AN447: Printed Circuit Design Notes for Capacitive Sensing with the CS0
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Proximity Capacitive Sensor Technology for Touch Sensing Applications
Proximity Sensing White Paper Proximity Capacitive Sensor Technology for Touch Sensing Applications By Bryce Osoinach, Systems and Applications Engineer Contents Introduction .........................................................................................................................................................3 Proximity Capacitive Sensor Overview ...............................................................................................................4 Capacitance Sensors in Touch Sensing Applications ........................................................................................5 Additional Applications for Proximity Capacitive Sensors ..................................................................................8 Multiple Electrodes and Shield Drive Technology ...............................................................................................9 Conclusion ........................................................................................................................................................11 Proximity Capacitive Sensor Technology 2 Freescale Semiconductor, Inc. Introduction In 1831 Michael Faraday discovered electro-magnetic induction. Essentially, he found that moving a conductor through a magnetic field creates voltage that is directly proportional to the speed of the movement—the faster the conductor moves, the higher the voltage. Today, inductive proximity sensors use Faraday’s Law of Electromagnetic Induction to detect the nearness of conductive materials without actually -
Capacitive Sensing for Robot Safety Applications
Capacitive Sensing for Robot Safety Applications (CONFIDENTIAL, For Marshall Plan Foundation only) Thomas Schlegl Scholarship at Stanford University January to April 2013 c 2013 IEEE and Thomas Schlegl. Personal use of this material is permitted. Permission from IEEE and the author Thomas Schlegl must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Parts of this work have already been published in [Sch+10;SZ 11; SBZ11; Sch+11; SNZ12; Sch+12; SMZ12; Sch+13;SZ 13; Sch+ed;SZ 14; SMZ13]. These sections are marked with a footnote or references. This document is set in Palatino, compiled with pdfLATEX2e and Biber. The LATEX template from Karl Voit is based on KOMA script and can be found online: https://github.com/novoid/LaTeX-KOMA-template Abstract “Capacitive sensing is a mature measurement principle with wide application ranging from chemical sensing, over acceleration, pressure, force and precision position measurement to human machine interfaces found in billions of modern consumer electronic products. In this paper we present several approaches how capacitive sensing can be used for safety applications - an emerging field of usage of capacitive sensors. Capacitive sensing offers unique features that can help to overcome problems of other safety systems such as vision based principles. However, due to the uncertain environment and parasitic effects no general capacitance measurement system exists, which can be readily used for safety applications. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
PCF8883 Capacitive Touch/Proximity Switch with Auto-Calibration, Large Voltage Operating Range, and Very Low Power Consumption Rev
PCF8883 Capacitive touch/proximity switch with auto-calibration, large voltage operating range, and very low power consumption Rev. 4.1 — 14 September 2016 Product data sheet 1. General description The integrated circuit PCF8883 is a capacitive touch and proximity switch that uses a patented (EDISEN) digital method to detect a change in capacitance on a remote sensing plate. Changes in the static capacitance (as opposed to dynamic capacitance changes) are automatically compensated using continuous auto-calibration. Remote sensing plates (e.g. conductive foil) can be connected directly to the IC1 or remotely using a coaxial cable. 2. Features and benefits Dynamic proximity switch Digital processing method Adjustable sensitivity, can be made very high Adjustable response time Wide input capacitance range (10 pF to 60 pF) Automatic calibration A large distance (several meters) between the sensing plate and the IC is possible Open-drain output (P-type MOSFET, external load between pin and ground) Designed for battery powered applications (IDD = 3 A, typical) Output configurable as push-button, toggle, or pulse Wide voltage operating range (VDD = 3 V to 9 V) Large temperature operating range (Tamb = 40 C to +85 C) Internal voltage regulator Available in SOIC8 and wafer level chip-size package 3. Applications Proximity detection Proximity sensing in Mobile phones Portable entertainment units Switch for medical applications Switch for use in explosive environments Vandal proof switches Transportation: Switches in or under upholstery, leather, handles, mats, and glass 1. The definition of the abbreviations and acronyms used in this data sheet can be found in Section 21. NXP Semiconductors PCF8883 Capacitive touch/proximity switch with auto-calibration Buildings: switch in or under carpets, glass, or tiles Sanitary applications: use of standard metal sanitary parts (e.g. -
Negative Capacitance in a Ferroelectric Capacitor
Negative Capacitance in a Ferroelectric Capacitor Asif Islam Khan1, Korok Chatterjee1, Brian Wang1, Steven Drapcho2, Long You1, Claudy Serrao1, Saidur Rahman Bakaul1, Ramamoorthy Ramesh2,3,4, Sayeef Salahuddin1,4* 1 Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 2 Dept. of Physics, University of California, Berkeley 3 Dept. of Material Science and Engineering, University of California, Berkeley 4 Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, *To whom correspondence should be addressed; E-mail: [email protected] The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny1-5. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive1-3. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time–in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this ‘inductance’-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications. 1 Owing to the energy barrier that forms during phase transition and separates the two degenerate polarization states, a ferroelectric material could show negative differential capacitance while in non-equilibrium1-5. The state of negative capacitance is unstable, but just as a series resistance can stabilize the negative differential resistance of an Esaki diode, it is also possible to stabilize a ferroelectric in the negative differential capacitance state by placing a series dielectric capacitor 1-3. -
Proximity Capacitive Sensor Technology for Touch Sensing Applications
Proximity Sensing White Paper Proximity Capacitive Sensor Technology for Touch Sensing Applications By Bryce Osoinach, Systems and Applications Engineer Contents Introduction .........................................................................................................................................................3 Proximity Capacitive Sensor Overview ...............................................................................................................4 Capacitance Sensors in Touch Sensing Applications ........................................................................................5 Additional Applications for Proximity Capacitive Sensors ..................................................................................8 Multiple Electrodes and Shield Drive Technology ...............................................................................................9 Conclusion ........................................................................................................................................................11 Proximity Capacitive Sensor Technology 2 Freescale Semiconductor, Inc. Introduction In 1831 Michael Faraday discovered electro-magnetic induction. Essentially, he found that moving a conductor through a magnetic field creates voltage that is directly proportional to the speed of the movement—the faster the conductor moves, the higher the voltage. Today, inductive proximity sensors use Faraday’s Law of Electromagnetic Induction to detect the nearness of conductive materials without actually -
Very High Frequency Integrated POL for Cpus
Very High Frequency Integrated POL for CPUs Dongbin Hou Dissertation submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering Fred C. Lee, Chair Qiang Li Rolando Burgos Daniel J. Stilwell Dwight D. Viehland March 23rd, 2017 Blacksburg, Virginia Keywords: Point-of-load converter, integrated voltage regulator, very high frequency, 3D integration, ultra-low profile inductor, magnetic characterizations, core loss measurement © 2017, Dongbin Hou Dongbin Hou Very High Frequency Integrated POL for CPUs Dongbin Hou Abstract Point-of-load (POL) converters are used extensively in IT products. Every piece of the integrated circuit (IC) is powered by a point-of-load (POL) converter, where the proximity of the power supply to the load is very critical in terms of transient performance and efficiency. A compact POL converter with high power density is desired because of current trends toward reducing the size and increasing functionalities of all forms of IT products and portable electronics. To improve the power density, a 3D integrated POL module has been successfully demonstrated at the Center for Power Electronic Systems (CPES) at Virginia Tech. While some challenges still need to be addressed, this research begins by improving the 3D integrated POL module with a reduced DCR for higher efficiency, the vertical module design for a smaller footprint occupation, and the hybrid core structure for non-linear inductance control. Moreover, as an important category of the POL converter, the voltage regulator (VR) serves an important role in powering processors in today’s electronics. -
RX200, RX100 Series Application Note Overview of CTSU Operation
APPLICATION NOTE RX200, RX100 Series R01AN3824EU0100 Rev 1.00 Overview of CTSU operation May 10, 2017 Introduction This document gives an operational overview of the capacitive touch sensing unit (CTSU) associated with a variety of RX and Synergy MCUs, including functioning principals and waveforms describing its operation in mutual and self- capacitive modes. Target Device RX230, RX231, RX130, and RX113. Contents 1. The components of capacitive touch ............................................................................. 2 2. Generation of the Electrostatic Field ............................................................................. 2 2.1 Overview of Parasitic capacitance ............................................................................................ 3 3. CTSU Capacitance Estimation ........................................................................................ 4 3.1 Measuring current via the Self-Capacitance Method .............................................................. 4 3.2 Measuring current via the Mutual-Capacitance Method ......................................................... 6 3.2.1 Simulation of the currents in Mutual Mode ........................................................................ 8 3.3 Turning the current to a digital measurement ......................................................................... 9 R01AN3824EU0100 Rev 1.00 Page 1 of 11 May 10, 2017 RX200, RX100 Series Overview of CTSU operation 1. The components of capacitive touch Renesas’ capacitive touch solution -
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline • Low-frequency small-signal equivalent circuit model • High-frequency small-signal equivalent circuit model Reading Assignment: Howe and Sodini; Chapter 4, Sections 4.5-4.6 Announcements: 1.Quiz#1: March 14, 7:30-9:30PM, Walker Memorial; covers Lectures #1-9; open book; must have calculator • No Recitation on Wednesday, March 14: instructors or TA’s available in their offices during recitation times 6.012 Spring 2007 Lecture 10 1 Large Signal Model for NMOS Transistor Regimes of operation: VDSsat=VGS-VT ID linear saturation ID V DS VGS V GS VBS VGS=VT 0 0 cutoff VDS • Cut-off I D = 0 • Linear / Triode: W V I = µ C ⎡ V − DS − V ⎤ • V D L n ox⎣ GS 2 T ⎦ DS • Saturation W 2 I = I = µ C []V − V •[1 + λV ] D Dsat 2L n ox GS T DS Effect of back bias VT(VBS ) = VTo + γ [ −2φp − VBS −−2φp ] 6.012 Spring 2007 Lecture 10 2 Small-signal device modeling In many applications, we are only interested in the response of the device to a small-signal applied on top of a bias. ID+id + v - ds + VDS v + v gs - - bs VGS VBS Key Points: • Small-signal is small – ⇒ response of non-linear components becomes linear • Since response is linear, lots of linear circuit techniques such as superposition can be used to determine the circuit response. • Notation: iD = ID + id ---Total = DC + Small Signal 6.012 Spring 2007 Lecture 10 3 Mathematically: iD(VGS, VDS , VBS; vgs, vds , vbs ) ≈ ID()VGS , VDS ,VBS + id (vgs, vds, vbs ) With id linear on small-signal drives: id = gmvgs + govds + gmbvbs Define: gm ≡ transconductance [S] go ≡ output or drain conductance [S] gmb ≡ backgate transconductance [S] Approach to computing gm, go, and gmb. -
Distinguishing Users with Capacitive Touch Communication
Distinguishing Users with Capacitive Touch Communication Tam Vu, Akash Baid, Simon Gao, Marco Gruteser, Richard Howard, Janne Lindqvist, Predrag Spasojevic, Jeffrey Walling WINLAB, Rutgers University {tamvu, baid, gruteser, reh, janne, spasojev} @winlab.rutgers.edu {simongao, jeffrey.s.walling}@rutgers.edu ABSTRACT 1. INTRODUCTION As we are surrounded by an ever-larger variety of post-PC de- Mobile devices now provide us ubiquitous access to a vast array vices, the traditional methods for identifying and authenticating of media content and digital services. They can access our emails users have become cumbersome and time-consuming. In this pa- and personal photos, open our cars [41] or our garage doors [13], per, we present a capacitive communication method through which pay bills and transfer funds between our bank accounts, order mer- a device can recognize who is interacting with it. This method ex- chandise, as well as control our homes [10]. Arguably, they now ploits the capacitive touchscreens, which are now used in laptops, provide the de-facto single-sign on access to all our content and phones, and tablets, as a signal receiver. The signal that identifies services, which has proven so elusive on the web. the user can be generated by a small transmitter embedded into a As we increasingly rely on a variety of such devices, we tend to ring, watch, or other artifact carried on the human body. We ex- quickly switch between them and temporarily share them with oth- plore two example system designs with a low-power continuous ers [26]. We may let our children play games on our smartphones transmitter that communicates through the skin and a signet ring or share a tablet with colleagues or family members. -
Analyzing the Effect of Parasitic Capacitance in a Full-Bridge Class-D Current Source Rectifier on a High Step-Up Push–Pull Multiresonant Converter
sustainability Article Analyzing the Effect of Parasitic Capacitance in a Full-Bridge Class-D Current Source Rectifier on a High Step-Up Push–Pull Multiresonant Converter Anusak Bilsalam 1,* , Chainarin Ekkaravarodome 2, Viboon Chunkag 3 and Phatiphat Thounthong 4 1 Department of Electrical Engineering Technology, College of Industrial Technology (CIT), King Mongkut’s University of Technology North Bangkok (KMUTNB), 1518 Pracharat 1 Rd., Wongsawang, Bang Sue, Bangkok 10800, Thailand 2 Advanced Power Electronics and Experiment Laboratory, Department of Instrumentation and Electronics Engineering, Faculty of Engineering, King Mongkut’s University of Technology North Bangkok (KMUTNB), 1518 Pracharat 1 Rd., Wongsawang, Bang Sue, Bangkok 10800, Thailand; [email protected] 3 Department Electrical and Computer Engineering, Faculty of Engineering, King Mongkut’s University of Technology North Bangkok (KMUTNB), 1518 Pracharat 1 Rd., Wongsawang, Bang Sue, Bangkok 10800, Thailand; [email protected] 4 Renewable Energy Research Centre, Department of Teacher Training in Electrical Engineering, Faculty of Technical Education, King Mongkut’s University of Technology North Bangkok (KMUTNB), 1518 Pracharat 1 Rd., Wongsawang, Bang Sue, Bangkok 10800, Thailand; [email protected] * Correspondence: [email protected] Abstract: This paper presents an analysis on the effect of a parasitic capacitance full-bridge class-D current source rectifier (FB-CDCSR) on a high step-up push–pull multiresonant converter (HSPPMRC). The proposed converter can provide high voltage for a 12 V battery using an isolated transformer Citation: Bilsalam, A.; DC Ekkaravarodome, C.; Chunkag, V.; and an FB-CDCSR. The main switches of the push–pull and diode full-bridge rectifier can be operated Thounthong, P. -
Lnt Room 36-412
~n;A r lrr^-> , ;-rl _ L N T ROOM 36-412 ,~' t nl S i WITH r S E FEUN CA TESI i r 4 > i o ) Urlt..... .. i 6 I tv J:sos? ', f5a 11,!ls.tr''j'6 8^,t~~~ 0t-,,' -~~~nr w AAPLIFIERS WITI-`PRSAIBED FREQUENCY CHARACTERISTICS AND ARBITRARY BANDWIDTH JOHN G. LINVILL (Qh) copor TECHNICAL REPORT NO. 163 JULY 7, 1950 RESEARCH LABORATORY OF ELECTRONICS MASSACHUSETTS INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS t The research reported in this document was made possible through support extended the Massachusetts Institute of Tech- nology, Research Laboratory of Electronics, jointly by the Army Signal Corps, the Navy Department (Office of Naval Research) and the Air Force (Air Materiel Command), under Signal Corps Contract No. W36-039-sc-32037, Project No. 102B; Department of the Army Project No. 3-99-10-022. This report is based on a thesis in the Department of Electrical Engineering, M.I.T. I _ _ I _ __ _ MASSACHUSETTS INSTITUTE OF TECHNOLOGY RESEARCH LABORATORY OF ELECTRONICS Technical Report No. 163 July 7, 1950 AMPLIFIERS WITH PRESCRIBED FREQUENCY CHARACTERISTICS AND ARBITRARY BANDWIDTH John G. Linvill Abstract The amplifier chain, a cascade connection of amplifier tubes connected by two- terminal or two-terminal-pair interstages, is the basic component of the amplifiers designed. Shunt capacitance in the interstages imposes a limit on the amplification per stage over a prescribed band of frequencies. The limit of amplification per stage is inversely proportional to the bandwidth. The method of design of amplifier chains pre- sented leads to simple interstages which are economically close to the maximum in performance for the shunt capacitance present.