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Ghavam Shahidi
TSMC DAY at MIT 7 MTL DAY at FOXCONN 8 MTL DAY at TEXAS INSTRUMENTS MTL Teams with the DSP MEDICAL ELECTRONIC SYSTEMS Leadership University Program
RLE Currents | December 1988 (8.9Mb PDF)
IBM Research Report SOI Series MOSFET for Embedded High
Electrical Characterization of Sub-30Nm Gatelength SOI Mosfets Terence Kane, Michael P
1.0 Submicron Structures Technology and Research
(12) United States Patent (10) Patent No.: US 6, 180,486 B1 Leobandung Et Al
Highlights from the Chicago Meeting
Device Scaling of High Performance MOSFET with Metal Gate High-K At
Decadal Plan Full Report
UNIVERSITY of CALIFORNIA Los Angeles Design, Evaluation and Co
Performance Analysis of 8-Bit ALU for Power in 32 Nm Scale
Ieee Cledo Brunetti Award Recipients
Highlights from CSTIC 2013
Advanced Flexible Electronics: Challenges and Opportunities
DIMITRI ANTONIADIS Page 22 RESEARCH New Analog Circuits Could Impact Consumer Electronics
IBM Research Report the Path from Invention to Product for The
Epitaxial Lift-Off Process for Gallium Arsenide Substrate Reuse and flexible Electronics
Transport Enhancement Techniques for Nanoscale Mosfets
Top View
Vlsi-Tsa 2019)
The Limits of CMOS Scaling from a Power- Constrained Technology Optimization Perspective
Edoxde Box -102
The Impact of Dennard's Scaling Theory Sscs NL0107 1/8/07 9:54 AM Page 2
Fully Depleted SOI", Baltimore, USA
Device Options and Trade-Offs
Nanoelectronic Devices and Integrations on Silicon Platform Today and Tomorrow
Annual Report – Period 5
Downloadform
Decadal Plan for Semiconductors Decadal Plan Interim Report
Solid Stal Physic, Electro Ncs and 0 I 4
Optimizing CMOS Technology for Maximum Performance
Decadal Plan for Semiconductors FULL REPORT
Experimental Study of Electron Velocity Overshoot in Silicon Inversion Layers
Troni,, and Optics Tion 1 Materials and F Tion 2 C Id D .Tion 4 RLE Progress Report Number 132 Section 1 Materials and Fabrication
Final Period 8 Annual Report January 30, 2018 for PUBLIC
Fully Depleted SOI Technologies Y