Safety Data Sheet Material Name: Autoclean SDS ID: 00231763 (SINGAPORE)
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Taiwan Intellectual Property Court Finds Gudeng Precision Industrial Co., Ltd Infringes Entegris’ Reticle Pod Patent
PRESS RELEASE FOR IMMEDIATE RELEASE TAIWAN INTELLECTUAL PROPERTY COURT FINDS GUDENG PRECISION INDUSTRIAL CO., LTD INFRINGES ENTEGRIS’ RETICLE POD PATENT Judgement Awards Damages of $32.6 Million and the Recall and Destruction of Infringing Product BILLERICA, Mass., March 24, 2019 - Entegris, Inc. (NASDAQ: ENTG), a leader in specialty chemicals and advanced materials solutions for the microelectronics industry, received an oral judgement on March 22, from the Taiwan Intellectual Property Court finding that Gudeng Precision Industrial Co., Ltd. infringes Entegris’ Taiwan Patent No. I-317967. The judgement against Gudeng awarded Entegris NT$978,869,835 (US $32.6M) in damages and includes an order that Gudeng recall and destroy its infringing products. Importantly, the presiding judge stated that Gudeng shall not directly or indirectly manufacture, offer for sale, sell, use, or import the infringing Reticle SMIF Pod and other products that will infringe Entegris’ rights of R.O.C. Invention Patent No. I 317967 entitled "Reticle Carrier Including Reticle, Positioning and Location Means." Additionally, the judge instructed that Gudeng may recall and destroy infringing reticle pods. The Entegris EUV 1010 reticle pod represents a significant breakthrough in improving mask defectivity so customers implementing HVM for advance technology nodes can focus on increasing efficiency and throughput. The EUV 1010 was the first to be qualified by ASML for use in the NXE:3400B and beyond. ABOUT ENTEGRIS Entegris is a leader in specialty chemicals and advanced materials solutions for the microelectronics industry and other high-tech industries. Entegris is ISO 9001 certified and has manufacturing, customer service and/or research facilities in the United States, China, France, Germany, Israel, Japan, Malaysia, Singapore, South Korea, and Taiwan. -
I2m Facility Information
creating a material advantage Facility Information Industry Need Address: 9 Crosby Drive, Bedford, MA As smart phones, tablets and other electronics become Size: 80,000 square feet smaller, more powerful and consume less energy, the technol- ogies that are being employed to manufacture those devices Approximate number of employees: 100 are pushing the boundaries of physics. Entegris is enabling those technologies by solving the most difficult puri fication, Overview process control and material protection chal lenges in advanced semiconductor and electronics manufacturing. Entegris’ i2M Center for Advanced Materials Science (i2M Center) is one of the world’s most advanced centers for the Currently, semiconductor devices are manufactured using research, development and manufacturing of filtration media the most advanced processes and materials known to man technologies and proprietary, innovative low-temperature and require levels of purity that measures contamination in coating technologies. These products are core components parts per quadrillion (ppq). Achieving these precise levels of for filtration and electrostatic clamp (E-Chucks) solutions purity requires filtration solutions that can prevent nanolevel used in semiconductor and other demanding manufacturing particles, bubbles and ions from reaching the semiconductor environments. substrate during manufacturing. Polymeric membranes are the core material which is used to capture these contaminants. Located in Bedford, MA, the 80,000 square foot i2M Center These solutions help advanced high-tech manufacturers includes approximately 6,000 square feet of rated clean- improve productivity, performance and technology to develop room space. Entegris has invested more than $55 million next-generation semiconductors and electronics. in building infrastructure upgrades and equipment to create the i2M Center. -
Entegris Introduces New Taiwan Regional Service Center Today; Company, Industry, & Government Officials Join with Customers for Grand Opening
Entegris Introduces New Taiwan Regional Service Center Today; Company, Industry, & Government Officials Join With Customers For Grand Opening HSINCHU, Taiwan & MINNEAPOLIS, Sep 08, 2005 (BUSINESS WIRE) -- Company officials from Entegris, Inc. (NASDAQ:ENTG) are being joined today by representatives of the semiconductor industry, area government and customers for the official grand opening of the company's new Taiwan Regional Service Center (TRSC) in Hsinchu, Taiwan. Entegris' TRSC surpasses all competitors in its overall capabilities, level of cleaning and global reach. The TRSC provides state-of-the-art submicron cleaning capability and microcontamination analysis equipment, combined with the capacity to manage logistics, spare parts and recertification of wafer and reticle handling products for customers. As the global leader in purifying, protecting and transporting critical materials that enable the world's foremost industries, Entegris' TRSC provides submicron cleaning, logistics and product repair to support semiconductor, data storage and flat panel display customers. "This new service center further demonstrates Entegris' commitment to utilize our expertise, resources and technological capabilities to effectively and economically serve customers where they need us around the world," said Entegris President & CEO Gideon Argov. "Today is an important day that we proudly share with our customers, industry colleagues, friends and employees here in Taiwan." Entegris leased the new, 22,000 square-foot building in January 2005, and invested $3 million (U.S.) in creating this advanced- technology service center. A key component of the TRSC is that it replicates actual fab environments, and also features cleaning rooms ranging from Class 10,000 to Class 1 certified clean environments. Entegris' combination of facilities, equipment and process knowledge provides wafer-ready products directly from the new service center to customers, enabling them to focus on chip making activities and use more of their fab space for production work. -
Entegris Expands China Footprint Opening a New Office in Wuhan For
PRESS RELEASE FOR IMMEDIATE RELEASE ENTEGRIS EXPANDS CHINA FOOTPRINT OPENING A NEW OFFICE IN WUHAN FASTER RESPONSE AND SERVICE FOR ADVANCED NODE CUSTOMERS Shanghai, CHINA – May 16, 2018 – Entegris Inc. (Nasdaq: ENTG), a leader in specialty chemicals and advanced materials solutions, announced it has opened its 5th China-based office in Wuhan, Hubei Province. The Wuhan office brings together a team of Entegris experts in sales, customer service, technical support, and product management focused on providing the industry’s best services for customers in the Middle and West China. Through the new office, Entegris is better positioned to provide faster response times to customer technical and service needs. Additionally, the proximity to one of its local manufacturing partners, Hubei Jingxing, enables Entegris to provide greater flexibility and speed in product design and delivery, tailored to customers’ specific requirements. “With our latest expansion in Wuhan, we are better positioned to more swiftly meet the technical and commercial needs of our advanced node customers in middle China,” said Dr. Alan Chang, vice president, China Sales. “As complexity in chip design continues to grow, especially in technologies like 3D NAND, it becomes even more important to our customers to have on-demand access to our technical resources. For this reason, Entegris has expanded its locations and enhanced team member skillsets in China to help our customers here tackle their toughest manufacturing challenges.” About Entegris Entegris is a leader in specialty chemicals and advanced materials solutions for the microelectronics industry and other high-tech industries. Entegris is ISO 9001 certified and has manufacturing, customer service, and/or research facilities in the United States, China, France, Germany, Israel, Japan, Malaysia, Singapore, South Korea, and Taiwan. -
Process Monitoring Solutions Increasing Yield Through Complete Control of CMP PROCESS MONITORING SOLUTIONS
Process Monitoring Solutions Increasing yield through complete control of CMP PROCESS MONITORING SOLUTIONS Controlling Contaminants For more than 50 years, many high-tech industries With so much invested in equipment, having the proper have relied on Entegris to ensure the protection and metrology instrumentation in place will help ensure the purity of their technologies throughout the supply protection of your CMP slurry, with the added benefit chain, from the raw chemicals to the final products. of improving yield. Partnering with Entegris, we can At Entegris, we understand the unique challenges of help you evaluate your system and determine the contamination control to reduce defects and improve right, complementary metrology instruments for your yield. From chemical concentration monitoring to business needs. With a broad product offering, advanced fast and accurate measurement control, to advanced manufacturing capabilities, worldwide infrastructure, particle characterization, Entegris is well-positioned to and unmatched technical expertise, we provide proven offer chemical mechanical planarization (CMP) process performance and reliability to protect your overall stability monitoring solutions proven to increase yield, process quality and efficiency. device performance, and system reliability to reduce financial loss in the semiconductor fab and liability in the electronic device supply chain. We offer three types of process data analytics that can help ensure high CMP yields: electrochemical analysis during blending, in-line process chemistry monitoring, and particle size determination. CMP Process Overview Successful fabrication of high-performance, complex While necessary, CMP can contribute to yield loss if semiconductor devices relies on CMP to planarize the the process is not tightly controlled. Precise control of wafer surface before depositing the next layer of metal slurry chemistry and working particle size through the or dielectric. -
Reactions of Some Ammonium Fluorometalates with Xef2
Reactions of Some Ammonium Fluorometalates with XeF2 Jože Slivnik+*, Branko Družina, and Boris Žemva Jozef Stefan Institute and+Faculty for Natural Sciences and Technology, Edvard Kardelj University, Ljubljana, Yugoslavia Dedicated to Prof. Dr. Drs. h. c. Oskar Glemser on the occasion of his 70th birthday Z. Naturforsch. 36b, 1457-1460 (1981); received May 7, 1981 Xenon Difluoride Reactions, Ammonium Fluorometalates, Hydrazinium Fluorometalates The reactions between (NH^TiFe, (NH^ZrFe, (NfL^HfFe, (NELtfeVFe, (NH4)3CrF6, NH4MnF3, (NH4)3FeFe and excess xenon difluoride were investigated. The listed am- monium fluorometalates react with xenon difluoride to form corresponding xenon(II) fluorometalates, monoammonium fluorometalates with metal in the same oxidation state, and ammonium fluorometalates with metal in higher oxidation state, respectively. The reactions between binary fluorides and xenon following new compounds, not accessible by other difluoride or xenon hexafluoride, respectively, yield conventional methods, were isolated and charac- a series of xenon(II) or xenon(VI) fluorometalates. terized: XeFe • FeF3 [3], XeF6 • ZrF4, XeF6 • HfF4 We have investigated these reactions in detail [11], XeF6 • 2 AlFs and XeF6 • GaF3 [12]. This study succeeded to isolate and identify seven xenon(II) is still being continued. and thirteen xenon(VI) fluorometalates [1]. Following the same basic approach we extended Since in some cases the reaction between binary the investigations recently onto reactions between fluoride and xenon hexafluoride did not proceed at xenon difluoride or xenon hexafluoride and am- all under the applied reaction conditions, we monium fluorometalates. supposed that the binary fluoride is not reactive enough and that the reaction might proceed if the Experimental binary fluoride would be available in a more Materials reactive form. -
Safety Data Sheet Material Name: TEB SDS ID: ADC23950 (SINGAPORE)
Safety Data Sheet Material Name: TEB SDS ID: ADC23950 (SINGAPORE) SECTION 1: Identification Product identifier Material Name TEB Synonyms TRIETHYL BORATE; BORIC ACID, TRIETHYL ESTER; BORON ETHOXIDE; BORON TRIETHOXIDE; TRIETHYOXYBORANE; TRIETHOXYBORON Chemical Family esters Product Use semiconductor manufacture Restrictions on Use None known. Details of the supplier of the safety data sheet Entegris, Inc. 129 Concord Road Building 2 Billerica, MA 01821 USA Telephone Number: +1-952-556-4181 Telephone Number: +1-800-394-4083 (toll free within North America) Supplier Entegris Singapore Pte. Ltd. 31 Kaki Bukit Road 3, Techlink, #06-08/11 Singapore 417818 Telephone: +65-6745-2422 Fax: +65-6745-4477 Emergency # 800-101-2201(CHEMTREC) 1-703-527-3887 (International) E-mail: [email protected] SECTION 2: Hazards identification Singapore Standard SS 586-2:2014 Flammable Liquids - Category 2 Acute Toxicity - Oral - Category 4 Serious Eye Damage/Eye Irritation - Category 2 Specific Target Organ Toxicity - Single Exposure - Category 3 ( respiratory system ) Label elements Hazard symbols ____________________________________________________________ Page 1 of 10 Issue date: 2018-07-11 Revision 1.13 Print date: 2018-07-11 Safety Data Sheet Material Name: TEB SDS ID: ADC23950 (SINGAPORE) Signal word Danger Hazard statements H225 Highly flammable liquid and vapor. H302 Harmful if swallowed. H319 Causes serious eye irritation. H335 May cause respiratory irritation. Precautionary statements Prevention P210 Keep away from heat/sparks/open flame/hot surfaces - No smoking. P233 Keep container tightly closed. P240 Ground/Bond container and receiving equipment. P241 Use explosion-proof electrical/ventilating/lighting equipment. P243 Take precautionary measures against static discharge. P242 Use only non-sparking tools. -
Problems for Chapter 17
Molecular Modeling Problems Chapter 17 1. Argon Compounds? One of the major advantages of calculation over experiment is that “reality does not get in the way”. It is no harder to investigate the properties of labile compounds that may be difficult to isolate and characterize experimentally than it is to investigate those of stable compounds. In fact, it is possible to say whether experimental characterization can ever be achieved, that is, if the molecule of interest is actually an energy minimum. Noble gas compounds illustrate this. While xenon compounds are now numerous and a few compounds of krypton have now been reported, no argon compounds have been isolated or characterized. Do argon analogues of known xenon and krypton compounds actually exist (in the sense that they represent energy minima)? If so, do they exhibit similar geometries and charge distribution as their analogues? Obtain equilibrium geometries for argon difluoride, krypton difluoride and xenon difluoride using the Hartree-Fock 3-21G model. Start from bent structures even though. KrF2 and XeF2 are known to be linear (and ArF2 might very well be assumed to be linear as well). While the geometry optimization is able to move from a non-linear to a linear structure, it cannot do the reverse. Follow each optimization by an infrared spectrum calculation to tell you whether or not the structure is actually an energy minimum. Are KrF2 and XeF2 linear molecules? Is the calculated Kr-F bond distance in reasonable accord with the experimental value of 1.89Ǻ (the bond distance in XeF2 linear is not known)? Is ArF2 an energy minimum? Is it linear? If ArF2 is an energy minimum, is dissociation to Ar and F2 endothermic or exothermic? Are the corresponding dissociations of KrF2 and XeF2 endothermic or exothermic? Obtain electrostatic potential maps for the three compounds and display side by side on screen (and on the same scale). -
Noble Gas Bonding Interactions Involving Xenon Oxides and Fluorides
molecules Review Noble Gas Bonding Interactions Involving Xenon Oxides and Fluorides Antonio Frontera Department of Chemistry, Universitat de les Illes Balears, Crta de valldemossa km 7.5, 07122 Palma de Mallorca (Baleares), Spain; [email protected] Academic Editor: Felice Grandinetti Received: 17 July 2020; Accepted: 27 July 2020; Published: 28 July 2020 Abstract: Noble gas (or aerogen) bond (NgB) can be outlined as the attractive interaction between an electron-rich atom or group of atoms and any element of Group-18 acting as an electron acceptor. The IUPAC already recommended systematic nomenclature for the interactions of groups 17 and 16 (halogen and chalcogen bonds, respectively). Investigations dealing with noncovalent interactions involving main group elements (acting as Lewis acids) have rapidly grown in recent years. They are becoming acting players in essential fields such as crystal engineering, supramolecular chemistry, and catalysis. For obvious reasons, the works devoted to the study of noncovalent Ng-bonding interactions are significantly less abundant than halogen, chalcogen, pnictogen, and tetrel bonding. Nevertheless, in this short review, relevant theoretical and experimental investigations on noncovalent interactions involving Xenon are emphasized. Several theoretical works have described the physical nature of NgB and their interplay with other noncovalent interactions, which are discussed herein. Moreover, exploring the Cambridge Structural Database (CSD) and Inorganic Crystal Structure Database (ICSD), it is demonstrated that NgB interactions are crucial in governing the X-ray packing of xenon derivatives. Concretely, special attention is given to xenon fluorides and xenon oxides, since they exhibit a strong tendency to establish NgBs. Keywords: noble gas interactions; noncovalent interactions; crystal packing; xenon 1. -
Chemistry of the Noble Gases*
CHEMISTRY OF THE NOBLE GASES* By Professor K. K. GREE~woon , :.\I.Sc., sc.D .. r".lU.C. University of N ewca.stle 1tpon Tyne The inert gases, or noble gases as they are elements were unsuccessful, and for over now more appropriately called, are a remark 60 years they epitomized chemical inertness. able group of elements. The lightest, helium, Indeed, their electron configuration, s2p6, was recognized in the gases of the sun before became known as 'the stable octet,' and this it was isolated on ea.rth as its name (i]A.tos) fotmed the basis of the fit·st electronic theory implies. The first inert gas was isolated in of valency in 1916. Despite this, many 1895 by Ramsay and Rayleigh; it was named people felt that it should be possible to induce argon (apy6s, inert) and occurs to the extent the inert gases to form compounds, and many of 0·93% in the earth's atmosphere. The of the early experiments directed to this end other gases were all isolated before the turn have recently been reviewed.l of the century and were named neon (v€ov, There were several reasons why chemists new), krypton (KpVn'TOV, hidden), xenon believed that the inert gases might form ~€vov, stmnger) and radon (radioactive chemical compounds under the correct con emanation). Though they occur much less ditions. For example, the ionization poten abundantly than argon they cannot strictly tial of xenon is actually lower than those of be called rare gases; this can be illustrated hydrogen, nitrogen, oxygen, fl uorine and by calculating the volumes occupied a.t s.t.p. -
Safety Data Sheet Material Name: 408 Media SDS ID: 0611 (SINGAPORE)
Safety Data Sheet Material Name: 408 Media SDS ID: 0611 (SINGAPORE) SECTION 1: Identification Product identifier Material Name 408 Media Product Description The media contained in this product, when used as designed, under normal operating conditions, and installed and maintained according to product literature, is not expected to be hazardous. Classifications and hazards represented on this Safety Data Sheet are only applicable in the unlikely event that the purifier media is liberated from the purifier housing. The purifier has sieves internal to the housing to prevent the media from escaping during intended use. Product Use UHP Gas Purifier Restrictions on Use None known. Details of the supplier of the safety data sheet Entegris, Inc. 129 Concord Road Building 2 Billerica, MA 01821 USA Telephone Number: +1-952-556-4181 Telephone Number: +1-800-394-4083 (toll free within North America) Supplier Entegris Singapore Pte. Ltd. 31 Kaki Bukit Road 3, Techlink, #06-08/11 Singapore 417818 Telephone: +65-6745-2422 Fax: +65-6745-4477 Emergency # 800-101-2201(CHEMTREC) 1-703-527-3887 (International) E-mail: [email protected] SECTION 2: Hazards identification Singapore Standard SS 586-2:2014 Acute Toxicity - Inhalation - Dust/Mist - Category 3 (38.312% unknown ) Serious Eye Damage/Eye Irritation - Category 2 Germ Cell Mutagenicity - Category 2 Carcinogenicity - Category 1A Specific Target Organ Toxicity - Repeated Exposure - Category 1 ( respiratory system ) Specific Target Organ Toxicity - Repeated Exposure - Category 2 ( Immune system , kidneys , lungs ) ____________________________________________________________ Page 1 of 11 Issue date: 2019-02-14 Revision 1.0 Print date: 2019-02-14 Safety Data Sheet Material Name: 408 Media SDS ID: 0611 (SINGAPORE) Label elements Hazard symbols Signal word Danger Hazard statements H331 Toxic if inhaled. -
5.157 TABLE 5.29 Van Der Waals' Constants for Gases the Van Der
DEAN #37261 (McGHP) RIGHT INTERACTIVE top of rh PHYSICAL PROPERTIES 5.157 base of rh cap height TABLE 5.29 Van der Waals’ Constants for Gases base of text The van der Waals’ equation of state for a real gas is: na2 ͩͪP ϩ (V Ϫ nb) ϭ nRT for n moles V2 where P is the pressure, V the volume (in liters per mole ϭ 0.001 m3 per mole in the SI system), T the temperature (in degrees Kelvin), n the amount of substance (in moles), and R the gas constant. To use the values of a and b in the table, P must be expressed in the same units as in the gas constant. Thus, the pressure of a standard atmosphere may be expressed in the SI system as follows: 1 atm ϭ 101,325 N · mϪ2 ϭ 101,325 Pa ϭ 1.01325 bar The appropriate value for the gas constant is: 0.083 144 1 L · bar · KϪ1 · molϪ1 or 0.082 056 L · atm · KϪ1 · molϪ1 The van der Waals’ constants are related to the critical temperature and pressure, tc and Pc, in Table 6.5 by: 27 RT22 RT a ϭ ccand b ϭ 64 Pcc8 P Substance a,L2 · bar · molϪ2 b,L·molϪ1 Acetaldehyde 11.37 0.08695 Acetic acid 17.71 0.1065 Acetic anhydride 26.8 0.157 Acetone 16.02 0.1124 Acetonitrile 17.89 0.1169 Acetyl chloride 12.80 0.08979 Acetylene 4.516 0.05218 Acrylic acid 19.45 0.1127 Acrylonitrile 18.37 0.1222 Allene 8.235 0.07467 Allyl alcohol 15.17 0.1036 Aluminum trichloride 42.63 0.2450 2-Aminoethanol 7.616 0.0431 Ammonia 4.225 0.03713 Ammonium chloride 2.380 0.00734 Aniline 29.14 0.1486 Antimony tribromide 42.08 0.1658 Argon 1.355 0.03201 Arsenic trichloride 17.23 0.1039 Arsine 6.327 0.06048 Benzaldehyde 30.30 0.1553 Benzene 18.82