Chapter 1 Micro- and Nanoelectronics (Dan Dascălu)

Chapter 1_Micro- and nanoelectronics

Chapter 1 Micro- and nanoelectronics (Dan Dascălu) This chapter is devoted to the development in Romania of the domain of semiconductor devices, integrated circuits, micro- and nanoelectronics, including nuclear electronics. We are following the trace of the doctoral school from the Faculty of Electronics and Communications at the Polytechnical Institute of Bucharest, scientific research and technological development on the Băneasa industrial platform, research and design activities in Romania after December 1989. The scientific career abroad of distinguished Romanian specialists is also presented. 1. Under the supremacy of the Moore’s law Micro- and nanoelectronics is name now used for the semiconductor industry (with crystalline silicon, as basic semiconductor material). The transistor (as well as the integrated circuit with transistors) is the basic element. The empirical Moore’s law1 is governing the continuous increase of the number of transistors per unit area of the integrated circuit. The importance of this law for the strategic development of the semiconductor industry (synchronizing the technological development with the opening of new markets) was recently reviewed by Andreas Wild2. The same author was also considering the present perspective of this industry in Romania3. 2. The school of semiconductor devices (Professor Mihai Dragonesque)

2.1 Mihai Drăgănescu as professor and doctoral supervisor (Gheorghe Brezeanu)

At the beginning of sixties, the Chair for Vacuum Tubes, Transistors and Electronic Circuits from the Electronics Faculty of the Polytechnical Institute of Bucharest was headed by professor Tudor Tănăsescu, corresponding member of the Romanian Academy, also technical director of the Institute for Nuclear Physics (IFA). Unfortunately, he died in 1961, sixty years old.

The follower as the head of the Chair (until 1990)4 was Mihai Drăgănescu (Fig. 2.1). He was also the supervisor of numerous Ph. D. students (starting 1966). As head of the school of semiconductor devices, his activity was extensively presented in a recent volume (in Romanian) 5. We are quoting (adapted from Romanian): He was a model, from the teaching point of view. His lectures6 have been crystal-clear and well documented, with an adequate mathematical support, with intuitive physical models and new results from literature, including his own research. In about 30 years he coordinated almost an equal number of Ph.D. students, the first generation of the Romanian school of Microelectronics (including members of the Romanian Academy, university professors or reputed specialists in Silicon Valley (Sun Disk, National Semiconductor etc.).

Fig. 2.1 Acad. Mihai Drăgănescu

1 Moore, G.E., “Cramming More Components on to Integrated Circuits”, Electronics, 19 April, 1965, p. 114; republished in Proceedings of the IEEE, vol. 86, nr. 1, p. 82, January 1998. 2 Andreas Wild „Overview”, pp. 9- 22 in „Advances in micro- and nanoelectronics”, Publishing House of the Romanian Academy, 2018 (see http://www.link2nano.ro/acad/mne/volume27.html). 3 Micro- and Nanoelectronics in Romania from an international perspective, https://www.link2nano.ro/acad/FRMNE/docs/Chapter_10_en.pdf 4 Later, the Chair for Electron Devices, Circuits and Apparatus. 5 Școala românească de micro- și nanoelectronică (in Romanian, coordinator Dan Dascălu), Publishing House of the Romanian Academy, 2018. This volume will be frequently qouted below as SRMN 2018. 6 He was teaching Vacuum Tubes, Transistors and Electronic Circuits (1961-1965), Theory and Design of Integrated Circuits (1971-1972), Electron Devices and Circuits (1985-1989).

Chapter 1_Micro- and nanoelectronics

„The electron processes...“7 is the first monograph about the transistor published in Romania (one of the first in the entire world). This volume includes an original theory about high injection levels in transistor. The Solid- State Electronics8 is a treatise about the physics of semiconductors, an essential lecture for Ph. D. students in microelectronics. The Functional Electronics9 is a new approach to the field. We are also stressing that Prof. Drăgănescu was contributing to the founding of the semiconductor industry and semiconductor research.

Prof. Mihai Drăgănescu was the supervisor of 26 Ph. D. students10. Eight of them are now, in turn, supervisors at the Doctoral School of the Faculty of Electronics, Communications and Information Technology (headed by Prof. Gheorghe Brezeanu).

2.2 The Doctoral School at the Faculty of Electronics and its contribution to the vocational training in microelectronics11

The doctoral school of the Faculty of Electronics was founded in 2012. It has more than 300 Ph.D. students, supervised by 50 professors in signal processing, information technology, computer science and engineering, communication networks, microelectronics, industrial electronics. In the first 6 years, more than 150 theses have been publicly presented. We are mentioning the cooperation with the National Institute for R&D in Microtechnologies, the later contributing with the infrastructure and competences to research in microsystems, specifically micro-electro mechanical systems (MEMS) in microfluidics, microwave and millimetre wave components, silicon carbide (SiC) devices etc. The interaction of Ph.D. students with ON Semiconductor, Infineon Technologies and Microchip was finalized with new analog integrated circuits in CMOS and BiCMOS technologies.

2.3 Research in the Department of Electron Devices, Circuits and Architectures.

2.3.1 Electron Devices and Circuits12. The research groups „Microwave semiconductor devices“ (1973) and „Physical Electronics“ (1990), respectively, have been set-up and headed by professor Dan Dascălu13. Professor Marcel Profirescu was in charge (since 1976) of the R&D Centre in Microelectronics (EDIL), with computer simulation and parameter extraction for the design of analog and digital systems. The research conducted by professor Adrian Rusu14 is related to Schottky diodes with lateral impurity gradient, electronically variable capacitor, breakdown of the MOS capacitor, breakdown of PN junctions with field electrode, unified electrical models for MOS transistors, Zener diodes and static induction transistor. We are also mentioning the following projects: the first mixed analog-digital CMOS integrated circuit in Romania (1987, Claudius Dan); Thermal analysis of electron devices and integrated circuits (Mircea Bodea, Andrei Silard15); Advanced Devices on Silicon Carbide and Diamond and Termination on the Oxide Ramp, coordinated by professor Gheorghe

7 M. Drăgănescu, Electronic processes in circuit semiconductor devices (in Romanian), Publishing House of the Romanian Academy, 1962. 8 M. Drăgănescu, Solid - State Electronics (in Romanian) Technical Publishing House, Bucharest, 1972. 9 M. Drăgănescu, G. Ştefan, C. Burileanu, Functional Electronics (in Romanian) Technical Publishing House, Bucharest, 1991. 10 The list of Ph. D. students supervised by professor Mihai Drăgănescu (the year of thesis is indicated in paranthesis) is: Dan Dascălu (1970), Roman Stere (1972), Constantin Bulucea (1974), Adrian Rusu (1975), Emil Sofron (1977), George Samachişă (1977), Ion Costea (1977), Anca Manolescu (Popescu) (1978), Anton Manolescu (1978), Vladimir Doicaru (1979), Gheorghe Ştefan (1980), Gheorghe Brezeanu (1981), Ali Muheidli Hussein (1981), Ioan Drăghici (1985), Corneliu Burileanu (1986), Dan Steriu (1986), Cornel George Mânduţeanu (1987), Radu Alexandru Dragomir (1987), Petru Alexandru Dan (1988), Nicolae Mihai Iosif (1988), Mircea Bodea (1993), Mihai Mihăilă (1997), Nicolae Marin (1997), Dan Silvestru Popescu (1998), Grigore Stolojanu (1998), Ion Mihuţ (1999). 11 See Section 3.3 (Gheorghe Brezeanu) of SRMN 2018 (op. cit.). 12 Gheorghe Samachişă, the inventor of split gate flash memory, one of the founders of Sun Disk (Vice-President in charge with technology), in Silicon Valley, left the country at the beginning of ’80. 13 See section 2.4 (including biographical notes of professors Dan Dascălu and Dan Neculoiu). 14 A biographical note can be found in Section 2.7 (In Memoriam). 15 A biographical note of Andrei Silard can be found in section 2.7 (In Memoriam).

Chapter 1_Micro- and nanoelectronics

Brezeanu16. Finally, we are quoting the Laboratory for Micro- and nanoelectronics technologies17, coordinated by professor Anca Manolescu and professor Anton Manolescu.

2.3.2 Domain of electronic systems and architectures18. We are mentioning: Development of microelectronic applications in CNAE (Centre for New Electronic Architectures) under the aegis of the Romanian Academy, see http://cnae.racai.ro/; Development of electronic circuits and apparatus; SpeeD (Speech and Dialogue) laboratory for research in the domain of natural languages (1984), developing systems of automatic recognition of the Romanian language, see ht tps://speed.pub.ro/; Laboratory for Functional Electronics, now Digital Circuits and Architectures Laboratory, ARH19, developing the projects DIAGRAM20, DIALISP21, CONNEX22; CORAL project: minicomputer with PDP-11 architectures, later fabricated, in an original version, by FCE, see https://ro.wikipedia.org/wiki/CORAL; project Free Linux for Romania, see http://linux.punct.info/.

2.3 Research groups coordinated by professor Dan Dascălu

2.4.1 Dan Dascălu: biographical note. Born in 1942, graduating in 1965 the Polytechnical Institute of Bucharest (now University „Politehnica“ of Bucharest, UPB), Faculty of Electronics and Communications. He has teaching activity in this Faculty since 1965 up to the present. Prof. Dascălu is full professor since 1990 and professor emeritus since 2011. He was in charge of the Chair for Electronic Devices, Circuits and Apparatus between 1981 and 1985. He is teaching now at the disciplines of Electron Devices and Fundamental Electronic Circuits at the Faculty of Electronics, Communications and Information Technologies. He is the co-author and coordinator of the volumes Circuite electronice (1981); Dispozitive şi circuite electronice (1982), published in Romanian. Fig. 2.2 Acad. Dan Dascălu

He obtained the Ph. D. degree under the supervision of prof. Mihai Drăgănescu with a thesis devoted to pace- charge limited currents in solids (1970), following a specialization In U.K. (research fellow at the Microelectronics Laboratory, University of Birmingham, 1968-1969). He studied the space-charge and transit- time effects in solids, later on publishing a scientific monograph in English23. The second monograph published in English was dedicated to unipolar solid-state devices24, one of the first kind when the electronics was still dominated by bipolar devices. To our knowledge, these two books are the first scientific monographs published abroad by Romanian authors (a total of more than 1000 pages). He is Ph.D. supervisor since 1990. He also coordinated (2010-2013) a project of postdoctoral studies in „micro- and nanotehnologies“ (for 35 students).

Dan Dascălu is full member of the Romanian Academy since 1993 (corresponding member since 1990). He was President of the Section for Information Science and Technology (1994-1998). Since 1998 he is Editor-in-Chief of the „Romanian Journal for Information Science and Technology “, a publication of the Romanian Academy25, and President of the Commission for Science and Technology of Microsystems of the Romanian Academy. Acad. Dan Dascălu organized the „National Seminar for Nanoscience and Nanotechnology “(in 2019 at its 18th edition).

16 Details can be found in Section 2.5, including a biographical note of professor Gheorghe Brezeanu. 17 A short presentation of this laboratory can be found in section 2.6. 18 This paragraph was introduced by professor Gheorghe Ștefan. See also the Artificial Intelligence Chapter in this volume. 19 http://arh.dcae.pub.ro/ 20 https://www.cocoon.ro/948/# 21 https://ro.wikipedia.org/wiki/DIALISP 22 http://users.dcae.pub.ro/~gstefan/2ndLevel/connex.html 23 Dan Dascălu, „Transit-time effects in unipolar solid-state devices“, Abacus Press, Tunbridge Wells, Kent, Publishing House of the Romanian Academy (1974). 24 Dan Dascălu, „Electronic processes in unipolar solid-state devices“, Abacus Press, Tunbridge Wells, Kent, Publishing House of the Romanian Academy (1977). This is a more elaborated version of Dan Dascălu „Injecţia unipolară în dispozitive electronice semiconductoare“ (in Romanian), Publishing House of the Romanian Academy (1972). 25 Available on-line, see www.romjist.ro.

Chapter 1_Micro- and nanoelectronics

He is also the coordinator of the „Micro- and Nanoengineering“ series (27 volumes published in English by the Romanian Academy)26. He was (1998-2016) President of the IEEE Annual Semiconductor Conference (CAS, IEEE event, in 2016 at its 39th edition). In 2013 he was the President of the Programme Committee ESSDERC (European Solid-State Device Research Conference), at its 43rd edition, in Bucharest.

Dan Dascălu founded and coordinated as director and general director, respectively, Centre of Microtechnology (1991), becoming in 1993 Institute of Microtechnology, and from 1996 (after merging with ICCE), National Institute for R&D in Microtechnologies (IMT Bucharest). At the end of his mandate (June 2011), IMT has the best performance in European research programmes among the 46 national institutes from Romania (according to the European Commission), and IMT-MINAFAB (Centre for Micro- and Nanofabrication) was the first open experimental infrastructure in this field in Eastern Europe. He continued to work in IMT until June 2017, being the coordinator of the Centre of Nanotechnologies, a group of research laboratories under the aegis of the Romanian Academy. He coordinated a number of European projects such as a couple of TEMPUS projects (1991- 1993), and support projects from Framework Programme 6 (MINAEAST, ROMNET-ERA, MINOS- EURONET). He coordinated (1997-2000) the assembling of the national programme related to the „Information society “and was distinguished as Officer of the National Order „Serviciul Credincios “(2000).

2.4.2 Research group „Microwave semiconductor devices “(since 1973). Realization of the IMPATT (IMPact- Avalanche Transit-Time) diodes for microwave generation. This group realized, in cooperation with IPRS- Băneasa semiconductor factory, small and medium power IMPATT diodes for X-band (compatible with Hewlett Packard devices), later on introduced in fabrication27 (with the key contribution by Dr. Nicolae Marin). The experimental model of the low power IMPATT diode (grouped with a monograph published in English) received the „Traian Vuia“ Award of the Romanian Academy (1974)28. Later on, the research group from UPB was involved in developing digital microwave systems for X band (with IMPATT diodes for both transmitter and receiver, as local oscillator29). The research (in cooperation with a number of local factories) lead to digital radio- relays for two different applications: a) computer interconnection at 2 Mb/s (prototype); b) digital telephony, 8 Mb/s capacity (experimental model, just before December 1989).

Research on metal-semiconductor contacts. The research group from UPB (Dan Dascălu, Gh. Brezeanu) started in 1975 (in cooperation with Petru Dan et al from IPRS Băneasa) a research related to the structure and properties of the contact realized by metallization of silicon, in the fabrication process of semiconductor devices and integrated circuits. The results have been published in international journals, as well as in a scientific monograph30. The paper devoted to modelling of nonuniform Al/Si contacts, published in 1981 in Solid State Electronics31 is frequently cited in literature, even decades after its publication

2.4.3 The research group of „Physical electronics “(after 1990) was continuing the work on microwave semiconductor devices (see Dan Neculoiu, below), but also extending its activity to microsystems. First of all, two TEMPUS projects32 (1991-1993) have been devoted to the specialization of human resources. A teaching

26 Available on-line at http://link2nano.ro/acad/mne/. 27 Dan Dascălu, „De la tuburi electronice la dispozitive semiconductoare generatoare de microunde“ (in Romanian), Noema, vol. XVI, pp. 315-325 (2016). 28 Dan Dascălu, Nicolae Marin, Andrei Mihnea, Ioan Costea, Gheorghe Brezeanu, “Unconventional Microwave devices”. 29 D. Dascălu, I. Costea, T. Tebeanu, A. Zamfir, Al. Boian – Experimentarea unui sistem de interconectare a calculatoarelor pe purtătoare de microunde (in Romanian), in Probleme de automatizare, vol.13 – Progrese în electronică și informatică, Editura Academiei RSR, 1983, pp. 79-86. 30 D. Dascălu, G. Brezeanu, P.A. Dan, „Contactul metal-semiconductor în microelectronică“ (in Romanian) ,Ed. Academiei Române, Bucureşti, 1988. 31 D. Dascălu, G. Brezeanu, P.A. Dan, C. Dima, „Modelling electrical behaviour of non-uniform Al/Si Schottky diodes“, Solid State Electronics, vol. 24 (1981), pp. 897-904. 32 These projects provided specialization grants (tipically for one year) in reputed universities and research institutes from Western Europe. We are mentioning Nicolae Marin (IPRS-Băneasa). Alexandru Müller (section 4.4.10), from ICCE, later on the coordinator of the excellence centre from IMT (secţiunea 6.3.1), Cornel Cobianu (section 4.4.2), Florin Udrea (section

Chapter 1_Micro- and nanoelectronics

laboratory devoted to computer-aided design (CAD) of integrated circuits used workstations SUN and Cadence software. The same group initiated (1991) the set-up of the Centre of Microtechnologies (CMT). By microtechnologies we had in mind technologies for microsystems. CMT became in 1993 the Institute for Microtechnologies, operating in cooperation with company Microelectronica S.A.

2.4.4 Prof. Dan Neculoiu continues the research devoted to semiconductor microwave devices. Dan Neculoiu (born in 1959) graduated the Faculty of electronics from Bucharest in 1985. He finisched his Ph. D. studies in 1997 (supervised by Acad. Dan Dascălu), with a thesis on „Nonlinear modelling of integrated microwave circuits“. Since 2005 he is university professor. He cooperated with IMT Bucharest on: high-frequency modelling of microstructures; simulation of micromachined transmission lines and passive components; high-frequency and modelling of microstructurea; design and optimization of microwave microstructures.

Since 1999 he is coordinating the activity of UPB within INCO-COPERNICUS Project 977131 MEMSWAVE: „Micromachined Circuits for Microwave and Millimeter Wave Applications“, 1998-2001 (coordinator IMT Bucureşti). He was responsible for developing the techniques for design and experimental characterization of millimetre waves filters realized with coupled lines, as well as antennas for millimetre waves and receivers with direct detection on 38 and 77 GHz (realized by micromachining of Si and GaAs). The succesful integration of a Schottky diode with a folded double-slot antenna on a 2 micrometer thick was GaAs membrane was demonstrated. Prof. Neculoiu received the „Tudor Tănăsescu“ Award of the Romanian Academy for 2001. Fig. 2.3 Prof. dr. Dan Neculoiu

2.5 Research groups (devices with wide bandgap semiconductors etc. headed by Prof. Gh. Brezeanu33

Biographical note Gheorghe Brezeanu (born 1948) graduated in 1972 the Faculty of Electronics from Bucharest (section Engineers for Physics). The research activity was developed initially under the guidance of prof. Dan Dascălu (see above). He

obtained the Ph.D. degree in Microelectronics in 198134, Fig. 2.4 Prof. dr. becoming university professor (1992) and doctoral supervisor Gheorghe Brezeanu (1994). He is working in the Department for Electronic Devices, Circuits and Architectures.

2.5.1 Advanced devices on silicon carbide and diamond (1997-2015). The research developed pn diodes, Schottky diodes, MOS capacitors and photodetectors. Intelligent sensors on SiC for industrial applications (2010-2016). The main results are High sensitivity temperature sensors up to 450C and Sensors for hydro carbonates up to 250C. An original model for nonuniform Schottky contacts of silicide on SiC was suggested35. We are mentioning cooperation with University of Cambridge, Centro Nacional de Microelectronica (CNM) – Barcelona, INSA – Lyon, as well as a scientific monograph about devices on SiC36. He obtained the „Tudor Tănăsescu “Award of the Romanian Academy (1999) for a group of papers on SiC devices.

6.4.3), Daniel Lăpădatu (section 6.4.5). One of the two TEMPUS projects was coordinated at start by Cleopatra Căbuz, later on founding the Microsensors Lab of Honeywell Romania (section 4.4). 33 Details on the research work of Prof. Brezeanu may be found in section 2.5 of SRMN 2018 (op. cit.). 34 G. Brezeanu, „Modelarea contactului Al/Si din dispozitive semiconductoare și circuite integrate în vederea îmbunătățirii tehnologiei de fabricație“ (in Romanian), 1981, Ph.D. thesis, supervisor Acad. Mihai Drăgănescu. 35 G. Brezeanu ș.a., Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior. J. Applied Physics, Vol. 122 (2017), issue 8, id 084501. 36 F. Roccaforte, G. Brezeanu, P.M. Gammon, F. Giannazzo, S. Rascunà, M. Saggio, „Schottky contacts to Silicon Carbide: physics, device technology and applications“, see https://www.mrforum.com/product/9781945291852-3/.

Chapter 1_Micro- and nanoelectronics

2.5.2 Termination on Ramp Oxide. The reverse voltage of power devices may be increased by using the edge termination determining an uniformization of the electric field. The idea was to realize such a configuration by using a simple, low-temperature technology37. A paper38, published by Wiley Encyclopaedia, shows an almost ideal breakdown, with a uniform distribution of the current.

2.5.3 Laboratory for Electronic Devices and Circuits – Advanced Studies (DCE-SA), see also https://erris.gov.ro. Devices on SiC and diamond have been reported with reverse voltages of the order of kV and tens of A direct current have been reported (for the first time in Romania, parameters at the international level). Since 2010, the efforts moved on sensors on SiC and diamond. It is about detection of hydro carbonates and, respectively, temperature sensing. In the last case – testing in real industrial environment has been performed.

2.6 Laboratory for micro- and nano-electronic technologies (Anca Manolescu)

The laboratory „Micro- and nano electronic technologies and structures” (MNETL) was set-up in 1969, at the initiative of professor Mihai Dragonesque, at the beginning under the name „Laboratory of microelectronic circuits “. During the 1975-1990 period, a small-scale production has been conducted, with hybrid integrated microcircuits developed internally, with performances at the international level. Examples are: low-frequency active filters, D/A and A/D converters, wide-band UHF amplifiers, medium power audio amplifiers. The „Traian Vuia“ Award of the Romanian Academy was obtained in 1978. Among the researchers in this laboratory we are mentioning two with an outstanding international performance, namely Gheorghe Samachișă (co-founder and inventor at the company Sundisk, working in semiconductor memories), and Ștefan Cserveny (co-author of the widely recognized EKG model for MOS transistors). In the ’90 and especially after 2003, a number of projects (microcircuits based on organic polymers, circuits for communications, circuits for intelligent sensors) have been carried out and new equipment have been purchased and installed.

2.7 In Memoriam.

2.7.1 Adrian Rusu (1946-2012), corresponding member of the Romanian Academy, was head of the Chair Electronic Devices, Circuits and Apparatus (DCAE) of the Faculty of Electronics and Communications, University „Politehnica“ of Bucharest (UPB) for more than 20 years. Born in 1946, in 1968 he graduated the Faculty of Electronics as promotion head. Since 1975 he is Ph. D. in electronics, based on the thesis „Contributions to the theory and technology on Schottky structures on silicon“, with Acad. Mihai Drăgănescu as supervisor.

Fig. 2.5 Prof. dr. Adrian Rusu, Corresponding member of the Romanian Academy

He is university professor since 1990 (courses Electronic devices and circuits and Modelling of active microelectronic components). He was head of the Chair (1990-2012). Since 1994 he was corresponding member of the Romanian Academy/. His main research interest was connected to the following topics: Schottky diode with lateral gradient of impurity concentration (patent in Romania and Germany used for MONOCIP)39,40; MOS integrated circuits with resistive gate41,42; electronically controlled condenser and method of measurement of the

37 M. Bădilă, G. Brezeanu, C. Cobianu, P.A. Dan, F. Mitu „High capacity and voltage Schottky diodes manufacturated by epitaxial doping of silica layer with phosphorusand using molybdenum@-nickel@- silver@- metallic system and chromium@ or tungsten@ contact“, patent , nr. RO 104755/1991. 38 M. Bădilă, G. Brezeanu, F. Mitu, „Schottky Oxide Ramp Diodes“, in the Wiley Encyclopedia of Electrical and Electronics Engineering, vol. 18, Wiley Interscience Publication (John Wiley & Sons, Inc), New York, SUA, 1999, pp. 710-718. 39 A. Rusu, Dioda metal-semiconductor (in Romanian), Brevet România, nr. 60829 (1974). 40 A. Rusu, Metall-Halbleiterdiode, Brevet RFG, nr. 2452209 (1978). 41 D. Steriu, A. Rusu, Circuit integrat pentru comanda unei barete de diode electroluminiscente (in Romanian), Brevet România, nr. 92259 (1985). 42 A. Rusu, D. Steriu, Rezistor electronic comandat în tensiune (in Romanian), Brevet România, nr. 91460 (1985).

Chapter 1_Micro- and nanoelectronics

lifetime of excess charge carriers43; static-induction transistors with increased performance in voltage and frequency44; static induction tetrode 45. The most important scientific contributions of professor Rusu are related to: optimization of breakdown voltage in the gate-controlled pn junctions and Schottky diodes, respectively; universal curves for MOS capacitor breakdown46, model of the static induction transistor47. We are also mentioning two volumes with original research results published by the Romanian Academy48.

2.7.2 Andrei Silard (1944-1993) graduated Electronics in Moscow (1962-1967), became Ph. D. (1976) at the Polytechnic Institute of Bucharest. He was a researcher at the Institute of Research in Electronics in Bucharest (1967-1974). After 1974 he was teaching at the Faculty of Electronics, Chair for Electronic Devices, Circuits and Apparatus (DCAE), recognized as full professor in 1992. In 1993 he was elected corresponding member of the Romanian Academy. He introduced new disciplines: Power semiconductor devices (1987), Power optoelectronic devices (1990) at the Faculty of electronics and Optoelectronic and power devices (1991) at the Faculty of Electrical Engineering, both at the Polytechnic Institute of Bucharest.

Fig. 2.6 Prof. dr. Andrei Silard, corresponding member of the Romanian Academy

Prof. Silard designed for Romanian industry more than 20 new electronic devices such as thyristors, optothyristors, bipolar power transistors, optical sensors and solar cells. His main scientific contributions are related to breakdown in semiconductor devices, high efficiency solar cells, electrothermal analysis of power devices and integrated circuits. He published a couple of books in Romanian49 and received „Traian Vuia“ Award of the Romanian Academy (1981) for Contributions to electrothermal investigation of power semiconductor devices. He was also IEEE Fellow (1990) for contributions related to power and photonic silicon devices.

3. Scientific research and technological development in Romanian semiconductor industry Since 1962 we have a semiconductor factory (Întreprinderea de Piese Radio și Semiconductori, IPRS) on the Băneasa platform (North of Bucharest), starting with germanium devices and continuing with silicon devices and integrated circuits (bipolar technology). Later on, a microelectronic factory, based of CMOS technology was constructed (see below). 3.1 Semiconductor devices and integrated circuits fabrication on the Băneasa industrial platform 3.1.1 IPRS Băneasa – Brief history (Petru Dan)50. IPRS Băneasa was the main supplier of electronic components in Romanian industry (electronics, computers, automation, electrical engineering, communications, automotive industry, chemistry, railway transportation, agriculture etc. Later on, this factory was also exporting its products.

43 A. Rusu, Condensator variabil electronic (in Romanian), Brevet România, nr. 94905 (1986). 44 C. Postolache, A. Rusu, F. Găiseanu, Procedeu de obţinere a tranzistoarelor cu inducţie statică cu joncţiuni poartă retrase (in Romanian), Brevet România, nr. 97880 (1989); C. Postolache, A. Rusu, F. Găiseanu, Procedeu de fabricare a tranzistoarelor cu inducţie statică pentru tensiuni de străpungere mari (in Romanian), Brevet România, nr. 98191 (1989); C. Postolache, A. Rusu, F. Găiseanu, Procedeu de fabricare a tranzistoarelor cu inducţie statică de putere şi tensiune de străpungere ridicate (in Romnian), Brevet România, nr. 102481 (1990). 45 A. Rusu, C. Postolache, Tetroda cu inducţie statică (in Romanian), Brevet Români nr. 103530 (1991). 46 A. Rusu, D. Dobrescu, C. Anghel, The onset of the high level of injectionin MOS structures, 1999 IEEE International Semiconductor Conference, Sinaia, România, 153 (1999). 47 C. Bulucea, A. Rusu, A first-order theory of the static induction transistor, Solid State Electronics, 30, 1227 (1987). 48 Two volumes with original research results: Modelarea componentelor microelectronice active (in Romanian), Editura Academiei Române, 1990 („T. Tănăsescu“ Award of the Romanian Academy), Conducţie electrică neliniară în structuri semiconductoare (in Romanian), Editura Academiei Române, 2000. 49 „Diode şi tiristoare de putere“ (co-author, in Romanian), 1989; „Tiristoare cu blocare pe poarta GTO (in Romanian)“, 1990, both at the Technical Publishing House, Bucharest. 50 Elaborated on the basis of the interview of the former General of IPRS Băneasa Doina Didiv (08.11.2010), published by Nini Vasilescu on www.radioamator.ro. Detailed information can be found in SRMN 2018 (op cit).

Chapter 1_Micro- and nanoelectronics

The production started in 1962 with passive components (capacitors and resistors), active devices (germanium diodes and transistors, under licence Thomson CSF, France. Since 1969, the factory produced silicon diodes and thyristors (Slice, France). Since 1980, new licenses have been introduced (AEG, Germany), but a wide range of power devices was developed through internal efforts. The silicon integrated circuits have been fabricated (based on Thomson licence) after 1970. The last section was inaugurated in 1975 (silicon diodes and transistors, ITT licence). An extension to high power devices and high-frequency devices has been made later, based on internal development.

Unfortunately, after December 1989, the fight for survival of IPRS Băneasa (renamed Băneasa S.A.) on the external open market (the internal market practically disappeared) were not sustained by the privatization policy of the Romanian state. A 3.1.2 The semiconductor power devices factory, part of IPRS (Petru Dan). In 1990 IPRS had some competitive advantages in niche markets, such as power devices for automotive industry. The restructuring, however, was blocked by social pressure, whereas local authorities have adopted a catastrophic privatization policy, ignoring offers from very important investors. The activity was reduced to assembling of semiconductor devices and rectifying bridges, ceasing completely in 2008. 3.1.3 Petru Dan – biographical note. Petru Dan (born in 1950), graduated the Faculty of Electronics from Bucharest (as promotion head) in 1974. He was with IPRS Băneasa until 1996 (in the last years being the Director of the Power Semiconductor Devices Factory). Until 2017 he has various managerial positions in private companies, ending as Director of Linde (Germany) for operations in South-East Europe (2014-2017). Scientific and technical contributions: Schottky diode with edge protection – simulation, modelling, fabrication; Metal-semiconductor contact: experimental investigation, modelling, technology; Hybrid scanning device (including thyristor and rapid diode etc.); Technologies for medium power diodes and thyristors51. Managerial achievements: Performance of power devices factory from IPRS Băneasa. Performance of the Linde group in South-East Europe region. Fig. 3.1 Dr. Petru Dan

3.2 Microelectronica S.A., from the set-up of specialist group (1976), until the peak (1990) (Radu Bârsan)

A 3.2.1 Preparing the occurrence of the CMOS fabrication. The introduction of microelectronic technology was prepared well in advance by Dr. Constantin Bulucea, Director of ICCE (see section 6.3.1). He established a wide group of specialists for the construction of the new enterprise (including equipment purchasing, technology development etc.). We are mentioning first the following names: Dorel Prisecaru, George Smărăndoiu and Gelu Voicu (Radu Bârsan, see section 6.3.4, joined them in 1976). Other specialists have had also an important role: Radu Vancu (section 6.3.4), Andrei Vladimirescu section 6.3.3), Mircea Duşa (section 6.3.2), Adriana Delibaltov, Dumitru Cioacă, Horia Profeta, Ervin Gurău. Mircea Duşa was in charge of mask fabrication. Dorel Prisecaru and George Smărăndoiu have had a key role in planning and project implementation; Andrei Vladimirescu, Horia Profeta and Radu Vancu – developed the computer-aided design (CAD) of MOS (metal-oxide semiconductor) integrated circuits; Radu Bârsan, Adriana Delibaltov, Şerban Jelea, Elena Munţiu, Ileana Cernica, Raluca Leancu developed within ICCE a line of microfabrication for MOS integrated circuits; Gelu Voicu – was in charge with assembling-testing facility (licensed from SGS-Ates, Italy).

3.2.2 Structure and production of Microelectronica S.A. The enterprise Microelectronica S.A. (ME) was officially set-up in 1981 and started its activity one year later, under the Director Gheorghe Constantinescu (former deputy director of ICCE) and chief-engineer Dorel Prisecaru. The enterprise had three major departments (sections): Fabrication of MOS structures (Radu Bârsan); Assembling and testing of MOS structures (Gelu Voicu); LED, Light Emitting Diodes (Herman Ciubotaru, and then Dan Stoenescu). ME started with 40-50

51 Detailed information can be found in SRMN 2018 (op cit).

Chapter 1_Micro- and nanoelectronics

employees (mostly engineers from the initial group assembled in ICCE). At the peak of its activity, in 1990, the number was above 500 (working in three shifts). The section devoted to fabrication of structures developed new technologies devoted to 1k SRAM, 4k DRAM, CMOS 4000 series etc., more advanced than the initial Al-gate technology. Part of the production was exported. ME was part of the economic system developed in the communist countries from Eastern Europe. This system crashed after 1990, leaving ME without its principal market.

3.2.3 What happened with the specialists. Most of the engineers from Microelectronica S.A, left the country for companies in Silicon Valley, in California (by that time the global centre of microelectronic industry), and other outstanding companies across the world. Their successful career is illustrated by a number of biographical notes presented in this chapter.

3.4 Companies active in Computer-Aided Design (CAD) of integrated circuits.

3.4.1 ON Semiconductor România (former Catalyst România/Essex)52 (Cornel Stănescu53)

The Catalyst company (USA), established in 1986, went into difficulties at the beginning of ’90. Radu Vanco (Vancu), from Romania (established in US since 1984, section 6.3.4), had the idea to create in Romania Essex Com S.R.L., coordinated by Horia Profeta, CAD specialist from Microelectronica S.A., in order to take over activities of Catalyst. Many of the former colleagues of Horia Profeta joined him in the new company. After 2003, when Radu Vanco retired, the Romanian company becomes officially a subsidiary of Catalyst. Finally, in 2008, Catalyst was taken over by ON Semiconductor. Horia Pofeta was in charge of the Romanian subsidiary until 2016. Today, here we have more than 80 specialists (from different generations), working in management, design, testing and applications. Hundreds of integrated circuits (IC) and tens of patents elaborated here are behind a huge amount (may be billions) of components sold all over the world (digital, analogue or mixed-signal circuits). The majority of IC design from ON Semiconductor moved to Bucharest. Therefore, we can speak about a success story of Romanian engineering in microelectronics.

3.4.2 Infineon Technologies Romania54 (Traian Vișan55). Infineon Technologies AG (based in Germany) is a global leader in automotive electronics based on semiconductors (with more than 7 billion of euro in selling and 37.500 employees all over the world in 2017). Infineon Technologies Romania & CO SCS was founded in 2005. The subsidiary in Bucharest (Romania) is part of a European R&D network, also including centres in Graz and Villach (Austria), München (in Germany) and Padova (in Italy). More than 300 specialists are working in Bucharest, developing semiconductor products for a few areas of application: mobility (including automotive), energy efficiency and security. We are mentioning: (a) Power semiconductor devices and intelligent sensors for automotive (thermal and electrical motors), security (ABS, Airbag) and comfort (air conditioning, warming of seats etc.; (b) Microcontrollers for security in communications, banking; (c) software for automation and optimization of circuit design, zero-defects methodology, reducing the development cycle of products. This company is interacting with the Faculty of Electronics in developing new human resources and it is also involved in various research and innovation projects with partners from various countries.

4. Research unit in microelectronics.

4.1 Introduction (Dan Dascălu)

The research on the semiconductor platform Băneasa started (1969) with a centre of IPRS coordinated at the beginning by Prof. Mihai Drăgănescu. This centre became officially an independent institute in 1974. We are speaking about ICCE (Research Institute for Electronic Components). This institute developed a broad range of reseach and small-scale production activities, providing the human resources for the set-up of new activities in

52 Full text can be found in Chapter 8 from SRMN 2018 (op. cit.). 53 Cornel Stănescu graduated the Faculty of Electronics from Bucharest in 1984, and obtained the Ph.D. from the same Faculty in 1997. He was with ICCE/IMT (1984-1997). Since 1998 he is Catalyst/Essex/ON Semiconductor. 54 More details can be found in Chapter 8 from SRMN 2018 (op. cit.). 55 Traian Vișan graduated the Faculty of Electronics from Bucharest in 1989, and obtained the Ph.D. from the same Faculty in 1999. He is with Infineon Technologies Romania from 2005, occupying managerial positions since 2010.

Chapter 1_Micro- and nanoelectronics

fabrication of materials, components and applications, e.g. the new factory Microelectronica S.A. In 1990 three companies’ split-up from the institute. What remained from ICCE merged in 1996 with the Institute of Microtechnologies (IMT) giving birth to a national institute for research and development (IMT Bucharest).

IMT occurred in 1993 (from a research centre created in 1991). As explained in detail in section 4.3, the purpose of IMT was to convert the MOS technology from Microelectronica S.A. into microtechnologies devoted to a very special microelectronic component, namely microsystems (integrating microsensors and/or microactuators with processing of the electric signal). This was an exotic field by that time, but today microsystems fabrication (requiring specialized technologies) is a distinct part of the micro- and nanoelectronics industry. Even without a local industry, IMT Bucharest is surviving today excelling in European research projects and providing technological support for innovative SME’s.

4.2 Research and small-scale production in ICCE, Research institute for Electronic Components56 (Marius Bâzu57 )

4.2.1 The Research and Design Centre for Electronic Components, CCPCE Băneasa (1969-1974), was founded in 1969 and directed initially by prof. Mihai Drăgănescu. Then, with Ioan Bătrâna as Director of CCPCE, various diodes, transistors, thyristors have been designed and introduced into fabrication at IPRS- Băneasa (1970-1974).

4.2.2 Continuous growth (1974-1989). Until 1983, the director of ICCE has been Constantin Bulucea (section 6.3.1). Starting 1974, the institute carried on research contracts. Since 1979 the small-scale production was developed. ICCE contributed to the development of new units, such as: (a) Departament of diodes and transistors from IPRS Băneasa (after 1974), with specialists from the institute and ITT license (Germany); (b) The new factory, Microelectronica, was developed after 1981 based on the Laboratory for Digital Integrated Circuits (Dorel Prisecaru) from ICCE etc. The personnel increased from 150 in 1974 to approximately 1500 in 1989 (Fig. 4.1). Detailed description of the research laboratories, and conclusions about the impact of ICCE activity can be found as a translation in English of the original history of the domain.

Fig. 4.1 Young researchers from ICCE attending a special course about very large- scale integration (VLSI) in electronic circuits, at the Polytechnical Institute of Bucharest (1977).

4.2.3 After December 1989 (1990- 1996). After falling of the communist regime, in 1991, three commercial companies split out of ICCE. None of them survived. The institute was left with about 500 employees. Their number was reduced to about 200 at the end of 1996 (at the time of merging with IMT). Many specialists left for Western countries (mostly for Silicon Valley, California, US). Some of them joined the subsidiaries of foreign companies in Romania (see, for example, section 3.4.1).

4.2.5 The International Semiconductor Conference (CAS). The first edition of this scientific conference took place in 1978, at the initiative of Dr. Constantin Bulucea, Director of ICCE, who implemented from the beginning international standards. It was a vital tool for exchanging experience between university, research and industry. At the beginning was simply the Annual Semiconductor Conference. Since 1991 it is an International Conference. Since 1995, the International Semiconductor Conference becomes an IEEE event. After 1997, the conference was organized by the National Institute for R&D in Microtechnologies (IMT Bucharest).

56 See Chapter 4 in SRMN 2018. A translation in English is available at http://www.link2nano.ro/acad/RSMNE/ 57 See section 4.5.1

Chapter 1_Micro- and nanoelectronics

4.3 National Institute for R&D in Microtechnologies (IMT Bucharest). (Dan Dascălu58) 4.3.1 How the Institute of Microtehnology was founded. Academician Mihai Drăgănescu put forward the idea of founding a research institute taking over the CMOS production line of Microelectronica S.A. (confronted with major economic difficulties) in order to develop microsensors and microsystems. In recent paper59, we are showing how this idea was exploited. We are quoting: A special role in the evolution (1992-1996) of this institute of microtechnology was played by Prof. Doru Dumitru Palade, General Director of the Institute for Precision Mechanics. As the Vice-President of the Consultative College for Research, he chaired (February 1992) a meeting evaluating the domain of microtechnologies. Later on, as Minister of Scientific Research, he provided financing for the already existing CMT (Centre of Microtechnologies, 1991) in order to carry on the research activities on the production line of Microelectronica S.A. He also introduced in the National Plan (1993) the topic of microtechnologies, whereas deciding to transform CMT into an institute (by a decision of the Romanian Government, July 1993), the so-called Institute of Microtechnology (IMT). Finally, he suggested the merging of IMT with ICCE, in order to create (November 1996) the present National Institute of Research and Development in Microtechnologies (IMT Bucharest).

4.3.2 The field of micro-and nanotechnologies in national R&D plan (1993-2013). Correlation with European plans. As shown above, the microtechnologies topic (meaning microsystem technologies) was introduced in the national plan since 1993. It was also maintained in the following plan (called Horizon 2000) and became micro- and nanotechnologies in an extension of Horizon 2000. Since 2001 (Fig. 4.2), Romania financed a special program “New materials, micro- and nanotechnologies” (MATNANTECH), part of the first National Plan for Research, Development and Innovation (PNCDI I). Meantime, Romanian organizations were able to access funding (2003-2006) from European Framework Program (FP 6). Being already familiar with the topic of microsystem technologies, IMT successfully applied for a number of projects. A more generous founding from national sources was available since 2005, with the so-called research of excellence program (CEEX), targeting the generic topics announced for FP 7 (2007-2013). In parallel with FP7 the second national plan (PNCDI II) included the domain micro- and nanotechnologies (correlated with the so-called convergent technologies in FP7). Therefore, the continuous financing of microtechnologies for two decades in Romania was sustaining the continuation of research in microsystem technologies, as a particular domain of microelectronics! The multidisciplinary nature of the domain can be seen from the fact that we have micro electro-mechanical systems (MEMS), micro-opto-electro-mechanical systems (MOEMS) or bio-micro-electro-mechanical systems (BioMEMS). Moreover, nanomedicine was also included in PNCDI II. Therefore, various organizations – and not only IMT - benefitted from financing related to these topics.

Fig. 4.2 A seminar devoted to nanotechnology (2001), preparing the national program MATNANTECH. Aula Magna of the Romanian Academy, in the first row, from left to right, academicians Dan Dascălu, Eugen Simion (President of the Academy), Andrei Țugulea, Mihai Drăgănescu.

4.3.3 Performance in microsystems: first centre of excellence financed by EU (2008 - 2011). The first research centre of excellence financed by European money in Romania, as a new country in EU, belongs to IMT Bucharest. This centre is composed of two laboratories devoted to microwave devices (Dr. Alexandru Müller, section 4.5.10) and photonics (Dr. Dana

58 Detailed presentation can be found in Chapter 6 of SRMN 2018 (op cit). 59 Dan Dascălu „O sămânţă care a rodit“ (in Romanian), Academica, Nr. 5-6, mai-iunie 2017, Anul XXVII, 319-320, pp. 36-38.

Chapter 1_Micro- and nanoelectronics

Cristea60), respectively (both continuing the tradition of ICCE). The European project is MIMOMEMS (acronym for Micro-Electro-Mechanical Systems for Advanced Communication Systems and Sensors)61. Laboratory of Dr. Al. Müller has also been in two integrated projects from FP7, namely SMARTPOWER (2011-2016 – responsible from IMT, Al. Müller) and NANOTEC (2011-2015, responsible IMT, Dan Neculoiu, two STREP projects MEMS-4-MMIC (2008-2012 responsible from IMT, Dan Neculoiu) and NANO RF (2012-2016 responsible from IMT, Mircea Dragoman), three ENIAC projects: SE2A (call 2008), MERCURE (call 2009) and NANOCOM (call 2010) and two ESA projects. Even today, the same laboratory has a substantial participation to European projects62.

4.3.4 The first nanotechnology laboratory in Romania (1996), under the aegis of the Romanian Academy (2002-2017). In the new National R&D Institute for Microtechnologies one can find the Nanotechnology Laboratory (head Dr. Irina Kleps, section 4.5.5), which it seems to be the first of this kind in Romania. Since 2002 this laboratory was affiliated (from the scientific point of view) to the Romanian Academy, being labelled as Centre of Nanotechnologies. Since January 2009 this Centre of Nanotechnology (CNT-IMT) contains three laboratories: the former nanotechnology laboratory, now Nanobiotechnology Laboratory (head, since 2010, Dr. Mihaela Kusko, section 4.5.6); Nanostructuring and Nanocharacterization Laboratory (head Dr. Adrian Dinescu, section 4.5.3, see Fig. 4.3); Molecular Nanobiotechnology Laboratory (head Dr. Radu Cristian Popa63). The multidisciplinary team of CNT-IMT is involved in material and device research targeting bio-medical applications, but also electronics and photonics.

Fig. 4.3 Visit of the President of the Romanian Academy in CNT – IMT (2010). From left to right: Dr. Adrian Dinescu (presenting e-beam lithography), Dr. Mircea Dragoman, Acad. Ionel Haiduc (President of the Academy), Acad. Dan Dascălu (General Director of IMT Bucharest).

4.3.5 First „open facility“ for micro- and nanofabrication in Eastern Europe, IMT-MINAFAB (2009). On 8th of May, 2009, at the Permanent Representation of Romania to the European Union (Brussels), the international launching of the IMT centre for Micro- and NAnoFABrication took place, with the participation of outstanding representatives of the European Commission. Later on, a substantial addition to the experimental infrastructure was provided by CENASIC (section 4.3.7), with the strategic objective of providing a platform for integration of a few Key Enabling Technologies (KET), see also section 4.3.2, illustrated later on by implementing the TGE- PLAT project (3 million of euro) for the benefit of innovative SMEs (section 4.3.8).

4.3.6 Laboratory for multidisciplinary research (details in Chapter 6 of SRMNE). The IMT research laboratories in IMT are grouped in four centres: MIMOMEMS, CNT-IMT, CINTECH (integrating micro-nano- biotechnologies) and CENASIC (carbon-based nanomaterials and nanotechnologies).

60 Dana Cristea graduated the Faculty of Electronics from Bucharest in 1982 and obtained her Ph.D. degree from the same faculty in 1998. She was Scientific Director of IMT (2002-2008). Her laboratory was involved in numerous European projects (WAPITI, FlexPAET, 4M, ASSEMIC etc.). 61 Alexandru Batali “Centru de Excelenţă Europeană în cadrul unui institut de micro- şi nanotehnologii (IMT Bucureşti)“ (in Romanian), Market Watch, nr. 107, July 2008. 62 Alexandra Nicoloiu, Martino Aldrigo, Alexandru Muller “IMT îşi confirmă vocația europeană: 4 noi proiecte câştigate în Horizon 2020 (3 FET-OPEN + 1 ICT)” (in Romanian), Market Watch, Nr.212, March 2019. IMT is participating to three from a total of four FET-OPEN projects Romania is involved (FET – Future and Emerging Technologies). 63 Radu Cristian Popa graduated the Faculty of Electronics from Bucharest in 1989. He obtained his Ph. D. degree (in quantum engineering and systems science) from the University of Tokio (1998). He was working on industrial research projects at the Science Solutions Intn. Lab. Inc., Tokyo (1998-2003), at the University of Tübingen and Neurostar Tübingen (2003-2006). Since 2007 he was with IMT Bucharest, being also Director of one research department (now director of CNT-IMT).

Chapter 1_Micro- and nanoelectronics

4.3.7 Investment in CENASIC (Research Centre for Nanotechnologies Dedicated to Integrated Systems and Carbon-based Advanced Nanomaterials). The new CENASIC centre became operational in November 2015 (a new building with a clean room, technological equipment, testing laboratories). The investment benefitted from structural funding (contract signed as early as September 2010)64. Meantime, the importance of carbon- based nanomaterials was confirmed by the Nobel Prize for Physics (2010) for “revolutionary work on graphene”. Graphene, a monoatomic layer of carbon atoms was, indeed, one of the targets of the CENASIC project. By that time IMT already reported the construction of high-frequency circuits on graphene65. CENASIC is one of the research centres from IMT, being coordinated by Dr. Mircea Dragoman (section 4.5.4). 4.3.8 TGE-PLAT – the platform providing the access of companies to Key Enabling Technologies (KET)66. TGE-PLAT is a 3 million Euro project financed from structural funding (European money), coordinated by Dr. Raluca Muller (section 4.5.11). The budget is devoted to various activities carried on by IMT for the benefit of innovative SMEs, more specifically consultancy, technical and scientific services, research & development, participation to common projects67. This project is based on three KETs, namely micro-nanoelectronics, micro- nanophotonics, nanotechnology. The domain of intelligent specialisation (from the national strategy, 2014- 2020) is IT, space, security.

4.3.9 An outstanding participation to European research programs (the best national institute in 2011). First of all, in FP 6 IMT Bucharest coordinated three support projects involving Romania (ROMNET-ERA), organizations from Eastern Europe (MINAEAST-NET) and from entire European Union (MINOS-EURONET). The last two have been focussed on micro- and nanotechnologies (micro-nanosystems). This activity was beneficial for the visibility of IMT Bucharest. The institute was also involved in other 12 projects from FP 6 (one third of them being networks of excellence). Looking at the statistics, IMT had fewer projects in FP 7 (2007- 2013), but almost all of them have been research projects (not for support or networking). Two of them are large- scale integrating, collaborative projects. We have to add participation to European projects financed by other programs (in parallel with FP7), such as four projects JU ENIAC (Joint Undertaking in Nanoelectronics), a public -private partnership. The remarkable performance of IMT Bucharest was presented recently68. We are quoting: An intermediary evaluation (Report for Innovation, European Commission, 10th of June,2010) placed IMT as…. the most performant national institute in Romania, as far as participation to FP 7 was concerned. At little later the “Digital Agenda” of EC presented IMT, in the same context, as the most performant institute in the field of Science and Technology of Information, revealing also the fact that the focus of IMT was on microsystems. 4.3.10 The International Conference on Semiconductors (CAS) continues its evolution under the aegis of Romanian Academy69. After 1997 (Fig. 4.4), when IMT took over the organisation of CAS (see section 4.2.5), some changes have been done. First the traditional thematic profile (semiconductor devices and integrated circuits) was completed with “micro- and nanotechnologies. On the other hand, benefitting from scientific cooperation in numerous European projects, the foreign participation was increased. Some satellite events cantered on the activity of one or another project (and financed with European money) complemented the usual conference programme.

64 The CENASIC proposal was elaborated by a group coordinated by Dr. Radu Popa (see section 4.3.4) and Dr. Sorin Melinte (section 6.9). The foreseen role of CENASIC was presented in Market Watch (Alexandru Batali, „Nanomateriale bazate pe carbon – noul front high-tech pentru IMT București“ (in Romanian), Market Watch, Numărul 131, Decembrie 2010, interview with acad. Dan Dascălu, General Director of IMT Bucharest). 65 Mircea Dragoman „Circuite de înaltă frecventă realizate pe un singur strat atomic“ (in Romanian), Market Watch, No. 127, July-August 2010. 66 Tehnologii Generice Esentiale (TGE), in Romanian, means Key Enabling Technologies. 67 Dan Dascălu „Lansarea TGE-PLAT, un proiect de exploatere a tehnologiilor generice esenţiale, atrage interesul considerabil al întreprinderilor“ (in Romanian), Market Watch, Nr. 189, Novemberf 2016. 68 Dan Dascălu, Alexandru Müller, Carmen Moldovan, Gabriel Moagar-Poladian „IMT Bucureşti: 10 ani de proiecte europene“ (in Romanian), Market Watch, Nr. 192, March 2017. The key factors of the success of IMT in European programs are presented. Mini-interviews with the researchers involved are also included. 69 Dan Dascălu „Conferința Anuală de Semiconductori (CAS) își sărbătorește, sub egida Academiei Române, a 40-a ediție“ (in Romanian) , Academica, No. 9, September 2017, XXVII, 323, pp. 42-45.

Chapter 1_Micro- and nanoelectronics

Fig. 4.4 Meeting between Acad. Mihai Drăgănescu (left) and Dr. Constantin Bulucea, former Director of ICCE and founder of CAS, at its 20th edition (1997).

In 2013 IMT had a crucial role in the organization of the European Solid-State Device Research Conference (ESSDERC), with a scientific profile similar to CAS. At its 43rd edition, ESSDERC (Chairman Dan Dascălu) was organized for the first time in Eastern Europe, namely in Bucharest, Romania. This conference takes place in parallel with ESSCIRC (European Solid-State Circuits Research Conference). Chairman of the Bucharest edition of ESSCIRC was another Romanian, Andrei Vladimirescu, University of California at Berkeley (section 6.3.3). It is worthwhile to note another specialist of Romanian origin (Sorin Cristoloveanu, ENSERG- IMEP, Grenoble, see section 6.1) was the President of the Steering Committee ESSDERC/ESSCIRC who organized the 2013 edition in Bucharest. This event was strongly supported by Infineon Technologies Romania “70.

4.3.11 The image of IMT Bucharest in the world. For more than two decades, starting in Japan we have each year the international meeting Word MicroMachine Summit (MMS) devoted to MEMS (see above). The participants are from a restricted club of countries or groups of countries (such as the Iberic delegation with Spain and Portugal). This a conference comprising two parts: the first one with country (or regional) reports; the second one – with scientific presentations related to a certain topic71. Since 2007 Romania (represented by IMT Bucharest), was the only participant from Eastern Europe. In 2020, the Summit was planned to take place in Romania, but was delayed for May 2021 due to the pandemic. The organizer is IMT Bucharest.

4.4 Research Laboratory Honeywell Romania (Octavian Buiu72)

The research laboratory Honeywell was set up in 2003, as part of Honeywell Romania SRL. The two personalities involved directly in the occurrence of this unit have been Cleopatra Căbuz73 and Cornel Cobianu74.This action was part of a certain period of development of Honeywell, starting with the nomination (February 2002) of David M. Cote as Executive Director and President of the Board, ending in April 2016. The unit in Bucharest was part of the Global Honeywell Laboratory called „Sensors and Wireless “. The other locations have been in Minneapolis, Prague and Nanjing (later on - Shanghai). The mission of this Laboratory was to develop a research and innovation capability in order to expand the Honeywell portfolio in materials, devices and systems related to sensors, intelligent equipment for protection and monitorization of complex industrial processes, as well generation of green energy and environment monitoring. The first step was to attract experienced engineers in electronic devices (such as Ioan Pavelescu, Ion Georgescu, Mihai Mihăila, Viorel Avramescu from IMT). Later

70 Dan Dascălu „Premieră estică: România a organizat Conferinţa internaţională de nanoelectronică ESSDERC/ESSCIRC“, Market Watch, Nr. 159, October-November 2013. 71 At the beginning the content was related to micromachining or microstructuring (i. e. microtechnologies). Then the content evolved toward micro- and nanotechnologies and micro- and nanosystems. For example, the 2017 edition was World Smart Systems and Micromachine Summit, with the main topic Micro- and Nano systems for Smart Cities Applications. 72 He graduated the Faculty of Physics , at the University of Bucharest (1987) and obtained his Ph.D. Degree at the Faculty of Physics from Babeș-Bolyai University (Cluj-Napoca, Romania). He was scientific director of CMT(IMT) and the researcher and lecturer at the University of Liverpool (U.K.), and then rearcher with various management responsibilities at the Honeywell Laboratory in Bucharest. 73 She was Vicepresident for Engineering, Honeywell Industrial Safety, member of the National Academy of Engineering (USA), https://www.linkedin.com/in/cleocabuz/ 74 Honeywell Fellow, Senior Researcher 1st degree, Member of the Academy of Romanian Scientists, https://www.linkedin.com/in/cornel-cobianu-9664967/ (see section 4.5.2).

Chapter 1_Micro- and nanoelectronics

on, the laboratory in Bucharest diversified its offer and attracted Romanian researchers from all over the world (USA, Canada, Australia, U.K., France, Germany). More than 100 US and EU patents have been generated by the group in Bucharest so far. We are also mentioning: (a) participation to three European projects; (b) winning in 2009 of two projects from structural funding (VIPRES, NOVOCELL); (c) Implementation (2010), of a so- called „Master Service Agreement “, allowing the access to the technological facilities of IMT Bucharest.

4.5 Biographical notes75

4.5.1 Marius Bâzu (Fig. 4.5). He was born in1948 and graduated in 1971 the Faculty of Electronics from Bucharest, obtaining his Ph. D. from the same Faculty in 1994. He was promoting or elaborating in Romania methods for reliability evaluation. He was leading the Reliability Laboratory in IMT Bucharest until his retirement (2016), coordinating various projects financed from national and international. Programs. He received in 2011 the “Tudor Tănăsescu” Award of the Romanian Academy. He published 3 books76 and two book chapters77 published (co-author, with Titu Băjenescu), in prestigious publishing houses abroad and 2 books in Romania. He is also author of scientific papers (IEEE Trans. on Reliability, Solid State Phenomena, Sensors etc.), as well as national patents (2007-2014).

Fig. 4.6 Dr. Cornel Cobianu Fig. 4.7 Dr. (Physics) Adrian Dinescu

Fig, 4.5 Dr. Marius Bâzu

Fig 4.8 Dr. Mircea Dragoman

4.5.2 Cornel Cobianu (Fig. 4.6) graduated (1977) Faculty of Electronics from Bucharest. He was employed by Microelectronica, after a short stage at IPRS (1977-1980). He developed and implemented a production process described by an accurate physical-chemical modelling published and quoted for times78. He also promoted a technology of fabricating dielectric structures interpoli, published79, and quoted 52 times. He received (1991) „Tudor Tănăsescu “Award of the Romanian Academy. Dr. Cobianu was the first Scientific Director of CMT, later on IMT (1991-1994). In 1993, Dr. Cobianu of the first European research project of IMT („PORSIS“, 1995- 1998), getting the first integrated gas sensor with a SnO2 sensitive layer, processed with a sol-gel technology. The

75 The biographical notes of some researchers in the organization mentioned above are presented here in alphabetical order. For Radu Bârsan, Constantin Bulucea, Mircea Dușa, Radu Vancu, Andrei Vladimirescu) see section 6 of this chapter. In all cases you can find extebded information in SMNE 2018 (op cited). 76 a) M. Bâzu, T. Băjenescu, Failure analysis. A practical guide for manufacturers of electronic components and systems, J. Wiley & Sons, 2011, ISBN 978-0-470-74824-4; b) T. Băjenescu, M. Bâzu, Component reliability for electronic systems, Artech House, 2010, ISBN-10: 1-59693-436-0; c) T. Băjenescu, M. Bâzu, The reliability of electronic components, Springer Verlag, 1999, ISBN 3-540-65722-3. 77 a) M. Bâzu, T. Băjenescu, Chapters „Reliability Testing“ and „Failure Analysis“ in: Thomas, Siturel, Thomas (Eds.), Micro- and Nanostructured Epoxy/Rubber Blends (3-527-33334-7), September 2014, J. Wiley & Sons; b) T. Băjenescu, M. Bâzu, Chapter „Reliability Building of Discrete Electronic Components“, in: Jonathan Swingler, Reliability Characterisation of Electrical and Electronic Systems (ISBN 978-1-782412-221-1), 2015, Elsevier Ltd.. 78 Cornel Cobianu, Cristian Pavelescu, „A theoretical Study- of The Low Temperature Chemical Vapor Deposition of Silicon Dioxide“, în Journal of the Electrochemical Society, 130 1988 (1983). 79 Cornel Cobianu, Ovidu Popa, Dan Dascălu „On the Electrical Conduction in the Interpolysilicon Structures“, în IEEE „Electron Devices Letters“, 14, 213 (1993).

Chapter 1_Micro- and nanoelectronics

result (as demonstrator) was reported in a paper quoted (until 2017) 62 times80. He was an invited researcher and professor (2000-2003) of the University of Twente (the Netherlands). Dr. Cobianu was also (2003-2017) with Honeywell Laboratory in Bucharest (section 4.3), as Senior Technology Manager (until 2010) and later as „Chief Scientist“. He has over 50 patents granted in USA, Europe, Canada and China81. From 2017, Dr. Cobianu is again with IMT Bucharest, working in advanced research for carbonic nanomaterials.

4.5.3 Miron Adrian Dinescu (Fig 4.7) graduated (1993) the Faculty of Physics at the University of Bucharest and obtained the Ph. D. degree at the same Faculty in 2010. He was with Optoelectronics Laboratory in ICCE (1993-1996) and since 1997 with the Laboratory of Simulation and Microphysical Characterization in IMT Bucharest, specializing himself in Atomic Force Microscopy (AFM). Since 1999 he became the head of the above laboratory, later transformed in the Laboratory of Micro- and Nanostructuring and Characterization. Since 2005 he was in charge with the implementation of e-beam lithography, upgrading the techniques of structuring and characterization of his laboratory. As Technical Director of IMT-Bucharest (2014-2017), he was in charge of the team implementing the investment in the new CENASIC centre (section 4.3.7). Since January 2017, Dr. Dinescu is the General Manager of the institute. He is co-author of over 100 papers in ISI Journals. He was project manager for 15 national and 3 international projects.

4.5.4 Mircea Dragoman (Fig. 4.8) graduated The Faculty of Electronics in Bucharest (1980) and has the Ph. D. from the same Faculty since 1991. Dr. Dragoman (see https://sites.google.com/site/mirdragoman/) is a researcher at IMT Bucharest. He had a Humboldt grant (1991-1994) in Germany and Italy. He published 147 papers (on nanoelectronics, microwaves, MEMS, nanomaterials) in ISI journals and is co-author of 7 books published by Springer and Artech House (USA)82. Dr. Mircea Dragoman designed and implemented a number of RF MEMS (in microwaves and millimetre waves). In 2007 he was developing for the first time in Romania wafer probing up to 65 GHz. Dr. Dragoman was realizing for the first time in the world high frequency nanoelectronic devices based on monoatomic layer materials. In 2016 he was realizing first transistor with ballistic transport at room temperature and first quantum gates for quantum computing at room temperature, both based on graphene. In 2017, Dr. Dragoman achieves first phasing delay circuits and antennas for 5G communications based on ferroelectrics from HfO2, having a thickness of a few atomic layers. He is a member of the Nanotechnology Council, with H index 27 (Google citations). Dr. Dragoman received the „Gh. Cartianu “Award of the Romanian Academy (1999).

4.5.5 Irina Klepș (Fig. 4.9) graduated (1973) the Faculty of the Industrial Chemistry from the Polytechnic Institute of Bucharest, receiving the Ph. D. degree from the same Faculty in 1998. Since 1973 he was working in the Laboratory for Semiconductor Device Technology in ICCE. She contributed to the set-up of the Nanotechnology Laboratory in IMT, in 1996 and she was the head of this Laboratory until her retirement (in 2010). Since 2002 this Laboratory was placed under the aegis of the Romanian Academy. She had specialization grants abroad, in Italy, Spain, Greece and Germany. She initiated in IMT the utilization of nanostructured silicon in optoelectronics (the European project INCO-COPERNICUS,1998-2000), as well as realization of thin diamond

80 Cornel Cobianu, Cristian Savaniu, Pietro Siciliano, Simonetta Capone, Mikko Utriainen, Lauri Niinisto, „SnO2 Sol-Gel Derived Thin Films For Integrated Gas Sensors“, în Sensors and Actuators B 77, (2001), p. 496-502). 81 C. Cobianu, S.R. Shiffer, B.C. Serban, A.D. Bradley, M. Mihailă, „Pressure Sensor“, US Patent 7,318,351 2008; C. Cobianu, I. Georgescu, J.D. Cook, V. Avramescu „Multifunctional multichip system for wireless sensing“, US Patent 7,391,325, 2008; I. Pavelescu, I. Georgescu, D.E. Guran, C. Cobianu „Integrated MEMS 3D multi-sensor“, US Patent 7,784,344, 2010. 82 D. Dragoman, M. Dragoman „Advanced Optoelectronic Devices“, Springer, 421 pages (1999) D. Dragoman, M. Dragoman; „Optical Characterization of Solids“, Springer, 450 pages (2002); D. Dragoman, M. Dragoman „Quantum Classical Analogies“, Springer, 400 pages (2004); M. Dragoman, D. Dragoman – Nanoelectronics. Principles and Devices, Artech House, Boston, USA (2006), 1st edition, 420 pages, (2006); M. Dragoman, D. Dragoman – Nanoelectronics. Principles and Devices, Artech House, Boston, USA (2009), 2nd edition, 500 pages, (2009); D. Dragoman, M. Dragoman, Bionanoelectronics, Springer 2012, 350 pages, D. Dragoman and M. Dragoman, Sheng Wu Na Mi Dian Zi Xu Bionanolectronics, Chinesse Edition, Science Press, 2015; M. Dragoman and D. Dragoman, 2D Nanoelectronics, Physics and Devices of Atomically Thin Materials, Springer, 2017.

Chapter 1_Micro- and nanoelectronics

and carbon-based silicon compounds with applications as field emitters83. She published a chapter devoted to ultramicro/nanoelectrodes in Encyclopaedia of Nanoscience and Nanotechnology (American Sci. Publishers)84. She was in charge with 7 international projects (NATO, FP3-FP7), 10 bilateral projects of cooperation (with Italy, Spain, Greece, France) and 10 national projects.

Fig. 4. 9 Dr. Irina Klepș

Fig. 4.10 Dr. (Phys) Mihaela Kusko Fig. 4.12 Dr. Gabriel Moagăr-Poladian Fig. 4.11 Dr. Mihai Mihăilă, corresponding Member of Academy

4.5.6 Mihaela Kusko (Fig. 4.10) graduated (1998) the Faculty of Physics at the University of Bucharest and obtained her Ph. D. degree from the same Faculty. Since 1998 she is with the Laboratory of Nanotechnology from IMT Bucharest. In 2003 she was winning a project for the realization of a silicon device for controlled release of medicines (DeSiRe, PNI, 2003-2005). In 2007 she succeeded with another two national projects devoted to the study of new nanocomposites on silicon (PNII-IDEI), respectively to construction of a combustion cell (methanol/ethanol) for portable electronic instrumentation (PNII-Partnership). She is representing IMT in 2 European projects devoted to nanotoxicology: FP7-IP NanoValid (2011-2015) and LIFE+ iNanoTool (2012- 2015). She has 45 papers in ISI journals, cumulating over citations (Web of Science), 4 invited papers and 2 patents. Since 2010 she is coordinating the Laboratory of Nanotechnology, oriented towards materials and devices for bio-medical applications and environment control.

4.5.7 Mihai Mihăilă (Fig. 4.11) graduated the faculty of Electronics from Bucharest in 1971, and obtained the Ph. D. from the same Faculty in 1997. He is also corresponding member of the Romanian Academy. He was with ICCE (1971-1996) and IMT (1996-2003). From 2003 to 2015 he was employed by Honeywell as principal senior researcher (in Advanced Technology Centre until 2005 and then with Sensors and Wireless Laboratory until 2015). Since 2015, he is back in IMT Bucharest. Dr. Mihăilă discovered the mechanisms of phonon excitation in the 1/f noise and identified the microscopic source of this 1/f noise as the thermal vibration of surface and bulk atoms85. He suggested a new spectroscopical method (the 1/f noise spectroscopy), for determining the thermal

83 Study of porous silicon, silicon carbide and DLC coated field emitters for pressure sensor application, I. Klepş et al, SOLID- STATE ELECTRONICS Volume: 45 Issue: 6 Pages: 997-1001 Published: JUN 2001. 84 Electrochemical nanoelectrodes, I. Klepş, in Encyclopedia of Nanoscience and Nanotechnology, H.S. Nalwa, (Ed.), American Scientific Publishers, 793- 817, 2004. 85 a) M. Mihăilă, „Phonon observations from 1/f noise measurements“, Physics Letters 104A, 1984, pp. 157-158; b) M. Mihăilă, „Phonon fine structure in the 1/f noise of metal, semiconductors and semiconductor devices“, in Noise in Oscillators and Algebraic Randomness, Lecture Notes in Physics, edited by M. Planat, Springer Verlag, 2000, pp. 216-231; c) M.

Chapter 1_Micro- and nanoelectronics

energy of vibration for atoms and molecules, including the energy of a single molecule86. He patented, developed and applied this method for nanomaterials characterization and molecular recognition. In 2014, he established a connection between the response of metallic oxides to various molecules and the vibration energies of atoms and molecules. He has more than 125 published and presented at conferences (Solid-State Electronics, Physics Letters, Fluctuations and Noise Letters, Electrochemical Acta, RCS Advances etc.), 20 patents in USA (with another 23 under evaluation), 8 in EU, as well as another patents in Japan, China, India and Romania. Dr. Mihăilă received the „Dragomir Hurmuzescu“ Award of the Romanian Academy (1985).

4.5.8 Gabriel Moagăr-Poladian (Fig. 4.12) graduated the Faculty of Technological Physics at the Bucharest University in 1990 and obtained the Ph.D. in Physics at the same University in 1999. He was with the Institute of Optoelectronics between 1990 and 1992 (working in sensors for far infrared for thermovision), and with Biotehnos S.A. between 1992 and 1994. Since 1994 he was with ICCE, then with IMT. Currently, Dr. Moagăr-Poladian is interested in 3D printing of integrated circuits, microsensors, micro- and nanostructures, Scanning Probe Microscopy (SPM) lithography. He introduced 3D printing in IMT. He was also in charge of two European projects financed by ECSEL and devoted to electrical automotive vehicles. Dr. Moagăr-Poladian has 20 patents in Romania and 2 international patents. He invented and realized experimentally an optical neuron for optical computers, mentioned (2000) by Inside R&D, John Wiley & Sons87. He also conceived and demonstrated a torque sensor (linear and redundant) for electrical vehicles. Dr. Moagăr-Poladian is the inventor of a new method of micro- and nano-scale 3D printing using a fountain-pen optically assisted nanolithography (European patent, used in 3D photonics and Lab-on-Chip), as well as of a new 3D printing at macro scale, using a focussed beam of ultrasounds (European patent).

4.5.9 Carmen Moldovan (Fig. 4.13) graduated in 1983 the Faculty of Electronics from Bucharest and in 2002 obtained the Ph. D. degree from the same Faculty. She was (1984-1996) a process engineer for photolithography and masks on the MOS fabrication line (Microelectronica and IMT). Since 1996 she is a laboratory head in IMT Bucharest (today the Laboratory of Microsystems for Bio-medical and Environmental Applications). She is active in the following domains: a) resonant sensors, accelerometers, microarrays, ISFET sensors, biosensors, microsystems for biomedical and environmental applications; b) application platforms for pesticide detection, early detection of heart attack, detection and miniaturization of metabolic syndrome; c) MEMS and NEMS technologies. Dr. Carmen Moldovan was also Technical Director (2002-2008) of IMT Bucharest, director or contact person for 20 national projects (PNII, PN III, ROSA –STAR etc) and 15 European projects (in FP6, FP7, ERANET, Eureka). She has 120 papers in ISI journals, book chapters and papers presented at international conferences, 7 patents, 655 citations. She was one of the 25 experts of the working group ISTAG (an IST Advisory Group) of the European Commission (2011-2013), in charge with the preparation of Horizon 2020; she is also a member of NEXUS Steering Committee, as well as IEEE Senior Member.

4.5.10. Alexandru Müller (Fig. 4.14) graduated the Faculty of Physics, at the University of Bucharest (1972). He received the Ph. D. degree at the same Faculty in 1990. He started its activity at ICCE and then continued (since 1996) at IMT Bucharest. In 2017 he was abilitated as doctoral supervisor at the Faculty of Electronics, Communications and Information Technology (University „Politehnica” of Bucharest). Dr. Müller designed and realized in ICCE microwave semiconductor devices on silicon and GaAs. He established an original model for switching of thin base pin diodes, with practical results in maximising stored charge (and efficiency)88. Since 1996 he is the head of the Laboratory of Micromachined Structures, Devices and Circuits for Microwave Applications from IMT Bucharest. Dr. Müller fabricated the first passive circuits elements for microwaves on a dielectric

Mihăilă, „Low-frequency noise in nanomaterials and nanostructures“, in Noise and Fluctuations Control in Electronic Devices, edited by A. Balandin, American Scientific Publishers, 2002, pp. 367–385. 86 a) M. Mihăilă, „System of phonon spectroscopy“, US 7612551 B2 patent, Nov. 3, 2009; b) M. Mihăilă, „Correlations phonon spectrum-sensitivity in metal-oxide gas sensors“, Procedia Engineering 87, 2014, pp. 1609–1612. 87 H. Goldstein „New Structure Proposed For All-Optical Neurons“, Inside R&D vol. 29 no. 13 p. 2, March 29, 2000. 88 A. Müller, S. Voinigescu, „Heavy Doping Effects on the I-V and Stored Charge Characteristics of Narrow Base PIN Diodes“, Solid State Electronics 1989, 32, 8, pp. 593-601; S. Voinigescu, A. Müller, et. al., „Auger Recombination în Heavily-Doped p+ Silicon“ Solid State Phenomena, 1989, 6, pp. 315-322.

Chapter 1_Micro- and nanoelectronics

membrane obtained on micromachined silicon. This is a European priority of the IMT laboratory89, leading (1997) to the successful proposal in the European FP4 „Micromachined Circuits for Microwave and Millimetre Wave Applications“ MEMSWAVE (1998-2001), nominated later for the Descartes Award (the best European scientific project of cooperation). He was coordinated MIMOMEMS project (European centre if excellence, section 4.3.3) and other numerous European projects in FP 6, FP 7, Horizon 2020, as well as national projects.

Fig. 4.13 Dr. Carmen Moldova

Fig. 4.14. Fig. 4.15 Dr. Raluca Müller Dr. (Phys) Alexandru Müller

Dr. Müller has more than 50 papers in specialized journals, as well as book chapters published by Springer, Francis & Taylor, Publishing House of the Romanian Academy. He was co-editor for 13 volumes published by the Romanian Academy and received the “Tudor Tănăsescu” Award (2002) of the Romanian Academy.

4.5.11 Raluca Müller (Fig. 4.15) graduated (1978) the Faculty of Electronics from Bucharest, and received the Ph. D. degree from the same Faculty (2000). She was with ICCE (1978- 1994) within the Laboratory of Discrete Devices and Laboratory of Microwaves, respectively. Since 1994 she was with IMT and from 2002 she is in charge of the Laboratory for Computer-Aided Simulation, Modelling, and Design. She designed and realized components for integrated silicon optics; she also realized and characterized MEMS: microcantilevers, membranes, micromanipulators; she designed and implemented integrated microsensors with optical detection (pressure sensors, chemical sensors, biosensors), microfluidic sensors. Therefore, Dr Raluca Müller had significant contributions in developing technologies for MEMS and optical sensors. Her laboratory provides services for the entire institute, and also developed rapid prototyping techniques, microtransducers for MOEMS and MEMS, and developed research related to new materials (thin films and nanostructures from oxidic semiconductors).

R. Müller was Director of Department (2002-2009) and since 2009 she is the Scientific Director of IMT Bucharest. In the time period 2011-2017 Dr. Raluca Müller was also the General Director of IMT-Bucharest. Since 2003 is a member of the Scientific Council of IMT. She is coordinating the TGE-PLAT (section 4.3.8), was in charge of the participation of IMT in various FP 6 and FP 7 projects. She coordinated numerous scientific projects with national funding, including networks pioneering research work in micro- and nanotechnologies. Dr. R. Müller has over 150 papers (published in journals or presented at scientific conferences). The topics of papers published in Journal of Micromechanical and Microengineering 1997; Sensors & Actuators 1999, 2011; Journal of Luminescence 2006; Sensor Letters 2008; Thin Solid Films 2009; Analog Integrated Circuits and Signal Processing 2014, 2015; Microsystem Technologies 2016; Journal of Nanoscience and Nanotechnology 2016, are mainly connected with MEMS, integrated optical sensors, electro-thermal actuators for micro-manipulation.

89 A. Müller, et. al, „Dielectric membrane support“ European Semiconductor, 1997, 11, 9, pp. 27-28; A. Müller et. al, „Dielectric and semiconductor membranes as support for lumped elements and coplanar waveguides“, Proc. MME ’97, Southampton, UK, pp. 59-62.

Chapter 1_Micro- and nanoelectronics

5.The evolution of the Romanian school of nuclear electronics90 (Gheorghe Pascovici)

5.1 Introduction

Nuclear Electronics is undoubtedly part of the infrastructure of the atomic and nuclear physics, plasma physics and radiation and many of their applications. Born at the beginning of the twentieth century, nuclear electronics has played a decisive role in the scientific development in general in the entire twentieth century and will continue to do so in the future. Nuclear electronics comprises primarily problems related to radiation detection, the development of related measurement methods and the development of the electronic instruments to carry out these measurements. With the impetuous development of experimental nuclear physics in the mid-1950s, primarily in nuclear research institutes or laboratories, but especially within CERN (the European Nuclear Research Centre, set up in 1954), a multitude of nuclear radiation detectors have been researched and developed.

The processing part of the information from nuclear radiation detectors, whether in analogue or digital form, comprises two distinct parts: a) The first, intimately coupled with the nuclear radiation detector, is the part that optimally converts the signals from the detector (either load, current, voltage or electromagnetic induction) and usually turns them into standard electrical voltage signals, which can be transmitted to the next stages (analogue processors – filter-amplifiers, time or amplitude conditioning). Nuclear electronics in the 1960s and 1990s defined this chapter as part of "front-end electronics" (FEE). This specific part of nuclear electronics has varied significantly over the years in its structure and composition. b) The second part included, initially, digital analogue converters, followed by temporary or permanent storage and pre-processing of the information. Here, the methods of information processing are borrowed from the fields of telecommunication electronics (analysis, pulse shape processing, impulse transmission, etc.) as well as from various computing techniques and specific informatics technologies.

Over the years, there have been several trends in the evolution of electronic architectures; a first effort and success, initiated by major US national laboratories in the early 1960s, was the modularization and then standardization of interface electronics, placed near nuclear radiation detectors. A big step forward was imposed by NIM (Nuclear Instrument Module) standard defined and developed in the experimental nuclear physics communities of the above-mentioned laboratories. The NIM standard was rapidly followed by the CAMAC standard (Computer- Aided Measurement and Control), in particular through its own parallel communication bus structure known as "Dataway Bus" (24 bits)…and, shortly due to FASTBUS modular system (IEEE 960 standard) appeared, the data processing speed increased significantly and the noise induced by digital switching transitions was reduced considerable. The beginning of the '90s can be considered as a turning point for nuclear electronics, at which time the NIM and CAMAC modular systems are losing their importance and utility. In the early 1990s, the CAMAC modular system was declared "obsolete", while the modular NIM system continued to survive, but with minor functions, rather than significant analog processing, even the VME system is no longer recommended for new developments, but there are of course other much better performing modular systems, both in terms of communication speed and multiple synchronization possibilities.

It is important to note that the FEE component structure has changed substantially, the analog-to-digital, pipe-line ultra-fast converters along with modern FPGA. The Field-Programmable Gate Array (FPGA) and Digital Signal Processing (DSP) are part of the FEE, which increased significantly the power of the direct digital Pulse Shape Analysis (PSA) of the preamplifier signals, in real time, as well as the power of the pre-processing units. This migration was caused by the structural and complexity changes of detector assemblies developed and installed at

90 Human resources for the semiconductor industry (microelectronics) and nuclear electronics can be seen - historically, speaking - as two branches starting from the same stem. We are referring, of course, to the section of physical engineers of the Faculty of Electronics and Telecommunications of the Polytechnic of Bucharest. On the other hand, as an avant-garde technology, the development of nuclear electronics was eager to have access to the latest types of electronic components and systems, from computers with electronic tubes, to specialized integrated circuits (ASIC, Application Specific Integrated Circuits). Looking to the future, we hope that the micro- and nanotechnologies available on the Băneasa platform (at IMT Bucharest) will be really applied for the experimental structures (targets) that will be used at the ELI - NP (Extreme Light Infrastructure - Nuclear Physics) experiments, on the Măgurele platform (Dan Dascălu).

Chapter 1_Micro- and nanoelectronics

the large particle accelerators. If previous radiation detectors mostly demanded only accurate measurements of energy and time, modern detectors, due to their complex structure and segmentation increased the number of channels spectrometric by 1-3 orders of magnitude

The implementation of ASIC (Application-Specific Integrated Circuit) as specialized integrated circuits, developed exclusively for a specific application, was found as a potential solution. In this way, most of the functions specific to the FEE stage of the nuclear electronics interface with the radiation detector, namely the voltage, current or even the charge sensitive preamplifiers, but also the next stages of analogue processing, for example the filter amplifiers in the frequency domain, non-linear processing of the pulse shape, or even the specific to extract the timing information (CFD - Constant Fraction Discriminator), and other specific functions are implemented in ASIC structures.

5.2 Nuclear electronics in Romania, short history 91

Nuclear electronics was born in Romania also in the 1950s and has deep roots in the structure and objectives of the Institute of Atomic Physics (IFA). The path and the evolution of nuclear electronics has largely followed the same course with nuclear electronics in major research centre’s in the world, certainly correlated with the possibilities and capabilities of the national economy. The electronics department has been coordinated, since the early 1950s, directly by Prof. T. Tanasescu, a genuinely visionary professor and the unquestionable father of electronics in Romania.The course and evolution of nuclear electronics has largely followed the same path as nuclear electronics in major research centers around the world and is presented in extenso in [2]. The main effort undertaken was to manage Romania’s membership to CERN (European Centre for Nuclear Research). Although we achieved a first important step by signing the Framework Agreement for the participation of Romania's economy at CERN even in 1991 and a Scientific Co-operation Agreement between IFA and CERN, Romania's full accession to CERN was completed only in 2016! Without commenting on this historic delay, let us look on the bright side, and simply state that it is great that we finally fully joined CERN. Disregarding the difficulties inherent in any similar start, and all impediments related to the fact that Romania was not yet a member of CERN, our determination to participate effectively in CERN was extraordinarily high, so that in a short time we managed to participate in a diverse range of projects. We actively participated in experiments and experimental data processing, and we also contributed with hardware items to many of CERN's large experimental arrangements, these being the so-called "in-kind" contributions that were requested and highly appreciated within CERN. In this area, we succeeded in engaging the national industry, despite all the difficulties of the national economy, which traversed a rather difficult transition phase.

The CERN-Geneva Scientific Cooperation Agreements between CERN-Geneva and IFA/IFIN-HH and between GSI-FAIR (Germany) and IFA/IFIN-HH were used as an organizational framework, based on which several specific group and individual collaborations were initiated, Among them I would like to mention at least two of them, with a significant contribution: The first such collaboration included developments of EEE detector and electronics subassemblies for TRD for the ALICE-CERN experimental arrangement. The Hadronic Physics Department-DFH (Mihai Petrovici) was formed around a Centre of Excellence, a status won by national competition, more than ten years ago and. He was recently stating, that: “In the frame of ALICE collaboration, we had the honour to receive a unique task, namely, to contribute to the 20% achievement of one of the most important subdetectors of the ALICE experimental arrangement, called TRD. At the end of 2003, the laboratory's infrastructure was completed, in the summer of 2004, the first TRD prototypes were produced in our laboratory. In October 2005, we completed our detector laboratories, and so the last component of the TRD subdetector was finished in November 2008." Another special development was the application-specific integrated circuit (ASIC) which was customized for a particular use, namely, as front-end electronic (FEE) for TDR detector. The analogue ASIC integrated circuit for these chambers was developed with the essential contribution of Vasile Cătănescu from the DFH Department of IFIN-HH. In total, four ASIC microcircuits were developed for the FEE part of the TRD (Transient Radiation Detector) detector of the ALICE complex experimental arrangement. The ASIC circuits, designed, finalized, tested and fully characterized by IFIN-DFH, were highly appreciated in the above- mentioned collaboration.

91 A fairly detailed history is available at http://www.link2nano.ro/acad/RSMNE/

Chapter 1_Micro- and nanoelectronics

In the department of elementary particle physics and information technologies from IFIN-HH, Călin Alexa, as representative of Romania in the largest experimental cluster, ATLAS at CERN succeeded in organizing the R&D of the FEEs for new types of detectors, developed in the frame of RD-51 and NA-62 experiments. In the frame of RD-51 collaboration, Sorin Martoiu developed a scalable readout system (SRS). With such scalable architecture, one can get many Gbps, in a point-to-point addressing, without applying to any real bus structure, and for the NA-62 collaboration, a special ASIC has been developed with a particularly good timing and spatial resolution, of less than 150ps /pixel (rms), and of 300 μm /pixel, respectively.

In the frame of the scientific collaboration with the University of Cologne, we have developed a set of FEE circuits, dedicated to large detector arrays in Europe, for both gamma and charged particles spectrometry, respectively. Just to mention the FEE for the first set with segmented and encapsulated High Purity (HP)-Ge detectors for the MINIBALL Array which was a worldwide premiere (installed at CERN - REX ISOLDE, where it has been operating uninterruptedly since 1998) or the FEE for segmented Si detectors in the LYCCA FAIR / NUSTAR multi-detector assembly (GSI-Darmstadt-Germany and a fundamentally new solution for the FEE for the AGATA experimental assembly (central electrode). With his solution, based on two modes of operations, each with two distinct measuring ranges, i.e. a standard pulse height (0-20MeV) and an accurate TOT (Time over Threshold)(20-180 MeV,) thus achieving, for the first time worldwide, a dynamic measuring range of almost 100 dB, respectively, from 0.1 fC up to ~10 pC the input charge dynamic range (which is equivalent to ~ 2 keV at 180 MeV incident gamma ray energy dynamic range). The intrinsic energy resolution of ~ 600 eV (with cooled JFET) and 900 eV (room temperature JFET) for the central electrode AC coupled, the detector having an equivalent capacity of ~ 47pF.

The explosion of new types of nuclear radiation detectors developed in many of the major nuclear research centers as CERN, GSI (FAIR), HERA, Fermi Lab, NSCL-Michigan, GANIL-Caen, or the hundreds of AMS centers and accelerators worldwide, has and continues to impose impressive developments in the FEE interface electronics, namely in the electronics part located between the radiation detectors and the standard electronics of signal processing and the related complex computer network.

FEE specific chip development technologies are accessible to a wider spectrum of specialists, not necessarily specialists in electronics, but also physicists, computer scientists, mathematicians and others from the wider field of natural sciences! However, the majority of those who developed such structures are specialists in electronics, either industrial electronics or more narrowly specialized in electronics and/or solid body physics, applied electronics or in one word “engineers for physics". Perhaps a more effective solution is that of interdisciplinary specializations, within some institutes that have a structure located on the border between physics and electronics. The undisputed success of the Romanian FEE school during the period 1990-2015 was due to this type of organization and orientation of the professional activity, throughout Europe. A special mention is warranted for the developments of FEE made by V. Cătănescu, M. Petcu, H. Bozdog, M. Ciobanu, S. Martoiu, G. Caragheorgheopol and G. Pascovici; although they all have the basic electronics specialty, applied electronics, telecommunication or "engineer-physicists" acquired at UPB (Polytechnical University -Bucharest), most of the FEE professional developments were made in international collaborations at the large scientific research centers in the field of nuclear physics in Europe such as CERN, GSI-Darmstadt, KFZ-Karlsruhe, INFN-Italy, IN2P3- France or University of Cologne. Undoubtedly, the entire ELI and ELI-NP consortium will offer new basic research directions as well as technological research, extremely attractive and stimulating for generations to come.

5.3 Gheorghe Pascovici Fig. 5.1 Dr. Gheorghe Pascovici Date / Place of birth: 16 Mai 1943, Braşov Education • Faculty of Electronics and Telecommunications, University Polytechnic Bucharest, Department of Engineering for Physics, graduated 1965 promotion • PhD in Nuclear Electronics, (IFA, 1976) Research experience: • Full front-end electronics development for the first set of HP-Ge Encapsulated and Segmented Detectors with direct digital signal

Chapter 1_Micro- and nanoelectronics

processing in the Digital Gamma-Finder (DGF-4C Rev.C-E- XIA- LLC) (developed for the MINIBALL-array of detectors, at the CERN-REX ISOLDE acceleration complex); • The development of the Time-over-Threshold (ToT) method in high resolution spectrometry, in combinations of FEEs with multiple gain (e.g. AGATA- "Dual Gain Core Preamplifier with Built-in Active-Reset Device -ToT" ); • Directly contributing to the development of "The mirror pair centroid difference method", a method of improving the intrinsic temporal resolution in ps domain and its generalization as “The generalized centroid difference method for pico-seconds sensitive determination of lifetimes “; • Developing methods for measuring and characterization of highly segmented HP- Ge detectors (space load, impurities, mobilities etc.); • Development of new beam detectors for accelerated particle beam (HISPEC / DESPEC-FAIR) for transparent spatial, temporal detection, emittance measurement, etc. ; • Development of the Time-of-Flight method at the AMS accelerator (6.5MeV) of the AMS-Cologne National Research Center (Germany); • Extending the "sliding scale" method applied to pulse height ADC converters, allowing Multiple Application of Sliding Scale Correction per pulse; with direct application to the multichannel analyzers, in high resolution nuclear spectroscopy with considerable improvement of their differential non-linearity; • Development of a new experimental method for highly accurate measurement of Larmor precession: "Phase-sensitive spectroscopic resonance method"; • Development of amplitude-time biparametric acquisition methods, in us and ns temporal domains; Development of experimental methods for pulsed particle beams, accelerated at Cyclotron and Tandem FN accelerators Publications and Presentations. Over 120 scientific publications in peer-reviewed journals. Over 30 invited presentations and / or lessons Europe, USA, China, South Korea, etc. Managerial experience in scientific research - • 1982-1986 - Deputy Head of Physics of Heavy Ion Department, IFIN; • 1986-1989 - Technical Director, (IFIN)-Institute of Physics and Nuclear Engineering; • 1989-1993 - IFA General Director (ranked as a Secretary of State, Member of the Provisional Government, 1990); • 1995-2012 - Head of the nuclear electronics team of the Institute for Nuclear Physics at the University of Cologne, Germany.

6. Romanian specialists from diaspora

We are presenting here brief biographical notes of outstanding Romanian specialists from diaspora. One can find more detailed information in Chapters 4, 5 and 9 al SRMN 2018 (op. cit.) and in the English version of this volume (excerpts can be found on http://www.link2nano.ro/acad/RSMNE/).

6.1 Man of the year 2017 in microelectronics: Sorin Cristoloveanu Born in 1949, Sorin Cristoloveanu (Fig. 6.1) was educated in the high-school „Gheorghe Lazăr” from Bucharest. He also followed two years at Polytechnical Institute of Bucharest, before leaving the country. He obtained his PhD in 1976, the State-level Doctorate ès- Sciences (1981) and the Habilitation Diploma (1989), all from the Polytechnic Institute of Grenoble. He worked for two years as Assistant Professor before joining the CNRS (National Centre for Scientific Research) in 1977. His whole career is associated with this prestigious organization: he became a Director of Research in 1989 and exceptional-class Director in 2008. He is working in the domain of technologies and advanced devices in micro-nanoelectronics. Fig. 6.1 Dr. Sorin Cristoloveanu Sorin is the recipient of the IEEE Andy Grove award 2017, the highest distinction in micro-nanoelectronics. This prize rewards his vision and scientific contributions for more than 40 years. He is the first recipient from Romania, from France and the third one from Europe. The work of the Cristoloveanu team are devoted to innovative field-effect devices, including in the Silicon on Insulator (SOI) technology. We are quoting: (1) Volume inversion (198592), a phenomenon governing the modern devices (FinFET, FDSOI, nanowire etc.) and

92 F. BALESTRA, S. CRISTOLOVEANU, M. BENACHIR, J. BRINI, T. ELEWA, Double-gate silicon on insulator transistor with volume inversion: a new device with greatly enhanced performance, IEEE Electron Device Lett., EDL-8, n◦ 9, 410–412 (1987).

Chapter 1_Micro- and nanoelectronics

(2) Virtual substrate bias (DIVSB)93. The „Pseudo-MOS“ method94 became the standard for evaluating the quality of SOI wafers, as shown in the reference book95. For 20 years he is Editor of the Solid-State Electronics Journal, and he was promoted IEEE „Fellow“ in 2001. Sorin was the head of the LPCS laboratory (Polytechnical Institute of Grenoble) and he initiated the Centre for Advanced Projects in Microelectronics (CPMA), then becoming MINATEC, the most important European research centre in micro-nanotechnology. 6.2 The manager of the European public-private partnership in nanoelectronics. Andreas Anton Wild Born in 1950, Andreas Wild (Fig. 6.2) graduated the Faculty of Electronics from the Bucharest Polytechnical Institute in 1974 and obtained the Ph. D. degree from the Institute for Atomic Physics in 1992. From 1974 he was with IPRS Băneasa, working in design and technology of digital (TTL, I2L) and linear integrated circuits. In 1981 he was with Motorola GmbH, München as engineer for quality management; since 1986 he was manager for ASIC management, installing design centres in Germany, France, Sweden, Italy and U.K., installing a section which introduced in fabrication over 300 products. In 1993 he became the manager of the Laboratory for Low Power Semiconductor Products (SPS) of Motorola, USA. He contributed to technologies for portable electronics, such gradual channel technology GC-MOS,96 functioning at 0.9V97. In 1997 Dr. Wild was in charge of Motorola SPS, and then he conducted the extension in Latin America, with integrated circuit design centres in Campinas (Brazil) and Puebla (Mexico) and centres for embedded software in Santiago (Chile) and also in Bucharest. Since 2001 he was Director for Research at European branch of Motorola SPS, heading laboratories from Toulouse and München. Since 2002 he was Executive Director Delegate for Motorola in Crolles. From 2009, Dr. Wild was Executive Director of the Joint Undertaking „ENIAC“, Bruxelles, investing 4 billion of Euro in European in microelectronics98. In 2014, he was in charge of ENIAC with ARTEMIS, inaugurating „ECSEL JU“. Andreas Wild retired in 2015, becoming consultant. In 2017, Andreas Wild obtained „SEMI Special Service Award“ from SEMI Europe. 6,3 Fig. 6.2 Dr. Andreas Anton Wild 6.3 The first generation of Romanian specialists in microelectronics 6.3.1 Constantin Bulucea. Born in 1940, Constantin Bulucea (Fig. 6.3) graduated in 1962 the Faculty of Electronics, from the Polytechnical Institute of Bucharest, obtaining the Ph. D. degree from the same Faculty in 1974. In 1969, he obtained the diploma of Master of Science (MSc). University of California, Berkeley. As associated professor at the Faculty of Electronics in Bucharest, Dr. Bulucea was teaching Linear Integrated Circuits and Technology of MOS Devices. He was Scientific Director at CCPCE/ICCE (1970-1986) and Director of ICCE (1974-1984). He was in charge of the PNUD project for pilot development of MOS/LSI technology for microelectronics. Dr. Bulucea was the technical director of the national project devoted to microelectronics,

93 T. ERNST, C. TINELLA, C. RAYNAUD, S. CRISTOLOVEANU, Fringing fields in sub–0.1µm fully depleted SOI MOSFETs: optimization of the device architecture, Solid-State Electronics, 46, n◦ 3, 373–378 (2002). 94 S. CRISTOLOVEANU, S. WILLIAMS, Point contact pseudo–MOSFET for in-situ characterization of as-grown silicon on insulator wafers, IEEE Electron Device Letters, 13, n◦ 2, 102–104 (1992). 95 S. CRISTOLOVEANU, S.S. LI, Electrical Characterization of Silicon On Insulator Materials and Devices, Kluwer Academic Publishers, Boston, ISBN 0-7923-9548-4, 400 pages (1995). 96 K. Joardar, K.K. Gullapalli, C.C. McAndrew, M.E. Burnham, A. Wild, “An Improved MOSFET Model for Circuit Simulation”, IEEE Trans. Electron Devices, vol. 45, no. 6, pp. 134-148, 1998. Patent: US6033231. 97 A. Wild, et al., “A 0.9V Microcontroller for Portable Applications”, IEEE J. Solid-State Circuits, vol. 32, No. 7, p.1049, 1997. Patente: US5714393, US5811341, US5886921, US5920102. 98 A. Wild, „Foreword”, „Europe Positioning in Nanoelectronics”, în R. Puers et al., Nonoelectronics. Materials, Devices, Applications”, vol 1 pag. XXV, vol 2 pag. 553, Willey-VCH, Germany, ISBN 978-3-527-34053-8.

Chapter 1_Micro- and nanoelectronics

including the design of the factory, and the implementation of the technology developed by a research team from ICCE (1980-1984).

Fig, 6.3 Dr. Constantin Bulucea.

Dr. Bulucea founded (1978) the Annual Semiconductor Conference (in Romanian - Conferința Anuală de Semiconductoare, CAS) at the international standards (sections 4.2.5 and 4.3.10). In November1986 he left Romania. Between 1987 and 1990 he was Chief Engineer and Project Director at Siliconix, Santa Clara, California. In the time period 1990-2011, he was senior member of the technical group and then „Chief technologist“ la National Semiconductor, Santa Clara, California. Since September 2011, Dr. Bulucea became Distinguished Member of the Technical Group at Texas Instruments (following the acquisition of National Semiconductor by this company). He retired in August 2012.

Constantin Bulucea developed the theory of A.S. Grove related to the effect of the surface field on the breakdown voltage of planar devices (1972-1974)99, theory of avalanche injection in silicon gate-controlled devices, with the first record of hot electrons current (hundreds of pA) through the gate oxide (1974-1975)100, first power transistors (100 A) realized in „trench DMOS“ technology, using the so-called „Bulucea Clamp“, then used in all the world for the low voltage MOS power transistors (1986-1989)101. He was Honorary Editor at Solid-State Electronics Journal (1978-2012), and Editor of IEEE Electron Device Letters (1995-2012). Since 2012 is Editor of the on- line version of IEEE Journal of the Electron Device Society (J-EDS). He is IEEE Fellow and, since 2001, Honorary Member of the Romanian Academy.

6.3.2 Mircea V. Duşa. Mircea Dușa (Fig 6.4) graduated in 1970 the Faculty of Electronics from the Polytechnical Institute of Bucharest. He obtained the Ph. D. in Applied Optics (1993) from University “Politehnica” of Bucharest. Since 1970 until 1990 he worked in Romania and after 1990 in USA, having fifty years of experience in development and fabrication of semiconductor devices,

99 a) C. Bulucea, C. Postolache, and A. Rusu, „Avalanche Injection in Silicon Planar Semiconductor Devices“, Second International Conference on Solid Surfaces, Kyoto, March 25-29, 1974; b) C. Bulucea, A. Rusu, and C. Postolache, „Surface Breakdown in Silicon Planar Junctions“, Solid-State Electronics, vol. 17, pp. 881-888, 1974, c) A. Rusu and C. Bulucea, „Two-Dimensional Calculation of Avalanche Breakdown Voltage in Deeply-Depleted MOS Capacitors“, IEDM, 1976. 100 a) C. Bulucea, „Avalanche Injection into the Oxide in Silicon Gate Controlled Devices – I Theory“, Solid-State Electronics, vol. 18, pp. 363-374, 1975; b) C. Bulucea, „Avalanche Injection into the Oxide in Silicon Gate Controlled Devices – II Experimental Results“, Solid-State Electronics, vol. 18, pp. 381-391, 1975. The two papers are summarizing the Ph. D. thesis of Dr. Bulucea. 101 a) C. Bulucea, M. Kump, and K. Amberiadis, „Field Distribution and Avalanche Breakdown of Trench MOS Capacitors Operated in Deep Depletion“, IEEE Transactions on Electron Devices, vol. 36, pp. 2521-2529, 1989. b) C. Bulucea and R. Rossen, „Trench DMOS Transistor Technology for High Current (100 A Range) Switching“, Solid-State Electronics, vol. 34, pp. 493-507, 1991; c) T. Dyer, J. McGinty, A. Strachan, and C. Bulucea, „Monolithic Integration of Trench Vertical DMOS (VDMOS) Power Transistors into a BCD Process“, International Symposium on Power Semiconductor Devices and ICs, Santa Barbara, pp. 23-26, 2005.

Chapter 1_Micro- and nanoelectronics

Dr. Mircea Dușa was starting by working in nanolithography in San Jose (Silicon Valley). Since 1995 he was back in the semiconductor industry, at National Semiconductor, Fairchild Research Centre, Santa Clara, California. Starting 1999 he was with ASML, the most important provider of photo lithographical systems in the global semiconductor industry, as Founding Member of the Centre of Technological Development, working on next generation of ASML equipment, such as introducing the concept of „edge lithography“102, or the method „pitch-division“ using the Litho-Etch and Spacer-Assisted techniques and creating the first set of technical requirements for process control103. He is now with IMEC, Belgium. Fig. 6.4 Dr. Mircea Dușa

6.3.3 Andrei Vladimirescu (Fig. 6.5) graduated the Faculty of Electronics from the PolytechnicalInstitute of Bucharest in 1971. He obtained diplomas for Master of Science (1980) and Ph. D. in Electrical Engineering and Informatics, EECS (1982) from the California University, Berkeley. From 1971 to 1977 he was with ICCE, where he received a Hewlett-Packard award 104, and he designed the first p-channel MOS (PMOS) integrated circuit fabricated in Romania105. Since 1977 he was with the research group CAD for integrated circuits from the EECS Department (Prof. Donald Pederson), California University, Berkeley. He contributed to the development of the SPICE software (Simulation Program with Integrated Circuit Emphasis), being responsible for all versions since 1977, until the launching of the industrial SPICE2G6 version in 1981106. Fig. 6.5 Dr. Andrei Vladimirescu Dr. Vladimirescu was (1988-1997) director at Analog Design Tools Inc, and then at Valid Logic Systems Inc and Cadence Design Systems Inc. He is a research professor at California University, Berkeley and at the Institute of Electronics in Paris, ISEP. Dr. Vladimirescu had a major contribution in introducing modern MOSFET compact models. He also initiated the development of compact models for MOSFET with low-dimensions effects107, becoming dominant in the ’80. He is the author of The SPICE Book108 and Life Fellow IEEE. 6.3.4 Radu Vanco (Vancu), see Fig. 6.6. graduated in 1972 the Faculty of Electronics at the Polytechnical Institute of Bucharest (with the family name Mutică, modified in Vancu, after his marriage, and the in Vanco). He was with ICCE between 1972 and 1984. As the leader of the group for MOS integrated circuit design, he developed several products, including the first VLSI circuit in Romania. Between 1985 and 1991 he was with Seeq Technology (USA), first a design engineer and, since 1988, as Director of Design Engineering, He designed a high speed EEPROM operating at 35 ns, while the current products have been operating at 200 ns, the first EEPROM with error connection, winning the 1 Mbit competition against the competitor Nicor. Fig. 6.6 Dr. Radu Vanco

102 Prospects and Initial Results from Double Exposure/Double Pitch Technique, ISSM2005, San Jose, CA, Sept. 2005. 103 Manufacturing Challenges în Double Patterning Lithography ISSM, MC-233, Sept. 2006; Pitch Doubling Through Dual Patterning Lithography, Challenges în Integration and Litho Budgets, Proc. SPIE 6520-16, 2007; Dense Lines created by spacer DPT: process control by local dose adjustment using advanced scanner control, Proc. SPIE 7274-26, 2009; Double patterning lithography: The bridge between low k1 ArF and EUV; Microlithography World, Feb 2008. 104 A. Vladimirescu and D. Prisecaru, „Integrated Circuit Layout Design using HP Desktop Calculators“, Hewlett-Packard Keyboard, Vol. 7, No. 3, 1975. 105 A. Vladimirescu, „Computer-Aided Design of MOS Integrated Circuits“, IEEE J. Solid-State Circuits,Vol. SC-10, No. 3, June 1975. 106 A. Vladimirescu, et al., SPICE Version 2G User’s Guide, Univ. of California, Berkeley, August 1981. 107 A. Vladimirescu and S. Liu, „The Simulation of MOS Integrated Circuits using SPICE2“, UCB/ERL Memo M80/7, Univ. of California, Berkeley, Oct. 1980. 108 A. Vladimirescu, The SPICE Book, J. Wiley and Sons, New York, NY, 1994.

Chapter 1_Micro- and nanoelectronics

Between 1991 and 1993 he was Manager of the production line HDPLD, at Cypress Semiconductor. He is founder (1992) of Essex Com srl and LXI Corporation, located in Bucharest, Romania, and in Silicon Valley, California, respectively. These companies are active in software development, hardware and engineering services. Between 1993 and 2002, he was with Catalyst Semiconductor, first as VPE (VP Engineering), and then as VP Executive, developing programable products Flash, EEPROM and Mixed Signal. Later on, this company was acquired by ON Semiconductor. Since 2005 he is the founder and CEO of WebVision Inc., a company developing innovative technologies Web 2.0 relating to the accessing, organizing and distributing multimedia information. This company has a portfolio of news and media web sites, including Quazoo.com and Snipview.com.

6.3.5 Radu Bârsan (Fig. 6.7). Dr. Bârsan graduated in 1976 the Faculty of Electronics, Polytechnical Institute of Bucharest. He has a Ph.D. in Applied Sciences (specialized in microelectronics) Catholic University of Louvain, Belgium (1981), as well as a Ph. D. in electronics at the Faculty of Electronics from Bucharest (1986). Working at ICCE (1976-1982) he developed software program for CAD of integrated circuits, also developing the first semiconductors with charge-transfer109, as well as the first fabrication technologies for MOS integrated circuits in the enterprise Microelectronica, where he was in charge of the department of technology and fabrication of integrated circuits (1982-1990).

Fig. 6.7 Dr. Radu Bârsan

Dr. Bârsan established himself in USA, in 1990, working for various companies. At Cypress Semiconductor (California) he developed a technology for a non-volatile memory. At AMD (Advanced Micro Devices) in Sunnyvale, California he developed technologies for VLSI circuits, including an integrated non-volatile memory. At Cyrus Logic, Fremont, California Dr. Bârsan developed new technologies for integrated circuits, in cooperation with IBM and Lucent (former AT&T). At Phaethon Communications (Fremont, California), he developed new laser technologies for optical fibres. As president of the company Redfern Integrated Optics (RIO) he was coordinating the realization of the first laser, with external cavity integrated in silicon. He was vice-president of Power Integrations from San Jose, California.

6.3.6 Viorel Banu (Fig. 6.8). Viorel Banu graduated (1978) the Faculty of Electronics in Bucharest and then started his activity at IPRS-Băneasa, section 2300, for diodes and tyristors. He developed technologies for power devices, including for nuclear applications, in cooperation with IFTAR, Măgurele. In IPRS Băneasa he was head of section (department). Since 2007 he is working in Spain, in research for wide-gap power devices (WBG), such as silicon carbide (SiC), gallium nitride (GaN) or gallium- aluminium nitride (Al-GaN). At IMB-CNM Barcelona he was working at the development of diodes for spatial mission BepiColombo, devoted to sending a space probe on Mercury110. He was involved in development of power devices on silicon carbide111, as well as the design of integrated circuits on SiC with MESFET power transistors112.

109 He is the author of „Dispozitive şi circuite integrate cu transfer de sarcină“ (in Romanian), Technical Publishing House, 1981; „Fizica şi tehnologia circuitelor integrate pe scară mare” (in Romanian), Technical Publishing House, 1989, both extensively used by generations of students from Romania. 110 See for example: V. Banu, P. Brosselard, X. Jordá, J. Montserrat, P. Godignon, J. Millán, „Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress“, Microelectronics Reliability 48 (2008) 1444–1448. 111 V. Banu, V. Soler, J. Montserrat, J. Millán, P. Godignon, „Power cycling analysis method for high-voltage SiC diodes“, Microelectronics Reliability, 2016, Vol. 64 pp 420-423. V. Banu, P. Godignon, X. Perpiñà, X. Jordá, J. Millàn, „Enhanced power cycling capability of SiC Schottky diodes using press pack contacts“, 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2012. 112 V. Banu, J. Montserrat, M. Alexandru, X. Jordà, J. Millán, P. Godignon, „Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits“, Proceedings of: The International Conference on Silicon Carbide and Related Materials 2013.

Chapter 1_Micro- and nanoelectronics

Fig. 6.8 Dr. Viorel Banu 6.4 A new generation of specialists in nanoelectronics and nanotechnology 6.4.1 Sorin Voinigescu. Sorin P. Voinigescu (Fig. 6.9) graduated (1984) the Faculty of Electronics (speciality microelectronics) from the Polytechnical Institute of Bucharest. He obtained his Ph. D. (1994) from the Department of Electrical Engineering and Computers from the University of Toronto. Between 1994 and 2000, Dr. Voinigescu was with NORTEL, Ottawa, being in charge with the developing of models for semiconductor devices on Si, SiGe, III-V compounds. Dr. Voinigescu was also in charge of design of integrated circuits for mobile phone communication systems at 5 GHz and by optical fibre at 40 Gb/s using the following technologies: CMOS, SiGe BiCMOS, GaAs HBT and InP HBT. In 2000, Sorin Voinigescu was the co-founder and the CTO of the start-up Quake Technologies in Ottawa, Canada. This company introduced the first system-on-chip SONET at 10 Gb/s and 10 GEthernet in the world, in 2001 and, respectively, in 2002.

Fig. 6.9 Prof. Sorin P. Voinigescu

For 30 years Dr. Voinigescu was working on noise of the microwave active devices, publishing a number of papers113, 114 and patents115 frequently cited. Despite commercial success he was nominated IEEE Fellow, and received the award of the President of the Nortel multinational company (1996). He developed an algorithm for solving simultaneously the Poisson equation and Schrodinger equation in quantum devices, applying it for HEMT transistors and to energy levels in coupled quantum potential wells116, 117. Since 2002, he is professor (holding the Stanley Ho in microelectronics). He is the author of several frequently cited papers on microwave devices and integrated circuits on Si and SiGe, as well as the author of a book highly appreciated in industry, namely „High- Frequency Integrated Circuits“, Cambridge University Press (2013). In 2009-2010 he was the co-founder and Chief Technology Officer (CTO) of the company Peraso Technologies from Toronto, developing and selling integrated circuits for 60 GHz radios. In 2013, he received ITAC Lifetime Career Award for his achievements in Canadian Semiconductor Industry.

6.4.2 Adrian Ionescu (Fig. 6.10). Adrian Ionescu graduated the Faculty of Electronics of Bucharest, where he obtained his first Ph.D. degree in 1994. In 1997 he sustained the second Ph. D. thesis at the Institut National Politechnique de Grenoble. After spending a year at Stanford University (USA), Adrian Ionescu set-up at the Ecole Polytechnique Fédérale de Lausanne (EPFL) the research laboratory Nanolab (Laboratoire des dispositifis nanoélectroniques: https://nanolab.epfl.ch/). His team develops new concepts of electron devices (single electron transistor, SET) and their hybridization of the same CMOS technological platform. A number of outstanding research works related to SET

113 S.P. Voinigescu, M.C. Maliepaard, J.L. Showell, G. Babcock, D. Marchesan, M. Schroter, P. Schvan, and D.L. Harame, „A Scalable High Frequency Noise Model for Bipolar Transistors with Application to Optimal Transistor Sizing for Low- Noise Amplifier Design“, IEEE Journal of Solid-State Circuits, Vol. 32, No. 9, pp. 1430-1438, 1997. 114 T. Yao, M.Q. Gordon, K.K.W. Tang, K.H.K. Yau, M-T. Yang, P. Schvan, and S.P. Voinigescu, „Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio“, IEEE Journal of Solid State Circuits. Vol. 42, No. 5, pp. 1044-1057, May, 2007. 115 S.P. Voinigescu and M.C. Maliepaard on „High frequency noise and impedance matched integrated circuits“, US Patent No: 5789799. 116 S. Voinigescu, „Quantum modelling of charge distribution in single and multiple heterojunction modfets“, Int. J. Electronics, vol. 66, pp. 227-245, 1989. 117 S. Voinigescu, A. Müller, „Charge Dynamics in Heterostructure Schottky-Gate Capacitors and Their Influence on the Transconductance and Low-Frequency Capacitance of MODFET's“, IEEE Trans. El.. Dev., Vol. ED-36, pp. 2320-2327, 1989.

Chapter 1_Micro- and nanoelectronics

are summarized in a monograph118. The group of Prof. Ionescu is a leader in European projects carried on by academic and industrial teams. Fig. 6.10 Prof. Adrian Ionescu We are mentioning the following original contributions of Prof. Ionescu: the concept of „vibrating body FET“, with applications in sensors and radio frequency devices, Electro-Mechanical-Systems (NEMS), various advanced concepts for tunnel FET119, first concept of Density-of-States (DOS) transistor, called Electron-Hole Bilayer Tunnel FET120, first experimental demonstration of the negative capacity effect121. Recently, he elaborated the concept of multi-sensor Lab On Skin, for the measurement of the concentration of biomarkers in corporal fluids, with applications in personalized medicine, as well as in preventive medicine. Based on this concept, the swiss company Xsensio122 was founded. Adrian Ionescu is IEEE Fellow from 2016. For 6 years (2009-2015) he was Editor of IEEE Transactions on Electron Devices). In 2009 he received the André Blondel Medal from the Society of Electrical and Electronics Engineering, Paris, France. Also, in 2013 he received IBM Faculty Award, for contributions in engineering sciences. Since 2015, professor Adrian Ionescu is a member of the Swiss Academy for Engineering Sciences (SATW)123.

6.4.3 Florin Udrea (Fig. 6.11). Florin Udrea graduated in 1991 the Faculty of Electronics from Bucharest. In 1992, with a TEMPUS grant, he obtained a M.Sc. degree in microsensors at the University of Warwick (UK). Florin obtained his Ph.D. in power semiconductor devices, at the Cambridge University (1995)124. In his thesis, he was demonstrating for the first time the necessity of using the „trench“ technology in „Insulated Gate Bipolar Transistors (IGBTs)“125. He also suggested a new physical phenomenon – the injection in an inversion layer (modulated by an MOS gate) which can be used in diodes, bipolar transistors and thyristors as a virtual emitter126,127.

Fig. 6.11 Prof. Florin Urea

Since 2008, Florin Udrea is University Professor and head of the research group (of about 20 people) for power electronics and sensors at the Engineering Department of the Cambridge University. During the 1995-2000 time period Florin developed „Silicon-on-insulator (SOI)“ technologies128, „power integrated circuits“ and Micro-

118 A.M. Ionescu, S. Mahapatra, Hybrid CMOS single-electron-transistor device and circuit design, 2006, Artech House, Inc. Norwood, MA, USA. 119 A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches, Nature 479 (7373), 2011, pp. 329-337. 120 L. Lattanzio, L. De Michielis, A.M. Ionescu, Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation, IEEE Electron Device Letters 33 (2), 2012, pp. 167-169. 121 G.A. Salvatore, D. Bouvet, A.M. Ionescu, Demonstration of subthrehold swing smaller than 60mV/decade în Fe-FET with P (VDF-TrFE)/SiO 2 gate stack, IEEE IEDM 2008. 122 https://xsensio.com/ 123 https://www.satw.ch/en/ueber-satw/members/ 124 Udrea, F. (1995). Novel MOS-gated bipolar device concepts towards a new generation of power semiconductor devices. PhD Thesis, Cambridge University. 125 Udrea F. and AMARATUNGA, C.A.J. (1995). „Theoretical and Numerical Comparison between DMOS and Trench technologies for Insulated Gate Bipolar Transistors“, IEEE Transaction on Electron Devices, 42(7), p. 1356-1366. 126 Udrea F. and AMARATUNGA, C.A.J. (1994). „Analysis of a MOS-Controllable Thyristor utilizing an Inversion Layer“ Solid State Electronics, 37(12), p. 1999-2002. 127 Udrea, F., Udugampola, U.N.K., Sheng, K., McMahon, R.A., Amaratunga, G.A.J., Narayanan, E.M.S., Hardikar, S. (2002). Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET). IEEE ELECTR DEVICE L, 23(12), 725-727. 128 Udrea, F., Garner, D., Sheng, K., Popescu, A., Lim, H.T., & Milne, W.I. (2000). SOI power devices. ELECTRON COMMUN ENG, 12(1), 27-40.

Chapter 1_Micro- and nanoelectronics

Electro-Mechanical Systems (MEMS)129. In 1998, he introduced the concept of „Superjunction“130, one of the most valuable inventions in the domain of power devices. Devices based on this concept, such as „Cool MOS“, have an annual market of the order of one billion USD131. His invention of high-voltage (600 V) devices on membrane132, lead to the set up (2000) of the company Cambridge Semiconductor Ltd (Camsemi), which sold above 1 billion of power integrated circuits and in 2015 was purchased by Power Integrations, SUA ($20M). Another company, Cambridge CMOS Sensors (founded by Florin Udrea in 2008) was the first to launch a gas microsensor measuring air quality, compatible with mobile phones and other „smart“ devices. In 2016, this company was of the most profitable „trade exits“ from the University of Cambridge, being purchased by Ams (the most important company in environmental sensors and also in „smart homes“, „smart wearables“ and „smart devices“). Prof. Udrea (Cambridge University and Cambridge CMOS Sensors) coordinated European projects such as: Framework V WIDE-RF and ROBUSPIC, Framework, SOI-HITS, Horizon 2020 MSP, GREEN DIAMOND, E2-SWITCH, NANO2SENSE. He was also in charge of industrial projects, with partners as ABB (Switzerland), Infineon (Germany), Honeywell (USA and Romania), Fuji Electric (Japan), Denso (Japan), Toyota (Japan), Vishay (Taiwan), Siliconix (USA), XFAB (Malaysia and Romania), NXP (Belgium), On-Semiconductor (Germany and USA). He is now CTO of Cambridge Microelectronics, Director in Flusso and Cambridge GaN Devices and Academic Director in the Board of Cambridge Enterprise. Florin is also Senior Director at Ams, Division for Environmental Sensors. He received the Silver Medal of Royal Academy fo engineering from Great Britain (2012) for „outstanding personal contribution to British Engineering“. Since 2015, Florin Udrea is „fellow“of the Royal Academy for Engineering of Great Britain.

6.4.4 Sorin Melinte (Fig. 6.12). Sorin Melinte graduated the Faculty of Physics of the Bucharest University in 1969 (specialization in Solid-State Physics). His M. Sc. and Ph.D. (2001) are from UCL, Université Catholique de Louvain (Belgium). The main target of his Ph. D. thesis are fabrication and characterization of mesoscopic and nanoscopic systems, such as thin metal layers and III-V semiconductor heterostructures. Later on, Dr. Melinte developed new electron devices based on GaAs/AlAs (Princeton University, 2001-2003). Three papers Physical Review Letters have been quoted more than 100 times133. Fig. 6.12 Prof. Sorin Melinte Then Sorin Melinte became Professor at UCL and founded the research group for Molecular Electronics (2003). The main target of his group is to find a molecule or a set of molecules able to perform the functions of conventional electron devices (such as diodes or transistors). He is also interested in interconnecting molecular units, in order to get systems able to perform arithmetic or logic functions. Since 2012, Prof. Melinte is also involved in nanoenergetics and nanophotonics with Si nanostructures134.

129 Udrea, F., & Gardner, J.W. (1996). Design of a silicon microsensor array device for gas analysis. MICROELECTR J, 27(6), 449-457. 130 Udrea, F., Popescu, A., & Milne, W.I. (1998). 3D RESURF double-gate MOSFET: A revolutionary power device concept. ELECTRON LETT, 34(8), 808-809. 131 Udrea, F., Deboy, G., & Fujihira, T. (2017). Superjunction power devices, history, development, and future prospects. IEEE Transactions on Electron Devices, 64(3), 713-727. 132 Udrea, F., Trajkovic, T., & Amaratunga, G.A.J. (2004). Membrane high voltage devices – A milestone concept în power ICs. În IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST (pp. 451-454). 133 V. Bayot, E. Grivei, S. Melinte, M.B. Santos, and M. Shayegan, Giant Low Temperature Heat Capacity of GaAs Quantum Wells near Landau Level Filling  = 1, Phys. Rev. Lett.76 (1996), 4584-4587; S. Melinte, N. Freytag, M. Horvatic, C. Berthier, L.-P. Lévy, V. Bayot, and M. Shayegan NMR Determination of 2D Electron Spin Polarization at  = 1/2, Phys. Rev. Lett. 84 (2000), 354-357; E. Tutuc, S. Melinte, and M. Shayegan Spin Polarization and g-Factor of A Dilute GaAs Two- Dimensional Electron System, Phys. Rev. Lett. 88 (2002), 036805(4). 134 A. Vlad, A.L.M. Reddy, A. Ajayan, N. Singh, J.-F. Gohy, S. Melinte, and P.M. Ajayan, Roll-Up Nanowire Battery from Silicon Chips, Proc. Natl. Acad. Sci. 109 (2012), 15168-15173.; A. Vlad, A. Frölich, T. Zebrowski, C.A. Duțu, K. Busch, S. Melinte, M. Wegener, and Isabelle Huynen, Direct Transcription of Two-Dimensional Colloidal Crystal Arrays into Three- Dimensional Photonic Crystals, Adv. Funct. Mater. 23 (2013), 1164-1171. [Res. highlights, Materials Today 15 (2012), 531.

Chapter 1_Micro- and nanoelectronics

6.4.5 Daniel Lăpădatu (Fig. 6.13). Daniel Lăpădatu graduated the Faculty of Electronics from Bucharest in 1991. In 1992 he obtained the M.Sc. degree, and in 1996 the Ph. D. degree at the Faculty of Applied Sciences at KU Leuven – Katholieke Universitet Leuven), Belgium. Since 1996 he was with SensoNor ASA, designing various accelerometers, such as SA5 (uniaxial switch)135, SI10 (biaxial, capacitive)136, SA30 (biaxial, piezoresistive), SA50 (biaxial, capacitive), SAC60 (uniaxial, piezoresistive) and of the sensor of angular velocity SAR10 (uniaxial, capacitive)137. Between 2003 and 2009 Dr. Lăpădatu was at Infineon Tehnologies AG, as manager of MultiMEMS138, providing an MPW (Multi -Purpose Wafer) service to industrial and academic partners. From 2009 to 2014 he was back at Sensonor ASA, being involved in the fabrication technology of the most performant MEMS gyroscope139,140. Between 2014 and 2015, within poLight company, Daniel Lăpădatu conceived and implemented a testing method of TLens®, a piezoelectric lens for optical modules from smartphones. Since 2015 he is Technical Director at the Romanian company Alfa Rom Consulting SRL. Fig. 6.13 Dr. Daniel Lăpădatu

6.5 In Memoriam: Andrei Mircea (1935-2011)141Andrei Mircea (Fig. 6. 14) was born (1936) in Bucharest. Since 1951 he started his academic studies simultaneously at the Polytechnic Institute of Bucharest (in electronics) and the University of Bucharest (in Physics). He graduated in 1956 the Faculty of Electronics and Communications in 1956 (first promotion) and the Faculty of Physics. The specialisation was in radiocommunications and solid-state physics, respectively. He was Ph.D. in Communications (1966) at the PolytechnicalInstitute of Bucharest and „Docteur es-Sciences“ at the Université Pierre-et-Marie-Curie, Paris, in 1976 (Since 1968 he was established in France). Fig. 6.14 Dr. Andrei Mircea Andrei Mircea was teaching assistant (1956-1957) at the Polytechnical Institute of Bucharest, Faculty of Electronics and Communications, Department of Radiocommunications (Prof. Gheorghe Cartianu); researcher at the Research Institute for Electrical Engineering (1957-1960), then transferred to the Laboratory de the Semiconductor Laboratory, I.P.R.S. Băneasa, Băneasa (1965-1968); senior researcher at the Institute for Atomic Physics (I.F.A.), Vacuum Technology Laboratory, Măgurele (1965-1968); once leaving Romania he becomes, successively, researcher at Philips, la Radiotechnique-Compelec, Laboratoire de Semiconducteurs, Suresnes, France (1968-1970); head of the research group Microelectronic Devices (about 20 persons) and head of the Department for Basic Studies, Physics and technology (approx. 30 persons) at Philips, Laboratoire d’Electronique et de Physique (L.E.P.), Limeil Brévannes (1970-1979); researcher, head of the Department for Physics and Technology of Semiconductor Devices (about 40 persons) (1979-1980), head of the Department for Semiconductor Materials (20 persons) (1980-1984), head of the Division Optoelectronic Components (about 70 persons) (1984-1994), Deputy Director, coordinator of the CATON program (composants pour transmissions

135 D. Lapadatu, H. Jakobsen, „Building of silicon mechanical sensors by bulk micromachining and anodic bonding“, Romanian Journal of Information Science and Technology, Vol. 2, 1-2, (1999), p. 71. 136 D. Lapadatu, S. Habibi, B. Reppen, G. Salomonsen, T. Kvisterøy, „Dual-axes capacitive inclinometer/low-g accelerometer for automotive applications“, Proc. of MEMS 2001, (2001), p. 34; JP2001-203371, „Micromechanical Device“, Japan patent, 2001; KR1020000051999, „Micromechanical Device“, Korea patent, 2001. 137 US6684699 B1, „Micromechanical Device“, US patent, 2004; EP1096260 B1, „Micromechanical Device“, European patent, 2005. 138 D. Lăpădatu, „MultiMEMS Design Handbook“, Infineon Technologies AG and Sensonor Technologies, 2009. 139 WO2011/128449, „MEMS Structure for an Angular Rate Sensor“, World patent, 2011. 140 EP2378246 A1, „MEMS Structure for an Angular Rate Sensor“, European patent, 2011. 141 Excerpts reproduced with permission of the author (Aurel Millea) from the biography published (pp. 116-121) in „File din istoria radiotehnicii şi electronicii românesti: personalităţi“ (in Romanian, Andrei Ciontu coordinator), NAGARD, Lugoj 2013.

Chapter 1_Micro- and nanoelectronics

optiques numériques) (about 70 people) at France Telecom, Centre National d’Etudes des Télécommunications (C.N.E.T.), Centre Paris B, Laboratoire de Bagneux (1979-2000). His scientific research was related to the following domains: communications theory (distortions of the frequency modulated, FM signals, response of networks to FM signals, intermodulation noise in FM signals etc.); vacuum physics; semiconductor devices (resistivity measurements, Gunn and IMPATT diodes, microwave semiconductor devices, technological optimization etc.); epitaxy of organometallic compounds. He received: Prix Foucault de la Société Francoise de Physique (1979) for research on deep energy levels in semiconductors; Prix C.N.E.T. France Telecom (1990) for research in the epitaxy of organometallic compounds. During his activity in France, Andrei Mircea proved very good qualities of organizer and coordinator, acting as head of laboratory or deputy director. At the same time, he was all the time an active researcher, working effectively within the team. He has (as a rule, as first author) a large number of papers published in important research journals. In 1996, while at CNET he was declared „man of the year“. Since 2000, after retirement and until his death, he joined a team, financed from extrabudgetary funds, at the Ecole Polytechnique Fédérale de Lausanne (EPFL, Switzerland). He died from a heart attack on 5th of March, 2011.

The author of this chapter is Dan Dascălu, full member of the Romanian Academy, Professor Emeritus at the University POLITEHNICA from Bucharest, Faculty of Electronics, Communications and Information Technology, Department for Electronic Devices, Circuits and Architectures. He founded and directed Centre of Microtechnology - CMT (1991), then Institute of Microtechnology - IMT (1993-1996). He was the General Manager of the National Institute for Research and Development in Microtechnologies (IMT Bucharest) from 1996 (when IMT merged with ICCE) until 2011. Photo and details related to his professional activity can be found in section 2.4 of this chapter.