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Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Wide-bandgapWide-bandgap focus:focus: PowerPower electronicselectronics atat IEDMIEDM BoostingBoosting LEDLED outputoutput GreenGreen laserslasers

LEDs produced on 6” wafers • Emcore’s China JV to Huainan Backlighting rebounds • States lure Silicon Valley CIGS start-ups

contents 3

News semiconductorTODAY Markets 6 COMPOUNDS & ADVANCED SILICON LED market hits $10bn in 2010 • GaAs IC market grows 36% in 2010 Microelectronics 12 Vol. 5 • Issue 10 • Dec 2010 /Jan 2011 WIN expands • Anadigics joins NASDAQ Global Select Market Wide-bandgap electronics 20 DOE grant for SiC HEV chargers • Powdec unveils 600V GaN Schottky Materials and processing equipment 26 Soitec & SEI to co-develop GaN • Monocrystal launches 10” sapphire LEDs 41 LEDs produced on 6” wafers • TV backlighting demand rebounding • Optogan opens largest LED plant in Eastern Europe Optoelectronics 52 Terahertz quantum cascade laser operated at higher temperature p46 Optogan’s new LED component & Optical communications 58 module factory in St Petersburg, the Luxtera sells AOC business to Molex • Finisar raises $118m largest LED plant in Eastern Europe. Photovoltaics 63 States lure Silicon Valley CIGS start-ups for production Technology focus: LEDs 82 Taiwan researchers make steps to improve LED output Technology focus: LEDs 84 Modified p-type layer increases light output from nitride LED

Technology focus: LEDs 86 p57 Scattering-assisted injection has More uniform InGaN for record efficiency semi-polar green LED allowed emission from a quantum cascade laser at a teraherz frequency of Technology focus: Lasers 88 1.8THz at a temperature up to 163K. SEI’s semi-polar green laser lowers threshold current by 2–3x Technology focus: Lasers 90 Corning probes optical losses in nitride laser at wafer-level Technology focus: Nitride microelectronics 92 Ohio boosts nitride tunneling current to 118A/cm2 at –1V Technology focus: Nitride HEMTs 94 SiN raises breakdown voltage without current collapse p100 AlGaN imager after flip-chip Technology focus: Nitride HEMTs 96 integration and Si substrate removal, AlGaN-channel with over 50% Al achieves 1800V breakdown reported at IEDM by IMEC/CRHEA- CNRS/Royal Observatory of Belgium. Conference report: IEDM 98 Power, speed and other highlights at IEDM Cover: Osram Opto Suppliers’ Directory 104 Semiconductors has won the annual Beckurts Prize of Event Calendar 110 Germany’s Karl Heinz Beckurts Advertisers’ Index 110 Foundation for “pioneering work in Contribute to Semiconductor Today researching direct green semiconductor We want to hear from researchers, engineers and managers interested lasers”, which promise to open up new in contributing articles. Ideas for Feature articles or one-page Opinion markets such as ultra-compact mobile RGB laser projectors. p52 articles can be e-mailed to the Editor at [email protected] www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 4 editorial

Nitrides power boom semiconductorTODAY COMPOUNDS & ADVANCED SILICON As well as a plethora of news reports on developments in silicon carbide targeted at power electronic devices (including Japan’s Showa Denko Editor Mark Telford making SiC a focus of its new five-year business plan — see pages 20–23), Tel: +44 (0)1869 811 577 December saw the IEEE’s annual International Electron Devices Meeting Cell: +44 (0)7944 455 602 focus on power electronics, particularly gallium nitride (see page 98). Fax:+44 (0)1242 291 482 E-mail: [email protected] We also report recent research on GaN high-electron-mobility transistors, including raising their breakdown voltage. The UK’s QinetiQ/University of Commercial Director/Assistant Editor Darren Cummings Sheffield used SiN bi-layer passivation to avoid current collape (page 94), Tel: +44 (0)121 288 0779 while the University of Fukui, Sharp and Sumitomo Electric Industries (SEI) Cell:+44 (0)7990 623 395 produced AlGaN channels with Al content exceeding 50% for the first time, Fax:+44 (0)1242 291 482 E-mail: [email protected] achieving record breakdown of 1800V for AlGaN-channel HEMTs (page 96). Advertisement Manager Also, in optoelectronics, SEI has used its semi-polar free-standing GaN Jon Craxford substrates to fabricate green laser diodes with optimized quantum well Tel:+44 (0)207 193 9749 structures, cutting threshold current density to nearly half that of Cell:+44 (0)7989 558 168 conventional polar c-plane devices in the 520–530nm range (rather than Fax:+44 (0)1242 291 482 E-mail: [email protected] the theoretical 65%) — see page 88. The variation in threshold current Original design Paul Johnson with temperature was also smaller than for c-plane green lasers. www.higgs-boson.com Meanwhile, Osram Opto has won a prize in Germany for its work in Semiconductor Today covers the developing direct-emitting green laser diodes (page 52), and UCSB spin-off R&D and manufacturing of Soraa has demonstrated green lasers emitting over 75mW of cw power at compound semiconductor and 520–525nm, suitable for >20 lumen pico projectors with much reduced advanced silicon materials and devices (e.g. GaAs, InP and SiGe wafers, chips speckle compared with conventional green lasers based on second- and modules for microelectronic and harmonic generation. Soraa exhibited its lasers in early January at the optoelectronic devices such as RFICs, Consumer Electronics Show (CES) in Las Vegas, where MicroVision lasers and LEDs in wireless and optical communications, etc). displayed a prototype RGB laser projector following December’s deal with Pioneer to jointly commercialize laser display products (page 54). Regular issues contain: ● news (funding, personnel, facilities, Osram Opto also recently doubled the brightness of its green LEDs, and is technology, applications and markets); seeking partners to develop office projectors (with the LED due for market ● feature articles (technology, markets, launch this summer— see page 50). In addition, a team from UCSB, Sharp regional profiles); ● conference reports; and substrate maker Mitsubishi Chemical has achieved record output of ● event calendar and event previews; 9.9mW and external quantum efficiency of 20.4% for green LEDs on semi- ● suppliers’ directory. polar GaN (page 86). Meanwhile, Taiwan’s National Cheng-Kung University Semiconductor Today (ISSN 1752-2935) has boosted nitride LED output both by using a stepped series of quantum is published free of subscription charge wells in an electron-emitting layer to improve electron capture in the active in a digital format 10 times per year by Juno Publishing and Media Solutions Ltd, light-emitting region (page 82) and by using a selective high barrier region Suite no. 133, 20 Winchcombe Street, (SHBR) under the p-electrode to reduce current crowding and photon Cheltenham GL52 2LY, UK. See: absorption in the hole injection layer (page 84). www.semiconductor-today.com/subscribe.htm Also, following the USA’s Lumileds (now in mass production on 6” wafers), © 2011 Juno Publishing and Media Taiwanese LED makers Lextar and Epistar may introduce 6” production in Solutions Ltd. All rights reserved. Semiconductor Today and the editorial second-half 2011, while December’s $91m IPO of US-based SemiLEDs material contained within is the copyright (which manufactures in Taiwan) will fund 6” development (page 42–49). of Juno Publishing and Media Solutions Ltd. Epistar is also investing more in China joint venture United LED Shan Dong, Reproduction in whole or in part without permission is forbidden. In most cases, as well as forming the new JV KFES Lighting with Great Wall Kaifa (page 47). permission will be granted, if the author, ULED joins China-based new entrants APOLLO Precision and Aqualite in magazine and publisher are acknowledged. ordering multiple MOCVD reactors from Aixtron (page 28–29). Disclaimer: Material published within Despite a rebound in TV backlighting demand from Q4/2010’s slowdown, Semiconductor Today does not necessarily there are concerns about China’s subsidies on MOCVD reactor puchases reflect the views of the publisher or staff. Juno Publishing and Media Solutions Ltd driving LED production overcapacity (page 7). So, much hinges on the and its staff accept no responsibility for expected take-off of the LED lighting market in 2012 to prevent oversupply. opinions expressed, editorial errors and Mark Telford, Editor damage/injury to property or persons as a result of material published. [email protected]

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AIXTRON AG / KAISERSTRASSE 98 / 52134 HERZOGENRATH / GERMANY / [email protected] / WWW.AIXTRON.COM 6 news LED market grows from $6.1bn in 2009 to $10bn in 2010 Samsung jumps to second; to challenge Nichia in 2011

Although the TV backlighting boom 2009 and 2010, with Seoul Semi- with the market, but they look set temporarily fell back in fourth- conductor, Samsung LED and Cree to fall in rank due to tremendous quarter 2010 due to weaker among the suppliers with the growth from Seoul Semiconductor demand and supply chain correc- strongest growth in 2010. and Cree. Along with Samsung, tions, 2010 was still a year of However, in 2011 Nichia will be these suppliers are among those tremendous growth in the LED challenged strongly by Samsung who have grown even more than industry, dramatically higher than LED, which now has the capacity to 64% in 2010. the typical growth rates of recent take the number 1 position, and Market shares vary by application years, according to IMS Research. increasing demand for LED TVs segment. For lighting, IMS believes The analyst firm believes that the from Q2/2011 onwards should Cree is the market leader. For market for LEDs (including all types: enable them to do so. IMS ranks automotive, Osram is the market standard, AlInGaP and InGaN) has Samsung as third in 2009 and leader. Nichia is also strong in both grown from $6.1bn in 2009 to about second in 2010, swapping places these sectors as well as backlight- $10bn in 2010, driven by economic with Osram, which has previously ing and signage/large displays. recovery, lighting and above all ranked second for many years. However, 2011 will be an interesting backlights, especially in TVs. Lumileds (ranked third by IMS in year for the LED industry in terms Suppliers are hence having to grow 2006, 2007 and 2008) has fallen to of market shares, reckons IMS, by 64% this year just to maintain fourth in 2009 and a provisional 6th with Samsung and others continu- their market share. in 2010. Its market share has ing to challenge Nichia’s long- Nichia is still the number one in actually been fairly steady as they standing position as market leader. market share by total revenue in are estimated to have grown in line www.imsresearch.com

US enterprise LED lighting market to grow 30% in 2011, and reach $1bn by 2014

The US market for commercial and opportunities for startups, and 1.Recent advances in LED chip industrial LED lighting is forecasted venture capital funding has flowed performance that allow more cost- to be $330m in 2010, as the trans- into the sector in hundreds of effective designs for replacing formation of lighting technology to millions of dollars, say the market existing lighting systems; LEDs is beginning in this sector research firms. However, the 2.Newly introduced utility energy- first, according to the report ‘Enter- incumbent sales channel controlled efficiency financial incentives for prise LED Lighting, Trends, Oppor- by the likes of Sylvania, Osram and converting to these LED-based tunities and Leading Market Players Philips presents a challenge to new- systems; in Commercial and Industrial LED comers and requires a new channel 3.Increased interest from building Lighting’ from Groom Energy and approach or aggressive partnering owners in applying sustainably Greentech Media Research. The with these existing vendors. oriented lighting retrofits that save market sector should grow by more Venture investors such as Alan money for their operations. than 30% next year and surpass Salzman of VantagePoint Venture “We’re seeing a whole range of $1bn in annual revenue by 2014. Partners see this transformation well engineered new products that The report provides a guide to the occurring in lighting, with everything produce high-quality light and market, with profiles of the the top switching to solid-state lighting and provide strong financial return 50 LED fixture makers and ten LED causing “a $100bn industry to flip”. based on their energy savings,” component providers, analyzing In Salzman’s view, the mammoth says report co-author Fritz Troller, the top four enterprise LED market lighting incumbents like Philips, GE Groom Energy’s VP of marketing. leaders including Cree, Philips, and Osram “might catch up — or “It’s a perfect combination to Lighting Science Group and BetaLED. might not”. produce accelerated LED market The complex engineering challenges The study also recognizes that adoption.” behind LED lighting (compared to rapid market growth will come from www.groomenergy.com incandescents) have created three emerging trends: www.greentechmedia.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Markets 7 LED oversupply accelerating due to cut in usage per panel Samsung and LG battle over leadership in LED consumption

LED supply growth is significantly China’s MOCVD subsidies, MOCVD optical films caused the reduction, outpacing demand growth, creating shipments and supply growth are which is contributing to a growing a widening surplus and increased not slowing down, resulting in an LED oversupply. pricing pressure on vendors, accelerating supply imbalance that The latest ‘Quarterly GaN LED according to IMS Research’s latest is expected to widen through 2012 Supply and Demand Report’ also ‘Quarterly GaN LED Supply and if MOCVD shipments remain on tracks LED consumption by panel Demand Report’, which features a schedule.” supplier in the notebook, monitor new LED supply and demand model The latest report (which reveals and TV markets, where Korea’s LG built by a new global team of each panel suppliers’ quarterly Display consumed the most LEDs in authors. panel shipments, LED panel ship- notebooks in Q3/2010 and is “LED supply is rapidly expanding ments, number of LEDs per panel expected to lead in Q4/2010. In on China’s MOCVD stimulus pro- and LED consumption at every size, monitors, LG also led in Q3, but gram, ramping of recently installed resolution and refresh rate) shows Samsung is expected to lead in Q4. tools and improving yields on exist- that the weighted average number In TVs, Samsung led in Q3 and is ing tools,” says senior VP Ross of edge-lit LEDs per panel fell by expected to lead in Q4. Young. “On the other hand, a about 30% in both TVs and moni- Regarding total LED consumption, significant second-half 2010 reduc- tors from second-quarter 2010 to Samsung led in Q3 and is expected tion in LEDs per panel is causing third-quarter 2010 as panel and to lead in Q4, at more than 2bn demand to grow slower than backlight suppliers further optimize LEDs. However, LG Display is expected, leading to reduced fab their designs to reduce costs. expected to lead for full-year 2010, utilization and increased pricing Improvements in light-guide and at nearly 6bn LEDs consumed. pressure,” he adds. “Because of LED efficiencies and optimization of www.ledmarketresearch.com

LED lighting $15.4bn in 2011 as market share tops 10%

The high-brightness LED market 100% says will grow 53% from US$8.25bn in Digitimes 2010 to US$12.6bn in 2011, 80% Research. according to the latest data from 60% Lin Digitimes Research. In particular, estimated significant growth in the LED indus- 40% that LED try will be generated by lighting lighting 20% applications. The overall use of demand LEDs in lighting will rise from 4.8bn 0% will units in 2010 to 12.4bn units in 2013 2012 2011 2010 2009 2008 increase 2011, as the effects of LED light Others 9.1% 9.0% 7.8% 12% 14.8% 15.1% at a bulbs replacing incandescent bulbs Lighting 23.5% 18.3% 13.8% 7.0% 4.2% 3.3% com- will start to show in 2011. Car 5.5% 5.8% 6.9% 9.4% 11.8% 13.2% pound Although lighting will not repre- Billboard 10.9% 12.0% 14.4% 16.2% 18.4% 20.7% annual sent a high share of the overall LED Large-size LCD 37.3% 39.0% 35.2% 28.0% 14.6% 2.1% growth market (accounting for just 3.2% Handheld devices 13.7% 15.9% 21.9% 27.4% 36.1% 45.5% rate of the overall LED industry value in HB-LED usage as a proportion of application, 2008–2013. (CAGR) 2010), major countries worldwide of 97.4% have laid down LED lighting policies due to trial projects in many major from 2009 to 2013, which is more and been actively promoting the cities in China, USA and Europe, than the expected CAGR of 62.6% development of the LED lighting demand for LED streetlamps will for LEDs used in large-size LCD industry due to growing environ- rise from 2.2 million units in 2011 backlighting. mental concerns. to 9.8 million in 2013. The overall LED lighting market will Global demand for LED light bulbs With major countries promoting reach US$15.4bn in 2011, when will more than quadruple from 596 LED lighting, LED lumen efficiency LED lighting devices should account million units in 2011 to 2.5bn units has been improving significantly, for 10.6% of the overall lighting in 2013, notes Digitimes Research and the prices for LED lighting are market, Lin adds. analyst Jessie Lin. In particular, dropping 20–30% every year, www.digitimes.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 8 News: Markets CdTe to maintain lead over silicon in cost CIGS to overtake crystalline silicon in profitability by 2013 Advances in crystalline silicon tech- benchmark for solar modules. ● Multicrystalline silicon remains nology, and the falling cost of the Cadmium telluride is limited in effi- highly profitable as COGS decline. polysilicon raw material, have only ciencies, but is the absolute leader The dominant technology will con- increased the pressure on manu- in cost,” says Ted Sullivan, senior tinue to be profitable throughout facturers of emerging thin-film analyst and lead author of the the value chain as vertically integ- technologies, including thin-film report. “These two technologies will rated players drive cost from silicon (TF-Si), cadmium telluride continue to be highly profitable,” he $1.45/W in 2009 to $0.93/W in (CdTe), and copper indium gallium projects. “The profitability of thin-film 2015, assuming poly pricing at diselenide (CIGS), according to a silicon is much dicier, but CIGS is $70/kg. Efficiency will be a key new report ‘Module Cost Structure positioned to outplace crystalline driver of cost reduction, rising from Breakdown: Can Thin Film Survive silicon in profitability by 2013 as 14% in 2009 to 16.1% in 2015. the Crystalline Silicon Onslaught?’ leading developers improve process ● Improvements enabled by from Lux Research. stability.” Oerlikon’s new ThinFab line will push In the face of renewed pricing To forecast CIGS sputtered thin-film silicon efficiencies from pressures, solar device makers how module on glass 9% to above 11%. Significant have had to refocus on minimizing developers (Lux Research’s improvements in output will cut costs and maximizing performance would reduce depreciated CapEx per watt, and help benchmark, as many need to improve profit the key com- to reduce TF-Si costs from $1.32/W margins or face extinction, says the ponents of given its critical in 2009 to $0.80/W in 2015. market research firm. In particular, cost (capital, mass of ● CdTe technology remains the with a clear edge in both efficiency materials, developers) will long-term leader in terms of COGS. and profit margin, crystalline silicon utilities and Led by First Solar, CdTe has a sig- solar modules threaten to steal labor), Lux see COGS nificantly lower cost structure than market share from thin-film solar Research built plummet from mc-Si, and its cost reductions will technologies, the report adds. detailed cost- $1.69/W to march onward, keeping it the most The report compares incumbent of-goods-sold $0.76/W as profitable solar technology, as multicrystalline silicon (mc-Si) (COGS) mod- COGS falls from $0.80/W in 2009 technology (representing about els for the efficiency to $0.54/W in 2015. 80% of the crystalline silicon market) four key tech- improves from ● Costs for select CIGS technologies on a $/Watt basis against three nologies (mc- 10% to 14.2% drop dramatically. CIGS sputtered challengers: TF-Si, CdTe and CIGS. Si, TF-Si, CdTe and factory on glass (Lux Research’s bench- It also surveys process changes and CIGS) mark, given its critical mass of and cost-reduction efforts that through 2015, nameplate developers) will see COGS plummet module developers have under- including both capacity and from $1.69/W to $0.76/W as effi- taken, and forecasts which technol- glass and flex- yields grow, ciency improves from 10% to 14.2% ogy will gain a long-term cost ible substrates allowing and factory nameplate capacity and advantage at the module level. for CIGS. The yields grow, allowing gross margins “Crystalline silicon is dominant by key observa- gross margins over 30% for top developers. volume and remains the cost/price tions include: over 30% www.luxresearchinc.com

CIS/CIGS PV market to grow at CAGR of 43.9% to 2015 Total thin-film photovoltaic market forecast to grow at 32.2% from $3.4bn in 2009 to $19.4bn in 2015 Low cost and optimum efficiency is photovoltaic market is expected to selenide/copper indium gallium driving the growth of thin-film PV grow at an estimated compound diselenide (CIS/CIGS) is expected cells in the overall photovoltaic annual growth rate (CAGR) of to grow at a CAGR of up to 43.9% market, according to the market 32.2% from $3,406m in 2009 to from 2010 to 2015. Meanwhile, research report ‘Thin Film PV- $19,422m in 2015. grid-connected power supply Advanced Technologies and Global Although amorphous silicon applications are expected to have Market (2008–2015)’ from Market- contributes the most to the total the highest CAGR of 39.1%. sandMarkets. The global thin-film thin-film PV market, copper indium www.marketsandmarkets.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com

10 News: Markets Skyworks overtakes RFMD as biggest GaAs vendor after global market exceeded $4bn

Driven by smartphones and con- However, less than 1% market three-quarters of the year,” notes sumer adoption of data-intensive share separates the two firms. Eric Higham, director of the applications, the total market value TriQuint Semiconductor Inc of Hills- Strategy Analytics GaAs and for gallium arsenide revenues has boro, OR and Avago Technologies Compound Semiconductor Service. grown strongly since the low of both recorded strong revenue “This growth is driven by consumer early 2009, according to the growth, gaining substantially on demand for new data-intensive Strategy Analytics GaAs and industry leaders. applications, smartphones and Compound Semiconductors (GaAs) “Even the infrastructure that supports report ‘GaAs Device Vendor Market though rev- Growth is driven these capabilities,” Higham adds. Share 2009: North America’. enue from by consumer “We expect these drivers to The dramatic slowdown of produc- the GaAs demand for new continue fueling growth through tion that hit the industry at the end market in data-intensive 2010.” of 2008 continued into the first part 2009 was The report provides strategic of 2009 and challenged the entire only applications, comments, representative products supply chain, says market research slightly smartphones and and selected news items for a com- firm Strategy Analytics. Despite higher than the infrastructure prehensive set of North American this, global GaAs revenue rose 1% 2008, the GaAs vendors. It also identifies the from 2008 to $4.03bn for full-year story that that supports top ten global vendors in terms of 2009. emerges is these capabilities. GaAs device market share. In particular, Skyworks Solutions the strong We expect these Strategy Analytics estimates that Inc of Woburn, MA edged past RF industry drivers to continue six of the top ten GaAs vendors — Micro Devices Inc of Greensboro, recovery including all four top contenders — NC to become the biggest North during fueling growth are located in North America. American GaAs vendor by revenue. the last through 2010 www.strategyanalytics.com WIN surpasses Eudyna as largest Asia-Pac GaAs vendor Four Asia-Pac vendors in global top-ten, led by WIN in 5th Due to the continuing growth in GaAs vendor revenue rankings due WIN’s growth also makes it the the gallium arsenide industry, to an accelerating global trend largest GaAs vendor overall in the Taiwan’s WIN Semiconductors is toward outsourced and hybrid Asia-Pacific region, surpassing expected to become the largest manufacturing. “A notable devel- Sumitomo Electric’s Eudyna GaAs foundry in the world by the opment in this region is the growth Devices group. The report also end of 2010, according to the of pure-play foundry WIN Semi- highlights the effect of many Strategy Analytics GaAs and conductors,” notes Eric Higham, large Japanese electronics firms Compound Semiconductors (GaAs) director of the Strategy Analytics either merging or re-structuring report ‘GaAs Device Vendor Market GaAs and during 2009. Share 2009: Asia–Pacific and Compound The Japanese The Japanese electronics industry Europe’. The report also estimates Semiconductor electronics is working through consolidation of that four of the top ten GaAs Service. industry is large GaAs suppliers like Eudyna, vendors globally are located in “Growth in working NEC, OKI, Renesas, Sony, Toshiba, the Asia-Pacific region, led by GaAs demand Sanyo and Panasonic. WIN in the fifth place. and a trend to through Strategy Analytics reckons that Driven by smartphones and con- more foundry consolidation RFMD’s European fab may sumer adoption of data-intensive outsourcing of large GaAs challenge Europe’s main GaAs applications, the total market by suppliers foundries UMS and OMMIC as they value for GaAs revenues globally has enabled suppliers like begin supplying European defense has grown strongly from the lows them to dou- Eudyna, NEC, applications. of early 2009, reaching $4.03bn ble their GaAs OKI, Renesas, With strong demand and a for full-year 2009 (a slight revenues in Sony, Toshiba, settling global economy, the increase on 2008). the past two GaAs industry is poised for strong In particular, WIN vaulted into the years,” he Sanyo and growth in 2010, concludes fifth place in the Strategy Analytics adds. Panasonic Strategy Analytics .

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Markets 11 GaAs IC market grows 36% Growth of 18% expected in 2011 In 2010, strong demand in wireless (both cell phones and WiFi) has driven 36% growth in the GaAs IC market (the highest since 2003’s 52%), according to a report from The Information Network. By comparison, the silicon IC market grew 33% in 2010. In 2011, strong momentum will drive the GaAs IC market to grow 18%, it is reckoned. Every cell phone contains power amplifiers (PA), which enable the handset to transmit voice and data back to the base-station tower, which routes a call to another phone number or Internet address. PAs, the most critical radio frequency component in the phone, are currently dominated by circuits made with GaAs. In particular, third-generation (3G) handsets often contain up to five PAs, and GaAs makes up 100% of the market, which is close to $5bn. In addition, the number of PAs per handset is growing due to complex 3G systems, global roaming support, and data roaming support. Pricing for PAs has increased from $0.80 per handset to $2.90 currently, and is projected to increase to more than $3.50 after LTE (long-term evolution) and AWS (advanced wireless services) spectrum emerge on the market in advanced handsets. While industrialized countries are using 3G networks, today’s world is a mixture of 2/2.5G and 3G networks. The heavy majority of subscribers are actually on 2G-based networks and are predicted to remain so for a number of years, says The Information Network. Of new handsets sold in 2010, about 50% will still be 2G. 2G handsets contain one PA, so it represents a sizable market. But because they are not as technologically advanced as 3G cell phones, particularly smartphones, silicon is making inroads into the GaAs domain. For 2009, 90% of PAs were made in GaAs, 5% in silicon CMOS, and 5% in silicon LDMOS. Leading GaAs RF IC makers in the USA include RF Micro Devices, Anadigics, TriQuint, Skyworks and Hittite. For both Skyworks and RFMD, 70–80% of GaAs business is in PAs. Besides the technical dynamics, Skyworks has positioned itself in the market with the mid-2009 acquisition of CMOS PA supplier Axiom Microdevices Inc. Also, in Sep- tember 2009, privately held Black Sand Technologies Inc of Austin, TX announced the world’s first 3G CMOS RF PA. Black Sand’s proprietary CMOS PA architecture offers a breakthrough in combined performance, cost, battery life and reliability for mobile devices, says The Information Network. Other CMOS PA companies of note include Javelin and Amalfi. Another rumored to be working on CMOS PA is ACCO Semiconductor Inc of Sunnyvale, CA. Replacing GaAs with CMOS can improve manufacturing yield, performance, cost, battery life and call quality, says The Information Network. The cost for GaAs is about $0.10/mm2. By comparison, CMOS cost depends on process node, but mature CMOS technology pricing is often $0.05/mm2 or lower, or even as low as $0.02/mm2. www.theinformationnet.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 12 News: Microelectronics HTC selects Skyworks power amplifier modules and switches for 4G smart phones

Skyworks Solutions Inc of Woburn, need to open menus. A directional coupler is integrated MA, USA, which manufactures “By leveraging our technology into the modules, eliminating the linear products, power amplifiers, leadership, integration capabilities need for any external coupler. front-end modules and radio solu- and scale advantages, Skyworks is Of the Skyworks switches selected tions for handset and infrastructure capitalizing on the rising tide of by HTC, the SKY13309-370LF is equipment, says that its highly increasing RF content associated a GaAs pHEMT IC single-pole, integrated power amplifier modules with these band-intensive 3G and three-throw (SP3T) antenna switch (PAMs) and switch technology are 4G architectures,” Liam K. Griffin, operating in the LF–3GHz frequency powering multiple smart phones Skyworks’ senior VP of sales & range. Switching between the from Taiwan-based HTC (one of the marketing. antenna and transmit/receive fastest-growing companies in the Of the power amplifier modules (Tx/Rx) ports is accomplished with mobile sector), including the EVO, selected by HTC, the SKY77701, three control voltages. The low Desire HD and Desire Z. SKY77702, SKY77703, SKY77704 loss, high isolation, high linearity, The EVO 4G features Wi-Fi with and SKY77705 are fully matched small size and low-cost features instant access for up to five com- 10-pad surface-mount modules suit wireless local-area network puters, a true high definition (HD) developed for wideband code divi- (WLAN) and Bluetooth systems camcorder with HD multimedia sion multiple access (WCDMA) operating in the 2.4–2.5GHz interface cable that allows flat- applications. The modules pack full frequency band. screen connections, large 4.3”-wide 1920–1980MHz (SKY77701), The SKY13362-389LF is a GaAs video graphics array resolution, 1850–1910MHz (SKY77702), pHEMT single-pole, ten-throw a multi-touch screen, Web connec- 1710–1785MHz (SKY77703), (SP10T) antenna switch with an tivity that is up to 10 times faster, 824–849MHz (SKY77704), and integrated CMOS decoder and access to live-streaming video 880–915MHz (SKY77705) dual low-pass harmonic filters. applications, and an 8 megapixel bandwidth coverage into a single, It has five Tx/Rx ports that suit any camera with auto focus. The compact package. Because of high combination of 2G/3G multimode Android-based Desire HD houses efficiencies attained throughout the cellular applications, Skyworks a bright LCD display, Dolby Mobile entire power range, the PAMs says. and SRS virtual sound, and is the deliver unsurpassed talk-time The SKY13364-389LF is a GaAs first to be powered by the new advantages. The devices also meet pHEMT SP10T antenna switch with 1GHz Qualcomm 8255 Snapdragon the stringent spectral linearity an integrated CMOS decoder and processor. The Desire Z features a requirements of high-speed dual low-pass harmonic filters. unique ‘pop hinge’ that opens to downlink packet access (HSDPA), It has four WCDMA Tx/Rx ports, reveal a QWERTY keyboard with a high-speed uplink packet access four GSM Rx ports, and two GSM variety of shortcuts and two cus- (HSUPA), and long-term evolution Tx ports that suit cellular handsets tomizable keys for instant access to (LTE) data transmission with high and data-card applications. common functions without the power-added efficiency (PAE). www.skyworksinc.com

Kopin announces $15m stock repurchase program Kopin Corp of Taunton, MA, USA, with applicable legal requirements. ers,” believes president & CEO which makes III-V heterojunction The plan does not obligate Kopin to Dr John C.C. Fan. “With $110m in bipolar transistor (HBT) epiwafers acquire any particular amount of cash and equivalents as of 25 Sep- and CyberDisplay LCDs, says that common stock, and can be sus- tember and no long-term debt, we its board of directors has authorized pended at any time at the firm’s have ample resources to fund this the repurchase of up to $15m of sole discretion. Kopin has about program while maintaining the the firm’s common stock, financed 64.9 million shares of common financial flexibility to invest in our with available cash. stock outstanding. On 7 December, growth initiatives,” he adds. “At the Kopin plans to buy shares in the its common stock closed at $4.18 same time, we remain committed open market or through privately per share. to maintaining a strong balance negotiated transactions from time “This repurchase program repre- sheet, and want to assure share- to time over the next 24 months, sents an efficient use of capital and holders that we will implement this subject to market conditions and an additional opportunity to build repurchase program judiciously.” other factors and in compliance long-term value for our sharehold- www.kopin.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Microelectronics 13

Smartphone demand to buoy IN BRIEF Taiwanese foundries in 2011 AWSC wins Japan GaAs switch orders After seeing quarterly growth of smartphone industry, both firms are 4.4% to almost NT$2bn in third- expected to enjoy rising shipments AWSC has won orders from quarter 2010, Taiwan-based GaAs in 2011 overall, reckon market Japan for GaAs switch products, foundry WIN Semiconductors Corp sources in a report in Digitimes. as well as receiving verification saw a flat Q4 following month-on- GaAs ICs are used in handset from IDMs, reports Digitimes. month drops in sales in both Octo- power amplifiers (PAs), and one Volume shipments to new cus- ber and November due to inventory smartphone (e.g. an iPhone 4) tomers will start in Q2/2011. adjustments at some customers. contains as many as five PAs. Skyworks remains the largest Likewise, after seeing its revenue AWSC’s largest client, Skyworks client (60–70% of revenue), but grow 17.2% quarter-on-quarter to Solutions Inc of Woburn, MA, USA, this should drop to 50–55% in a record NT$543m (US$18.6m) in is expected to increase its out- 2011 as the client base expands. Q3/2010, revenue for fellow Taiwan- sourcing to the foundry partner in AWSC is likely to see sales hit by based GaAs foundry Advanced 2011 due to soaring demand for seasonality in Q1 but rebounding Wireless Semiconductor Company Apple devices. in Q2. Monthly revenue should (AWSC) drop 3.7% sequentially to The foundry is also reported to top NT$200m sometime in 2011, NT$523m in Q4 after December have secured orders from Avago yielding NT$3bn for the year. revenue fell 15.5% month-on-month Technologies. Sales generated from Buoyed by strong demand for due to seasonality. For Q1/2011, shipments to the new client will power amplifiers for smartphones, AWSC is also likely to see a 10% start contributing to revenue in AWSC saw revenue double year- sequential drop in orders. second-quarter 2011. on-year to NT$1.78bn in the first However, benefiting from the www.awsc.com.tw 11 months of 2010. continued growth expected for the www.digitimes.com www.awsc.com.tw Smartphone demand drives GaAs GaAs epi foundry VPEC sees rebound foundry WIN to boost capacity After four months of declines, Monthly output to rise from 12,000–14,000 revenue for Taiwanese GaAs epi foundry Visual Photonics Epitaxy Co to 20,000 wafers by end 2011 (VPEC) rebounded to NT$176m Taiwan-based GaAs wafer foundry ing from the overseas integrated (US$5.8m) in October, up 5.2% WIN Semiconductors Corp has device manufacturer (IDM) sector year-on-year and up 21.4% on revealed plans to ramp up will continue driving shipment September (which was hit by capacity in 2011 in anticipation of growth, he adds. clients’ inventory adjustments). brisk demand for power amplifier In addition, WIN Semiconductors Sales for November were simi- (PA) from the smartphone sector, intends to build capacity for larly high, with shipments driven reports Digitimes. gallium nitride (GaN) power by sustained demand for power WIN will start moving in new amplifier products used in base- amplifiers for smartphones. equipment in January, paving the station and satellite applications, HBT wafers for PAs still contribute way for the upcoming expansion Lee notes. Capacity for this new most to revenue. But the firm of its 6-inch GaAs wafer fabri- product segment, which would has also begun supplying wafers cation plant, the firm says. yield higher gross margins, is made using a BiHEMT process Monthly capacity is currently scheduled to come online by the (combining the advantages of 12,000–14,000 wafers, but WIN end of 2011. both HBT and pHEMT technologies expects to boost this to 16,000 by WIN Semiconductors’ revenue for products with complex circuit mid-2011 and then to 20,000 by for January through November designs) to a GaAs device vendor the end of 2011. 2010 was NT$6.42bn, up 49% since mid-2010. WIN’s total shipments for 2010 year-on-year. Q4/2010 revenue was expected are likely to be up by more than Market watchers have forecast to grow 20% sequentially, with 80% year-on-year, reckons that the firm will see sales rise gross margin rebounding to 38% Brian Lee, VP of sales & marketing. 30% in 2011, according to the (comparable with Q2’s 38.2%). Continued strong demand for Digitimes report. Q1/2011 sales should rise further. smartphones as well as outsourc- www.winfoundry.com www.vpec.com.tw

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 14 News: Microelectronics Samsung selects TriQuint’s complete 3G RF front-end for Galaxy Tab and Galaxy S

Korea’s Samsung (the world’s sec- “We are committed to utilizing our integrates an EDGE power amplifier, ond largest handset maker) has unique in-house technology low-pass filtering, and a SP8T selected the complete 3G RF front- portfolio to provide customers with antenna switch. The solution is end of TriQuint Semiconductor Inc integrated innovation and quality,” tested and certified with a leading of Hillsboro, OR, USA for its new says Tim Dunn, TriQuint’s VP of chipset provider/system integrator Samsung Galaxy Tab. This is in Mobile Devices. “In recognition of to optimize the overall system addition to Samsung choosing TriQuint’s commitment to quality, performance. TriQuint says that, TriQuint’s total 3G RF front-end Samsung awarded TriQuint with its together, the TRITIUM family and solution for its flagship smartphone Samsung Quality Award for our QUANTUM Tx module demonstrate series, Galaxy S. development efforts related to the its breadth of technologies and TriQuint claims that, compared Galaxy Tab and Galaxy S series,” capabilities in delivering an entire with other 3G WEDGE architectural he adds. 3G RF solution, from the transceiver solutions, its 3G RF front-end offers TriQuint’s TRITIUM PA Duplexer to the antenna. the lowest current consumption Module family integrates a TriQuint Semiconductor claims and highest degree of design duplexer, power amplifier, and an that its 3G RF solution is one of flexibility, scalability and miniatur- inter-stage filter that supports the the most prevalent architectures ization. The solution includes major WCDMA bands 1 chosen by leading manufacturers TriQuint’s family of WCDMA (TQM676021), 2 (TQM676022), of increasingly complex mobile TRITIUM PA Duplexer Modules in 4 (TQM676024), 5 (TQM676025) devices such as smartphones and combination with its linear WEDGE and 8 (TQM676028L). The linear tablet PCs. QUANTUM Tx Module. QUANTUM Tx Module (TQM6M9014) www.triquint.com

TriQuint recognized for excellence by Raytheon for third year At its 2010 SAS Supplier to Raytheon Excellence Award (SEA) and other recognition event, Raytheon major Company has honored defense/ RF component maker and aerospace foundry services provider contractors. TriQuint Semiconductor Inc TriQuint of Hillsboro, OR, USA for the says that third consecutive year for its module exceptional performance in capabilities, supporting Raytheon’s Space packaging and Airborne Systems (SAS) technology business. and Winning suppliers represent monolithic under 1% of SAS’ supply base. microwave Only 34 firms that supply integrated Raytheon SAS received awards. service, quality and highly reliable circuits (MMICs) continue to Winning firms were chosen by solutions for phased array radar expand its global market reach. Raytheon for meeting demanding chipsets and other critical TriQuint is a Department of quality and delivery performance, programs,” says TriQuint VP Defense (DoD)-accredited customer satisfaction as well as Tom Cordner. “TriQuint expertise ‘Trusted Foundry’ (Category 1A) total business and financial health supports service members across and is a supplier of GaAs and GaN standards during 2009. Evalua- the globe,” he adds. foundry services. It also supplies tions from Raytheon buyers and TriQuint says that its expertise in RF components for consumer retail material program managers who gallium nitride, gallium arsenide, products including mobile devices, work with TriQuint every day were surface acoustic wave and bulk wireless LAN, triple-play CATV part of the selection process. acoustic wave (SAW/BAW) tech- systems, optical network and wire- “This award honors TriQuint nologies has made it a leading less infrastructure applications. professionals’ commitment to supplier of RF system components www.triquint.com/defense

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Microelectronics 15 Anadigics’ LTE PAs used for LG’s 4G USB wireless modem

Broadband wireless and wireline averages about 30% less current communications component maker consumption compared to the pre- Anadigics Inc of Warren, NJ, USA vious generation of HELP products. says that its power amplifiers are Leakage current in shutdown mode being used by LG Electronics for its is <5A. The ALT6713 also has new VL600 USB wireless modem. integrated ‘daisy chainable’ direc- To be offered by Verizon Wireless, tional coupler with 19dB directivity, the VL600 adapts Anadigics’ and matching networks optimized ALT6713 and AWT6321 power for output power, efficiency and amplifiers (PAs) to boost perform- linearity in a 50 system. ance and reliability. Anadigics’ AWT6321 dual-band With the ever increasing world- CDMA HELP2 PA supports both wide commitment to LTE (long- the Cell (824–849MHz) and the term evolution), the VL600 is LG’s PCS (1850–1910MHz) bands. first product for Verizon’s 4G net- Supplied in a 14-pin 3mm x 5mm work, enabling significantly higher x 1mm package, it delivers low mobile data speeds with increased Anadigics’ ALT6713 and AWT6321 quiescent current (15mA) and network throughputs. Verizon power amplifiers. greater efficiency without SMPS or recently said that it will be rolling DC–DC converters. Through selec- out LTE network connections in 38 frequencies in the UMTS 700MHz table bias modes, the AWT6321 cities across the USA in the coming frequency range (specifically achieves optimal efficiency across months. The VL600 will support the 777–798MHz). different output power levels, 700MHz LTE band (as well as Three mode states maximize specifically at low- and mid-range

1900MHz/800MHz EVDO bands for power-added efficiency at several power levels (19% @ 16dBm Pout) areas without LTE coverage) and is power levels during operation of an where the PA typically operates, backward compatible with existing LTE device. The ALT6713 hence increasing handset talk-time and 3G networks. delivers exceptional efficiency at standby time. The single-band ALT6713 is the low power levels (18% @ 16dBm Both PAs are in mass production leading product in Anadigics’ port- Pout) and offers what is claimed to and are manufactured using folio of HELP4 (High-Efficiency-at- be the industry’s lowest quiescent Anadigics’ proprietary InGaP-Plus Low-Power) PAs for LTE devices. current (3mA) without the need for heterojunction bipolar transistor Supplied in a 10-pin 3mm x 3mm external voltage regulators. It technology for reliability, tempera- x 1mm package, it supports bands exceeds the stringent linearity ture stability and ruggedness. 13/14, encompassing operating needs for LTE modulations and www.anadigics.com Anadigics joins NASDAQ Global Select Market Anadigics Inc of Warren, NJ, USA are included, Qualifying for enjoyed a long-term, highly has been chosen by the NASDAQ while also the Global successful affiliation with the Stock Market to join its Global demonstrat- NASDAQ Stock Market,” says Select Market for companies s ing a Select Market chief financial officer Thomas atisfying the highest financial and message is a mark of Shields. liquidity qualifications. of high achievement, For the nine months of 2010 Established in 2006, the NASDAQ standards to (ended 2 October), Anadigics’ Global Select Market was created investors. leadership and net sales totaled $156.5m, up as a separate market classification Anadigics stature for the 58.6% year-on-year. Looking to drive greater recognition for has been a companies that ahead into 2011, the firm says world-class NASDAQ-listed firms publicly are included, that it looks forward to building on that demonstrate a commitment traded com- its success with its new product to high standards and good pany on the while also design portfolio for 3G, 4G/LTE governance. NASDAQ demonstrating and multi-mode multi-band According to NASDAQ, qualifying Stock a message of technologies, along with new for the Global Select Market is a Market design engagements with chipset mark of achievement, leadership since 1995. high standards providers and tier-1 OEMs. and stature for the companies that “We have to investors www.nasdaq.com

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 16 News: Microelectronics

IN BRIEF M/A-COM launches 3000 & 4000MHz Mitsubishi unveils highly linear RF driver amplifier WCDMA PAs for PC M/A-COM Technology Solutions Inc stage HBT driver amplifier, covering datacom terminals of Lowell, MA, USA (which makes frequencies of 250–3000MHz with Tokyo-based Mitsubishi Electric semiconductors, components, and linearity of 47dBm OIP3 and typical Corp is launching five new GaAs subassemblies for RF, microwave gain of 19.5dB. “This highly efficient power amplifiers to be used in and millimeter-wave applications) amplifier delivers high linearity and personal computer (PC) data has launched the MAAM-009560, an gain, and lower power consumption communication terminals for HBT driver amplifier for cellular and to cover a broad frequency range WCDMA cellular networks. WiMAX infrastructure applications. for infrastructure applications,” Due to the faster data transfer The driver amplifier covers a broad says Redus. speeds of cellular networks, frequency range of 250–4000MHz The lead-free surface-mount development of PC data commu- with linearity of 42dBm output IP3 plastic packages (SOT-89 for the nication terminals (such as data over a greater than 20dB input MAAM-009560 and SOIC-8EP for cards or USB terminals) has power range. Typical gain is 15dB. the MAAM-009563) are RoHS com- become extremely active, says “This versatile MAAM-009560 HBT pliant and compatible with solder Mitsubishi Electric. However, driver amplifier delivers high-linear- reflow temperatures up to 260ºC. market demand for smaller ity performance while consuming The ESD susceptibility achieves a terminals, requiring more power low power, providing a highly effi- class 2 ESD rating. output due to greater data cient driver amplifier solution for Engineering samples, sample traffic, has created the issue of cellular and WiMAX base stations,” boards and production devices for needing to limit heat accumula- says product manager Jack Redus. the MAAM-009560 and -009563 tion as much as possible. Just in December, M/A-COM Tech are available from stock. Incorporating GaAs bipolar launched the MAAM-009563 two- www.macomtech.com field-effect transistor (BiFET), Mitsubishi Electric’s new GaAs power amplifiers (PAs) achieve a Mitsubishi launches InGaP HBTs for high level of integration (in a small 3mm x 3mm x 1mm mold satellite digital radio amplifiers package) and what is claimed to be an industry-leading power-added Japan’s Mitsubishi Electric Corp is and high-gain characteristics, and efficiency (PAE) of 45% at maxi- launching two new models of the second and third stages require mum output power of 670mW indium gallium phosphide (InGaP) high-gain and high-power charac- (28.25dBm), contributing to heterojunction bipolar transistor teristics. lower power consumption and (HBT) for receiver systems in On 7 February 2011, Mitsubishi heat emission in data communi- satellite digital radios. Electric will begin shipping a new cation terminals. The amplifiers The devices have an industry- series of InGaP HBTs including the also include a built-in coupler standard 4-pin full-mold package, MGF3021AM, which features high- monitoring the output power and and are best used in the second or gain characteristics, and the an attenuator that switches the third stages of low-noise amplifiers MGF3022AM, which has high-power

power gain (Gp is 27~27.5dB, for L- to C-band (0.5–6GHz) characteristics. Collector efficiency but can be set at 13–13.5dB applications. is 32% for the MGF3021AM and with the built-in attenuator). Satellite digital audio radio service 44% for the MGF3022AM at P1dB.

The supply voltage is Vcc is 3.4V. (SDARS), common in North America Single power supply operation suits The series line-up covers the since 2001, does not require tuning application for the second or third five major frequency bands in to adapt to regional broadcasting stages of low-noise amplifiers. North America, Europe and Asia: like analog radio services, says The amplifiers operate best in BA012F1, -2, -3, -5 and -8 for Mitsubishi Electric. Car audio sys- combination with the MGF4921AM, 1920–1980MHz, 1850–1910MHz, tems therefore use SDARS to access Mitsubishi Electric’s low-noise 1710–1785MHz, 824–849MHz traffic information, entertainment gallium arsenide high-electron- and 880–915MHz (bands 1, 2, 3, programs and other information mobility transistor (HEMT), which 5 and 8), respectively. The services. Low-noise amplifiers used is already available for first-stage BA012F3 is available from June in the reception systems of these amplification (and which has the and the others from March. satellite digital radios are composed same footprint as the MGF3021AM www.MitsubishiElectric.com of two or three stages. The first and the MGF3022AM). stage requires efficient low-noise www.MitsubishiElectric.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com

18 News: Microelectronics Amalfi recruits RF Magic co-founder as CEO

Amalfi Semiconductor of Los Gatos, Most recently, he was CEO of NuTune “Amalfi has shown great success CA, USA, a fabless firm developing Singapore Pte Ltd, a joint venture in revolutionizing and improving CMOS-based RF and mixed-signal between NXP Semiconductor and the performance curve of power ICs for cellular mobile handsets, Technicolor for developing CAN amplifier technology in cellular has recruited Mark Foley as CEO. tuners for TVs and set-top boxes. handsets,” comments Foley. Foley has “proven management Previously, Foley was co-founder In 2009, Amalfi launched the first experience, knowledge and vision” of fabless firm RF Magic. As CEO, CMOS transmit module for cellular in the RF semiconductor industry he built a viable, diversified semi- handsets. The form claims that, targeted at high-volume consumer conductor firm with multiple product compared with traditional GaAs electronics. “We were looking for a lines and eight consecutive profitable transmit modules for cellular hand- combination of management qualities quarters. The firm eventually merged sets, its product offers better and industry experience that would with Entropic, where Foley took the performance and big cost savings. help grow Amalfi into a multi-million role of president & chief operating Specifically, it says that its propri- dollar company,” says board member officer and led an initial public etary AdaptiveRF silicon architecture Ken Lawler, a general partner at offering that raised $50m. has proven to increase the battery Battery Ventures. Foley has a proven Prior to RF Magic, Foley had man- life or talk time of cellular handsets track record of growing a company agement and engineering roles in while decreasing the footprint and from inception to a multimillion-dollar several RF semiconductor- and cost of front-end cellular handset high-gross-margin business, he adds. component-related firms, including designs. Products are currently ship- Foley has over 28 years experience Conexant Systems Inc, ComStream ping to cellular handset manufactur- as an entrepreneur and executive in Corp, Adams-Russell Electronics Inc ers in millions of units per month. RF semiconductors and components. and Ford Aerospace. www.amalfi.com

Tektronix Component Solutions validated as ‘Ready for IBM Technology’ for SiGe 100 & 200GHz processes

Tektronix Component Solutions of services that have been tested and less connection to IC packaging Beaverton, OR, USA (a microelec- validated for compatibility with IBM services. Tektronix Component tronics services provider formerly Foundry technologies. IBM business Solutions designs performance known as Maxtek, offering custom partners support a comprehensive ASICs for the measurement, mili- design, prototyping, manufacturing set of solutions, including RF design tary, aerospace, and high-speed and test services to equipment services, digital design services, communications markets, with a makers) says that its ASIC design libraries, mixed-signal IP cores, non- focus on signal acquisition, genera- and custom IC packaging services volatile memory, reference flows, tion, conversion, and conditioning. are now validated by IBM Corp as simulation tools, test and packag- Complementing these ASIC design ‘Ready for IBM Technology’ on ing services. The ‘Ready for IBM capabilities, Tektronix Component silicon germanium (SiGe) 5HP, 7HP, Technology’ foundry program was Solutions has over 60 engineers and 7WL and 8HP process technologies. launched in 2002, and more than 32,000ft2 of Class 10,000 manufac- “We’ve worked with IBM’s process 30 firms have since been validated. turing devoted to the development, for 15 years, designing and pack- Tektronix Component Solutions has assembly and test of high-perform- aging over 30 SiGe ASICs across more than 40 in-house ASIC design- ance custom IC packages and mod- multiple technology nodes,” notes ers developing high-complexity ules, including devices for classified president Tom Buzak. ASICs for both customers and Tek- defense programs. With an empha- ‘Ready for IBM Technology’ is a tronix instruments. It says that its sis on low-volume, high-complexity collaborative ecosystem of firms depth of experience in SiGe enables applications, the organization that enables IBM to complement its customers to reduce the risk inherent leverages experience across a broad semiconductor capabilities and pro- in complex IC development projects base of material, process and inter- vide complete foundry solutions to while achieving next-generation connect technologies to meet the clients. It helps foundry customers performance levels. From circuit and performance, reliability and quality to speed time-to-market, reduce physical design to product engi- requirements of the instrumentation, development risk, lower develop- neering and foundry relationship military, aerospace, medical and ment costs, and improve return on management, the firm says that its high-speed communications markets. investment by identifying IP, design capabilities provide a turnkey option http://component- and manufacturing solutions and for ASIC development and a seam- solutions.tektronix.com

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LEDs s POWER DEVICES s TELECOMS s PHOTOVOLTAICS s MEMS s EVATEC - THE THIN FILM POWERHOUSE www.evatecnet.com 20 News: Wide-bandgap electronics — SiC Cree’s 650V SiC Schottkys to boost data-center efficiency

Targeting the latest data-center overall efficiency due to transformer age needed for these power sup- power supply requirements, Cree losses. plies but they also further reduce Inc of Durham, NC, USA, which Recent trends in data-center energy losses (compared with manufactures silicon carbide (SiC) power architecture call for the elim- silicon devices) by eliminating power devices, has launched its ination of the 480V-to-208V con- reverse recovery losses. new line of Z-Rec 650V junction version to boost overall data-center “SiC technology is critical to barrier Schottky (JBS) diodes. efficiency. Instead of providing developing the next generation The diodes provide blocking voltage 120V AC from the 3-phase/208V of advanced, energy-efficient to 650V to accommodate recent line to neutral, server power sup- data-center power system designs changes in data-center power plies will now be expected to accept because it virtually eliminates diode architecture that industry consult- a broader universal line voltage switching losses,” says Cengiz Balkas, ants estimate will result in energy- range of 90–305V (277V plus a Cree’s VP & general manager, efficiency gains of up to 5%. Since 10% guard band) directly from the Power and RF. “Conventional silicon data centers account for nearly 10% 3-phase/480V line to neutral. This devices’ switching losses are known of the world’s annual consumption architecture eliminates the need for to be big contributors to energy of electrical power, any efficiency the step-down power transformer, inefficiency, so replacing them with gain represents a significant along with the related energy SiC devices can boost the efficiency opportunity to reduce overall power losses and expense. of the power factor correction stage consumption, says Cree. Optimal operation of server power of the power supply by up to 2%, Conventional switch-mode power supplies with a higher input voltage resulting in even greater overall supplies typically have an input range of 90–305V requires power efficiency improvement than with voltage range of 90–264V, support- components such as Schottky architectural changes alone,” he adds. ing various AC input sources world- diodes that have an extended max- The initial products in the wide. In existing data-center power imum blocking voltage of 650V. C3DXX065A Series 650V Z-Rec architectures, 3-phase/480V power Cree says that its new 650V-rated Schottky diode family include 4, 6, is supplied from the local utility. devices provide a suitable solution 8 and 10A versions in TO-220-2 This is converted to 3-phase/208V for designers of state-of-the-art packages. All devices are rated for by a power transformer and then power supplies for data-center operation from –55°C to +175°C. further conditioned to provide input servers and communications equip- The devices are fully qualified and power to the server power supply. ment. The Z-Rec SiC diodes not released for production use. This conversion step reduces only feature the 650V blocking volt- www.cree.com/power

NASA SBIR award for GeneSiC’s power management project for Venus explorers

GeneSiC Semiconductor Inc of (500ºC surface temperatures). the potential to revolutionize critical Dulles, VA, USA, which develops The SiC MIDSJT devices will be used aerospace and geothermal oil- silicon carbide (SiC) devices for to construct motor control power drilling hardware requiring ambient high-temperature, high-power, and modules for direct integration with temperatures in excess of 200ºC,” ultra-high-voltage applications, Venus exploration rovers. Sundaresan notes. “These appli- says that its project ‘Integrated SiC “This project will enable GeneSiC cation areas are currently limited Super Junction Transistor-Diode to develop industry-leading SiC- by the poor high-temperature Devices for high-power motor con- based power management tech- performance of contemporary trol modules operating at 500ºC’ nologies through its innovative silicon and even SiC-based device has been selected by the US device and packaging solutions,” technologies such as JFETs and National Aeronautics and Space says the firm’s director of technol- MOSFETs,” he adds. Administration (NASA) for a Phase I ogy Dr Siddarth Sundaresan. “The GeneSiC says that it continues to SBIR award. SiC MIDSJT devices targeted in this rapidly enhance the equipment and The SBIR project is focused on program will allow kiloWatt-level personnel infrastructure at its facility. developing monolithic integrated power to be handled with digital The firm is hiring personnel experi- SiC junction barrier Schottky (JBS) precision at temperatures as high enced in compound semiconductor diode-Super Junction Transistor as 500ºC,” he adds. device fabrication, semiconductor (MIDSJT) devices optimized for “In addition to outer space appli- testing and detector designs. operation under Venus-like ambients cations, this novel technology has www.genesicsemi.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Wide-bandgap electronics — SiC 21 DOE grants $3.9m for SiC HEV charger development Arkansas researchers partner with Cree and Toyota

A $3.9m award from the US Under Mantooth’s direction, the the nation’s power grid as electric Department of Energy (DOE) aims Arkansas researchers will develop vehicles become prevalent, while to allow electrical engineering basic semiconductor device models helping to decrease the nation’s researchers at the University of to enable other researchers to design carbon footprint. Equally as impor- Arkansas to continue contributing integrated circuitry. The work will tant, the engineering and manufac- to the development of a compact help engineers simulate circuits on turing jobs created by this award and highly efficient silicon carbide computers to verify functionality will remain in America,” he adds. (SiC) battery charger for plug-in before committing to fabrication. “Cree has been leading the devel- hybrid electric vehicles (HEVs). As part of the overall project, the opment of the silicon carbide power Benefits of the project extend researchers will also design key components at the heart of this beyond vehicles into other areas, components of the charging circuitry. proposed system,” says John Pal- such as wind and solar power, and Since 2009, the DOE has allocated mour, Cree’s chief technology offi- could also lead to reduced energy nearly $350m to universities, small cer for power and radio frequency. consumption. and large businesses, national labs “We are hopeful that this demon- The grant is part of the DOE’s and non-profit groups to support stration will lead to the use of Advanced Research Projects Agency- research that can change how the US silicon carbide power devices in the Energy (ARPA-E) program and will generates, stores and uses energy. electric motor drives themselves, benefit a collaborative partnership As part of the American Recovery creating even more efficiency gains that includes five private and public and Reinvestment Act of 2009, for hybrid vehicles.” entities: project leader Arkansas the funding is intended to create The National Center for Reliable Power Electronics International Inc jobs and foster economic growth. Electric Power Transmission is one (APEI) of Fayetteville, AK; its private “These innovative ideas will play a of just a few university-based partner the National Center for critical role in our energy security research centers chosen by the DOE Reliable Electric Power Transmission and economic growth,” says US to investigate electronic systems to (at the University of Arkansas); Secretary of Energy Steven Chu. make the USA’s power grid more Oak Ridge National Laboratory “It is now more important than reliable and efficient. Five years (ORNL); Cree Inc; and Toyota ever to invest in a new, clean ago, the DOE funded the center Motor Engineering & Manufacturing energy economy,” he adds. because of the university’s research North America Inc. “The award was highly competitive, expertise in advanced power elec- “This effort will lead to break- and we look forward to delivering tronics and longtime investigation throughs in efficiency, size and on the challenges in this ground- of silicon carbide. Electrical weight reduction, and overall breaking project,” says Serdar Yonak, engineering researchers at the improved vehicle performance,” Toyota’s US power electronics R&D university have developed and believes Department of Electrical manager. packaged SiC systems for more Engineering professor Alan Mantooth, “This technology will help reduce than a decade and recently won an director of the National Center for energy consumption in everyday R&D 100 Award, in collaboration Reliable Electric Power Transmission applications, such as personal vehi- with APEI, for the first 250ºC- (who holds the 21st Century cles,” says APEI’s director of busi- capable power module rated at Endowed Chair in Mixed-Signal IC ness development Ty McNutt. “In 1200V and 150A. Design and CAD). addition, it will reduce the strain on www.engr.uark.edu

SDK’s new ‘PEGASUS’ business plan targets SiC epi

Following its ‘Passion Extension’ As well as expanding business in stable supply of high-quality SiC program of structural reform in high-purity gases for semiconductor epiwafers, meeting the needs for 2009–2010 in response to the processing and commercializing medium- to high-voltage appli- downturn of second-half 2008, large-diameter GaN epiwafers cations. Japan’s Showa Denko K.K. (SDK) based on its proprietary Hybrid PPD SDK says that, to accelerate the has a new medium-term business technology for LED manufacturing, launch of such new businesses, it plan ‘PEGASUS’ for 2011–2015 new growth sectors targeted by SDK will use partnerships as well as targeting demand for components, include silicon carbide epiwafers for mergers & acquisitions to advance materials and solutions in ‘Electronics’ power devices. its business strategies and R&D. and ‘Energy/Environment’. The aim is to rapidly realize a www.sdk.co.jp www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 22 News: Wide-bandgap electronics — SiC IN BRIEF Micross to develop hermetic Warwick receives packaging for SemiSouth’s SiC 1800ºC furnace for SiC power devices JFETs and Schottkys up to 260ºC Professor Phil Mawby at the UK’s Collaboration targets hi-rel military, University of Warwick has taken aerospace and down-hole drilling markets delivery of a furnace that can reach 1800ºC (500ºC higher Micross Components Inc, which order to promote SiC product sales than traditional silicon furnaces), provides specialized products & synergy in the worldwide market. for use in fabricating power services and distributed compo- Micross plans to offer screening of devices based on silicon carbide . nents for the electronics industry, the JFETs and Schottky diodes to “It will allow us to really push and SemiSouth Laboratories Inc of military and space specifications the boundaries of what we know Starkville, MS, USA have announced such as MIL-PRF-19500 equivalent about SiC and how it functions a collaborative effort to expand initially and eventually offering under such intense temperatures,” SemiSouth’s line of silicon carbide standard certified MIL-PRF-19500 says Mawby. “This will allow us (SiC) power JFETs and Schottky products in the future. The initial as a university to make great diodes. Micross SiC product offering will strides in developing the material Founded in 2000 as a spin-out include: four 1200V and one 1700V for use in energy management from Mississippi State University, JFETs with 1250ºC continuous max and hopefully find a means of SemiSouth is a privately held firm drain current capability of 4–50A using the material to run electrical that designs and manufactures and low RDSon; and four 1200V energy in a much more efficient high-voltage SiC power devices and Schottky diodes capable of 5–30A manner,” he adds. electronics for high-efficiency, continuous forward current. “SiC is the next-generation harsh-environment power manage- The range for operating junction

semiconducting material,” Mawby ment and conversion in applications temperature (TJ) is –55ºC to +200ºC, continues. “It is very similar to ranging from 3kW to 100kW (with with special screening up to 260ºC silicon but a much smaller piece products in development to serve upon request. of the material can perform the applications up to 1MW). With a “This is a significant product addi- same functionality, meaning 10,000ft2 cleanroom and more tion to our military & aerospace space and weight are saved, and than 70 staff at its Starkville products family that will better less heat is lost.” headquarters, products include serve the satellite customer with The new furnace has been 1200V and 1700V transistors state-of-the-art SiC technology for funded by the Science City as well as high-voltage diodes and high-power FETs and diodes,” says Research Alliance (SCRA) Energy power modules. Jeff Kendziorski, Micross Components’ Efficiency Project, which is part of Micross represents a single source director of marketing & new product a larger investment by Advantage for specialty electronics that can development. West Midlands and the European provide the design, manufacture, SemiSouth will “With our Regional Development Fund logistics and die distribution provide select Hermetic pack- (ERDF) in the research infra- processes needed to realize and JFET and diode aging offering, structure of the UK’s West Mid- support an application from start to this also lands region. SCRA unites the finish. Micross has been serving die to Micross expands the University of Birmingham and military & aerospace customers for for packaging product use for the University of Warwick in a more than 30 years and has been extreme tem- strategic research partnership a certified QML supplier for more peratures seen in deep down-hole formed under the Birmingham than 14 years with over 1600 drilling of up to 260ºC,” he adds. Science City initiative (a region- DSCC-listed products. “We are continuing to search for wide partnership of public sector, SemiSouth will provide select ways to sell our SiC power electron- businesses and the research base). JFET and diode die to Micross for ics products in to hi-rel and mil-aero The £10.5m Energy Efficiency packaging and test in metal customers, and are pleased to project has already invested hermetic packages. Micross will be working with a well-known £1.8m in a cleanroom at the Uni- then offer these value-added hi-reliability products vendor such versity of Warwick that has the hermetically packaged versions, as Micross,” says SemiSouth’s capability to manufacture the targeted at the military, aerospace chief technology officer & VP of complete SiC device. and down-hole drilling markets. business development Jeff Casady. www2.warwick.ac.uk The firms aim to draw on each www.semisouth.com other’s respective strengths in www.microssaustin.com/siliconcarbide

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Wide-bandgap electronics — GaN 23 NEULAND project aims to halve energy loss for renewables, telecoms and lighting €4.7m from Germany's BMBF funds 3-year SiC and GaN-on-Si project Six partners from the semiconductor the losses in feeding electricity into of the material for power appli- and solar industries (Aixtron, the grid (e.g. in photovoltaic invert- cations began in 2006. NEULAND Azzurro Semiconductors, MicroGaN, ers) by as much as 50% — without aims to reveal the applications for Infineon Technologies, SiCrystal, significantly increasing system cost which GaN devices live up to or SMA Solar Technology) are — by using devices based on silicon outperform existing SiC devices in partnering in the research project carbide (SiC) and gallium nitride on terms of reliability, ease of use, and ‘NEULAND’ to explore new avenues silicon (GaN-on-Si). cost. This will pave the way for for the efficient use of electricity The new devices are also to be introducing the energy-efficiency from renewable sources. used in future in switched-mode benefits of reduced losses through- Headed by Infineon, NEULAND will power supplies for desktop and out the consumer electronics spec- run until mid-2013. Of the project’s laptop PCs, for flat-screen TVs, trum, the project partners believe. €4.7m total budget, 52.6% (€2.47m) servers and telecom systems, with The project consortium brings will come from Germany’s Federal a view to likewise halving energy together expertise in SiC and GaN Ministry of Education and Research loss in these applications. across a wide area of the value (BMBF) under the government’s On the market for about ten years chain. Aixtron is represented as High-Tech Strategy (‘Information and now, SiC Schottky diodes enable a provider of semiconductor Communications Technology 2020’, significantly reduced losses in manufacturing equipment, and ICT 2020 program) as part of the call current and voltage conversion in SiCrystal and Azzurro as wafer for proposals on ‘Power Electronics switched-mode power supplies. manufacturers. Device know-how for Energy Efficiency Enhancement’. They are used primarily in switched- is being supplied by MicroGaN and Focusing on innovative power mode power supplies for PCs or TVs, Infineon, and experience in sys- devices with high energy efficiency in solar inverters and motor drives. tems engineering for photovoltaic and cost effectiveness based on At present, GaN material is used applications comes from SMA Solar wide-bandgap compound semicon- mainly in white light-emitting Technology. ductors, NEULAND aims to reduce diodes. Studies into the suitability www.infineon.com

TriQuint wins $17.5m TITLE III GaN manufacturing development contract for high-power, high-frequency

The US Air Force Research Labora- The new GaN program is divided its facility in Richardson, TX. tory (AFRL) has awarded RF com- into three phases, with goals and TriQuint has conducted GaN ponent maker and foundry services assessment criteria at each mile- research and product development provider TriQuint Semiconductor stone. for both defense and civilian appli- Inc of Hillsboro, OR, USA a Defense The primary first-phase goal is to cations since 1999. In addition to its Production Act Title III gallium make a baseline assessment of military design and manufacturing nitride (GaN) manufacturing devel- manufacturing readiness. work, it has launched GaN amplifiers opment contract worth $17.5m. In the second phase, TriQuint will for wireless communications and a The overall goal of the contract is work to improve and refine the range of other applications over to increase yield, lower costs and production process to reach a the last three years. TriQuint was improve time-to-market cycles for manufacturing readiness level (MRL) the first to offer high-frequency, defense and commercial GaN integ- of 8 in developing its monolithic high-power commercial GaN foundry rated circuits on 100mm wafers in microwave integrated circuits services (0.25m GaN on SiC) in high-power, high-frequency device (MMICs). 2008. manufacturing. TriQuint says that In the final phase (expected to “This program will take the tech- the contract was awarded on the conclude in 2013), the program nology from the early stages of basis of its previous success devel- aims to demonstrate MMIC fabri- production to a mature manufac- oping new GaN technologies and cation that meets full performance, turing process enabling next-gen- products for US Defense Advanced cost and capacity goals. TriQuint is eration systems,” comments Research Projects Agency (DARPA) the program's prime contractor and TriQuint vice president Tom Cordner. technology development programs. all the work is to be performed at www.triquint.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 24 News: Wide-bandgap electronics — GaN Powdec unveils 600V GaN Schottky diode Power losses halved on low-cost sapphire substrates Powdec K.K. of Oyama City, Japan, It has been said in the past that which produces gallium nitride creating a GaN diode with a vertical (GaN) wafers and devices, has used structure (like a silicon diode) GaN to develop a Schottky diode would not be possible unless costly with a high breakdown voltage of GaN substrates are used, comments more than 600V. Powdec. In addition to the vertical Schottky Sapphire and silicon wafers are diodes being fabricated on a low- lower cost than GaN wafers but, cost, large-diameter sapphire up until now, their use has yielded wafer, a proprietary method was lower-quality GaN crystal growth developed where the sapphire Figure 1. GaN vertical Schottky diode on top, reducing the voltage limits substate is removed, improving after separation from substrate. of the diode. the device’s thermal conductance. However, Powdec says that it has The GaN diode’s on-resistance is 3. The vertical structure does not developed an innovative epitaxial more than 100 times smaller than suffer current collapse, as in lateral lateral overgrowth (ELO) technol- existing silicon power diodes, devices. ogy and realized very high-quality reducing power losses by more than 4. On-resistance is more than 100 GaN crystal growth on sapphire 50%, it is reckoned. Powdec plans times smaller than that in silicon wafers with dislocation numbers volume shipments by 2012. diodes, providing very low power that are several hundred times The new GaN Schottky diode can losses. less than those produced by be used in the power conditioning 5. The diode’s thickness is conventional growth technologies, of solar power systems and motor extremely thin at about 20m it is claimed. drive circuits, as well as in inverter (see Figure 2), giving very low While Powdec’s new Schottky and power factor correction (PFC) conduction resistance and thermal diode has achieved a breakdown circuits, which are key in the power resistance. This enables low voltage of 620V, the firm says that supply unit of servers and other power losses and higher operating its proprietary technology also equipment. Use of the GaN diodes temperatures as well as reduced allows the possibility of creating can dramatically lower DC/AC system size (since fewer thermal 1200V diodes. Powdec says that it conversion power losses, claims components are needed). has been granted patents for the Powdec. 6. The GaN Schottky diode provides technology. The firm adds that, to The replacement of existing silicon high-speed performance, so high- accelerate market adoption of the power diodes by these GaN power frequency operation is possible, low-power GaN devices, it is diodes can also result in a 15–30% allowing a reduction in capacitors actively expanding its partnerships

cut in emitted CO2, says the firm. and inductors and hence leading to worldwide. Powdec reckons that its products smaller and lower-cost systems. www.powdec.co.jp/e will enable accelerated adoption of smart grids throughout society (where power and information net- Conventional technology: Powdec’s technology: substrate intact substrate removed works are tied together, and where individually generated electricity from solar power etc can be smoothly connected to the main n– GaN n– GaN 20m power grid). n+ GaN n+ GaN Features of the Schottky diodes include: 1. Large-diameter sapphire sub-  strates allow devices to be made at 100 m very low cost (as for LEDs). GaN substrate 2. At 620V, a leakage current of less than 1mA/cm2 has been achieved. So, for a 10A diode, leakage current will be on the order of 20A (one-tenth that of other Figure 2. Comparison of device structure using conventional technology and GaN devices). Powdec’s technology.

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com High Power Broadband Transmitting Your Power, Clean & Simple. VGG VDD

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WWW.TECDIA.COM 26 News: Materials and processing equipment Riber sells three production reactors to Asia for RFICs

Riber S.A. of Bezons, France, which processing capacity of 1200 wafers firm’s production systems. Since manufactures MBE systems as well per month. The reactors will be used the beginning of 2010, Riber has as evaporation sources and effusion primarily to make radio-frequency booked a total of five orders for cells, has sold three production communication microelectronic production reactors for delivery in systems to two Asian organizations devices, enabling the users to sig- Europe and Asia. working in compound semiconductor nificantly increase their production The firm says that the latest fields. capabilities. commercial orders confirm the The orders consist of two MBE6000 Riber says the orders illustrate the growth in its sales in emerging systems, with a processing capacity strong upturn in the compound countries, as well as highlighting its of more than 1500 wafers per month, semiconductor industry, as well as key position in the Asian market. and one MBE49 system, with a the strong level of interest in the www.riber.com

AXT upgraded to NASDAQ Global Select Market

AXT Inc of Fremont, CA, USA, which As one of three market tiers at Global Select Market is significant manufactures gallium arsenide, NASDAQ, the Global Select Market validation of the company and our indium phosphide and germanium recognizes the highest financial board’s dedication to corporate substrates and raw materials, says listing standards in the world, with governance practices of the highest that the NASDAQ Stock Market has measures including market value, standard and integrity,” reckons upgraded the listing of its securities liquidity and earnings, according to CEO Dr Morris S. Young. “Inclusion from the NASDAQ Global Market to NASDAQ, and qualifying for it is a in this market should increase our the NASDAQ Global Select Market, mark of achievement, leadership, visibility in the capital markets and effective 3 January. The firm’s credibility and high ethical standards further broaden our shareholder securities continue to trade under for companies. base,” he adds. the symbol ‘AXTI’. “Having qualified for the NASDAQ www.axt.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Materials and processing equipment 27

INL orders MBE reactor research IN BRIEF Riber S.A. of Bezons, France has energy, health, biology, industrial Riber sells reactor sold a Compact 21 research MBE control, defense and the environ- for Indian research system to the Lyon Institute of ment. Nanotechnology (Institut des Nano- Riber says that the Compact 21 Riber has sold a Compact21 technologies de Lyon, INL). system sold to INL offers high mod- reactor to a “leading research The new system will supplement ularity and flexibility, making it pos- institute based in India”, enabling existing Riber MBE systems at INL sible to deposit materials with both the lab to ramp up its research and contribute to expanding the its low and high evaporation tempera- capacities for the growth of new research capabilities for developing tures simultaneously (which is par- ultra-thin-film electronic structures. micro- and optoelectronic compo- ticularly suited to growing crystalline The system was selected for its nents, specifically the use of silicon oxides on silicon). Drawing on flexibility and adaptability, allow- as a ‘universal’ substrate. The Riber’s technical experience and ing it to be tailored for research project is being financed with funds INL’s oxide growth expertise, the on the most complex structures. from a State-Region planning reactor is being integrated into the Riber’s portfolio of components contract. other Riber systems at INL, which also contributed to the institute’s INL is a mixed research unit, over- are devoted to growing III-V semi- decision to acquire all of the seen by the French national center conductor-based nanostructures. firm’s technology. for scientific research (CNRS), Riber says that, in addition to con- Riber says that, in addition to Ecole Centrale de Lyon, INSA de Lyon firming the commercial success of confirming the commercial suc- and Université Lyon 1. Its mission is the Compact 21 range (the world’s cess of the Compact 21 range to develop research, from materials best-selling MBE research system), (the world’s best-selling MBE to systems, paving the way for the the new order from a leading research system), the order emergence of groundbreaking semiconductor research laboratory confirms the strong development technical fields. Applications cover highlights Riber’s expertise in of Riber’s sales in India, where the main economic sectors, from nanotechnologies. the semiconductor industry is the semiconductor, microelectronic http://inl.ec-lyon.fr growing rapidly. and photonic industries to telecoms, www.riber.com

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 28 News: Materials and processing equipment

IN BRIEF Chinese thin-film PV equipment firm Aixtron completes APOLLO enters LED epi conversion into In third-quarter 2010 Aixtron turnkey solutions for the production European company received an order for a CRIUS of amorphous silicon thin-film pho- Aixtron AG of Herzogenrath, Ger- 31x2”-wafer MOCVD reactor from tovoltaic modules. The new LED- many has completed its conversion new customer APOLLO Precision Ltd related development should allow from a German company (Aktien- of QuanZhou, FuJian Province, China. the group to enhance its earning gesellschaft) into a European Delivered in December, the system capacity and diversify market risk. company (Societas Europaea, SE) will be used for production of LED “We are making a new investment with entry into the commercial back-light units (BLUs). The local to enter the LED epitaxy business, register of the Aachen municipal Aixtron support team is commis- and the CRIUS reactor will form the court as Aixtron SE, under which sioning it in a dedicated facility at basis of our growth plans,” says name it will operate and report. the firm’s China production plant. APOLLO’s chief operating officer An SE is a public limited-liability As an investment holding company professor ShuLin Wang. “We feel company under European law. incorporated in 2008 and operating confident with the CCS CRIUS Aixtron says the supranational as a subsidiary of RBI Holdings Ltd, system — one of the world’s most legal form reflects its European APOLLO Precision Ltd is, through its productive MOCVD systems for and international orientation and subsidiaries, a manufacturer and production of GaN-based LEDs.” is a natural step with respect to its seller of specialized equipment and www.apollosolar.com.hk/en global operations and business development. Nearly half of the firm’s employees work abroad HUGA orders multiple Aixtron G5 MOCVD and more than 90% of revenue reactors for blue HB-LED production is generated outside Germany. The conversion was approved by Aixtron has received a repeat highest confidence with the AIX a large majority of shareholders at order from existing customer G5 HT platforms on order. We plan the 2010 Annual General Meeting HUGA Optotech Inc for a double- to base our complete current in May. Over 94% of the repre- digit number of AIX G5 HT 14x4” expansion around the G5.” sented share capital approved configuration MOCVD systems. Founded in 1998, HUGA first the Executive and Supervisory After delivery between Q4/2010 achieved mass-production of its Board’s proposal for conversion. and Q1/2011, the systems will be own blue LED chip product in Negotiations with the staff rep- used for producing GaN-based 2001. It now also manufactures resentatives concerning future materials for ultra-high-brightness and develops other GaN compo- staff participation in Aixtron SE (UHB) blue LEDs. The local Aixtron nents such as laser diodes and UV were concluded within the statu- support team in Taiwan is com- emitters as well as GaAs-based tory period of six months. missioning the reactors in HUGA’s devices for communications. The firm’s headquarters will newly expanded facility in The G5 HT is Aixtron’s flagship remain in Herzogenrath in the Taichung Science Park, Taiwan. MOCVD system and is used for the Aachen region. The two-tier sys- “HUGA Optotech has been partic- most demanding of compound tem consisting of a Supervisory ularly impressed with the overall semiconductor material production Board and an Executive Board performance of our first Aixtron tasks. The latest and most also remains. All members of the G5 HT MOCVD system,” says capable evolution of the Aixtron boards retain their original func- president C.N. Huang. “Factors Planetary Reactor series, the G5 tions in the corresponding boards that have influenced our decision has been optimized to meet all in the SE. No further changes are centre on the excellent perform- requirements for advanced planned within Aixtron Group in ance we have seen from the G5 production with respect to conjunction with the conversion. Planetary system, plus its capabil- performance, cost of ownership Shareholders of Aixtron AG auto- ity to perform continuous runs and yield. The designation HT matically become shareholders without baking or cleaning. This (high temperature) refers to the of Aixtron SE, and their share- has been achieved as smoothly particular application to the manu- holders’ rights will not be and efficiently as we could wish," facture of wide-bandgap materials affected by the conversion. There he adds. “These and other positive including but not restricted to are also no changes to the man- factors have reassured HUGA UHB LEDs. ner or content of financial report- Optotech management and engi- www.hugaopto.com.tw ing as a result of the conversion. neers alike that they can have the www.aixtron.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Materials and processing equipment 29 Veeco ships 200th TurboDisc K465i MOCVD system

Veeco Instruments says it has ductor and head of Veeco’s MOCVD proven K465i extends its lead in shipped its 200th TurboDisc K465i operations. “We are proud of Veeco’s capital efficiency (the number of MOCVD system to a “leading LED ability to ramp production of the good wafers per day for each capital manufacturer located in Asia”. K465i and support our global cus- dollar) for high-volume LED makers. “Since its introduction to the market tomers to meet the strong demand The K465i provides ease-of-tuning in January 2010, the K465i has for tools as LED adoption accelerates for fast process optimization on become the market-leading MOCVD for backlighting and lighting appli- wafer sizes up to 8 inches and system for high-volume manufac- cations,” he adds. “This is a signifi- fast tool recovery time after main- turing of LEDs,” reckons Bill Miller, cant milestone for our business.” tenance, the firm adds. executive VP, Compound Semicon- Veeco says that the production- www.veeco.com

Veeco appoints GT Solar’s CEO to board of directors Epitaxial deposition and process “Tom brings a broad, global tech- develops and manufactures tech- equipment maker Veeco Instruments nology background to Veeco’s nically advanced synthetic textiles. Inc of Plainview, NY, USA says that board that includes experience in From 1995 to 2001, he was CEO of Thomas Gutierrez has been multi-national organizations and Invensys Power Systems, a $3bn appointed to its board of directors. clean technology,” says CEO John firm in power control and energy Gutierrez is currently president, R. Peeler. “He will quickly become storage systems and services for CEO & director of GT Solar Inter- a valued advisor and partner in industrial applications. Gutierrez national Inc of Merrimack, NH, USA, Veeco’s future growth,” he believes. also has extensive international which provides polysilicon produc- Prior to joining GT Solar in 2009, experience in product development, tion technology as well as sapphire from 2001 to 2008 Gutierrez was manufacturing, marketing and and silicon crystalline growth sys- CEO and a member of the board of sales. He received his BSc. degree tems and materials for the solar, directors of Xerium Technologies in Electrical Engineering from LED and other specialty markets. Inc, a multinational company that Florida Institute of Technology.

China’s ULED receives six Aixtron IN BRIEF CRIUS systems for GaN LEDs Aqualite orders six CRIUS systems Deposition equipment maker Dr Tzu-Chi Wen. “Aixtron CRIUS Aixtron SE of Aachen-Herzogenrath, reactors have been selected due to Aixtron says that in Q4/2010 its Germany has announced an order their high local support team in China for six 31x2”-wafer configuration Our strategy is performance installed six CRIUS 31x2”-wafer CRIUS deposition systems from new to integrate and excellent configuration MOCVD systems at customer United LED Shan Dong LED-based productivity. existing customer Aqualite Co Ltd Corp (ULED) of Shandong, China. It will provide for the production of high-power Following installation and commis- technology and us with a very LEDs. sioning of the systems in ULED’s IC industry rapid start-up “We have been very satisfied dedicated new production plant in resources to so that we with our three existing reactors third-quarter 2010, they will be produce LED can be as they are perfectly matching used for the production of GaN producing our requirements. However, we LEDs for back-lighting units (BLU) chips for lighting our own LED now have to increase our pro- and general lighting applications. products at lowest risk,” he adds. duction capacity for high-power ULED is a joint venture between “This is the first set of MOCVD LEDs,” says Aqualite’s CEO Dr UMC, the world’s second largest equipment in this new facility and James Dong. “Our systems have silicon wafer foundry, and high- we have been with ULED every delivered on their performance brightness LED chip maker Epistar, step of the way to ensure smooth promise — Aixtron engineering both of Taiwan. “Our strategy is to installation and commissioning,” means they have superior speci- integrate LED-based technology and says Dr Christian Geng, Aixtron VP fication on all counts but particu- IC industry resources to produce of Greater China & general manager larly in uniformity and yield.” LED chips for lighting applications,” of Aixtron Taiwan Co Ltd. www.aqualite-led.com says ULED’s Epi Division director www.aixtron.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 30 News: Materials and processing equipment LayTec adds color measurement capability to SolR thin-film photovoltaic monitoring tool

LayTec GmbH of Berlin, Germany (which provides in-situ optical metrology systems for thin-film processes) says that, in addition to measuring the precise film thick- ness of all layers throughout the solar cell manufacturing process, its SolR system can now monitor the following photovoltaic (PV) cell features in-line: texture and surface roughness and — in the case of transparent conducting oxide (TCO) — conductivity. The new feature now allows determination of the precise color value of the layer surface. LayTec says that, after a deposi- tion step, it is often possible to anticipate by visual inspection if the coating was performed successfully and if the solar module will meet CIGS reflectance spectrum and CIEXYZ color space. the color spaces. But this process can now be objectified using the diselenide (CIGS) thin-film PV cell ●LayTec says that (since October) SolR. The real-time analysis soft- and the representation of the Hyun Lee is a new team member in ware transforms the reflection typical grey-bluish color in the its R&D department, responsible for spectra into a color space model. CIEXYZ color space. pre-production series and replen- Available models are RGB, CIEXYZ In contrast to human visual ishment planning for the firm’s PV or CIELAB color spaces. In either inspection, color measurement can section. He graduated as an engineer model the color is represented by a be performed in narrow spaces and in physical techniques at the Rhein- data triple. Slight variations in sur- in a variety of atmospheres and Main University of Applied Sciences, face color can indicate deviations in vacuum, says LayTec. The new from which he already has experi- stoichiometry or other detrimental feature can hence lead to a new ence in optics and sensor systems. effects. The Figure shows the level of quality control in solar cell In addition, a position is currently

reflectance spectrum of a CuInSe2 production, the firm claims. open in the firm’s PV section for an absorber layer in a copper indium www.laytec.de experimental physicist.

DGKK Workshop discusses opto, photonics, solar

In conjunction with its 25th The annual two-day symposium Electromagnetic Theory (Institut anniversary, the Epitaxy Work for ‘epi specialists’ focused on the für Theoretische Elektrotechnik) at Group of the German Society for latest developments and results in RWTH Aachen. Crystal Growth (Deutsche optoelectronics, e.g. LEDs for the “Topics addressed in the workshop Gesellschaft für Kristallwachstum lighting industry, nano-technology, represent high added value for und Kristallzüchtung e.V., or DGKK) photonics and solar technology. Germany,” says professor Michael held a workshop ‘Epitaxy of III/V On both days, junior scientists Heuken, VP of R&D at Aixtron and Semiconductors’ on 9–10 December presented their ideas to the scien- adjunct professor at RWTH Aachen in the SuperC building at RWTH tific community for the first time. University, who has headed the Aachen University. The event was The workshop also serves as a DGKK’s Epitaxy Work Group for co-organized by RWTH Aachen national forum where doctoral can- many years. “Companies such as (Rheinisch-Westfälische Technische didates for the first time have the Osram, Philips, Infineon and many Hochschule Aachen) and deposition opportunity to demonstrate their Asian companies such as Samsung equipment maker Aixtron AG of knowledge to a group of renowned and Nichia use the technology.” Aachen-Herzogenrath, Germany experts, notes Dr Holger Kalisch, www.gan.rwth-aachen.de/dgkk (spun off from RWTH in 1983). senior engineer at the Chair of www.aixtron.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Materials and processing equipment 31 LayTec wins technology transfer award ‘Science Creates Jobs 2010’

LayTec GmbH of Berlin, Germany Since its launch, EpiCurveTT has (which provides in-situ optical generated revenue of over €10m. metrology systems for thin-film The number of staff at LayTec has processes) and its research partners risen from 20 in 2005 to more than Otto-von-Guericke University of 60 in 2010. The firm says that Magdeburg and Ferdinand-Braun- research partners also benefit from Institute in Berlin have won Ger- the development: due to the patent many’s ‘Science Creates Jobs 2010’ license agreement, the University award, which honors the most of Magdeburg receives 2.5% of all successful technology transfer from EpiCurveTT revenue annually. academia to small- & medium- “The jury was convinced by the sized enterprises. fact that the partners were not dis- The €20,000 prize was awarded couraged by the initial scepticism for the third time by the Technical of the LED industry and continued University of Chemitz and Deutsche intensive and goal-oriented devel- Postbank AG under the patronage opment of the sensor that fulfills of the German Federal Minister of industrial demands and meets Economics and Technology. Of the numerous challenges occuring 35 German applicants, LayTec’s during the growth of compound EpiCurveTT development project semiconductors,” commented jury was recognized by the jury as the member professor Urs Fueglistaller most relevant technlogical break- (director of the Swiss Research through and as an economic success. Institute of Small Business and In 2005, in a prototype tool devel- Entrepreneurship in St. Gallen) at oped by professor Alois Krost and the award ceremony. co-workers at the University of In addition to enabling the brilliant Magdeburg, LayTec recognized a picture quality of the newest LED- method with the potential to revo- backlit flat-panel displays, LayTec lutionize the production of LEDs. reckons that in a few years, due to “Despite some scepticism in the LED their energy efficiency, LEDs will industry at that time, we further completely replace the currently developed the method of in-situ still modern low-energy light bulbs. wafer curvature measurement to The firm says that its EpiCurveTT make it suitable for industrial appli- helps to produce affordable, bright cations,” says president & founder LEDs with a precise color spectrum. Dr Thomas Zettler. “Just two years www.wissenschafftarbeit.de later, in cooperation with the Ferdinand- Braun- Institute, we suc- cessfully conducted field tests to adapt our new in-situ metrology system to industrial require- Professor Klaus-Jürgen Matthes (left) und Deutsche Postbank’s ments.” Dr Mario Daberkow (right) congratulate Zettler. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 32 News: Materials and processing equipment Altatech launches system for inspecting wafer edges and controlling multi-layer overlap

At the SEMICON Japan 2010 trade accurately classify show (1–3 December), Altatech defects in today’s Semiconductor S.A. of Montbonnot, production near Grenoble, France is launching environments.” its high-throughput AltaSight EyeEdge is EyeEdge inspection system, which designed to can detect, identify and generate accommodate an images of defects as small as 2m optional fourth along the edges of 300mm wafers, optical sensor to including compound semiconductor, analyze a pro- silicon, silicon-on-insulator (SOI), grammable crown quartz and transparent substrates. area on a wafer’s Applications include inspecting bare front-side edge. or patterned wafers, through-silicon While maintaining vias (TSVs) used in 3D semicon- the system’s pro- ductor integration, and thin-film cessing accuracy layer overlap at the extreme edges and high through- (the crown or apex) of wafers. put, the additional Available as either a stand-alone sensor enables tool or as a modular, fully retro- EyeEdge to meas- fitable enhancement on Altatech’s ure layer-overlap- 300mm AltaSight platform, the Altatech’s new EyeEdge inspection system. ping control, EyeEdge system maximizes device providing what is yield and profitability by finding and for single-pass inspection. Using claimed to be a unique high-speed, accurately classifying defects that Altatech’s proprietary DeepSight low-cost solution to control insulat- other inspection schemes (including technology, these sensors collect ing, barrier and seed layers, copper laser-scanning systems) cannot, sufficient data to define the size, electroplating and chemical the firm claims. In addition, shape and location of defects mechanical planarization (CMP), throughput of 100 300mm wafers anywhere within 1.5mm of a photoresist edge-bead removal (EBR) per hour enables EyeEdge to achieve wafer’s edge. EyeEdge then gener- and edge-cleaning effectiveness. higher productivity than other ates a three-dimensional image of EyeEdge is a stand-alone system, inspection systems on the market, each surface anomaly for easy but can be added as a module onto it adds. classification. the AltaSight platform to create a “We developed EyeEdge based on “The ability to detect minute shifts holistic system that can inspect a close communications with our in optical signals wafer’s front-side, back-side and strategic partners in the semicon- is critically Ability to detect edge simultaneously using a ductor market, whose requirements important at the minute shifts in combination of reflectivity, topo- for critical edge inspection and edges of wafers, optical signals graphical, dark-field and DeepSight cost-of-ownership performance are where thin-film technologies. incorporated into this new product,” overlapping and is critically “We have fuelled our innovation says president Jean-Luc Delcarri. delamination important at with continued customer interac- Altatech says that it has installed issues compli- the edges of tion and partnership and a large two beta-site systems at customers’ cate the inspec- wafers breadth of technologies in our IP R&D laboratories, where the equip- tion process,” portfolio,” says Delcarri. “We have ment is being qualified for use in says Delcarri. “More expensive quickly converted them into volume production. laser-scan inspection systems productive products and brought Designed for a wide range of users cannot discriminate between real them to the market,” he adds. — from wafer suppliers to integrated defects and false, irrelevant signals. “The demand is out there. As device manufacturers (IDMs) and Faced with wafer-to-wafer variations, everyone is striving for improved foundries to product development laser systems are not adaptive performance, our engineering laboratories — EyeEdge is a fully enough to continually changing team, sales and support services automated defect-classification noise/signal ratios,” he adds. are being expanded worldwide to system that comes standard with “Furthermore, relying on scattered solve our customers’ challenges.” three high-speed optical sensors light information limits the ability to www.altatech-sc.com/en

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com

34 News: Materials and processing equipment JPSA completes expansion; adds workstations to job shop

JP Sercel Associates Inc (JPSA) of “The laser equipment and R&D microelectronic, and biomedical Manchester, NH, USA, which makes services we provide will carry our industries. UV laser-based materials process- growth into the next decades as we JPSA’s building expansion provides ing workstations for wafer process- continue to develop new technolo- additional space, enabling the ing and micromachining, says that gies and increase our workforce,” installation of several laser micro- construction on expanding its laser says chairman & chief technology machining workstations, including manufacturing facility has been officer Jeffrey P. Sercel. “We at the ultrafast laser tools. As well as completed. JPSA feel fortunate to partner with providing cleanrooms and expand- This adds an extra 24,000ft2, giv- Jewett Construction in our growth,” ing production for manufacturing ing JPSA a total of over 58,000ft2 of he adds. “Their commitment to laser micromachining systems, the work space and providing the providing us an energy-efficient new facility houses an expanded ability to meet increasing demand building while meeting deadlines full-featured job shop and appli- for LED, solar, and excimer laser ensures JPSA will have a smooth cations laboratory. micromachining systems. transition to our next phase of “The ultrafast lasers will permit The expansion doubles the size of business.” fabrication of traditionally difficult the existing laser production area JPSA has also announced an materials such as quartz, glass, used to manufacture high-through- expansion to its job shop opera- and various metals, allowing us to put, high-precision laser micro- tions with the addition of new deliver a wide spectrum of mater- machining systems. It will also diode-pumped solid-state (DPSS), ials processing capabilities,” says provide cleanrooms, R&D labora- ultrafast and excimer laser work- Sercel. “We also added key appli- tories to develop cutting-edge stations. This will extend the firm's cation scientists as part of our micromachining applications, and capacity to accommodate its global planned growth strategy to better ergonomic office space to accom- micromachining customers with serve a global laser technology modate growing customer service cutting edge applications in the market.” and engineering teams. LED, solar, semiconductor, specialist www.jpsalaser.com

Invenlux orders JVS’ HRXRD tool for LED epi production

X-ray and vacuum ultraviolet (VUV) InvenLux Optoelectronics (China) ning in production lines across metrology tool maker Jordan Valley was founded in May 2009 and is China, Taiwan and other LED Semiconductors Ltd (JVS) of Migdal the LED product manufacturing manufacturing sites worldwide, Haemek Israel has received an facility for US-based InvenLux Corp Kapel notes. order from Invenlux Optoelectronics of El Monte, CA, USA. The firm spans The QC3 production metrology tool (China) Co Ltd of Haiyan, Zhejiang the complete LED manufacturing was designed for the characteriza- for its QC3 HRXRD high-resolution chain, including MOCVD growth, tion of all common semiconductor x-ray diffraction tool, a high- LED device design and processing, materials, including GaAs, InP, Si throughput, multiple-wafer-size material and device characterization, and GaN (thick buffers) for high- diffractometer, used for the quality and LED packaging & testing for brightness (HB) LED manufacturing. control of epitaxial layers in the volume LED production and The system also suits the analysis LED production line. advanced R&D. of multilayer structures such as “Jordan Valley’s XRD system will “The QC3 diffractometer was HEMTs and HBT, due to its capabil- have a key role at our new production designed for high throughput and ity to determine the thickness and line of GaN (blue, green and purple) low cost of operation, assuring out- composition of all layers within a epi-wafers, for which InvenLux has standing cost/performance value,” stack, especially graded composition their own patent,” says InvenLux says JVS’ director of sales & mar- layers within HBT structures (deter- Optoelectronics’ CEO Dr Chris Yan. keting Alon Kapel. “With RSM mined from first principles using “We have selected JVS systems to [reciprocal space mapping] scans the firm’s RADS HRXRD simulation meet our customers’ significant performed in just a few minutes, a software). The tool suits the meas- extension in demand, which multiple wafer stage (2–6”) and urement of MQW (multi-quantum appears about to gather yet more best analysis software (JV RADS), well) thickness, indium composi- momentum,” he adds. “Having JVS the QC3 system is optimized for LED tion, tilt and twist, and its high as our supplier gives us confidence mass production quality control,” intensity gives higher precision for that we will increase our capacity he adds. Since the QC3’s launch in better throughput, it is claimed. and gain operational efficiency and January 2010, many tools have www.jvsemi.com consistency.” already been installed and are run- www.invenlux.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Materials and processing equipment 35 Oxford Instruments appoints training officer

As part of its ongoing commitment Mark Vosloo. “Working with Oxford tion,” says Hilary Tanner, L-3 Com- to its customers, UK-based equip- Instruments’ trained system tech- munications EOS. “I learned a lot ment maker Oxford Instruments nicians and engineers, customers about ion sources,” adds Michael Plasma Technology (OIPT) has learn how to optimize the perform- Hume of University of Alberta, expanded its system maintenance ance of their system,” he adds. Canada. “The knowledge gained and process training offering, with “In addition our applications team about sources should prove a new program and by employing a and development scientists conduct extremely valuable.” dedicated training officer. process training courses in our Oxford Instruments offers a pro- Nick Curtis’ remit is to ensure that extensive UK gram of System User and Mainte- customers gain an insight into the applications The aim of the nance Training courses to help train full range of Oxford Instrument’s laboratories, courses is to customers’ staff at its factory near etch, deposition and growth systems tailored to ensure optimized Bristol, UK, in addition to on-site in order to maximize their perform- individual customer training. Courses are ance and process capabilities. customer system operation, available for the FlexAL and OpAL Curtis joins Oxford Instruments require- increased ALD (atomic layer deposition) sys- with many years experience in ments,” productivity, and tems, the full range of Plasmalab customer and in-house training for notes Vosloo. consequently to plasma etch and deposition systems, a large technical company, and is “All our and Ionfab ion beam systems. hence suited to developing the questions reduce down- The aim of the courses is to training programs at OIPT, the firm were time to a ensure optimized system operation, reckons. answered minimum increased productivity, and conse- “We build long-term relationships and I have to quently to reduce down-time to a with our customers based on trust say that I was very content with minimum and reduce service costs, and respect, and want to ensure that the course,” comments University while reinforcing long-term rela- they capitalize on the capabilities of of Leoben’s Matthias Edler of a tionships with customers based on their ‘Oxford’ systems,” says OIPT’s recent course. “You supplied good, trust and respect, concludes OIPT. sales & customer support director solid, thought-provoking informa- www.oxford-instruments.com

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 36 News: Materials and processing equipment

IN BRIEF Obducat secures equity financing Brewer Science Obducat AB of Malmö, Sweden, which it will not issue any shares. opens offices in which supplies systems based on No single new issue under the facility nano-imprint lithography (NIL) and may exceed SEK400,000 of pro- Tokyo and Seoul electron-beam lithography, has ceeds. Also, Yorkville is only obliged Brewer Science Inc of Rolla, MO, entered a financing agreement with to subscribe for such a number of USA says that, to better serve its YA Global Master SPV Ltd (Yorkville) shares that Yorkville’s holding in Asian customers with process and under which it, on several occasions the firm does not exceed 4.99% of material solutions for the semicon- during a 48-month period, may Obducat’s total number of shares. ductor, MEMS, and LED industries, issue new class B shares to Yorkville The facility entails certain custom- it has recently opened new offices up to an aggregate of SEK30m ary representations and warranties in Tokyo, Japan and Seoul, Korea, (about €3.3m, or $4.46m). and covenants by Obducat to joining its existing offices in “Our ability to choose if, and Yorkville. Taipei, Shanghai, and Hong Kong. when, to access funds under this In consideration for its undertakings “Local customer support is a facility provides us with important under the agreement, Yorkville is commitment of Brewer Science,” flexibility going forward,” says entitled to a fee of 1.5% of the says president Terry Brewer. CEO Patrik Lundström. “The facility SEK30m committed amount. “Working side by side with gives us a valuable additional Obducat will also reimburse Yorkville customers provides us with an financial resource to accomplish for certain legal costs. opportunity to address their the commercialization of our The agreement was conditional issues and provides them with product portfolio,” he adds. upon approval by a general meeting the most effective manufacturing The subscription price for new of Obducat on 3 January, including solution for the long term.” shares will be 95% of the lowest an initial authorization to issue new Brewer Science has delivered daily volume weighted average shares under the facility. technology solutions to the price for Obducat’s class B share As announced on 30 November, microelectronics industry for 30 during five trading days after Obducat is also carrying out a years, beginning with the inven- Obducat notifying Yorkville that a rights issue of convertibles with tion of anti-reflective coatings for new issue under the facility will be preferential rights for its sharehold- microlithography processes, the made. Further, in connection with ers and warrant holders. firm says. The firm’s products each new issue, Obducat has a right www.obducat.com include ARC anti-reflective coat- to determine a floor price below www.yorkvilleadvisors.com ings, ProTEK protective coatings, WaferBOND bonding materials, the ZoneBOND thin-wafer Ultratech opens Singapore processing systems, OptiNDEX high-refractive-index materials, International Operations facility OptiStack multilayer lithography systems, and Cee benchtop Lithography and laser-processing with this new facility in Singapore, processing equipment. system maker Ultratech Inc of Ultratech can better serve cus- The new offices are located at: San Jose, CA, USA has officially tomers from Thailand to Taiwan.” ●Brewer Science Japan G.K., opened its new manufacturing facil- The manufacturing facility will be Level 28, Shinagawa Intercity A, ity in Singapore, attended by about capable of producing more than 2-15-1, Konan, Minato-ku, 200 guests (including Singapore 100 lithography steppers annually Tokyo, Japan 108-6028, Economic Development Board for the advanced packaging and the Tel: +81 (0)3 6717-4378; chairman Leo Yip) and followed by a high-brightness LED (HB-LED) ●Brewer Science Asia Ltd, plant tour. The firm plans to spend markets. Along with providing engi- Korea Representative Office, more than $125m over the next neering support in Singapore, the 30th Floor ASEM Tower, 159-1, several years in support of its facility will also serve as headquar- Samsung-dong, Gangnam-Gu, Singapore International Operations. ters for Ultratech’s global service Seoul, Korea 135-798, “After an extensive study in the operations and Asia Pacific sales Tel: +82 2 6001 3498. Asia Pacific region, we selected Sin- organization. The firm plans to Brewer Science exhibited in the gapore for several business reasons start manufacturing lithography Next Generation Technology including being conveniently located systems at its Singapore facility in Pavilion at the SEMICON Japan to Ultratech’s served markets,” says late 2010, with the first tool ship- 2010 trade show (1–3 December). chairman & CEO Arthur W Zafiropoulo. ments to customers scheduled for www.brewerscience.com “We expect 75% of our business to first-quarter 2011. be located in the Pacific region and, www.ultratech.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com

38 News: Materials and processing equipment Soitec and SEI to co-develop engineered GaN substrates Smart Cut targets lower cost for high-brightness LEDs and power devices for hybrid and full electric vehicle Soitec of Bernin, France, which facilitate widespread use of GaN wider use of our high-quality GaN manufactures silicon-on-insulator substrates in applications such as wafer... device manufacturers (SOI) wafers and other engineered high-brightness LEDs as well as focused on low unit area costs will substrates, and Japan’s Sumitomo electric power devices designed for find value in the greater functional- Electric Industries Ltd (SEI), a hybrid and full electric vehicles. ity of these engineered substrates,” provider of compound semiconductor “Our collaboration with Soitec will Yokogawa believes. materials, say that they are work- open the door to high-quality, “We are partnering with the leader ing together to develop engineered lower-cost GaN substrates,” in GaN wafer manufacturing to gallium nitride (GaN) substrates. believes Masamichi Yokogawa, offer engineered substrates that The alliance will draw on Sumit- Sumitomo Electric’s executive officer have the best crystal quality avail- omo Electric’s GaN wafer manufac- and general manager of its able today,” claims Soitec’s CEO turing technology and Soitec’s Compound Semiconductor Material Andre-Jacques Auberton-Herve. unique Smart Cut layer transfer division. “We have demonstrated “This collaboration represents the technology by which ultra-thin GaN that the transfer of a thin layer of first step of an important move in layers are transferred from a single our high-quality GaN crystal to a our strategy to address the need GaN wafer to produce multiple, carrier wafer is the right approach for dramatically improved efficiency engineered GaN substrates retain- to make our GaN material accessi- in power conversion and lighting ing the original, high crystalline ble for various applications such as with innovative materials engi- quality of Sumitomo Electric’s GaN power devices and white LEDs,” neering solutions.” wafer but at a lower cost. The tech- he adds. “We are expecting the www.soitec.com nology is therefore expected to collaboration with Soitec will enable http://global-sei.com

GT Solar wins first orders for sapphire furnace since acquiring Crystal Systems $84m in orders from new sapphire makers in China GT Solar International Inc of Merri- tomers has been very positive,” “Our advanced sapphire crystal- mack, NH, USA (a provider of poly- says president & CEO Tom Gutierrez. lization systems are built on a silicon production technology as well “We continue to talk with other highly scalable and reliable archi- as sapphire and silicon crystalline potential customers in the Asia tecture that lets customers quickly growth systems and materials for region for our sapphire crystallization ramp to volume production with a the solar, LED and other specialty systems, and believe we are on lower capital investment compared markets) has received its first track to meet our projected $100m with other competing crystallization orders for sapphire crystallization in revenue in our fiscal year 2012 technologies,” claims Gutierrez. furnaces since July’s $57.8m acqui- from sapphire crystallization equip- “The combination of our technology sition of privately held large-area ment sales,” he adds. and the depth of our regional serv- sapphire substrate growth firm The two orders represent GT ice and installation expertise deliver Crystal Systems Inc of Salem, MA. Solar’s entry into the LED equip- compelling value to our customers Totaling more than $84m, the two ment market, which it stated it by reducing the risks of equipping orders come from Jiangsu Jixing would pursue on acquiring Crystal and commissioning a new manu- New Material Co Ltd and Jiujiang Systems. Both Jiangsu Jixing New facturing facility,” he adds. Sapphire Tech Co Ltd (affiliates of Material and Jiujiang Sapphire Tech The two orders, in combination with two “highly valued long-term are positioning themselves to other DSS (Directional Solidification photovoltaic customers”) for their capitalize on the expected growth System) and polysilicon orders, bring new production facilities. The total of the LED market over the coming GT Solar’s bookings for the current annual production capacity of the years by building the capacity to quarter (fiscal Q3/2011 to date) to two orders is about 8 million produce high-quality, large-area more than $245m, strengthen the two-inch equivalents (TIE) of sapphire substrates. These initial firm’s view for a strong fiscal 2012 sapphire substrates. customers will be targeting the (based on the pipeline of orders still “The response to our sapphire high-brightness LED market seg- under discussion with customers). equipment strategy from cus- ment, says GT Solar. www.gtsolar.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Materials and processing equipment 39 Peregrine and Soitec announce bonded SOS substrate

Peregrine Semiconductor Corp of jointly engineered by the two firms. VP, RF Technology Solutions. “This San Diego, CA, USA, a provider of Soitec’s process expertise was used achievement has provided the radio-frequency (RF) integrated cir- to transfer and bond a high-quality, opportunity to exploit even greater cuits (ICs), and Soitec of Bernin, monocrystalline thin silicon layer RF performance in our products. France— which manufactures onto a sapphire substrate. It is We look forward to continuing our engineered substrates including claimed that the resulting bonded collaboration and exploring new silicon-on-insulator (SOI) wafers and silicon layer offers improvements in opportunities together with Soitec,” (through its Picogiga International transistor mobility and silicon quality he adds. division) III-V epiwafers — have beyond conventional SOS wafers, “In just two years we were able to announced the joint development which use an epitaxially grown silicon move from the feasibility phase to a and ramp in production of a new, layer. The new substrate provides mature product ready for industri- bonded silicon-on-sapphire (SOS) Peregrine a design landscape for alization and production ramp,” says substrate that has been qualified for enhancements in RFIC performance, Bernard Aspar, general manager use in manufacturing Peregrine’s functionality, and form factor, of Soitec’s Tracit business unit next-generation STeP5 UltraCMOS enabling IC size reduction and (which provides thin-film layer SOS-based RF ICs. performance increase by as much transfer technologies used to Soitec says that its core direct as 30%, says Soitec. It also manufacture substrates for power wafer-bonding technologies and enables Peregrine to continue its ICs and microsystems, as well as industrial know-how, combined long-term strategy toward highly generic circuit transfer technology, with Peregrine’s legacy SOS integrated RF front-end (RFFE) IC Smart Stacking for applications process development and IC design solutions in a substrate technology such as image sensors and 3D expertise, enabled the rapid devel- that matches the yield and scalabil- integration). “This is an excellent opment of a tuned substrate that ity qualities of bulk silicon. example of how our core technolo- delivers the RF performance “Soitec’s impressive substrate gies can extend to new applications required by ever-advancing mobile expertise and industrial capabilities and markets, where there is always wireless and industrial markets. enabled us to meet our vision for a need for more functionality at the The new substrate is a bonded next-generation UltraCMOS process- substrate level.” monocrystalline SOS substrate ing,” says Mark Miscione, Peregrine’s www.psemi.com

Monocrystal launches 10-inch sapphire substrate

Monocrystal Inc of Stavropol, Russia, Sapphire sub- which provides sapphire products strates are cur- and metallization pastes to the rently used for semiconductor, optical, and photo- more than 90% of voltaic industries, has announced gallium nitride the availability of its ultra-large (GaN) LED chips 10-inch c-plane epi-ready sapphire produced, including substrate. high-brightness The LED industry continues to devices used for shift to larger-diameter substrates LED lighting prod- as it strives to achieve greater cost ucts (as well as savings and to increase LED chip increasingly being production throughput in order to adopted in appli- bring LED lighting closer to wide- cations such as spread use, says Monocrystal. mobile devices, dis- The firm says that it hence contin- plays, traffic lights, ues to develop next generation car lighting and large-diameter sapphire wafer interiors). Com- technology. Monocrystal’s 10” c-plane epi-ready sapphire substrate. pared with conven- “The introduction of innovative tional incandescent 10-inch LED sapphire substrates demands and expand LED industry lamps, LEDs consume up to 90% clearly demonstrates that prospects,” claims CEO Oleg less energy and have a life-span Monocrystal is well positioned to Kachalov. “This further strengthens 50 times longer, says Monocrystal. support the growing market Monocrystal position,” he adds. www.monocrystal.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 40 News: Materials and processing equipment San Chih’s revenue for sapphire ingots to overtake silicon wafers in second-half 2011 December’s sapphire sales 10–15% of revenue after November start up Analysts forecast that the revenues plans to increase this to 15–20 in growth higher than the industry of Taiwan’s San Chih Semiconductor first-half 2011, bringing monthly average for 2011 since fabs in Co Ltd from sapphire ingot capacity to 100,000mm, the firm Europe and the USA are outsourc- production will exceed those from indicates, adding that the facility ing small- to medium-size wafer semiconductor wafers (silicon) in could house maximum monthly business as they place more first-half 2011, reports Digitimes. capacity of 400,000mm when all emphasis on the large-diameter San Chih’s sapphire ingot facility production lines are online in first- segment. and equipment went online in quarter 2012. However, due to the higher margin fourth-quarter 2010 and began San Chih mainly manufactures of sapphire ingot business, contributing to revenue in November. 2-, 4- and 5-inch semiconductor San Chih’s earnings per share (EPS) December’s sales should rise to wafers, but it has also entered is expected to rise from NT$7–8 in NT$7m (US$234,000), about volume production of 6-inch wafers 2010 to NT$12 in 2011, analysts 10–15% of overall monthly revenue. and is currently evaluating oppor- note. San Chih will have installed 10 tunities for producing 8-inch www.sanchih.com.tw/en furnaces by the end of 2010 and wafers. The firm forecasts revenue www.digitimes.com

Rubicon opens sapphire polishing facility in Malaysia First plant outside US supports large-diameter demand

Rubicon Technology Inc of wafers in large volumes to our cus- LEDs into the general illumination Bensenville, IL, USA, which makes tomers worldwide,” says president market (including light bulbs). LEDs monocrystalline sapphire substrates & CEO Raja Parvez. “While the are a popular option for backlighting and products for the LED, RFIC, Batavia facility leverages the screens from HDTVs, traffic lights semiconductor and optical industries, stability and lower cost of valuable and large displays as well as in a has opened its first facility outside resources broad range of common consumer the USA. The plant in Penang, such as The facility in devices including tablets, notebooks, Malaysia will be responsible for power, the Malaysia leverages laptops, mobile phones, navigation labor-intensive crystal polishing facility in the location to devices, digital music players, digi- processes, significantly expanding Malaysia tal photo frames, digital cameras the firm’s production capacity for leverages further lower and keypads, says Rubicon. LED large-diameter (6”, 8” and 12”) the location costs and bring usage in general lighting appli- polished wafers. to further our extensive cations is also increasing signifi- As the only vertically integrated lower costs experience in cantly, particularly in applications manufacturer of large-diameter and bring like street lighting, industrial light- sapphire wafers in large volumes, our polishing large- ing and architectural lighting. Rubicon supplies to LED makers extensive diameter wafers Rubicon claims that its expansion worldwide. The Malaysia facility, experience close to the LED, into Asia demonstrates its leader- combined with Rubicon’s new in polishing ship in the production of high-qual- consumer 135,000ft2 crystal growth facility large- ity, large-diameter sapphire wafers. in Batavia, IL which produced its diameter electronics and The firm currently has the capabil- first boule in early November wafers general lighting ity to produce polished sapphire (both leveraging large-diameter close to the manufacturers wafers up to 12” in diameter. The sapphire), have been established LED, con- transition to large-diameter wafers to deliver the sapphire capacity sumer in Asia in LED production has started, it necessary to support the growing electronics asserts. Earlier in 2010, Rubicon demand for LEDs in the consumer and general lighting manufacturers announced that it had entered into electronics and general lighting in Asia,” he adds. a $71m agreement with a major industries. Market research firm iSuppli LED chip maker for which Rubicon “Rubicon’s recent build-out of expects the global LED market to will provide six-inch polished infrastructure optimizes our ability nearly double to almost $14.3bn by substrates. to deliver large-diameter sapphire 2013, driven by the penetration of www.rubicon-es2.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 41 LEDs on Ostendo/TDI’s semi-polar GaN 2.5x brighter than c-plane LEDs

Ostendo Technologies Inc of Carlsbad, CA, USA (which develops solid- state lighting based display technologies and products for commercial and consumer markets) and Technologies and Devices International Inc c-plane a-plane m-plane (TDI, part of the UK’s Oxford Instruments Group) say that LED structures grown on their Schematic illustration of crystal orientations for – semi-polar (1122) (A) polar (c-plane), (B) non-polar (a-plane and gallium nitride wafers m-plane) and (C) semi-polar nitride material for have resulted in more high-brightness LEDs. than 2.5x the emission intensity of c-plane GaN-based LED makers to start considering it for structures (Strittmatter et al, future LED brightness improve- ‘Semi-polar nitride surfaces and ments,” says Ostendo’s Dr Hussein heterostructures’, Physica Status S. El Ghoroury. Solidi (b), October issue). “We are delighted that the In 2008, Ostendo and TDI entered production-grade, semi-polar GaN into an Information Exchange wafers produced at TDI, which are Agreement with Xerox Corp sub- as a result of research funded by sidiary Palo Alto Research Center Ostendo, has generated such (PARC) to make semi-polar GaN encouraging results,” comments wafers available on which PARC Frazer Anderson, business develop- could grow LED and laser diode ment director at Oxford Instru- structures, and to independently ments. “This joint initiative with validate and report the results Ostendo and PARC meets our achieved. customers’ needs through the As part of their validation, PARC advanced technology our companies has grown a multi-quantum-well have available,” he adds. (MQW) LED structure on the In June, Ostendo and TDI semi-polar GaN side-by-side with a announced the availability of a – reference c-plane LED structure in semi-polar (1122) GaN layer on the same MOCVD run. Some of the sapphire substrate wafers using key results verify that: the LED Ostendo’s proprietary design structure grown on the semi-polar together with TDI’s proprietary GaN achieved more than 2.5x hydride vapor phase epitaxy more emission intensity than the (HVPE) technology. reference LED structure grown on The firms says that this joint c-plane GaN; and the semi-polar development now provides the GaN allowed higher indium (In) opportunity to high-brightness incorporation, resulting in a longer light-emitting diode (HB-LED) and peak wavelength of ~25nm for the laser diode developers to increase structure grown. optical efficiency significantly “This is an excellent validation of compared with structures grown on our work in the semi-polar GaN c-plane GaN substrates. area for the last two and a half www.ostendo.com/gan years as it verified the main www.oxford-instruments.com advantage of our semi-polar GaN http://onlinelibrary.wiley.com/doi/ and should help encourage LED 10.1002/pssb.201046422/abstract www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 42 News: LEDs IN BRIEF Lumileds enters mass production of SETI ‘highly GaN LEDs on 150mm wafers commended’ by 3” production continuing during ramp-up IET’s Innovation Philips Lumileds of San Jose, CA, USA Lumileds will continue its existing Awards for UVClean claims to be the first power LED 3” wafer production while ramping maker in mass production on up its 150mm capacity to meet DUV LED lamp 150mm wafers, producing millions increasing demand for high-quality, Deep ultraviolet (UV) LED maker of GaN-based LEDs weekly on them. high-performance LEDs from the Sensor Electronic Technology Inc “Addition of 150mm manufacturing lighting, automotive, and consumer (SETI) of Columbia, SC, USA has capacity to our existing capability electronics segments. been selected as a ‘highly com- leverages our epitaxy and wafer Capacity expansion is a key driver mended’ innovative company by fabrication technology excellence in the adoption of LED technology, the Institution of Engineering and gives Lumileds the capacity to says the firm. The ability to add and Technology (IET, Europe’s produce billions of LUXEON LEDs high-capacity epitaxial reactors largest professional engineering annually,” says Matthijs Glastra, with enhanced productivity and society) during its 2010 Innova- executive VP of worldwide operations. yield means it has a lower need for tion Awards. “The pace of LED adoption will capital expenditure and can drive This year, the IET received a require all other manufacturers to cost down as volume increases. record number of almost 400 follow our lead and adopt similar “Some of the newer entrants to nominations for the Innovation strategies... Their challenge will be LED manufacturing require many Awards, from which SETI was to achieve the high yields and qual- more reactors to match our volume shortlisted to five entries in the ity levels that we have already capacity,” says Glastra. category of ‘Emerging Technolo- demonstrated.” Lumileds says that its engineers, gies’ for the development of its Each 150mm wafer produces four scientists and system operators in UVClean deep UV LED lamps. times the number of LEDs as the San Jose and Singapore have Based on the same technology current 3” wafers. The transition to installed, customized and optimized as the firm’s UVTOP products, a larger size is critical to providing equipment to meet its production SETI says that its UVClean lamps the increasing number of LEDs standards and ensure its processes have been developed to provide required by the lighting industry deliver the light output, efficacy, a reliable, compact and environ- and ensuring a supportable and reliability and quality expected. mentally friendly solid-state light secure supply chain, says Lumileds. www.philipslumileds.com source for healthy lifestyle prod- ucts. Markets including water, air and surface disinfection have Crystal IS wins $5m DARPA award to been identified, as well as pho- totherapy for treating conditions develop efficient germicidal LEDs such as psoriasis, vitiligo and eczema. All of these markets Crystal IS Inc of Green Island, NY, and bring bright, efficient, and long require high-power lamps. SETI USA, which makes UVC ultraviolet lifetime UVC LEDs to market sooner.” has standard UVClean products LEDs on aluminum nitride (AlN) The program will run in parallel commercially available at powers substrates, has been awarded $5m with a joint development with of 1–3mW, 3-5mW, 10–15mW by the US Defense Advanced Japan’s Asahi Kasei Corp announced and 30–50mW. Research Projects Agency (DARPA) in August to create a manufacturing UVClean lamps have already to develop efficient LEDs operating process for large-diameter AlN been designed into customer’s at wavelengths below 275nm for substrates. disinfection products and SETI use in water sterilization and other “To make the project as successful believes that, with the benefits applications of interest to the as possible we have assembled a delivered from LEDs, UVClean Department of Defense. group of expert collaborators,” says will become the industry stan- “DARPA selected us for this award Crystal IS’ chief technology officer dard for UV lamps in the healthy based upon the performance of our & founder Dr Leo Schowalter. lifestyles market. existing 265nm LEDs that leverage “These include industrial and uni- www.s-et.com our proprietary AlN substrate tech- versity partners and a cooperative http://conferences.theiet.org/ nology,” says CEO Dr Steven Berger. research agreement with the Army innovation-awards/category- “With the tremendous help pro- Research Laboratory, administered emerging.htm vided by DARPA, we believe we will by Dr Wraback.” accelerate the development cycle www.crystal-is.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 43 Epistar expects 25–30% growth in 2011; plans $280m bond issue $19.5m investment raises stake in China JV to 55%

After experiencing weakening Epistar’s VP of finance & accounting which has a 15% stake in Epistar). demand and falling prices in fourth- Rider Chang said that LED lighting Epistar’s investment in the joint quarter 2010, Taiwan’s largest LED accounts for about 20% of the firm’s venture will hence total US$27.5m chipmaker Epistar Corp will resume sales and backlighting about 50%. (after the two partners initially its growth momentum in first-quar- Last month, JPMorgan said that invested US$8m each), boosting ter 2011 in view of rising component Epistar is in the process of shifting its stake from 50% to 55%. re-stocking in China and South Korea, its focus from TV backlights to light- Despite worries of over-supply in reckons analyst firm Primasia ing applications and is undertaking the LED industry in 2011, Epistar Securities Co according to a report a rapid change in product mix in says that short-term changes in in the Taipei Times. “We forecast order to sustain growth in earnings. terms of seasonality and the company’s sales to grow by Also, in a stock exchange filing on supply–demand issues are hard to 25–30% year-on-year in 2011,” 23 December, Epistar announced avoid, and it remains optimistic the firm says in a client note. that its board has approved a plan about future potential LED market After the increasing installation of to issue (over the next two years) growth (particularly due to contin- new MOCVD reactors by companies zero-interest five-year euro con- ued growing demand for LED light- in 2011 as well as a parity between vertible bonds (ECBs) worth ing), according to a report in supply and demand in the LED sec- US$280m, mainly for paying back Digitimes. The firm believes it tor, Primasia forecasts that average previous US dollar-based loans and should start funding capacity selling prices (ASPs) for LEDs may for future equipment purchases. expansion for future demand, so drop by 10–15% in 2011. To offset In particular, Epistar is investing that it will have enough capacity to this trend, Epistar aims to grow its an extra US$19.5m in United LED handle orders when they arise. sales of high-margin LEDs for TV Shan Dong Corp, the joint venture www.epistar.com.tw and lighting application by 55–60% established in China’s Shandong www.unitedled.cn in 2011 (compared with growth of Province last March with Taiwan’s www.taipeitimes.com/News/biz/ 40–45% in 2010), Primasia says. second largest silicon wafer foundry archives/2010/12/25/2003491794/1 Previously, on 3 December, United Microelectronics Corp (UMC, www.digitimes.com Taiwan’s Lextar produces 6-inch LED epiwafers Epistar to start small-scale 6-inch production in mid-2011

Lextar Electronics Corp of Hsinchu overcome problems such as third-quarter 2010, and was Science Park, Taiwan, a subsidiary warping or cracking in the 6-inch expected to rise to 70–80 at the of display panel maker AU Optronics production process. Nevertheless, end of the year (mainly 4-inch (AUO) that manufactures high- the firm expects to start mass models), as the firm aims to brightness LED epiwafers, chips and production on 6-inch wafers only become the largest production base packages, has produced its first in second-half 2011. for 4-inch wafers in Taiwan. 6-inch LED epitaxial wafer, while LED Chairman David Su noted previ- Epistar says that currently 50% of epiwafer & chipmaker Epistar Corp ously that Lextar will set up a its capacity is from 4-inch equip- is expected to adopt 6-inch wafers in 6-inch production plant at the end ment, but it is scheduled to start its production process in mid-2011, of 2011, as most LED players in small-volume production on 6-inch reports Digitimes. Europe and Japan have already equipment in mid-2011. However, Some industry players note that started to adopt 6-inch production the time-frame for mass production costs for 6-inch wafer production equipment, while Korea-based LED on 6-inch wafers remains unclear remains high, and mass production makers are also focusing on due to issues such as yields and may not yet be economical. How- expanding 6-inch equipment, and the high cost of 6-inch sapphire ever, Lextar says that, by using only Taiwan still remains at 2-inch substrates, says Digitimes. new-generation equipment with production. www.lextar.com special focus exposure and grinding The number of MOCVD reactors www.epistar.com.tw technologies, it has been able to at Lextar reached 50 at the end of www.digitimes.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 44 News: LEDs LED chip demand for TV backlighting to return to first-half 2010 levels in February Forepi MOCVD reactors to rise to from 56 to 126 in 2011 Taiwan-based LED chipmaker For- However, other tablet vendors such capable of producing 12 million epi- mosa Epitaxy (Forepi) expects LED as Samsung Electronics and LG taxial wafers per month. By the end chip demand to return to the levels Electronics could begin sourcing of 2011, capacity should rise to of first-half 2010 in February and from LED chipmakers in Taiwan, 15–20 million wafers per month. March 2011 (including volume which should be boost gross margin. In 2011, with projected capital shipments for applications in tablet With LED TV market penetration expenditure totalling NT$4–5bn, PCs beginning in February), accord- expected to rise significantly in Forepi’s total number of MOCVD ing to chairman Chien Fen-ren 2011 due to falling prices, Chien reactors in Taiwan and China com- reported in Digitimes. He adds that expects gross margin for the sector bined should rise to 126. the firm could post record sales in to take a hit, but to still be main- Forepi has also inaugurated its second-quarter 2011. tained at 30–35% in 2011 due to Jiangsu Canyang Corp LED chip sub- Forepi will register NT$4.5bn new applications such as the tablet sidiary in Jiangsu, China, in which (US$150.56m) in revenue for 2010 PC. LG Display, Amtran, Unity Opto and (up 120% on 2009), while growth In fourth-quarter 2010, Forepi Wooree are major investors. Its of 50% is projected for 2011, mar- should ship 10–20 million LEDs revenue for 2011 is projected to be ket analysts indicate. TV backlight, for pico projectors, amounting to CNY300–500m (US$44.95–74.92m) lighting and tablet PC applications 2–3% of its quarterly revenue and it could become China’s largest should account for 60%, 15% and although average selling price epiwafer maker in 2012 when it 15% of sales, respectively. (ASP) is 6–7 times higher than completes the installation of 50 Chien notes that Japan’s Nichia conventional chips, Chien says. MOCVD reactors. and Toyoda Gosei are the LED chip Forepi’s Taiwan facilities are www.forepi.com.tw suppliers for Apple’s tablet PC. equipped with 56 MOCVD reactors, www.digitimes.com Tablet PCs to drive high-end chip shortage in February Forepi to spend $150m in 2011, targeting 50% sales growth

Due to the rise of tablet PCs, the shortages of LED chips, especially coming years and, consequently, supply of high-end LED chips is higher-end models, are very likely use a large part of the limited likely to fall short of demand, start- to loom then and linger through- supply of LEDs in the future. ing February 2011 at the earliest, out the year, he adds. This implies that demand for LEDs forecasts Frank Chien, chairman of Aware of the possible LED short- will skyrocket, along with more Taiwanese LED maker Formosa age, some display panel makers LED-backlit devices being put on Epitaxy Inc (Forepi), according to have moved to secure their product shelves worldwide. a report in Taiwan Economic News. sources of supply. For example, To capitalize on the market Tablet PCs have quickly emerged Korea’s LG Display has joined with boom, Forepi plans to add 15–20 as one of the most stellar products Forepi and Taiwanese TV maker MOCVD reactors for its Taiwan in the global market. Like LCD TVs Amtran Technology Co Ltd to form factory, and 25 for the LG Dis- and monitors, they mainly use the LED-making joint venture play–Amtran– Forepi joint venture. LEDs as the light source for back- Jiangsu Canyang Corp in China. Currently, 60% of Forepi’s LED lights, and Chien confirms that The collaboration will not only help output goes to usage in TVs, 15% Forepi started delivering LEDs for LG Display to secure a stable supply each to tablets and LED lighting, tablet PCs in October. of LEDs, but should also provide and 10% to projectors and other In addition to Apple’s hot-selling additional momentum to Forepi’s devices. The firm aims to increase iPad, which uses LEDs made by business growth, Chien says. its capital equipment budget to Japan’s Nichia Corp and Toyoda In the meantime, Amtran is NT$4–5bn (about US$150m) in Gosei, many tablets developed by concerned about LED shortages in 2011, targeting annual revenue of other global PC vendors are sched- 2011, and has stated that, with NT$7bn, or US$234m (up more uled for launch from early 2011, selling prices falling, LED-backlit than 50% on 2010’s NT$4.5bn, or most of which use Taiwan-made LCD TVs will replace traditional US$150m). LEDs in their backlights, says CCFL (cold-cathode fluorescent http://news.cens.com/cens/html/ Chien. It hence makes sense that lamp) TVs more quickly in the en/news/news_inner_34683.html

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 45

Mitsui to become Forepi’s largest IN BRIEF shareholder, taking 15% stake Tekcore signs syndicated loan Japanese industrial conglomerate Forepi will raise about NT$3.2bn Mitsui & Co (which has businesses (about US$107m) of funding in LED chipmaker Tekcore has involving the monitor and auto- total. This is different from fellow signed a NT$3.8bn (US$124.53m) mobile industries) is to become the chipmaker Epistar, which is focusing syndicated loan with a banking largest shareholder in Taiwan’s mostly on expanding capacity, it is consortium. The funds will be second-biggest LED epitaxy and said. Forepi continues to expand its used to build a new plant and to chip maker Formosa Epitaxy Inc by development vertically and purchase equipment. taking a 15% stake through private increase export demand. Buoyed by shipments of high- placement, reports Digitimes. Based on the roadmaps of Forepi margin blue LED chips, Tekcore At a price of NT$36.44 per share, and Mitsui, the investment will has seen revenue grow boom in Mitsui is investing NT$2.7bn to focus in the short-term on LEDs for 2010, with profit generated in buy 74.693 million shares, while monitor and TV back-lighting, in the the first three quarters more Taiwanese LED packaging house mid-term on the lighting market, than doubling year-on-year. Unity Opto Technology Co Ltd is and in the long-term on the auto- Tekcore expects global ship- raising its stake by buying 15.307 mobile market. The cooperation ments of LED TVs to exceed 100 million shares for NT$0.558bn. with Mitsui will focus on the Chinese million units in 2011. This penet- The Taiwan Economic News says and Japanese markets. ration rate of 51% in the LCD TV that the investment will help Unity Forepi also expects to attract market should reach 87% in 2014. to secure a steady source of LED more strategic partners thought its Tekcore expected its monthly chips for its backlight packages cooperation with Mitsui. revenues in fourth-quarter 2010 used in applications including TVs, www.forepi.com.tw to average about NT$200m. computer monitors and tablet PCs. http://news.cens.com/cens/html/ www.tekcore.com.tw The firm has also begun introducing en/news/news_inner_34736.html www.digitimes.com LED packages for general lighting. www.digitimes.com

Tyntek to add 10–15 MOCVD reactors in Q2–Q3/2011 Subsidiary Alpha Plus could reach capacity of 30 reactors this year

Taiwan-based LED packaging firm Also previously, in October, ing equipment, targeting the back- Tyntek Corp plans to raise its Tyntek announced plans to invest lighting and general public lighting capacity for LED epitaxy and chip RMB153m (US$23m) to establish markets in China. production, according to Digitimes. an LED joint venture with the Tyntek only recently branched out The firm’s epiwafer subsidiary Fuzhou city government in main- into chip making. According to the Alpha Plus Epi Inc currently has land China. Total investment will be Taiwan Economic News, the firm seven metal-oxide chemical vapor RMB353m (US$53m). First-phase established Alpha Plus after failing deposition (MOCVD) reactors at its development will focus on LED epi- to agree a merger with epiwafer plant in Taichung Industrial Park taxy and chip maker Ubilux Optoelectronics Corp and has begun test production. production, A second phase of Southern Taiwan Science Park, Full production is scheduled for with plans to of expansion which was founded in September first-quarter 2011, when monthly install 30 starting in 2007 as a subsidiary of Taiwanese revenue should be about NT$50m MOCVD DRAM chip-maker PowerChip Semi- (US$1.6m). reactors and second-half 2011 conductor Corp (PSC). With plans In addition, Tyntek now plans to to start (depending on to produce blue, red and green LED invest US$30m for Alpha Plus to epiwafer market chips as well as sensor devices, install 10–15 more MOCVD reactors production Tyntek is competing against fellow in the second and third quarters of by fourth- conditions) could Taiwanese LED makers Epistar 2011. A second phase of expansion quarter increase the total Corp, Formosa Epitaxy Inc, Genesis starting in second-half 2011 2011. The towards the Photonics Inc and Tekcore Co. (depending on market conditions) second plant’s maximum www.tyntek.com.tw could increase the total towards phase will http://cens.com/cens/html/en/ the plant’s maximum capacity of install LED capacity of news/news_inner_34757.html 30 reactors. chip packag- 30 reactors www.digitimes.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 46 News: LEDs Optogan opens largest LED plant in Eastern Europe First production line has annual capacity of 360 million LEDs

Sergey Ivanov, deputy Prime Minister new LED production plants of the Russian Federation, has solely in the Far East, Optogan officially opened the new manufac- reckons that it has found a turing plant in St Petersburg of LED suitable legislative and infra- maker Optogan Group. structure environment to The ceremony was also attended establish high-tech manufac- by St Petersburg’s Governor turing in Russia, enabling Valentina Matvienko; Yegor Borisov, high-volume LED output at President of Russia’s Sakha Republic competitive cost. RUSNANO (Yakutiya); Anatoliy Chubais, (the Russian Corporation of general director of Rusnanotech; Nanotechnologies) — a fund Mikhail Prokhorov, president of Optogan’s new LED component and module providing investment for tech- ONEXIM Group, as well as repre- factory in St Petersburg. nology projects in the Russian sentatives from politics, research Federation — has provided and industry. wealth of Independent States (CIS), support for the firm and is one of Optogan’s unique chip production covering 15,000m2 of floor space its major shareholders. “The key technology was created by (including 5000m2 of cleanroom). goal of RUSNANO is to develop Vladislav Bougrov and Maxim The first production line has an modern production facilities based Odnoblyudov, who were PhD annual capacity of 360 million LEDs on leading international scientific students of Nobel prize winner (30 million per month), and further knowledge, ensuring they can com- and Russian Academy of Science capacity extensions are scheduled pete globally,” says RUSNANO’s member Zhores Alferov at the for the end of 2011. Staffing will be general director Anatoly Chubais. Ioffe Physico-Technical Institute in up to 800. “The opening of Optogan’s factory St Petersburg in the 1990s before “LEDs produced in St Petersburg is one of the major synergies of working at Finland’s Helsinki Uni- will be sold in Russia and abroad,” science and business. Technology versity of Technology then, in late says Vladislav Bougrov, general based on the work of Nobel prize 2004 (together with Alexey Kovsh), director of the plant. “We’ve already winner Zhores Alferov has been founding OptoGAN in Helsinki to signed our first major contracts,” transformed into mass production, develop GaN-based LEDs. he adds. making this a first step in the Optogan is now a vertically “Part of the LED shipments will be development of a new energy- integrated manufacturer of high- sent to our partner companies all efficient economy and development brightness LED chips, components, over Russia to produce luminaries,” of the lighting industry in Russia.” lamps and luminaires. In addition notes Optogan’s executive VP In late 2008, OptoGAN was to Optogan Group having locations Alexey Kovsh. Optogan says that it acquired by ONEXIM, a private in Helsinki, since 2005 Optogan has established a unique business investment fund founded by Mikhail GmbH in Germany has been model to supply core LED technology Prokhorov in May 2007 that invests developing chip technologies in for luminaires and to support to an in metals & mining, power engi- Dortmund and has a chip production extensive network of partners within neering, including hydrogen power facility in Landshut. In July 2009, Russia. In future the luminaire engineering and nanotechnologies Optogan began operations in Russia. business partner approach will be as well as in financial services, This May, it acquired the industrial extended to global level, Kovsh adds. mass media and real-estate indus- facility and infrastructure of Elcoteq In contrast to the trend to establish tries. “ONEXIM’s strategy is to in St Petersburg, where it has been invest in these types of innovative setting up LED production lines. companies, which can produce At the St Petersburg plant’s open- quality products and win a major ing, Odnoblyudov, Bougrov and market share in Russia, as well as Kovsh introduced the production the potential to grow globally,” says facilities, as well as demonstrating Mikhail Prokorov, president of main Optogan’s LED lamps. shareholder ONEXIM Group. “We With an overall investment of are sure that, thanks to this type of 3.35bn rubles (€80m), the new production, our country has all the facility is the largest LED component opportunities to develop on the and module manufacturing plant in Optogan’s new high-volume LED global market.” Eastern Europe and the Common- assembly lines. www.optogan.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 47 Great Wall Kaifa, Epistar, Evertop & Country Lighting form KFES Lighting Xiamen-based JV to install 30 MOCVD tools

Agreement has been reached to products, memory modules, video form a joint venture named KFES heads and automation equipment. Lighting Co Ltd in Xiamen, Fujian KFES Lighting’s scope will include province, China, to be owned 44% the research, manufacture and sale by Great Wall Technology Co Ltd of LED wafers, chips, light sources, subsidiary Shenzhen Kaifa Technol- light source modules and LED light- ogy Co Ltd (Great Wall Kaifa), 40% ing, as well as the provision of by Epistar JV Holding (BVI) Co Ltd, after-sales services. 9% by Evertop (Fujian) Optoelec- The investors have also entered tronics Co Ltd and 7% by Country into an agreement with the Lighting (BVI) Co Ltd. management committee of Capital injections of $52.8m, Xiamen Torch Hi-Tech Industrial $48m, $10.8m and $8.4m respec- Development Zone to establish the tively (each in two stages in cash) JV there. Support to be provided by amount to registered capital of Xiamen Torch Hi-Tech Industrial $120m ($80m in the first stage; Development Zone includes $40m in the second stage). Total preferential tax treatment and investment will be $160m. The final subsidies for the purchase of name of the limited liability com- MOCVD equipment for manufac- pany is subject to approval by the turing LEDs. relevant government authorities. The LED wafers and chips will be KFES Lighting’s board will consist used mainly for products made by of seven directors: three appointed the JV as well as satisfying the by Great Wall Kaifa, two by Epistar, internal demand of Great Wall Kaifa and one each by Evertop and and Evertop (and their respective Country Lighting. The chairman strategic partners), which will be and vice-chairman of the board will given priority in purchasing the JV’s be appointed by Great Wall Kaifa products. In the case that the JV and Epistar, respectively. The out-sources LED chip packaging, chairman will also be the legal rep- light sources or light source mod- resentative of the JV. ules, it will first purchase them All JV partners are based in China, from the JV partners and their except for Country Lighting (BVI) associates (provided that the terms and Epistar JV Holding (BVI), which are reasonable under the prevalent are investment holding companies market conditions). incorporated in the British Virgin Great Wall Kaifa says that, in view Islands. Taiwan-based parent firm of the great prospects for LED Epistar Corp makes LED epiwafers products, its board of directors and chips. Evertop designs and intends to eventually increase the makes LED-related components registered capital and total invest- and modules (as well as providing ment in the JV to $240m and after-sales services). Great Wall $490m, respectively, after comple- Technology develops and provides tion of the installation of the first 30 personal computers and informa- MOCVD reactors. Such an increase tion terminal products, storage in capital contribution and its timing products, power supply products, will depend on the market situation monitoring terminal, LCD TV prod- and will be carried out pursuant to ucts and EMS business. Great Wall the relevant authorization and Kaifa (which is listed on the approval procedures. Shenzhen Stock Exchange) manu- www.hkexnews.hk/listedco/ factures HDD magnetic heads, listconews/sehk/20101227/ remote control meters, tax-control LTN20101227003.pdf www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 48 News: LEDs Cree launches High-Efficiency White LED to cut initial lighting fixture cost LED chip, lamp and lighting fixture technology in the market,” claims maker Cree Inc of Durham, NC, John Edmond, director of advanced USA has announced commercial optoelectronics. “These attributes, availability of XLamp XP-E High combined with the performance Efficiency White (HEW) LEDs. The advantages of Direct Attach tech- new high-efficiency components nology, can translate to brighter, extend the light output and efficacy more reliable lamps and fixtures, of the XLamp XP-E LED family, developed at a lower cost.” enabling fixture designs that can Cree’s XLamp XP-E white LED. XP-E HEW LEDs deliver up to 148 use up to 50% fewer LEDs, which lumens in cool white (6500K) and can help drive down costs for nents. “By enabling designers to 114 lumens in warm white (3000K) fixture and bulb manufacturers use brighter, precisely optimized at 350mA. In addition to light out- while delivering the same system LEDs for each particular application, put and efficacy improvements, performance, says Cree. Cree is helping lower costs and fur- they have a reduced thermal resist- XP-E HEW LEDs are optimized to ther simplifying and shortening the ance of 6°C/W. XP-E HEW LEDs are lower initial costs for diffuse lighting LED fixture design cycle,” he adds. available in the same white varia- applications, such as LED replace- XP-E HEW LEDs are the first high- tions as XP-E LEDs, including ment lamps and downlights (e.g. power LEDs featuring Cree’s new Standard White, Outdoor White and an A-19 lamp that uses XP-E LEDs Direct Attach LED chip technology, 80-CRI White. could be re-designed to use half which delivers higher flux, lower The new LEDs are available now in as many XP-E HEW LEDs while forward voltage, and lower thermal sample and production quantities maintaining the same efficacy). resistance. “With 500% more die- with standard lead times. IES LM-80 “One of the major barriers to LED attach area and an order-of-magni- data for measuring lumen mainte- lighting adoption and design remains tude less die under-fill, Direct nance of LED light sources, for upfront cost,” says Paul Thieken, Attach technology is far more XP-E HEW LEDs, is targeted for director of marketing, LED compo- robust than any other LED flip chip availability in February.

IN BRIEF Cree launches first lighting-class LED arrays First all-LED Habitat Cree has launched what it claims engine design, says Cree. When home complete is the industry’s first lighting-class used in a traditional downlight LED array. application, luminaires based on Habitat for Humanity’s first house The XLamp CXA20 LED array is the CXA20 are delivering 38% lit entirely with LED fixtures and the first lighting-class array aimed more illumination than a 26W bulbs has been completed. Cree at accelerating the LED lighting compact fluorescent lamp (CFL) sponsored construction and its revolution and can enable a 60W or a 100W incandescent bulb, staff helped as volunteers. A-lamp equivalent while consum- while consuming just 14W, the Sited in Durham, the house ing just 11W, it is claimed. firm adds. includes Cree’s CR6 downlight, “They combined lighting-class “Cree continues to bring the and other products from MSi and performance, unequaled in the broadest family of lighting-class TESS featuring its LEDs. market, with an ease-of-use that LEDs to market, ensuring that As well as the local partnership will enable us to quickly develop lighting applications have opti- with Habitat Durham, in May both our new A19 lamp and down- mized LED light sources,” says Cree announced a three-year, light products,” comments PK Li, Norbert Hiller, Cree’s VP & general $1.5m pledge to provide LED director of product development at manager, LED Components. downlights for all new Habitat OPTILED Lighting International Ltd. The CXA20 LED array delivers homes built in the USA. With a single, uniform optical 1050lm at 11W, or 2000lm at 27W, “We thank Cree and its employees source, compact 22mm x 22mm with a 3000K warm-white color for their dedication to supporting footprint, and simple two-screw temperature. Samples are available and building this house,” says attachment, the CXA20 array now with standard lead times, Miguel Rubiera, executive director can simplify the manufacturing with production volumes targeted of Habitat for Humanity of Durham. process for users requiring a for late first-quarter 2011. www.habitat.org single component in their light- www.cree.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 49 SemiLEDs’ IPO to fund 6” LED wafer development

In its initial public offering of stock luminous efficacy (over 120lm/W) Taiwan, R&D expenses related to on the NASDAQ Global Select Market and longer lumen maintenance. Also, chip production based on 6” wafers, on 9 December, LED chip and com- sapphire reclaim allows reductions and general corporate purposes ponent maker SemiLEDs Corp of in both manufacturing cost and the (working capital and capital expen- Boise, ID, USA (which fabricates chips dependence on sapphire (for which ditures). The firm is already building in Hsinchu Science Park, Taiwan) the current short supply increases extra capacity via a chip-making sold 5.25 million shares at $17 each cost). The firm also believes that its joint-venture China SemiLEDs (above the planned $14.50–16.50). technology will aid its migration to (Xurui Guangdian Co Ltd) formed This raised $89.25m (9.7% more larger (6”) wafer sizes. in January in Foshan, Guangdong than the expected $81.4m). SemiLEDs makes LED chips mainly Province (paying $14.7m for a 49% Net proceeds were about $79m. for packagers in Asia (China, Taiwan) stake). Manufacturing facilities The underwriters’ over-allotment or distributors selling to packagers. should be operational after January. option for an extra 787,500 shares It also packages some chips into LED SemiLEDs may also acquire or takes total net proceeds to $91.4m. components for sale to distributors invest in complementary technolo- Founded in 2005, SemiLEDs’ and end-customers in select markets gies, solutions or businesses (or proprietary blue, green and UV (mainly for general lighting, includ- obtain rights to them). ‘metal vertical photon’ (MvpLED) ing street lights and commercial, To mark the IPO, on 10 December, chip design has a vertical LED struc- industrial and residential lighting). SemiLEDs’ chairman & CEO ture on a patented copper alloy base For fiscal 2010 (to end August), Trung T. Doan visited the NASDAQ (after sapphire substrate removal) profit was $10.8m on revenue of MarketSite in Times Square and that gives what is claimed to be the $35.8m, more than tripling from presided over the opening bell. best thermal resistance on the fiscal 2009’s $11.6m (which made SemiLEDs’ stock opened for trading market (0.4°C/W) — allowing better a loss of $3.7m). Gross margin under the symbol ‘LEDS’ at a price heat removal than retaining the grew from just 4.6% to 45.1%. of $24.01 (41% over the IPO price substrate — as well as electrical and IPO proceeds will be used for of $17). optical advantages such as greater expanding production capacity in www.semileds.com

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 50 News: LEDs Osram doubles green LED brightness for office projectors Market launch targeted for summer Osram Opto Semiconductors GmbH and removes the restriction that of Regensburg, Germany says that LEDs are suitable only for small the prototype of a green LED based projectors,” says Volker Mertens, on its OSTAR platform is twice as director Marketing Industry at bright as its predecessors and has a Osram Opto. Apart from providing luminous surface that is perfectly brilliant image reproduction with uniform. saturated colors, LEDs enable pro- The single-chip LED benefits from jectors to be virtually maintenance- the latest chip technology and a free because they have a life of green phosphor converter. Initial 30,000 hours. By contrast, high- samples are available, and finding intensity discharge lamps need to partners to develop appropriate LED be replaced after only about 400 office projectors is under way. hours. Projectors with LEDs also Osram expects the LED to be respond more quickly to on/off launched on the market in summer. switching, and support stepless Now that RGB LEDs have conquered dimming. They can therefore adapt the market for pico projectors, the very easily to ambient light condi- next segment in sight is that of tions and reduce energy consump- office projectors, says Osram Opto. tion. The color space can be set This has been enabled by the enor- OSRAM LEDs target office projectors. with a high degree of flexibility mous increase in brightness of thanks to electronic control of the green LEDs. The prototype with a provide the system brightness of individual colors. single chip achieves luminous flux 2000lm that is needed for office Due to new high-brightness green of 410lm and emits at a wave- projectors, reckons Osram Opto. LEDs, future projectors will be able length of 553nm. LED projectors will therefore be to produce images with diagonals Since a greater proportion of powerful enough for large diagonals of several meters, reckons Osram green than red or blue is needed in of more than 2m. Such applications Opto. The projected images them- a projector to produce white light, have previously only been possible selves will appear brighter for the the increase in brightness of the with projectors that use conven- same lumen value than those pro- green LED has a significant effect tional light sources such as high- duced by conventional light sources on the overall system brightness. intensity discharge (HID) lamps. thanks to the saturated colors of With these LED prototypes it is “Doubling the brightness of the the LEDs used, the firm adds. possible to produce systems that green LED is a giant leap forward www.osram-os.com

Wavien and Osram to co-develop recycling RGB LEDs for projection Wavien Inc of Valencia, CA, USA is can be achieved, it is claimed. “Wavien’s LED light recycling collaborating with Osram Opto Besides providing greatly enhanced technology offers outstanding Semiconductors to develop screen brightness, the unique brightness by recovering and red-green-blue (RGB) LEDs for recycling technology extends recycling high-angle light from the projection applications. The joint battery life for portable systems, LED that is normally wasted with effort aims to combine Osram’s and reduces the heat load for ease traditional LED coupling systems,” LED technology with Wavien’s of cooling, Wavien adds. states Wavien’s president & CEO proprietary LED recycling (RLT) to This performance improvement is Dr Kenneth Li, who is also the provide low-cost, high-output LED provided by either adding a simple inventor of the recycling technol- solutions for pocket projectors and reflector with an aperture to ogy. “This unique design enables pico-projectors small enough to be standard LED packages or by LED-based projectors to have integrated into cell phones. adding a unique imaging light pipe increased total brightness by Wavien’s RLT technology recap- with an aperture. The dimensions up to 100%,” he adds. “With tures light lost in standard optical of the apertures, which determine such improvements in cost and systems and recycles it back to the the amount of recycling, and the performance, projectors will be system output, transforming it total size of the reflector or light used in locations that were previ- back into usable light. An output pipe can be scaled to meet the ously not feasible.” improvement as high as 100% user’s needs. www.wavien.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: LEDs 51 Osram Opto launches TOPLED Compact with expanded color space coverage for LCD backlighting

After adapting its TOPLED packaging used in the display. A specially consistent over its operating life- technology to the special needs of optimized phosphor is used as time,” she adds. “The multi-white backlighting applications, Osram conversion material to ensure high TOPLED in particular exhibits a Opto Semiconductors GmbH of stability of the white point over linear response that sets new Regensburg, Germany has time and across a wide temperature standards.” launched the TOPLED Compact range. Also, a multi-white version The ultra-white version offers 5630 LED which, the firm says, can achieves 67lm/W for the same 13% higher efficiency, so fewer enhance monitor and TV screens of operating current and covers up to LEDs are required for screen back- all sizes. The 5630 is the second 120% of the sRGB color space. lighting units to achieve comparable product in the TOPLED Compact Both versions measure just 5.6mm brightness. family, joining the existing TOPLED x 3.0mm x 0.9mm in size and offer Osram Opto says that both Compact 4520. uniformly high quality in the prod- TOPLED Compact 5630 LEDs make Two new versions of the 5630 are uct and in the application, says it easy for monitor and TV manu- available with different coverage of Osram Opto. facturers to meet strict energy con- the color space (according to the “Televisions backlit by LEDs offer sumption standards of Energy Star sRGB standard) to meet various brilliant colors and high contrast,” 2010/2012 and EuP Class A requirements. says Winfried Schwedler, marketing 2010/2012. The ultra-white version has a manager, Consumer Applications, The new LEDs are flat-encapsu- luminous efficiency of 76lm/W at at Osram Opto. “The TOPLED Com- lated, have no integrated lens, and an operating current of 120mA. pact provides superb color space provide high efficiency for injection Color space coverage is up to 100% coverage, and its high white-point into light guides, says Osram Opto. sRGB, depending on the color filters stability ensures that colors remain www.osram-os.com

LM-80 reports released for OSLON SSL and Golden DRAGON Plus Osram Opto Semiconductors says tested at three different that it is one of the first firms to temperatures to assure have met the criteria of the LM-80 performance in various (lumen maintenance) test require- conditions. In addition to ments with two different product the two pre-defined tem- families: the ceramic OSLON SSL peratures of 55°C and and the Golden DRAGON Plus pre- 85°C, Osram has used a mold families of high-power LEDs. third temperature of For LED lamp, light engine and 105°C to simulate the luminaire manufacturers to receive requirements of highly an Energy Star certificate for their demanding applications. products, the US Environmental “Other products are Protection Agency (EPA) requires already in the test that the LEDs used in such prod- phase, so in the near ucts must comply with LM-80 test Both the OSLON SSL (left, with ceramic package) future all our high-power requirements. LM-80 test reports and Golden DRAGON Plus (right, with premold LEDs for general lighting provide evidence that the LED package) have completed the LM-80 test. will comply with LM-80 component can be assessed and testing requirements,” compared across all LED makers. Energy Star certificate from the says Artur Groesbrink, who is Inaugurated by the Illuminating EPA. responsible for standardization at Engineering Society (IESNA), the LM-80’s aim is to demonstrate, in Osram Opto. “Luminaire manufac- LM-80 test offers luminaire manu- an abbreviated test of 6000 hours turers will then have an important facturers a means of comparing (about 9 months), a consistent platform for Energy Star certifica- the performance of LEDs from dif- industry method of measuring tion by the EPA,” he adds. “The ferent suppliers based on reliable lumen maintenance of solid-state Energy Star certification is essential and comparable data. Successful lighting (SSL) sources, such as LED if companies want to market their completion of the LM-80 test is an packages, arrays and modules. products successful in the US.” essential step toward receiving an LM-80 specifies that LEDs are www.osram-os.com/standardization

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 52 News: Optoelectronics

IN BRIEF Osram Opto Semiconductors team Luminus’ LEDs light receives Beckurts Prize for developing live HDTV stage set direct green-emitting laser Luminus Devices Inc of Billerica, MA, USA, which develops and The annual Beckurts Prize of the manufactures large-chip Phlat- Karl Heinz Beckurts Foundation — Light (photonic lattice) LEDs for honoring outstanding scientific and illumination applications, says technical achievements giving rise that its CBM-380-RGBW product to discernible impetus for industrial used inside VARI*LITE VLX Wash innovations in Germany — has Luminaires are lighting the stage been awarded to Osram Opto for NBC’s TV program ‘America’s Semiconductors GmbH of Regens- Got Talent’. burg, Germany for “pioneering “I am constantly evaluating new work in researching direct green Prize winners (left to right) Stephan products to improve my shows semiconductor lasers” (which can Lutgen, Désirée Queren and Adrian and LEDs are the future in many open up new markets such as Avramescu of Osram Opto. industries, including entertain- ultra-compact mobile RGB laser ment,” says Kieran Healy, lighting projectors, says Osram Opto). designer for America’s Got Talent. The availability of very small “Unfortunately, my experience and low-cost red, blue and green until now with LED lighting semiconductor lasers is crucial for demonstrated it was not ready for large-scale diffusion of RGB laser primetime TV,” he adds. “However, projection, says the firm. The laser by incorporating the Luminus diodes enable the production of big-chip LEDs into the VLX Wash low-cost, compact and efficient Luminaire, the entertainment pico-projectors, which can be incor- industry now has remarkable, porated into mobile devices such as next-generation lighting.” smart-phones or digital cameras. Containing seven CBM-380-RGBW Due to the beam properties of LEDs, the VLX Wash Luminaire lasers, the projectors have unlimited delivers total light output of depth of sharpness and extremely 14,000 white lumens with an LED high resolution, beyond that of lifetime of more than 10,000 hours LED solutions, adds Osram Opto. Osram Opto's direct green laser diode. at maximum output. Also, the low spectral bandwidth “It’s gratifying to see the contin- of semiconductor lasers enables supported by the project MOLAS ued validation of the ground- life-like display of colors plus sharp (technologies for ultra-compact and breaking design from leading contrast. mobile laser projection systems) as lighting designers and industry The firm only started developing part of the ‘Optical components and awards,” says Don McDaniel, direct blue laser diodes for RGB systems for volume markets’ fund- director, global entertainment, at laser projection in 2006. These are ing initiative of the German Federal Luminus. “VLX Wash Luminaires now being used in the first devices Ministry of Education and Research. with Luminus’ big-chip LEDs pro- on the market. Based on the find- Osram also works on nitride lasers vide Healy and other lighting ings for the blue laser using the in collaboration with several designers with color uniformity indium gallium nitride (InGaN) German universities and research and beam control not previously material system, the team managed institutes (Désirée Queren, for available with solid-state lighting within a short time to achieve example, wrote her dissertation technology,” he claims. emission at green wavelengths based on a collaboration with the “I love the beautiful range of beyond 500nm. In 2009, it University of Erlangen). The rich color that the VLX produces achieved optical output power of foundation for the results with the with the LEDs from Luminus,” more than 50mW from a direct semiconductor lasers was laid as Healy adds. “It has a great flat green laser diode emitting at a early as 1998 through development field which is very important wavelength of more than 515nm. work with ultraviolet (UV) lasers, in for TV.” The development of blue and particular in the project ‘Blue laser www.vari-lite.com green laser diodes and research based on GaN for innovative www.luminus.com into the miniaturization of systems storage systems’. in mobile laser projection is www.osram-os.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com

54 News: Optoelectronics Soraa demos green lasers for >20lm pico projectors with minimal speckle UCSB spin-off displays green and blue lasers at CES

Soraa Inc (formerly Kaai Inc) of display generating technologies, Silicon Valley and Santa Barbara. Goleta CA, USA, which is commer- including LCOS, scanning MEMS Soraa’s lasers are based on cializing green and blue laser mirrors DLP, and other diffractive indium gallium nitride (InGaN) diodes, says it has demonstrated approaches. The new green devices technology and are fabricated on green laser diodes (LDs) suitable also complement Soraa’s previously non-polar and semi-polar GaN for >20 lumen pico projectors. The announced blue 450nm laser substrates. The firm says that its direct-emitting green lasers have diodes, which already exhibit what direct-diode green and blue lasers produced images that exhibit much is claimed to be industry-best offer improvements in perform- reduced speckle compared with efficiency and power. ance, size, weight and cost over conventional green lasers based on Soraa was founded in 2008 (as conventional gas or solid-state second-harmonic generation (SHG). parent company to Kaai Inc) by lasers for consumer projection Soraa’s green laser diodes output University of California Santa Bar- displays, defense pointers and illu- more than 75mW of continuous- bara (UCSB) professors Shuji minators, biomedical instrumenta- wave (cw) power in the 520–525nm Nakamura, Steve DenBaars, and tion and therapeutics, and range, are single spatial mode and Jim Speck. The management team industrial imaging applications. multi spectral mode. They can also is led by former Intel and Samsung Soraa displayed green and blue be directly modulated at the high executive Eric Kim, and consists of laser diodes in its private suite at speeds required for high-resolution commercial laser industry veterans. the Consumer Electronics Show displays with minimal speckle. Soraa is funded by Khosla Ventures (CES 2011) in Las Vegas, NV The firm says that the laser diodes and NEA, and operates vertically (6–9 January). are suitable for all pico-projector integrated fabrication facilities in www.soraa.com MicroVision and Pioneer to jointly commercialize laser display products

MicroVision Inc of Redmond, WA, MicroVision’s patented PicoP laser president & CEO Alexander Tokman. USA, which provides ultra-miniature scanning technology. Both are key “By combining our respective laser display technology, has pieces of the next-generation PicoP market and product development entered into a memorandum of display engine that MicroVision capabilities, and leveraging best understanding (MOU) with Pioneer says will offer OEMs commercial practices in manufacturing, Micro- Corp, an original equipment manu- advantages in price, size, power Vision and Pioneer can accelerate facturer (OEM) of audio, video and and performance for embedded introducing next-generation laser computer equipment for the home, solutions ranging from cell phones display products while reducing the car and business markets, to and eyewear to airplanes and total cost for both companies in develop, manufacture and distribute automobiles. getting there,” he believes. display engines and display engine The MOU establishes the frame- Both Pioneer and MicroVision subsystems for consumer and work of a future manufacturing and were recognized as finalists for in-vehicle head-up displays (HUDs) commercial distribution agreement last October’s CEATEC Innovation using MicroVision’s PicoP pico- for PicoP-based display engines to Awards for 2010. Pioneer was rec- projector laser display technology. be used in consumer, after-market ognized in the Automotive category Earlier in 2010, the two firms and embedded automotive products. for its demonstration of a HUD executed a joint development Pioneer is targeting commercial using laser scanning technology agreement to develop two critical introduction of an in-vehicle HUD provided by MicroVision, and components of the PicoP display using PicoP technology into the MicroVision was recognized in engine: a laser light source module consumer market in 2012. the Components category for its using direct red, blue and green “Pioneer has a strong history of SHOWWX laser pico projector, pow- lasers and a separate display bringing cutting-edge technologies ered by the PicoP display engine. engine subsystem based on to mass markets,” says MicroVision’s www.microvision.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Optoelectronics 55 Putting on a bow-tie for higher-energy nitride laser performance Sony and Tohoku push self-pulsating laser towards 3D optical storage

Japan’s Sony Corp and Tohoku Uni- versity’s New Industry Creation Hatchery Center (NICHe) have added bow-tie waveguide structures to increase the energy output of nitride semiconductor self-pulsating laser diodes (SP-LDs) to 310 pico- Joules/pulse (pJ/pulse) [Hideki Watanabe et al, Appl. Phys. Express, vol3, p122103, 2010]. The researchers are seeking laser diode technology that can meet the needs of next-generation volumetric (i.e. three-dimensional rather than two-dimensional) optical storage based on multi-photon absorption. Memory media for such technology has already been developed, but operation at present needs large, expensive solid-state lasers, such Structure of GaN-based bow-tie SP-LD. as those using titanium-doped sapphire, which are only found in of laser diode failure). The p-type ohmic electrode was research laboratories. The Sony–NICHe group has previ- removed between the gain and the The Sony–NICHe group has previ- ously produced a non-tapered SP-LD SA to electrically separate these ously succeeded in operating volu- structure with 10W peak power and regions. The front and rear facets metric optical storage using a laser pulses of energy 150pJ. Using the were coated with Al2O3 and system consisting of two parts: bow-tie structure, this has been TiO2/Al2O3 dielectric multi-layers, a mode-locked gallium nitride (GaN) increased to 20W peak and offering reflectivities of 5% and laser diode and a semiconductor 310pJ/pulse. A previous record 95%, respectively. The laser diode optical amplifier (SOA) to generate (1994) for bow-tie laser diodes in chip was put in a 5.6mm-diameter 100W peak power. High power is another material system obtained can and, during testing, was kept needed to achieve the multi-photon 7W peak and 100pJ/pulse. at 25°C using a Peltier cooling absorption process that is required The Sony–NICHe SP-LD was system. to create the changes in the storage grown on n-GaN using MOCVD. The Peak operation was obtained with medium. Also, a short wavelength double quantum well (DQW) active a gain current of 550mA and an SA is desired to increase storage region consisted of Ga0.92In0.08N reverse-bias of –10V. The optical densities. wells and Ga0.98In0.02N barriers. pulse duration was 15.5ps and the Rather than using multi-stage The ridge waveguide (WG) repetition rate was 0.84GHz. The systems, a single laser diode that structuring was performed using average output power at a lasing provides the necessary energy is reactive ion etching (RIE). The cavity wavelength of 406nm was 260mW. sought. With this in mind, the was 600m long, and the GaN- Measurement of the near-field Sony–NICHe group has a developed based saturable absorber (SA) pattern at the front facet indicated a self-pulsating laser diode (SP-LD) region had a ridge WG that was that a single mode was generated. with a bow-tie ridge waveguide (WG) 1.5m wide and 10m long. Although the results obtained are structure (see Figure). The hope The bow-tie flared regions had a promising, wider bow-tie structures was to boost output powers over width at the two facets of up to are expected to make it difficult to  SP-LDs with straight WGs (<10W). 5 m (Wflare). These regions were maintain a single tranverse mode, The ‘bow-tie’ reduces field densities 292m long. Laser diodes with control of which needs further  in the output facet regions, suppress- 2.5 m Wflare and non-tapered WGs investigation. ing gain saturation and catastrophic were also produced for comparison http://apex.jsap.jp/link?APEX/3/122103 optical damage (a common cause purposes. Author: Mike Cooke www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 56 News: Optoelectronics AFRL engineer receives Harold Brown Award for GaAs-based terahertz imaging sources

Dr Candace Lynch, a senior scientist tems in intelligence, surveillance, at Hanscom Air Force Base, reconnaissance, precision engage- Massachusetts, has received the ment and electronic warfare, 2010 Harold Brown Award for her Jerome said. research in pioneering new infrared Having published more than 20 technology that will augment aircraft journal articles and eight confer- defense and impact numerous ence presentations, Lynch received Defense Department systems. her Bachelor of Science from Lynch strengthened aircraft pro- Massachusetts Institute of Technol- tection from heat-seeking missiles ogy and her doctorate of philoso- by developing counter-measure Secretary of the Air Force Michael phy from Brown University in device technology involving laser Donley (left) presents the 2010 Providence, RI. material, specifically with the Harold Brown Award to Candace The Harold Brown Award recog- growth of orientation-patterned Lynch (right) at the Pentagon. nizes significant achievement in gallium arsenide. (US Air Force photo/Jim Varhegyi). R&D that have led to or demon- The research physicist extended strated the promise of a substantial her technology to generate science with a focus on national improvement in operational effec- terahertz sources used in future security,” says Dr David Jerome, tiveness of the US Air Force. The imaging systems that enable the director of the sensors directorate in award’s namesake was a physicist warfighter to see through brown- the Air Force Research Laboratory who served as Air Force secretary out conditions during helicopter (AFRL) at the Wright-Patterson from 1965 to 1969 and as Defense landings or to image concealed Air Force Base, Ohio. secretary from 1977 to 1981. weapons through clothing. Lynch’s efforts as part of the Lynch is the first female recipient of “Lynch’s technology breakthrough sensors directorate supported the the award since the program began is not only a national asset, but a science and technology necessary in 1969. testament to her dedication to for superior US air and space sys- www.afrl.af.mil

Opnext offers first built-in monitor photo-diode on high-power 637nm laser diode for industrial and military applications

Optical module and component constant laser output power in toward producing laser diodes that maker Opnext Inc of Fremont, NJ, construction systems and bio- are high power, while consuming USA, which offers a family of medical and other applications that less energy,” he adds. high-power, low-operating-current experience changes in their operat- Opnext offers laser diodes red and infrared laser diodes, says ing environments. The HL63142DG spanning 635–850nm. Its red and that customers are currently operates at a temperature range up infrared laser diodes are proven to sampling its new HL63142DG to 50ºC and 120mW in the 637nm consume a low operating current, 637nm, 120mW high-power red wavelength band in a 5.6mm- which extends battery life while laser with a built-in monitor diameter TO industry-standard maintaining the integrity of the photo-diode for use in industrial package. laser diode power in applications and military applications. “We expect to see initial demand such as gun sights, rangefinders, Using a proprietary design, the for this high-quality laser with line leveling construction systems HL63142DG built-in monitor built-in monitor photo-diode to and biomedical applications. photo-diode allows system design- come from military target Opnext is demonstrating ers to control the optical perform- acquisition-type applications where end-application products that use ance by monitoring the photo-diode precise laser control is an important its laser diode technology at the current and adjusting for tempera- performance parameter,” says Photonics West 2011 conference ture and power variants in real time. Tadayuki Kanno, president of (25–27 January) in San Francisco, Performance monitoring capabilities Opnext's devices business unit. CA, USA. are essential for maintaining “The industry trend is moving www.opnext.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Optoelectronics 57 Terahertz QCL operated at higher temperature Scattering-assisted injection allows emission at 1.8THz up to 163K Terahertz (THz) rays — radiation Like existing terahertz lasers, between microwaves and infrared the new laser is also built from rays on the electromagnetic spec- gallium arsenide (GaAs) and trum — are a promising means of aluminum gallium arsenide detecting explosives, but they’ve (AlGaAs), deposited in alternating proven hard to generate cost effec- layers. Each loss of energy occurs tively. So far, solid-state lasers in a different layer, and the thick- (quantum cascade lasers, or QCLs) ness of the layer determines how have been unable to produce THz much energy the electron loses. rays unless they’re supercooled, “This design technique circumvents which makes them impractical for one of the problems that have been mass deployment. limiting the temperature,” Williams Some researchers had even makes it harder to coax electrons says. “Going to this new design begun to suspect that a room-tem- into exactly the right state for path may give lots of benefits that perature, solid-state terahertz laser photon emission. Lower tempera- will take us higher and higher in was physically impossible. The tures, in turn, allow for more temperature,” he adds. “Does this performance of experimental precise control of the electrons’ result say that we’re right around terahertz lasers built in the lab has energy levels. “In physics, there’s a the corner from getting to room suggested a linear correlation standard way of thinking, that temperature? Probably not. But it between operating temperature temperature equals energy, and if points a possible path, and it raises and frequency, in which halving the you want to go to smaller energies, a lot of hope.” frequency requires roughly halving and see quantum effects, you A decade ago, it was widely believed the temperature. This led some to better go to smaller temperatures,” that terahertz rays could provide a speculate that frequency and says Benjamin Williams, director of safer, more useful replacement for temperature are linked by some UCLA’s Terahertz Devices and x-rays during airport security screen- fundamental physical law, i.e. a Intersubband Nanostructures ing. Not only can they penetrate strict proportionality that couldn’t Laboratory, who wasn’t involved in clothing but, unlike x-rays, they also be violated. the research. “And that’s the type interact with a wide range of chemical However, researchers at Massa- of thinking that informs this idea compounds in distinctive and chusetts Institute of Technology about this limit.” detectable ways. Hu says, however, (MIT) and Sandia National Labora- To address the problem of shrink- that the frequencies of terahertz rays tories’ Center of Integrated Nano- ing gaps between energy states that are good for identifying chemi- technologies have now reported a at low frequencies, Hu — together cals can’t penetrate materials even solid-state terahertz laser that with postdoc Sushil Kumar (now at as thick as a suitcase wall, and they operates at nearly twice the Lehigh University), graduate student don’t reflect well off of human flesh, temperature that that proportional- Ivan Chan, and Sandia’s John Reno so even after penetrating clothing, ity would have predicted — fabricated a laser in which the they might never reach a detector. (Nature Physics (2010) applied voltage causes electrons to They could, however, detect traces doi:10.1038/nphys1846). That jump into an even higher energy of explosives — a few molecules of temperature is still too low to be state than usual. Through scattering, a chemical wafting from a shoe practical for airport scanners or the electrons then release some of bomb, for instance, or clinging to devices in a bomb squad’s tool kit, that energy as physical vibration the side of an abandoned vehicle — but it suggests that the quest for rather than light. However, they with extraordinary sensitivity. room-temperature terahertz lasers remain in an excited state and Hu believes that, when room-tem- shouldn’t be called off just yet. release most of their remaining perature terahertz lasers are ulti- “There are many naysayers saying energy as photons. mately developed, they will be used that they can never be made oper- By using such a scattering-assisted in conjunction with other existing ational at room temperature,” says injection scheme, rather than the and emerging technologies. “There Qing Hu. “We break this psycho- resonant-tunneling injection is no single silver bullet,” he says. logical, empirical barrier by a factor mechanism of all previous terahertz “There have to be as many modalities of two. No one will say that it’s a QCLs), the researchers were able as possible to cross-correlate, in order barrier anymore.” to achieve lasing at frequencies to increase sensitivity and, more At low frequencies, the gaps below 2THz (specifically, a 1.8THz importantly, to reduce false alarms.” between an electron’s energy QCL operating at temperatures up www.nature.com/nphys/journal/ states become smaller, which to 163K). vaop/ncurrent/full/nphys1846.html www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 58 News: Optical communications Luxtera sells active optical cable business to Molex Silicon photonics firm focusing on chip development and supply

High-speed fiber-optic interconnect data rates of firm Molex Inc of Lisle, IL, USA has 10Gbps, 14Gbps, acquired the active optical cable 25Gbps and above. (AOC) business of fabless CMOS “The combination silicon photonics firm Luxtera of of our interconnect Carlsbad, CA, USA. expertise with Luxtera will transfer all aspects of Luxtera’s long-reach, its existing and future AOC business low-power and low to Molex, including current QSFP+ bit-error-rate (quad small-form-factor pluggable) optical solutions will 40Gbps Ethernet and InfiniBand enable us to offer products and customers, adding the highest level QSFP AOCs to Molex’s existing port- of photonics folio of active optical connectivity Luxtera’s Blazar active optical cable. integration and products. performance Founded in 2001 by researchers consumer electronics, industrial, available,” claims Busch. and technology managers drawn automotive, medical, military, The partnership aligns with the from the communications and lighting and solar. strategic direction and long-term semiconductor industries and The strategic acquisition will help goals of both companies, com- funded by venture capitalists includ- Molex boost its share of the global ments Luxtera’s CEO Greg Young. ing August Capital, New Enterprise fiber-optic assemblies market, says “This agreement is a milestone Associates, Sevin Rosen Funds and Doug Busch, VP & general manager validating the growing commercial Lux Capital, Luxtera claims to be of Molex’s Global Fiber Optic significance of silicon photonics,” the first firm to overcome the com- Products Group. he adds. “Luxtera will continue to plex technical obstacles involved The deal includes an exclusive accelerate its growth by focusing with integrating high-performance agreement for Luxtera to develop on our core silicon photonics tech- optics directly with silicon electronics and supply chip-sets for future nology platform, while at the same on a mainstream CMOS chip, Molex products based on silicon time expanding the reach of our bringing direct ‘fiber to the chip’ photonics technology, including technology to global markets and connectivity to market. next-generation 14Gbps and customers. Partnering with Molex Established in 1938, Molex operates four-channel 25Gbps products for will help us to bring the benefits of 39 manufacturing locations in 16 the 100Gbps Ethernet and InfiniBand silicon photonics to customers countries, and delivers complete markets. The firms will work worldwide.” interconnect solutions for markets together on future product planning www.molex.com including datacoms, telecoms, to provide interconnect solutions at www.luxtera.com

Opnext makes chairman Bosco interim CEO following resignation of Bouchard

Optical module and component to start a search for a in 2007,” comments Bosco. “Gilles maker Opnext Inc of Fremont, NJ, permanent successor made numerous operational improve- USA says that Gilles Bouchard to Bouchard in first- ments to the company and helped has resigned as CEO & president half 2011. “Opnext set the future direction,” he adds. as well as board member. has an experienced “Bosco has been an integral part Harry Bosco assumes the post of management team of the company’s leadership since CEO & president on an interim basis, that will ensure the 2000,” says co-chairman Dr David while also remaining non-executive transition is seamless Lee. “He is a proven leader with chairman of the board of directors. Outgoing CEO to our customers,” deep knowledge of our company Prior to becoming chairman in April Bouchard. says Bosco. and the industry, and he has played 2009, Bosco had been CEO & presi- “We are grateful to a key role in positioning Opnext for dent since Opnext’s formation in Gilles for all of his contributions to growth,” he adds. November 2000. The board expects Opnext since he joined the company www.opnext.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Optical communications 59 Fine-patterned SiGe halves power consumption of optical waveguide switch in network equipment

At the 23rd Annual Meeting of the silicon, the electron- IEEE Photonics Society (PHO 2010) accumulation effi- in Denver, CO (7–11 November), ciency in fine silicon Japan’s Fujitsu Laboratories Ltd is waveguides is low, reporting that it has been able to necessitating more halve the power consumption of an current to achieve optical waveguide switch based on sufficient electron silicon photonics through what is accumulation, claimed to be the first use of fine- increasing power patterned silicon germanium (SiGe) consumption. for this application, rather than Fujitsu has there- conventional silicon (Si). The firm fore developed what says that the achievement should Cross section of refractive-index modulator. it reckons is the first enable high-speed optical switches optical switching ele- capable of operating across a wide spurred ongoing R&D for next- ment that uses fine-patterned SiGe range of wavelengths, while featur- generation networks. in the refractive-index modulator ing the world’s lowest power A optical waveguide switch is a (see Figure). Forming fine-patterned requirements. design that arrays multiple optical SiGe (which has a narrower energy Fujitsu says that its new technology switching elements in series, bandgap than silicon) on top of will help to contain power consump- between an optical-signal input silicon allows more efficient electron tion while supporting large-volume point and output point. By combin- accumulation, and hence less network traffic, enabling high-end ing the operations of each optical power is required for switching. services linking multiple cloud switching element, a desired optical Prototype optical switch devices networks and ultra-high-definition signal path can be created. developed by Fujitsu operated on video-conferencing, among other An optical waveguide switch 1.5mW of power (about half the applications. employing silicon photonics uses power required for conventional With the spread of data-intensive well-established silicon fabrication fine-patterned silicon optical network services such as cloud technology, allowing inexpensive switching elements), representing computing and ultra-high-definition mass production. Furthermore, what is claimed to be the lowest video distribution, the volume of optical switch devices based on power requirement in the world for data being transmitted over net- nanometer-scale waveguides and an optical switching element capa- works looks set to rise continu- control electronic circuits can be ble of high-speed operation across ously. Accordingly, the amount of aligned in large numbers on the a wide range of wavelengths. electricity consumed by networking same substrate, so large-scale Fujitsu says that it aims to proceed equipment in 2025 is predicted to optical switches can be fabricated with the development of large-scale be 13 times the 2006 figure if no compactly, measuring just a few integration as well as the integration energy-saving measures are taken centimeters squared. technology for control electronic (according to the Japan Ministry of Large-scale optical-waveguide circuits, in order to realize large- Economy, Trade and Industry’s switches operate multiple optical scale optical switches enabling ‘Green IT Initiative’ report, Decem- switching elements simultaneously. next-generation networks. ber 2007), leading to concerns However, the heat that this Part of Fujitsu’s research was about potentially serious energy generates can degrade device per- undertaken as part of the ‘Vertically shortages in the future. formance, necessitating the lowest Integrated Center for Technologies Conventionally, switching between possible power consumption for of Optical Routing toward Ideal optical network paths requires that each optical switching element. Energy Savings’ (VICTORIES) signals be converted from light to With optical switching elements, project, under the program electricity and back again to light in the application of an electrical ‘The Formation of Innovation Center order to be processed, requiring current to the refractive-index for Fusion of Advanced Technologies’ considerable power. An optical modulator causes electrons to sponsored by the Special Coordina- switch that processes optical signals accumulate in fine waveguides, tion Funds for Promoting Science as they are — without the need for which modulates the refractive and Technology, of Japan’s Ministry conversion to electricity — would index and switches the output port. of Education, Culture, Sports, therefore greatly reduce its power With conventional optical switching Science and Technology (MEXT). requirements. This issue has elements made using fine-patterned http://jp.fujitsu.com/labs/en www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 60 News: Optical communications GigOptix and Civcom win US–Israel bi-national grant to develop highly integrated 40Gb/s transponder

GigOptix Inc of Palo Alto, CA, USA dards and Technology (NIST). will be significantly smaller to the and Civcom Devices and Systems Ltd “The BIRD Foundation acts to discrete approach (smaller than one of Petach-Tikva, Israel, which man- encourage collaboration between of the competing lithium niobate ufactures dynamic opto-electronic Israeli and American companies in modulators). Furthermore, components and modules, have various fields of technology,” says its GigOptix’s broadband RF driver and been awarded a US–Israel executive director Eitan Yudilevich optical modulator teams will opti- Bi-national Industrial Research & Ph.D. “Consumers’ use of smart- mize the interoperability between Development (BIRD) Foundation phones and the advent of cloud the modulator and the driver to grant to develop low-power, highly computing are requiring network enable further reduction in power integrated components and modules operators to upgrade to faster consumption and overall footprint for next-generation 40Gb/s and 40Gb/s infrastructure to keep pace of the electro-optic transmission 100Gb/s communication systems. with increasing bandwidth demand,” system. This size and power reduc- The grant will initially help to fund he adds. “GigOptix and Civcom are tion will enable Civcom to shrink the development of a small form combining outstanding US and the size of its 40G RZ-DQPSK factor (SFF) 40Gb/s RZ-DQPSK Israeli human resources and tech- transponder to the size of current transponder. GigOptix will develop nologies to develop an industry- 10G transponders. an integrated 40Gb/s RZ-DQPSK leading telecommunications solution “The BIRD Foundation has helped optical modulator and the corre- to address these demanding net- many technological collaborations sponding broadband amplifiers to work operator requirements.” come to fruition between US and drive the modulator, while Civcom Under the grant, GigOptix will Israeli companies,” states GigOp- will develop and manufacture the leverage its Thin Film Polymer tix’s chairman, CEO & president 40Gb/s RZ-DQPSK SFF transponder. on Silicon (TFPS) technology to Dr Avi Katz. “Close cooperation The BIRD Foundation provides implement an integrated 40Gb/s with Civcom, an optical transponder free assistance in locating strategic RZ-DQPSK optical modulator in a pioneer, on this innovative 40Gb/s partners from both countries for single package. Currently, 40Gb/s transponder will significantly help developing joint projects, working RZ-DQPSK optical modulation is in improving our TFPS technology in cooperation with the chief scien- implemented using two separate and accelerate the time to market tist’s office at the Ministry of Trade, lithium niobate modulators: the of our innovative solutions.” Industry and Employment in Israel, first implements RZ modulation www.civcom.com and with the US Commerce Depart- and the second DQPSK modulation. www.birdf.com ment's National Institute of Stan- The integrated GigOptix solution www.gigoptix.com

Solekia to distribute GigOptix’ ASICs in Japan GigOptix Inc of Palo Alto, CA, USA, Co will continue be the sole distrib- reputation for providing dedicated which designs modulator and laser utor for GigOptix’ optical and RF customer service and superior drivers and transimpedance sales in Japan. technical support to the ASIC amplifier (TIA) ICs based on III-V “They have excellent technical customers will greatly enhance materials as well as polymer elec- expertise and deep customer GigOptix’ cost-effective solutions tro-optic modulators for fiber-optic relationships, with over 20 years and best-in-class service for the communications systems, has of experience in providing ASIC Japanese market,” he adds. signed Solekia Ltd (a distributor of solutions to Japanese customers, “This partnership will enable us to electronic components and infor- particularly in the industrial and provide our customers with an mation technology) to expand its medical markets,” comments enhanced and cost-effective portfolio application-specific integrated circuit Anil Chaudhry (GigOptix’ director of Structured ASIC and Standard product distribution in Japan. of marketing for ASIC products) Cell solutions for the industrial and Solekia will offer GigOptix’ about Solekia. medical applications,” says Takashi Structured ASIC devices and GigOptix has taped out more than Miura, general manager, System Standard Cells along with local 2000 designs. “Our Structured Business Group of Solekia in Japan. design and sales support to ASIC technology is particularly “GigOptix’ ASIC technology and Japanese customers, focusing suited for the industrial and market focus closely aligns with particularly on the industrial and medical applications in Japan,” Solekia’s expertise,” he concludes. medical markets. Midoriya Electric reckons Chaudhry. “Solekia’s www.solekia.com/English

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Optical communications 61

3S grows revenue 9% in fiscal 2010 IN BRIEF For its fiscal 2010 (to end-June), expects 10% growth in revenue due Finisar raises 3S Photonics of Nozay, France, to the recovery of the submarine $118m on close of which makes laser chips, optical market from the economic slow- discrete modules and passive down in 2009 as well as the intro- public offering components for telecom networks, duction of new products dedicated has reported revenue of €25.22m, to the optical transmission market. Fiber-optic communications up 9% on €23.04m in fiscal 2009 The past year was also marked by component and subsystem (which had been down 10% on February’s acquisition of optical maker Finisar Corp of Sunnyvale, fiscal 2008). telecom component firm Avensys Inc CA, USA has closed its public 3S notes that, due to increasing of Montreal, Quebec, Canada. offering of 4,140,000 shares of global Internet traffic, the terrestrial “We already achieved synergies its common stock (announced and submarine long-distance trans- between both companies in terms on 20 December) at a price of mission market has grown strongly. of product development, and the $28.54 per share. The firm has benefited from these strategy of locating our Canadian This included 3,600,000 shares favorable conditions, since it has subsidiary in North America is an originally offered plus 540,000 80% market share in submarine important building block for our additional shares sold upon pumps, and has won 7% of the ter- international expansion,” says the full exercise of the over- restrial pump market in two years. president & CEO Alexandre Krivine. allotment option by the sole Due to a rise of 10% in overall Synergies are expected to boost underwriter Credit Suisse operating revenue from €32.6m to growth in revenue to US$70m for Securities (USA) LLC. €36m, operating profit has soared the consolidated group. Total gross proceeds of the from €0.11m in 2009 to €1.98m in “Next year, we will also concen- offering are $118,155,600. 2010. Net profit was €2.2m, raising trate on our expansion policy and Net proceeds to the company are the firm’s equity capital from €20m strategic partnerships in order to $117,900,000, after deducting to €22.28m. strengthen our international posi- estimated offering expenses. For fiscal 2011, 3S aims to reduce tion,” adds Krivine. The firm intends to use the operating expenses by €1m, and www.3Sphotonics.com proceeds for general corporate purposes, including working capital. Part of the net proceeds JDSU recruits SVP business services may be used for the repurchase and/or repayment of outstanding Optoelectronic chip and module nologies, and held senior executive indebtedness, which may include maker JDSU of Milpitas, CA, USA positions with Synopsys Inc, a portion of its outstanding says that Rex Jackson has joined its AdForce Inc and Read-Rite Corp. convertible notes. executive management team as Jackson has experience in areas The firm may also use part of senior VP, business services, report- key to JDSU’s growth plans, says the proceeds to acquire or invest ing to president & CEO Tom Waechter Waechter. “He brings additional in complementary businesses, and leading JDSU’s corporate and depth to our senior management products or technologies business development, corporate team that will help JDSU efficiently (although it has no present marketing, legal and information scale as we address expanding agreements or commitments technology organizations. growth opportunities around the with respect to any such acquisi- The firm says that Jackson has globe,” he adds. tions or investments). a successful track record as a The firm has also promoted Finisar’s previous public offering, strategic planning executive and Andrew Pollack (who has been of 7,200,000 shares initially, leader of business-enabling corpo- leading its legal team on an interim closed on 22 March (after being rate functions. basis since July) to general counsel. raised to 8,640,000 shares, He joins JDSU from Symyx Tech- Pollack has been a member of plus 1,296,000 shares in over- nologies, where he served as exec- JDSU’s legal department since 2000. allotments). At $14 per share, utive VP & chief financial officer with “He has contributed to JDSU’s that raised proceeds of $139.1m responsibility for finance, legal, IT transformation in many ways while gross ($131.2m net). and other corporate functions, and directing legal strategy for mergers Subsequently, in September, drove the firm’s acquisition of MDL and acquisitions, securities and Finisar acquired the transceiver Information Systems Inc and the compliance, commercial contracts, manufacturer Broadway Net- recent merger with Accelrys Inc. litigation and intellectual property works Ltd. Previously, Jackson was senior VP management,” says Waechter. www.finisar.com & general counsel for Avago Tech- www.jdsu.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 62 News: Optical communications Emcore’s loss slashed as quarterly revenue grows 16% ITC parallel optics ruling to hit sales next quarter For fiscal 2010 (to end-September), while customers migrate to newer Co Ltd in China. All activities for Emcore Corp of Albuquerque, NM, technology platforms. concentration photovoltaic (CPV) USA, which makes components and Nevertheless, net loss has been receivers, modules, and systems at subsystems for the fiber-optic and cut from $16.3m a year ago and both San’an and Emcore’s Langfang, solar power markets, has reported $9.2m last quarter to just $0.9m. China manufacturing facilities will revenue of $191.3m, up 8% on For full-year fiscal 2010, net loss was be transferred to Suncore. fiscal 2009’s $176.4m. By segment, $23.7m, cut from $138.8m in fiscal While Emcore will continue to make Fiber Optics was $121.7m (up 7% 2009, due partly to gross margin CPV cells in Albuquerque, Suncore on $114.1m) and Photovoltaics was improving from –3.6% in to 26.5%. will serve as its low-cost/high-volume $69.6m (up 12% on $62.3m). During the quarter, cash and cash manufacturing base for receivers Fiscal Q4 revenue was $54.1m, up equivalents rose from $14.4m to incorporating its CPV cells, and for 16% on $46.6m last quarter and $19.9m, and working capital rose modules and systems to support 34% on $40.5m a year ago. By from $33.1m to $34.9m. Compared both Emcore’s and San’an’s world- segment, Photovoltaics rose 30% with consuming $29.6m of cash in wide sales efforts. With production on $15.1m last quarter to $19.7m fiscal 2009, in fiscal 2010 Emcore expected to begin in September, (36% of total sales, up from 33%), generated $3.4m in cash, due mainly Suncore will start work supplying driven mainly by base solar power to improved operating performance immediate demand for 12MW of generation products. Fiber Optics and working capital management systems for San’an’s current cus- rose 9% from $31.5m to $34.4m as well as an increase in customer tomers and 3MW of components for (64% of sales, down from 67%), deposits and advanced payments. projects sourced by Emcore. Also, driven mainly by higher sales of During fiscal Q4, order backlog Emcore and San’an are pursuing integrable tunable laser assemblies rose 6% from $67.6m to $71.3m, multiple CPV project opportunities (ITLAs), active optical cable (AOC), including $52.9m for Photovoltaics in China’s emerging market, includ- and CATV products. This was despite (up 25% on $42.5m, due to signifi- ing the 280MW solar energy plan in the effects of the US International cant wins in the satellite business) six western regions announced by Trade Commission (ITC) issuing a and $18.4m for Fiber Optics (down the Chinese government. limited exclusion order and a cease 27% from $25.1m, due mainly to “With the JV taking on the execution and desist order on parallel optics the parallel optics device business). of manufacturing as well as the busi- device products found to have For fiscal Q1/2011 (to end-Decem- ness development in China, Emcore infringed patents belonging to ber 2010), Emcore expects revenue can focus on continued development Avago Technologies. to fall slightly to $50–53m due to a of our next-generation CPV products However, gross margin has fallen drop in Fiber Optics sales (a short- and solar business development in from 27.5% last quarter to 23.6%. term effect, due to the ITC ruling). North America and Europe,” notes By segment, Photovoltaics margin During fiscal 2010, management president & CEO Dr Hong Q. Hou. fell from 30.7% to 29.3%, due implemented a series of measures, Also to improve liquidity, in mainly to higher manufacturing and continues to evaluate opportu- November Emcore entered into a expenses and certain contract nities intended to align the cost three-year $35m asset-backed losses, offset by leverage from structure with revenue forecasts. revolving credit facility with Wells higher volume. Fiber Optics margin The end of July saw agreement with Fargo Bank, which can be used for fell from 25.9% to 20.4%, due San’an Optoelectronics Co Ltd of working capital, letters of credit and mainly to higher material costs and Xiamen, Fujian province to form the other general corporate purposes. an unfavorable shift in product mix joint venture Suncore Photovoltaics www.emcore.com

Emcore regains compliance for continued NASDAQ listing The NASDAQ Listing Qualifications received a letter from the NASDAQ goodwill and intangible assets Department says that Emcore has Stock Market saying it was not in accounts for the fiscal years ended regained compliance with NASDAQ compliance due to not filing its 30 September 2008 and 2009. Listing Rule 5250(c)(1), which annual report on Form 10-K for Because Emcore has now been requires firms to file their periodic fiscal 2010 (to end September). able to regain compliance with the financial reports with the US Secu- Filing was delayed since its prior rule before the deadline of 28 Feb- rities and Exchange Commission auditor Deloitte & Touche LLP had ruary, the firm is no longer required (SEC) on a timely basis. not completed its reviewing its to submit a plan to NASDAQ for On 30 December, Emcore had audit procedures on the firm’s regaining compliance.

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 63 Huainan City lures Emcore–San’an China JV Suncore Grants, tax holiday & rebate to support 1000MW capacity over 5 years

Emcore Corp of Albuquerque, NM, plant in Qinghai province is China’s and on-going operations, Huainan USA, which makes components and largest installation. will provide a land grant of 1600mu subsystems for the broadband, The agreement to form the joint (263 acres), extended tax holidays, fiber-optic, and solar power markets, venture (owned 40% by Emcore and and other financial incentives. Also, has entered into an investment and 60% by San’an) was announced on within three days of the start of cooperation agreement with San’an 30 July, with the purpose of devel- plant construction, Huainan will Optoelectronics Co Ltd of Xiamen, oping, manufacturing and distribut- provide a cash grant of RMB500m Fujian province, China and Huainan ing high-concentration photovoltaic ($75m), restricted to use solely for municipal government that calls for (CPV) receivers, modules and capital equipment purchases to Emcore and San’an to register and systems for terrestrial solar power support the establishment of operate their China-based joint applications. Emcore and San’an Suncore operations. For the first venture Suncore Photovoltaics Co previously planned to establish 1000MW, Huainan will also provide Ltd in Huainan, a prefecture-level Suncore’s primary manufacturing a RMB1.4 ($0.21) cash rebate to city with 2.4 million inhabitants in operations in Wuhu City, Anhui Suncore for every watt of CPV the hinterland of east China and province. Suncore’s new location is systems manufactured in Huainan the center of Anhui province. expected to expedite the schedule and sold in China. Huainan is the center of Southeast for the construction and start of “China is viewed as one of the China’s chief coal-mining region, operations as well as providing most promising markets for CPV with an annual output greater than other economic incentives for the solar power. This agreement 80 million tons, as well as operating joint venture. demonstrates Huainan’s strategy several large-size coal-fired power The agreement provides for Sun- and commitment to the growth of plants with a total capacity of core’s engineering, manufacturing, its renewable energy industry,” 10GW. and distribution operations for CPV comments Emcore’s president & San’an currently designs, manu- components and systems to be CEO Dr Hong Q. Hou. “These finan- factures and supports products established in the Economic and cial incentives will accelerate the including full-wavelength-range Technology Development Zone of commercialization of Emcore’s CPV high-brightness LED chips and Huainan City, which is pursuing technology and production ramp,” wafers, solar cells, and PIN photo- renewable energy industry opportu- he adds. “This investment by diodes. Operating over 250,000m2 nities to balance their industry mix. Huainan and the establishment of of facilities in Xiamen, Fujian Suncore is expected to establish a Suncore’s low-cost manufacturing province, Wuhu, Anhui province, total of 1000MW of manufacturing operation will enable our CPV tech- and Tanjin, its annual LED produc- capacity at the site over the next nology to become a cost-effective tion capacity has reached 650,000 five years, including 200MW to solution for commercial and power wafers (20bn LED chips), making it be ready by the end of 2011, utility applications,” Hou believes. China’s largest LED epiwafer and 300MW by the end of 2013, and Emcore and San’an are currently chip maker. Its total number of the remaining 500MW by the end pursuing Suncore’s business regis- installed MOCVD reactors for LED of 2015. Total capital expenditure tration in Huainan, and plan to start production will exceed 150 once its and working capital investment is plant construction in early 2011. operation in Wuhu is in full produc- estimated to be RMB8bn ($1.2bn). www.Sanan-e.com tion, while its 1MW CPV power In addition, to support start-up www.emcore.com

NASA awards $10m contract for MMS spacecraft’s solar panels NASA Goddard Space Flight Center InGaP/InGaAs/Ge solar cells to sance Orbiter mission, which is (GSFC) of Greenbelt, MD, USA has power four MMS spacecraft. With currently powering the spacecraft awarded Emcore a contract worth a conversion efficiency nearing orbiting the Moon,” says Emcore’s about $10m (including options) to 30%, the ZTJ solar cell is claimed chief operating officer Christopher manufacture, test and deliver solar to be one of the highest-perform- Larocca. “Winning this new con- panels for the Magnetospheric ance space-qualified multi-junction tract accelerates Emcore’s efforts Multiscale (MMS) mission. solar cells on the market. to be the premier supplier of solar Emcore expects to deliver a total “Under a previous contract, we panels for demanding spacecraft of 32 solar panels using its third- successfully delivered solar panels power systems,” he adds. generation triple-junction (ZTJ) for NASA GSFC’s Lunar Reconnais- www.gsfc.nasa.gov

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 64 News: Photovoltaics

IN BRIEF NYSERDA awards Magnolia second BluGlass outsources product development contract InGaN PV processing Magnolia Solar Corp of Woburn, MA, that scatter normally incident light to Rainbow USA, which develops nanostructure- laterally into the device. “Advanced BluGlass Ltd of Sydney, Australia based thin-film solar cells for light trapping structures are needed has commissioned the foundry terrestrial applications for defense to improve the current output and services of Rainbow Optoelectronics and commercial applications, says efficiency of a variety of different Materials (Shanghai) Co Ltd to that its subsidiary has received a thin-film technologies,” Welser adds. provide device fabrication and second product development contract “Magnolia’s nanostructured optical processing services for the pur- from the New York State Energy coatings, developed in collaboration pose of creating a nitride solar cell Research and Development Authority with professor Fred Schubert, can prototype designed by BluGlass. (NYSERDA). The baseline program both minimize reflection losses on Spun off from the III-nitride award is $250,000, with Magnolia the front surfaces of thin-film solar department of Macquarie University contributing matching funds. cells, and recycle photons that pass in 2005, BluGlass has developed The new program builds on previ- through the device back into the a low-temperature process using ously announced and on-going absorbing semiconductor thin film remote plasma chemical vapor NYSERDA program work at Magnolia. layers,” Welser continues. deposition (RPCVD) to grow mat- In October, Magnolia received fund- Magnolia’s technology can also erials including GaN and InGaN ing from NYSERDA for Phase II of a capture a larger part of the solar on glass substrates for the pro- three-phase $1m development pro- spectrum to produce high-efficiency duction of LEDs, with what is gram (begun in March with Phase I) solar cells, and incorporates a unique reckoned to be great low-cost to demonstrate high-efficiency nanostructure-based antireflection potential and inherent scalability. nanostructured thin-film solar cells. coating technology to further boost In May 2009, the firm said it aims The latest contract (which lasts one the cell’s efficiency, reducing the to develop high-efficiency group year) aims to improve the perform- cost per watt. Magnolia’s technol- III nitride solar cells as a supple- ance of thin-film solar cells by incor- ogy targets electrical power gener- mentary market for its RPCVD porating light trapping techniques ation applications, such as power technology. and nanostructured optical coatings. for electrical grids and distributed The deal with Rainbow enables As part of the technical effort, Mag- power applications ranging from BluGlass to outsource the pro- nolia will collaborate with Technical commercial and residential lighting cessing of its InGaN solar cell Advisory Board member professor to specialized military applications. designs to a dedicated group-III Fred Schubert and his team at the “Commercially viable renewable nitride firm without the need to Rensselaer Polytechnic Institute (RPI) energy has tremendous potential invest in additional capital equip- in Troy, NY to incorporate nanostruc- benefits for New York State in ment during the research phase. tured-based coatings developed terms of security, economic growth, Alan Li, who joined BluGlass as for light-emitting diodes into high- and the environment,” comments a non-executive director in efficiency solar cell applications. Magnolia’s president & CEO Dr November 2009, is general man- Principal investigator on the new Ashok K. Sood. “We are committed ager of Rainbow, a device maker NYSERDA program is Magnolia’s to growing in the Albany region, that provides nitride semicon- chief technical officer Dr Roger E. supported by the world-class intel- ductors (primarily LED displays) Welser, who will lead development lectual and technological infrastruc- to more than 25 countries. of nanostructured coatings that can ture at RPI and CNSE’s Albany BluGlass says that InGaN solar scatter light horizontally into the NanoTech Complex,” he adds. cells promise to be long lasting, active layers of thin-film solar cells. In October, Magnolia opened an relatively inexpensive and the “Magnolia is aiming to revolutionize office at the Albany Nanotech com- most efficient ever created. the power-generating capability of plex on the campus of the Univer- The firm is developing solar cell terrestrial photovoltaic systems by sity of Albany (State University of structure designs and aims to developing a low-cost, thin-film New York) to allow staff to collabo- develop cell prototypes as part of technology that delivers unprece- rate closely with the development a $4.9m grant awarded in 1995 dented levels of electrical energy team members at SUNY Albany’s for the ‘High Efficiency Thin Film per unit area,” he notes. College of Nanoscale Science and Solar Cell Project’ under the Both higher current and voltage Engineering (CNSE) as well as RPI, Commonwealth government’s outputs are expected from thin-film and to better capitalize on the ‘Climate Ready’ program. solar cells combining Magnolia’s characterization facilities available www.bluglass.com.au unique material structure with in the New York capital region. nanoengineered optical coatings www.magnoliasolar.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 65 Boeing to supply GaAs PV powered satellites to Mexico

Boeing (the parent firm of III-V- Each Boeing 702HP satellite will years of experience in designing based solar cell maker Spectrolab Inc supply 14kW of power through and delivering advanced geomobile of Sylmar, CA, USA) has received a five-panel solar array wings that systems.” contract worth about $1bn from the use triple-junction gallium arsenide Boeing also will develop two government of Mexico to deliver an solar cells. Both satellites will carry ground sites in Mexico with end-to-end satellite communications a 22m L-band reflector for mobile advanced beam-forming flexibility system, providing secure commu- satellite services, complemented by to direct mobile user spot beams to nications for the country’s national a 2m Ku-band antenna. government agencies operating in security needs as well as enhanced Boeing will procure MEXSAT-3 and Mexico and its patrimonial seas, coverage for civil telecoms. a spacecraft operations center from including the Pacific Ocean and Gulf The MEXSAT system will consist of its supplier partner Orbital Sciences of Mexico. three satellites, two ground sites, Corp. MEXSAT-3, an Orbital Star 2.4 Boeing has previously provided associated network operations sys- satellite, will provide full coverage five satellites serving Mexico, start- tems and reference user terminals. of Mexico and its patrimonial seas ing with Morelos 1 and Morelos 2 Boeing will deliver a complete and relay civil communications for (which were both launched in 1985); turnkey satellite system comprising socioeconomic development. Solidaridad 1 and Solidaridad 2 Boeing 702HP geomobile satellites “MEXSAT is the fourth generation (launched in 1993 and 1994); and MEXSAT-1 and MEXSAT-2 and one of satellites Boeing has provided to Satmex 5 (launched in 1998). extended C- and Ku-band satellite, Mexico for government and civilian Solidaridad 2, which has exceeded MEXSAT-3 (due to launch first, at satellite communications,” says its contract life, is still in service, the end of 2012), which will provide Craig Cooning, CEO of Boeing and Satmex 5 is expected to end its fixed satellite services from geo- Satellite Systems International. service life in 2012. synchronous orbit. “MEXSAT builds on Boeing’s 13 www.spectrolab.com

Circadian hits temperature-corrected IN BRIEF peak module aperture efficiency of 30% Amonix partners with Flextronics Circadian Solar of Coventry, UK, in which all aspects of system which is developing concentrated design are engineered holistically to Amonix Inc of Seal Beach, CA, photovoltaic (CPV) systems incorpo- deliver the lowest possible cost of USA has chosen Singapore-based rating GaAs multi-junction PV cells, electricity generated. Focusing on electronics manufacturing services has achieved a temperature- the design at the full system level (EMS) provider Flextronics as a corrected peak module aperture ensures that the CPV modules work manufacturing partner for its efficiency of 30% during trials at its most efficiently as part of the com- CPV utility-scale solar systems. test site in Lisbon. The DC module plete system. Integral to this has “Partnering with a proven efficiency result was reproduced been the firm’s proprietary tracker, world-class manufacturer for with a number of different modules which demonstrates outstanding production will allow us to con- over the course of the trials. accuracy, even under high wind nect more customers to cost- Circadian has been testing its sys- loading, it is claimed. Circadian effective solar power,” says CEO tem, which is designed for optimum expects to announce results of its Brian Robertson. “Flextronics’ performance in sunbelt regions, system testing in early 2011. manufacturing capabilities right at the Faculty of Sciences of the “We are seeing rapid progress,” here in California and also in University of Lisbon since June. says CEO Jeroen Haberland. “Deliv- Nevada will enable us to reduce The trials complement the firm’s ering high-efficiency, reliable elec- time-to-market and rapidly scale module evaluation program set up tricity at an affordable cost level is our business to meet the needs in Cyprus in late 2008. A further of the utmost importance to us, of customers in our target test site is being established in the and the latest efficiency result markets of California, Nevada, Middle East, as part of the plan to demonstrates that exceptional effi- Arizona, New Mexico, Colorado, demonstrate cost-effective energy ciencies can be delivered without and other Southwestern US states yield in different regions and envi- sacrificing affordability,” he adds. with sunny and dry climates,” ronments. Circadian’s testing is expected to he adds. Circadian says that it has achieved continue into mid-2011 as the firm www.flextronics.com the DC module efficiency by adopt- builds up to manufacturing. www.amonix.com ing its Ultra Power Density approach, www.circadiansolar.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 66 News: Photovoltaics OPEL Solar and Ecotech form JV OPEL Solar Asia

North America-based OPEL Solar Inc, largest in the world and has a robust The burgeoning CPV solar market in which makes high-concentration growth projection,” says OPEL Solar East Asia may bring OPEL revenues photovoltaic (HCPV) panels (as well Inc’s chief operating officer Frank approaching $100m over the next as roof- and ground-based solar Middleton. “With Ecotech, OPEL 4–5 years, he reckons. trackers for mounting them) has Solar found a well-established part- “OPEL Solar has proven technology formed the joint venture OPEL Solar ner to advance our business into and a good product for the CPV Asia Ltd (OSA) in Hong Kong with East Asia,” he adds. “OPEL chose to market in East Asia,” believes Ecotech Environmental Technology Ltd. enter this market with Ecotech Michael Lam, chairman of Ecotech As a division of Hong Kong-based because of their profound regional and chairman & CEO of the E&K E&K Holdings Group, Ecotech is a knowledge and client base, with the Holdings Group. “There are chal- vertically integrated solutions added advantage that, since lenges ahead, but the chance of provider spanning product develop- Ecotech is established, it serves to capturing market opportunities in ment, system design, manufac- minimize our start-up expense.” this region is very real,” he adds. turing, assembly & test, project Exemplifying rising demand for “We will work hand in hand with management, installation, commis- HPCV in China, OSA’s creation also OPEL Solar and our strategic part- sioning, and after-sales services. involves an initial purchase order for ners and customers in China to The firm has three business units in 2MW of OPEL Solar’s HCPV system realize these goals.” ‘cleantech’: Energy; LED Lighting; products (both solar modules and The products shipped for the 2MW and Solar Applications and Devices. tracker models). “These products order will open the door for local OPEL says that the JV represents are expected to fulfill immediate manufacturing by OSA, as Ecotech the beginning of a long-term goal contracts Ecotech has secured within has an established network of local to position it to enter East Asia, the People’s Republic of China, and manufacturers. Once the manufac- developing the HCPV market there it represents a multimillion dollar turing processes attain efficiency, and moving OPEL Solar’s HCPV revenue opportunity for OPEL Solar, OSA will assume the full manufac- technology into what is reckoned which results in revenue during the turing process to install complete to be the world’s fastest-growing first year of operations of the JV,” HCPV utility-grade solar farms. solar market, with years of strong says Middleton. “The decision to pursue a joint growth projections ahead. As well as the initial 2MW order, a venture strategy to enter East Asia OSA’s mission is to market OPEL’s continued strong ordering stream is is one of the most important deci- HCPV products throughout East Asia. expected for OSA. “The establish- sions we have made to support the The primary country targeted for ment of OPEL Solar Asia, with its rapid growth of the company,” says CPV market penetration is China. anticipated order projection, Pierhal, stating that other world- “According to a recent posting on represents significant value growth wide joint ventures are in various New Energy World Network, China’s for OPEL Solar’s stakeholders,” stages of negotiations for 2011. photovoltaic market is one of the says OPEL’s CEO Leon M. Pierhal. www.ecotech-sz.com.cn

OPEL wins order for turnkey 446kW solar field in Rhode Island OPEL Solar Inc is to construct a conventional fixed-mounted PV “Toray has multiple locations 446kW power plant at the 70-acre panels. It should generate throughout the US; thus we are headquarters in North Kingstown, RI, 625MWh per year (equivalent to optimistic that our successful col- USA of Toray Plastics (America) Inc supplying electric power for a year laboration in Rhode Island may (Toray’s first solar installation in the to over 100 homes). lead to additional solar projects,” US and one of the largest utility- OPEL says that Toray Plastics is says OPEL Solar’s CEO Leon M. grade plants in Rhode Island). an example of using American Pierhal. OPEL says Toray Plastics chose it Recovery and Reinvestment Act Not only does the Toray agreement due to its higher energy production funds provided by both the Federal represent a multi-million dollar and lowest cost per kilowatt-hour and state governments to create contract for OPEL, it is the first generated. Higher system efficiency new clean energy sources and jobs. implementation of its new strategic is largely due to OPEL’s TF-800 The project is eligible for both business directions. In addition to utility-scale single-axis tracker. Federal funds and state funds the brownfield initiative announced The solar field will consist of 1650 awarded by the Economic Devel- several months ago, OPEL also PV panels mounted on 50 TF-800 opment Commission for the aims to be a full service provider trackers, and should result in 20% State of Rhode Island. Construction for select solar projects. higher energy output than that of will begin in the spring. www.opelinc.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 67 Semprius installs demo microcell CPV system at TEP

Semprius Inc of Durham, NC, USA, high-efficiency GaAs-based micro- which develops high-concentration cells, measuring just 600m by photovoltaic (HCPV) panels, has 600m in area and less than 10m installed the industry’s first microcell- thick, are up to 300 times smaller based HCPV research development than cells used by competing HCPV & demonstration (RD&D) system. manufacturers, it is claimed. Optics Deployed in August at UniSource concentrates the sunlight 1000 Energy Corp subsidiary Tucson times so that just 0.1% of the Electric Power (TEP) — which module area is covered with the provides power to over 400,000 microcells. The microcell’s small customers in southern Arizona — size enables use of low-cost optics the system combines Semprius’ and electrical interconnects, which HCPV modules with an automated remove the heat, eliminating costly solar tracking system developed by thermal management solutions. Siemens. The TEP project is part of “Our technology’s extremely small a joint development agreement Semprius RDD system at TEP. footprint and high efficiency play a signed in January by Semprius and key role in minimizing HCPV system Atlanta-based Siemens Industry Inc cost for HCPV will be the key for the cost and improving performance (the US affiliate of Siemens’ global success of this technology,” notes and reliability,” says president & Industry Sector business) that will Peter Krause, business segment CEO Joe Carr. “This demonstration lead to deployment of many HCPV manager for Siemens Industry Inc. system will represent a major step systems at test sites worldwide. “By combining our advanced forward in the continuing effort to Siemens supplied the RD&D sys- automation and control equipment drive down the cost of solar power,” tem’s two-axis tracker, which uses its with Semprius HCPV panel, we he believes. Simatic S7-1200 automation system believe this project will demonstrate “We’re looking forward to learning and the Solar Positioning Algorithm the technology’s potential to deliver how Semprius’ HCPV technology of the US National Renewable Energy grid-level prices to utility customers.” performs in our service territory, Laboratory (NREL), which provides a Semprius says HCPV offers the particularly during periods of peak tracking accuracy of better than 0.2º. lowest solar levelized cost of energy electric usage,” says Steve Metzger, The Siemens industrial electronics in sunny, dry climates of any photo- TEP's superintendent of distribution components are designed to operate voltaic technology by providing planning & technical services. “This in Arizona’s arid desert climate. higher conversion efficiency and collaborative project will contribute The tracker also features built-in higher energy yield. Using a significantly to our efforts to evalu- remote data acquisition capability patented production process, the ate and improve the performance that allows Semprius to monitor firm has developed microcells that of solar technologies employed by the performance of the system. increase system performance and TEP customers.” “Competitive project deployment reliability and decrease cost. The www.semprius.com

French CPV start-up Heliotrop wins innovation awards

Concentrated photovoltaic (CPV) (e.g. those developing a technology (HCPV) modules (1024 suns, module maker Heliotrop S.A.S. of that can be disseminated on a large higher concentration than most Paris, France has won two awards scale) to be encouraged, supported CPV competitors) allow us to reach for its CPV units. and validated. a Levelized Cost of Electricity under Formed in 2009, Heliotrop (which The firm also received the ‘Prix 15c€/kWh in high direct solar means Sunflower in Greek) was Spécial du Jury — Clean Tech irradiance areas,” he claims. selected from among more than Republic. Heliotrop was selected for Heliotrop is currently commission- 400 start-ups to receive the this prize by renewable-focused ing its G2.0 CPV units in several ‘Grand Prix de l’Innovation 2010 de online publication Clean Tech countries (in Europe and North la Ville de Paris’ (Prize for Innovation, Republic from among over 70 Africa) and will start to market CPV organized by Mairie de Paris, Paris- start-ups. plants in 2011. It also installed a Développement and the laboratory The awards are a sign of recognition G1.0 unit in the south of France in Paris Région Innovation). The of Heliotrop’s patented technologies, summer 2010. Grands Prix de l’Innovation aim to says the firm’s Paul Bellavoine. www.heliotrop.fr allow young, innovative companies “Our high-concentration photovoltaic www.innovation-paris.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011

70 News: Photovoltaics Plutonic Power partners with GE Energy Financial Services to buy 50MW portfolio from First Solar

Plutonic Power Corp of Vancouver, and supporting our strong partner- Ontario Power Authority under British Columbia, Canada and GE ship with Plutonic,” says Mark 20-year energy purchase agree- business unit GE Energy Financial Tonner, managing director and ments and will interconnect to the Services of Stamford, CT, USA have Canada business leader at GE Energy province’s distribution grid at five agreed to acquire from First Solar Financial Services. “We see signifi- points. Combined, the facilities are Inc a 50MW (alternating current) cant growth potential for solar expected to produce enough elec- portfolio of three cadmium telluride power worldwide, which continues tricity to power about 6300 local (CdTe) photovoltaic solar facilities to improve on technology costs and homes and avoid 14,600 tons of to be built in Ontario. Plutonic efficiencies, and helps balance carbon dioxide a year (equivalent Power identifies, develops and wind-generated power, which to taking 3700 cars off the road). operates clean power projects, and peaks at different times.” Plutonic Power and GE Energy the deal marks its expansion into First Solar will continue developing Financial Services also jointly own solar power as well as into Ontario. the facilities — Amherstburg British Columbia’s largest wind farm The firm is expected to make an (10MW), Belmont (20MW) and (the Dokie Wind Project) and equity contribution of about Walpole (20MW) — and will provide British Columbia’s largest inde- CDN$6m and serve as the projects’ engineering, procurement and pendent run-of-river hydro project managing partner. Project debt will construction (EPC) services and (the East Toba River and Montrose be arranged by First Solar on behalf operations and maintenance (O&M) Creek hydroelectric project), which of Plutonic and GE Energy Financial services under long-term contracts. have a combined capacity of Services and is expected to be in Permitting the projects under the 340MW and have secured long-term place at financial close, which will province’s Renewable Energy Energy Purchase Agreements with coincide with the start of commercial Approval process is expected this BC Hydro. operation. spring. Construction should begin In December, GE Energy Financial “Expanding into both a new market by mid-2011. Services announced that it had and a new technology represents “These projects will significantly reached its multi-year target of significant growth for Plutonic,” expand Ontario’s supply of clean, investing US$6bn in renewable says its vice chairman & CEO affordable, sustainable solar energy,” energy projects, which now span Donald McInnes. “Our solid rela- says Frank De Rosa, First Solar’s 14 countries and include invest- tionship with GE Energy Financial senior VP of project development ments in wind farms, solar installa- Services enabled this expansion for North America. tions, hydroelectric projects, landfill into our third joint near-term The projects will create more than gas facilities and projects involving operating asset,” he adds. 600 construction jobs, generate other technologies across a wide “This transaction is GE Energy tax revenues for various levels of spectrum of capital (from project Financial Services’ first solar invest- government and create economic equity to debt and venture capital). ment in Canada, broadening our benefits for local businesses. www.plutonic.ca US$6bn renewable energy portfolio Power output will be sold to the www.geenergyfinancialservices.com

First Solar to supply modules to India’s ACME for 15MW

First Solar Inc of Tempe, AZ, USA realise very large photovoltaic solar ment and construction of projects has agreed to supply its CdTe thin- projects, comments ACME’s chairman with First Solar modules,” says film photovoltaic modules to ACME & managing director Manoj Kumar ACME’s executive VP Atul Sabharwal. Tele Power Ltd (ATPL) of New Delhi, Upadhyay. “This agreement is in “We see India as a land of India, which provides solutions for line with our endeavour of pioneer- immense opportunity and potential,” alternative energy and wireless ing turnkey solar technologies in comments First Solar’s executive telecoms, for a 15MW (DC) solar India,” he adds. VP of marketing & product man- power plant in the state of Gujarat. “Our hope is that this project will agement TK Kallenbach. “We are Delivery is expected to take place mark the beginning of a long and pleased to collaborate with a leader by March 2011 to fulfil the Gujarat mutually beneficial relationship like ACME to contribute to the government’s expectations. between the two companies as we country through the development First Solar is one of the few firms in begin to develop the nascent Indian of clean, affordable, sustainable the world that possess a complete solar market and ACME demonstrates solar electricity.” set of capabilities required to its expertise in engineering, procure- www.acmetelepower.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 71

NRG to buy First Solar’s 290MW IN BRIEF Agua Caliente project EPIR receives Plant to be world’s largest solar field business award NRG Energy Inc of Princeton, NJ, our multi-hundred-megawatt utility- EPIR Technologies Inc of Boling- USA, via its subsidiary NRG Solar, scale projects to begin construction.” brook, IL, USA, which develops has agreed to acquire the 290MW An application has been submitted infrared sensor, biosensor and Agua Caliente solar project from to the US Department of Energy for solar photovoltaic products, has First Solar. a federal loan guarantee in connec- been honored by the Bolingbrook The project is due to be completed tion with the financing of the project, Chamber of Commerce as a winner by 2014 (when it is expected to be which is expected to be one of the of a 2010 Best of Bolingbrook the world’s largest operational PV first in the US to start construction Business (BoBB) award. site) and has a 25-year power under the program. Closing of the EPIR was founded in 1997 by purchase agreement with Pacific acquisition is contingent on receiv- chairman & CEO Dr Sivalingam Gas and Electric Company. ing the federal loan guarantee. Sivananthan who, at the Situated in Yuma County on 2400 NRG plans to invest up to $800m of University of Illinois at Chicago, acres of land between Yuma and equity in the project through 2014 pioneered the growth of single- Phoenix, AZ, Agua Caliente is through a potential combination of crystal II-VI materials such as expected to generate state and cash on hand in addition to third- mercury cadmium telluride local tax revenues, provide wages party investor equity. (HgCdTe) on silicon for infrared for up to 400 construction jobs, and The Agua Caliente project has night-vision applications. EPIR is create economic benefits for many secured all necessary permits for now building on this to also local businesses. construction and the early construc- develop and manufacture high- “Solar power is critical to transi- tion phases have begun. First Solar efficiency, low-cost multi-junction tioning our nation to having a has developed the project and is solar cells for concentrated greater emphasis on large-scale the engineering, procurement and photovoltaic (CPV) applications. clean energy technologies and it is construction contractor, using its Over the past three years EPIR going to be projects of the scale of advanced thin-film PV modules. has tripled in size as it expanded Agua Caliente that will help us First Solar will provide operations into manufacturing infrared night- achieve this ambitious goal,” says and maintenance services. vision products for defense and NRG Energy’s president & CEO Agua Caliente is the latest in a commercial applications and con- David Crane. “This investment sig- series of renewable energy devel- tinued its product development nificantly increases our presence in opments by NRG in Arizona this for solar energy applications. the state and benefits the residents year. The firm is also developing a The BoBB award was bestowed of Arizona while providing attractive 25MW PV project for Tucson Electric upon the Bolingbrook-based returns to NRG’s stakeholders.” Power to help meet the state’s businesses that contributed the NRG estimates that, at full capac- energy demands with renewable most to the community through ity, the 290MW project will provide energy. In September, NRG began innovative business practices, electricity for more than 225,000 an initiative with Kennedy Partners significant accomplishments, and homes, offsetting about 5.5 million to develop solar arrays for Arizona corporate citizenship. The award metric tons of CO2 over 25 years schools to meet their own electricity was presented to EPIR by mayor (equivalent to taking more than needs while providing new teaching Roger Claar at a banquet cere- 40,000 cars off the road annually). tools and shade for parking. mony honoring all the nominees. Agua Caliente will generate elec- “Arizona is a key area of growth “This is a testament to the tricity with no air emissions, no for NRG where our investment is remarkable growth EPIR has waste production and no water creating local jobs and building experienced in some of the tough- consumption. infrastructure,” says Tom Doyle, est times this nation has ever “Agua Caliente is representative of president of NRG Solar and a seen,” says Dr Chelva Kumar, a our mission to provide clean, afford- Phoenix resident. “It is very gratify- member of EPIR’s board of direc- able, sustainable solar energy, capi- ing to be able to see the benefits of tors. “We have consistently talizing on our advanced thin-film our partnerships with local schools, added skilled jobs over the past technology and the tremendous providing cooling and heating for three years and will continue to solar resource of Arizona,” says local businesses and universities help stimulate the local economy First Solar’s CEO Rob Gillette. “We and developing solar fields like with our planned transition into are very pleased to further expand Agua Caliente and our project for solar cell manufacturing.” our relationship with NRG as the Tucson Electric Power.” www.epir.com owner of Agua Caliente, the first of www.nrgenergy.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 72 News: Photovoltaics First Solar forecasts 46% growth in 2011 to $3.7–3.9bn Operating cash flow of $1.0–1.1bn to help double production capacity First Solar Inc of Tempe, AZ, USA, EPS (earnings per fully diluted cash flow. The firm also plans to which makes thin-film photovoltaic share) is forecasted to grow to invest $1.0–1.1bn of capital in modules based on cadmium telluride $8.75–9.50 per fully diluted share order to nearly double production (CdTe) as well as providing (compared with guidance for 2010 capacity by year-end 2012, to engineering, procurement and of $7.50–7.65 for 2010). Consoli- maintain existing capacity, and to construction (EPC) services, fore- dated operating income should be add infrastructure to support casts that in 2011 its net sales will be $875–975m (compared with 2010 growth. $3.7–3.9bn (up 46% year-on-year guidance of $595–620m). These “First Solar revenue and profit is on the midpoint of 2010 guidance, forecasts include $80–85m of continuing to grow in 2011,” reck- provided on 28 October, of manufacturing start-up expenses ons CEO Rob Gillette. “We are ben- $2.58–2.61bn). This consists of and $15–20m of factory ramp costs efiting from diversifying global $2.8–2.9bn of module sales and associated with plant expansions. partner demand and an increase in $0.9–1.0bn of EPC/project devel- During 2011 First Solar expects to revenue from utility-scale projects.” opment sales. generate $1.0–1.1bn of operating www.firstsolar.com Executive chairman Ahearn to become chairman of board; chief accounting officer Zhu made interim chief financial officer On 1 January, Mike Ahearn transi- seeing financial operations until a Utility Systems business and tioned from executive chairman of new CFO is named. As announced managing our 2.2GW captive First Solar to chairman of the board in July, Meyerhoff is fully transi- project pipeline, which will be key of directors, which is described as a tioned from his role as CFO to drivers of our future growth.” natural evolution of the leadership president of First Solar’s Utility Zhu joined First Solar in 2007 as succession announced in 2009 when Systems business, which provides VP & corporate controller and has Rob Gillette was appointed CEO. complete large-scale PV system been chief accounting officer since “We thank Mike for his unwavering solutions for utility customers. 2009. Previously, he held positions dedication to First Solar and look “We are confident James will in accounting and controlling at forward to continuing to work transition seamlessly into this new Salesforce.com, Chiron Corp and with him,” says Gillette. role given his deep experience and KPMG LLP. He is a Certified Public Also, chief accounting officer knowledge of our financials and Accountant and earned a B.A. in James Zhu has been appointed financial systems,” says Gillette. economics in China and an M.B.A. interim chief financial officer, suc- “This also frees Jens to be fully in accounting from Golden Gate ceeding Jens Meyerhoff and over- dedicated to running our global University.

China Guangdong Nuclear to co-develop Ordos project

At a ceremony in Beijing, First Founded in August 2009 as a sub- functions. First Solar will supply its Solar’s president Bruce Sohn and sidiary of China Guangdong Nuclear thin-film solar PV modules and will Han Qinghao (president of China Power Group, CGN SEDC focuses on support CGN SEDC with EPC and Guangdong Nuclear Solar Energy solar power investment, construction, operations and maintenance (O&M) Development Co Ltd, or CGN operation and maintenance, and is advisory services. SEDC) have signed a memorandum actively involved in related industries. “We look forward to working of understanding (MOU) to collabo- By the end of 2010, it had completed together to make the Ordos project a rate on the development of Phase 1 construction of solar facilities capable reality and to contributing to China’s of the previously 2GW solar photo- of producing 20MW, and is currently renewable energy goals and market voltaic (PV) plant in Ordos City, in the process of constructing facili- development,” says Sohn. Ordos is Inner Mongolia, China. ties with a capacity of 70MW. the first significant solar project to The agreement is a key step forward In the latest MOU, First Solar and adopt advanced thin-film technology for the Ordos project, following CGN SEDC will work together to in China, comments Han Qinghao. First Solar’s MOU with the Ordos execute the 30MW AC first-phase Ordos is also the first large-scale Government in September 2009, demonstration project. CGN SEDC solar collaboration between China and the Chinese government’s will be the majority project owner and and the USA and an example of approval last September of the operator, performing engineering, China–US bilateral cooperation. pre-feasibility study for Phase 1. procurement and construction (EPC) www.cgnsedc.com.cn

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 73 First Solar buys utility solar tracker maker RayTracker

First Solar has acquired RayTracker ment and Construction (EPC) group, First Solar shares RayTracker’s Inc of Pasadena, CA, a tracking bringing expertise in solar technology vision of reducing the levelized cost technology and balance-of-systems innovation, reliability engineering, of solar electricity to that of fossil firm that is an operating company advanced PV system modeling, fuels, says RayTracker’s president of Idealab, a creator and operator software engineering, product Mark Henderson. “From early on in of technology firms. development and high-volume our discussions with First Solar, it RayTracker is also backed by The manufacturing. RayTracker’s was very clear that there was great Quercus Trust and Phoenix Fire IV LLC customers will be transitioned to synergy between the capabilities (whose manager, Richard Klein, owns First Solar, the firm says. and technologies of the two compa- and operates Quixotic Systems Inc). “Addition of RayTracker’s people nies,” he adds. Technology devel- RayTracker was founded to meet and technology will help accelerate oped by RayTracker includes its the need for robust, reliable and our ongoing quest to enable a world GC-Series single-axis trackers, its cost-effective solar trackers, as well powered by clean, affordable and unique PV-Platform Software Toolset as software and hardware to enable sustainable solar electricity,” says for system design and operation, the lowest-cost design, installation First Solar’s president Bruce Sohn. wireless infrastructure technology, and operation of solar PV plants. “We welcome RayTracker’s innovative and other PV balance-of-system RayTracker’s entire team will join associates to our advanced systems innovations. First Solar’s Engineering, Procure- development team,” he adds. www.raytracker.com

NextEra buys 40MW of Canadian PV IN BRIEF projects from First Solar First Solar awarded CanSIA’s ‘Solar PV NextEra Energy Resources LLC (the expected to help avoid nearly competitive-energy subsidiary of 45,000 tons of CO2 annually Project of the Year’ NextEra Energy Inc of Juno Beach, (equivalent to removing nearly First Solar has been recognized FL, USA, and the largest generator in 8600 cars from the road every year by the Canadian Solar Industries North America of renewable energy for the life of the project). Association (CanSIA) for devel- from the wind and sun) has agreed Pending the necessary government oping and constructing Canada’s to buy four solar projects totaling approvals, construction on all four largest PV power plant. 40MW in Ontario, Canada from projects is expected to begin in first- The 80MW Sarnia solar project, First Solar. quarter 2011, with commercial oper- completed this October in Sarnia, As a provider also of engineering, ation expected by the end of 2011. Ontario, and purchased by procurement and construction (EPC) “We’re pleased to expand our Toronto-based energy distributor services, First Solar is continuing position as North America’s leading Enbridge Inc, is also said to be with development and construction generator of solar power through the world’s largest operating PV of the Sombra and Moore Solar the addition of our first Canadian facility. Energy Centers (in Sombra and solar projects,” says NextEra Enbridge and First Solar jointly Moore Townships, Ontario) using its Energy Resources’ president & CEO accepted the ‘Solar PV Project of thin-film solar modules. Each Solar Mitch Davidson. “Solar power will the Year’ award at CanSIA’s Energy Center will consist of two help promote a clean-energy econ- annual conference on 7 December. 10MW PV projects. Once operational, omy in Ontario, reduce its depend- “Together with Enbridge, we are NextEra Energy Resources’ Canadian ence on fossil fuels, and address leading the development of utility- subsidiary, NextEra Energy Canada, global climate change through the scale solar energy in Canada,” will own and operate all four projects. production of emission-free energy,” claims Frank De Rosa, First Solar’s All of the power from them will be he adds. senior VP of project development sold to the Ontario Power Authority “We’re pleased to forge this new for North America. under long-term contracts. customer relationship with NextEra Peter Carrie, First Solar’s VP of The Solar Energy Centers will Energy Resources, a company that business development in Canada, each use thin-film technology on a shares our strong commitment to was also honored for his individ- fixed tilt system. Each 10MW project developing renewable energy in ual contribution to Canada’s will consist of more than 172,000 North America,” says Frank DeRosa, solar industry and received the panels. Collectively, the centers will First Solar’s senior VP of North ‘Solar Leader of the Year’ award. provide enough power to serve American project development. www.firstsolar.com about 6440 homes, and are www.NextEraEnergyResources.com 74 News: Photovoltaics 5N Plus’ sales match company record Ge-related acquisitions to supplement CdTe boom For its fiscal second-quarter 2011 petitive pressures on margins,” says facility in Wisconsin is operational, (to end-November 2010), 5N Plus president & CEO Jacques L’Écuyer. we believe that we are uniquely Inc of Montreal, Quebec, Canada The backlog of orders expected to positioned to service all of these has reported (in Canadian dollars) translate into sales within 12 customers and take advantage of revenue of $19.7m, up 5% on fiscal months is $62.6m, up on $57.4m the resulting anticipated growth in Q1’s $18.7m and up 24.8% on last quarter and $53.3m a year ago this market segment.” $15.8m a year ago (and equaling (despite changes in currency Construction is now almost the firm’s record of Q4/2010). exchange rates having an adverse complete on the new facility in Trail, 5N Plus produces high-purity impact of about $6.4m). “Our British Columbia for the subsidiary metals such as tellurium, cadmium, record backlog expanding by 18% Firebird Technologies Inc (which selenium, germanium, indium and in the past year reflects the contin- produces indium antimonide wafers antimony. It also produces II-VI uing strengthening of our base as well as antimony, indium and tin semiconducting compounds such business,” says L’Écuyer. pure metals), reports L’Ecuyer. as cadmium telluride (CdTe), “We continue to expect further “We expect the facility to be fully cadmium sulphide (CdS) and strengthening of our base business, commissioned during the fourth indium antimonide (InSb) as pre- especially in the solar sector, as quarter of the current fiscal year cursors for the growth of crystals our main customer in this market and Firebird to begin generating for applications including infra-red continues to grow and to demon- significant germanium-related detectors for night-vision systems, strate leadership in terms of cost revenues in the first quarter of radiation detectors for medical effectiveness,” L’Écuyer says. fiscal 2012. Together with the imaging, and thin-film photovoltaic “Developments made by our other investment made in Sylarus [which cells for solar panels. customers in this market remain produces germanium substrates in Net earnings from continuing encouraging, and we were particu- Saint George, UT, USA] and operations were $4m, up 24.9% on larly delighted in this respect to announced recently, this will form $3.4m a year ago. “This is our hear of the recent announcement the basis of our germanium-related fourth consecutive quarter in which made by the US Department of activities and position us as one of sales and earnings have reached Energy concerning the $400m loan the leading producers of germanium respectively in the $19m and $4m guarantee granted to Abound products for electronic applications,” ranges, despite the appreciation of Solar,” he remarks. “Now that our he believes. the Canadian dollar and some com- new photovoltaic module recycling www.5nplus.com

5N Plus converts $3m debenture to Sylarus into majority stake 5N Plus Inc of Montreal, Canada, tal requirements and development applications,” says 5N Plus’ a provider of high-purity metals, expenses as needed. president & CEO Jacques L’Écuyer. compounds and wafers for Sylarus is a key customer of 5N “5N Plus is now one of the leading electronic applications, has agreed Plus’ subsidiary Firebird Technolo- producers of germanium, with a to convert the US$3m debenture gies of Trail, British Columbia, full range of related products for provided on 21 June 2010 to Canada (acquired in December the infrared optics, LED and Sylarus Technologies LLC of Saint 2009), which provides high-purity photovoltaic markets, as a result George, UT, USA (which produces germanium feedstock and corre- of Firebird’s product portfolio and germanium substrates for manu- sponding recycling services for supply agreements with Teck facturing multi-junction compound germanium-containing residues. Metals,” he claims. semiconductor photovoltaic cells) 5N Plus’ Jean Bernier will act as “Although the acquisition of into a 66.67% majority interest. general manager of Sylarus until Sylarus is not expected to be 5N Plus has also agreed to further notice. immediately accretive, as Sylarus provide additional funding of “They are one of the very few gradually ramps up production and US$766,000 in the form of germanium substrate manufactur- completes its development work secured debt to enable the re- ers qualified for space applications we expect that, within a 24 month payment of short-term debt and are well positioned to take period, it will have a positive impact contracted by Sylarus. In addition, advantage of the anticipated on the earnings of the group,” 5N Plus intends to support Sylarus growth in concentrator photo- L’Écuyer reckons. capital expenditures, working capi- voltaics [CPV] for terrestrial http://sylarus.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 75 Abound closes $400m DOE loan guarantee and $110m equity investment CdTe PV firm secures Indiana site for expansion to 840MW Cadmium telluride (CdTe) thin-film boost capacity to 200MW per year “We appreciate the support of the photovoltaic (PV) module maker by the end of 2011) and later at a local community and its leaders Abound Solar of Loveland, CO, USA second site in Indiana which, when that have helped to make this has closed on a $400m loan guaran- completed, will create 1200 new happen,” says president & CEO tee from the Department of Energy. manufacturing jobs. Tom Tiller. When both plants are It has also raised a extra $110m Abound has leased a 781,750ft2 complete, Abound will be able to in equity financing from existing facility in Tipton, IN on a 104 acre produce more than 840MW of solar investors Invus Group, Bohemian site. An investment group led by modules annually. Companies, DCM, and Technology real-estate development firm W.W. “Abound Solar’s strong partnership Partners, joined by new investors Reynolds Companies of Boulder, CO with a growing list of industry-leading BP Alternative Energy Ventures and bought the facility from the trust of customers gives us the confidence West Hill Companies. This increases contractors that had held the prop- to make these large investments to Abound’s equity financing to about erty since the 2009 bankruptcy of meet the strong demand for our $260m since the firm’s inception in former owner Getrag Transmission product,” says Tiller. 2007 (since when Abound has built Manufacturing LLC. Abound has “Over the past three years, the its first production line in Longmont, entered into a long-term lease with company’s management team and CO and begun full-scale commer- W.W. Reynolds Companies that employees have proven their ability cial operations in November 2009). enables it to make the necessary to execute and build an innovative The debt and equity financings will property improvements to facilitate manufacturing platform that enables enable Abound to expand capacity the development (beginning in the company to significantly reduce at both its Longmont facility (where 2012) of a solar module manufac- the cost of solar electricity,” claims it has already begun construction of turing plant with an annual capacity chairman Doug Schatz. a second manufacturing line to of 640MW per year. www.abound.com

Surrey Satellite Technology wins €10.69m ESA contract; MCT to improve on InGaAs in SWIR detectors

Surrey Satellite Technology Ltd carbon monoxide (CO) and methane Sentinel 5 Precursor builds on

(SSTL) of Guildford, UK has won a (CH4) — the latter being the second developments of TROPOMI, which €10.69m contract from the Euro- most important anthropogenic is led by Dutch Space as prime pean Space Agency (ESA) via greenhouse gas. After completion contractor. TROPOMI, which is co- Dutch Space to provide a short- of ESA’s Envisat Mission, the funded by The Netherlands and wave infrared (SWIR) spectrometer Sentinel 5 Precursor mission aims ESA, includes much improved SWIR as part of the Tropospheric Ozone to provide a source of accurate and measurements compared to the Monitoring Instrument (TROPOMI) detailed data, allowing scientists to SCIAMACHY instrument onboard for the Sentinel 5 Precursor atmos- continue to study both air quality Envisat. A push-broom replaces pheric monitoring mission. and climate change until Sentinel 5 SCIAMACHY’s scanning instrument, The Optical Payloads Group of SSTL is launched in the next decade. “It providing much smaller pixels (which is owned by EADS Astrium NV) is imperative that we maintain the (7km2 x 7km2 vs 120km2 x 30km2), will coordinate an industrial consor- excellent atmospheric and environ- and the measurement sensitivity is tium including the Netherlands mental data provided by Envisat,” also greatly improved. Immersed Institute for Space Research (SRON) says SSTL’s Dr Matt Perkins. grating technology will increase the and France’s Sofradir — which “Climate change and air quality effective resolution of the instru- makes cooled IR detectors based are global issues requiring the best ment without increasing the size on mercury cadmium telluride scientific and technical approaches and mass of the module. (MCT/HgCdTe) for military, space and we are very proud that the UK Also, the MCT detectors should be and industrial applications — to has the technology and experience less susceptible to in-flight radia- procure and integrate the precision to lead such an important European tion damage than the near-infrared remote sensing instrument. space project,” says Dr Ruth (NIR) extended-wavelength InGaAs The SWIR spectrometer will be Boumphrey, head of Earth Obser- detector arrays on board Envisat. used to measure atmospheric vation at the UK Space Agency. www.sstl.co.uk www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 76 News: Photovoltaics

IN BRIEF Solyndra enhances Italian Ascent appoints architectural landmark with new Norsk Hydro 370kWp rooftop PV system board member Ascent Solar Technologies Inc of Solyndra Inc of Fremont, CA, USA, Finpiemonte. “The lightweight sys- Thornton, CO, USA, which makes which makes cylindrical copper tem did not require additional engi- CIGS-based flexible thin-film indium gallium diselenide (CIGS) neering or penetrations of the roof. photovoltaic modules, has photovoltaic (PV) systems consist- This protected the integrity of the appointed Hans Olav Kvalvaag to ing of panels and mounting hard- building and the quick installation its board of directors to replace ware for commercial rooftops, has meant there was minimal disrup- Einar Glomnes, who has resigned completed a 370kWp rooftop solar tion to our business,” he adds. from the board. system on an architectural land- “The Solyndra system allowed Kvalvaag was designated for the mark in Valenza Po, Italy owned by more power peak density than appointment by largest stock- Finpiemonte Partecipazioni S.p.A., competitive systems, and therefore holder Norsk Hydro Produksjon AS a holding of mixed private/public creates a greater revenue stream,” pursuant to a stockholder’s enterprises in the Piemonte region. says ARDEA’s CEO Dr Pierpaolo agreement with Ascent. Norsk The building holds the Palaexpo Carini. “We were pleased with how Hydro’s prior board designee Jewelry Company. quickly and easily the system could Glomnes was recently promoted Designed and built under a power be implemented, and it is already to VP sales Europe and has purchase agreement (PPA) in generating power.” assumed an expanded role with conjunction with energy company “This project is a great example of additional commitments within ARDEA Energia S.r.l. and local why Italy continues to be a strong Norsk Hydro. He is therefore no utility firm EGEA, the 370kWp sys- market for Solyndra systems,” says longer able to devote adequate tem consists of about 2030 panels Clemens Jargon, Solyndra’s president attention to his board position. and took about three weeks to be of EMEA and managing director Kvalvaag joined Norsk Hydro in installed by Gruppo Caraglio, a local Solyndra GmbH. “Working closely 2006 within its New and Alterna- energy performance contractor with ARDEA Energia and the local tive Energy group. He is currently (EPC) selected by ARDEA Energia. utilities, we were able to design a part of the firm’s Corporate The system has been nominated as system that generates the most Business Development team. He one of the best Italian rooftop PV possible power from their rooftop holds a law degree from Norway’s installations for 2010. to take advantage of government University of Oslo, and finance “The Solyndra system also com- incentives, while not requiring diplomas from the Norwegian plements the fine architecture of re-engineering of this well known School of Business Administration our building in several important building.” and the University of Auckland. ways,” says Dr Paolo Marchioni of www.solyndra.com He has worked as a management consultant with McKinsey & Com- pany and further as a lawyer with Norwegian law firm Selmer, focusing primarily on the Energy and Oil & Gas arena. “I would like to thank Einar for his significant contributions to Ascent Solar’s growth and progress. We wish Einar the very best as he expands his responsi- bilities at Norsk Hydro,” says Ascent Solar’s president & CEO Dr Farhad Moghadam. “We also welcome Hans to our board and look forward to benefitting from his expertise and insights, as well as continued support from Norsk Hydro.” www.ascentsolar.com 370kWp Solyndra system on a rooftop in the Piemonte Region of Italy.

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 77 DayStar eliminates $5m of debt as strategic partnership talks continue At its 2010 Annual Shareholder terms of certain convertible notes agreements, contract manufacturing meeting on 30 December, DayStar and warrants, including the issuance agreements, a reverse merger with Technologies Inc of Milpitas, CA, of shares upon conversion of such or an acquisition of DayStar.” USA, which is developing copper notes or exercise of such warrants. “We appreciate the continued indium gallium diselenide (CIGS) Shareholders also approved an support of our vendors and other thin-film photovoltaic products, amendment to the firm’s Amended stakeholders,” says Ryde. “This announced that it has entered into and Restated 2006 Equity Incentive past year has had its challenges, a series of agreements with a Plan to increase the number of but we are pleased with our number of its vendors to eliminate shares available for issuance under progress towards completing crucial an additional $5m in debt from its the plan, and the ratification of activities to enhance our ability to balance sheet in exchange for Hein & Associates LLP as independ- pursue strategic transactions to shares of its common stock. ent auditors. manufacture our CIGS modules.” Last October, Socius CG II Ltd “The key support of our share- Last July, Ryde said that, “while entered into agreements with 14 of holders and creditors has helped us DayStar has accomplished signifi- DayStar’s vendors to purchase to maintain a key component of our cant innovations with our CIGS about $1m of the firm’s debt, and attractiveness to strategic partners,” process and technology, we have settled the resulting amounts owed says CEO Magnus Ryde. “We have encountered challenges in obtain- in exchange for free-trading shares made significant progress in ing affordable capital for the build- of DayStar’s common stock. restructuring our balance sheet out and operation of our facility in At the meeting, shareholders which should better position us as Newark... We are pursuing oppor- elected six directors (Peter Lacey, we continue our discussions with tunities to manufacture our CIGS Magnus Ryde, Jonathan Fitzgerald, potential strategic partners,” he modules offshore and have begun Richard Green, William Steckel, and adds. “The partnerships we are discussions with several potential Kang Sun) to a one-year term. pursuing, if consummated, could partners to implement this strategy.” In addition, they approved the include joint ventures, licensing www.daystartech.com

Avancis’ PowerMax CIS photovoltaic module obtains MCS certification for UK market

Avancis of Torgau, Germany panels comply with all approval mum energy efficiency and high (a subsidiary of Saint-Gobain of conditions for sale in the UK. The yields, even at low levels of sunlight Courbevoie, France since autumn British certification mark is an inde- and under diffused light conditions,” 2009), which makes thin-film pendent, internationally recognized says quality director Dr Tom Clarius. photovoltaic modules based on symbol of product quality and safety. “The MCS certificate and the partic- copper indium selenide (CIS), has As well as strict product tests, the ular suitability of our modules for completed key certification assess- certification process also involved use in coastal areas ensure that we ments for its PowerMax product line inspection and certification of the are ideal candidates for the British to ensure entry into the UK market. production facilities themselves. market as well as for other countries The modules have been awarded Before obtaining BSI certification, with coastal regions,” he adds. the MCS (Microgeneration Certifica- the PowerMax panels passed the PowerMax panels are also certified tion Scheme) certificate, after hav- German certification body TÜV in compliance with IEC standards ing also recently passed salt water Rheinland’s salt spray test in com- 61646 and 61730 and are and salt spray certification tests. pliance with IEC 61701, meaning approved according to the strict The panels are thus certified as that they are specifically suitable requirements of the American UL being suitable for use in systems for use in coastal areas, as they 1703 standard. The CIS panels are along coastal areas and are pro- offer particularly effective resist- also designed for areas exposed to vided with incentives under the UK ance to salt water and salt spray. high wind and snow loads, and are feed-in tariff system, the clean “Thanks to its favourable perform- able to withstand 551kg/m. energy cash back scheme. ance in weak light conditions and Avancis also works with a large The MCS certificate has been the superior sensitivity spectrum of number of distributors who market awarded by the British Standards CIS technology, PowerMax offers PowerMax panels in the UK. Institute (BSI), certifying that the British PV system operators opti- www.avancis.de/en www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 78 News: Photovoltaics Sol Array unveils CIGS cell for 20MW pilot production

Sol Array LLC of San Francisco, CA, lowest cost for volume production, ●Repeatability in thin-film stack USA has unveiled its first copper reckons Sol Array (amenable to thicknesses and uniformity, where indium gallium diselenide (CIGS) large-area, automated production); the combined thickness of the thin-film solar cell, which is made ●CIGS films retain performance active layer is just 1.8m, with the using a unique, highly adaptable properties better than most other thinnest layer no more than 50nm process tailored for mass production. solar semiconductors. (a precision-controlled, pulse DC The process uses commercially In the commercial solar industry sputtering process is an ideal available, inexpensive soda-lime as a whole, there is a trend towards approach); glass as substrate material, a CIGS, claims Sol Array, with Honda ●Repeatability in stoichiometry simplified continuous in-line PVD Soltec, Shell, Daystar, Ascent Solar, between thin-film layers is equally process for deposition of all CIGS Global Solar, HelioVolt, Miasole and critical. An experiment at an affili- thin-film stacks, and a four-element Nanosolar all pursuing volume pro- ated research institute, using pulse compound target for simple one-step duction. DC sputtering for four-element deposition. This eliminates the In laboratory research, the pursuit compound deposition and without cumbersome co-evaporation of of alpha-phase CIGS is approaching selenization, has delivered a high- various CIGS elements for forming maturity, hovering at about 20%. density, pin-hole-free thin-film stack. the active CIGS layer, ensuring The immediate challenge rests with The proportion of each element consistency and repeatability in commercializing CIGS cells, aiming copper, indium, gallium and selenium mass production, and achieving for a high-volume, low-cost, repeat- in the active layer (where alpha- highly efficient and low cost manu- able process for economic vitality. phase CIGS can tolerate no more facturing, it is claimed. As well as drawing on a network of than 0.5% deviation in atomic weight Sol Array has based its research in expertise in US and European of any element) is equally critical — the US and its volume production in research institutions for product only a fully automatically controlled Dong Guan, China, where govern- development and patent revenue, process can come close to deliver- ment stimulus funding is available. Sol Array has ing the required repeatability; Headed by a veteran of the flat- established Sol Array says ●Repeatability in crystal lattice panel display industry, Jimin Ma its main that a 20MW arrangement — a stringent and has assembled a team of thin-film manufac- pilot-production difficult requisite for conventional technologists and automation turing base evaporation techniques to synchro- specialists for product development in China, not line using its nize is now replaced by Sol Array’s and system engineering. only for the process and PVD approach; The global thin-film PV market is benefit of system ●Commercialization calls for large- expected to reach $7.2bn by 2015, long-term engineering scale, low-cost production; the use compared to just over $1bn in 2007, production of a dense four-element solid CIGS according to a report by NanoMar- cost control will start up in target for uniform thin-film thickness kets; annual thin-film solar produc- but also to early spring and high-percentage material recla- tion has now surpassed half the US tap growing mation is best suited to Sol Array’s market share and will do so world- market demand there. in-line sputtering process, giving wide by 2015. Also, within thin-film Collaboration presently extends what is claimed to be the lowest solar, CIGS should surpassed CdTe through the USA, Europe and material consumption for volume and amorphous silicon by 2012, China, with vacuum deposition production; reckons Information Network, facilities tailored to mass production. ●Use of a fully automated, in-line manifested by the following: Sol Array’s core management was PVD system promises a highly syn- ●CIGS has the highest theoretical transferred intact from the former chronized and repeatable produc- conversion efficiency; it can absorb thin-film flat-panel display firm tion process, ensuring a consistent over 99% of the solar spectrum and Lite Array Inc. Cross fertilization of interface between the p-type CIGS has the highest current density. the founding team between the absorbing layer and the doped sur- Of all thin-film solar technologies, thin-film display and thin-film solar face n-type layer near the interface CIGS has the highest efficiency for industries has facilitated a high-yield, CdS buffer layer, says the firm. laboratory samples (20.5% for high-volume and cost-effective Sol Array says that a 20MW pilot- small-area, experimental cells). production process, says Sol Array. production line using its process ●CIGS is free from adverse envi- To achieve a commercially viable and system engineering will start up ronmental impact and is not threat- production method and to attain in early spring, pending the infusion ened by poisonous by-products alpha-phase CIGS thin-films, of additional capital (to be raised such as Te in CdTe thin film cells; Sol Array says that it has overcome from on-going funding activities). ●CIGS has the potential to be the the following challenges: http://solarrayllc.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 79 SoloPower to build panel production plant in Oregon $20m in Oregon State loan supplements $51.58m venture funding

SoloPower Inc of San Jose, CA, USA, and finance construction of a new “We are committed to supporting which makes flexible, lightweight plant. Previously, SoloPower (which the solar industry help fulfill copper indium gallium di-selenide was founded in 2005) raised $230m national and state goals furthering (CIGS) thin-film photovoltaic (PV) in 2008 alone, followed by $44.9m sustainability and energy independ- cells and modules using a proprietary in debt financing last February. ence,” says Wilsonville’s mayor roll-to-roll electro-deposition process, The Oregon State programs aim Tim Knapp. “The City is partnering is to locate a new high-volume to enable the firm to rapidly scale with Business Oregon with the help manufacturing plant in Wilsonville, OR. up production, while providing an of Clackamas County to promote The Small Scale Energy Loan Pro- economic boost to the community, smart job-growth in the private gram (SELP) Advisory Committee creating jobs and supporting local sector,” he adds. recommended approval to the businesses. The initial phase of the “Over the past year, SoloPower Oregon Department of Energy for a expansion will be the construction has considered several alternative $20m loan to SoloPower. The firm of a 75MW manufacturing line that sites,” notes CEO Tim Harris. has also applied for a Business will create 170 jobs. Upon comple- “Oregon is an exceptional location Energy Tax Credit (BETC) of $20m tion, the facility is expected to for our long-term growth,” he adds. from the State of Oregon. involve a total investment of about “SoloPower greatly appreciates the The State funding supplements $340m, employ about 500 staff, partnerships it has formed with the $51.58m in equity and warrant/option and have capacity of 300MW, State of Oregon, the Oregon financing raised last month from greatly enhancing SoloPower’s Department of Energy, Clackamas existing investors Crosslink Capital ability to provide modules to its County and the City of Wilsonville. (of San Francisco), Convexa A/S growing list of global customers. Oregon’s business friendly environ- (of Oslo, Norway) and Hudson Clean SoloPower is also in discussions ment, excellent support programs, Energy Partners LP (of Teaneck, NJ), with the US Department of Energy and highly skilled work force made according to a filing with the US to obtain a loan guarantee under locating our new manufacturing Securities & Exchange Commission Section 1703 of the Energy Policy Act facility in Oregon an easy decision,” in order to expand SoloPower’s of 2005 to support the construction Harris concludes. existing 109,000ft2 San Jose plant of the additional production lines. www.solopower.com SoloPower launches most powerful, certified flexible CIGS module SoloPower has expanded its standards as the SFX1 recently aperture efficiency barrier for product line to include the newly did, we can deliver powerful, production line modules is an certified SFX3 module. lightweight products optimized for added bonus,” says Harris. Capable of producing up to 260Wp, use on both low-slope and stand- SoloPower has improved aperture the SFX3 is claimed to be the most ing-seam metal roof systems in efficiency from 11.2% to 12.1% powerful, certified, flexible thin-film Europe, North America and Asia,” over the past 6 months while CIGS module on the market. It he adds. beginning to deliver products to complements the narrower SFX1 At just under 0.5lb/ft2, the SFX1 the global market. module, which was the first flexi- (up to 85Wp, 0.292m x 3.05m, “Our high power SFX3 panel ble CIGS module certified to both 2.27kg/5lbs) and the SFX3 enhances the company’s position UL 1703 and IEC (61646 & 61730) (up to 260Wp, 0.88m x 3.05m, in the flexible solar segment and standards. 6.8kg/15lbs) weigh much less demonstrates our drive to lower the “Achieving the certification of than traditional solar panels, which cost of solar power to grid parity,” both our wide and narrow modules are often too heavy to be placed in says chief technology officer to the necessary UL and IEC large numbers on older buildings, Mustafa Pinarbasi. standards [achieved through the firm says. SoloPower is in the process of Intertek and TÜV SÜD America Inc, SoloPower’s aperture efficiency shipping SFX1 and SFX3 modules respectively] allows us to provide also continues to improve, with the to customers in Australia, Belgium, efficient and cost-effective solutions US National Renewable Energy France, Germany, Japan and Korea to a broad range of market chan- Laboratory (NREL) measuring flex- and to multiple locations in North nels and geographies,” says CEO ible modules made on the firm’s America. Packaged in a durable, Tim Harris. “With the SFX3 module production line as high as 12.1%. lightweight, flexible form, demand passing the same certification “Breaking through the 12% is rising rapidly, says the firm.

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 80 News: Photovoltaics Stion to site mass-production facility in Mississippi State incentive lures San Jose-based CIGSSe PV firm

Stion Corp, which has initial 10MW- The project’s first phase includes a a Series B financing round led by capacity manufacturing and R&D line with annual capacity of 100MW Lightspeed Venture Partners and facilities for its nanostructure-based in Hattiesburg, MS — to come on joined by General Catalyst Partners thin-film solar panels in San Jose, line in 2012 — entailing over $100m along with previous investors CA, USA, is to build its first mass- of investment and creating 200 Khosla Ventures and Braemar production facility in Mississippi as direct jobs in 2011 and 2012, says Energy Ventures. Last June, these part of an incentive agreement with Stion. Over the next six years, the added $20m to $50m invested by the state that includes a $75m loan project should deliver more than the world’s largest semiconductor and other tax and training incentives. 1000 jobs and $500m of investment. foundry Taiwan Semiconductor The project will be the first thin-film “Together, the state of Mississippi, (TSMC) — via its affiliate VentureTech solar panel factory in Mississippi. Forrest County, and the city of Hat- Alliance — in a $70m Series D Stion’s product line features tiesburg offer a business-friendly round of fundraising to help scale 65cm x 165cm glass–glass copper- location with a strong resource production (boosting the total indium-gallium-sulfide-(di)selenide base for manufacturing,” says raised since 2006 to $114.6m). (CIGSSe) PV panels using mono- Stion’s president & CEO Chet Farris. “Our expansion in Hattiesburg is lithically integrated circuits. With a “In partnering with them, we are an integral part of our capital- form factor of 65cm x 165cm, effi- pleased to help address this country’s efficient scale-up plan,” says Farris. ciencies of at least 11% and power energy needs with clean technol- “The cost and time-to-market ratings of 110–120W, the modules ogy, and support the region’s and advantage of building here will are usable in all major markets, the nation’s economy,” he adds. provide a significant competitive including commercial/government, Founded in 2006 as Nstructures, advantage,” he reckons. residential, utility and off-grid. Stion raised $15m in June 2007 in www.stion.com

W Solar to move to Wisconsin and enter production CIGS PV panel maker gets $28m tax credits to help create 620 jobs

Wisconsin Governor Jim Doyle says The firm expects to open its new The firm has also made a commit- privately owned W Solar Group Inc headquarters and R&D facilities in ment to buy materials and services of Chatsworth, outside Los Angeles, first-half 2011 and to begin manu- from Wisconsin suppliers in an CA, USA, which has developed facturing in 2012. Conditions for effort to create or retain additional copper indium gallium (di)sellenide the state incentives include targets jobs. (CIGS) thin-film photovoltaic panel for creating jobs in 2013 and 2014 Wisconsin claims to be a national technology, will receive up to $28m prior to full-capacity production in leader in solar installations, with in Enterprise Zone tax credits from 2015, when W Solar expects the firms assisted by the Department the state Department of Commerce number of full-time jobs created to of Commerce previously including to help it to set up a manufacturing reach 620 (mostly in production). Cardinal Glass, 5N Plus, PDM Solar, facility in the state and to relocate Capital investment should amount ZBB Technologies, and Helios. its corporate headquarters and to more than $300m. The firm says Last October, 5N Plus Inc of R&D facilities to Dane County. that the projected global market for Montreal, Canada, which provides W Solar was founded in 2009 and solar panels is expected to grow high-purity metals (including has less than 20 staff, all in R&D. more than tenfold over the next cadmium, indium and selenium) The firm is considering specific decade, and that it expects about as well as related II-VI compounds locations for the new site. “W Solar half of its production to be exported such as cadmium sulphide, said choosing to locate its manufacturing to overseas markets. that its US subsidiary 5N Plus Corp facility in Wisconsin is a testament to “W Solar Group was attracted to of DeForest, WI had been awarded the hard work we’ve done over the Wisconsin early in our search for a $500,000 in funding from the State past 8 years to build a strong sector project location,” says W Solar’s Energy Program of Wisconsin to of our economy around clean energy president & CEO Chris Hamrin. “We support an expansion of its solar and high-end manufacturing,” says are impressed with the high-quality modules recycling and its manufac- Doyle. “This investment will create workforce, extensive supply chain, turing of specialty compounds for new business opportunities and jobs and the commitment to producing thin-film PV applications. at suppliers throughout the region.” world-class products,” he adds. www.wsolar.com

semiconductorTODAY Compounds&AdvancedSilicon • Vol.5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com News: Photovoltaics 81 AQT to site second manufacturing plant in South Carolina Annual capacity of 1GW and 1000 jobs targeted by 2014

Privately held AQT Solar of Sunny- vale, CA, USA has selected a 184,000ft2 LEED Silver Certified facility in the Carolina Pines devel- opment in Richland County, SC as the site of its second copper indium gallium diselenide (CIGS) thin-film solar cell manufacturing plant. AQT opened its first R&D and manufacturing facility in Sunnyvale (close to the firm’s former base in Santa Clara) just last August, with customer shipments starting in December. Annual capacity should Exterior of AQT Solar's South Carolina facility. rise from its initial 15MW to its full 30–40MW capacity by the end of [since being founded in 2007],” Commerce, the Central SC Alliance 2011, only partly fulfilling AQT’s says CEO Michael Bartholomeusz. and Richland County,” he adds. existing order backlog of 160MW The firm uses a proprietary process “Our team has been working with (50MW of which is due in 2011). (allowing continuous in-line produc- the company for the past several However, phased build-out of the tion) together with manufacturing months on this competitive project,” new site in South Carolina will start platforms field-proven in the hard- says Mike Briggs, president & CEO of with equipment installation in disk-drive industry. Last April, a Central SC Alliance (a not-for-profit first-half 2011, targeting 30–40MW strategic partnership was agreed public/private partnership that annual production capacity and the for Santa Clara-based Intevac engages in the recruitment of capital creation of 60 jobs this year (help- (which designs and makes high- investment and job creation in ing to meet the backlog). The facil- productivity sputtering-based central South Carolina). “The Uni- ity should grow to annual capacity manufacturing systems) to supply versity of South Carolina research of about 1GW by the end of 2014, equipment to AQT. Also last April, initiatives and Innovista, Midlands creating 1000 jobs in total. AQT closed a $10m second round Technical College and Richland AQT says that South Carolina’s of venture funding to finance con- County’s business friendly attitude strong market for clean energy and struction of the Sunnyvale facility. helped solidify this deal,” he adds. favorable business climate make it “We are excited to work with the Led by a project management team, an attractive location for its second state of South Carolina as we begin South Carolina’s readySC workforce plant, and the large number of uni- this next phase of our company’s recruiting and training program is versities and technical colleges in the development,” adds Bartholomeusz. working with AQT to assist with region provide a trained labor force. “We appreciate the extraordinary recruitment as well as customized “AQT Solar has achieved significant assistance we received from the training design and delivery. growth in a short period of time South Carolina Department of www.aqtsolar.com

AQT announces first customers shipment of modules The first shipment of modules con- commercialization validates AQT’s tion, build-out, line implementa- taining AQT’s CIGS thin-film solar ‘CIGS 2.0’ business model as a tion and qualification, and produc- cells has been made. AQT has also capitally efficient solution that tion initiation completed in under shipped cells to several customers. leverages partnerships to reduce eight weeks. AQT says that the The first shipment rounds out a costs and time to market while small footprint of each highly auto- year of rapid progress and growth, increasing scalability. Between mated machine provides efficient including opening a fully operational revenue and order pre-payments, use of space within the 20,000ft2 facility in Sunnyvale in August. the firm is now generating cash. facility. The firm can hence scale The commercial milestone was As well as using ‘off-the-shelf’ up the plant to an annual produc- achieved in just two years and equipment from Intevac, Sunny- tion capacity of 60MW in an area with a little over $20m in funding. vale’s modular design allowed quick many times smaller than its near- The rapid path from inception to on-site deployment, with prepara- est competitors, it is claimed.

www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 82 Technology focus: LEDs Taiwan researchers make steps to improve LED output Stepped quantum wells improve electron capture in active region, boosting output by 63%.

aiwan’s National Cheng Kung University (NCKU) Thave used a stepped series of quantum wells to improve electron injection into indium gallium nitride (InGaN) LEDs by 63% over a comparison conventional LED at 20mA current [Shyh-Jer Huang et al, Appl. Phys. Express, vol3, p122106, 2010]. The improve- ment over a non-stepped (dual-stage) structure was 20%. The aim of the research was to improve electron capture rates in multi-quantum well (MQW) LED structures. The researchers relate their work to that carried out by NCKU with charge asymmetric resonance tunneling (CART, 2002) and dual-stage structures (2007) that are used to control the injection of electrons into the MQW light- emitting region. In particular, one wants to avoid overshoot of Figure 1. Stepped electron-emitting layer (EL) LED structure and illustration of the electrons over the MQW flow rate for controlling In composition. EL with six QWs is taken as an example. region, which then recombine in

the p-contact region, producing mainly heat and provided by bis(cyclopentadienyl) magnesium (Cp2Mg) unwanted radiation. and the silicon n-doping by disilane (Si2H6). In CART, the ‘electron-emitting layer’ (EL) consists of A variety of LED structures were produced, including a thick InGaN region, out of which the electrons are one without an electron-emitting layer (Sample A). expected to tunnel into the MQW. However, thick InGaN Sample B was a dual-stage structure consisting of six

tends to introduce defects into subsequent layers, 3nm undoped In0.1Ga0.9N quantum wells with 12nm killing performance. Si-doped GaN barriers. Three further devices were pro-

The new work modifies the dual-stage approach duced with stepped 3nm undoped InxGa1–xN wells and where one has two sets of MQWs — one as an EL and 12nm Si-doped GaN barriers. The indium content of the the other as light-emitter/active region. The new varia- wells was varied linearly (as determined by In source tion grades the EL MQW structure from small wells flow rate). Samples C, D and E had four, six and eight near the n-GaN region to deeper ones next to the wells, respectively. active region. The MQW active region of all devices consisted of five

The researchers used metal-organic chemical vapor In0.21Ga0.79N wells and GaN barriers. The p-contact deposition (MOCVD) to create their epitaxial structure region consisted of 0.2m of GaN. The structures were (Figure 1) on c-plane GaN substrates. Trimethyl-metals converted into devices using standard LED processes. (TM-) were used for the In and GaN sources; ammonia Before this, the structures were analyzed using provided the nitrogen. The magnesium p-doping was high-resolution x-ray diffraction (HR-XRD) and photo-

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Technology focus: LEDs 83 luminescence (PL) from excitation by 325nm light from a helium–cadmium laser. The x-ray analysis suggests that the dual-stage and graded EL regions also act as strain relaxer/buffer, resulting in better material quality in the subsequent MQW active layers. The greater photoluminescence with EL layers over structures without EL layers supports this analysis. In terms of electrical performance, the I–V curves show a reduced forward voltage for the EL devices. It is believed from this that a further benefit of the EL layer is to give a better spread- ing of current in the LEDs. At low currents Figure 2. Light output vs current characteristics for conventional, dual-stage and stepped (<10mA), the light out- LEDs (samples A, B, and D, respectively). puts are similar. How- ever, as the current increases the curves separate Program for Academia), and Taiwan’s National Science (Figure 2). The stepped structure gives the highest Council. light output. At 20mA, the stepped LED has 63% and Virginia Commonwealth University (VCU) has also 20% increase in light output over the conventional and recently been using a modified scheme to inject elec- dual-stage devices, respectively. trons into LED active regions (www.semiconductor- In terms of the number of steps, the six-stage today.com/news_items/2010/AUG/VCU_160810.htm). (Sample D) device is a significant improvement over the The aim of the VCU approach was also to reduce the four-stage component (Sample C). However, going to electron overspill into the p-GaN layer by cooling the eight stages offers only a minimal bump in light output. electron distribution with a staircase injector. An MQW The research was carried out with money from the underlayer was employed to maintain material quality. university, ‘‘Lamp Development of White Light-Emitting http://apex.jsap.jp/link?APEX/3/122106 Diode for Local Lighting’’ TDPA (Technology Development Author: Mike Cooke

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www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 84 Technology focus: LEDs Modified p-type layer increases light output from nitride LED

Selective high barrier region under p-electrode boosts output by 12%.

esearchers at Taiwan’s National Cheng Kung RUniversity and National Kaohsiung Marine University have used a selective high barrier region (SHBR) created under the p-electrode of a nitride semiconductor LED to increase light output power by 12% [Ting-Wei Kuo et al, Jpn. J. Appl. Phys., vol49, p116504, 2010]. The purpose of the SHBR is to reduce photon absorption in the p-type gallium nitride (p-GaN) hole injection layer and to reduce current crowding under the p-electrode thick metal pad. Current crowding is a particular problem for non-vertical/lateral current flows that are typical in LEDs produced on insulating sapphire substrates. In such cases, both the p- and n- Figure 1. Cross-sectional sketch of traditional MQW LED on sapphire. electrodes have to be made from the ‘top’ of the device, and current crowding can Two effects were found to result from ICP treatment. occur near the ends of the current path (Figure 1). First, the Fermi level is moved away from the valence Localized high charge carrier densities can reduce band edge (as reveled by a shift in the Ga 3d spectrum luminous efficiency in GaN LEDs. of 0.45eV). The effect of this would be to reduce hole The SHBR was formed by using the inductively coupled carrier densities. Also, measurements of the nitrogen plasma (ICP) etch process that is also used to make 1s level suggest that there is an increase in N vacancies mesa structures in light-emitting devices and to reach in the GaN crystal structure. The Ga/N atomic ratio of the n-type contact in nitride LEDs produced on insulating the treated samples is found to be 1.42 relative to sapphire substrates. untreated samples that should have a ratio of 1. The effect of the ICP treatment was first investigated Noise and current/voltage electrical measurements using x-ray photoelectron The increased light on these samples confirm that the treated GaN spectroscopy (XPS) on becomes highly resistive. Transmission line method output is due to an samples consisting of a measurements give a specific contact resistance of magnesium-doped p-type increase in the hole 9.49x10–3-cm2 for the untreated GaN, which gallium nitride (GaN) layer current injected increases to 5.41x10–1-cm2 for the treated sample. (0.9m) on top of undoped into the active The researchers used the treatment (in combination  GaN (1 m) and sapphire region and a with photolithography) to create high-resistance substrate. XPS is performed regions in the p-GaN contact of a GaN-based LED. by measuring the energies reduction in optical The light-emitting region consisted of a five-period of electrons ejected from a absorption under indium gallium nitride (InGaN) multi-quantum well material by x-ray illumination. the electrode (MQW) structure with GaN barriers. The n-type GaN

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Technology focus: LEDs 85 layer under the MQW was silicon-doped. The layers were grown by metal-organic chemical vapor deposition. The SHBR was pat- terned and then an ICP etch was applied using a chlorine (Cl2):boron trichloride (BCl3):argon 10:3:1 mixture. The pressure was 5mTorr and the etch power was 400W with a radio-fre- quency power of 30W. Comparison devices were also produced with- out the SHBR. An ICP etch was also used to dig down to the n-GaN layer, forming mesas. The p-electrodes con- sisted of nickel-gold (Ni- Figure 2. Light emission patterns of LED devices at 1mA forward current without SHBR (a) Au). For the p-electrode and with SHBR (b). Locations of n- and p-electrode contacts and SHBR can also be seen. a thin layer of Ni-Au (2.5nm/6nm) was deposited first over the with SHBR p-GaN layer as a trans- without SHBR parent conducting layer. Then, thicker layers 4 4 (15nm/25nm) were used in a smaller area for a pad for wire bonding. The final step was annealing the devices at 400ºC in nitrogen for 10mins to create ohmic 2 2 contacts between the p-GaN and metal layers. The light intensity (Fig- ure 2) was measured for Forward voltage (V) both devices (Figure 3). While the SHBR device had a higher forward Light output intensity (arb.unit) voltage of 3.23V (com- 0 0 pared with 3.19V without) 0 20406080 at 20mA drive current, the output intensity was Injection current (mA) increased by 12%. The slight increase in forward Figure 3. Comparisons of forward-bias current–voltage and light output–current voltage is attributed to characteristics of LEDs with and without SHBR. reduction in the conduct- ing area of the SHBR p-GaN layer. The increased light http://jjap.jsap.jp/link?JJAP/49/116504 output is due to an increase in the hole current The author Mike Cooke is a freelance technology injected into the active region and a reduction in optical journalist who has worked in the semiconductor and absorption under the electrode, it is suggested. ■ advanced technology sectors since 1997. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 86 Technology focus: LEDs UCSB uses more uniform InGaN for record efficiency semi-polar green LED EQE boosted to 20.4% at 20mA by growing in (2021)– direction.

esearchers at University of California Santa in the InGaN and hence a large piezoelectric polari- Barbara (UCSB) have produced semi-polar zation electric field. Rgreen light-emitting diodes (LEDs) with The past few years have seen a number of research external quantum efficiencies of 20.4% [Shuichiro groups exploring different growth directions in nitride Yamamoto et al, Appl. Phys. Express, vol3, p122102, semiconductors with reduced (semi-polar) or even zero 2010]. The team also included one researcher each (non-polar) polarization. These efforts have not as yet from Sharp Corp and Mitsubishi Chemical Corp. reached the efficiency of c-plane devices, partly due to The team produced both green and green-yellow the immaturity of knowledge of how to grow high-quality LEDs using gallium nitride (GaN) crystal substrates material, partly due to new intrinsic difficulties. – – oriented in the (2021) direction. The substrates for the new UCSB (2021) LEDs were The electroluminescence of the green LED at 20mA prepared by slicing a c-plane GaN bulk crystal in the had an output power of 9.9mW and external quantum appropriate direction. The bulk crystal was grown efficiency (EQE) of 20.4% under pulsed operation using hydride vapor phase epitaxy (HVPE). (10% duty cycle). This changed only slightly by moving The LED semiconductor layers (Figure 1) were grown to DC operation, with 9.2mW output power and using metal-organic chemical vapor deposition (MOCVD). 19.1% EQE. The active region consisted of a single quantum well The researchers comment: ‘To the best of our knowl- (SQW) of 3.5nm-thick InGaN sandwiched between edge, these output powers and EQEs at a driving GaN barriers. An electron-blocking layer (EBL) consist- current of 20mA are the highest values that have ever ing of magnesium-doped AlGaN was used to keep the been reported for green LEDs grown on semi-polar/ electrons in the well region, and thus to increase non-polar planes.’ recombination as photons, rather than in the p-type The yellow-green LEDs had 5.7mW output power and Mg-doped GaN contact. 12.6% EQE under a pulsed current of 20mA. The DC A 250nm tin-oxide-doped indium oxide layer (ITO) figures were 5.2mW and 11.6%, respectively. was applied by electron-beam deposition and anneal- The researchers conclude: ‘These results suggest that ing to make a p-type transparent contact. Metal con- – (2021) GaN substrates could be one of the possible tacts were then applied, first to the n-GaN layer and substrates for high-power and high-efficiency LEDs then to the p-GaN layer. with green or even longer wavelengths.’ The backside of the GaN substrate was roughened to Researchers have been expending much effort to increase light extraction from the device. The diced improve green nitride LED efficiency. For the most LEDs were mounted on transparent zinc oxide material mature devices grown in the c-direction of the nitride as a submount and then packaged in silicone resin in a crystal structure, an EQE of 30% was reached in 2007. ‘vertical stand’ configuration (www.semiconductor- However, for these devices there are known effects today.com/news_items/2010/SEPT/UCSB_210910.htm). that hamper further progress. The most prominent of The emission peak wavelength of the green device these is the quantum-confined Stark effect (QCSE), was 516.3nm at 20mA. The peak wavelengths at 1mA where polarization electric fields due mainly to strain and 80mA were 529.9nm and 511.9nm, respectively. effects (piezoelectricity) tend to pull apart the electrons The shortening of the wavelength with current and holes that are desired to recombine into photons, (‘blue-shift’) is attributed mainly to the effect of the reducing efficiency. applied bias on the QCSE. The QCSE gets worse as the desired wavelength of An alternative explanation would be band-filling effects the device gets longer because one is trying to combine caused by potential fluctuations due to the inhomogene- light-emitting layers of higher-indium-content indium ity of the InGaN material. Band-filling is used to explain gallium nitride (InGaN) with a gallium nitride (GaN) a marked narrowing of the emission line spectrum in – substrate lattice parameter. This creates a large strain green LEDs grown on (1122) substrates in the low cur-

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Technology focus: LEDs 87 rent range. However, this behavior was not seen in the – (2021) green LEDs and the linewidths were about the same across the current range. The researchers believe – that by growing on the (2021) plane they have ‘sub- stantially improved’ the uniformity of the InGaN QW. The blue-shift observed of 4.4nm between 20mA and – 80mA was also smaller than that seen in (1122) devices, where a value of 12.4nm between 20mA and 100mA was previously reported. For the yellow-green devices, peak wavelengths were 572.5nm, 552.3nm, and 544.2nm at 1mA, 20mA, and 80mA, respectively. The 20mA to 80mA blue-shift of 8.1nm is larger than for the green device, but still – smaller than that of the (1122) green device. Line-width narrowing is also not observed in the yellow-green LEDs. At 10mA, the line-widths for the – green and green-yellow (2021) devices were 33.0nm – and 40.8nm, respectively. The published (1122) green device had a 42.5nm linewidth. The narrower line- Figure 1. Schematic of UCSB’s green and yellow-green – – widths of the (2021) devices are again taken as indica- LED device structures on (2021) substrate. tion that the InGaN layer had better uniformity and hence fewer potential fluctuations. http://apex.jsap.jp/link?APEX/3/122102 The operating voltages are rather high — i.e. 6.4V The author Mike Cooke is a freelance technology (green) and 6.8V (green-yellow) — indicating that the journalist who has worked in the semiconductor and upper layers (p-GaN and ITO) need optimizing. ■ advanced technology sectors since 1997.

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www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 88 Technology focus: Lasers SEI’s {2021}– semi-polar green laser lowers threshold current by 2–3x Improvement over c-plane nitride green lasers greater than expected.

apan’s Sumitomo Electric Industries (SEI) has density of states for holes and higher transition matrix presented detailed performance measurements elements for optical gain due to valence-band splitting Jof a series of green lasers diodes (LDs) based on are also seen as advantages of semi-polar structures. – its semi-polar {2021} free-standing gallium nitride Experiment has also shown the quality of InGaN layers – (GaN) substrates [Masahiro Adachi et al, Appl. Phys. to be more homogeneous on {2021} material, Express, vol3, p121001, 2010]. compared with c-plane grown films. A number of companies and other research groups SEI uses hydride vapor phase epitaxy (HVPE) to pro- – are racing to develop stable and efficient green laser duce its {2021} substrates. The company has man- diodes with a view to replacing bulky full-color projector aged to reduce threading dislocation densities to less systems that use an infrared diode to excite a second- than 10–6/cm2. The material is n-type conductive and harmonic generator material that creates green light. the resistivity (0.01-cm) is such that back-contacts Single laser diode solutions are already used to create can be used for vertical current flow through the device blue and red light. These are based on indium gallium (unlike with lasers diodes on insulating sapphire or nitride (InGaN) and aluminum gallium indium phosphide more resistive GaN). (AlGaInP) technologies, respectively. The epitaxial lasers diode layers with separate- The advantages of using a single laser diode based confinement heterostructures (SCHs) were deposited on nitride semiconductor technology are expected to using metal-organic chemical vapor deposition be compactness and stability. Nitrides are presently (MOCVD). Gain-guided (10m waveguide width) and preferred for this over II-VI semiconductor alternatives ridge-waveguide (2m) lasers diodes were produced. since they are expected to eventually have longer, The 600m-long cavities were produced along the – practical lifetimes. advantageous [1014] direction. Appropriate dielectric SEI produced the first true green nitride lasers diodes mirrors were used to minimize losses. last year, with devices having emission wavelengths Testing for thresholds was carried out using pulsed up to 531nm. Since then, other groups have achieved operation (0.5sec pulse, duty cycle 0.5%) at green lasing on traditional c-plane GaN. However, room temperature for the gain-guided lasers diodes. semi-polar devices are expected to perform better in Pulsed testing is often used to avoid self-heating effects. many respects due to a reduced polarization electric The ridge device were subjected to continuous wave field in the active layers. (cw) operation. Nitride semiconductors have both spontaneous and The threshold current in the 520–530nm green range piezoelectric (strain-dependent) polarization. Differ- was nearly half that of traditional c-plane devices (Fig- ences in these properties between different layers of ure 1). The current density threshold varied between material give rise to effective surface charges and 3.4kA/cm2 at 511nm and 5.4kA/cm2 at the longest hence electric fields in addition to those applied exter- wavelength of 533.6nm. The researchers credit opti- nally. These fields tend to pull the electron and hole mized quantum well structures and growth conditions carriers apart in the active region, making recombina- for these achievements. tion into photons (and hence laser light) more difficult. These results run in the face of theoretical expectations – This quantum-confined Stark effect (QCSE) hence that {2021} lasers diodes will have threshold current raises the threshold current for lasing. Hence, of 65% that of the equivalent c-plane device. In the researchers are keen to reduce threshold currents and long-wavelength region (>520nm) the semi-polar voltages, with a view to lower operating voltages and device is much better (2–3x lower) than the c-plane higher wall-plug efficiency. devices, and in the short-wavelength region it tends The polarization fields are strongest in the c-plane to be about the same as the c-plane device. direction. By growing nitride semiconductors in other The researchers comment: “The reason for the dis- crystal directions, the QCSE can be reduced. The lower agreement may be due to the differences in the crystal

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Technology focus: Lasers 89 quality between the semi-polar – {2021} and the c-plane lasers diodes, i.e. the difference in the compositional homogeneities of the InGaN quantum wells, which is not considered in the theoretical studies”. They add: “We believe the experimental results in this work indicate that the deterioration of the crystal quality of the InGaN active layers over 520nm is – much less severe for the {2021} plane compared to the c-plane”. The team also reports in more detail on ‘a typical ridge-wave- guide green LD in cw operation at RT lasing at the wavelength of 525.5nm’. The threshold cur- rent, current density and volt- age were 51.1mA, 4.3kA/cm2, and 6.38V, respectively. The slope efficiency was 0.15W/A. With the mirrors used, the out- Fig. 1. Dependence of threshold current density on lasing wavelengths. Open and – put power was 36.4mW under solid circles: gain-guided and ridge-waveguide green LDs on {2021} semi-polar cw operation at 25°C. planes, respectively. Triangle and diamond: LDs on c-plane published by Nichia The researchers plan further and Osram Opto Semiconductors. Solid and open symbols, including triangles and optimizations for high-power circles: cw and pulsed operation, respectively. Solid and broken lines are trend operation, with a report due in guides for the eye. the ‘near future’.

The T0 characteristic of the 525nm lasers diode respectively. These are slightly larger than the corre- threshold current temperature variation (proportional sponding measurements for Nichia’s c-plane devices: to exp(T/T0)) of 175K was measured using temperature 22.8° and 10.4°, respectively. control and pulsed operation. This compares with “This indicates that the symmetry and optical confine- – lower values for c-plane devices of 145K at 518nm ment of the {2021} green LD with InAlGaN cladding and 120K at 515nm measured by the Nichia group. layer are comparable to the conventional c-plane ■ A higher T0 indicates smaller variation of the threshold InGaN LDs,” says the researchers. with absolute temperature. http://apex.jsap.jp/link?APEX/3/121001/ Far-field pattern divergence was also measured at The author Mike Cooke is a freelance technology 2mW output and 25°C: the perpendicular and parallel journalist who has worked in the semiconductor and divergence angles at half power were 24° and 11°, advanced technology sectors since 1997.

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www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 90 Technology focus: Nitride lasers Corning probes optical losses in nitride laser at wafer level

Corning researchers finds that holes bound to Mg acceptors dominate waveguide loss in blue–green nitride lasers.

orning Inc has developed a method to assess The method’s accuracy depends on ‘bandtail’ states the internal optical waveguide loss of laser diode that re-emit photons with energy below the absorption C(LD) wafers at an earlier stage in the develop- band edge of the system. Nitride semiconductor quan- ment process, compared with alternative techniques tum well (QW) laser diodes constitute such systems [Dmitry S. Sizov et al, Appl. Phys. Express, vol3, with deep bandtails, giving Stokes shifts (i.e. red-shifts) p122104, 2010]. of more than 100meV. Typically waveguide losses are found by creating laser The Corning group applied its technique to blue to cavities of varying length. The Corning method instead green laser diode wafers built on both c-plane and works with wafers before such cavities have been semipolar free-standing gallium nitride (GaN) sub- constructed (usually by some plasma etch process). strates. The wafers, when formed into laser diodes, The waveguide losses increase threshold currents, and produced laser emissions in the wavelength range reduce differential and wall-plug efficiencies. 480–525nm. The photoluminescence was created The method (Figure 1) consists of exciting the material using 405nm blue laser diodes (as used in commercial with a laser spot and measuring the photoluminescence HD DVD and Bluray optical storage systems). at the edge of the wafer. By varying the position of the A wafer for ‘aquamarine’ laser diodes (with a lasing spot, the optical loss coefficient can be determined, by wavelength of 497nm) was found to have an optical assuming an approximate 1/R dependence of the light loss in the waveguide less than 2/cm before activation intensity as expected for two-dimensional radiation of the magnesium (Mg) doping used to create the hole confined to the waveguide layers. The researchers find injection p-type region of the device (Figure 2). The that the 1/R approximation is good (i.e. non-confined optical loss up to 520nm is attributed to the QW active transmission is negligible) for values of R (distance region. Longer than 520nm (the QW absorption edge), from spot to wafer edge) of more than 0.1mm and the losses are attributed to light leakage from the optical losses less than 100/cm. guide and absorption by the guide material. As the

Figure 1. Schematic of internal optical loss measurement setup.

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Technology focus: Nitride lasers 91

Figure 2. Optical losses of c-plane LD structure before and after p-type activation by rapid thermal annealing (a) and measured at 300K and 400K (b). wavelength gets longer, the confinement into the the Mg acceptors (140–210meV in GaN) is high com- waveguide weakens. The 2/cm loss figure for the pared with typical thermal energies (~26meV at 300K, waveguide is obtained by a suitable extrapolation back ‘room temperature’). This means that the free hole to the lasing frequency. concentration is about two orders of magnitude lower However, this loss is before activation of the p-type than the bound hole level (even at 400K). layer that is needed for such a device to operate as a Increasing the temperature of the structure to 400K laser diode. Before the activation, the Mg atoms are only increased the loss slightly — the researchers associated with hydrogen in complexes that make the comment: “Within the measurement accuracy there material insulating. These complexes were removed by is no difference in waveguide loss between these two the Corning team using a conventional rapid thermal temperatures apart from the QW absorption edge anneal (RTA) process in an oxygen/nitrogen atmo- shifting to longer wavelengths due to temperature- sphere. The effect of this was to increase the optical induced bandgap shrinkage”. The researchers put their losses of the waveguide structure to 8–9/cm. These measurement error as being of the order of 1/cm. compare with internal optical losses of more than Since the increase in temperature should increase 10/cm that have been published for state-of-the-art the number of free holes significantly, the researchers blue–green LDs. come to the conclusion that they do not contribute Since the increase The increase in optical significantly to the waveguide loss. Rather, it is the losses consequent on in temperature Mg-bound holes that dominate this behavior. activation is attributed to should increase The researchers obtained similar loss results for struc- the p-type layer. This was the number of free tures grown on semipolar gallium nitride substrates. confirmed in experiments holes significantly, In the c-plane case, only transverse electric (TE) modes where annealing was of the waveguide were considered to be important. In carried out on structures the researchers the semipolar case, modes with different electric field without Mg doping, where come to the directions occur in waveguides. However, the losses no increase in the optical conclusion that within these modes fell within 2/cm of each other (with loss coefficient was they do not the TE mode propagating in the [0001] direction being observed. highest), close to the measurement error. Although Mg doping is the contribute The work underlines the well-known fact that Mg doping most commercial technique significantly to the to obtain p-type conductivity in GaN is one of the for producing p-type layers waveguide loss. weakest points of the nitride semiconductor application in nitride semiconductor Rather, it is the equation. Finding a method to lower ionization energies structures, it leaves much for holes to be released from nitride acceptors would Mg-bound holes to be desired. In particular, reduce optical losses, among many other benefits. ■ the activation energy for that dominate this http://apex.jsap.jp/link?APEX/3/122104 holes to be released from behavior Author: Mike Cooke www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 92 Technology focus: Nitride microelectronics Ohio boosts nitride tunneling current to 118A/cm2 at –1V

‘Highest current density reported for III-nitride tunnel diodes’ open opportunities for low resistance contacts between devices.

esearchers at Ohio State University have Rachieved ‘the highest current density reported for III-nitride tunnel diodes [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol97, p203502, 2010]. The work employed the narrower- bandgap material indium gallium nitride (InGaN) for the tunneling barrier rather than the usual wider-bandgap aluminum gallium nitride (AlGaN). At –1V, the current density of the new device was 118A/cm2. The maxi- mum current density was 9.2kA/cm2 (limited by the capability of the measuring equipment). Tunnel junctions can be used to create low-resistance connections between devices Figure 1. Left: schematic and equilibrium energy band diagram of such as LEDs, laser diodes, GaN/InGaN/GaN (In 33%) zero-bias interband tunnel junction. multi-junction solar cells, and Right: band diagram at reverse bias, showing interband tunneling. tunnel field-effect transistors (TFETs). The Ohio team designed its tunnel junction structure In wide-bandgap nitride light-emitting devices, there (Figure 1) by using simulations and semi-classical are problems in creating low-resistance p-contacts (Wentzel–Kramers–Brillouin = WKB) theory to especially, and here tunnel junctions could be useful in understand how to use polarization electric fields allowing n-type material to contact with the hole injec- (spontaneous and piezoelectric/strain-dependent) and tion layer. band-bending effects to increase the tunneling proba- For example, Korean researchers from Lumimicro Co Ltd, bility and hence the current. These studies suggested Kyungpook National University, Korea Photonics Tech- that there was a critical thickness for the barrier. Below nology Institute, and Pukyong National University this, the conduction band on one side is not aligned recently used an LED epiwafer from Epivalley with a suitably with the valence band on the other. Above the three-period InGaN (In 17%) tunnel junction structure critical value, the tunneling probability is reduced by to give an n-type zinc oxide transparent conducting layer the thickness of the barrier. a suitable contact with the underlying p-GaN layer The critical thickness is reduced (and hence the (www.semiconductor-today.com/news_items/2010/ expected current increased) as the In molar fraction SEPT/LUMIMICRO_270910.htm). Unfortunately, the of the InGaN barrier is increased. However, it can be external quantum efficiency was quite low (~23%) difficult to create high-quality InGaN with high In compared with leading commercial devices (~60%). concentrations.

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Figure 2. Left: log J–V characteristics of GaN/InGaN/GaN TJ (solid line) and standard p+/n+ junction (dotted). Right: same characteristics plotted using linear J-axis.

InGaN tunnel junctions were grown on an N-polar At 1V reverse bias, the current density is 118A/cm2 free-standing GaN substrate, using plasma-assisted (the p–n current was five orders of magnitude lower). molecular beam epitaxy (PAMBE). The growth system At higher reverse bias values the differential resistance used was Veeco’s Gen 930 tool. Lumilog supplied the increases significantly. The researchers suggest that LED-quality GaN template. The researchers used N- increased series and contact resistance, along with polar material because higher indium concentrations self-heating effects, may be to blame, although have been achieved with such material. ‘further analysis is needed to understand the origin of The n-type GaN layer was grown first with a heavy this behavior. (n+) silicon-doping donor density of 5x1018/cm3 and Despite this, the researchers measured a maximum 100nm thickness. This was followed by the InGaN current density of 9.2kA/cm2 (limited by the capability layer, which was measured using x-ray diffraction to be of the measuring equipment). This value is claimed to 6.4nm thick with a 33.5% indium composition. The be ‘the highest current density reported for III-nitride final p-type GaN layer was also 100nm and had a tunnel diodes’. heavy (p+) magnesium acceptor density of 1x1019/cm3. The researchers plan to improve the structure with Reference p–n junctions, without the InGaN tunnel higher indium compositions and optimized barrier layer, were also grown. The metals used for the thicknesses. The team is also looking into ‘further p-contact were nickel-gold, and for the n-contact, sophistication with graded GaN/InGaN interfaces, titanium-gold. asymmetric junctions, and quaternary alloys, with a The tunnel junction (TJ) had higher current flow in both view to lower resistance and higher tunneling current. directions compared with the p-n junction (Figure 2). Improved understanding of the theory and modeling The reverse current of the tunnel junction was several will also be pursued. orders of magnitude higher than that of the p–n It is also suggested that other material systems reference. might benefit from using narrower-bandgap tunneling The p–n junction shows the standard behavior, where materials such as AlGaN, AlN and ZnO. the reverse bias current is lower than that under for- The researchers conclude: ‘The tunnel junction ward bias. The tunnel junction, by contrast (but as designs demonstrated here will enable the incorpora- expected for such ‘backward-diode’ devices), has a tion of tunnel junctions in several technologically higher current under reverse-bias compared with the relevant III-nitride devices such as LEDs, lasers, and forward condition. solar cells, and provide a pathway to device structures The tunnel junction device has a steep turn-on region such as tunnel FETs.’ of 70–130mV/decade close to zero-bias for tunneling. Some of the funding for the research came from the The researchers comment: “Such a low turn-on voltage US Office of Naval Research (ONR). ■ would be an ideal candidate to connect devices in series, http://link.aip.org/link/APPLAB/v97/i20/p203502/s1 especially in the case of multiple active-region emitters”. Author: Mike Cooke www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 94 Technology focus: Nitride HEMTs SiN raises nitride HEMT breakdown voltage without current collapse Bilayer approach uses combinations of different SiN films as passivation.

he University of Sheffield and the UK defense Tresearch company QinetiQ have developed techniques for using silicon nitride passivation to increase breakdown voltages without current collapse in nitride semiconductor high-electron- mobility transistors (HEMTs) [K B Lee et al, Semicond. Sci. Technol., vol25, p125010, 2010]. HEMTs using gallium nitride (GaN) with an aluminum gallium nitride (AlGaN) barrier layer grown on silicon carbide substrates have achieved a record 41W/mm power density at 4GHz. However, at high fre- quencies the current that can pass through such devices collapses, impacting device per- formance. These devices have also been developed for high- power operation, where a high Figure 1. Three-terminal breakdown measurements for HEMT devices

breakdown voltage is desired. passivated with various SixNy films at pinch off (Vgs = –7 V). Thickness ratio Different types of silicon nitride for std-SiN-LT-SiN bilayer passivated device is 1:3. Total thickness of

(SixNy) films have been used passivation film is 200nm. both to mitigate ‘current col- lapse’ and to increase breakdown voltages. However, test structures were also made to allow the the effects of the different films work against each researchers to separate out the impacts of surface and other. The Sheffield–Qinetiq research was directed at bulk leakage currents on performance. finding ways to combine the different films to produce The HEMT mesas were formed using inductively cou- high breakdown voltages without current collapse. pled plasma etching. The ohmic source/drain contacts The Sheffield–Qinetiq HEMT device structures consisted of titanium-aluminum-titanium-gold layers.

consisted of Al0.22Ga0.78N/GaN/sapphire substrate The Schottky gate metal structure was nickel-gold. (2-inch diameter), grown using metal-organic chemical The silicon nitride bilayer passivation consisted of

vapor deposition (MOCVD). The carrier density of the stoichiometric Si3N4 (std-SiN) followed by low-temper- two-dimensional electron gas (2DEG) that forms at the ature SixNy (LT-SiN). The passivation was deposited in AlGaN/GaN interface was 6.5x1012cm2, with a mobility a plasma-enhanced chemical vapor deposition of 1200cm2/V-s. (PECVD) system at 300°C and 30°C, respectively. This material was used to create HEMTs with 0.25m Various thicknesses for these layers were investigated gate length and 0.48m gate–drain separation. Some (including zero).

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The three-terminal breakdown measurements were carried out on at least 50 devices. In one test for breakdown (Figure 1), devices with 200nm SiN passivation were compared with unpassivated devices at a gate voltage (Vgs) of –7V. Three types of passivation were compared: std-SiN, LT-SiN, and a bilayer with std-SiN:LT-SiN of 1:3. Both the unpassivated and std-SiN devices showed break- down occurring around 120V source–drain voltage (Vds). The breakdown performance was more than doubled to 250V by using LT-SiN passivation. The bilayer device also showed improved breakdown performance, sustaining up to around 225V. Such improvement using LT-SiN has been seen before and has been attributed to the suppres- sion of conduction and the ioniza- tion of surface states on the AlGaN barrier layer. However, the Figure 2. Std-SiN:LT-SiN thickness ratios dependent breakdown voltage,

Sheffield/Qinetiq researchers are VB, of the bi-layer SixNy passivated HEMTs at pinch off, Vgs = –7V. The total skeptical of this interpretation on thickness of the SixNy film is 200 nm. Inset: bi-layer passivated devices the basis of surface-leakage and with charge trapped at the interface between LT-SiN and std-SiN. capacitance–voltage (CV) measurements on their test structures: “We propose for LT-SiN. The GLR was maintained at near 100% for that the increase of the breakdown voltage in the LT-SiN bilayers with std-SiN:LT-SiN ratios of 1:3 and 1:1. passivated structure is caused by the moderation of Various bilayer combinations were tested for break- the electric field at the drain edge of the gate”. The down (Figure 2). Clearly decreasing the std-SiN thick- moderation is likened to that achieved using field-plate ness is advantageous for high breakdown voltage. structures. With 20nm of std-SiN, the breakdown is at 238V. With In fact, the surface leakage current increases by a std-SiN layer of more than 150nm, the breakdown about one order of magnitude after LT-SiN passivation. settled to a value of ~120V — that of the single By contrast, std-SiN reduces surface leakage by about std-SiN layer device. The thickness of the LT-SiN is two orders of magnitude. The CV measurements found to be less critical — devices with std-SiN layers carried out at 10kHz and 1MHz indicate that the LT-SiN of 50nm but different LT-SiN layers of 150nm and passivation has a higher surface trap density compared 350nm had breakdowns at about 225V. This suggests with std-SiN. that the charge trapping that gives a field-plate-like The Sheffield/Qinetiq research suggests that the elec- effect occurs predominantly at and/or near the inter- tric field moderation comes about through tunneling of face between the two materials. carriers from the gate into the LT-SiN trap states at The point seems to be that the thinner the std-SiN, pinch-off. These trapped charges reduce the peak field, the nearer the trapped charge is to the semiconductor, increasing the breakdown voltage. allowing the charges to more effectively modify the Current collapse was gauged using pulsed measure- electric field and thus increase the breakdown voltage. ments with devices being kept below pinch-off and The Sheffield/Qinetiq work was funded by the Electro- then the gate voltage is pulsed for 400ns to full channel Magnetic Remote Sensing (EMRS) Defence Technology current. The headline figure in these measurements is Centre, established by the UK Ministry of Defence and the ‘gate lag response’ (GLR), the fraction of the managed by a consortium of companies — Selex, pulsed current of the normal DC value. In unpassivated Thales Defence, Roke Manor Research and Filtronic.■ devices, the GLR was 50%. With 200nm passivations, http://dx.doi.org/10.1088/0268-1242/25/12/125010 the GLR was near 100% for std-SiN but less than 40% Author: Mike Cooke www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 96 Technology focus: Nitride HEMTs AlGaN-channel with more than 50% Al achieves 1800V breakdown voltage

High-Al-content HEMT layers on AlN allow high-power applications.

esearchers at University of Fukui, Sharp Corp and RSumitomo Electric Industries Ltd have produced high-electron-mobility transistors (HEMTs) with aluminum gallium nitride (AlGaN) channels with Al content of more than 50% for the first time [Hirokuni Tokuda et al, Appl. Phys. Express, vol3, p121003, 2010]. The team is aiming to produce higher-power semiconductor devices. The new devices achieved a breakdown voltage of 1800V, which is the highest value reported so far among AlGaN-channel HEMTs, accord- ing to the researchers. HEMT devices using the conducting electron sheet (two-dimensional electron gas) formed at the interface between an AlGaN barrier and GaN channel have variously achieved power densities of 32.2W/mm in the Figure 1. Schematic cross-section of fabricated AlGaN-channel HEMT. C-band (4–8GHz) and maxi- mum oscillation frequencies of up to 300GHz. Such GaN. A wider bandgap is generally associated with performance characteristics are of great interest for both higher breakdown electric fields and an ability to microwave and millimeter-wave applications (commu- operate at higher temperature. However, high-Al-con- nications, radar, etc). tent AlGaN is difficult to grow with high quality on High-power applications for nitride semiconductor traditional substrates. devices have recently come to prominence, for example The researchers used free-standing single-crystal with companies developing inverter systems (DC-to-AC c-plane aluminum nitride (AlN) pieces as the substrate, conversion) for hybrid electric vehicles and for typically measuring 10mm x 10mm. The substrate renewable energy (solar, wind) plumbing into a smart material was chosen in order to allow better epitaxial electric power grid. These devices need to have growth quality for the high-Al-content AlGaN layers. high breakdown voltage and may need to operate at AlN has a smaller lattice mismatch with such high-Al- high temperature. content layers, compared with more traditional sub- HEMTs with AlGaN channels have been proposed as strate materials such as silicon carbide and sapphire. providing a way to achieve these properties. These MOCVD was used as the epitaxial growth technique devices have a wider bandgap of AlGaN compared with (Figure 1). None of the layers of the AlGaN-channel

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HEMT were intentionally doped. Since suitable ohmic contacts were not obtained using tradi- tional titanium/aluminum stacks, the researchers employed a recently developed system combining zirconium, aluminum, molybdenum and gold (Zr/Al/Mo/Au, 15/60/35/50nm). The stack was processed with a 950ºC anneal for 30secs. The Schottky gate contact consisted of nickel-gold. The gate length was 9m. The gate–source spacing was 3m. The widths of the devices were 515m. The gate–drain distance was varied between 5m and 15m, allowing the breakdown voltage variation with this parameter to be studied. A comparison device consisted of an Al0.25Ga0.75N/GaN (GaN-channel) HEMT produced on Figure 2. Temperature dependence of drain saturation current. Current is silicon. normalized at room temperature. Square and circle symbols are obtained An AlGaN-channel HEMT with from the developed AlGaN-channel and conventional GaN-channel HEMT, gate–drain distance of 10m had respectively. a maximum drain current of 13.0mA (25.2mA/mm) at a drain voltage of 50V. The The Fukui–Sharp–Sumitomo researchers also found drain saturation current (i.e. at zero gate voltage) was that the AlGaN-channel device maintained its saturation 4.7mA (9.1mA/mm). The maximum transconductance drain current performance more effectively at high was 2.4mS (4.7mS/mm). The threshold for pinch-off temperature than the GaN-channel comparison was –5.5V. (Figure 2). The current and transconductance were smaller than The fall in current over the range from room tempera- previous AlGaN-channel HEMTs (with lower Al contents) ture to 300°C for the AlGaN-channel device was 20%. reported in 2007–2008. This is attributed to a high The GaN-channel comparison device current fell 80% channel resistance. Room-temperature transmission line over the same range. model measurements gave an ohmic specific contact Given the long gate length, the researchers see this resistance of 4.8x10–2-cm2. The sheet resistance was as reflecting the temperature dependence of the found to be 2900/sq. C–V profiling was used to esti- channel electron mobilities of the respective devices. mate the electron concentration at the barrier/channel Further investigation would require studying devices interface, giving a value of about 5x1019/cm2. with different gate lengths at varying temperatures, Since the channel resistance is relatively high, the the researchers comment. researchers believe that this is caused by low mobility ‘The temperature-insensitive characteristic of of the AlGaN material. However, this cannot be AlGaN-channel HEMT is a great advantage for stable confirmed directly by Hall measurements since the high-temperature device operation in many practical sample size is too small. The researchers comment: applications,’ the researchers add. ‘Further work is needed to improve epitaxial layer The contact resistance also decreased as the temper- quality and structure, such as introducing a low-resistive ature increased to 300°C, falling to 1.5x10–2-cm2 for cap layer.’ the AlGaN-channel device. The GaN-channel device The breakdown voltage grew linearly with the also benefitted from this effect — the contact resist- gate–drain distance, reaching 1800V for 15m ance was 6x10–6-cm2 at room temperature and gate–drain devices. These experiments were carried 5.8x10–7-cm2 at 300°C. ■ out at gate voltage –20V, giving a fully pinched-off http://apex.jsap.jp/link?APEX/3/121003/ channel. The breakdown of 1800V compares with a The author Mike Cooke is a freelance technology value of 1650V achieved by Mitsubishi using an journalist who has worked in the semiconductor and

Al0.38Ga0.62N channel. advanced technology sectors since 1997. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 98 Conference report: IEDM Power, speed and other highlights at IEDM

Mike Cooke rounds up developments reported at December’s 2010 IEEE International Electron Devices Meeting (IEDM) in San Francisco.

he past few years have seen growing interest in using nitride semiconductors as components in Tpower systems. The wide bandgaps (> 3.4eV) of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) mean that the breakdown electric field is large compared with more traditional semiconductors such as silicon (Si) or gallium arsenide (GaAs). The wider bandgap also allows such devices to maintain their performance characteristics to higher temperatures. The 2010 International Electron Devices Meeting (IEDM) in early December had a special focus on power electronics, where gallium nitride technologies were to the fore. The themes of these presentations were energy efficiency and supply for green technolo- gies. Figure 1. Prospect of SiC/GaN application in future Session 13 was titled ‘Emerging Technologies — plug-in hybrid electric vehicles, according to Toyota Next Generation Power Devices and Technology’, while researchers. The lateral power switch devices may ‘Advanced Power Devices and Reliability’ from the need to be bidirectional (for AC/AC matrix conversion) perspective of quantum and compound semiconductor or high frequency (for buck). technology was also the topic of session 20. The earlier of these sessions was concerned mainly with sifting through potential applications and matching them to suitable potential technologies. Applications include battery control (e.g. switching and charging), motors (e.g. in hybrid electric vehicles, industrial processes etc), renewable energy distribution into the electric grid, etc. For many of these uses, silicon is the favored option due to its long development and low cost. However, some companies such as Toyota [session 13.5] and consultant Dr Michael A. Briere of ACOO Enterprises LLC [13.6] see potential for the application of GaN and silicon carbide (SiC) to automotive, and even voltage regulator modules for multi-processor CPU power Figure 2. Relative merits of vertical and lateral control. Some key features of these devices are higher structures for GaN transistors, according to Toyota power efficiencies and higher power densities. High researchers. temperature operation is also a useful factor and is of much interest for aerospace applications, as well as www.fueleconomy.gov/feg/best/bestworstNF.shtml). automotive and electric grid applications. The company sees improved economy being made Toyota is a leading producer of hybrid electric vehicles, available by the introduction of silicon carbide and/or known internationally for its Prius range, which the gallium nitride power devices in inverters, boost and US Environmental Protection Agency has determined is buck converters, and for AC/DC charger units (Figure 1). the most fuel-efficient gasoline car sold in the USA Vertical devices (Figure 2) are preferred for the higher- (achieving 51 miles per gallon in cities, according to power applications (inverter, boost converter), but are

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Conference report: IEDM 99 more costly to produce. Lateral devices can be manu- factured on silicon, reducing costs, but are restricted to mid-range powers that are acceptable for AC/DC chargers and buck converters. Session 20 reported actual structures and technologies for high-power/voltage operation, mainly in nitride semiconductors, but also with some silicon technology. Some of the nitride research is aimed at characterizing traps that can impact performance [Ohio State Univer- sity, Wright Patterson Air Force Base, Wyle Labs, 20.1], or looking for degradation mechanisms [MIT, 20.2; IMEC, University of Padova, 20.3; Hong Kong University of Science and Technology, Nitronex, 20.4] of nitride high-electron-mobility transistors (HEMTs). MIT found that RF stress created more degradation compared with a comparable DC voltage. IMEC and Padova applied for the first time the time-dependent dielectric breakdown (TDDB) technique that is used in CMOS reliability assessments to give lifetime extrapo- lations. HKUST et al reported the on-state reliability of HEMTs Figure 3. Schematic NCSU nitride semiconductor that were treated with fluorine plasma to shift the MOS-HFET. threshold voltage to ‘enhancement mode’, i.e. normally-off operation, which is desirable for lower was GaN and the barrier was AlGaN (26% Al). power consumption. A critical voltage was found that The enhancement-mode operation is achieved by seemed to be caused by impact ionization of the fluo- injecting charge into the floating gate (rather like in rine ions in the barrier layer. Flash memory devices), shifting the threshold voltage.

Also, new high-power device structures were presented In fact, a floating gate stack of SiO2(tunnel oxide)/TaN/ such as Panasonic’s new method to increase the block- HAH (blocking oxide), where HAH=HfO2/Al2O3/HfO2, ing voltage of GaN power switching transistors on silicon entered enhancement mode after a 15V pulse for 500ms. substrates to 2200V [20.5; see Semiconductor Today The charge retention of the floating gate was such that news at www.semiconductor-today.com/news_items/ less than 10% was lost after 10,000 seconds. Threshold 2010/DEC/PANASONIC_081210.htm]. The method voltage shifts of up to 6V were achieved, representing consists of putting selectively formed p-type regions a charge density in the floating gate of 1.2x1013/cm2. on the surface of the Si substrate to block electron One would normally expect a nitride HFET/HEMT to current flows that occur at the interface between the be depletion mode (normally-on) and that adding GaN and Si layers of the device. This allows the Si to insulation to reduce gate leakage (MOS-HFET) would also contribute to the blocking voltage. The 2200V shift the threshold in a negative direction, making the blocking voltage is about five times that achieved by device harder to turn off and putting it further from usual GaN power transistors grown on silicon substrates. enhancement behavior. The researchers believe that increasing the thickness Although a floating gate structure had been suggested of the epitaxial nitride semiconductor structures could previously as a way to shift thresholds to enhancement increase blocking to 3000V. mode in nitride HEMTs, this had not been experimentally Panasonic says that the new GaN transistor extends demonstrated before. A combination of atomic layer the operating voltages of a variety of power switching deposition and RF magnetron sputtering (floating gate) systems including inverters for industrial use and was used to create the stack. uninterruptible power supplies. The company has filed applications for 99 domestic and 64 overseas patents Compounding digital performance on the technology. Digital devices built in compound semiconductor material In the same section, North Carolina State University continue to be of interest, particularly as a possible and Nitronex presented a normally-off nitride semicon- means of overcoming the increasing problems of ductor transistor that included a silicon dioxide (SiO2) developing traditional complementary metal oxide gate tunnel dielectric and tantalum nitride (TaN) floating semiconductor (CMOS) silicon technology that controls gate layers [20.6]. The structure (Figure 3) is described most consumer electronics today. as being a metal-oxide-semiconductor-heterostructure The main material here is indium gallium arsenide field-effect transistor (MOS-HFET). The channel layer (InGaAs). For example, Intel and epitaxial wafer www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 100 Conference report: IEDM

produced ultra-thin InGaAs-on-insulator MOSFETs using direct wafer bonding techniques (i.e. the layers are grown on another substrate and transferred to a silicon wafer for further processing such as wiring, etc.). The insulator consisted of a buried aluminum oxide layer. The thickness of the InGaAs channel was 3.5nm and that of the oxide was 9nm. Using a double gate, the on/off current ratio was 107. The US-based SEMATECH industry consortium produced self-aligned III-V MOSFETs on 200mm silicon wafers using standard silicon industry tools for the first time [6.2]. The gate length was 0.5m (500nm, rather than the tens of nanometers used by present-day CMOS). The maximum external transconduc-   tance (gm,ext) was 1005 S/ m and the on-current was 1A/m at 1V operating Figure 4. Module targets for III-V at 11nm and below. SEMATECH’s voltage. The researchers comment: process meets the targets for contact (1-cm2) and junction ‘We present statistically significant data (100/sq) resistance, and for junction depth (10nm). However, demonstrating that III-V on Si devices

work is needed on interface trap density (Dit), nFET hetero buffer can be processed on a Si line with con-  2  mobility ( n, 8900cm /V-s) and buffer thickness (1.4 m). trolled contamination, uniformity and yield while demonstrating good device producer IQE last year developed an InGaAs FinFET performance.’ The team is targeting the introduction (i.e. a long thin channel with a wrap-around gate). The of III-V devices with critical features around 11nm advantage of InGaAs is a higher mobility than silicon. (Figure 4). Intel/IQE research in 2010 has improved the device III-V MOSFETs tend to be n-MOS. For CMOS circuitry, structure with a fin that was 35nm wide and reduced one also needs p-MOS. Generally, it is expected that the gate–source and gate–drain distances to 5nm. The these devices will be provided by germanium channels. researchers claim ‘more enhancement-mode threshold However, Stanford University, Stanford Linear Acceler- voltage and significantly improved electrostatics’ from ator Center, and the Naval Research Lab reported on their new device. indium gallium antimonide (InGaSb) devices that had Meanwhile [3.1], the University of Tokyo, working 100% (910cm2/V-s) improved buried mobility for holes, with Japan’s National Institute of Advanced Industrial compared with germanium, over the entire sheet charge Science and Technology (NAIST) and Sumitomo Chemical, range [6.4]. The surface mobility was 50% better (620cm2/V-s). The researchers produced transistors with on–off current ratios of 104 with a subthreshold slope (SS) of 120mV/dec. The SS is desired to be as close as possible to the 60mV/dec limit at room tempera- ture (log(10)kT/q) for a sharp turn-on. Various devices were produced to optimize hole transport, using aluminum oxide Figure 5. Different channel designs to separate the impact of different issues and gate insulation in enhance transistor performance. Top surface is terminated with two monolayers of a self-aligned gate-first

GaSb in each case to maintain high-quality interface with Al2O3. WB = wide bandgap. process (Figure 5).

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Support for the research came from Office of Naval Research and Intel. Quantum well devices are also being developed to incorporate III-Vs into silicon. On the n-side, Pennsylvania State University, Naval Research Lab, and Israel Institute of Technol- ogy University have worked with InAs0.8Sb0.2 wells to produce a drive current of 380A/m at 0.5V [6.3]. A high-k gate stack consisted of 3.3nm of aluminum oxide and 1nm GaSb, giving an equivalent oxide thickness of 4.2nm. Intel has worked on p-type QWFETs with a strained germanium chan- Figure 6. Cross-section of MIT device structure. nel and an EOT (equivalent oxide thickness) of 1.5nm [6.7]. The hole mobility (Figure 6) with a cut-off (fT) of 580GHz and maximum 2 12 2 (770cm /V-s at sheet carrier density of 5x10 /cm ) oscillation (fmax) of 675GHz [30.7]. This was achieved was found to be four times that of standard strained using a molybdenum-based self-aligned gate process silicon. The researchers comment: ‘This suggests the (Figure 7) that ‘yields outstanding contact resistance, Ge QWFET is a viable p-channel option for III-V CMOS.’ Speedsters More traditional III-V transistors were also presented, targeting and achieving frequency characteristics up to 1 terahertz (1000GHz = 1THz). Such devices are of interest for millimeter and sub-millimeter radio wave transmissions used for defense and communications, e.g. for signal generation/detection and high-power amplification (GaN or SiC) at high frequency. The highest characteristic of 1THz was for the maxi- mum oscillation frequency of a 50nm gate-length enhancement-mode In0.7Ga0.3As pseudomorphic HEMT on 100mm InP substrate, produced by Teledyne Scientific (with Jesús del Alamo of MIT) [30.6]. According to the researchers, this is the first demonstration of such a performance for enhancement-mode PHEMTs. To establish this result the researchers had to understand some abnormal peaky behavior that could have led to over-estimation of fmax. A platinum gate-sinking process was used to reduce the effective gate–channel distance and to shift the threshold to positive values for enhancement-mode (normally-off) behavior. The transconductance was 1.7S/mm at 0.75V 1THz input. The subthreshold region was ‘very sharp’, with a swing of 80mV/dec Figure 7. Process flow for self-aligned gate (SAG) and drain-induced barrier lowering of 80mV/V. The structure: (a) double electron-beam exposure/ 1mA/mm current turn-on voltage was more than 0.5V. development of photoresist; (b) silicon dioxide etch; In a related presentation, MIT separately reported on (c) molybdenum lateral etch; (d) two-step citric acid its work with 60nm self-aligned-gate InGaAs HEMTs solution/argon plasma etches to expose barrier. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 102Conference report: IEDM

source resistance, transconductance and high-frequency 300GHz/500GHz, a breakdown voltage of 1.6V, and characteristics’. Many of the measured values were 2psec minimum CML ring oscillator gate delay [30.5]. records, or near the record value. The researchers attribute these improved results over The purpose of using non-alloyed molybdenum is to previous SiGe HBTs to ‘reduced specific collector–base create ohmic source–drain contacts with low parasitic capacitance and base resistance and scaling of device resistance and capacitance, allowing high-frequency dimensions’. operation. One important feature of reducing the para- sitic characteristics is to shrink the footprint of InGaAs Light handlers devices from the typical micron-scale needed for con- Another area where III-Vs tend to dominate is light- tacts and ~100nm separation distance from the gate. emitting devices. At IEDM, Dartmouth College and MIT The transconductance was 2.1mS/m at a source–drain reported lasers created through band engineering voltage of 0.5V. The work was part sponsored by Intel. germanium on silicon (both group IV elements). These For GaN HEMT performance, a speed record beyond group IV materials normally have indirect bandgaps 400GHz has been achieved by HRL Laboratories with that make light emission difficult. By compensating the NASA’s Jet Propulsion Laboratory [30.1]. A double hetero- energy difference between the direct and indirect structure with barriers above and below the GaN well bandgaps, Dartmouth–MIT created laser emission at (AlN/GaN/AlGaN) was used. The gate length was 40nm. 1590–1610nm wavelengths using optical pumping (i.e. The cut-off frequency was 220GHz and the maximum energy is delivered into the device through an external oscillation was 440GHz. Silicon carbide substrates were light source). However, the researchers also report used. To improve the ohmic contact with the source direct-gap electroluminescence from Ge/Si heterojunction and drain regions of the device, a re-growth process diodes, indicating that electrical pumping is at least involving molecular beam epitaxy (MBE) was used. possible. The wavelength range was 1450–1650nm at Further nitride semiconductor HEMT developments room temperature. In combination with traditional were reported by MIT Microsystems Technology CMOS, the light emitters could be a ‘desirable choice Laboratories [30.2], and by University of Notre Dame, for monolithic electronic–photonic integrated circuits’. TriQuint Semiconductor, and IQE RF LLC [30.4]. The In the light-detection arena, European researcher MIT group has developed a gate recess/oxygen plasma center IMEC, France’s CRHEA-CNRS,and the Royal treatment to reduce collapse effects in terms of Observatory of Belgium presented an AlGaN-on-silicon

transconductance, enabling an fT of 225GHz. Notre imager to detect extreme ultraviolet radiation (EUV) Dame et al produced 144nm gate enhancement-mode [14.5]. The detectors have a wavelength cut-off of and depletion-mode devices on the same wafer, pro- 280nm from using AlGaN with 40% Al, giving a 4.2eV ducing ring oscillators with a 15.3psec/stage delay. bandgap; the device is thus intrinsically blind to GaN nanowires transistors also made a showing, with wavelengths longer than this. An array of such detec- National Taiwan University presenting a depletion-mode tors was formed into a 256x256-pixel focal plane array device that operated at 100GHz [30.3]. The channel with a 10m pixel-to-pixel pitch. The device also consisted of the two-dimensional electron gas formed contains 0.35m CMOS read-out circuitry to which the

at the interface with a gallium oxide (Ga2O3) nanowire AlGaN on Si detectors are flip-chip bonded. The nitride region. material was deposited using MBE. AlGaN/GaN MOS-HEMTs have also been produced for The structure of the device is such that the illumination the first time in research in Singapore [11.3], by the came through the ‘back-side’ – i.e. through the locally University of Singapore (NUS), the Institute of Materials thinned silicon wafer. The sensitivity of the device Research and Engineering, and the Data Storage Insti- down to a wavelength of 1nm was verified using tute. The device used a diamond-like carbon (DLC) liner synchrotron radiation. with high compressive stress to enhance the perform- Ultraviolet detection is of particular interest for solar ance, increasing saturation currents by up to 30% at science, EUV microscopy and advanced EUV lithography 10V (gate at 2V). Peak transconductance was increased tools. In fact, the devices were produced within the by 22% at 5V by using the DLC liner. The gate lengths framework of the BOLD project of the European Space of the devices were less than 500nm. The researchers Agency [http://bold.sidc.be/-BOLD-GSTP-AlGaN-.htm]. believe that the shift of the threshold by 1V in the posi- The ultimate aim is to produce 1000x1000-pixel arrays tive direction suggests the potential of strain engineering for use on future solar missions. for achieving enhancement-mode operation. The use of the wide-bandgap nitride semiconductor High-speed electronics was not exclusively the pre- AlGaN makes the devices more rugged in terms of UV serve of III-V devices at IEDM. IHP — Innovations for damage compared with devices using silicon. Also, High Performance Microelectronics (Leibniz-Institut für such devices do not need filters to block the visible and innovative Mikroelectronik) presented a silicon germanium infrared radiation that is needed for ‘solar blindness’. ■

heterojunction bipolar transistor with fT/fmax of www.his.com/~iedm/program/program.html

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Learn more at: Learn more Membership/Standards/Public Policy Membership/Standards/Public SEMI supportsJoin SEMI and help us illuminate the world of LEDs. and market statistics EHS, Policy, Public LED programs in Standards, Events ILLUMINATION at these upcoming SEMI expositions: chain across the LED supply 104 suppliers’ directory Index 1 Bulk crystal source materials p104 14 Chip test equipment p108 2 Bulk crystal growth equipment p104 15 Assembly/packaging materials p108 3 Substrates p104 16 Assembly/packaging equipment p108 4 Epiwafer foundry p105 17 Assembly/packaging foundry p108 5 Deposition materials p105 18 Chip foundry p108 6 Deposition equipment p106 19 Facility equipment p108 7 Wafer processing materials p106 20 Facility consumables p109 8 Wafer processing equipment p107 21 Computer hardware & software p109 9 Materials and metals p107 22 Used equipment p109 10 Gas & liquid handling equipment p107 23 Services p109 11 Process monitoring and control p107 24 Consulting p109 12 Inspection equipment p108 25 Resources p109 13 Characterization equipment p108 To have your company listed in this directory, e-mail details (including categories) to [email protected] Note: advertisers receive a free listing. For all other companies, a charge is applicable. Crystal IS Inc 1 Bulk crystal source 2 Bulk crystal growth 70 Cohoes Avenue materials equipment Green Island, NY 12183, USA Tel: +1 518 271 7375 Mining & Chemical Products Ltd MR Semicon Inc Fax: +1 518 271 7394 1-4, Nielson Road, PO Box 91687, www.crystal-is.com Finedon Road Industrial Estate, Albuquerque, Wellingborough, NM 87199-1687, The Fox Group Inc Northants NN8 4PE, USA 200 Voyageur Drive, UK Tel: +1 505 899 8183 Montreal, Quebec H9R 6A8, Tel: +44 1933 220626 Fax: +1 505 899 8172 Canada Fax: +44 1933 227814 www.mrsemicon.com Tel: +1 925 980 5645 www.MCP-group.com Fax: +1 514 630 0227 www.thefoxgroupinc.com Umicore Indium Products 3 Substrates 50 Simms Avenue, Epistone Comp-Semi Materials AXT Inc Providence, RI 02902, Inc 4281 Technology Drive, USA 2371 Marion Ave., Fremont, Fremont, Tel: +1 401 456 0800 CA 94539, USA CA 94538, Fax: +1 401 421 2419 Tel: +86 755 28968489 USA www.thinfilmproducts.umicore.com Fax:+86 755 89724120 Tel: +1 510 438 4700 www.epistone.com Fax: +1 510 683 5901 United Mineral & Chemical Corp www.axt.com 1100 Valley Brook Avenue, Freiberger Compound Materials Lyndhurst, Supplies GaAs, InP, and Ge wafers Am Junger Loewe Schacht 5, NJ 07071, using VGF technology with Freiberg, 09599, USA manufacturing facilities in Beijing Germany Tel: +1 201 507 3300 and five joint ventures in China Tel: +49 3731 280 0 Fax: +1 201 507 1506 producing raw materials, including Fax: +49 3731 280 106

www.umccorp.com Ga, As, Ge, pBN, B2O3. www.fcm-germany.com

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Kyma Technologies Inc Umicore Electro-Optic Materials IQE is a leading global supplier of 8829 Midway West Road, Watertorenstraat 33, advanced epiwafers, with products Raleigh, NC, B-2250 Olen, covering a diverse range of USA Belgium applications within the wireless, Tel: +1 919 789 8880 Tel: +32-14 24 53 67 optoelectronic, photovoltaic and Fax: +1 919 789 8881 Fax: +32-14 24 58 00 electronic markets. www.kymatech.com www.substrates.umicore.com OMMIC Nikko Materials Wafer Technology Ltd 2, Chemin du Moulin B.P. 11, 125 North Price Road, 34 Maryland Road, Tongwell, Limeil-Brevannes, 94453, Chandler, AZ, Milton Keynes, Bucks, MK15 8HJ, France USA UK Tel: +33 1 45 10 67 31 Tel: +1 480 732 9857 Tel: +44 (0)1908 210444 Fax: +33 1 45 10 69 53 Fax: +1 480 899 0779 Fax: +44 (0)1908 210443 www.ommic.fr www.nikkomaterials.com www.wafertech.co.uk Wafer Technology Ltd Picogiga International S.A.S. SiCrystal AG is a UK-based producer Place Marcel Rebuffat, Parc de Guenther-Scharowsky-Str. 1 of III-V materials and Villejust, 91971 Courtabouef, D-91058 Erlangen, epitaxy-ready substrates offering France Germany the widest product Tel: +33 (0)1 69 31 61 30 Tel: +49 (0) 9131 / 73 33 97 range in the business. Fax: +33 (0)1 69 31 61 79 Fax: +49 (0) 9131 / 73 22 37 www.picogiga.com www.sicrystal.de 4 Epiwafer foundry SemiSouth Laboratories Inc sp3 Diamond Technologies Spire Semiconductor LLC 201 Research Boulevard, 2220 Martin Avenue, 25 Sagamore Park Drive, Starkville, MS 39759, Santa Clara, CA 95050, Hudson, NH 03051, USA USA USA Tel: +1 662 324 7607 Tel: +1 877 773 9940 Tel: +1 603 595 8900 Fax: +1 662 324 7997 Fax: +1 408 492 0633 Fax: +1 603 595 0975 www.semisouth.com www.sp3inc.com www.spirecorp.com 5 Deposition Sumitomo Electric Cambridge Chemical Company Ltd Semiconductor Materials Inc Unit 5 Chesterton Mills, materials 7230 NW Evergreen Parkway, French’s Road, Cambridge CB4 3NP, Hillsboro, OR 97124, USA UK Akzo Nobel High Purity Tel: +1 503 693 3100 x207 Tel: +44 (0)1223 352244 Metalorganics Fax: +1 503 693 8275 Fax: +44 (0)1223 352444 525 West Van Buren Street, www.sesmi.com www.camchem.co.uk Chicago, IL 60607, USA Tel: +1 312 544 7371 TECDIA Inc The Fox Group Inc Fax: +1 312 544 7188 (see section 16 for full contact details) (see section 3 for full contact details) www.akzonobel-hpmo.com

III/V-Reclaim Intelligent Epitaxy Technology Inc Cambridge Chemical Company Ltd Wald 10, 1250 E Collins Blvd, Richardson, Unit 5 Chesterton Mills, 84568 Pleiskirchen, TX 75081-2401, USA French’s Road, Cambridge CB4 3NP, Germany Tel: +1 972 234 0068 UK Tel: +49 8728 911 093 Fax: +1 972 234 0069 Tel: +44 (0)1223 352244 Fax: +49 8728 911 156 www.intelliepi.com Fax: +44 (0)1223 352444 www.35reclaim.de www.camchem.co.uk III/V-Reclaim offers reclaim IQE (recycling) of GaAs and InP wafers, Cypress Drive, Dow Electronic Materials removing all kinds of layers and St Mellons, Cardiff 60 Willow Street, structures from customers’ wafers. CF3 0EG, North Andover, MA 01845, All formats and sizes can be UK USA handled. The firm offers single-side Tel: +44 29 2083 9400 Tel: +1 978 557 1700 and double-side-polishing and Fax: +44 29 2083 9401 Fax: +1 978 557 1701 ready-to-use surface treatment. www.iqep.com www.metalorganics.com www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 106Suppliers’ Directory

Matheson Tri-Gas electronic and optoelectronic Temescal, the expert in metallization 6775 Central Avenue applications based on compound, systems for the processing of Newark, CA 94560, silicon, or organic semiconductors. compound semiconductor-based USA Several system configurations of substrates, provides the finest Tel: +1 510 793 2559 AIXTRON, Epigress, Genus or evaporation systems available. Fax: +1 510 790 6241 Thomas Swan are available. Multi-layer coatings of materials www.mathesontrigas.com such as Ti, Pt, Au, Pd, Ag, NiCr, Al,

Oxford Instruments Cr, Cu, Mo, Nb, SiO2, with high Mining & Chemical Products Ltd Plasma Technology uniformity are guaranteed. Today the (see section 1 for full contact details) North End, Yatton, world’s most sophisticated handsets, Bristol, Avon BS49 4AP, optical, wireless and telecom Power + Energy Inc UK systems rely on millions of devices (see section 8 for full contact details) Tel: +44 1934 837 000 that are made using Temescal Fax: +44 1934 837 001 deposition systems and components. Praxair Electronics www.oxford-instruments.co.uk 542 Route 303, We provide Veeco Instruments Inc Orangeburg, NY 10962, flexible tools 100 Sunnyside Blvd., USA and processes Woodbury, NY 11797, USA Tel: +1 845 398 8242 for precise materials deposition, Tel: +1 516 677 0200 Fax: +1 845 398 8304 etching and controlled nanostructure Fax: +1 516 714 1231 www.praxair.com/electronics growth. Core technologies include www.veeco.com plasma and ion-beam deposition SAFC Hitech and etch and ALD. Power Road, Bromborough, Veeco is a world-leading supplier of Wirral, Merseyside CH62 3QF, Riber compound semiconductor equipment, UK 31 rue Casimir Périer, BP 70083, and the only company offering both Tel: +44 151 334 2774 95873 Bezons Cedex, MOCVD and MBE solutions. With Fax: +44 151 334 6422 France complementary AFM technology and www.safchitech.com Tel: +33 (0) 1 39 96 65 00 the industry’s most advanced Process Fax: +33 (0) 1 39 47 45 62 Integration Center, Veeco tools help Williams Advanced Materials www.riber.com grow and measure nanoscale devices 2978 Main Street, Riber is a in worldwide LED/wireless, data Buffalo, NY 14214, leading storage, semiconductor and scientific USA supplier of research markets—offering important Tel: +1 716 837 1000 MBE products and related services choices, delivering ideal solutions. Fax: +1 716 833 2926 for the compound semiconductor www.williams-adv.com industry. 7 Wafer processing 6 Deposition SVT Associates Inc materials equipment 7620 Executive Drive, Eden Prairie, Air Products and Chemicals Inc 7201 Hamilton Blvd., AIXTRON AG MN 55344, USA Allentown, PA 18195, USA Kaiserstrasse 98, Tel: +1 610 481 4911 52134 Herzogenrath, Tel: +1 952 934 2100 www.airproducts.com/compound Germany Fax: +1 952 934 2737 www.svta.com Tel: +49 241 89 09 0 MicroChem Corp Fax: +49 241 89 09 40 1254 Chestnut St. Newton, Temescal, www.aixtron.com MA 02464, USA a part of Tel: +1 617 965 5511 Ferrotec Fax: +1 617 965 5818 4569-C Las E-mail: [email protected] Positas Rd, AIXTRON is a leading provider of www.microchem.com deposition equipment to the Livermore, semiconductor industry. AIXTRON’s CA 94551, Power + Energy Inc technology solutions (MOCVD, ALD, USA (see section 8 for full contact details) AVD®, CVD, OVPD) are used by a Tel: +1 925 245 5817 diverse range of customers worldwide Fax: +1 925 449-4096 Praxair Electronics to build advanced components for www.temescal.net (see section 5 for full contact details)

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Tegal Corp SAES Pure Gas Inc 8 Wafer processing 2201 S McDowell Boulevard, 4175 Santa Fe Road, equipment Petaluma, CA 94954, USA San Luis Obispo, Tel: +1 707 763 5600 CA 93401, EV Group www.tegal.com USA DI Erich Thallner Strasse 1, Tel: +1 805 541 9299 St. Florian/Inn, 4782, Veeco Instruments Inc Fax: +1 805 541 9399 Austria (see section 6 for full contact details) www.saesgetters.com Tel: +43 7712 5311 0 Fax: +43 7712 5311 4600 9 Materials & metals 11 Process monitoring www.EVGroup.com Technology and Goodfellow Cambridge Ltd and control market leader for Ermine Business Park, k-Space Associates Inc wafer processing Huntingdon, 3626 W. Liberty Rd., equipment. Cambridgeshire PE29 6WR, UK Ann Arbor, Worldwide industry standards for Tel: +44 (0) 1480 424800 MI 48103, aligned wafer bonding, resist Fax: +44 (0) 1480 424900 USA processing for the MEMS, nano and www.goodfellow.com semiconductor industry. Tel: +1 734 668 4644 Fax: +1 734 668 4663 www.k-space.com Logitech Ltd Goodfellow supplies small Erskine Ferry k-Space Associates Inc specializes in quantities of metals and materials Road, in-situ, real-time thin-film process for research, development, Old Kilpatrick, near Glasgow G60 5EU, monitoring tools for MBE, MOCVD, Scotland, UK prototyping and specialised PVD, and thermal evaporation. Tel: +44 (0) 1389 875 444 manufacturing operations. Applications and materials include Fax: +44 (0) 1389 879 042 the research and production line www.logitech.uk.com TECDIA Inc monitoring of compound Logitech Ltd is a leading designer (see section 16 for full contact details) semiconductor-based electronic, and manufacturer of high-precision optoelectronic, and photovoltaic cutting, lapping, polishing and CMP devices. equipment enabling high-specification 10 Gas and liquid surface finishes to be prepared with handling equipment KLA-Tencor precise geometric accuracy. One Technology Dr, Air Products and Chemicals Inc 1-2221I, Milpitas, Oxford Instruments (see section 7 for full contact details) CA 95035, Plasma Technology USA (see section 6 for full contact details) Cambridge Fluid Systems Tel: +1 408 875 3000 12 Trafalgar Way, Bar Hill, Fax: +1 408 875 4144 Power + Energy Inc Cambridge CB3 8SQ, www.kla-tencor.com (see section 8 for full contact details) UK Tel: +44 (0)1954 786800 LayTec GmbH SAMCO International Inc Fax: +44 (0)1954 786818 Seesener Str. 532 Weddell Drive, Sunnyvale, CA, www.cambridge-fluid.com 10–13, USA 10709 Berlin, Tel: +1 408 734 0459 CS CLEAN SYSTEMS AG Germany Fax: +1 408 734 0961 Fraunhoferstrasse 4, Tel: +49 30 39 800 80 0 www.samcointl.com Ismaning, 85737, Fax: +49 30 3180 8237 Germany www.laytec.de SPP Process Technology Tel: +49 89 96 24 00 0 LayTec develops and manufactures Systems Ltd Fax: +49 89 96 24 00 122 optical in-situ and in-line metrology Imperial Park, Newport NP10 8UJ, www.cscleansystems.com systems for thin-film processes Wales, UK with particular focus on compound Tel: +44 (0)1633 652400 Power + Energy Inc semiconductor and photovoltaic Fax: +44 (0)1633 652405 106 Railroad Drive, applications. Its know-how is based www.spp-pts.com Ivyland,PA 18974, USA on optical techniques: reflectometry, Tel: +1 215 942-4600 emissivity corrected pyrometry, TECDIA Inc Fax: +1 215 942-9300 curvature measurements and (see section 16 for full contact details) www.powerandenergy.com reflectance anisotropy spectroscopy. www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 108Suppliers’ Directory

Optical Reference Systems Ltd SUSS MicroTec Test Systems Palomar Technologies Inc OpTIC Technium, 228 Suss Drive, 2728 Loker Avenue West, St Asaph Business Park, Waterbury Center, VT 05677, Carlsbad, CA 92010, USA St Asaph, LL17 0JD, USA Tel: +1 760 931 3600 UK Tel: +1 800 685 7877 Fax: +1 760 931 5191 Tel: +44 (0)1745 535 188 Fax: +1 802 244 7853 www.PalomarTechnologies.com Fax: +44 (0)1745 535 186 www.suss.com www.ors-ltd.com TECDIA Inc 2700 Augustine Drive, Suite 110, WEP (Ingenieurbüro Wolff 15 Assembly/packaging Santa Clara, CA 95054, USA für Elektronik- und materials Tel: +1 408 748 0100 Programmentwicklungen) Fax: +1 408 748 0111 Bregstrasse 90, D-78120 ePAK International Inc www.tecdia.com Furtwangen im Schwarzwald, 4926 Spicewood Springs Road, Tecdia is a Germany Austin, TX 78759, USA manufacturer of Tel: +49 7723 9197 0 Tel: +1 512 231 8083 single-layer chip capacitors, Fax: +49 7723 9197 22 Fax: +1 512 231 8183 chip resistors, DC boards, bias-Ts, www.wepcontrol.com www.epak.com diamond scribing tools and dispensing nozzles. Gel-Pak 12 Inspection equipment 31398 Huntwood Avenue, Hayward, CA 94544, USA 17 Assembly/packaging Bruker AXS GmbH Tel: +1 510 576 2220 foundry Oestliche Rheinbrueckenstrasse 49, Fax: +1 510 576 2282 Karlsruhe, 76187, www.gelpak.com Quik-Pak Germany 10987 Via Frontera, Tel: +49 (0)721 595 2888 Williams Advanced Materials San Diego, CA 92127, USA Fax: +49 (0)721 595 4587 2978 Main Street, Buffalo, NY 14214, Tel: +1 858 674 4676 www.bruker-axs.de USA Fax: +1 8586 74 4681 Tel: +1 716 837 1000 www.quikicpak.com Fax: +1 716 833 2926 13 Characterization www.williams-adv.com equipment 18 Chip foundry

J.A. Woollam Co. Inc. 16 Assembly/packaging Compound Semiconductor 645 M Street Suite 102, equipment Technologies Ltd Lincoln, NE 68508, Block 7, Kelvin Campus, USA Ismeca Europe Semiconductor SA West of Scotland, Glasgow, Tel: +1 402 477 7501 Helvetie 283, La Chaux-de-Fonds, 2301, Scotland G20 0TH, UK Fax: +1 402 477 8214 Switzerland Tel: +44 141 579 3000 www.jawoollam.com Tel: +41 329257111 Fax: +44 141 579 3040 Fax: +41 329257115 www.compoundsemi.co.uk Lake Shore Cryotronics Inc www.ismeca.com 575 McCorkle Boulevard, United Monolithic Semiconductors Westerville, OH 43082, USA J P Sercel Associates Inc Route departementale 128, Tel: +1 614 891 2244 220 Hackett Hill Road, BP46, Orsay, 91401, France Fax: +1 614 818 1600 Manchester, NH 03102, Tel: +33 1 69 33 04 72 www.lakeshore.com USA Fax: +33 169 33 02 92 Tel: +1 603 518 3200 www.ums-gaas.com Fax: +1 603 518 3298 14 Chip test equipment www.jpsalaser.com 19 Facility equipment Keithley Instruments Inc Kulicke & Soffa Industries 28775 Aurora Road, 1005 Virginia Drive, MEI, LLC Cleveland, OH 44139, Fort Washington, PA 19034, 3474 18th Avenue SE, USA USA Albany, OR 97322-7014, USA Tel: +1 440.248.0400 Tel: +1 215 784 6000 Tel: +1 541 917 3626 Fax: +1 440.248.6168 Fax: +1 215 784 6001 Fax: +1 541 917 3623 www.keithley.com www.kns.com www.marlerenterprises.net

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Tel: +1 804 740 8314 TECDIA Inc 20 Facility consumables Fax: +1 804 740 3814 (see section 16 for full contact details) W.L. Gore & Associates www.semitech.us 401 Airport Rd, Elkton, MD 21921-4236, USA 24 Consulting Tel: +1 410 392 4440 22 Used equipment Fax: +1 410 506 8749 Fishbone Consulting SARL www.gore.com Class One Equipment Inc 8 Rue de la Grange aux Moines, 5302 Snapfinger Woods Drive, 78460 Choisel, Decatur, GA 30035, USA France 21 Computer hardware Tel: +1 770 808 8708 Tel: + 33 (0)1 30 47 29 03 & software Fax: +1 770 808 8308 E-mail: [email protected] www.ClassOneEquipment.com Ansoft Corp 4 Station Square, Suite 200, 25 Resources Pittsburgh, PA 15219, USA 23 Services Tel: +1 412 261 3200 SEMI Global Headquarters Fax: +1 412 471 9427 Henry Butcher International 3081 Zanker Road, www.ansoft.com Brownlow House, 50–51 San Jose, High Holborn, CA 95134, Crosslight Software Inc London WC1V 6EG, UK USA 121-3989 Henning Dr., Tel: +44 (0)20 7405 8411 Tel: +1 408 943 6900 Burnaby, BC, V5C 6P8, Canada Fax: +44 (0)20 7405 9772 Fax: +1 408 428 9600 Tel: +1 604 320 1704 www.henrybutcher.com www.semi.org Fax: +1 604 320 1734 www.crosslight.com M+W Zander Holding AG Yole Développement Lotterbergstrasse 30, 45 rue Sainte Geneviève, Semiconductor Technology Stuttgart, Germany 69006 Lyon, Research Inc Tel: +49 711 8804 1141 France 10404 Patterson Ave., Suite 108, Fax: +49 711 8804 1950 Tel: +33 472 83 01 86 Richmond, VA 23238, USA www.mw-zander.com www.yole.fr

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1–3 February 2011 22–24 February 2011 Transformations in Lighting: 2011 DOE SNEC PV POWER EXPO 2011 Solid-State Lighting R&D Workshop Shanghai, China San Diego, CA, USA E-mail: [email protected] E-mail: [email protected] www.snec.org.cn www1.eere.energy.gov/buildings/ssl 27 February – 1 March 2011 16 February 2011 Industry Strategy Symposium (ISS Europe PHOTON’s 3rd Thin Film Conference 2011): ‘Europe – Exploiting its Strengths’ San Francisco, CA, USA Grenoble, France E-mail: [email protected] E-mail: [email protected] www.photon-expo.com/en www.semi.org/isseurope

16–19 January 2011 1–4 March 2011 2011 IEEE Radio & Wireless Symposium (RWS) LED CHINA 2011 Renaissance Glendale, Phoenix, AZ, USA Guangzhou, China E-mail: [email protected] E-mail: [email protected] http://rawcon.org www.LEDChina-gz.com

20–24 February 2011 6–10 March 2011 IEEE International Solid State Circuits OFC/NFOEC 2011 (Optical Fiber Conference (ISSCC 2011) Communication Conference and Exhibition/ San Francisco, CA, USA National Fiber Optic Engineers Conference) E-mail: [email protected] Los Angeles Convention Center, CA, USA http://128.100.10.145/isscc E-mail: [email protected] www.ofcnfoec.org 22–24 February 2011 Strategies in Light 2011 13–17 March 2011 Santa Clara Convention Center, CA, USA OTST 2011: International Workshop on E-mail: [email protected] Optical Terahertz Science and Technology www.strategiesinlight.com Santa Barbara, CA, USA advertisers’ index Advertiser Page no. Advertiser Page no. Aixtron AG 5 Plasma-Therm 17 AXT 68 Riber 27 EV Group 47 SEMI 103 Evatec 19 Tecdia 25 III/V-Reclaim 26 Temescal 53 Insaco 49 Troostwijk Veilingen B.V. 11 IQE 33 Umicore 0 LayTec 31 Veeco Instruments — MBE 9 Oxford Instruments Plasma Technology 35 Veeco Instruments — MOCVD 2 Oxford Instruments–TDI 41 Wafer Technology 37

semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 www.semiconductor-today.com Event Calendar111

E-mail: [email protected] 14–15 April 2011 http://otst2011.itst.ucsb.edu 3rd Photovoltaics Thin-Film Week, including: 15–17 March 2011 — International Workshop on CIGS Solar LASER World of PHOTONICS CHINA Cell Technology Shanghai, New International Expo Centre (SNIEC), China — 3rd Thin-Film Industry Forum (TIF 2011) E-mail: [email protected] Berlin, Germany www.world-of-photonics.net/en/laser-china/start E-mail: [email protected] www.solarpraxis.de/en/conferences 15–17 March 2011 SEMICON China 2011 16 – 21 April 2011 Shanghai New International Expo Centre (SNIEC), 54th Society of Vacuum Coaters Annual China Technical Conference (2011 SVC TechCon) E-mail: [email protected] Chicago, IL, USA www.semi.org/scchina-en E-mail: [email protected] www.svc.org 20–23 March 2011 Euro-MBE 2011: 18–20 April 2011 16th European Molecular Beam Epitaxy Semiconductor and Integrated Opto- Workshop Electronics Conference (SIOE’11) Alpe d’Huez, France Cardiff University, Wales, UK E-mail: [email protected] E-mail: [email protected] http://embe2011.neel.cnrs.fr www.astro.cardiff.ac.uk/research/pm/events/?page=sioe

21–23 March 2011 18–21 April 2011 SEMATECH Surface Preparation and SPIE Optics & Optoelectronics Cleaning Conference (SPCC 2011) Prague Congress Centre, Czech Republic Austin, TX, USA E-mail: [email protected] E-mail: [email protected] http://spie.org/x25077.xml www.sematech.org/meetings/spcc 18–21 April 2011 21–24 March 2011 Photonica: Lasers, Optics & Application 2011: GOMACTech-11 (36th annual Government 6th International Specialized Exhibition for Microcircuit Applications and Critical Laser, Optical & Optoelectronic Technologies Technology conference) ZAO Expocentre, Moscow, Russia Orlando, FL, USA E-mail: [email protected] E-mail: [email protected] www.photonics-expo.ru/en www.gomactech.net 25–29 April 2011 28 March 2011 SPIE Defense, Security, and Sensing 2011 3rd Thin Film Solar Summit Europe Orlando, FL, USA Berlin, Germany E-mail: [email protected] E-mail: [email protected] http://spie.org/defense- www.thinfilmtoday.com/europe security.xml?WT.mc_id=RCal-DSSW

4–6 April 2011 25–29 April 2011 CPV-7 International Conference on MRS 2011 Spring Meeting Concentrating Photovoltaic Systems Moscone West and San Francisco Marriott, CA, USA Las Vegas, NV, USA E-mail: [email protected] E-mail: [email protected] www.mrs.org/s_mrs/sec.asp?CID=21379&DID=246341 www.cpv-conference.org 26–28 April 2011 13–15 April 2011 ISSTT 2011: 22nd International Symposium 11th Fiber Optics Expo (FOE 2011) on Space Terahertz Technology Tokyo Big Sight, Japan Tucson, AZ, USA E-mail: [email protected] E-mail: [email protected] www.foe.jp/en www.nrao.edu/meetings www.semiconductor-today.com semiconductorTODAY Compounds&AdvancedSilicon • Vol. 5 • Issue 10 • December 2010/January 2011 Advertisers choose Semiconductor Today for its... • Accurate, timely editorial coverage of key issues • Highly targeted 10,000+ international circulation • Highly competitive rates • Magazine, website and E-brief package options • Direct, rapid delivery by e-mail and RSS feeds

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Photo: Close-up of SolFocus concentrated photovoltaic (CPV) power unit.