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Preparation and Characterization of (Gesbte)) Semiconductors for Phase-Change Optical Storage Hessa Ali Humeid Al-Shamisi

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Preparation and Characterization of (Gesbte)) Semiconductors for Phase-Change Optical Storage Hessa Ali Humeid Al-Shamisi United Arab Emirates University Scholarworks@UAEU Theses Electronic Theses and Dissertations 2008 Preparation and Characterization of (GeSbTe)) Semiconductors for Phase-Change Optical Storage Hessa Ali Humeid Al-Shamisi Follow this and additional works at: https://scholarworks.uaeu.ac.ae/all_theses Part of the Materials Science and Engineering Commons Recommended Citation Humeid Al-Shamisi, Hessa Ali, "Preparation and Characterization of (GeSbTe)) Semiconductors for Phase-Change Optical Storage" (2008). Theses. 293. https://scholarworks.uaeu.ac.ae/all_theses/293 This Thesis is brought to you for free and open access by the Electronic Theses and Dissertations at Scholarworks@UAEU. It has been accepted for inclusion in Theses by an authorized administrator of Scholarworks@UAEU. For more information, please contact [email protected]. United Arab Emirates University Deanship of Graduate Studies PREPARATION AND CHARACTERIZATION OF (GeSbTe) SEMICONDUCTORS FOR PHASE-CHANGE OPTICAL STORAGE By Hessa Ali Humeid AI-Shamisi Supervised by Dr. Hassan Ghamlouche Physics Department Faculty of Science, UAEU Dr. Naser Qamhieh Dr. Saleh Thaker Physics Department Physics Department Faculty of Science, UAEU Faculty of Science, UAEU A Thesis Submitted to the Deanship of Graduate Studies in Partial Fulfillment of the Requirements fo r Degree of Master of Science in Materials Science and Engineering 2008 Acknowledgments First, always and fo remost, I thank almighty Allah fo r rus blessing and fo r providing me the capability to successfullycomplete trus work. I would like to express my heartiest thanks and sincere gratitude to my supervisors, Dr. Hassan Ghamlouche, Dr. Naser Qamrueh and Dr. Saleh Thaker fo r their guidance, support, encouragement, patience, unlimited assistance, critical reviewing and providing me the required fa cilities during the work. 1 fe el both honored and privileged to work with such a group. Many thanks to Mr. Mohammed Elshaer (lab technician in the physics department) and Mr. Esam Attia (technician in the Central Lab Unit), fo r their help in preparing some experiments and analyzing the samples. Special thanks to Ms. Sadeeqa Ahmed, from the physics department, fo r her assistance and support. Special appreciation is expressed to my colleagues and friends in UAE University, especially in the physics department. No words can ever express my great gratitude and special thanks to my great fa mily, especially my parents fo r their great support and my husband fo r his patience and great help throughout my study. II Abstract In the last decade, the phase change optical recording based upon chalcogenide glasses has advanced remarkably at full-scale commercial applications in the fo rm of rewritable compact disks (CD-RWs) and digital video disks (DVD-RWs). The principle of phase-change optical recording is based on a thermally induced reversi ble transformation between amorphous and crystalline phases. The search fo r recording materials possessing fa st crystallization rate and long data retention has been pursued. Research results have revealed that Ge-Sb-Te compounds exhibit fa st crystallization, which has been explained in terms of their single-phase structure. In the present work, electrical properties of Ge-Sb-Te thin films using Impedance Spectroscopy, Current-Voltage, and Capacitance-Voltage techniques is presented. First, we studied the effect of the electrical contacts, deposited on top of Ge-Sb-Te films, on the measured electrical signal (Impedance Spectroscopy). To do this, three different configurations of the electrical contacts were prepared. The results show that the electrical contacts have no effect when the silver paste is placed on the gold electrodes away from the thin film under test. This guarantees no interaction between the silver paste and the film under test during the heating process. Also the results show that the order of depositing layers (material and the gold) is not important and what matters is the location of the silver paste on the gold electrodes. Second, the Impedance Spectroscopy and Current-Voltage data shows similar resistance and relaxation frequency temperature dependence with activation energies 0.36 and 0.39 eV, respectively. Therefore the corresponding energy gap is estimated to be 0.72 eV and 0.78 eY. This result agrees with the optical gap (0.7 eV) reported in literature. This agreement co nfirms that Ge2Sb2 Te5 belongs to the chalcogenide fa mily. In addition, " III the I-V curves show that the amorphous-crystalline transition temperature (Tc is around 135 °C Third, the Capacitance-Voltage measurements were performed on amorphous samples of Ino.3Ge2Sb2 Te5 and Ge2Sb2Tes thin films in order to study the effect of doping on the electrical properties of Ge2Sb2 Te5. The results show that inducing Indium to Ge2Sb2 Tes decrease the capacitance of the sample as the bias voltage increases fo r the whole range of temperatures. However, the same behavior is observed fo r undoped sample (Ge2Sb2 Te5) only at temperatures close to the amorphous-crystalline transition temperature and at high applied bias voltages (� 15 volts). The behavior is attributed to the increase in electron concentration as the bias voltage and temperature increase. For lno.3Ge2Sb2 Te5 sample, the indium can be considered as an additional source of free electrons. This would contribute to a furtherand significant decrease in the capacitance ofIno.3Ge2Sb2 Te5 sample, and eventually the capacitance becomes negative. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes clo e to the amorphous-crystalline transition temperature. Finally in the conclusion 1 proposed some study to be conducted on Ge2Sb2 Te5 films. o IV TABLE OF CONTENTS LIST OF FIGUR ES ...................................................................................................... VII LIST OF TABLES ........................................................................................................ IX CHAPTER I ........................................................................................................... 1 INTRODUCTION ........................................................................................................... 1 CHAPTER II ........................................................................................................... 5 THEORETICAL BACKGROUND ................................................................................. 5 2. 1 Introduction ....................................... ........................ ................. ...... ............ .. 5 2.2. Glass fo rmation and the amorphous phase ..................... ............... ................ ....... 6 2.3 Phase-change materials ......... .................. ............. .......... ........ '" .........................9 2.3.1 Chalcogenides . .................... ...... .......... ................ ...... ............. ............ ... 10 2.4 Density of states in amorphous semiconductors ..... ....................... ...................... 13 2 5 Conduction in amorphous semiconductors ...... ............ ............. .......................... 16 2.5.1 Extended state conduction........ ........... ....... ............ ............ ..... .............. .... 17 2.5.2 Hopping conductivity ..................... .................. ........... .............................. 19 2.6 AC conductivity ... .............. .... ......... ......... ... .................... ........ .... ................... 20 CHAPTERll ......................................................................................................... 24 SAMPLE PREPARATION AND EXPERIMENTAL TECHNIQUES . ...................... 24 3. 1 Sample preparation ...... .......... .. ...., ................................................................. 26 3.1.1 Preparation of bulk materials .. ... .. .......... ................. ............ · ........ · ··· · ........ 26 3 1.2 Thermal Evaporation Technique (TE) .......... ........ ............ .......................... 27 3. 1 . 3 Sputtering Technique ........................... ............. ...... · ..... .......· .................. · 28 3 .1.4 Deposition of electrodes ................... ...............········ ··································· 28 o v 3 2 Mea uring Technique ...... ... ... ........... ....... ........ .... ................. ....... ...... ... ... 29 3 2.1 The impedance pectroscopy ........... ......... ... ............. ..... .... ... ... .... ........... .. 29 3 .2.2 Current-Voltage technique ... .................... ........ ......... .... ... ... ... ................. 31 3.2.3 Capacitance-Voltage technique . ..... ... ... ........... ....... ..... ... .................. ..... 31 CHAPTER IV ......................................................................................................... 32 RESULTS AND DISCUSSIONS .............. .. ...................... .............. ............................. 32 4. 1 DC Measurements .... ... .......... ....... ...... ........... ...... ...... ...... ... .... .......... ............. 32 4.2 Impedance spectroscopy measurements ......... ............ ...... ........................... .. 35 43 Capacitance-Voltage measurements of Ge2Sb2Tes and Ino.3Ge2Sb2Tes ....... ... ...... 42 ................................. ......... ..................... ....... ................. .. ... CONCLUSION ....... 51 REFERENCES ................................................. .......... ...........................................
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