NANOSCALE ENGINEERING for the DESIGN of EFFICIENT INORGANIC-ORGANIC HYBRID THERMOELECTRICS a Dissertation by LANCE ROBERT BROCKW

Total Page:16

File Type:pdf, Size:1020Kb

NANOSCALE ENGINEERING for the DESIGN of EFFICIENT INORGANIC-ORGANIC HYBRID THERMOELECTRICS a Dissertation by LANCE ROBERT BROCKW NANOSCALE ENGINEERING FOR THE DESIGN OF EFFICIENT INORGANIC-ORGANIC HYBRID THERMOELECTRICS A Dissertation by LANCE ROBERT BROCKWAY Submitted to the Office of Graduate and Professional Studies of Texas A&M University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Chair of Committee, Sreeram Vaddiraju Committee Members, Rusty Harris Tahir Cagin Mustafa Akbulut Head of Department, Nazmul Karim May 2014 Major Subject: Chemical Engineering Copyright 2014 Lance Robert Brockway ABSTRACT Research aimed at enhancing the thermoelectric performance of semiconductors comprised of only earth-abundant elements has recently come under renewed focus as these materials systems offer a cost-effective path for scavenging waste heat. In light of the prediction that nanostructuring could increase the thermoelectric performance of materials; semiconductor nanowires comprised of non-toxic, low cost, and earth- abundant elements were synthesized and studied for their thermoelectric performance. For accomplishing this task, zinc phosphide (Zn3P2), zinc antimonide (Zn4Sb3), and zinc oxide (ZnO) nanowires were synthesized on the gram-quantity scale. Post-synthesis decomposition techniques were developed to controllably reduce the nanowire diameter and to create nanotubes. This decrease in nanowire diameter comes at an additional cost of an exponential decrease in surface stability. To combat this, a vapor phase surface passivation technique was developed to protect the nanowire surfaces from degradation and agglomeration. Finally, gram quantities of both functionalized and unfunctionalized nanowires were compressed into dense nanobulk pellets and characterized for their thermoelectric performance. The reactive vapor transport synthesis technique resulted in gram-quantities of single-crystalline nanowires with consistent 20 nm diameters. The nanowire diameters were further reduced to create sub-5 nm quantum wires and nanotubes using controlled decomposition. A self-consistent mechanism to describe this phenomenon was proposed. The nanowires were further surface-functionalized with various organic molecules to ii prevent surface degradation and to control the interfacial transport properties within the consolidated nanowire-pellets. The stability enhancement of the nanowires using this vapor-phase self-assembled monolayer technique was shown using traditional organic characterization techniques and suspension stability. Zn3P2 and ZnO nanowires were then hot-pressed and spark plasma sintered, respectively, into nanobulk pellets. It was observed that the nanowires in the Zn3P2 pellet did not break upon compaction, but bent elastically to achieve their sintered density; this was confirmed using a single nanowire inside a TEM. The thermoelectric performance of the functionalized nanowires was shown to be 3-fold higher than that of unfunctionalized nanowires due to less nanowire surface oxidation. Finally, the ZnO nanowire-bulk pellets were optimally-doped resulting in a 30% decrease in thermal conductivity compared to the bulk and the highest reported n-type oxide zT to date of 0.60. iii ACKNOWLEDGEMENTS I would like to thank the Vaddiraju research group for all of their help, guidance, and support throughout this research project including, but not limited to, Sreeram Vaddiraju, Yongmin Kang, Venkata Vasiraju, and Maxime Van Laer. Additionally I would like to thank Jean-Pierre Fleurial and Sabah Bux of the NASA Jet Propulsion Laboratory for their generosity in helping with all of the thermoelectric materials characterization and facilities use. Also thanks to Jacek Jasinski of the Conn Center for Renewable Energy at the University of Louisville for his help with the transmission electron microscopy and data analysis. Finally, I would like to thank my family for their encouragement throughout the entirety of this project. iv NOMENCLATURE 4-ATP 4-Aminothiophenol 3DT 3-Propanedithiol BDT p-Benzenedithiol COD Crystallography Open Database Cp Heat Capacity CVD Chemical Vapor Deposition D Diameter D0 Initial Diameter DSC Differential Scanning Calorimetry EB Energy Barrier EDS Energy Dispersive Spectroscopy Eg Bandgap FFT Fast Fourier Transform FTIR Fourier-transform Infrared Spectroscopy h Planck’s Constant HR High Resolution kB Boltzmann’s Constant L Lorenz Number LFA Laser Flash Analyzer me Theoretical Electron Mass v m* Effective Electron Mass n Carrier Concentration NW Nanowire P Pressure S Seebeck Coefficient SAED Small Angle Electron Diffraction SAM Self-assembled Monolayer SEM Scanning Electron Microscopy SLV Solid-vapor-liquid SPS Spark Plasma Sintering STEM Scanning Transmission Electron Microscopy STM Scanning Tunneling Microscopy t Time T Temperature TE Thermoelectric TEG Thermoelectric Generator TEM Transmission Electron Microscopy THF Tetrahydrofuran UV-Vis Ultra-violet/Visible Spectroscopy VLS Vapor-liquid-solid XPS X-ray Photoelectron Spectroscopy XRD X-ray Diffraction vi zT Dimensionless Thermoelectric Figure of Merit α Absorption Coefficient α Thermal Diffusivity Δ Lattice mismatch η Reduced Fermi-level κ Total Thermal Conductivity κl Lattice Thermal Conductivity κe Electronic Thermal Conductivity μ Hall Mobility ν Frequency ρ Electrical Resistivity ρ Density σ Electrical Conductivity vii TABLE OF CONTENTS Page ABSTRACT .......................................................................................................................ii ACKNOWLEDGEMENTS .............................................................................................. iv NOMENCLATURE ........................................................................................................... v TABLE OF CONTENTS ............................................................................................... viii LIST OF FIGURES ........................................................................................................... xi LIST OF TABLES .........................................................................................................xvii CHAPTER I INTRODUCTION ....................................................................................... 1 CHAPTER II LITERATURE AND BACKGROUND .................................................... 6 Waste Heat Recovery Using Thermoelectrics ............................................................... 6 Nanowire Thermoelectrics ............................................................................................. 8 Selection of Materials..................................................................................................... 9 Nanowire Synthesis and Diameter Control .................................................................. 11 Surface Passivation ...................................................................................................... 12 Nanobulk Materials ...................................................................................................... 13 CHAPTER III NANOWIRE SYNTHESIS AND CHARACTERIZATION METHODS ....................................................................................................................... 15 Introduction .................................................................................................................. 15 Nanowire Synthesis Methods ....................................................................................... 16 GaN Nanowire Synthesis ......................................................................................... 16 II-V Nanowire Synthesis .......................................................................................... 18 Nanowire Characterization Techniques ....................................................................... 21 Nanowire Consolidation Techniques ........................................................................... 22 Thermoelectric Performance Characterization............................................................. 23 CHAPTER IV POST-SYNTHESIS FORMATION OF QUANTUM WIRES .............. 24 Introduction .................................................................................................................. 24 Decomposition Methods .............................................................................................. 26 Results .......................................................................................................................... 27 viii Nanowire Synthesis .................................................................................................. 27 Nanowire Diameter Reduction ................................................................................. 28 Decomposition Mechanism and Kinetics ................................................................. 30 In situ TEM Decomposition ..................................................................................... 39 Bandgap Blue-Shift .................................................................................................. 40 Conclusion .................................................................................................................... 43 CHAPTER V POST-SYNTHESIS NANOTUBE FORMATION ................................. 44 Introduction .................................................................................................................. 44 Decomposition Methods .............................................................................................. 45 Results .........................................................................................................................
Recommended publications
  • (12) Patent Application Publication (10) Pub. No.: US 2015/0060952 A1 Takulapalli Et Al
    US 20150.060952A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2015/0060952 A1 Takulapalli et al. (43) Pub. Date: Mar. 5, 2015 (54) FIELD EFFECT TRANSISTOR, DEVICE Publication Classification INCLUDING THE TRANSISTOR, AND METHODS OF FORMING AND USING SAME (51) Int. Cl. GOIN 27/214 (2006.01) (71) Applicants: Bharath Takulapalli, Chandler, AZ GOIN33/543 (2006.01) (US); INANOBIO LLC, Tempe, AZ (52) U.S. Cl. (US) CPC ........ G0IN 27/414 (2013.01); G0IN33/54366 72) Inventors: Bharath Takulapalli, Chandler, AZ USPC (2013.01); G0IN 27/4145257/253:438/49 (2001) (US); Abhinav Jain, Tempe, AZ (US) " ' " s (21) Appl. No.: 14/391,661 (57) ABSTRACT (22) PCT Filed: Apr. 9, 2013 (86). PCT No.: PCT/US2013/035852 The present disclosure provides an improved field effect tran S371 (c)(1), sistor and device that can be used to sense and characterize a (2) Date: Oct. 9, 2014 variety of materials. The field effect transistor and/or device including the transistor may be used for a variety of applica Related U.S. Application Data tions, including genome sequencing, protein sequencing, bio (60) Provisional application No. 61/621,966, filed on Apr. molecular sequencing, and detection of ions, molecules, 9, 2012, provisional application No. 61/802,235, filed chemicals, biomolecules, metal atoms, polymers, nanopar on Mar. 15, 2013. ticles and the like. - 33. 8 : Patent Application Publication Mar. 5, 2015 Sheet 1 of 10 US 2015/0060952 A1 s sa SSSS Patent Application Publication Mar. 5, 2015 Sheet 2 of 10 US 2015/0060952 A1 s Patent Application Publication Mar.
    [Show full text]
  • Free Download
    ALB Materials Inc 2360 Corporate Circle . Suite 400 Website: www.albmaterials.com Henderson, NV 89074-7739 E-mail: [email protected] Item No. Product Name CAS Number Formula Purity ALB‐semi‐AlSb Aluminum Antimonide [25152‐52‐7] AlSb 5N ALB‐semi‐Al2Se3 Aluminum Selenide [1302‐82‐5] Al2Se3 5N ALB‐semi‐Al2S3 Aluminum Sulfide [1302‐81‐4] Al2S3 5N ALB‐semi‐Al2Te3 Aluminum Telluride [12043‐29‐7] Al2Te3 5N ALB‐semi‐Sb Antimony [7440‐36‐0] Sb 5N, 6N ALB‐semi‐Sb2Se3 Antimony Selenide [1315‐05‐5] Sb2Se3 5N ALB‐semi‐Sb2S3 Antimony Sulfide [1345‐04‐6] Sb2S3 5N ALB‐semi‐Sb2Te3 Antimony Telluride [1327‐50‐0] Sb2Te3 4N, 5N ALB‐semi‐SbI3 Antimony(III) Iodide [7790‐44‐5] SbI3 4N ALB‐semi‐Sb2O3 Antimony(III) Oxide [1309‐64‐4] Sb2O3 5N ALB‐semi‐Sb2O5 Antimony(V) Oxide [1314‐60‐9] Sb2O5 5N ALB‐semi‐As2Se3 Arsenic Selenide [1303‐36‐2] As2Se3 5N ALB‐semi‐As2S3 Arsenic Sulfide [1303‐33‐9] As2S3 5N ALB‐semi‐Bi2O3 Bismuth Oxide [1304‐76‐3] Bi2O3 5N ALB‐semi‐Bi2Se3 Bismuth Selenide [12068‐69‐8] Bi2Se3 5N ALB‐semi‐Bi2S3 Bismuth Sulfide [1345‐07‐9] Bi2S3 5N ALB‐semi‐Bi2Te3 Bismuth Telluride [1304‐82‐1] Bi2Te3 4N, 5N ALB‐semi‐Cd Cadmium [7440‐43‐9]Inc Cd 5N, 6N, 7N ALB‐semi‐CdSb Cadmium Antimonide [12050‐27‐0] CdSb 5N ALB‐semi‐Cd3As2 Cadmium Arsenide [12006‐15‐4] Cd3As2 5N ALB‐semi‐CdSe Cadmium Selenide [1306‐24‐7] CdSe 4N, 5N ALB‐semi‐Cd2SnO4 Cadmium Stannate [12185‐56‐7] Cd2SnO4 5N ALB‐semi‐CdS Cadmium Sulfide [1306‐23‐6] CdS 4N, 5N ALB‐semi‐CdTe Cadmium Telluride [1306‐25‐8] CdTe 5N ALB‐semi‐Cu2S Copper Sulfide [22205‐45‐4] Cu2S 5N ALB‐semi‐GaSb Gallium Antimonide
    [Show full text]
  • Semiconductor and Magnetic Material 3
    Semiconductor and 11 Magnetic Material 2 Electronic Devices Circuits and Applications 1.1 INTRODUCTION Semiconductors are materials having electrical conductivities between those of good conductors and insulators. Semiconductors resistivity varies from 10–5 to 10+4 m. Similarly resistivity range values 10–8 to 10+6 m for conductors and from 107 to 108 m for insulators. Germanium (Ge) and Silicon (Si) are the most commonly used semiconductors and belong to Group-IV of the periodic table. They have resistivity of about 0.6 and 1.5 × 103 m respectively. Also there are certain compound semiconductors such as gallium arsenide (GaAs), indium phosphide (InP), cadmium sulphide (CdS), etc. They are formed by the combination of the elements of groups III and V. Small band gap is another important characteristic of semiconductors. Also the semiconductors have negative temperature coefficient of resistance because the number of carriers in a semiconductor will increase significantly with temperature, resulting in reduction of the resistance of the semiconductor. 1.2 SEMICONDUCTOR MATERIALS (GROUP-IV) Semiconductors are materials having electrical conductivities between those of good conductors and insulators. The elemental semiconductor such as germanium (Ge) and silicon (Si) belong to Group-IV of the periodic table and have resistivity of about 0.6 and 1.5 × 103 cm respectively. The energy band gaps of these elements of Group-IV at 0 K are given as below: C (diamond) → 5.51 eV Ge → 0.75 eV Si → 1.16 eV Sn (grey) → 0.08 eV Pd → ≈ eV We may say from above list that at room temperature (i.e., 0 K) diamond behaves as an insulator but Ge and Si are treated as semiconductors.
    [Show full text]
  • Sem Icond Uctors: Data Handbook
    Otfried Madelung Sem icond uctors: Data Handbook 3rdedition Springer Short table of contents (for a more detailed table of contents see the following pages) A Introduction 1 General remarks to the structure of the volume .................................................................................... 1 2 Physical quantities tabulated in this volume ......................................................................................... 2 B Tetrahedrally bonded elements and compounds 1 Elements ofthe IVth group and IV-IV compounds ................................................ ....................... 7 2 111-V compounds .................................................................. 3 11-VI compounds ..................................................................................................... 4 I-VI1 compounds .................................................. ...................................................... 245 5 II12-V13 compounds .................................................................................................. 6 I-III-V12 compounds ..................................................................... 7 II-IV-V2 compounds ......................... ............................................................................... 329 8 I2-IV-VI3 compounds .......................................................................... ............................. 359 9 13-V-vI4 compounds ......................... ...................................................................................... 367
    [Show full text]
  • List of Semiconductor Materials - Wikipedia, the Free Encyclopedia Page 1 of 4
    List of semiconductor materials - Wikipedia, the free encyclopedia Page 1 of 4 List of semiconductor materials From Wikipedia, the free encyclopedia Semiconductor materials are insulators at absolute zero temperature that conduct electricity in a limited way at room temperature. The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties in a controllable way. Because of their application in devices like transistors (and therefore computers) and lasers, the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. The most commonly used semiconductor materials are crystalline inorganic solids. These materials can be classified according to the periodic table groups from which their constituent atoms come. Semiconductor materials are differing by their properties. Compound semiconductors have advantages and disadvantages in comparison with silicon. For example gallium arsenide has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows operation of power devices at higher temperatures, and gives lower thermal noise to low power devices at room temperature; its direct band gap gives it more favorable optoelectronic properties than the indirect band gap of silicon; it can be alloyed to ternary and quaternary compositions, with adjustable band gap width, allowing light emission at chosen wavelengths, and allowing e.g. matching to wavelengths with lowest losses in optical fibers. GaAs can be also grown in a semiinsulating form, which is suitable as a lattice-matching insulating substrate for GaAs devices. Conversely, silicon is robust, cheap, and easy to process, while GaAs is brittle, expensive, and insulation layers can not be created by just growing an oxide layer; GaAs is therefore used only where silicon is not sufficient.[1] Some materials can be prepared with tunable properties, e.g.
    [Show full text]
  • (12) United States Patent 20Um
    USO08057654B2 (12) United States Patent (10) Patent No.: US 8,057,654 B2 M00re et al. (45) Date of Patent: Nov. 15, 2011 (54) ELECTRODEPOSITION OF DIELECTRIC 3,793,278 A 2f1974 De Bona COATINGS ON SEMCONDUCTIVE 3,928, 157 A 12/1975 Suematsu et al. 3,947.338 A 3, 1976 Jerabek et al. SUBSTRATES 3,947,339 A 3, 1976 Jerabek et al. 3,962,165 A 6, 1976 Bosso et al. (75) Inventors: Kelly L. Moore, Dunbar, PA (US); Michael J. Pawlik, Glenshaw, PA (US); (Continued) Michael G. Sandala, Pittsburgh, PA (US); Craig A. Wilson, Allison Park, PA FOREIGN PATENT DOCUMENTS (US) EP OO12463 A1 6, 1980 (73) Assignee: PPG Industries Ohio, Inc., Cleveland, OTHER PUBLICATIONS OH (US) Kohler, E. P. "An Apparatus for Determining Both the Quantity of (*) Notice: Subject to any disclaimer, the term of this Gas Evolved and the Amount of Reagent Consumed in Reactions patent is extended or adjusted under 35 with Methyl Magnesium Iodide'. J. Am. Chem. Soc., 1927, 49 (12), U.S.C. 154(b) by 345 days. 3181-3188, American Chemical Society, Washington, D.C. (21) Appl. No.: 12/405,299 Primary Examiner — Alexa Neckel (22) Filed: Mar 17, 2009 Assistant Examiner — Brian Cohen (65) Prior Publication Data (74) Attorney, Agent, or Firm — Robert P. Lenart US 2009/O236231 A1 Sep. 24, 2009 (57) ABSTRACT Related U.S. Application Data A method includes: immersing a semiconductive Substrate in (60) Provisional application No. 61/037,814, filed on Mar. an electrodeposition composition, wherein at least 20 percent 19, 2008. by weight of resin Solids in the composition is a highly cross (51) Int.
    [Show full text]
  • 074-614-P1C STM-2XM Operating Manual
    Cover Page OPERATING MANUAL STM-2XM Rate and Thickness Monitor PN 074-614-P1C Trademarks The trademarks of the products mentioned in this manual are held by the companies that produce them. Windows® and Microsoft® are registered trademarks of Microsoft Corporation. Inconel® is a registered trademark of Inco Alloys International, Huntington, WV. LabVIEWTM is a trademark of National Instruments Corporation. Sycon InstrumentsTM is a trademark of INFICON. All other brand and product names are trademarks or registered trademarks of their respective companies. Disclaimer The information contained in this manual is believed to be accurate and reliable. However, INFICON assumes no responsibility for its use and shall not be liable for any special, incidental, or consequential damages related to the use of this product. Due to our continuing program of product improvements, specifications are subject to change without notice. Copyright ©2016 All rights reserved. Reproduction or adaptation of any part of this document without permission is unlawful. Declaration Of Conformity Page 1 Warranty Warranty Standard INFICON One Year Page 1 WARRANTY AND LIABILITY - LIMITATION: Seller warrants the products manufactured by it, or by an affiliated company and sold by it, and described on the reverse hereof, to be, for the period of warranty coverage specified below, free from defects of materials or workmanship under normal proper use and service. The period of warranty coverage is specified for the respective products in the respective Seller instruction
    [Show full text]
  • 074-613-P1C STM-2 Operating Manual
    OPERATING MANUAL STM-2 Rate and Thickness Monitor PN 074-613-P1C PN 074-613-P1CTOC - #1 - # Trademarks The trademarks of the products mentioned in this manual are held by the companies that produce them. Windows® and Microsoft® are registered trademarks of Microsoft Corporation. Inconel® is a registered trademark of Inco Alloys International, Huntington, WV. LabVIEW™ is a trademark of National Instruments Corporation. Sycon Instruments™ is a trademark of INFICON, Inc. All other brand and product names are trademarks or registered trademarks of their respective companies. Disclaimer The information contained in this manual is believed to be accurate and reliable. However, INFICON assumes no responsibility for its use and shall not be liable for any special, incidental, or consequential damages related to the use of this product. Due to our continuing program of product improvements, specifications are subject to change without notice. Copyright ©2016 All rights reserved. Reproduction or adaptation of any part of this document without permission is unlawful. Declaration of Conformity Warranty Warranty WARRANTY AND LIABILITY - LIMITATION: Seller warrants the products manufactured by it, or by an affiliated company and sold by it, and described on the reverse hereof, to be, for the period of warranty coverage specified below, free from defects of materials or workmanship under normal proper use and service. The period of warranty coverage is specified for the respective products in the respective Seller instruction manuals for those products
    [Show full text]
  • Pellets C • Vacuum Deposition Grade Pellets
    C MATERIALS PELLETS C • Vacuum Deposition Grade Pellets ............... C 03 MATERIALS / INORGANICS & THIN FILMS GUIDE C 01 MATERIALS PELLETS Vacuum Deposition Grade Pellets Granules, pellets, pieces, tablets and shaped sources are available in virtually any known inorganic composition and range of purities. PURITY CUSTOM MANUFACTURING Purity is based on spectrographic values of trace metals The pellets sizes and purity listed are those most com- found, i. e. 99.999% pure indicates that 0.001% (10 ppm) monly used and called for. However Neyco can offer near- total of trace metals have been observed. 99.9% pure ly any range of dimensions desired, with purity that you implies a total metallic impurity content of 0.1% (1000 need on request. ppm). Gases, carbon and sulfur are not included in the analysis but can possibly be determined if needed. CERTIFICATE OF ANALYSIS AND MSDS All items shipped are accompanied by an analysis certifi- cate. The analysis is specific to the actual lot of material being sent and not a “typical analysis”, unless specifically stated. All dangerous materials shipped are accompanied by a Material Safety Data Sheet (MSDS). C 02 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALS PELLETS Vacuum Deposition Grade Pellets C Vacuum Deposition Grade Pellets Al 13 ALUMINUM Base CHEMICAL FORMULA DESCRIPTION PURITY* Aluminum Al 10 mm Ø x 8 mm 99.995 / 99.999 1.6 mm Ø x 0.5 mm / 3.9 mm Ø x2.5 mm / Aluminum Al 99.999 9.5 mm Ø x 3.2 mm / 6 mm Ø x 6 mm Aluminum Al 3 mm Ø x 3 mm / 3 mm Ø x 6 mm / 99.99 / 99.999 Aluminum Al 2-10
    [Show full text]
  • Environmental Health Criteria 221
    This report contains the collective views of international groups of experts and does not necessarily represent the decisions or the stated policy of the United Nations Environment Programme, the International Labour Organization, or the World Health Organization. Environmental Health Criteria 221 ZINC First draft prepared by Drs B. Simon-Hettich and A. Wibbertmann, Fraunhofer Institute of Toxicology and Aerosol Research, Hanover, Germany, Mr D. Wagner, Department of Health and Family Services, Canberra, Australia, Dr L. Tomaska, Australia New Zealand Food Authority, Canberra, Australia, and Mr H. Malcolm, Institute of Terrestrial Ecology, Monks Wood, England. Published under the joint sponsorship of the United Nations Environment Programme, the International Labour Organization, and the World Health Organization, and produced within the framework of the Inter-Organization Programme for the Sound Management of Chemicals. World Health Organization Geneva, 2001 The International Programme on Chemical Safety (IPCS), established in 1980, is a joint venture of the United Nations Environment Programme (UNEP), the International Labour Organization (ILO), and the World Health Organization (WHO). The overall objectives of the IPCS are to establish the scientific basis for assessment of the risk to human health and the environment from exposure to chemicals, through international peer-review processes, as a prerequisite for the promotion of chemical safety, and to provide technical assistance in strengthening national capacities for the sound management
    [Show full text]
  • Semiconductors: Data Handbook H Springer-Verlag Berlin Heidelberg Gmbh Otfried Madelung
    Semiconductors: Data Handbook H Springer-Verlag Berlin Heidelberg GmbH Otfried Madelung Semiconductors: Data Handbook 3rd edition 123 Proff. Dr. Ot frie d Madelung Am Kornacker 18 35041 Marburg Germany The 1st ed. was published in 2 volumes in the series “Data in Science and Technology”. The 2nd revised ed. was published under title “Semiconductors – Basic Data” . Additional material to this book can be downloaded from http://extras.springer.com ISBN 978-3-642-62332-5 ISBN 978-3-642-18865-7 (eBook) DOI 10.1007/978-3-642-18865-7 Cataloging-in-Publication Data appliedf fof r Bibliographic infformation published by Die Deutsche Bibliothek Die Deutsche Bibliothek lists this publication in the Deutsche Nationalbibliograffie ; detailed bibliographic data is available in the Internet at <http://dnb.ddb.de>. This work is subject to copyright. All rights are reserved, whether the whole or part of tfhe material is concerned, speciffically the rights off trans lation, reprinting, reuse of if llustrations, recitation, broadcasting, reproduction on microfiff lm or in other ways, and storage in data banks. Duplication of tfhis publication or parts thereof is permitte d only under the provisions of tfhe German Copyright Law offSeptem ber 9, 1965, in its current version, and permission for use must always be obtained from Springer-Verlag..Vio lations are liable for prosecution under German Copyright Lawaaw .w © Springer-Verlag Berlin Heidelberg 1991, 1992, 1996, and 2004 Originally published by Springer-Verlag Berlin Heidelberg New York in 2004 Softcover reprint of the hardcover 3rd edition 2004 http://www.springeronline.com The use of general descriptive names, registered names, trademarks,, etc.
    [Show full text]
  • Danh Mục Số Cas A
    CÔNG TY CỔ PHẦN CÔNG NGHIỆP VIỆT XUÂN NHÀ CUNG CẤP KHÍ HELI, KHÍ METAN, KHÍ SF6, KHÍ PROPAN Số 80B Nguyễn Văn Cừ - Long Biên - Hà Nội - Việt Nam www.vietxuangas.com.
    [Show full text]