Cascode Summary • Cascaded Amplifier Design • Amplifier Biasing • Other Amplifier Configurations • Digital Circuit Design

Total Page:16

File Type:pdf, Size:1020Kb

Cascode Summary • Cascaded Amplifier Design • Amplifier Biasing • Other Amplifier Configurations • Digital Circuit Design EE 330 Lecture 36 • Cascode Summary • Cascaded Amplifier Design • Amplifier Biasing • Other Amplifier Configurations • Digital Circuit Design Review from Last Lecture The Cascode Amplifier (consider npn BJT version) VCC IB VOUT Q2 VXX Q1 VIN VSS • Actually a cascade of a CE stage followed by a CB stage but usually viewed as a “single-stage” structure • Cascode structure is widely used Review from Last Lecture Cascode current sources IX IX Q2 M2 VXX VXX IX VYY VYY M1 Q1 VSS VSS VSS g0CC VCC VCC VDD Q1 VYY IX M1 VYY VXX Q2 M2 VXX All have the same small-signal model I IX X g02 g 01 +gπ2 g=0CC g01 +g 02 +gπ2 +g m2 Current Source Summary (BJT) Basic Cascode IX IX VCC VCC V YY Q1 Q1 Q2 VYY Q1 VYY VXX VSS I X VYY VXX Q2 Q1 VSS IX g01 g01/b g01 gg0 01 g 0CC β Current Source Summary (MOS) Basic Cascode IX VDD IX M2 V VXX V DD YY VYY M1 M1 V YY M 1 V VYY M1 ZZ VSS M2 IX VSS IX g0 g0 gg 0 01 g02 gg0 01 gm2 High Gain Amplifier Comparisons ( n-ch MOS) VCC VDD VCC IB VDD VOUT IB VDD VZZ VOUT M2 V M4 M1 YY VZZ VIN M3 VOUT M2 VXX VZZ M VSS 1 M3 VIN VOUT V M1 SS M2 VOUT gm1 VIN A-V VXX g 01 M2 VXX 1 gm1 VSS A- M1 V V 2g01 IN M1 VIN ggm1 m2 VSS A-VCC gg01 02 VSS gm1 A-VCC g01 1 ggm1 m2 A-VCC 2 g01 g 02 High Gain Amplifier Comparisons (BJT) VDD VCC VCC IB V IB OUT VYY VOUT VIN Q1 VOUT V Q1 IN VCC V EE Q2 Q V VXX VYY 3 CC V -g EE VOUT Q m VZZ 3 AV g Q2 0 VXX 1 g VYY Q4 m1 Q1 A VOUT V V 2gIN Q1 01 gm1 VIN Q2 AV β VXX g 01 VSS VSS Q1 g VIN A m1 V V g01 SS gm1 β A=V g201 The Cascode Amplifier • Operational amplifiers often built with basic cascode configuration • Usually configured as a differential structure when building op amps • Have high output impedance (but can be bufferred) • Terms “telescopic cascode”, “folded-cascode”, and “regulated cascode” often refer to op amps based upon the cascode configuration VDD VB1 M5 M6 VB2 M7 M8 VOUT VB3 M3 M4 VIN VIN M1 M2 IT V B5 M 11 V SS Telescopic Cascode Op Amp (CMFB feedback biasing not shown) Cascade Configurations VDD VDD IB1 IB2 IB1 IB2 VOUT VOUT M1 Q1 Q2 VIN VIN M2 VSS Two-stage Cascade VSS A?VCB A?VCM Cascade Configurations VDD VDD IB1 IB2 IB1 IB2 VOUT VOUT M1 Q1 Q2 VIN VIN M2 VSS Two-stage Cascade VSS -gm1 -g m2 g m1 g m2 g m1 AVCB β g01 +g 2 g 02 g 2 g 02 g 02 -gm1 -g m2 g m1 g m2 AVCM g01 g 02 g01 g 02 • Significant increase in gain • Gain is noninverting • Comparable to that obtained with the cascode Cascade Configurations VDD VDD VYY VXX VYY VXX M4 Q3 Q4 M3 VOUT VOUT M1 Q1 Q2 VIN VIN M2 VSS Two-stage Cascade VSS -gm1 -g m2 g m1 g m2 g m1 AVCB β g01 +g 03 +g 2 g 02 +g 04 2g 2 g 02 2g 02 -gm1 -g m2 g m1 g m2 AVCM g01 g 03 g 02 g 04 4g01 g 02 Note factor or 2 and 4 reduction in gain due to actual current source bias Cascade Configurations V VDD DD I I I IB1 IB2 B1 B2 B3 VOUT VOUT VIN Q1 Q2 Q3 VIN Q1 Q2 VSS VEE Two-stage Cascade Three-stage Cascade • Large gains can be obtained by cascading • Gains are multiplicative (when loading is included) • Large gains used to build “Op Amps” and feedback used to control gain value • Some attention is needed for biasing but it is manageable • Minor variant of the two-stage cascade often used to built Op Amps • Compensation of two-stage cascade needed if feedback is applied to maintain stability • Three or more stages are seldom cascaded because no really good way to compensate to maintain stability Differential Amplifiers VDD R1 R2 VOUT1 VOUT2 V1 Q1 Q2 V2 ITAIL VSS Basic operational amplifier circuit Amplifier Biasing Amplifier biasing is that part of the design of a circuit that establishes the desired operating point (or Q-point) Goal is to invariably minimize the impact the biasing circuit has on the small-signal performance of a circuit Usually at most 2 dc power supplies are available and these are often fixed in value by system requirements – this restriction is cost driven Discrete amplifiers invariable involve adding biasing resistors and use capacitor coupling and bypassing Integrated amplifiers often use current sources which can be used in very large numbers and are very inexpensive Amplifier Biasing Example: Vout RL Vin VDD R RB1 C1 C2 AV =-g m R L Vout C1 C Desired small-signal circuit B E RL Common Emitter Amplifier Vin RB2 RE1 C Vout 3 RL//RC1 Biased circuit Vin RB1//RB2 Actual small-signal circuit AV =-g m R L //R C1 Amplifier Biasing Example: Vout RL Vin Desired small-signal circuit Common Emitter Amplifier VDD R RB1 C1 C2 Vout C1 C B E RL Vin RB2 RE1 C3 Biased small-signal circuit Amplifier Biasing Example: Vout Vin RL Desired small-signal circuit V Common Collector Amplifier DD Vout Vin IB RL VSS Biased circuit Amplifier Biasing Example: R2 R1 Vin Vout Desired small-signal circuit Inverting Feedback Amplifier R2 R1 VDD Vin Vout VSS Biased circuit Other Basic Configurations C B Q1 Q2 E Darlington Configuration • Current gain is approximately β2 • Two diode drop between Beff and Eeff Other Basic Configurations C B Q1 Q2 E Sziklai Pair • Same basic structure ad Darlington Pair • Current gain is approximately βn βp • Current gain will not be as large when βp< βn • Only one diode drop between Beff and Eeff Other Basic Configurations Low offset buffers VDD VCC IB2 IB2 VOUT M1 VOUT VIN M2 VIN Q1 Q2 ZL ZL IB1 IB1 VSS VEE • Actually a CC-CC or a CD-CD cascade • Significant drop in offset between input and output • Biasing with DC current sources Other Basic Configurations Voltage Attenuator VDD VDD VDD M2 VOUT VIN VOUT VOUT VIN VIN M1 • Attenuation factor is quite accurate (Determined by geometry) • Infinite input impedance • M1 in triode, M2 in saturation • Actually can be a channel-tapped structure Amplifier Wrap-Up We will now draw closure to the focus on amplifiers in this course (high-frequency performance will be considered later if time permits) with a brief review: • Amplifier Design Strategies • MOS-Bipolar mappings • Large and Small Signal Models • Basic Amplifier Configurations Amplifier Design Strategies • Draw on Past Experience • Often leads to Circuit or Architecture that can be modified or extended • Remember unique characteristics observed for circuit structures for future use even if not relevant in an existing deisgn • Identify the degrees of freedom in the design and the number of constraints and then systematically explore the design space • Simulation-guided computer simulation is not an effective way of exploring a multi-variable design space ! MOS Amplifiers (summary) • 1-1 mapping between almost all bipolar amplifiers and MOS amplifiers • Simply replace BJT with MOS devices and redo the biasing • Small-signal gains for MOS circuits in terms of small-signal model parameters identical if set gπ = 0 for BJT circuits MOS-Bipolar Amplifier Mapping V VOUT OUT VIN VIN Common Emitter Common Source VIN VIN VOUT VOUT Common Collector Common Drain VOUT VOUT VIN VIN Common Base Common Gate Can use these equations only when small signal circuit is EXACTLY like that shown !! MOS-Bipolar Amplifier Mapping Example: Common Emitter – Common Source Circuits VDD G VOUT VOUT gm AV VIN G gGo VIN 1 RIN g VSS g 0 VCC G VOUT VOUT gm G AV VIN gG VIN o RIN VEE Digital Circuit Design Most of the remainder of the course will be devoted to digital circuit design 3.5V C M6 B M5 A M4 F F C M3 B M2 Verilog A M1 VHDL module gates (input logic [3:0] a,b, library IEEE; use IEEE.STD_LOGIC_1164.all; output logic [3:0] y1,y2,y3,y4,y5); entity gates is assign y1 = a&b; //AND port(a,b: in STD_LOGIC_VECTOR(3 dowto 0); assign y2 = a | b; //OR y1,y2,y3,y4,y5:out STD_LOGIC_VECTOR(3 downto 0)); assign y3 = a ^ b; //XOR end; assign y4 = ~(a & b); //NAND architecture synth of gates is assign y5 = ~( a | b); //NOR begin endmodule y1 <= a and b; y2 <= a or b; y3 <= a xor b; A rendering of a small standard y4 <= a nand b; cell with three metal layers y5 <= a nor b; (dielectric has been removed). end; The sand-colored structures are metal interconnect, with the vertical pillars being contacts, typically plugs of tungsten. The reddish structures are polysilicon gates, and the solid at the bottom Standard Cell Library is the crystalline silicon bulk Digital Circuit Design • Hierarchical Design • Propagation Delay with • Basic Logic Gates Multiple Levels of Logic • Properties of Logic Families • Optimal driving of Large • Characterization of CMOS Capacitive Loads Inverter • Power Dissipation in Logic • Static CMOS Logic Gates Circuits – Ratio Logic • Other Logic Styles • Propagation Delay • Array Logic – Simple analytical models • Ring Oscillators – Elmore Delay • Sizing of Gates Hierarchical Digital Design Domains: Top Behavioral: Structural: Physical Bottom Multiple Levels of Abstraction Hierarchical Digital Design Domains: Top Behavioral: Design Down Top Structural: Physical Design Bottom Up Bottom Hierarchical Digital Design Domains: Top Top Down Design Down Top Behavioral: Structural: Bottom Up Design Bottom Up Physical Bottom Multiple Sublevels in Each Major Level All Design Steps may not Fit Naturally in this Description Hierarchical Analog Design Domains: Top Behavioral: Design Down Top Structural: Physical Design Bottom Up Bottom Hierarchical Digital Design Domains: Behavioral : Describes what a system does or what it should do Structural : Identifies constituent blocks and describes how these blocks are interconnected and how they interact Physical : Describes the constituent blocks to both the transistor and polygon level and their physical placement and interconnection Multiple representations often exist at any level or sublevel End of Lecture 36 .
Recommended publications
  • PH-218 Lec-12: Frequency Response of BJT Amplifiers
    Analog & Digital Electronics Course No: PH-218 Lec-12: Frequency Response of BJT Amplifiers Course Instructors: Dr. A. P. VAJPEYI Department of Physics, Indian Institute of Technology Guwahati, India 1 High frequency Response of CE Amplifier At high frequencies, internal transistor junction capacitances do come into play, reducing an amplifier's gain and introducing phase shift as the signal frequency increases. In BJT, C be is the B-E junction capacitance, and C bc is the B-C junction capacitance. (output to input capacitance) At lower frequencies, the internal capacitances have a very high reactance because of their low capacitance value (usually only a few pf) and the low frequency value. Therefore, they look like opens and have no effect on the transistor's performance. As the frequency goes up, the internal capacitive reactance's go down, and at some point they begin to have a significant effect on the transistor's gain. High frequency Response of CE Amplifier When the reactance of C be becomes small enough, a significant amount of the signal voltage is lost due to a voltage-divider effect of the source resistance and the reactance of C be . When the reactance of Cbc becomes small enough, a significant amount of output signal voltage is fed back out of phase with the input (negative feedback), thus effectively reducing the voltage gain. 3 Millers Theorem The Miller effect occurs only in inverting amplifiers –it is the inverting gain that magnifies the feedback capacitance. vin − (−Av in ) iin = = vin 1( + A)× 2π × f ×CF X C Here C F represents C bc vin 1 1 Zin = = = iin 1( + A)× 2π × f ×CF 2π × f ×Cin 1( ) Cin = + A ×CF 4 High frequency Response of CE Amp.: Millers Theorem Miller's theorem is used to simplify the analysis of inverting amplifiers at high-frequencies where the internal transistor capacitances are important.
    [Show full text]
  • Common Drain - Wikipedia, the Free Encyclopedia 10-5-17 下午7:07
    Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 Common drain From Wikipedia, the free encyclopedia In electronics, a common-drain amplifier, also known as a source follower, is one of three basic single- stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the transistor serves as the input, the source is the output, and the drain is common to both (input and output), hence its name. The analogous bipolar junction transistor circuit is the common- collector amplifier. In addition, this circuit is used to transform impedances. For example, the Thévenin resistance of a combination of a voltage follower driven by a voltage source with high Thévenin resistance is reduced to only the output resistance of the voltage follower, a small resistance. That resistance reduction makes the combination a more ideal voltage source. Conversely, a voltage follower inserted between a small load resistance and a driving stage presents an infinite load to the driving stage, an advantage in coupling a voltage signal to a small load. Characteristics At low frequencies, the source follower pictured at right has the following small signal characteristics.[1] Voltage gain: Current gain: Input impedance: Basic N-channel JFET source Output impedance: (the parallel notation indicates the impedance follower circuit (neglecting of components A and B that are connected in parallel) biasing details). The variable gm that is not listed in Figure 1 is the transconductance of the device (usually given in units of siemens). References http://en.wikipedia.org/wiki/Common_drain Page 1 of 2 Common drain - Wikipedia, the free encyclopedia 10-5-17 下午7:07 1.
    [Show full text]
  • Cascode Amplifiers by Dennis L. Feucht Two-Transistor Combinations
    Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination in the analog designer's circuit library combines a common-emitter (CE) input configuration with a common-base (CB) output. This article presents the design equations for the basic cascode amplifier and then offers other useful variations. (FETs instead of BJTs can also be used to form cascode amplifiers.) Together, the two transistors overcome some of the performance limitations of either the CE or CB configurations. Basic Cascode Stage The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. The voltage gain is, by the transresistance method, the ratio of the resistance across which the output voltage is developed by the common input-output loop current over the resistance across which the input voltage generates that current, modified by the α current losses in the transistors: v R A = out = −α ⋅α ⋅ L v 1 2 β + + + vin RB /( 1 1) re1 RE where re1 is Q1 dynamic emitter resistance. This gain is identical for a CE amplifier except for the additional α2 loss of Q2. The advantage of the cascode is that when the output resistance, ro, of Q2 is included, the CB incremental output resistance is higher than for the CE. For a bipolar junction transistor (BJT), this may be insignificant at low frequencies. The CB isolates the collector-base capacitance, Cbc (or Cµ of the hybrid-π BJT model), from the input by returning it to a dynamic ground at VB.
    [Show full text]
  • I. Common Base / Common Gate Amplifiers
    I. Common Base / Common Gate Amplifiers - Current Buffer A. Introduction • A current buffer takes the input current which may have a relatively small Norton resistance and replicates it at the output port, which has a high output resistance • Input signal is applied to the emitter, output is taken from the collector • Current gain is about unity • Input resistance is low • Output resistance is high. V+ V+ i SUP ISUP iOUT IOUT RL R is S IBIAS IBIAS V− V− (a) (b) B. Biasing = /α ≈ • IBIAS ISUP ISUP EECS 6.012 Spring 1998 Lecture 19 II. Small Signal Two Port Parameters A. Common Base Current Gain Ai • Small-signal circuit; apply test current and measure the short circuit output current ib iout + = β v r gmv oib r − o ve roc it • Analysis -- see Chapter 8, pp. 507-509. • Result: –β ---------------o ≅ Ai = β – 1 1 + o • Intuition: iout = ic = (- ie- ib ) = -it - ib and ib is small EECS 6.012 Spring 1998 Lecture 19 B. Common Base Input Resistance Ri • Apply test current, with load resistor RL present at the output + v r gmv r − o roc RL + vt i − t • See pages 509-510 and note that the transconductance generator dominates which yields 1 Ri = ------ gm µ • A typical transconductance is around 4 mS, with IC = 100 A • Typical input resistance is 250 Ω -- very small, as desired for a current amplifier • Ri can be designed arbitrarily small, at the price of current (power dissipation) EECS 6.012 Spring 1998 Lecture 19 C. Common-Base Output Resistance Ro • Apply test current with source resistance of input current source in place • Note roc as is in parallel with rest of circuit g v m ro + vt it r − oc − v r RS + • Analysis is on pp.
    [Show full text]
  • Dynamic Microphone Amplifier
    Dynamic Microphone Preamp Description: A low noise pre-amplifier suitable for amplifying dynamic microphones with 200 to 600 ohm output impedance. Notes: This is a 3 stage discrete amplifier with gain control. Alternative transistors such as BC109C, BC548, BC549, BC549C may be used with little change in performance. The first stage built around Q1 operates in common base configuration. This is unusuable in audio stages, but in this case, it allows Q1 to operate at low noise levels and improves overall signal to noise ratio. Q2 and Q3 form a direct coupled amplifier, similar to my earlier mic preamp . Input and Output Impedance: As the signal from a dynamic microphone is low typically much less than 10mV, then there is little to be gained by setting the collector voltage voltage of Q1 to half the supply voltage. In power amplifiers, biasing to half the supply voltage allows for maximum voltage swing, and highest overload margin, but where input levels are low, any value in the linear part of the operating characteristics will suffice. Here Q1 operates with a collector voltage of 2.4V and a low collector current of around 200uA. This low collector current ensures low noise performance and also raises the input impedance of the stage to around 400 ohms. This is a good match for any dynamic microphone having an impedances between 200 and 600 ohms. The output impedance at Q3 is low, the graph of input and output impedance versus frequency is shown below: Gain and Frequency Response: The overall gain of this pre-amplifier is around +39dB or about 90 times.
    [Show full text]
  • Cascode Techniques
    Analysis and Design of Analog Integrated Circuits Lecture 8 Cascode Techniques Michael H. Perrott February 15, 2012 Copyright © 2012 by Michael H. Perrott All rights reserved. M.H. Perrott Review of Large Signal Analysis of Current Mirrors Vdd Δ V2 I I 1 2 1 μ W2 2 λ nCox (VGS2-VTH) (1+ 2Vds2) I2 2 L = 2 I 1 W 2 1 μ C 1(V -V ) (1+λ V ) 2 n ox GS1 TH 1 ds1 M L1 2 ΔV M1 Vds2 > Vdsat2 1 V +ΔV V +ΔV Δ Δ Δ Δ Vss=0 TH 1 TH 2 But, VTH+ V1=VTH+ V2 V1 = V2 λ I2 W2 L1 (1+ 2Vds2) I2 = λ I1 W1 L2 (1+ 1Vds1) M2 in Saturation Current Mismatch setting due to Vds based on difference M2 in Triode geometry Note: for accurate ratio, set L1 = L2 Vds2 Vdsat2 M.H. Perrott 2 The Issue of Vds Mismatch in Current Mirrors V λ dd I2 W2 (1+ 2Vds2) = λ I1 W1 (1+ 1Vds1) I1 I2 Current Mismatch setting due to Vds based on difference geometry V V ds1 ds2 Note: we are assuming L = L M1 M2 1 2 . Issue: Current I2 can vary significantly as a function of the drain voltage of M2 - We often want a tightly controlled current set only by I1 and transistor sizes . How do we improve the current mirror matching performance? M.H. Perrott 3 Cascoded Current Source I Rth R ref d3 thd3 Ibias Vbias V M bias 3 M3 M ro1 2 M1 . Offers increased output resistance - Reduces small signal dependence of output current on the output voltage of the current source - From Lecture 6, we derived: .
    [Show full text]
  • CHAPTER 3 Frequency Response of Basic BJT and MOSFET Amplifiers (Review Materials in Appendices III and V)
    CHAPTER 3 Frequency Response of Basic BJT and MOSFET Amplifiers (Review materials in Appendices III and V) In this chapter you will learn about the general form of the frequency domain transfer function of an amplifier. You will learn to analyze the amplifier equivalent circuit and determine the critical frequencies that limit the response at low and high frequencies. You will learn some special techniques to determine these frequencies. BJT and MOSFET amplifiers will be considered. You will also learn the concepts that are pursued to design a wide band width amplifier. Following topics will be considered. Review of Bode plot technique. Ways to write the transfer (i.e., gain) functions to show frequency dependence. Band-width limiting at low frequencies (i.e., DC to fL). Determination of lower band cut-off frequency for a single-stage amplifier – short circuit time constant technique. Band-width limiting at high frequencies for a single-stage amplifier. Determination of upper band cut-off frequency- several alternative techniques. Frequency response of a single device (BJT, MOSFET). Concepts related to wide-band amplifier design – BJT and MOSFET examples. 3.1 A short review on Bode plot technique Example: Produce the Bode plots for the magnitude and phase of the transfer function 10s Ts() , for frequencies between 1 rad/sec to 106 rad/sec. (1ss / 1025 )(1 / 10 ) We first observe that the function has zeros and poles in the numerical sequence 0 (zero), 2 5 2 10 (pole), and 10 (pole). Further at ω=1 rad/sec i.e., lot less than the first pole (at ω=10 rad/sec), Ts() 10 s.
    [Show full text]
  • Optimal High Performance Self Cascode CMOS Current Mirror
    View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Global Journal of Computer Science and Technology (GJCST) Global Journal of Computer Science and Technology Volume 11 Issue 15 Version 1.0 September 2011 Type: Double Blind Peer Reviewed International Research Journal Publisher: Global Journals Inc. (USA) Online ISSN: 0975-4172 & Print ISSN: 0975-4350 Optimal High Performance Self Cascode CMOS Current Mirror By Vivek Pant, Shweta Khurana Kurukshetra University Kurukshetra Abstract - In this paper the current mirror presented, having low voltage and mixed mode structure has been proposed. The performance of self cascade MOSFET current mirror is optimized with high output impedance and can operate at 1 V or below. Simulation results conform to Analog Mentor tools having Design Architect for schematics and Eldonet for SPICE simulation, with input reference current of 20μA. This review paper presents a comparative performance study of self cascode current mirror with other current mirrors. Keywords : current mirrors, cascode current mirror, low voltage analog circuit. GJCST Classification : I.2.9 Optimal High Performance Self Cascode CMOS Current Mirror Strictly as per the compliance and regulations of: © 2011. Vivek Pant, Shweta Khurana.This is a research/review paper, distributed under the terms of the Creative Commons Attribution-Noncommercial 3.0 Unported License http://creativecommons.org/licenses/by-nc/3.0/), permitting all non commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Optimal High Performance Self Cascode CMOS Current Mirror Vivek Pantα, Shweta KhuranaΩ Abstract - In this paper the current mirror presented, having I = I (W/L) 2 (1+λVds2) (3) out ref low voltage and mixed mode structure has been proposed.
    [Show full text]
  • Notes on BJT & FET Transistors
    Phys2303 L.A. Bumm [ver 1.1] Transistors (p1) Notes on BJT & FET Transistors. Comments. The name transistor comes from the phrase “transferring an electrical signal across a resistor.” In this course we will discuss two types of transistors: The Bipolar Junction Transistor (BJT) is an active device. In simple terms, it is a current controlled valve. The base current (IB) controls the collector current (IC). The Field Effect Transistor (FET) is an active device. In simple terms, it is a voltage controlled valve. The gate-source voltage (VGS) controls the drain current (ID). Regions of BJT operation: Cut-off region: The transistor is off. There is no conduction between the collector and the emitter. (IB = 0 therefore IC = 0) Active region: The transistor is on. The collector current is proportional to and controlled by the base current (IC = βIC) and relatively insensitive to VCE. In this region the transistor can be an amplifier. Saturation region: The transistor is on. The collector current varies very little with a change in the base current in the saturation region. The VCE is small, a few tenths of volt. The collector current is strongly dependent on VCE unlike in the active region. It is desirable to operate transistor switches will be in or near the saturation region when in their on state. Rules for Bipolar Junction Transistors (BJTs): • For an npn transistor, the voltage at the collector VC must be greater than the voltage at the emitter VE by at least a few tenths of a volt; otherwise, current will not flow through the collector-emitter junction, no matter what the applied voltage at the base.
    [Show full text]
  • FJP2145 — ESBC™ Rated NPN Power Transistor MOS- (2) ™ March 2015 FDC655 FJP2145 S C G B Figure 3
    FJP2145 — ESBC™ Rated ESBC™ FJP2145 — March 2015 FJP2145 ESBC™ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description NPN Power Transistor (1) The FJP2145 is a low-cost, high-performance power VCS(ON) IC Equiv. RCS(ON) switch designed to provide the best performance when 0.21 V 2 A 0.105 Ω used in an ESBC™ configuration in applications such as: • Low Equivalent On Resistance power supplies, motor drivers, smart grid, or ignition • Very Fast Switch: 150 kHz switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exception- • Wide RBSOA: Up to 1100 V ally low on-resistance and very low switching losses. •Avalanche Rated ™ • Low Driving Capacitance, No Miller Capacitance The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC™ MOS- • Low Switching Losses FET is a low-voltage, low-cost, surface-mount device that • Reliable HV Switch: No False Triggering due to combines low-input capacitance and fast switching. The High dv/dt Transients ESBC™ configuration further minimizes the required driv- ing power because it does not have Miller capacitance. Applications The FJP2145 provides exceptional reliability and a large • High-Voltage, High-Speed Power Switch operating range due to its square reverse-bias-safe-oper- • Emitter-Switched Bipolar/MOSFET Cascode ating-area (RBSOA) and rugged design. The device is (ESBC™) avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The power switch is manufactured using a dedicated • Motor Drivers and Ignition Drivers high-voltage bipolar process and is packaged in a high- voltage TO-220 package.
    [Show full text]
  • Designing a Common-Collector Amplifier
    SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Tutorial #6: Designing a Common-Collector Amplifier BACKGROUND In the previous lab, you designed a common-emitter (CE) amplifier. Voltage gain (AV) is easy to achieve with this type of amplifier. As you discovered, the input impedance (Rin) of the CE amplifier is moderate- to-high (on the order of a few kΩ). The output impedance (Rout) is high (roughly the value of RC). This makes the common-emitter amplifier a poor choice for “driving” small loads. A common-collector (CC) amplifier typically has a high input impedance (typically in the hundred kΩ range) and a very low output impedance (on the order of 1Ω or 10Ω). This makes the common- collector amplifier excellent for “driving” small loads. As you discovered in Lab 6, the common-collector amplifier has a voltage gain of about 1, or unity gain. The common-collector amplifier is considered a voltage-buffer since the voltage gain is unity. The voltage signal applied at the input will be duplicated at the output; for this reason, the common-collector amplifier is typically called an emitter-follow amplifier. The common-collector amplifier can be thought of as a current amplifier. When the common-emitter amplifier is cascaded to a common-collector amplifier, the CC amplifier can be thought of as an “impedance transformer.” It can take the high output impedance of the CE amplifier and “transform” it to a low output impedance capable of driving small loads. Figure 1 shows a typical configuration for a common-collector amplifier.
    [Show full text]
  • BJT Small-Signal Model
    EE105 – Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu [email protected] 511 Sutardja Dai Hall (SDH) Lecture12-Small Signal Model-BJT 1 Introduction to Amplifiers • Amplifiers: transistors biased in the flat-part of the i-v curves – BJT: forward-active region – MOSFET: saturation region • In these regions, transistors can provide high voltage, current and power gains • Bias is provided to stabilize the operating point (the Q-Point) in the desired region of operation • Q-point also determines – Small-signal parameters of transistor – Voltage gain, input resistance, output resistance – Maximum input and output signal amplitudes – Power consumption Lecture12-Small Signal Model-BJT 2 1 Transistor Amplifiers BJT Amplifier Concept The BJT is biased in the active region by dc voltage source VBE. e.g., Q-point is set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 µA (βF = 100) Total base-emitter voltage is: vBE = VBE + vbe Collector-emitter voltage is: vCE = VCC – iCRC This is the load line equation. Lecture12-Small Signal Model-BJT 3 Transistor Amplifiers BJT Amplifier (cont.) If changes in operating currents and voltages are small enough, then iC and vCE waveforms are undistorted replicas of the input signal. A small voltage change at the base causes a large voltage change at collector. Voltage gain is given by: o Vce 1.65∠180 o Av = = o = 206∠180 = −206 8 mV peak change in vBE gives 5 mA Vbe 0.008∠0 change in iB and 0.5 mA change in iC. Minus sign indicates 180o phase 0.5 mA change in iC produces a 1.65 shift between the input and output V change in vCE .
    [Show full text]