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(12) Patent Application Publication (10) Pub. No.: US 2006/0172083 A1 Lee Et Al US 2006O172083A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2006/0172083 A1 Lee et al. (43) Pub. Date: Aug. 3, 2006 (54) METHOD OF FABRICATING ATHIN FILM Publication Classification (75) Inventors: Jung-Hyun Lee, Yongin-si (KR); (51) Int. Cl. Charig-Soo Lee, Yongin-si (KR): C23C I6/00 (2006.01) Yoon-Ho Khang, Yongin-si (KR) (52) U.S. Cl. ......................................... 427/535; 427/248.1 Correspondence Address: HARNESS, DICKEY & PIERCE, P.L.C. (57) ABSTRACT E.SE O195 US Methods of fabricating a thin film. An example method 9 (US) includes forming a GeSbTe thin film on a surface of a (73) Assignee: Samsung Electronics Co., LTD Substrate by chemically reacting a first precursor including gnee. g es germanium (Ge), a second precursor including antimony 21) Appl. No.: 11A341.718 (Sb), and a third precursor including tellurium (Te) in a (21) Appl. No 9 reaction chamber and processing the surface of the GeSbTe (22) Filed: Jan. 30, 2006 thin film with hydrogen plasma. Another example method includes injecting at least one precursor into a reactor (30) Foreign Application Priority Data chamber and depositing the at least one precursor onto a Substrate within the reactor chamber using a chemical vapor Jan. 31, 2005 (KR)............................ 10-2005-OOO8753 deposition process so as to form the thin film. Patent Application Publication Aug. 3, 2006 Sheet 1 of 2 US 2006/0172083 A1 FIG. 1 (CONVENTIONAL ART) Patent Application Publication Aug. 3, 2006 Sheet 2 of 2 US 2006/0172083 A1 31 FIG. 2A PHYSICAL SORPTION PRECURSOR(SOURCE) . (e) CEucal-sortional US 2006/0172083 A1 Aug. 3, 2006 METHOD OF FABRICATING ATHIN FILM region 11b and the lower electrode 16. The heat generated by the Supplied current may adjust a phase state of the phase PRIORITY STATEMENT change film 17 (e.g., to convert or maintain the phase change film 17 at one of a crystalline state and an amorphous 0001. This application claims priority of Korean Patent state), where a resistance corresponding to the phase state of Application No. 10-2005-0008753, filed on Jan. 31, 2005, in the phase-change film 17 may be indicative of a first logic the Korean Intellectual Property Office, the disclosure of level (e.g., a higher logic level or logic “1”) or a second logic which is incorporated herein in its entirety by reference. level (e.g., a lower logic level or logic “0”). The supplied current may be controlled so as to set a phase state of the BACKGROUND OF THE INVENTION phase-change film 17. 0002) 1. Field of the Invention 0010. A conventional phase-change material which may 0003. Example embodiments of the present invention be used in the PRAM 100 may be a compound including relate to a method of fabricating a thin film, and more germanium (Ge), antimony (Sb), and tellurium (Te) (e.g., particularly to a method of fabricating a thin film having GST or GeSbTe). In another example, the phase-change film reduced impurities. may be embodied as a chalcogenide material layer. 0004 2. Description of the Related Art 0011 A power consumption of the conventional PRAM 100 may be reduced by reducing its current consumption. In 0005. A phase-change material may be selectively con an example where the PRAM 100 includes GST, a reset verted between crystalline and amorphous states based on an current (e.g., a current for transitioning from a crystalline operating temperature. A phase-change material may have a state to an amorphous state) may be higher, thereby con lower resistance when in a crystalline state as compared to Suming higher amounts of power during an operation of the the phase-change material in an amorphous state. In the crystalline state, the phase-change material may be charac PRAM 1 OO. terized as having a systematic or ordered arrangement of 0012. A conventional GST thin film may be fabricated atoms. The phase-change material may be reversibly with a physical vapor deposition (PVD) process. If a thin changed between the crystalline and amorphous states Such film is deposited using the PVD process, it may be difficult that a conversion from one state to the other may not be to control the thin film growth, the speed of deposition of the permanent. A phase-change random access memory thin film may be lower, and the thin film may not have a (PRAM) device may be a memory device having charac sufficient density. Additionally, the thin film may be difficult teristics of the phase-change material. A resistance of a to form in Smaller regions. Accordingly, a contact area PRAM may vary based on a state (e.g., crystalline, amor between a heating unit (e.g., Supplying the Supply current) phous, etc.) of a phase-change material included therein. and the thing film (e.g., including GST) may increase. Heat loss may thereby be increased due to the increased contact 0006. A conventional PRAM may include a phase area. The increased heat loss characteristic may cause higher change film electrically connected to source and drain levels of reset current to be applied in the PRAM 100 so as regions through a contact plug. The PRAM may be config to precipitate a phase state change. Therefore, it may be ured to operate in accordance with the variation in resistance caused by a state change (e.g., to a crystalline structure, to difficult to employ conventional PRAMs at higher integra an amorphous structure, etc.) in the phase-change film. tions. 0007 FIG. 1 illustrates a cross-sectional view of a con SUMMARY OF THE INVENTION ventional PRAM 100. Referring to FIG. 1, the conventional PRAM 100 may include a first impurity region 11a and a 0013 An example embodiment of the present invention second impurity region 11b on a semiconductor Substrate 10. is directed to a method of fabricating a thin film, including The conventional PRAM 100 may further include a gate forming a GeSbTe thin film on a surface of a substrate by insulating layer 12 contacting the first and second impurity chemically reacting a first precursor including germanium regions 11a and 11b and a gate electrode layer 13. The gate (Ge), a second precursor including antimony (Sb), and a insulating layer 12 and the gate electrode layer 13 may each third precursor including tellurium (Te) in a reaction cham be stacked on the substrate 10. The first impurity region 11a ber and processing the surface of the GeSbTe thin film with may function as a source, and the second impurity region hydrogen plasma. 11b may function as a drain. 0014) Another example embodiment of the present 0008 Referring to FIG. 1, an insulating layer 15 may be invention is directed to a method of fabricating a thin film, formed on the first impurity region 11a, the gate electrode including injecting at least one precursor into a reactor layer 13 and the second impurity region 11b. A contact plug chamber and depositing the at least one precursor onto a 14 may penetrate the insulating layer 15 to contact the Substrate within the reactor chamber using a chemical vapor second impurity region 11b. A lower electrode 16 may be deposition process so as to form the thin film. mounted on the contact plug 14. A phase-change film 17 and an upper electrode 18 may be formed on the lower electrode BRIEF DESCRIPTION OF THE DRAWINGS 16. 0015 The accompanying drawings are included to pro 0009. A conventional process for storing data in the vide a further understanding of the invention, and are PRAM 100 of FIG. 100 will now be described. Heat, which incorporated in and constitute a part of this specification. may be measured in Joules, may be generated in an area The drawings illustrate example embodiments of the present where the phase-change film 17 contacts the lower electrode invention and, together with the description, serve to explain 16 due to a current Supplied through the second impurity principles of the present invention. US 2006/0172083 A1 Aug. 3, 2006 0016 FIG. 1 illustrates a cross-sectional view of a con ing as commonly understood by one of ordinary skill in the ventional phase-change random access memory (PRAM). art to which this invention belongs. It will be further understood that terms, such as those defined in commonly 0017 FIGS. 2A through 2D are schematic diagrams used dictionaries, should be interpreted as having a meaning illustrating a process of fabricating a thin film according to that is consistent with their meaning in the context of the an example embodiment of the present invention. relevant art and will not be interpreted in an idealized or DETAILED DESCRIPTION OF EXAMPLE overly formal sense unless expressly so defined herein. EMBODIMENTS OF THE PRESENT 0024 FIGS. 2A through 2D are schematic diagrams INVENTION illustrating a process of fabricating a thin film according to 0018 Detailed illustrative example embodiments of the present invention are disclosed herein. However, specific an example embodiment of the present invention. structural and functional details disclosed herein are merely 0025. In the example embodiment of FIG. 2A, a first representative for purposes of describing example embodi precursor including germanium (Ge), a second precursor ments of the present invention. Example embodiments of the including antimony (Sb), and a third precursor including present invention may, however, be embodied in many tellurium (Te) may be prepared. In an example, the first, alternate forms and should not be construed as limited to the second, and third precursors may include GeN(CH), embodiments set forth herein. SbN(CH), and Te(CH) CH, respectively. The first, 0.019 Accordingly, while example embodiments of the second, and third precursors may be injected into a reaction invention are susceptible to various modifications and alter chamber (e.g., sequentially injected one after the other, native forms, specific embodiments thereof are shown by simultaneously or concurrently injected, etc.) and may be way of example in the drawings and will herein be described chemically deposited on a surface of the substrate 20 of the in detail.
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