High Purity Metalorganics (HPMO) High Purity Metalorganics

Total Page:16

File Type:pdf, Size:1020Kb

High Purity Metalorganics (HPMO) High Purity Metalorganics High purity metalorganics (HPMO) High purity metalorganics We are Nouryon, your MO-sources We also operate a world-scale Nouryon high purity metalorganics trimethyl aluminum (TMAl) plant, partner in essential division was created in 2000 in order making us the only high purity chemistry for a to better serve the semiconductor metalorganics producer fully sustainable future industry. back-integrated into this important raw material. We use leading edge This allows us to focus on the specific transfilling techniques that ensure the We are a global specialty chemicals needs of this market while leveraging repeatable and consistent delivery of leader. Industries worldwide rely our global distribution and service the highest purity metalorganics in on our essential chemistry in the networks, manufacturing scale and every cylinder that we supply. manufacture of everyday products expertise, global R&D, and expertise such as paper, plastics, building in safe handling of metalorganics. Our La Porte site is an OSHA VPP materials, food, pharmaceuticals, As such, we excel in safety, quality, Star site, and is ISO 9001 and and personal care items. Building consistency and innovation. 14001 certified, recognizing strict on our nearly 400-year history, the compliance with environmental dedication of our 10,000 employees, We focus on the production of regulations and adherence to state- and our shared commitment to high purity MOsources based on of-the-art quality systems. business growth, strong financial indium, gallium, aluminum, zinc performance, safety, sustainability, and magnesium. These products Our products are distributed globally and innovation, we have established have >99.999% purity and are sold using regional transfilling and/or a world-class business and built in electropolished stainless steel warehousing distribution centers, strong partnerships with our bubblers to the semiconductor ensuring close proximity to our customers. We operate in over 80 industry. We have grown over the customers. countries around the world and we past decade to become one of the supply customers around the world leading suppliers of these chemicals. Innovation with ingredients for the manufacture Our products are used in a huge We are committed to support the of life’s essentials. Specialty range of industrial and consumer continued steep growth of the chemicals are used in, among others, products. These include LED lighting, industries we serve by supplying the paints, detergents, foods, plastics, solar cells, lasers and many other growing volumes of MO-sources cosmetics, construction, pulp and electronic devices. required, building on the advantages paper, pharmaceuticals, electronics, of integration in our overall large- agriculture and for plastics. World-scale production and scale metalorganics production backward integration environment. A long history Our La Porte, Texas manufacturing We have a long history in metal alkyls, site was the first to produce trimethyl Our bench mark bubbler designs starting with large scale production gallium in 1971, and has since then provide enhanced and stable of aluminum alkyls in 1959. Today been expanded significantly to delivery of our products. Meeting we are one of the leading global produce a wide range of MO-sources the growing volume demands we producers of these products with a in dedicated production equipment. offer various larger bubbler types, broad range of metal organics based Owing to our vast knowledge of including support to central delivery on aluminum, zinc, magnesium, the safe and efficient production systems building on our experience gallium, indium and boron, which of metalorganics for the polymer in the supply of bulk high purity are supplied to the polymer, industry, we produce our high purity metalorganics to the solar cell pharmaceutical and semiconductor MO-sources at relatively large scale, industry. industry. ensuring high purity and excellent product consistency. Our Products Our range of products to the compound semiconductor and Si-semiconductor industry includes ultra-high purity gallium-, indium-, aluminum-, magnesium- and zinc-based MO-sources. Element Chemical name Acronym Aluminum Trimethylaluminum TMAl Low Ox – Trimethylaluminum TMAl LO Triethylaluminum TEAl Gallium Trimethylgallium TMGa Triethylgallium TEGa Indium Trimethylindium TMIn Magnesium Bis(cyclopentadienyl)magnesium Cp2Mg Zinc Dimethylzinc DMZn Diethylzinc DEZn Cylinder and Equipment Offerings AkzoNobel Metalorganic cylinders are designed and manufactured to the highest standards in industrial semiconductor manufacturing technologies: • Semiconductor industry compatible cleaning, regeneration and handling • Interior surface is electro-polished • Constant and consistent wall thickness which leads to defined thermal transfer • Optional purging valve configurations Our products For deliveryOur rangeof TMIn of we products have developed to the compound the Hiperquad semiconductor bubblers, which and offer Si-semiconductor the following benefits: industry includes ultra-high purity gallium-, indium-, aluminum-, magnesium- and zinc-based MO-sources. • Unique stability of the TMIn flow-rate and MO-concentration during the entire lifetime of the bubbler • CompleteElement utilization of the TMInChemical source up name to 98% Acronym Aluminum Trimethylaluminum TMAl Dimensions Low Ox – Trimethylaluminum TMAl LO Type Max. Max.Triethylaluminum Fitting Fill Fill TEAl width depth height height weight Gallium (mm) (mm)Trimethylgallium(mm) (mm) TMIn (gr) TMGa Hiperquad 350 89 87Triethylgallium300 152 350 TEGa Indium Trimethylindium TMIn Hiperquad 850 130 120 330 195 850 Magnesium Bis(cyclopentadienyl)magnesium Cp2Mg Zinc Dimethylzinc DMZn Heat exchangers and innovativeDiethylzinc thermostats DEZn Enabling customers to minimize downtime, we also offer convenient custom-designed heat-ex- changers that can be connected to traditional water baths, for several of our larger fill size bubblers. Cylinder and equipment offerings Nouryon metalorganic cylinders are designed and For delivery of TMIn we have developed the Hiperquad manufactured to the highest standards in industrial bubblers, which offer the following benefits: semiconductor manufacturing technologies: • Unique stability of the TMIn flow-rate and MO- • Semiconductor industry compatible cleaning, concentration during the entire lifetime of the bubbler regeneration and handling • Complete utilization of the TMIn source up to 98% • Interior surface is electro-polished • Constant and consistent wall thickness which leads to defined thermal transfer • Optional purging valve configurations Dimensions Type Max. Max. Fitting Fill Fill width depth height height weight (mm) (mm) (mm) (mm) TMIn (gr) Hiperquad 350 89 87 300 152 350 Hiperquad 850 130 120 330 195 850 Heat exchangers and innovative thermostats Enabling customers to minimize downtime, we also offer convenient custom- designed heat-exchangers that can be connected to traditional water baths, for several of our larger fill size bubblers. Our cylinders A variety of cylinder sizes with a range of volumes is available. The tables below provide a selection of cylinder dimensions and typical fill weight data for liquid MO-sources. More cylinder styles and sizes as well as other valve configurations are available on request. Cylinder volumes and dimensions Cylinder Gross Corpus Diameter Diptube Outlet Diptube Overall volume1 height height height outlet width (ml) (mm) (mm) (mm) (mm) (mm) (mm) 150 ml 150 108 51 235 248 83 219 400 ml 350 108 76 235 248 83 219 600 ml 540 164 76 291 303 83 219 1000 ml 980 168 102 295 308 83 219 3000 ml 2590 191 152 318 331 83 219 3800 ml 3800 195 168 335 348 83 219 8000 ml (8 L) 6400 400 168 514 527 83 220 20000 ml (20 L) 18250 403 273 511 524 83 319 Standard fill weights (gram)2 Cylinder TMGa TEGa TMIn TMAl DMZn DEZn Cp2Mg 150 ml 150 150 100 100 150 150 50 400 ml 350 350 250 230 400 400 100 600 ml 600 550 400 380 700 600 - 1000 ml 1000 1000 - 730 1100 1000 - 3000 ml 2900 2700 - 1900 3500 3000 - 3800 ml 3800 3600 - 2500 4700 4000 - 8000 ml (8 L) 7200 6600 - 4700 - - - 20000 ml (20 L) 20000 19000 - - - - - 1 Gross volume is defined as the maximum filling volume, 90% of total cylinder volume. 2 Fill weights based on maximum fill volume; smaller fill weights are available on request. Your safety is our priority Nouryon’s success in safely handling Metal Organics (MO) is due to our long-term commitment to safety. Knowledge of proper handling techniques, carefully designed facilities and thorough training of personnel can overcome the hazards. Personnel who understand and pay proper attention will be able to handle metal organics confidently and safely. Safety and handling Storage Safety services Our MO-sources like TMAl, TMGa MO sourches are stable when stored Nouryon is recognized as a global and TMln ignites upon exposure to air under a dry, inert atmosphere and leader in metal alkyl safety. We and reacts violently with water. They away from heat. MO’s may undergo always place safety as our top priority. must be handled under a dry, inert violent exothermic decomposition Sharing our experience in safety is atmosphere, e.g. nitrogen or argon. with flammable gas evolution if one of the most important resources TMAl may undergo exothermic stored at too high temperatures. we offer. Through our safety decomposition with evolution of Metal alkys should, in general, be kept programs we can provide expert flammable gas if heated above 6-12°C above their melting point. advice on the handling of these
Recommended publications
  • Comparison of Trimethylgallium and Triethylgallium As “Ga” Source
    Comparison of trimethylgallium and triethylgallium as “Ga” source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma- assisted atomic layer deposition Mustafa AlevliAli Haider, Seda Kizir, Shahid A. Leghari, and Necmi Biyikli Citation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A137 (2016); doi: 10.1116/1.4937725 View online: http://dx.doi.org/10.1116/1.4937725 View Table of Contents: http://avs.scitation.org/toc/jva/34/1 Published by the American Vacuum Society Articles you may be interested in Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34, 01A12501A125 (2015); 10.1116/1.4936230 Atomic layer deposition of GaN at low temperatures Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30, 01A12401A124 (2011); 10.1116/1.3664102 Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, 045203045203 (2016); 10.1063/1.4946786 Kinetics of thermal decomposition of triethylgallium, trimethylgallium, and trimethylindium adsorbed on GaAs(100) Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 9, (1998); 10.1116/1.577146 Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition Journal of Vacuum Science & Technology A: Vacuum, Surfaces,
    [Show full text]
  • Catalytic Asymmetric Addition of Diorganozinc Reagents to N
    Catalytic asymmetric addition of diorganozinc SPECIAL FEATURE reagents to N-phosphinoylalkylimines Alexandre Coˆ te´ , Alessandro A. Boezio, and Andre´ B. Charette* Department of Chemistry, University of Montreal, P.O. Box 6128, Station Downtown, Montreal, QC, Canada H3C 3J7 Edited by Jack Halpern, University of Chicago, Chicago, IL, and approved February 4, 2004 (received for review October 31, 2003) The synthesis of ␣-chiral amines bearing two alkyl groups has been hampered by the accessibility and stability of the alkylimine precursor. Herein, we report an efficient strategy to generate the alkyl-substituted imine in situ that is compatible with the Me- DuPHOS monoxide⅐Cu(I) catalyzed addition of diorganozinc re- agents. The sulfinic acid adduct of the imine is readily prepared by mixing diphenylphosphinic amide, the aldehyde, and sulfinic acid. The sulfinic acid adduct is generally isolated by filtration. The addition of diorganozinc reagents in the presence of Me-DuPHOS monoxide⅐Cu(I) and the in situ-generated imines affords the cor- Fig. 1. Bioactive ␣-chiral amines. responding ␣-chiral amines in high yields and enantiomeric excesses. sensitive imines from stable precursors has been a strategy that he synthesis of ␣-chiral amines using the catalytic asymmetric has been quite successful in a number of cases. Typically, a stable Taddition of diorganozinc reagents has produced very exciting imine adduct is used as a precursor and is converted to the imine results in recent years (1–3). This very important subunit is in situ (Scheme 2). The method involves the use of a leaving ␣ CHEMISTRY commonly found in many pharmaceuticals and other biologically group (LG) on the -carbon of the N-protected amine.
    [Show full text]
  • Pyrophoric Materials
    Appendix A PYROPHORIC MATERIALS Pyrophoric materials react with air, or with moisture in air. Typical reactions which occur are oxidation and hydrolysis, and the heat generated by the reactions may ignite the chemical. In some cases, these reactions liberate flammable gases which makes ignition a certainty and explosion a real possibility. Examples of pyrophoric materials are shown below. (List may not be complete) (a) Pyrophoric alkyl metals and derivatives Groups Dodecacarbonyltetracobalt Silver sulphide Dialkytzincs Dodecacarbonyltriiron Sodium disulphide Diplumbanes Hexacarbonylchromium Sodium polysulphide Trialkylaluminiums Hexacarbonylmolybdenum Sodium sulphide Trialkylbismuths Hexacarbonyltungsten Tin (II) sulphide Nonacarbonyldiiron Tin (IV) sulphide Compounds Octacarbonyldicobalt Titanium (IV) sulphide Bis-dimethylstibinyl oxide Pentacarbonyliron Uranium (IV) sulphide Bis(dimethylthallium) acetylide Tetracarbonylnickel Butyllithium (e) Pyrophoric alkyl non-metals Diethylberyllium (c) Pyrophoric metals (finely divided state) Bis-(dibutylborino) acetylene Bis-dimethylarsinyl oxide Diethylcadmium Caesium Rubidium Bis-dimethylarsinyl sulphide Diethylmagnesium Calcium Sodium Bis-trimethylsilyl oxide Diethylzinc Cerium Tantalum Dibutyl-3-methyl-3-buten-1-Yniborane Diisopropylberyllium Chromium Thorium Diethoxydimethylsilane Dimethylberyllium Cobalt Titanium Diethylmethylphosphine Dimethylbismuth chloride Hafnium Uranium Ethyldimthylphosphine Dimethylcadmium Iridium Zirconium Tetraethyldiarsine Dimethylmagnesium Iron Tetramethyldiarsine
    [Show full text]
  • Chemical List
    1 EXHIBIT 1 2 CHEMICAL CLASSIFICATION LIST 3 4 1. Pyrophoric Chemicals 5 1.1. Aluminum alkyls: R3Al, R2AlCl, RAlCl2 6 Examples: Et3Al, Et2AlCl, EtAlCl2, Me3Al, Diethylethoxyaluminium 7 1.2. Grignard Reagents: RMgX (R=alkyl, aryl, vinyl X=halogen) 8 1.3. Lithium Reagents: RLi (R = alkyls, aryls, vinyls) 9 Examples: Butyllithium, Isobutyllithium, sec-Butyllithium, tert-Butyllithium, 10 Ethyllithium, Isopropyllithium, Methyllithium, (Trimethylsilyl)methyllithium, 11 Phenyllithium, 2-Thienyllithium, Vinyllithium, Lithium acetylide ethylenediamine 12 complex, Lithium (trimethylsilyl)acetylide, Lithium phenylacetylide 13 1.4. Zinc Alkyl Reagents: RZnX, R2Zn 14 Examples: Et2Zn 15 1.5. Metal carbonyls: Lithium carbonyl, Nickel tetracarbonyl, Dicobalt octacarbonyl 16 1.6. Metal powders (finely divided): Bismuth, Calcium, Cobalt, Hafnium, Iron, 17 Magnesium, Titanium, Uranium, Zinc, Zirconium 18 1.7. Low Valent Metals: Titanium dichloride 19 1.8. Metal hydrides: Potassium Hydride, Sodium hydride, Lithium Aluminum Hydride, 20 Diethylaluminium hydride, Diisobutylaluminum hydride 21 1.9. Nonmetal hydrides: Arsine, Boranes, Diethylarsine, diethylphosphine, Germane, 22 Phosphine, phenylphosphine, Silane, Methanetellurol (CH3TeH) 23 1.10. Non-metal alkyls: R3B, R3P, R3As; Tributylphosphine, Dichloro(methyl)silane 24 1.11. Used hydrogenation catalysts: Raney nickel, Palladium, Platinum 25 1.12. Activated Copper fuel cell catalysts, e.g. Cu/ZnO/Al2O3 26 1.13. Finely Divided Sulfides: Iron Sulfides (FeS, FeS2, Fe3S4), and Potassium Sulfide 27 (K2S) 28 REFERRAL
    [Show full text]
  • Title Exploration of Dimethylzinc-Mediated Radical Reactions
    Title Exploration of Dimethylzinc-Mediated Radical Reactions. Author(s) Yamada, Ken-Ichi; Tomioka, Kiyoshi Citation The Chemical Record (2015), 15(5): 854-871 Issue Date 2015-10 URL http://hdl.handle.net/2433/203021 This is the peer reviewed version of the following article: Yamada, K.-i. and Tomioka, K. (2015), Exploration of Dimethylzinc-Mediated Radical Reactions. Chem. Rec., 15: 854‒871, which has been published in final form at http://dx.doi.org/10.1002/tcr.201500017. This article may be used for non-commercial purposes in accordance with Wiley Right Terms and Conditions for Self-Archiving.; The full-text file will be made open to the public on 17 JUL 2016 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.; This is not the published version. Please cite only the published version.; この論文は出版社版でありません。引用の際に は出版社版をご確認ご利用ください。 Type Journal Article Textversion author Kyoto University PersonalPersonal AccountAccount THE CHEMICAL Exploration of Dimethylzinc- RECORD Mediated Radical Reactions THE CHEMICAL RECORD Ken-ichi Yamada,[a] and Kiyoshi Tomioka[b] [a] Graduate School of Pharmaceutical Sciences, Kyoto University E-mail: [email protected] [b] Department of Medicinal Chemistry, Faculty of Pharmaceutical Sciences, Doshisha Women's College of Liberal Arts E-mail: [email protected] Received: [will be filled in by the editorial staff] Published online: [will be filled in by the editorial staff] ABSTRACT: In this account, our studies on radical reactions that are promoted by dimethylzinc and air are described. Advantages of this reagent and differences from conventional radical initiators, such as triethylborane, are discussed. Keywords: radical reaction, dimethylzinc, C(sp3)–H bond functionalization, C–C bond formation, Umpolung Introduction It has been long time since the word "radical" changed its useful functional group transformations via a radical meaning in chemistry.
    [Show full text]
  • Gallium in 2017 (PDF)
    2017 Minerals Yearbook GALLIUM [ADVANCE RELEASE] U.S. Department of the Interior April 2020 U.S. Geological Survey Gallium By Brian W. Jaskula Domestic survey data and tables were prepared by Wanda G. Wooten, statistical assistant. Low-grade primary gallium was recovered globally as a gallium production was 5% from 2007 through 2017. World byproduct of processing bauxite and zinc ores. No domestic high-grade secondary refined gallium production increased at a low-grade primary gallium was recovered in 2017. Imports CAGR of 7%. World gallium consumption, which increased at of gallium metal and gallium arsenide (GaAs) wafers plus a CAGR of 6% from 2007 through 2017, was estimated to have domestically refined and recycled gallium continued to account been 355 t in 2017. for all U.S. gallium consumption (metal and gallium in GaAs). Metal imports were 93% higher than those in 2016 (table 1). Production The leading sources of imported gallium metal were, in No domestic production of low-grade primary gallium was descending order, China (including Hong Kong), the United reported in 2017. Neo Performance Materials Inc. (Canada) Kingdom, France, Ukraine, Russia, and the Republic of Korea recovered gallium from new scrap materials, predominantly (table 4). A significant portion of imports was thought to be those generated during the production of GaAs ingots and low-grade gallium that was refined in the United States and wafers. Neo’s facility in Blanding, UT, had the capability to shipped to other countries. Data on refined gallium exports, produce about 50 metric tons per year of high-grade gallium. however, were not available.
    [Show full text]
  • Studies on Group Ii Metal Alkyls Particularly Those of Beryllium
    Durham E-Theses Studies on group ii metal alkyls particularly those of beryllium Robert, P.D. How to cite: Robert, P.D. (1968) Studies on group ii metal alkyls particularly those of beryllium, Durham theses, Durham University. Available at Durham E-Theses Online: http://etheses.dur.ac.uk/8717/ Use policy The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that: • a full bibliographic reference is made to the original source • a link is made to the metadata record in Durham E-Theses • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. Please consult the full Durham E-Theses policy for further details. Academic Support Oce, Durham University, University Oce, Old Elvet, Durham DH1 3HP e-mail: [email protected] Tel: +44 0191 334 6107 http://etheses.dur.ac.uk STUDIES ON GROUP II METAL ALKYLS PARTICULARLY THOSE OF BERYLLIUM by P.D. ROBERTS, B.Sc. A thesis submitted for the Degree of Doctor of Philosophy in the University of Durham JULY 1968 Acknowledgements The author wishes to thank Professor G.E. Coates, M.A. , D.Sc, F.R.I.C., under whose supervision this research was carried out, for his constant encouragement and valuable advice. Thanks are also given to Dr. A.J. Downs, formerly of the University of Newcastle upon Tyne, for his help with vibrational spectroscopy and to members of this department, especially Dr.
    [Show full text]
  • Adduct Purification of Trimethylgallium Using 4-Dimethylaminopyridine
    International Journal of Advanced Science and Technology Vol. 41, April, 2012 Adduct Purification of Trimethylgallium using 4-Dimethylaminopyridine Selvakumar Dhanasingh1*, Rajendra Singh2 and Mohammed Nasim3 1Defence BioEngineering and Electromedical laboratory, C. V. Raman Nagar, Bangalore – 560 093, India 2Directorate of ER & IPR, DRDO Bhawan, Rajaji Marg, New Delhi – 110105, India 3Defence Materials & Stores Research and Development Establishment, DMSRDE P.O., G.T. Road, Kanpur – 208 013, India [email protected] Abstract 1:1 and 2:1 adducts of trimethylgallium (TMGa) with 4-dimethylaminopyridine (DMAP) were synthesized and characterized by 1H, 13C NMR, FAB-MS and Trace elemental analyses using ICP-MS. Both adducts are non-pyrophoric, thermally dissociable and easy to handle. FAB-MS study suggests that the adducts are associated in tetrameric forms. TMGa of purity more than 99.999% (5N) was released from these adducts, which shows the adducts are potential candidates to produce high pure metal alkyl sources for Metal-Organic Chemical Vapor Deposition (MOCVD). Keywords: Trimethylgallium, pyrophoric, MOCVD precursor, adduct purification technique 1. Introduction The electronic properties of II-VI and III-V compound semiconducting thin films deposited by MOCVD method are mainly determined by the purity of the precursors [1, 2]. As most of the metal alkyls for MOCVD are volatile and highly reactive pyrophoric liquids, the physical purification methods such as, fractional distillation and low temperature crystallization are difficult to employ and often large amount of metal alkyls need to be discarded to obtain them with high purity. However, these metal alkyls can be purified by ‘adduct purification technique’, which involves the formation of adducts between the metal alkyl with an appropriate Lewis base, which are easy to handle and can be purified by re- crystallization [3, 4, 5].
    [Show full text]
  • Zno and Zncdo Metal Organic Vapor Phase Epitaxy: Epitaxy, Defects and Band Gap Engineering
    ZnO and ZnCdO metal organic vapor phase epitaxy: epitaxy, defects and band gap engineering By Vishnukanthan Venkatachalapathy Submitted in partial fulfillment of the requirements for the degree of Philosophiae Doctor Department of Physics/Centre for Materials science and Nanotechnology Faculty of Mathematics and Natural Sciences University of Oslo Dedicated to my father Abstract Zinc oxide (ZnO) and its ternary alloys have high potential to compete with III-V nitrides for optoelectronic applications. Furthermore, oxide semiconductors receive considerable attention due to their low cost of fabrication, chemical robustness and high thermal conductance. The goal of this work was (i) to explore manufacturing route of ZnO and ZnCdO films using metal organic vapor phase epitaxy (MOVPE) in vector flow epitaxy mode and (ii) to master structural/optical properties of these films for preparing such as components in electronics, optoelectronics and solar energy conversion. Our starting point was to study the influence of basic synthesis parameters on the structural and luminescence properties of pure ZnO films on c-axis oriented sapphire substrates. The samples were synthesized using previously unexplored for ZnO vector flow epitaxy mode of MOVPE employing systematic variations of fundamental synthesis parameters such as temperature, pressure, II/VI molar ratio, total carrier gas flow ratio, susceptor rotation rate, etc. It was concluded that the growth temperature affects the precursor pyrolysis and in these terms pre-determines the actual II/VI molar ratio available at the reaction zone. Concurrently, direct II/VI molar ratio variations by supplying different amount of precursors influences the properties too, for example, changing intrinsic defect balance in the films.
    [Show full text]
  • Gallium Arsenide
    GaAs GaInN Most efficient solar cells Most efficient white light GaN ITO Transparent conducting oxide Light emitting diodes blue 1907 The first light emitting diode (LED) made of SiC Gallium nitride (GaN) Aluminium gallium arsenide (AlGaAs) Henry Joseph Round Silicon carbide Gallium phosphide Indium gallium nitride etc To the Editors of Electrical World: SIRS: – During an investigation of the unsymmetrical passage of current through a contact of carborundum and other substances a curious phenomenon was noted. On applying a potential of 10 volts between two points on a crystal of carborundum, the crystal gave out a yellowish light. Only one or two specimens could be found which gave a bright glow on such a low voltage, but with 110 volts a large number could be found to glow. In some crystals only edges gave the light and others gave instead of a yellow light green, orange or blue. In all cases tested the glow appears to come from the negative pole, a bright blue-green spark appearing at the positive pole. In a single crystal, if contact is made near the center with the negative pole, and the positive pole is put in contact at any other place, only one section of the crystal will glow and that same section wherever the positive pole is placed. There seems to be some connection between the above effect and the e.m.f. produced by a junction of carborundum and another conductor when heated by a direct or alternating current; but the connection may be only secondary as an obvious explanation of the e.m.f.
    [Show full text]
  • ALD Grown Zinc Oxide with Controllable Electrical Properties
    ALD grown Zinc Oxide with controllable electrical properties E. Guziewicz 1, M. Godlewski 1,2 , L. Wachnicki 1, T.A. Krajewski 1, G. Luka 1, S. Gieraltowska 1, R. Jakiela 1, A. Stonert 3, W. Lisowski 4, M. Krawczyk 4, J.W. Sobczak 4, A. Jablonski 4 1Institute of Physics, Polish Academy of Science, Al. Lotników 32/46, 02-668 Warsaw, Poland 2 Dept. Mathematics and Natural Sciences, College of Sciences UKSW, ul. Dewajtis 5, 01-815 Warsaw, Poland 3The Andrzej Soltan Institute for Nuclear Studies, ul. Ho ża 69, 00-681 Warsaw, Poland 4 Institute of Physical Chemistry, PAS, ul. Kasprzaka 44/52, 01-224 Warsaw, Poland Abstract. The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free carrier concentration is very low. For optimized ALD process it can reach the level of 10 15 cm -3, while mobility of electrons is between 20 and 50 cm 2/V·s. Electrical parameters of ZnO films deposited by ALD at low temperature regime are appropriate for constructing of the ZnO-based p-n and Schottky junctions. We demonstrate that such junctions are characterized by the rectification ratio high enough to fulfill requirements of 3D memories and are deposited at temperature 100 oC which makes them appropriate for deposition on organic substrates. PACs: 81.15.Gh, 72.80.Ey, 73.40.Lq, 68.55.Ln Keywords: Atomic Layer Deposition, Zinc Oxide, thin films, electrical properties, Schottky junction, 3D memories 1 1.
    [Show full text]
  • The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition
    The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition DISSERTATION Presented in Partial Fulfillment of the Requirements for the Degree Doctor of Philosophy in the Graduate School of The Ohio State University By Nicholas G. Minutillo Graduate Program in Physics The Ohio State University 2014 Dissertation Committee: Professor Fengyuan Yang, Advisor Professor Jay A. Gupta Professor Klaus Honscheid Professor Mohit Randeria Copyright by Nicholas Gaetano Minutillo 2014 Abstract Semiconductor nanowires hold a wealth of promise for studying the fundamental physics of electron behavior and interactions in a quasi-one dimensional environment as well as components in or the foundation of technological advancement in electronic and spintronic devices. Especially in the case of spintronic applications, the crystalline environment must be highly controlled. Unlike in electronic devices, predicated on the transport or storage of charges, spintronic devices often depend on relative phases of spin states. These phases are easily lost in an environment where scattering probabilities are high. In any material system, control of the material fabrication is the limiting factor to achieving the theoretical characteristics and operation. Still an active area of research, bottom-up synthesis of semiconductor nanowires has yet to reach the level of control required for wide spread adoption as a base system in condensed matter research. At this point in time, the material synthesis to meet the criteria for advanced applications remains a bottle neck in advancing the application of GaAs or any other semiconductor nanowires. In this dissertation we discuss the vapor-liquid-solid (VLS) mechanism and its role in the growth of gallium arsenide and other III-V semiconductors.
    [Show full text]