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617
Index
a aluminum acceleration energy 272 – diffusion of 9 acceleration sensors 493, 510 – diode formation 11 accelerometer structure 209 aluminum-doped zinc oxide (AZO) 518 AC–DC-converter 482 aluminum penetration 30 acid etching 234 ambient assisted living (AAL) 540 actinic blank inspection 296 Ambient Intelligence Systems and Assistive active matrix (AMOLED) 516 Environments 576 actuators 55, 214, 402 ambipolar silicon-nanowires 334, 350 – artificial muscles 216 amplified resists 298, 313 – electrostatic, electromagnetic, and analog integrated systems 375 piezoelectric 214 analog-to-digital converter (ADC) 148 – pneumatic, phase change, and thermal anamorphic imaging techniques 301 actuators 216 ancillary activities 434 adaptive cruise control (ACC) 493 angular rate errors 422 adaptive power converters 483 angular rate sensors 422, 423 ad hoc process 342, 369 anisotropic etching techniques 208 – algorithms 352 annealing 191 – disposable sensors 544 anodic bonding 416 Advanced Communication Technologies and anomalous diffusion 274 Service (ACTS) 573 apnea-hypopnea index events (AHI) advanced driver-assistance system 463 (ADAS) 155 Apple A8 chip 73 advance plasma doping approaches Apple II 24 275 Apple iPhone 6, 510, 516 aging-aware logic synthesis 348 application-specific integrated circuit agrifood sector 451 (ASIC) 398, 572 Airbus of Chips 554 approximate logic synthesis (ALS) 352 air quality 540, 541 – SALSA, template uses 352 air traffic management 383 APT. see atom probe tomography aka Moore’s law 317 architectural decomposition 378 ALD benefits 278 architecture analysis 385 – composition control 278 architecture design 387 – conformality 278 Ar ions beam processes 282 – thermal budget 279 artificially constrain 371 AlGaN/GaN system 187 artificial molecular motors 218 – buffer 187, 194 artificial systems 205 – interface 186 aspect ratio trapping (ART) 104 algebraic transformations 338 assisted living 460
Nanoelectronics: Materials, Devices, Applications, First Edition. Edited by Robert Puers, Livio Baldi, Marcel Van de Voorde, and Sebastiaan E. van Nooten. 2017 Wiley-VCH Verlag GmbH & Co. KGaA. Published 2017 by Wiley-VCH Verlag GmbH & Co. KGaA. BINDEX 03/17/2017 16:25:37 Page 618
618 Index
Atomic force microscopy bipolar junction transistor (BJT) 7, 16, 131, – nanoprobe sweeping 270 176, 182 atomic layer deposition 277 bipolar memories 131 atomic layer epitaxy 277 bipolar technology 19 atomic layer etching (ALE) 284, 285 birefringence 290 atom probe tomography (APT) 246, 250 bisimulation 388 Auger electron spectroscopy (AES) 32-bit adder, switching energy 44 – depth profiling 258 bit cell 88 autarkic sensor nodes 539 bit-cost scalable (BiCS) 119 autofocus camera modules 399 BJT. see bipolar junction transistor (BJT) autofocus sensing 464 blech effect 322 automata-based formalism 381 block copolymers 302, 309 automated cyber-physical systems 489, 490 blood cell analysis 463 – societal challenges 490 bluetooth 503 automated theorem 383 body fluid assessment 461 automatic control 364 body sensor network 458 automatic identification and data capture bolometer detector 211 (AIDC) 532 Boltzmann’s constant 158 automatic logic synthesis 352 Boolean function 338 automatic test equipment (ATE) 433 Boolean gates 438 automatic test pattern generation (ATPG) 431 Boolean network 338 automation 373 – algebraic expressions of logic function 338 – automotive electronics 57 – model 338 – automotive embedded systems 385 – optimization 339 autonomous driving 57 Boolean relations (BR) 352 autonomous vehicles 593 Boolean techniques 341 boron Coulomb effect 236 b boron diffusion 274 bachelors programs 603, 608 boron-implanted region 273 back end of line (BEOL) 126 Bosch BMX055, 510 back-end processing 267, 489 Bosch Sensor Swarm approach 532 back metallization 175 BOX SOI substrate 94 backside analysis 258 BOX thickness 92 ballistic transistors 101 Bragg geometry 246 band-to-band tunneling (BTBT) 143 Bragg reflectors 295 BASIC language 25, 26 braking energy 164 batteries bridge fault model 430 – energy management of 164 British health care think tank 457 – operated devices 459 broadband terahertz detectors 161 beam line implanters 274 BTI. see bias-temperature instabilities (BTI) behavioral modeling 370 buffer-induced dispersion 197 – SiNW and graphene p–n junction 356 built-in self-test (BIST) 432 Beyond CMOS 583 – architecture 432 bi-directional energy flow 483 – logic 433 Big Data 452, 494 bulk transistor 89 Bill Gates 26 buried-channel-array-transistor (BCAT) 117 binary decision diagram (BDD) 356 buried oxide (BOX) 91 biochemical signals 205 biochips 588 c biomedical chips 57 CAD. see Computer-aided design (CAD) biophotonic sensors 576 CAGR. see compound annual growth rate biosensors 148, 213 (CAGR) biosignal sensors 459 call emergency services 461 BINDEX 03/17/2017 16:25:37 Page 619
Index 619
cancer chemisorption 285 – point of care 462 chemoepitaxy 302, 303 capacitances, in MOSFET structure 83 chronic disease management 457 capacitive actuation 215 circuits 536 capacitive sensing 214 – densities 318 capacitors – design 317 – banks 472 – performance 317 – quality factor 159 –– driven requirement 321 carbon 232 cloud computing paradigm 467 carbon based RRAM 129 clustered sleep transistor insertion 344 carbon dioxide emissions 541 CMOS. see complementary metal-oxide- carbon nanotube (CNT) 442, 504 semiconductor (CMOS) carrier mobility 327 CMOSFET. see complementary metal oxide carrier transport 89 semiconductor (CMOS) carrying gas 269 CNTFETs. see CNT field effect transistors car-to-car links 57 (CNTFETs) car-2-x communication 542 CNT field effect transistors (CNTFETs) 442
cascode 192 CO2 emissions 482 cassettes 236 cognitive technology 590 CATRENE organization 549 cold filament 4 CAVET. see current aperture vertical electron colloidal silica 234 transistor (CAVET) color electrochromic displays 518 CBD. see contract- based design (CBD) commercial motion processing unit chips 511 CBL. see current-blocking layer (CBL) Commission’s Research Framework CD. see critical dimension (CD) Programme 570 cell displacement defect 441 communication 56, 449, 452, 453, 503, 536 cell footprint 119 – devices 161, 567 cell library 338 – means 55 cell misalignment defect 441 – network 449 cell omission defect 441 – technologies 473 cell organization 130 – with traffic lights 57 cell pitches 167, 169, 170 complementary metal-oxide-semiconductor cell-to-cell interference 120, 123 (CMOS) 28, 39, 84, 102, 118, 122, 164, 165, cell-to-cell variability 121 167, 271, 351, 397, 510, 595 center gate (CG) 354 – based circuits and systems, types of variability central energy management 473 in 345 chalcogenide-based electrolyte (CBRAM) 127 – blocks 344 channel bandwidth 154 – challenges and opportunities 156 channel capacity 154 – device scaling prediction 76, 88 charge carrier layer 75 – image sensor technology 513 charge coupled device (CCD) 513 – logic – sensors 513 –– activities 575 charge/discharge cycle 506 –– device, low-power mobile and multimedia charge incorporation 191 applications 88 charge-trapping layers 119 –– speed performance 80 chemical and biological MtM devices 59 – nodes 78, 100, 159 chemical instability 145 – pixel 149 chemical–mechanical polishing 345 – projects, mapping of FP7 and H2020, 585 chemical microsystems 576 – sensor cleaning 270 chemical reactive sputtering 282 – technologies 28, 39, 53, 77, 85, 98, 103, 292, chemical sensors 451 334, 615 chemical vapor deposition (CVD) 147, 196, –– area and delay optimization 335 228, 275 –– gate to channel capacitance 78 BINDEX 03/17/2017 16:25:37 Page 620
620 Index
–– limitations of 437 cosmic ray 182, 325 –– multilevel optimization 337 cost-effective ICs 18 –– sequential synthesis 339 Coulomb interaction 77 –– speed performance metrics 78 coupling-faults, definition 442 –– switching delay formulation 78 covalent bonding 238 –– two-level logic minimization 336 CPS. see cyber physical system (CPS) – terahertz circuit blocks 160 CPU 74, 113 – transistors 50 critical dimension control, plasma etching complex sensor fusion algorithms 494 limitation 281 component compatibility 377 crossbar array architectures 441 component consumption cross-cutting paradigm 373 – by market segment 560 cross-discipline applications 605 compositional analysis 257, 386, 389, 390 cross-programme action (CPA) 574 compound annual growth rate (CAGR) 489 cryogenic 269 computational complexity 384 crystallization process kinetics 254 computational imaging 211 crystal-originated particles (COPs) defects computational power 22 236 computation tree logic (CTL) 383 CTL. see computation tree logic (CTL) compute clusters 364 Cu conductors computer-aided design (CAD) 333, 572 – reliability 320 – commercial tools 343 Curie temperature 251 computer engineering 597 current aperture vertical electron transistor concurrency 367 (CAVET) 188, 189 conductive bridge (CBRAM) 127, 128 current-blocking layer (CBL) 188 conductive filament (CF) 126 current-carrying capability 318 congestive heart failure (CHF) 461 current density 321 connected vehicle 491 current fitness trackers 465 consumer applications 57, 501, 502, 508 current-induced magnetic field 123 – D materials/flexible electronics 502 current-limiting design rules 321 contact lens CVD. see chemical vapor deposition (CVD) – integrated LCD display 465 cyber physical system (CPS) 363, 364, 390, 473, contamination reduction 268 489, 532, 533 continuous abstraction 382 Czochralski growth method (CZ) 228, continuous optimization engine 387 229, 230 contour metrology 300 contract-based design (CBD) 373 d contract composition 377 damascene trench barrier layers 318 control algorithms 365 3D analysis techniques 246 control design 388 dangling bonds 5, 44 controllable-polarity (CP) 443 dark-field holography (DFH) 251, 252 controller equations 388 dark silicon 50, 139 controller synthesis 388 Dash neck method 231, 232 control theory 598 data analysis techniques 605 control units, additional requirements 495 data dependencies 379 convergence applications 115 data/information chain 545 cooling filament 4 data processing 55 CoolSiC 180 data security 546 co-op programs 602 3D chip stacking 423 copolymers 302 DC power consumption 158 Core Partners Program 38 DE. see discrete-event (DE) Coriolis effect 210 decentralized microgrids 471 correctness of connections 369 deep trenches 172 cosimulation 389 defect density 306 BINDEX 03/17/2017 16:25:38 Page 621
Index 621
defect engineering 273 dislocation density 187 defect level (DL) 429 dispersion phenomena 195 defects 427, 443 display technologies 515 defects per million (DPM) 429 DMOS 165, 166, 169 Defense Advanced Research Projects Agency 3D NAND architectures 119 (DARPA) 32 domain-specific languages (DSL) 382 2-DEG. see two-dimensional electron gas dopants 147, 175, 232, 236, 271–273, 275 (2-DEG) double-disk grinding (DDG) 234 delay fault models 430, 433 double-gate devices 93, 443 demographic evolution 455 double patterning 281, 321 Dennard’s equations 18 – flow 291, 292 Dennard’s scaling 34, 36, 39 double-side polishing (DSP) 234 – equations 241 3D power scaling 48 – laws 18 3D printing 589 – rules 20, 139 drain-induced barrier lowering (DIBL) Department of Energy (US-DOE) 449 80, 97 design for manufacturability (DFM) 346 – versus Leff 94 design for testability 428 – reduction 80 device under test (DUT) 433 – TBOX, simulation of 92 DFH. see dark-field holography drain outreach 38 DG/FinFET devices 94 DRAM 17, 26, 116, 131 3D horizontal cross-pointTM memory 133 – architectural methodology 18 3D horizontal ReRAM – basic schematic 116 diborane 236 – cell capacitance 118 dielectrics 280 – cell capacitor 118 – constant materials 318 – demise 31 – electrostatic charging of 407 – devices 117 – etching chemicals 280 – die size trend 22 – parasitic charging of 405, 407 – unit volume production 25 – porosity 319 drift resistances 165, 169 – refill 171 dry etching 280 – reliability 319 – pattern transfer 314 digital factories 545 drying techniques 269 digital functionality 54 DSA. see directed self-assembly (DSA) digital information processing 58 2D scaling, physical limits 45 digital integrated circuits 371 DTCO. see design-technology co-optimization digitalized society 590 (DTCO) digital lifestyle 56 dual epitaxy 172 digital memory 114 dummy-gate device, STEM image digital mirror device 215 253 digital MOS circuit 53 3D vertical RRAM structure 132 digital power management 485 dynamic energy demand 483 digital products 568 dynamic or switching power 340 digital signal 55 dynamic power 340 digital technology 141 – for CMOS gate 340 digitization 531, 537 – dissipation 85 dim chip 140 dynamic toll systems 541 directed self-assembly (DSA) 292, 294, 302, 303, 304, 307 e discrete abstractions 388 e-beam maskless lithography 309 discrete-event (DE) 382 echocardiography 461 discrete power devices 164, 165 EDA. see electronic Design design disease monitoring 462 Automationautomation (EDA) BINDEX 03/17/2017 16:25:38 Page 622
622 Index
educational partnerships 606 electrowetting 518 EELS. see electron energy loss spectroscopy embedded automation systems 489 E-ink, eReader products of 517 embedded integrated circuits 409 elastomer 399 embedded memories 133 electrical and thermal energies 539 – in microcontrollers and digital signal electrical defects 271 processors 124 electrical energy 472, 483, 535 embedded sensor fusion 363 electrical engineering 597 emerging devices, silicon NWFET 355 electrically sensitive hydrogel 217 emerging memories 127 electrical resistance 212 – architectures 130 equivalent oxide thickness (EOT) 37 – devices 245 electric cars 541 – storage class memory 133 electric/electronic systems 473 – technologies 120 electric field failure time model 319 emerging wearables 459 electric lighting 3 EMI. see electromagnetic interference (EMI) electric vehicles 163 emitter pipes 19 – electrified trucks 489 E-mode 191, 192 electrochromic materials 518 EM simulations 161 electromagnetic forces 207 encapsulations 409 electromagnetic interference (EMI) 402, end-of-manufacturing 436 409 energy bands 4 – risk of 407 energy consumption 163, 471, 532, 536 electromagnetic wave 59 energy dispersive X-ray spectroscopy electromechanical switching 144 (EDS) 246 electromigration 322 energy efficiency 141, 149, 451, 520 electron-beam lithography 598 – algorithms 536 electron diffraction 252 – computing/sensing technologies, electron energy loss spectroscopy (EELS) convergence 148 246 – trajectories 491 electron holography 259 energy flow 483 electronic circuits 537 energy generation 471, 473, 538 Electronic Components and System for energy grid 472, 473 European Leadership (ECSEL) 554 energy harvesting 459, 508, 537 electronic control unit (ECU) 436 – applications 481, 484 electronic design automation (EDA) 333, 365 energy management 364, 483 – tools 427 – systems 471, 480 electronic devices energy-saving aspect 538 – continued scaling of 370 energy-saving lighting technology 164 – manufacturing 437 energy scaling requirements 142 electronic grade polysilicon energy storage 506 – production of 228 – system 503 electronic grade silicon 226 energy supply 471, 534 electronic industry 568 energy systems 473, 483 electronic readers (eReaders) 517 – of electric vehicle 482 electronic security systems 546 environmental gas analyzers 514 electronic skin 459 environmental issues 471 electron tomography (ET) 246, 250 environmental monitoring 567 electro-optic lenses 464 epitaxial growth process 165, 170, 177, 184 electrorheological fluids 216 EPoSS technology platform 580 electrostatic actuators 214 error coding 435 electrostatic discharges (ESD) 408 – correction codes 118 – risk of 407 ESD. see electrostatic discharges (ESD) electrostatic doping 355 e-society 57 BINDEX 03/17/2017 16:25:38 Page 623
Index 623
etching 267, 345 eutectic bonding 416 – existing solutions 284 EUV. see extreme ultraviolet (EUV) Eureka 557, 569, 570, 588 EUVL. see extreme ultraviolet lithography European budget, for research/innovation (EUVL) activities 571 evidence-based algorithms 591 European Commission 449, 554, 615 EXNOR 357 European consumption 559 EXOR, boolean comparator 357 – of electronic components 560 exponential complexity 388 European Fund for Strategic Investment exposure wavelength 290 (EFSI) 558 extended X-ray absorption fine structure European funding of research and innovation (EXAFS) 256 programs 567, 569 extremely thin SOI (ETSOI) 92 – ESPRIT 572 extreme ultraviolet (EUV) 119, 297 – FP7 and H2020 581 – anamorphic imaging 302 – H2020 (2014-2020) 579 – insertion into N7, 298 – ICT Research in FP 582 – lithography 119, 309 – micro/nanoelectronics and smart extreme ultraviolet lithography (EUVL) 294, systems 582 299, 300, 301 – nanoelectronics integrated hardware – extendibility 301 perspective 571 – insertion 294, 301 – nanoelectronics/micro-nanotechnology – patterning 299 570 European general educational practices 609 f European Industry, overview of 553 Facebook 449 European Investment Bank manages 558 FACTS/HVDC-systems 486 European leaders 561 failure mechanisms 410 European manufacturing capacities 563 failure times 319, 321 European market share 561 fast access cache memory 114 – consumption 559 fault collapsing 440 – supply 560 fault coverage FC 429 European parliament 569 fault-free products 428 European policy makers 563, 565 fault models 427, 429 European private sector 565 – definition 439 European Regional Development Fund fault simulation 439 (ERDF) 558 FDSOI. see fully depleted silicon on insulator European Research, Development and (FDSOI) Innovation Programme 449 ferroelectric material 121 European Research Policy 575 ferroelectric memories 120, 121 European semiconductor companies and ferroelectric polarization RRAM 129 institutes 572 ferroelectric RAM (FeRAM) 120–122 European strategic initiatives 554 ferroelectric thin films 251 – combining instruments 555 fetal health 466 – ECSEL Joint Undertaking 554 fiber extension 155 – European Commission 554 fiber optic gyroscopes 402 European Structural and Investment Fund field-assisted superlinear threshold (ESIF) 558 (FAST) 131 European Technology Platform (ETP) 554, 577 field-effect transistor 176 European Union (EU) 553 – at Bell Labs 6 – budget of Member States in 2014, 559 – sensors 148 Europe’s market position 558 field emission display (FED) 517 EUROPRACTICE IC project 589 field plate (FP) 196 EUROPRACTICE microsystem program field-stop (FS) 173 574, 575 fine-tuning production techniques 508 BINDEX 03/17/2017 16:25:38 Page 624
624 Index
FinFET 90, 93, 94, 96, 99 – technology 93 FinFET sensor characteristics, full-scale pH Future and Emerging Technologies (FET) 574, influence 149 579, 585 finite state machine (FSM) – negative capacitance 150 – decomposition 342 future technology nodes 322 – model 339 FZ growth method 232 – and sequential circuit implementation 339 FZ techniques 229 fin pitch (FP) – versus technological node 96 g flash anneal 274 1G 153 flash memory producers 46 2G 153 flash NAND 132 3G 153 flip chip assembly 416 4G 153 flip-flop configuration 48, 117, 431 5G 153, 154 flip-type IGBT 183 GAA. see gate all around floating gate memories 253 galium nitrate (GaN) floating gate transistor 17 – bandgap 195 float zone (FZ) technique 228 – bulk substrate 200 fluorine codoping 273 – device 188 fluorine doped tin oxide (FTO) 518 –– material and physics 184 Focus Center Research Program (FCRP) 36 – HEMT 195 food chain 451 – layer 195 fossil fuels 471 – on-Si technology 193, 197 Fourier transform infrared spectroscopy – power device 184 (FTIR) 256 – power semiconductors 199 FP7/H2020, beyond CMOS 586 – power transistors 193, 194 FP7 project 585 – technologies 157, 197 – displaying EU bias 582 – transistors 191, 192 – DUALOGIC 588 – trench 189 – and ENIAC JU programmes 583 – vertical devices 189 – funding 581 – wafers 188 FP88 project 585 gallium nitride (GaN) 198, 536 Framework Programs 582 GaN. see galium nitrate (GaN); gallium nitride – European Research 569 (GaN) – FP7 budget 581 5G, and high-performance computing free space path loss (FSPL) 154 ASO 593 free-standing IGBT 183 GaSb 104 free-wheeling diodes 179, 180 gas-sensing technology 212 front collision warning (FCW) 493 gate all around (GAA) 249, 273 front-end process 267 – transistors 13, 96 – cleaning 268–270 gate charge 169 – deposition 275–279 gate density requirement 100 – etching 279–285 gate dielectric layer 77 – silicon oxidation 271 gate dielectric stack 322 frozen gas particles 269 gate electrode architecture 98 FS. see field-stop (FS) gate field plate 196 full-adders (FA) 353 gate first approach 98 fully depleted silicon on insulator (FDSOI) 90, gate leakage current 322 272, 561, 564, 584 gate mask, inevitable misalignment 14 – capacitance breakout for 98 gate oxide – device 92 – partial nitridation 271 – planar 281 – scaling 1997 NTRS 35 – structure 91 – thickness 87 BINDEX 03/17/2017 16:25:38 Page 625
Index 625
gate replacement 342 HDL. see hardware description language (HDL) gate–stack deposition HDMI services 155 – on Ge channel 104 health care expenditure 456 gate-to-epitaxy capacitances 98, 99 health care system 455 – parasitic capacitance effect 98 health monitoring 219 gate voltage 75, 76, 141 HEMT. see high electron mobility transistor Gbitp MTJ arrays 124 (HEMT) GDP/economic exchanges 592 heteroepitaxy 200
GdTiO3 145 heterogeneous system 382, 397 generic modeling 385 – calibration of 420 geometrical phase analysis (GPA) 251 – design 400, 401, 402, 403 geometrical scaling 291 –– analysis 401, 402 germanium 103 –– assembly and testing 403, 412 – transistor effect 225 – failure mechanisms in 411 germanium-antimony-tellurium – integration 48, 414 (GeSbTe) 124, 125 – packaging 414, 418 gestational diabetes 466 – processing 576 Ge, transport parameters for 103 hexagonal boron nitride (hBN) 502
GIXRD configuration 255 HfO2–TiN interface 258 glassy silicon dioxide 9 HF vapor 269 Global Foundries 564 – removal 271 global positioning satellite (GPS) 504 high electron mobility transistor (HEMT) – receiver 460 187, 195 – sensors 496 – FET hybrid 192 Glucodoc 463 – transistors glue dispensing process 420 –– fabrication of 191 gold nanoparticles 512 high energy efficiency 538 gold-standard PSG testing 463 high-energy self-ion implantation 273 gold wires 6, 11 high-temperature annealing process 272 goniometer 253 high-voltage blocking 178 Gordon E. Moore 13 high-voltage power semiconductors 542 GPA. see geometrical phase analysis (GPA) high voltage transmission 479 graphene 502, 519 high-volume manufacturing (HVM) 31, – nanoribbons 334 33, 298 – p–n junctions 350, 354, 355 HIL. see hardware-in-the-loop (HIL) graphene nanoplatelet paper (GNP) 505 H2020 LEIT 585 grapho-epitaxy 302, 303 HMOS II generation 30 grazing incidence 255 homoepitaxy 200 green economy 452 honeycomb structure (HCS) 119 greenhouse gas 451 Hook’s law 238 grid interface 164 Horizon 2020 program 449, 580 GSM telephony 565 – as societal challenges for Europe 450 GW. see gigawatt (GW) horizontally stacked 3D RRAM (HRRAM) gyroscope 210, 459 architecture 132 hot-carrier (HC) 322 h HR-TEM corresponding image 259 Hamming distance 342 4H-SiC layers 183 hard disk drive (HDD) 115 4H-SiC wafers 177 hard-switching circuits 173 humanity 589 hardware description language (HDL) 371 humidity 540 hardware-in-the-loop (HIL) 497 HVM. see high-volume manufacturing (HVM)
H2 bake cycle 236 HW/SW codesign 575 HC. see hot-carrier (HC) hybrid CBRAM devices 128 BINDEX 03/17/2017 16:25:38 Page 626
626 Index
hybrid linear temporal logic with – support for logistics 546 expressions 382 Information Society (IST) hybrid solutions 437 – ICT projects 588 hybrid vehicles 163 – program 574 hydrofluoric acid 280 information society tools 452 hydrogen contamination Infrared SNOM 256 – in back-end process 121 infrared spectrometry 212 hydrogen-to-oxygen ratio 29 InGaAs alloys 104 hyperconnected world 590, 591 InGaN quantum well blue LED 515 hyperpure silicon 227, 228 innovation capacity 449 hypertension 463 innovative logistics strategy 544 hysteretic characteristics 145 inorganic LED point source 69 inorganic resist 298 i in-plane switching (IPS) 516 Ibbetson theory 186 InP technologies 157 IBM 26, 32 in’situ thermal annealing 255 IBM360, 614 insulated gate bipolar technology (IGBT) IC. see integrated circuit (IC) 165 idealstacked nanowire transistor insulated gate bipolar transistor (IGBT) 173 – schematic of 96 insulators 271 IEEE RC 51, 52 integrated algorithm framework 442 IEEE Rebooting Computing Organization 50 integrated circuit (IC) 11, 15, 164, 205, 225, IEEE 1500 standard 433 289, 290, 333, 397, 409, 427, 473, IGBT. see insulated gate bipolar technology 483, 537 (IGBT) – degradation mechanisms 317 illumination-related effects 274 – economical advantages 13 image sensors 211, 463 – fabrication, doping technique 272 immersion liquid 290 – failure mechanisms 320 immersion lithography 291, 293, 295, 306, 309 – fundamental building blocks 47 immersion multiple patterning 299, 302, 307, – manufacturing 268, 271 309, 311 – packaging technology 397 IMOS devices 143 – Robert N. Noyce 12 impact ionization 143 – transistor effect 51 IMU 421 integrated power devices 164 incentive programmes 553 integration density 53 in-depth electrical characterization 252 Intel 8080, 24 indium tin oxide (ITO) 518 intellectual property (IP) 353, 371, 433 indoor communication 540 intelligent activity tracker 461 indoor lighting 540 intelligent energy management 473 Industrial and Materials Technologies intelligent environment 219 (IMT) 573 Intel’s DRAM business 28 industrial automation 57 interconnect capacitance 318 industrialization 471 interconnection technology 219 Industry Strategic Symposium (ISS) 37 interconnect reliability issues 318 inert gas flash 278 inter-diffusion phenomena 256 inertial measurement unit (IMU) 398 interlayer (IL) 256 in-field test 436 intermodal transportation 490 info-bio-nano-cogno field 588 internal gettering (IG) 240 information and communication technology internal transduction 143 (ICT) 531 internal voltage amplification 143 – infrastructure 535 International Electron Devices Meeting – program 572 (IEDM) 20, 21 – related technologies 545 International Energy Outlook 472 BINDEX 03/17/2017 16:25:39 Page 627
Index 627
International 300 mm Initiative (I300I) 33 Joint Undertaking (JU) 555, 558 International Nanotechnology Conference on junction barrier Schottky (JBS) 179 Communication and Cooperation (INC) 42 junction field-effect transistor (JFET) 180 International Roadmap for Devices and junction termination extension (JTE) 179 Systems (IRDS) 49, 51, 534 International Technology Roadmap for k Semiconductor (ITRS) 34, 76, 534, 584 key enabling technologies (KET) 449, 554, 577, International Technology Roadmap for 615 Semiconductors (ITRS) Kirk effect 182 – ITRS 2.0 49, 51 – roadmap 324 l Internet of Everything (IoE) 140, 148, 154 lane change assistant (LCA) 492 Internet-of-Nano-Things concept 515 lane departure warning (LDW) 493 Internet of Thing (IoT) 55, 57, 154, 334, 370, lane keeping assistant (LKA) 493 450, 453, 459, 514, 532, 534, 586, 588, 593 Langmuir-Blodgett deposition 279 – driving force for smart cities and Laplace force 270 semiconductors 535 lapping 234 – under FP7 and H2020, 587 Lars’ brain registers stress 465 internship programs 602 Lars’ prostate problem 463 interpoly dielectrics (IPD) 118 laser interstitial adsorption 274 – annealing 175, 274 interstitial fluids 466 – beam scans 274 interstitials annihilation 273 – irradiation techniques 270 intraocular lens 464 – melting 274 invasive catheters 461 – produced plasma (LPP) 294 in-vehicle software 496 – pulses 270 inversion coefficient (IC) 156 lateral power devices 167 inverted temperature dependence (ITD) 347 Laue microdiffraction 251 inverter layout optimization solution 118 – delay 79 leakage power 343 – parasitic capacitances of MOSFET – of CMOS 139 devices 79 – in CMOS gate 343 – switch, parasitics capacitance in logic leakage problems 38 devices 81 LEIT addressing industrial inverter chain 82, 84 competitiveness 580 Io-E requirements 150 LG G-series 516 ion beam curing 313 Li batteries 507 ion bombardment 283, 284 LiDAR sensors 493 ion-hosting capacity 507 light-emitting diodes (LED) 69 ionic gating liquids 145 light illumination 19 ionic polymer metal composite 216 lighting 539 ion implantation 174, 179, 182, 272 Li-ion/nanostructured battery systems 509 ion-induced perturbation thickness 284 linear temporal logic (LTL) 382 IP. see intellectual property (IP) line edge roughness (LER) 297, 311, 312, 320 iPhone 6 smartphones 73 LiNe process flow 304 irredundant threshold networks 440 linewidth roughness (LWR) 311 ISFET sensor 148 liquid crystal display (LCD) 516 isothermal annealing 254 liquid gate technology 148 – FinFET ion sensor, cross section of 149 j liquid phase epitaxial 274 Johnson–Nyquist theorem 141 Lisbon European Council 554 Joint Technology Initiative (JTI) 577 lithium-ion cells 482 – JTI ECSEL 570 litho-etch (LE) 291 BINDEX 03/17/2017 16:25:39 Page 628
628 Index
litho-etch-litho-etch (LELE) 291 Mbit Ag/GeS2 CBRAM memory core 129 lithography 267, 345 64 Mbit DRAM memory devices 33 – imaging 292 mechanical coupling 407 – insertion 314 mechanical forces 205 – pitch scaling in 292 mechanical noise 207 – projection lenses used in 290 mechanical parameters 59 – technologies 205, 320 mechanical sensors 207 local atomic density 250 – gyroscopes and accelerometers 209 local energy management systems 473 – pressure sensors and microphones 208 local field enhancement 320 – resonators 210 local magnification effect 250 medical imaging 211 local oxidation of silicon (LOCOS) 19 medium energy ion scattering (MEIS) 252 logic equivalence checking (LEC) 442 megabit memory generation 46 logic function 439 memory-centric architecture 114 logic gates 23 memory devices 27 logic standard cell 292, 300 memory hierarchy, evolution 114 logic storage elements 326 memory market 115 logic synthesis 334, 347 memory producers 46 – for approximate computing 351 memory products 27 – for manufacturability and PV memory reliability 119 cmpensation 346 memory technologies 113, 114 – and optimization, emerging trends in 350 – computing systems 113 – strategies, taxonomy of 335 – data-intensive applications 113 – tools 334 merged PiN Schottky (MPS) 179 lower electron temperature 284 metal capping layers 321 low-noise amplifier (LNA) 156 metal gate 148 low-power (LP) market 74 – stack 249 metal-insulator-metal (MIM) 126 m metal-insulator transition (MIT) 143, 145 macromolecular memory 129 – FETs 150 magnetic core memories 23, 120, 122, 230 metallic CNTs 442 magnetic memory (MRAM) 122 metallic mobile charge 145 magnetic tunnel junctions 350 metallurgical silicon maneuvers lane changing 494 – production 226 manually driven vehicles 496 – purification of 227 manufacturing readiness levels (MRL) 583 metal nano-wire based transparent manufacturing technologies 205 conductor 519 MapperLithography 310 metal oxide nanoparticle resist 298 mapping 373 metal oxide semiconductor field effect – specifications to implementations 386 transistor (MOSFET) 166, 169, 172, 502 marangoni/rotagoni drying 270 – device 84 March algorithms 431 –– parasitic capacitances 79 maritime traffic flow 490 – electrostatics 80 market share, of leading companies 562 – leakages 85 Mark-8, microcomputer design 24 – optimization 88 mask handling 296 – planar bulk MOSFET, TEM cross section 75 MASTAR model 76 – structure Masters programs 603 –– capacitances of 84 material phase transition 143 – structures 89 material properties 363 – technology performance evaluation 79 material removal system 279 – threshold voltage 76 maternal/fetal parameters monitoring 467 – transistor 73, 75, 80, 81, 87 mathematical optimization software 382 metal resistance 322 BINDEX 03/17/2017 16:25:39 Page 629
Index 629
metronomy 378, 389 mobile Internet device (MID) 74 mHealth 460 mobility and transport, in smart city 541 microactuators 207 mobility applications, of smart energy micro- and nanoelectromechanical systems systems 482 (MEMS/NEMS) 49, 59, 205, 363, 397, 404, model- based design (MBD) 365 451, 503, 586, 614 model for advanced semiconductor roadmap – actuator 400 (MASTAR) 76 – advantages 206 modeling languages 385 – based sensors 586 model-in-the-loop (MIL) 497 – holistic approach 581 molecular beam epitaxy 147 – market trends 207 molecular doping 274 – microreflector technologies 515 molecular layer deposition (MLD) 275 – MOEMS and Miniaturized Systems 573 molecular monolayers doping 275 – processing 269 molecular motors 217 – silicon-integrated 588 molecule bond breaking 275
– tuning fork resonator 504 molybdenum disulfide (MoS2) 502 microcomputers 24 monitor communication 540 microdevices 215 monitoring simulation 389 microelectronic products 54, 397 monocrystalline silicon 237 microelectronics 271, 450, 536, 613 – crystal structure 237 – industry 53 – defect kinetic behavior 240 – structures 247 – doping 237 microenergy grid 473, 480 – ingots 228 microfluidics 206, 462, 588 – intrinsic defect categories 239 – devices 55 – production 229 – platform 213 – silicon dioxide 238 microhydraulic actuators 216 monolayer deposition techniques 279 micromechanics 588 monolithic integrated microsystems 573 micro-nanoelectronics 537, 539, 568, 592 monolithic microwave integrated circuit micro-nanosystems 568 (MMIC) 504 micro-nanotechnology 568 monostable–bistable transition element microprocessors 50 (MOBILE) 439 micropumps 206 Moore's law 20, 33, 34, 40, 45, 51, 53, 54, 73, microrobotics. 588 118, 156, 229, 241, 280, 291, 333, 397, 428, microscale energy transducers 484 458, 502, 584 microscale sensors 219 – for micro-nanoelectronics 70 microscopic sensor 364 – revolutionary and scalable technologies 51 microsystems 207, 397, 588 – vision, validation of 229 microvalves 206 More Moore domain 595 mid-wavelength infrared (MWIR) 506 More-than-Moore 54 miniature gas sensors 212 – devices 58 miniaturization 53, 54, 409, 486, 537, 567 –– application domains 61 – capabilities 280 –– industrial applications 67 – program 568 –– powering 59 miniaturized system 533 –– safety and security 65 minimum voltage supply, limitation of 87 – photodetector 56 misaligned carbon nanotubes 442 – technologies 55, 60, 70 MISHEMT 188 morphing 52 mixed integer linear constraints 384, 387 MOS channel noise factor 158 mixed-ionic-electronic conduction (MIEC) 131 MOS circuits 16 mixed valence oxide RAM 129 MOS device 5, 117, 131 mobile devices 460 – of Shockley’s dreams 15 mobile health 460 MOS process 29 BINDEX 03/17/2017 16:25:39 Page 630
630 Index
MOS transistor 8, 11, 14, 16, 18, 34, 54 – foundational research and disciplines 597 – p- and n-channel 28 – future comprehensive university MOS yields 20 programs 607 motion processing unit (MPU) 510 – hardware challenges 546 Mott transition RAM 130 – manufacturing processes 212 MP3 players 49 – related degree programs 602 MRI tomography 614 – research clusters 570 MtM devices/technologies for sensing/ – as smart energy systems 483, 533, 545 actuating – standardizing holistic education 609 – potential taxonomy of 60 – technologies 602, 604 MtM technologies 58 Nanoelectronics Research Initiative (NRI) 42 mulitenergy smart grid 477 nanofabrication technologies 205, 208 multibillion transistor chips 334 nanoimprint lithography 309, 311, 313 multibit errors 326 – challenges 19, 311 multichannel vital sign monitoring system 463 nanometer era 345 multienergy smart grid 476 nano-MOSFETs 323 multifunctional heterogeneous subsystems 56 nanoparticles 424 multipatterning 293, 298 – based electrospray deposition methods 517 multiple-epitaxy growth 171 nanopillars 518 multiple patterning techniques 291 nanopirani-based sensors 209 multiple p-type doping 171 nanoscale manufacturing 277 multiple sensor systems, on-chip integration nanosensors 148 of 510 nanostructuring 509 multirobot systems 389 – supercapacitor systems 508 multi-sensor system-on-chip (MUSEIC) nanotechnologies 208, 363 463, 464 – enhanced glucose sensors 512 multiwire sawing 233 – plasma etch challenges 285 nanotweezers 270 n nanowire 96, 245, 281 NAND 116 – conduction lines 519 – capability 115 – fabrication 400, 404, 424 – flash 125 –– defects 441 – flash memory 118 –– methods 424 – gate 78 –– techniques 66 – memories 117 – grid polarizers 516 – type array organization 122 – parasitic capacitances of 97 nanocharacterization 245 National Institute of Standards and Technology nanodevices 258, 363 (NIST) 42 nano-electro-mechanical memory National Nanotechnology Initiative (NNI) 41 devices 130 National Network for Manufacturing nanoelectromechanical system (NEMS) 59, Innovation (NNMI) 556 504 National Science Foundation (NSF) 42, 449 nanoelectronics 141, 205, 212, 219, 245, 449, National Strategic Computing Initiative 450, 453, 530, 536, 539, 541, 568, 595, 599, (NSCI) 51 613, 614, 615 National Technology Roadmap for – based hardware 529 Semiconductor (NTRS) 33 – based solutions 541 N2-based aerosols 270 – components 245, 317, 537, 567, 568, 600 n-Doped MOS (NMOS) 18, 19, 43, 78, 259, – degree programs, challenge facing 601 260, 344 – education 604, 606 near-adiabatic logic circuits 141 – sector 471 near-field optical techniques 251 – in Europe 564, 578 negative bias temperature instability – fabrication technology 205 (NBTI) 323, 348, 350 BINDEX 03/17/2017 16:25:39 Page 631
Index 631
neuristors 147 optimal trajectories 494 neurosynaptic chips (SyNAPS) 147, 148 optimization-based design methods 373 nFET transistor 104 optoelectronic integration 576 n-IGBT 184 optoelectronics 251 nitride spacer etching 281 ordinary differential equation 383 nitrogen aerosols 270 organic-based areal light emitters range 69 nitrogen exodiffusion 258 organic contamination 268 nitrogen plasma treatment 271 organic films 279 noise figure (NF) 157 organic light-emitting diode (OLED) 516 nonaqueous cleaning steps 269 – commercial OLED flat panel display 517 nondestructive testing 247 – displays 516 nonlinear behaviors 387 organic thin films dep 279 non-Newtonian fluids 269 original equipment manufacturer (OEM) 437 nonpunch-through (NPT) 173 OSA. see obstructive sleep apnea (OSA) non-silicon channel 102 ovonic threshold switch 131 nonstandard oxidation techniques 271 oxide–electrolyte interface 145 nonthermal activation techniques 274 oxide electronics 143 nonthermal illumination effects 274 OxRAM, oxide based resistive RAM 127, 128 nonvolatile memory (NVM) 20 oxygen plasma 268 – applications 125 oxygen scavenging 258 NOR Flash 131 NOR gate 78 p NP junction 43 Packaged TLens 399, 400, 417, 418 n/p-MOS transistors 58 – assembly of 413 N-push VCOs 161 package parasitic elements 408 nuclear magnetic resonance (NMR) 210 Pan-European partnership in micro- and nucleotides 214 nanoelectronic technologies and numerical aperture 291 applications (PENTA) 557 parallel e-beam lithography 309 o parallel testing systems 325 object oriented programming 375 parasitic capacitances 405 obstructive sleep apnea (OSA) 463 – calculation method 83 off-axis electron holography 260 parasitic current paths, in cross-point off-axis illumination 290, 301 arrays 130 ohmic contacts 190, 198 parasitic inductances 405 on-body sensors 458 Pareto optimal 389 on-button-cameras 48 park distance control (PDC) 493 one-dimensional nanowires 275 parking assistant (PA) 493 one-pass synthesis (OPS) 356 particle removal efficacy 268, 270 ON–OFF switching process 79 pass-diagram (PD) 357 on-resistance 177, 178, 180, 182 pass-transistor-logic (PTL) 356 open-circuit failures 19 pass-XNOR logic (PXL) 357 open fault model 430 patched flows 371 Open Microprocessor Systems Initiative path distribution at different temperatures 347 (OMI) 572, 573 pattern collapse 270 operating temperatures 347 pedestals 404, 406 optical lithography 289, 290, 291, 295 people-to-thing 153 optical projection lithography 294 performance modeling, analysis 370 optical proximity effect correction 290 permanent defects 438 optical pulse oximetry 459 personal health, factors determining 457 optical transducers 206 personalized stress measurement optical wavelength 291 techniques 466 optimal safety 495 personal rapid transport (PRT) 541 BINDEX 03/17/2017 16:25:39 Page 632
632 Index
pFET device 93 – intergovernmental programmes 557 pFET mobility on Ge channel 104 – joint undertaking 558 p-GaN devices 192 – national programmes 557 P-GaN/P-AlGaN gate structure 189, 192 – public announcements 556 phase change memories (PCM) 120, 124, 125 – world 556 phase noise (PN) 158 pollution 452 phase separations, morphology 304 polychromatic X-ray beam 251 phase-shifting masks 290 polymethylmetacrylate (PMMA) 302 phosphorous, as dopants 30 polysilicon 30, 38 photo-beam lithography 598 – channel 120 photoemission electron microscopy – chunks 229 (PEEM) 256 – etch mechanism 283 photon flux 247 – floating gates 119 photonics 588 – gate 283 photoresist mask 281 – lines 30 photoresist removal 270 – rods 228 photovoltaic (PV) 179, 588 polysomnography (PSG) 463 physically unclonable functions (PUF) polystyrene (PS) 302 technologies 534 pooling resources 602 physical vapor deposition (PVD) 275, 276 porous inter-metal-level dielectrics (ILD) 318 physiological sensors, medical-grade 457 porous low dielectrics failure times 319, 320 piezoelectrics 509 positioning sensors 493 – actuation 215 positron annihilation spectroscopy (PAS) 256 – behavior 185 post CMOS 49 – polarization 185 – and beyond silicon 354 piezoresistive 209 post-Dennard or leakage-limited scaling 139 p-IGBT 184 postlitho smoothing techniques 313 pigment-silica composite nanoparticles 517 post-mapping transformations 342 pilot lines projects 555 power-added efficiency (PAE) 157 PiN diodes 181, 183 power amplifier (PA) 156 pin reordering 349 power budget 459 piranha strip 268 power combiners 158 planar-bulk transistor architecture 89 power consumption 4, 486 planar double-gate devices 90, 93 – per sensor 458 planar process 10 power converters 540 planar transistors 317, 327 power density 486 plasma-based native oxide removal 269 power devices 164, 176 plasma cleaning procedures 283 power dissipation plasma doping 274, 275 – in CMOS circuit, sources of 340 plasma-enhanced ALD (PE-ALD) 279 – in transistor devices 84 plasma etching 279, 280 power electronics 163, 164, 195, 451, 483, plasma-induced damage 284 536, 583 plasma oxidation 271 – applications 163 plasma processing 282, 283 – components 484 plasma smoothing 313, 314 – converters 472 plasma–surface interactions 282 power factor correction circuit (PFC) 179 platform-based design (PBD) 365, 372, 373, power grids 380 – stabilization 163 PMOS/NMOS transistors 18, 28, 78, 340, 349 power management 459 POC devices 462 – electronics 537 polarity gate (PG) 354 power MOSFET structures 168 policy implementation instruments power-optimized power supplies – European Union 557, 558 – versus gate length 87 BINDEX 03/17/2017 16:25:40 Page 633
Index 633
power performance trade-off 75 radio frequency (RF) 505 power semiconductors 164 – performance 157 power spectra density (PSD) 312 – RF CMOS 153 power transistors 187 radio frequency identification (RFID) 515 power wall 340 – tags 532 PPP Green Car 588 radio transmitter circuits 503 preamorphization 273 random-access memory (RAM) 16, 25 precession electron diffraction (PED) 251 random telegraph noise (RTN) 324 predictive medicine 567 – noise 129 preeclampsia 466 rapid escalation pregnancy, monitoring 466 – in energy/operation 41 presbyopia 464 rate of soft errors (SER) 325 preterm birth 466 Rayleigh equation 289, 301 printed circuit board (PCB) 54 razor 435 process architecture 99 RC. see reverse-conducting (RC) process engineering 317 reactive radicals 282 processor–memory performance gap 114 reactive synthesis 388 processor power consumption 50 read-only memory 15 process variations 435 realistic simulation 542 product design 544 real-time computing power 493 programmable logic array (PLA) 441 real-time sensing 458 projection lens 290 real-time software capabilities 499 projection systems 289 recess-channel-array transistor (RCAT) 117 protein identification 463 recess phenomena 284 PSA test 462 recognition, mining, and synthesis (RMS) 351 p-type dopant 171, 272 redeposition 269 p-type layers 192 reduce surface states 17 Public-Private Partnership 570, 577, 606 refractive index 290 public support 564 register transfer level (RTL) 334, 371 puller furnace 232 remote monitoring 503 pulmonary pressures 461 renewable energies 163, 451, 471, 472, 537 pulse-arrival time (PAT) 464 ReRAM see Resistive RAM cell pulsed laser deposition 147 Research and Innovation for societal pulsed plasma technologies 284 welfare 450 pulse sensor 461 research and technology institutes 573 punch-through (PT) 173 Research Technology Organization (RTO) 561 resist removal processes 269 q resist trimming processes 281 quality constraint circuit (QCC) 352 resistive RAM (RRAM or ReRAM) 126, 129, quality of information 544 134 quality of life 457 resonance frequency 210, 404 quantum confinement effects 104 resonant tunneling diodes 438, 439 quantum-dot cellular automata 438, 439 restricted fin geometry 325 quantum effects 424 RESURF 166 quantum mechanics 4, 143 reverse-blocking IGBT 175 quasi ballistic 101 reverse-conducting (RC) 175 risk of inconsistency 369 r Robert H. Dennard scaling laws 21 racetrack memory 124 robotics 451 RADAR 542 root mean square (RMS) 234 radar/lidar 212 – applications 351 radar sensors 493 RRAM 131, 132 radio communication 542 rural health care 462 BINDEX 03/17/2017 16:25:40 Page 634
634 Index
s – packaging technologies 397, 416 sacrificial thin film layers 268 – processing 140, 193, 225, 267, 473, safety-critical scenarios 497 483, 486 sapphire substrate 200 – units 225 SAR500 398, 399, 402, 404, 406, 407, 409, – value 614 410, 419 – wafers 9 – ceramic package of 411 Semiconductor Industry Association (SIA) 36 satisfiability modulo theory (SMT) 382 SEMI standard 33 scaffolding 373 sensing 532 scaling existing technologies 120 sensors 55, 208, 509, 533, 539 scaling in Dennardian and post-Dennardian – and communication networks 533 nanoelectronics era and exploitable silicon – die 404, 412 area 140 – equipped with receiver/transmitter unit 548 scaling laws 208 – gas sensors 212 scalpel conductive atomic force 246 – mechanical sensors 208 scan chain 431 – motion processing units 510 scan in signals 431 – nanosensors for biomedical applications 511 scanners 289, 290 – nodes 471 scanning electron microscope 247 – optical sensors 513 scanning near-field optical microscopy – for smart home, and building energy (SNOM) 251 management 539 scanning transmission electron microscopy – terahertz imaging 211 high-angle annular dark-field imaging – vision 210 (STEM-HAADF) 249 SER. see rate of soft errors (SER) scan out signals 431 shape memory alloy 216 scan test 431, 432 shift-register memory 124 Schottky diode 176, 179 shock absorber 404, 407 science, technology, engineering, and shock margins 415 mathematics (STEM) fields 604 shock resistance 405 secondary ion mass spectrometry (SIMS) short-channel device threshold voltage 76 256 short-channel effect (SCE) 73, 322 security measures and technologies 68 – DIBL component 91 segment insertion bit (SIB) 435 – immune MOSFET architectures 89 self-aligned deposition techniques 267 SiC self-aligned double patterning (SADP) 291 – BJT 182 self-aligned quadruple patterning (SAQP) 291 – devices 178 self-aligned silicon gate MOS process 15 – diodes/rectifiers 179 self-faults, definition 441 – power devices 183 self-sustaining energy systems 471 – substrate 200 Sematech consortium 32 – wafers 177, 183 SEM, electron beam 248 SiCOH-based porous dielectrics 318 semiconductor 8, 15, 115, 167, 193, 333 Siemens process 228 – atom probe tomography, analysis 249 SiGe-HBT 157 – based LASERs 69 signal critical path 85 – business environment 27 signal mapping 401 – chips 313 signal processing 598 – companies 48 signal temporal logic (STL) 382 – components 333, 537 signal-to-noise ratio 154 – enhanced CNTs 505 silicic acid residues 269 – industry 11, 22, 48, 279, 317, 431 silicon 225 –– history of 3 – availability and technologies 226 – memory – based sensors 513 –– lowest-cost and highest-density 116 – channel 89, 92 BINDEX 03/17/2017 16:25:40 Page 635
Index 635
– crystal orientation 102 –– mechanical treatments 232, 233 – metallurgical production 226 –– wafer manufacturing costs 233 – purity of 226 silver nanoink 515 – transport parameters 103 silver nanowire 519 – worldwide production of 226 SIMS. see secondary ion mass spectrometry silicon boule 237 (SIMS) silicon carbide (SiC) 176, 199, 536 simulation techniques 370 silicon circuits simultaneous iterative reconstruction – radiation-induced soft-errors 325 technique (SIRT) 248 silicon coimplantation 273 Si nanowire channel 250 silicon crystal, growth 231 SiN, chemical vapor deposition of 196
silicon dioxide 31, 38 Si3N4 film 252 silicon emerging technologies 335 SiO2/HfO2 gate dielectrics 323 silicon fabrication 397 SiO2 interface layer 318 silicon food chain 226 SiP design 576 silicon fusion bonding 416 Si power devices 164 silicon gate devices 19 SiP–System-in-Package 54 silicon gate process 15, 30 Si wafers 289 silicon ingot 231 skin conductance 466 silicon lattice 230 skipping methodology 31 silicon microelectronics 370 sleep apnea 463, 464 silicon nanowire 354, 438 sleep monitoring 463 – FET 443 slower access mass-storage memory 114 – transistors 249 smart autonomous systems 148 silicon nitride layer 19 smart building 537, 538 silicon nitride spacer 284 – cockpit 539 silicon on insulator 38, 90, 576 smart cities 451, 452, 453, 529, 531, 532, 540, silicon oxidation 271 543 silicon oxide – areas to define 530 – consumption 268 – challenges to development of – deposition 279 nanoelectronics 542 – as gate material 271 – data security 546 – growth kinetics 271 – environment 547 silicon oxynitride (SiON) 271 – flow of information 531 silicon photonics 588 – information infrastructure 534 silicon platform 458 – infrastructure of 543 silicon recess 284 – mobility and transport 540 Silicon Research Corporation (SRC) 36 – production and logistics 543 silicon-silicon dioxide interface 16, 271 – safety and security 546 – properties 271 – by semiconductor business, future for 530 silicon substrate 200 – urban innovation 533 silicon surface 275 smart contact lens 464, 465 silicon (Si) technology 536 smartdust 532 silicon transistors 8 smart energy 473–475, 486 Silicon Valley 18 – grid 536 silicon wafers 188, 194, 242 – key products for 483 – production 232 – management 472 –– chemical-mechanical polishing – and societal challenges, applications of 476 (CMP) 232, 234 – systems 471, 473, 474, 483–486 –– chemical treatments 232, 234 smarter society 590 –– cleaning methods 233 smart factories 545 –– epitaxy 236 smart grid 164, 471, 539 –– final cleaning and packaging 235 – energy revolution 472 BINDEX 03/17/2017 16:25:40 Page 636
636 Index
smart mobility 542 spontaneous polarization 185 – and transport 537 sputtering 147 smartphone 49, 449, 460, 501 sputter PVD techniques 277 – based point of care biomedical sensors 512 stable power source 537 – camera modules of 402 stacked nanowires (SNW) 96 – glucose sensor 463 – structure, capacitance breakout for 98 smart production and logistics 537 standard dielectric cap 321 smart reservation and booking 541 standard low surface tension approaches 270 smart sensor 424, 533, 586 standard megasonic cleaning 269 – based information 590 standard MOS – and sensor systems 542 – FEOL process flow 267 smart system 53, 530, 539 – transistors 351 smart watch 467 state encoding for low power 343 SME businesses 571 state-of-the-art (SOA) sneak paths 442 – A/D BiCMOS process 573 social welfare system 452 – energy per conversion 148 societal challenges 449 – finFET CMOS technology 514 societal demands 472 – terahertz CMOS detectors 161 societal needs, digital domain 58 – tunnel FETs from various international soft error groups and 144 – effects 318 static random access memory (SRAM) 87 – in SRAMs, technology scaling trends 326 – cells 292 soft skills 596, 607 – circuits 85 software architecture 499 – yield 77 software-based self-test (SBST) 437 statistical process control (SPC) 230 software-related aspects of authorization 534 steep-slope switches address 140 software solutions 547 steering wheel 493 solar energy 163, 538 steppers 289 solid-phase epitaxial growth (SPEG) 273 STIM300, 398, 402, 420 solid-state drives (SSD) 115 ST LIS2DS12 microchips 510 solid-state imaging 513 storage class memory (SCM) 115, 126 solid-state lighting 538, 539 strain analysis 250 solid-state technology 145 – precession electron diffraction 252 solution space of ITD-aware synthesis tool 347 – techniques 251 sonic pulsed spray 269 strained Si 86 source–drain epitaxy 97 strained-SOI 102 source–drain fringing capacitance 79 strain field distribution 251 source–drain structure 90 stress 465 source field plate 196 – decoupling 405, 406 source-to-drain current 38 –– substrate 404, 420 SpaceEx 383 – evaluation, single sensor 465 spacer-defined patterning 291 – free polysilicon rods 232 spacer formation 279 structured silicon beams 404 S-parameter 97 stuck-at fault model 431 spatial frequency 312 study-abroad programs 604 spectrometer 213 substrate implantation 194 speculative execution 50 substrate isolation 165 speed sensors 493 substrate removal 194 spike rapid thermal annealing 274 substrate resistance 169 spiking neural network (SNN) 134 subtractive processing 267 spin coating 275 sulfuric acid-based chemistries 268 spin-transfer torque (STTM or STT-RAM or supercapacitors 506, 507
STT-MRAM) 44, 123, 124, 131 supercritical CO2 270 BINDEX 03/17/2017 16:25:40 Page 637
Index 637
supercritical nitrogen fluid 270 terahertz imaging 211 superintelligence 589–591 terahertz or submillimeter wave spectrum 159 superjunction 176 terahertz products 160 – devices 170 terahertz radiation 211 – research and development activities 172 terahertz waves 159 superjunction MOSFET 199 test access mechanism (TAM) 434 – HV-MOSFET 171 test access port (TAP) 434 superjunctions 166, 199 test data register (TDR) 435 – technology 165 testing role 427 surface-induced dispersion 195 test pattern generation 440 surface modification agent 271 test process 429 surface passivation 198 test vector generation circuitry 433 surface plasmon resonance (SPR) 213 textile-integrated health patch 465 surface preparation 268 therapy monitoring 460 surface treatment 273 thermal actuators 216 sustainable energy 164 thermal annealing process 275 switch devices 180 thermal-aware logic synthesis 347 switching circuits 169 thermal budget 271 switching ON–OFF 84 – techniques 274 switching PAs 158 thermal conductivity 200, 238 switching polarity 126 thermally controlled artificial muscles 216 synchrotron 246 thermal voltage noise limit 141 synthesis tools 369 thermionic limit 141 synthetic biology 373 thermo-, piezo-, or electrodynamic system architectures 385 generators 537 – design 380 thin AlGaN gate barrier 191 system engineers 390 thin film deposition 275 system in package (SiP) 588 thin film EUV lithography 279 – structures 246 thin film transistor (TFT) 505 system modeling 386 thin oxide electrical quality 271 system of systems 531 three-dimensional analysis 246 system on chip (SoC) 54, 363, threshold logic gates (TLG) 439 433, 537 threshold logic synthesizer (TELS) 439 – embedded instruments 433 through silicon via (TSV) 246 – test architecture 434 thyristors 484 system properties 375 time-dependent dielectric breakdown system requirements 48 (TDDB) 318, 322 time redundancy 436 t timing language 386 tablets 49 tip-enhanced Raman spectroscopy 1T1C CBRAM memory structure 128 (TERS) 251 1T/1C ferroelectric memory 121 topology manipulation 349 tear analysis sensors 464 traditional beam line implanter 274 tear fluid glucose levels 464 traffic density 540 technology-dependent transformations 342 traffic management 490, 540, 541 technology mapping 349 transducers 205 – for low power 341 – integration and connectivity 218 technology readiness level (TRL) 554, 571 transfer characteristics of tunnel FET pixel, at telecommunication 536, 575 light intensity 150 telematics application programs 574 trans-humanism 592 temperature 540 transient defects 438 terahertz circuits 161 transient-enhanced diffusion (TED) 273 terahertz CMOS 160 transistors 141, 206, 280 BINDEX 03/17/2017 16:25:41 Page 638
638 Index
– architecture 318 ultrasonic sensors 493, 496 – Bardeen, John 7 ultrasonic transducers 215 – Brattain, W.H. 7 ultrathin body (UTB) 92 – channel, mass of carriers 102 ultrathin body and BOX (UTBB) 92 – concepts 53 – device 92, 93 – current 15, 100 – parasitic capacitances of 97 – degradation 323 – three-dimensional schematics 90 –– mechanisms, voltage dependence 323 ultrathin oxides 271 – devices 87 under-represented minoritie (URM) 604 – drain current changes 324 unified modeling language (UML) 368, 385 – effect 5, 51 unipolar memories 131 – electrical width 94 United States – fabrication 43 – built equipment 27 – innovation – health care cost 455 –– 1998 ITRS, equivalent scaling vision 35 – owners 563 – reliability issues 322–325 – US National Nanotechnology Institute 502 – self-mixing behavior of 161 university-industry cooperative programs 608 – threshold voltage 73 unmanned automated vehicles 490 transistor-to-transistor isolation 18 Uppaal-Tiga 389 transmission gate logic,and one-pass urban energy generation 538 synthesis 356 urban manufacturing locations 543 transmission lines 407 urban mobility 541 transnational collaboration 569 urban processes 531 transportation systems – infrastructure 541
– CO2 and toxic emissions reduction 491 UV light 17 transport enhancement, material engineering 101 v
1T1R architecture 131 vanadium dioxide (VO2) 145 trench access transistors 275 Van der Waal (vdW) 502 trench MOSFET 189, 190 Van Neumann architecture 52 trichlorosilane 227, 228 vapor phase doping 172 TriGate 90, 99 variability-reliability interactions 325 triple-level cell (TLC) 120 vehicle communication systems true fabrication technology 464 – security breaches 497 truth table, algebraic expressions, and PLA vehicle-to-infrastructure (V2I) 491 implementations of logic function 337 vehicle-to-vehicle (V2V) 491 tungsten silicide 30 velocity limitation 101 – polysilicon gate MOS process 30 ventilation 538 tunnel FET 43, 143, 145, 148, 150 vertical alignment (VA) 516 – optical sensors 149 vertical buffer 193 tunnel transistor. see tunnel FET vertical-channel CAT (VCAT) 117 turing machine 113 vertical devices 188 two-dimensional electron gas (2-DEG) vertical DMOS 171 185, 186 vertical 3D RRAM (VRRAM) architecture 132 vertically stacked double-gate SiNW u transistors 354 ultrahigh voltage–high-injection devices 183 vertically stacked nanowires 90 ultralow power (ULP) 133 Vertical NAND (V-NAND) Flash 120 – electronics 536 vertical pillar transistor (VPT) 117 – wristband 467 vertical ReRAM 132 ultrashallow junctions 273 video cameras 493 ultrashort channel 100 video sensors 543 ultrashort devices 100 virtual European research institute 587 BINDEX 03/17/2017 16:25:41 Page 639
Index 639
virtual factories 546 Weibull failure distribution 319 virtual integration 371, 372 welding 418 virtual world models 499 Western Institute of Nanoelectronics (WIN) 42 vision zerotarget for road safety 490 wet-ambient diffusion 9 VLSI Symposium 32, 33 wet cleaning 268 V-model, pictorial representations for 372 wet etching 279 volatile etch products 282 wide-bandgap semiconductors 164, 177 voltage-controlled oscillator (VCO) 156 WiFi 155 voltage converters 537 wind energy 163 voltage doping transformation (VDT) 76 wire bonding 415, 416 voltage rating 170, 177 wireless communications 154, 536 volume-dependent forces 208 – for consumer electronics 503 Von Neumann architecture 39, 113 – systems 540 Voronkov theory 239 – technologies 536 wireless sensors 461 w – nodes 211 wafer World Energy Outlook 472 – cost of producing 27 World Semiconductor Council (WSC) 34 – fabrication 184 WPAN 155 – heat 543 – size conversions 31, 32 x – specification, for key parameters 242 1975-203X, ages of scaling 47 – wafer-to-wafer assembly 416 X-ray water-based cleanings 269 – detection chain 248 water causing pattern collapse 269 – micro-Laue diffraction 246 watermarks 269 – for strain measurements 253 wave radar applications 212 X-ray absorption near-edge structure wax-mounting process 234, 235 (XANES) 256 wearable bioimpedance sensor patch X-ray computed tomography (XCT) 246 system 461 X-ray diffraction (XRD) 253 wearable devices 363, 460 X-ray fluorescence (XRF) 256 – medical-grade 457 X-ray focusing devices 251 wearable health care application domains, technologies for 64 z wearable sensors 363, 459 Zeno behaviors 370 wearable wireless bioimpedance patch 461 zero-power technologies 534 weather conditions 541 zone technique (FZ) 232 BINDEX 03/17/2017 16:25:41 Page 640