic compounds follows Zintl-like counting. The new compound (Ba6N)[Ins] is an isotype of (¿6N)[Ga5] (A = Sr, Ba) [7]. The crystal structure of (Ba6N)tIns] is characterized as rocksalt type motif of N-centred octahedra (BaiN) and trigonal bi- pyramidal clusters [Ins]. The trigonal bipyramidal units [Ins] might be described as [Ins]7- ions, quite the same according to Zintl-type electronic counting and using the Wade-rules for closo-cluster. The isotypes (AeN)[Gas] were previously de- scribed by the formula (A2+)6(N3-)[Ga5]7~ • 2e_ based on elec- tronic structure calculations. -
Structural and Electronic Properties of Indium Rich Nitride Nanostructures
francesco ivaldi STRUCTURALANDELECTRONICPROPERTIESOF INDIUMRICHNITRIDENANOSTRUCTURES STRUCTURALANDELECTRONICPROPERTIESOFINDIUM RICHNITRIDENANOSTRUCTURES francesco ivaldi Institute of Physics Polish Academy of Science Laboratory of X-Ray and electron microscopy research Group of electron microscopy Promotor: Prof. nzw. dr hab. Piotr Dłuzewski˙ Warsaw, September 2015 Francesco Ivaldi: Structural and electronic properties of indium rich ni- tride nanostructures, III-V heterostructures investigated by TEM and connected methods, c September 2015 ABSTRACT New materials such as III-N ternary alloys are object of increasing interest in the field of micro- and nanotechnology due to their rel- evant optical and electronical properties. Those alloys are especially appealing to be used to form quantum nanostructures for various de- vice applications such as laser emitting diodes, high electron mobility transistors and solar cells. This thesis investigates the properties of InGaN and AlInN alloys with high indium content (> 25 %). TEM and STEM combined with EELS and EDX investigations have been used to correlate the struc- tural changes with the local electronic and optical properties of In- GaN quantum wells and InN quantum dots as a consequence of ther- mal processes. Annealing of InGaN quantum wells and capping of both InN quan- tum dots and quantum wells under different conditions have been investigated. Image processing techniques such as geometric phase analysis of HR-TEM images were used to reveal significant fluctua- tions in the indium distribution on a nanometric scale inside the wells. The growth parameters leading to improved photoemission proper- ties have been determined. MBE and MOCVD grown samples have been used to analyze the influence of the temperature of the quantum barrier growth on the structural and electronic properties of the samples. -
Indium Nitride Growth by Metal-Organic Vapor Phase Epitaxy
INDIUM NITRIDE GROWTH BY METAL-ORGANIC VAPOR PHASE EPITAXY By TAEWOONG KIM A DISSERTATION PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY UNIVERSITY OF FLORIDA 2006 Copyright 2006 by Taewoong Kim ACKNOWLEDGMENTS The author wishes first to thank his advisor, Dr. Timothy J. Anderson, for providing five years of valuable advice and guidance. Dr. Anderson always encouraged the author to approach his research from the highest scientific level. He is deeply thankful to his co-advisor, Dr. Olga Kryliouk, for her valuable guidance, sincere advice, and consistent support for the past five years. Secondly, the author wishes to thank the remaining committee members of Dr. Steve Pearton and Dr. Fan Ren for their advice and guidance The author is grateful to Scott Gapinski, the staff at Microfabritech, and Eric Lambers, the staff at the Major Analytical Instrumentation Center, especially for Auger characterization. Acknowledgement needs to be given to Sangwon Kang who worked with the author for the past year and provided valuable assistance. Thanks go to Youngsun Won for his useful discussion of quantum calculation and SEM characterization, and to Dr. Jianyun Shen for her assistance about how to use the ThermoCalc. The author wishes to thank Hyunjong Park for useful discussion and Youngseok Kim for his kindness and friendship. Most importantly, the author is grateful to Moonhee Choi, his beloved wife, for her endless support, trust, love, sacrifice and encouragement. Without her help, he would have not finished the Ph.D. course. iii The author is grateful to his mother, father, mother-in-law, father-in-law, sisters, and brother for providing love, support and guidance throughout his life. -
Gallium in 2017 (PDF)
2017 Minerals Yearbook GALLIUM [ADVANCE RELEASE] U.S. Department of the Interior April 2020 U.S. Geological Survey Gallium By Brian W. Jaskula Domestic survey data and tables were prepared by Wanda G. Wooten, statistical assistant. Low-grade primary gallium was recovered globally as a gallium production was 5% from 2007 through 2017. World byproduct of processing bauxite and zinc ores. No domestic high-grade secondary refined gallium production increased at a low-grade primary gallium was recovered in 2017. Imports CAGR of 7%. World gallium consumption, which increased at of gallium metal and gallium arsenide (GaAs) wafers plus a CAGR of 6% from 2007 through 2017, was estimated to have domestically refined and recycled gallium continued to account been 355 t in 2017. for all U.S. gallium consumption (metal and gallium in GaAs). Metal imports were 93% higher than those in 2016 (table 1). Production The leading sources of imported gallium metal were, in No domestic production of low-grade primary gallium was descending order, China (including Hong Kong), the United reported in 2017. Neo Performance Materials Inc. (Canada) Kingdom, France, Ukraine, Russia, and the Republic of Korea recovered gallium from new scrap materials, predominantly (table 4). A significant portion of imports was thought to be those generated during the production of GaAs ingots and low-grade gallium that was refined in the United States and wafers. Neo’s facility in Blanding, UT, had the capability to shipped to other countries. Data on refined gallium exports, produce about 50 metric tons per year of high-grade gallium. however, were not available. -
Nonaqueous Syntheses of Metal Oxide and Metal Nitride Nanoparticles
Max-Planck Institut für Kolloid and Grenzflächenforschung Nonaqueous Syntheses of Metal Oxide and Metal Nitride Nanoparticles Dissertation zur Erlangung des akademischen Grades “doctor rerum naturalium” (Dr. rer. nat.) in der Wissenschaftsdisziplin “Kolloidchemie” eingereicht an der Mathematisch-Naturwissenschaftlichen Fakultät Universität Potsdam von Jelena Buha Potsdam, im Januar 2008 Dieses Werk ist unter einem Creative Commons Lizenzvertrag lizenziert: Namensnennung - Keine kommerzielle Nutzung - Weitergabe unter gleichen Bedingungen 2.0 Deutschland Um die Lizenz anzusehen, gehen Sie bitte zu: http://creativecommons.org/licenses/by-nc-sa/2.0/de/ Elektronisch veröffentlicht auf dem Publikationsserver der Universität Potsdam: http://opus.kobv.de/ubp/volltexte/2008/1836/ urn:nbn:de:kobv:517-opus-18368 [http://nbn-resolving.de/urn:nbn:de:kobv:517-opus-18368] С’ вером у Богa Abstract Nanostructured materials are materials consisting of nanoparticulate building blocks on the scale of nanometers (i.e. 10-9 m). Composition, crystallinity and morphology can enhance or even induce new properties of the materials, which are desirable for todays and future technological applications. In this work, we have shown new strategies to synthesise metal oxide and metal nitride nanomaterials. The first part of the work deals with the study of nonaqueous synthesis of metal oxide nanoparticles. We succeeded in the synthesis of In2O3 nanopartcles where we could clearly influence the morphology by varying the type of the precursors and the solvents; of ZnO mesocrystals by using acetonitrile as a solvent; of transition metal oxides (Nb2O5, Ta2O5 and HfO2) that are particularly hard to obtain on the nanoscale and other technologically important materials. Solvothermal synthesis however is not restricted to formation of oxide materials only. -
Supporting Information Synthesis and Morphology Evolution of Indium Nitride
Electronic Supplementary Material (ESI) for CrystEngComm. This journal is © The Royal Society of Chemistry 2019 Supporting Information Synthesis and morphology evolution of Indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition Wenqing Song, Jiawei Si, Shaoteng Wu, Zelin Hu, Lingyun Long, Tao Li, Xiang Gao, Lei Zhang, Wenhui Zhu, Liancheng Wang* State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha Hunan, 410083, China Corresponding author: Liancheng Wang: [email protected]. Contents Fig.S1, SEM images were taken from the edge of samples, Fig.S2, Cross section diagram of synthetic samples in the tube furnace Fig.S3 the growth process changes from a kinetically limited process to diffusion control mode Fig.S4 the diffusion capacity of InN molecules on the InN jagged strip Fig.S5 the diffusion rate increased with morphology variation at different temperature Fig.S6 the product of InN narrow triangular sheets grown at 710℃ and heated them to 720 and 735℃ Fig.S7 a EDS spectrum of InN nanostructure, Fig.S7 b catalyst particles or metal droplets on the top of InN NWs, Fig.S7 c fusion of nanowire to leaf membrane from surface diffusion, Fig.S7 d angle formation of two or more jagged strips connect each other In Fig.S1, SEM images are taken from the center of samples, the morphology of samples is the same for samples at the edge or center. The difference lies in the density and the length of samples. The density and the length of some InN nanostructures samples in the edge are lower and longer. -
Adduct Purification of Trimethylgallium Using 4-Dimethylaminopyridine
International Journal of Advanced Science and Technology Vol. 41, April, 2012 Adduct Purification of Trimethylgallium using 4-Dimethylaminopyridine Selvakumar Dhanasingh1*, Rajendra Singh2 and Mohammed Nasim3 1Defence BioEngineering and Electromedical laboratory, C. V. Raman Nagar, Bangalore – 560 093, India 2Directorate of ER & IPR, DRDO Bhawan, Rajaji Marg, New Delhi – 110105, India 3Defence Materials & Stores Research and Development Establishment, DMSRDE P.O., G.T. Road, Kanpur – 208 013, India [email protected] Abstract 1:1 and 2:1 adducts of trimethylgallium (TMGa) with 4-dimethylaminopyridine (DMAP) were synthesized and characterized by 1H, 13C NMR, FAB-MS and Trace elemental analyses using ICP-MS. Both adducts are non-pyrophoric, thermally dissociable and easy to handle. FAB-MS study suggests that the adducts are associated in tetrameric forms. TMGa of purity more than 99.999% (5N) was released from these adducts, which shows the adducts are potential candidates to produce high pure metal alkyl sources for Metal-Organic Chemical Vapor Deposition (MOCVD). Keywords: Trimethylgallium, pyrophoric, MOCVD precursor, adduct purification technique 1. Introduction The electronic properties of II-VI and III-V compound semiconducting thin films deposited by MOCVD method are mainly determined by the purity of the precursors [1, 2]. As most of the metal alkyls for MOCVD are volatile and highly reactive pyrophoric liquids, the physical purification methods such as, fractional distillation and low temperature crystallization are difficult to employ and often large amount of metal alkyls need to be discarded to obtain them with high purity. However, these metal alkyls can be purified by ‘adduct purification technique’, which involves the formation of adducts between the metal alkyl with an appropriate Lewis base, which are easy to handle and can be purified by re- crystallization [3, 4, 5]. -
Getting Ready for Indium Gallium Arsenide High-Mobility Channels
88 Conference report: VLSI Symposium Getting ready for indium gallium arsenide high-mobility channels Mike Cooke reports on the VLSI Symposium, highlighting the development of compound semiconductor channels in field-effect transistors on silicon for CMOS. esearchers across the world are readying the layer overgrowth or aspect-ratio trapping (ART) — are implementation of indium gallium arsenide free in the vertical direction, and thickness and surface R(InGaAs) and other III-V compound semicon- smoothness are determined post-growth by lithography ductors as high-mobility channel materials in field- or chemical mechanical polishing (CMP). The CELO effect transistors (FETs) on silicon (Si) for mainstream process filters out defects by the abrupt change in complementary metal-oxide-semiconductor (CMOS) growth direction from vertical to lateral, as constrained electronics applications. The latest Symposia on VLSI by the cavity. The researchers believe their technique Technology and Circuits in Kyoto, Japan in June featured avoids the main problems of alternative methods of a number of presentations from leading companies and integrating InGaAs into CMOS in terms of limited wafer university research groups directed towards this end. size, high cost, roughness, or background doping. In addition, Intel is proposing gallium nitride (GaN) The cap of the cavity was removed to access the for mobile applications such as voltage regulators or InGaAs for device fabrication. Also the InGaAs material radio-frequency power amplifiers, which require low was removed from the seed region to electrically power consumption and low-voltage operation. Away isolate the resulting devices from the underlying from III-V semiconductors, much interest has been silicon substrate. -
LED) Materials and Challenges- a Brief Review
6 IV April 2018 http://doi.org/10.22214/ijraset.2018.4723 International Journal for Research in Applied Science & Engineering Technology (IJRASET) ISSN: 2321-9653; IC Value: 45.98; SJ Impact Factor: 6.887 Volume 6 Issue IV, April 2018- Available at www.ijraset.com Different Types of in Light Emitting Diodes (LED) Materials and Challenges- A Brief Review BY Susan John1 1Dept Of Physics S. F. S College Nagpur 06, Maharashtra State. India I. INTRODUCTION LEDs are semiconductor devices, which produce light when current flows through them. It is a two-lead semiconductor light source. It is a p–n junction diode that emits light when activated. When a suitable current is applied electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light is determined by the energy band gap of the semiconductor. LEDs are typically very small. In order to improve the efficiency many researches in LEDs and its phosphor has been taking place. However still many technical challenges such as conversion losses, color control, current efficiency droop, color shift, system reliability as well as in light distribution, dimming, thermal management and driver power supply performances etc need to be met in order to achieve low cost and high efficiency. [1] Keywords: Glare, blue hazard and semiconductor. I. DIFFERENT TYPES OF LEDS MATERIALS USED: A. Gallium Arsenide (GaAs) emits infra-red light B. Gallium Arsenide Phosphide (GaAsP) emits red to infra-red, orange light C. Gallium Phosphide (GaP) emits red, yellow and green light D. -
A Computational Study on Indium Nitride ALD Precursors and Surface Chemical Mechanisms
Linköping University | Department of Physics, Chemistry and Biology Master thesis, 60 hp | Chemistry Spring term 2018 | LITH-IFM-A-EX--18/3437--SE A computational study on indium nitride ALD precursors and surface chemical mechanisms Karl Rönnby Examiner, Lars Ojamäe Supervisor, Henrik Pedersen Avdelning, institution Datum Division, Department Date Department of Physics, Chemistry and Biology 2018-01-22 Linköping University Språk Rapporttyp ISBN Language Report category ISRN: Svenska/Swedish Licentiatavhandling Engelska/English Examensarbete LITH-IFM-A-EX--18/3437--SE Annat/Other: C-uppsats D-uppsats Serietitel och serienummer: ISSN Övrig rapport Title of series, numbering: ________________ ________________ URL för elektronisk version: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva- 144426 Titel Title A computational study on indium nitride ALD precursors and surface chemical mechanisms Författare Author Karl Rönnby Sammanfattning Abstract Indium nitride has many applications as a semiconductor. High quality films of indium nitride can be grown using Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD), but the availability of precursors and knowledge of the underlaying chemical reactions is limited. In this study the gas phase decomposition of a new indium precursor, N,N-dimethyl- N',N''-diisopropylguanidinate, has been investigated by quantum chemical methods for use in both CVD and ALD of indium nitride. The computations showed significant decomposition at around 250°C, 3 mbar indicating that the precursor is unstable at ALD conditions. A computational study of the surface chemical mechanism of the adsorption of trimethylindium and ammonia on indium nitride was also performed as a method development for other precursor surface mechanism studies. -
The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition
The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition DISSERTATION Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the Graduate School of The Ohio State University By Nicholas G. Minutillo Graduate Program in Physics The Ohio State University 2014 Dissertation Committee: Professor Fengyuan Yang, Advisor Professor Jay A. Gupta Professor Klaus Honscheid Professor Mohit Randeria Copyright by Nicholas Gaetano Minutillo 2014 Abstract Semiconductor nanowires hold a wealth of promise for studying the fundamental physics of electron behavior and interactions in a quasi-one dimensional environment as well as components in or the foundation of technological advancement in electronic and spintronic devices. Especially in the case of spintronic applications, the crystalline environment must be highly controlled. Unlike in electronic devices, predicated on the transport or storage of charges, spintronic devices often depend on relative phases of spin states. These phases are easily lost in an environment where scattering probabilities are high. In any material system, control of the material fabrication is the limiting factor to achieving the theoretical characteristics and operation. Still an active area of research, bottom-up synthesis of semiconductor nanowires has yet to reach the level of control required for wide spread adoption as a base system in condensed matter research. At this point in time, the material synthesis to meet the criteria for advanced applications remains a bottle neck in advancing the application of GaAs or any other semiconductor nanowires. In this dissertation we discuss the vapor-liquid-solid (VLS) mechanism and its role in the growth of gallium arsenide and other III-V semiconductors.