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LDMOS
MW6IC2420NBR1 2450 Mhz, 20 W, 28 V CW RF LDMOS Integrated
RF LDMOS/EDMOS: Embedded Devices for Highly Integrated Solutions
Gan Or Gaas, TWT Or Klystron - Testing High Power Amplifiers for RADAR Signals Using Peak Power Meters
Quiescent Current Control for the RF Integrated Circuit Device Family
Ampleon Company Presentation
50V RF LDMOS an Ideal RF Power Technology for ISM, Broadcast and Commercial Aerospace Applications Freescale.Com/Rfpower I
Biasing LDMOS FET Devices in RF Power Amplifiers
Analysis of Trigger Behavior of High Voltage LDMOS Under TLP and VFTLP Stress
Design of L-Band High Speed Pulsed Power Amplifier Using Ldmos Fet
Development and Future Prospects of Rf Sources for Linac Applications
Ldmos Modeling and High Efficiency Power Amplifier Design Using Pso Algorithm
Load Devices
ECSS-Q-HB-60-02A 1 September 2016
RF Power LDMOS Transistors
Advancing Silicon Performance Beyond the Capabilities of Discrete
Hot Carrier Effect on Ldmos Transistors
Freescale Semiconductor's MET LDMOS Model
RF Power Amplification Using a High Voltage, High Current IGBT
Top View
RF Power Sources for Xfels and Erls
CWRF2016 Solid State RF Amplifier Development at the Advanded
Fully Orthogonal Multi-Carrier Predistortion Linearization for RF Power Amplifiers
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson
RF LDMOS Technology for Pulsed L-Band Transmitters
A New Latch-Free LIGBT on SOI with Very High Current Density and Low Drive Voltage Q ⇑ J
RF Power LDMOSFET on SOI James G
THE DEVELOPMENT of HIGH POWER SOLID-STATE AMPLIFIER in NSRRC Tsung-Chi Yu#, Chaoen Wang, Lung-Hai Chang, Ming-Chyuan Lin, Meng-Shu Yeh, NSRRC, Hsinchu, Taiwan
AMP PP 2017 0503.Indd
MW7IC008NT1 100-1000 Mhz, 8 W Peak, 28 V RF LDMOS Wideband
BD180 – a New 0.18 Μm BCD (Bipolar-CMOS-DMOS)
LDMOS Ruggedness Reliability.Indd
Lateral Power Mosfets Hardened Against Single Event Radiation Effects
Lptv 8000 T2
LDMOS Channel Thermometer Based on a Thermal Resistance Sensor for Balancing Temperature in Monolithic Power Ics
Design Study of a High Efficiency LDMOS RF Amplifier
Performance Optimization of LDMOS Transistor with Dual Gate Oxide for Mixed-Signal Applications
120V Low Side LDMOS Device with Sided Isolation of 0.35Μm CMOS