Effect of Parasitic Capacitance in Op Amp Circuits (Rev. A)
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1.5A, 24V, 17Mhz Power Operational Amplifier Datasheet (Rev. E)
OPA564 www.ti.com SBOS372E –OCTOBER 2008–REVISED JANUARY 2011 1.5A, 24V, 17MHz POWER OPERATIONAL AMPLIFIER Check for Samples: OPA564 1FEATURES 23• HIGH OUTPUT CURRENT: 1.5A DESCRIPTION • WIDE POWER-SUPPLY RANGE: The OPA564 is a low-cost, high-current operational – Single Supply: +7V to +24V amplifier that is ideal for driving up to 1.5A into reactive loads. The high slew rate provides 1.3MHz – Dual Supply: ±3.5V to ±12V full-power bandwidth and excellent linearity. These • LARGE OUTPUT SWING: 20VPP at 1.5A monolithic integrated circuits provide high reliability in • FULLY PROTECTED: demanding powerline communications and motor control applications. – THERMAL SHUTDOWN – ADJUSTABLE CURRENT LIMIT The OPA564 operates from a single supply of 7V to 24V, or dual power supplies of ±3.5V to ±12V. In • DIAGNOSTIC FLAGS: single-supply operation, the input common-mode – OVER-CURRENT range extends to the negative supply. At maximum – THERMAL SHUTDOWN output current, a wide output swing provides a 20VPP (I = 1.5A) capability with a nominal 24V supply. • OUTPUT ENABLE/SHUTDOWN CONTROL OUT • HIGH SPEED: The OPA564 is internally protected against over-temperature conditions and current overloads. It – GAIN-BANDWIDTH PRODUCT: 17MHz is designed to provide an accurate, user-selected – FULL-POWER BANDWIDTH AT 10VPP: current limit. Two flag outputs are provided; one 1.3MHz indicates current limit and the second shows a – SLEW RATE: 40V/ms thermal over-temperature condition. It also has an Enable/Shutdown pin that can be forced low to shut • DIODE FOR JUNCTION TEMPERATURE down the output, effectively disconnecting the load. MONITORING The OPA564 is housed in a thermally-enhanced, • HSOP-20 PowerPAD™ PACKAGE surface-mount PowerPAD™ package (HSOP-20) with (Bottom- and Top-Side Thermal Pad Versions) the choice of the thermal pad on either the top side or the bottom side of the package. -
Designing Linear Amplifiers Using the IL300 Optocoupler Application Note
Application Note 50 Vishay Semiconductors Designing Linear Amplifiers Using the IL300 Optocoupler INTRODUCTION linearizes the LED’s output flux and eliminates the LED’s This application note presents isolation amplifier circuit time and temperature. The galvanic isolation between the designs useful in industrial, instrumentation, medical, and input and the output is provided by a second PIN photodiode communication systems. It covers the IL300’s coupling (pins 5, 6) located on the output side of the coupler. The specifications, and circuit topologies for photovoltaic and output current, IP2, from this photodiode accurately tracks the photoconductive amplifier design. Specific designs include photocurrent generated by the servo photodiode. unipolar and bipolar responding amplifiers. Both single Figure 1 shows the package footprint and electrical ended and differential amplifier configurations are discussed. schematic of the IL300. The following sections discuss the Also included is a brief tutorial on the operation of key operating characteristics of the IL300. The IL300 photodetectors and their characteristics. performance characteristics are specified with the Galvanic isolation is desirable and often essential in many photodiodes operating in the photoconductive mode. measurement systems. Applications requiring galvanic isolation include industrial sensors, medical transducers, and IL300 mains powered switchmode power supplies. Operator safety 1 8 and signal quality are insured with isolated interconnections. These isolated interconnections commonly use isolation 2 K2 7 amplifiers. K1 Industrial sensors include thermocouples, strain gauges, and pressure transducers. They provide monitoring signals to a 3 6 process control system. Their low level DC and AC signal must be accurately measured in the presence of high 4 5 common-mode noise. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
NTE7144 Integrated Circuit BIMOS Operational Amplifier W/MOSFET Input, Bipolar Output
NTE7144 Integrated Circuit BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output Description: The NTE7144 is an integrated circuit operational amplifier in an 8–Lead Mini–DIP type package that combines the advantages of high–voltage PMOS transistors with high–voltage bipolar transistors on a single monolithic chip. This device features gate–protected MOSFET (PMOS) transistors in the in- put circuit to provide very–high–input impedance, very–low–input current, and high–speed perfor- mance. The NTE7144 operates at supply voltages from 4V to 36V (either single or dual supply) and is internally phase–compensated to achieve stable operation in unity–gain follower operation. The use of PMOS field–effect transistors in the input stage results in common–mode input–voltage capability down to 0.5V below the negative–supply terminal, an important attribute for single–supply applications. The output stage uses bipolar transistors and includes built–in protection against dam- age from load–terminal short–circuiting to either supply–rail or to GND. Features: D MOSFET Input Stage: Very High Input Impedance Very Low Input Current Wide Common–Mode Input Voltage Range Output Swing Complements Input Common–Mode Range D Directly Replaces Industry Type 741 in Most Applications Applications: D Ground–Referenced Single–Supply Amplifiers in Automobile and Portable Instrumentation D Sample and Hold Amplifiers D Long–Duration Timers/Multivibrators (Microseconds – Minutes – Hours) D Photocurrent Instrumentation D Peak Detectors D Active Filters D Comparators D Interface in 5V TTL Systems and other Low–Supply Voltage Systems D All Standard Operational Amplifier Applications D Function Generators D Tone Controls D Power Supplies D Portable Instruments D Intrusion Alarm Systems Absolute Maximum Ratings: DC Supply Voltage (Between V+ and V– Terminals). -
Example of a MOSFET Operational Amplifier
Example of a MOSFET Operational Amplifier: This circuit is one I “designed” as an example for Engineering 1620. It is certainly not fully optimized and I am not sure it is free of errors. It is based on a 1.5 micron, P-well process and therefore uses an N-channel differential pair for its input. This is somewhat unusual because P-channel devices have lower intrinsic noise and are the device-type of choice for the input stage. I did this simply to avoid doing your SPICE assignment for you. The overall properties of the circuit are given in the table below. Amplifier Property Value A0 – DC Gain 86 DB (X20,000) fp – dominant pole position 400 Hz fGBW 8.0 MHz fU – unity gain frequency 5.6 MHz Output stage resistance at low frequency 277 K Zero position 10.7 MHz Slew Rate 710 6 V/sec Output stage quiescent current 65 a Opamp quiescent current 103 a Bias circuit quiescent current 104 a Total system quiescent current 210 a VDD 5.0 volts Total system power 1.1 mW MOSFET Operational Amplifier Gain and Phase 10 0 18 0 80 12 0 60 Gain 60 Phase 40 0 Gain (DB) 20 -60 Phase (deg.) 0 -120 -20 -180 1.00E+02 1.00E+03 1.00E+04 1.00E+05 1.00E+06 1.00E+07 1.00E+08 Frequency (Hz) Phase margin = 60 deg. Parameter Table for MOSFET Opamp Example element model vds vgs vth vov id gm ro m1 nssb 0.748 0.851 0.547 0.304 3.77E-05 2.90E-04 5.54E+05 m10 nssb 3.368 0.851 0.547 0.304 4.12E-05 3.11E-04 8.09E+05 m12 nssb 0.711 0.711 0.546 0.165 3.51E-05 5.01E-04 5.05E+05 m13 nssb 0.838 0.851 0.547 0.304 3.79E-05 2.91E-04 5.92E+05 m14 nssb 3.078 1.079 0.840 0.239 3.51E-05 -
Negative Capacitance in a Ferroelectric Capacitor
Negative Capacitance in a Ferroelectric Capacitor Asif Islam Khan1, Korok Chatterjee1, Brian Wang1, Steven Drapcho2, Long You1, Claudy Serrao1, Saidur Rahman Bakaul1, Ramamoorthy Ramesh2,3,4, Sayeef Salahuddin1,4* 1 Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 2 Dept. of Physics, University of California, Berkeley 3 Dept. of Material Science and Engineering, University of California, Berkeley 4 Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, *To whom correspondence should be addressed; E-mail: [email protected] The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny1-5. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive1-3. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time–in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this ‘inductance’-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications. 1 Owing to the energy barrier that forms during phase transition and separates the two degenerate polarization states, a ferroelectric material could show negative differential capacitance while in non-equilibrium1-5. The state of negative capacitance is unstable, but just as a series resistance can stabilize the negative differential resistance of an Esaki diode, it is also possible to stabilize a ferroelectric in the negative differential capacitance state by placing a series dielectric capacitor 1-3. -
AN55 Power Supply Bypassing for High-Voltage Operational Amplifiers
AN55 Power Supply Bypassing for High-Voltage Operatinal Amplifiers POWER SUPPLY BYPASSING FOR HIGH-VOLTAGE OPERATIONAL AMPLIFIERS With the introduction of Apex’s high-voltage amplifiers like PA89 and PA99, new issues arise in the realm of circuit board layout and power supply bypassing. Working with these amplifiers, designers quickly realize that the same rules do not apply between bypassing high- and low-voltage Op-Amps. This applications infor- mation is meant to assist in designing the bypass system in a high-voltage operational amplifier circuit and choosing the perfect capacitors for use in such designs. THE NEED FOR POWER SUPPLY BYPASSING Before finding a couple of high-voltage capacitors and tacking them onto your supply rails, it is vital to realize the purpose of these capacitors and what we need them to do. Power supply bypass capacitors are there to stabilize the supply voltages of a circuit. Logically, the next question to answer would be, “What causes supply voltages to change?” This list can go on, but the most common reasons for changing supply voltages are power interruptions, high-frequency voltage/current spikes, and high-current draws. Figure 1: Power Supply Rejection Chart of PA89 100 80 60 40 20 WŽǁĞƌ^ƵƉƉůLJZĞũĞĐƟŽŶ͕W^Z;ĚͿ 0 1 10100 1k 10k 100k1M 10M Frequency, F (Hz) The first two entries on the list can be lumped into one category called “high-frequency events.” One close look at the datasheet for PA89 yields the Power Supply Rejection chart. As the frequency increases, power supply rejection falls off rather quickly. For example, if the power supply rail experiences a 100 kHz spike, then as much as 1% of that high-frequency voltage change will show up on the output. -
A Differential Operational Amplifier Circuit Collection
Application Report SLOA064A – April 2003 A Differential Op-Amp Circuit Collection Bruce Carter High Performance Linear Products ABSTRACT All op-amps are differential input devices. Designers are accustomed to working with these inputs and connecting each to the proper potential. What happens when there are two outputs? How does a designer connect the second output? How are gain stages and filters developed? This application note answers these questions and gives a jumpstart to apprehensive designers. 1 INTRODUCTION The idea of fully-differential op-amps is not new. The first commercial op-amp, the K2-W, utilized two dual section tubes (4 active circuit elements) to implement an op-amp with differential inputs and outputs. It required a ±300 Vdc power supply, dissipating 4.5 W of power, had a corner frequency of 1 Hz, and a gain bandwidth product of 1 MHz(1). In an era of discrete tube or transistor op-amp modules, any potential advantage to be gained from fully-differential circuitry was masked by primitive op-amp module performance. Fully- differential output op-amps were abandoned in favor of single ended op-amps. Fully-differential op-amps were all but forgotten, even when IC technology was developed. The main reason appears to be the simplicity of using single ended op-amps. The number of passive components required to support a fully-differential circuit is approximately double that of a single-ended circuit. The thinking may have been “Why double the number of passive components when there is nothing to be gained?” Almost 50 years later, IC processing has matured to the point that fully-differential op-amps are possible that offer significant advantage over their single-ended cousins. -
9 Op-Amps and Transistors
Notes for course EE1.1 Circuit Analysis 2004-05 TOPIC 9 – OPERATIONAL AMPLIFIER AND TRANSISTOR CIRCUITS . Op-amp basic concepts and sub-circuits . Practical aspects of op-amps; feedback and stability . Nodal analysis of op-amp circuits . Transistor models . Frequency response of op-amp and transistor circuits 1 THE OPERATIONAL AMPLIFIER: BASIC CONCEPTS AND SUB-CIRCUITS 1.1 General The operational amplifier is a universal active element It is cheap and small and easier to use than transistors It usually takes the form of an integrated circuit containing about 50 – 100 transistors; the circuit is designed to approximate an ideal controlled source; for many situations, its characteristics can be considered as ideal It is common practice to shorten the term "operational amplifier" to op-amp The term operational arose because, before the era of digital computers, such amplifiers were used in analog computers to perform the operations of scalar multiplication, sign inversion, summation, integration and differentiation for the solution of differential equations Nowadays, they are considered to be general active elements for analogue circuit design and have many different applications 1.2 Op-amp Definition We may define the op-amp to be a grounded VCVS with a voltage gain (µ) that is infinite The circuit symbol for the op-amp is as follows: An equivalent circuit, in the form of a VCVS is as follows: The three terminal voltages v+, v–, and vo are all node voltages relative to ground When we analyze a circuit containing op-amps, we cannot use the -
Very High Frequency Integrated POL for Cpus
Very High Frequency Integrated POL for CPUs Dongbin Hou Dissertation submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering Fred C. Lee, Chair Qiang Li Rolando Burgos Daniel J. Stilwell Dwight D. Viehland March 23rd, 2017 Blacksburg, Virginia Keywords: Point-of-load converter, integrated voltage regulator, very high frequency, 3D integration, ultra-low profile inductor, magnetic characterizations, core loss measurement © 2017, Dongbin Hou Dongbin Hou Very High Frequency Integrated POL for CPUs Dongbin Hou Abstract Point-of-load (POL) converters are used extensively in IT products. Every piece of the integrated circuit (IC) is powered by a point-of-load (POL) converter, where the proximity of the power supply to the load is very critical in terms of transient performance and efficiency. A compact POL converter with high power density is desired because of current trends toward reducing the size and increasing functionalities of all forms of IT products and portable electronics. To improve the power density, a 3D integrated POL module has been successfully demonstrated at the Center for Power Electronic Systems (CPES) at Virginia Tech. While some challenges still need to be addressed, this research begins by improving the 3D integrated POL module with a reduced DCR for higher efficiency, the vertical module design for a smaller footprint occupation, and the hybrid core structure for non-linear inductance control. Moreover, as an important category of the POL converter, the voltage regulator (VR) serves an important role in powering processors in today’s electronics. -
RX200, RX100 Series Application Note Overview of CTSU Operation
APPLICATION NOTE RX200, RX100 Series R01AN3824EU0100 Rev 1.00 Overview of CTSU operation May 10, 2017 Introduction This document gives an operational overview of the capacitive touch sensing unit (CTSU) associated with a variety of RX and Synergy MCUs, including functioning principals and waveforms describing its operation in mutual and self- capacitive modes. Target Device RX230, RX231, RX130, and RX113. Contents 1. The components of capacitive touch ............................................................................. 2 2. Generation of the Electrostatic Field ............................................................................. 2 2.1 Overview of Parasitic capacitance ............................................................................................ 3 3. CTSU Capacitance Estimation ........................................................................................ 4 3.1 Measuring current via the Self-Capacitance Method .............................................................. 4 3.2 Measuring current via the Mutual-Capacitance Method ......................................................... 6 3.2.1 Simulation of the currents in Mutual Mode ........................................................................ 8 3.3 Turning the current to a digital measurement ......................................................................... 9 R01AN3824EU0100 Rev 1.00 Page 1 of 11 May 10, 2017 RX200, RX100 Series Overview of CTSU operation 1. The components of capacitive touch Renesas’ capacitive touch solution -
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models
Lecture 10 MOSFET (III) MOSFET Equivalent Circuit Models Outline • Low-frequency small-signal equivalent circuit model • High-frequency small-signal equivalent circuit model Reading Assignment: Howe and Sodini; Chapter 4, Sections 4.5-4.6 Announcements: 1.Quiz#1: March 14, 7:30-9:30PM, Walker Memorial; covers Lectures #1-9; open book; must have calculator • No Recitation on Wednesday, March 14: instructors or TA’s available in their offices during recitation times 6.012 Spring 2007 Lecture 10 1 Large Signal Model for NMOS Transistor Regimes of operation: VDSsat=VGS-VT ID linear saturation ID V DS VGS V GS VBS VGS=VT 0 0 cutoff VDS • Cut-off I D = 0 • Linear / Triode: W V I = µ C ⎡ V − DS − V ⎤ • V D L n ox⎣ GS 2 T ⎦ DS • Saturation W 2 I = I = µ C []V − V •[1 + λV ] D Dsat 2L n ox GS T DS Effect of back bias VT(VBS ) = VTo + γ [ −2φp − VBS −−2φp ] 6.012 Spring 2007 Lecture 10 2 Small-signal device modeling In many applications, we are only interested in the response of the device to a small-signal applied on top of a bias. ID+id + v - ds + VDS v + v gs - - bs VGS VBS Key Points: • Small-signal is small – ⇒ response of non-linear components becomes linear • Since response is linear, lots of linear circuit techniques such as superposition can be used to determine the circuit response. • Notation: iD = ID + id ---Total = DC + Small Signal 6.012 Spring 2007 Lecture 10 3 Mathematically: iD(VGS, VDS , VBS; vgs, vds , vbs ) ≈ ID()VGS , VDS ,VBS + id (vgs, vds, vbs ) With id linear on small-signal drives: id = gmvgs + govds + gmbvbs Define: gm ≡ transconductance [S] go ≡ output or drain conductance [S] gmb ≡ backgate transconductance [S] Approach to computing gm, go, and gmb.