2017 Minerals Yearbook GALLIUM [ADVANCE RELEASE] U.S. Department of the Interior April 2020 U.S. Geological Survey Gallium By Brian W. Jaskula Domestic survey data and tables were prepared by Wanda G. Wooten, statistical assistant. Low-grade primary gallium was recovered globally as a gallium production was 5% from 2007 through 2017. World byproduct of processing bauxite and zinc ores. No domestic high-grade secondary refined gallium production increased at a low-grade primary gallium was recovered in 2017. Imports CAGR of 7%. World gallium consumption, which increased at of gallium metal and gallium arsenide (GaAs) wafers plus a CAGR of 6% from 2007 through 2017, was estimated to have domestically refined and recycled gallium continued to account been 355 t in 2017. for all U.S. gallium consumption (metal and gallium in GaAs). Metal imports were 93% higher than those in 2016 (table 1). Production The leading sources of imported gallium metal were, in No domestic production of low-grade primary gallium was descending order, China (including Hong Kong), the United reported in 2017. Neo Performance Materials Inc. (Canada) Kingdom, France, Ukraine, Russia, and the Republic of Korea recovered gallium from new scrap materials, predominantly (table 4). A significant portion of imports was thought to be those generated during the production of GaAs ingots and low-grade gallium that was refined in the United States and wafers. Neo’s facility in Blanding, UT, had the capability to shipped to other countries. Data on refined gallium exports, produce about 50 metric tons per year of high-grade gallium. however, were not available. Doped GaAs wafer (a wafer with The company purchased new scrap and low-grade primary intentionally modified electrical properties) imports decreased gallium to refine into high-grade gallium. It also refined its by 36% from those of 2016. China was the leading source, customers’ scrap into high-grade gallium. Neo’s other gallium followed by Taiwan, Japan, Germany, France, and the Republic investments included an 80% interest in a gallium trichloride of Korea in descending order of quantity (table 5). The U.S. production facility in Quapaw, OK; a gallium recycling facility Census Bureau ceased reporting undoped GaAs wafer imports in Peterborough, Ontario, Canada; and an 80% interest in in 2017. Almost all gallium consumed in the United States was a gallium trichloride production facility in the Hyeongok for the production of GaAs and gallium nitride (GaN), which, Industrial Zone in the Republic of Korea. Gallium trichloride is along with imported wafers, were used in integrated circuits a precursor for many gallium compounds, including the organic (ICs) and optoelectronic devices [laser diodes, light-emitting gallium compounds used in epitaxial layering (Neo Performance diodes (LEDs), photodetectors, and solar cells]. U.S. gallium Materials Inc., 2018, p. 5, 7, 19, 20). consumption decreased slightly from that in 2016 owing to a decline in gallium consumed for the production of analog and Consumption digital ICs, laser diodes and LEDs, and photodetectors and solar cells (table 2), as well as a decrease in doped GaAs wafer U.S. Consumption imports. Although gallium metal imports increased by 93% in 2017, most likely owing to consumer restocking, refined Gallium consumption data were collected by the U.S. gallium metal consumption decreased by 8% (table 3). About Geological Survey (USGS) from a voluntary survey 97% of the gallium metal consumed was at a purity level of of U.S. operations. In 2017, 65% of those canvassed 99.99999% to 99.999999%. responded to the gallium consumption survey. Data in In 2017, estimated world low-grade primary gallium tables 2 and 3 incorporated estimates for the nonrespondents production was 317 metric tons (t), an increase of approximately to reflect full-industry coverage. Many of these estimates were 20% from estimated production of 265 t in 2016 (table 6). based on company reports submitted to the U.S. Securities and China, which accounted for 83% of global low-grade primary Exchange Commission. gallium capacity (fig. 1, table 7), was the leading producer. GaAs was used to manufacture ICs and optoelectronic Japan, the Republic of Korea, Russia, and Ukraine accounted devices. GaN principally was used to manufacture LEDs for the remaining production. Germany ceased primary and laser diodes. ICs accounted for 68% of domestic gallium gallium production in 2016 owing to a prolonged period consumption, optoelectronic devices accounted for 30%, of low prices. The estimated worldwide compound annual and research and development accounted for the remainder growth rate (CAGR) of low-grade primary gallium production (table 2). Approximately 75% of the gallium consumed in the was 13% from 2007 through 2017 (fig. 2), primarily owing United States was contained in GaAs and GaN wafers. Gallium to China’s large annual increases in production beginning in metal, trimethylgallium (TMG), and triethylgallium (TEG) 2010. About 192 t of low-grade primary gallium was processed used in the epitaxial layering process to fabricate epiwafers to high-grade refined gallium; the remaining low-grade for the production of LEDs and ICs accounted for most primary gallium produced in 2017 was most likely stockpiled. of the remainder. High-grade primary refined gallium was produced in China, In 2017, U.S. gallium consumption was 17.9 t, a slight Japan, the United Kingdom, the United States, and possibly decrease from 18.1 t in 2016 owing to a slight decline in gallium Slovakia. The worldwide CAGR of high-grade primary refined consumed for the production of analog and digital ICs, laser GALLIUM—2017 [ADVANCE RELEASE] 27.1 diodes and LEDs, and photodetectors and solar cells, as well or silicon carbide wafers, or to a lesser extent, on GaN as a 36% decrease in doped GaAs wafer imports (tables 2, 5). wafers, were mostly produced and consumed in the Asia Refined gallium metal consumption decreased by 8% from that and the Pacific region. China, Japan, and the Republic of of 2016 (table 3). About 97% of the gallium metal consumed Korea accounted for more than 80% of world production. was at a purity level of 99.99999% to 99.999999%. U.S. gallium It was reported that the costs of the gallium material and consumers opening new GaAs wafer production facilities fabrication were lower in China than elsewhere, and the in Asia to be closer to the Asian-dominated optoelectronics country has attracted an increasing number of GaN substrate industry were thought to be a leading cause for the decrease in manufacturers (Semiconductor Today, 2015; Transparency U.S. gallium consumption and gallium wafer imports. Market Research, 2016). GaN RF device sales increased by an estimated 12% to Global Consumption approximately $380 million owing to an increase in wireless infrastructure applications. Telecommunications, which Gallium Arsenide.—Wireless applications continued to accounted for 40% of sales, and defense use, which accounted drive the radio frequency (RF) GaAs device market in 2017. for 38% of sales, were the two dominant applications for GaN The value of RF GaAs devices consumed worldwide increased RF devices. Cable TV, civil radar and avionics, and satellite by 7% to approximately $8.8 billion from $8.2 billion in 2016 communications were also significant applications (Yole (Strategy Analytics Inc., 2018). Développement, 2018). Worldwide shipments of smartphones from device vendors In 2017, GaN power device sales were approximately in 2017 totaled more than 1.49 billion units, a slight increase $22 million, a 57% increase from $14 million in 2016 (Yole from 1.47 billion units shipped in 2016. China, Europe, North Développement, 2017b). GaN power devices operate at higher America, and India were the principal regions and (or) countries voltages, power densities, and switching frequencies, and offer of smartphone growth in 2017, with China accounting for 30% greater power efficiency than existing GaAs and silicon devices. of smartphone sales, Europe accounting for 14% of sales, North Increased demand from the military for enhanced battlefield America accounting for 12% of sales, and India accounting performance stimulated demand for GaN power devices. for 9% of sales. India, which has become one of the fastest The main application of GaN in the military was in discrete growing smartphone markets in the world, was projected to high electron mobility transistors (HEMT), which allow for overtake North America in sales by 2020 and account for high-frequency operations used in radar and electronic warfare 13% of the smartphone market (Scarsella and Stofega, 2017; systems (Transparency Market Research, 2015). Statista Inc., undated). Light-Emitting Diodes.—Gallium is a main component The value of GaAs wafers consumed worldwide increased of many LEDs. Various gallium compounds, including GaAs, by an estimated 13% in 2017, to $790 million from GaN, gallium phosphide, aluminum gallium indium phosphide, $700 million in 2016. Countries within the Asia and the Pacific and gallium arsenide phosphide, produce variously colored region dominated the GaAs wafer market, with cellular, light when exposed to an electric current. Worldwide LED optoelectronics, and regional wireless manufacturers consuming consumption continued to increase in 2017. According to an estimated 61% of the GaAs wafers. The three largest GaAs research and consulting firm Strategies Unlimited, shipments wafer manufacturers in the world—WIN Semiconductors of LED lamps were on track to increase by approximately 25% Corp. (Taiwan), Advanced Wireless Semiconductor Company from those of 2016, and the packaged LED market sales revenue (Taiwan), and Global Communication Semiconductors, LLC was expected to be valued near $16 billion (U.S. Department (Torrance, CA), in order of market share—have wafer foundries of Energy, 2017, p. 12, 14). LED prices in 2017, however, in Taiwan. Wireless and cellular manufacturers within North decreased by about 10% from those of 2016, which were America consumed an estimated 26% of GaAs wafers.