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RF Power LDMOS Transistors

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RF Power LDMOS Transistors NXP Semiconductors Document Number: MRFE6VS25N Technical Data Rev. 2, 03/2019 RF Power LDMOS Transistors High Ruggedness N--Channel MRFE6VS25NR1 Enhancement--Mode Lateral MOSFETs MRFE6VS25GNR1 RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using NXP’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are 1.8--2000 MHz, 25 W, 50 V encountered. WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD =50Volts (1) Frequency Pout Gps D IMD (MHz) Signal Type (W) (dB) (%) (dBc) 1.8to30(2,6) Two--Tone 25 PEP 25 51 -- 3 0 (10 kHz spacing) 30--512 (3,6) Two--Tone 25 PEP 17.1 30.1 -- 3 2 (200 kHz spacing) T O -- 2 7 0 -- 2 PLASTIC 512 (4) Pulse (100 sec, 25 Peak 25.4 74.5 — MRFE6VS25NR1 20% Duty Cycle) 512 (4) CW 25 25.5 74.7 — 1030 (5) CW 25 22.5 60 — Load Mismatch/Ruggedness TO--270G--2 Frequency Pin Test (MHz) Signal Type VSWR (W) Voltage Result PLASTIC MRFE6VS25GNR1 30 (2) CW >65:1 0.23 50 No Device at all Phase (3 dB Degradation Angles Overdrive) 512 (3) CW 1.6 (3 dB Overdrive) Gate 21Drain 512 (4) Pulse 0.14 Peak (100 sec, 20% (3 dB Duty Cycle) Overdrive) 512 (4) CW 0.14 (3 dB Overdrive (Top View) 1030 (5) CW 0.34 Note: The backside of the package is the (3 dB source terminal for the transistor. Overdrive Figure 1. Pin Connections 1. Distortion products are referenced to one of two tones. See p. 13, 20. 2. Measured in 1.8--30 MHz broadband reference circuit. 3. Measured in 30--512 MHz broadband reference circuit. 4. Measured in 512 MHz narrowband test circuit. 5. Measured in 1030 MHz narrowband test circuit. 6. The values shown are the minimum measured performance numbers across the in- dicated frequency range. Features Wide operating frequency range Extreme ruggedness Unmatched, capable of very broadband operation Integrated stability enhancements Low thermal resistance Extended ESD protection circuit 2012, 2019 NXP B.V. MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data NXP Semiconductors 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature TC --40 to +150 C (1,2) Operating Junction Temperature TJ --40 to +225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case RJC 1.2 C/W CW: Case Temperature 80C, 25 W CW, 50 Vdc, IDQ = 10 mA, 512 MHz Thermal Impedance, Junction to Case ZJC 0.29 C/W Pulse: Case Temperature 77C, 25 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 10 mA, 512 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (TA =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current IGSS — — 400 nAdc (VGS =5Vdc,VDS =0Vdc) Drain--Source Breakdown Voltage V(BR)DSS 133 142 — Vdc (VGS =0Vdc,ID =50mA) Zero Gate Voltage Drain Leakage Current IDSS — — 2 Adc (VDS =50Vdc,VGS =0Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 7 Adc (VDS = 100 Vdc, VGS =0Vdc) On Characteristics Gate Threshold Voltage VGS(th) 1.5 2.0 2.5 Vdc (VDS =10Vdc,ID =85Adc) Gate Quiescent Voltage VGS(Q) 2.0 2.4 3.0 Vdc (VDD =50Vdc,ID = 10 mAdc, Measured in Functional Test) Drain--Source On--Voltage VDS(on) — 0.28 — Vdc (VGS =10Vdc,ID = 210 mAdc) Dynamic Characteristics Reverse Transfer Capacitance Crss — 0.26 — pF (VDS =50Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc) Output Capacitance Coss — 14.2 — pF (VDS =50Vdc 30 mV(rms)ac @ 1 MHz, VGS =0Vdc) Input Capacitance Ciss — 39.2 — pF (VDS =50Vdc,VGS =0Vdc 30 mV(rms)ac @ 1 MHz) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. (continued) MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data 2 NXP Semiconductors Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1) Functional Tests (In NXP Test Fixture, 50 ohm system) VDD =50Vdc,IDQ =10mA,Pout = 25 W Peak (5 W Avg.), f = 512 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 24.0 25.4 27.0 dB Drain Efficiency D 70.0 74.5 — % Input Return Loss IRL — -- 1 6 -- 1 0 dB Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ =10mA Frequency Signal Pin (MHz) Type VSWR (W) Test Voltage, VDD Result 512 Pulse >65:1 0.14 Peak 50 No Device Degradation (100 sec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive) CW 0.14 (3 dB Overdrive) Table 6. Ordering Information Device Shipping Information Package MRFE6VS25NR1 TO--270--2 R1 Suffix = 500 Units, 24 mm Tape Width, 13--Inch Reel MRFE6VS25GNR1 TO--270G--2 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 100 1.06 Ciss IDQ =10mA VDD =50Vdc 1.04 Coss 10 1.02 GS(Q) 1 100 mA 1 0.98 NORMALIZED V C, CAPACITANCE (pF) Crss 150 mA 0.96 Measured with 30 mV(rms)ac @ 1 MHz 50 mA VGS =0Vdc 0.1 0.94 02010 30 40 50 60 -- 4 0--20 0 20 40 60 80 100 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C) Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Normalized VGS and Quiescent Current versus Case Temperature IDQ (mA) Slope (mV/C) 10 --2.160 50 --1.790 100 --1.760 150 --1.680 108 ID =0.6Amps VDD =50Vdc 107 106 0.7 Amps 0.9 Amps MTTF (HOURS) 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. Figure 4. MTTF versus Junction Temperature — CW MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data 4 NXP Semiconductors 512 MHz NARROWBAND PRODUCTION TEST FIXTURE C1 C14 B2 C13 B1 L3 C2 C3 C4 C15 C5* L1 L2 C12 C6 C10* C8 C11 C7 C9* CUT OUT AREA MRFE6VS25N Rev. 1 *C5, C9 and C10 are mounted vertically. Figure 5. MRFE6VS25NR1 Narrowband Test Circuit Component Layout — 512 MHz Table 7. MRFE6VS25NR1 Narrowband Test Circuit Component Designations and Values — 512 MHz Part Description Part Number Manufacturer B1, B2 Long Ferrite Beads 2743021447 Fair-Rite C1 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C2, C13 0.1 F Chip Capacitors CDR33BX104AKWY AVX C3, C14 0.01 F Chip Capacitors C0805C103K5RAC Kemet C4,C11,C12 180 pF Chip Capacitors ATC100B181JT300XT ATC C5 18 pF Chip Capacitor ATC100B180JT500XT ATC C6 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C7 15 pF Chip Capacitor ATC100B150JT500XT ATC C8 36 pF Chip Capacitor ATC100B360JT500XT ATC C9 4.3 pF Chip Capacitor ATC100B4R3CT500XT ATC C10 13 pF Chip Capacitor ATC100B130JT500XT ATC C15 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp L1 33 nH Inductor 1812SMS-33NJLC Coilcraft L2 12.5 nH Inductor A04TJLC Coilcraft L3 82 nH Inductor 1812SMS-82NJLC Coilcraft PCB 0.030, r =2.55 AD255A Arlon MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data NXP Semiconductors 5 L3 B2 VSUPPLY B1 + V BIAS C12 C13 C14 C15 + C1 C2 C3 C4 L2 L1 RF OUTPUT Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C11 C9 C10 C5 C6 C7 C8 DUT Figure 6. MRFE6VS25NR1 Narrowband Test Circuit Schematic — 512 MHz Table 8. MRFE6VS25NR1 Narrowband Test Circuit Microstrips — 512 MHz Microstrip Description Microstrip Description Z1 0.2350.082 Microstrip Z11 0.4750.270 Microstrip Z2 0.0420.082 Microstrip Z12 0.0910.082 Microstrip Z3 0.6820.082 Microstrip Z13 0.1700.082 Microstrip Z4* 0.2000.060 Microstrip Z14* 0.6700.082 Microstrip Z5 0.3240.060 Microstrip Z15 0.2800.082 Microstrip Z6* 0.2000.060 Microstrip Z16* 0.4130.082 Microstrip Z7 0.0670.082 Microstrip Z17* 0.2590.082 Microstrip Z8 0.1420.082 Microstrip Z18 0.7610.082 Microstrip Z9 0.4810.082 Microstrip Z19 0.3410.082 Microstrip Z10 0.1900.270 Microstrip * Line length includes microstrip bends MRFE6VS25NR1 MRFE6VS25GNR1 RF Device Data 6 NXP Semiconductors TYPICAL CHARACTERISTICS — 512 MHz 35 50 VDD =50Vdc VDD =50Vdc 30 Pin =0.07W 45 IDQ =10mA f = 512 MHz f = 512 MHz 25 40 20 35 15 30 10 25 , OUTPUT POWER (dBm) , OUTPUT POWER (WATTS) out out P P 5 20 0 15 0 1 234 0105 15 20 25 VGS, GATE--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) Figure 7. CW Output Power versus Gate--Source Voltage at a Constant Input Power f P1dB P3dB (MHz) (W) (W) 512 27.8 31.4 Figure 8. CW Output Power versus Input Power 27 90 -- 3 0 _C VDD =50Vdc 26 80 IDQ =10mA f = 512 MHz 25 70 25_C Gps 24 60 50 23 85_C TC =--30_C 22 40 , POWER GAIN (dB) DRAIN EFFICIENCY (%) ps 85_C G 25_C D 21 30 D, 20 20 19 10 0.3 1 10 50 Pout, OUTPUT POWER (WATTS) Figure 9.
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