The Masters of Light
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Invention of Digital Photograph
Invention of Digital photograph Digital photography uses cameras containing arrays of electronic photodetectors to capture images focused by a lens, as opposed to an exposure on photographic film. The captured images are digitized and stored as a computer file ready for further digital processing, viewing, electronic publishing, or digital printing. Until the advent of such technology, photographs were made by exposing light sensitive photographic film and paper, which was processed in liquid chemical solutions to develop and stabilize the image. Digital photographs are typically created solely by computer-based photoelectric and mechanical techniques, without wet bath chemical processing. The first consumer digital cameras were marketed in the late 1990s.[1] Professionals gravitated to digital slowly, and were won over when their professional work required using digital files to fulfill the demands of employers and/or clients, for faster turn- around than conventional methods would allow.[2] Starting around 2000, digital cameras were incorporated in cell phones and in the following years, cell phone cameras became widespread, particularly due to their connectivity to social media websites and email. Since 2010, the digital point-and-shoot and DSLR formats have also seen competition from the mirrorless digital camera format, which typically provides better image quality than the point-and-shoot or cell phone formats but comes in a smaller size and shape than the typical DSLR. Many mirrorless cameras accept interchangeable lenses and have advanced features through an electronic viewfinder, which replaces the through-the-lens finder image of the SLR format. While digital photography has only relatively recently become mainstream, the late 20th century saw many small developments leading to its creation. -
A High Full Well Capacity CMOS Image Sensor for Space Applications
sensors Article A High Full Well Capacity CMOS Image Sensor for Space Applications Woo-Tae Kim 1 , Cheonwi Park 1, Hyunkeun Lee 1 , Ilseop Lee 2 and Byung-Geun Lee 1,* 1 School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea; [email protected] (W.-T.K.); [email protected] (C.P.); [email protected] (H.L.) 2 Korea Aerospace Research Institute, Daejeon 34133, Korea; [email protected] * Correspondence: [email protected]; Tel.: +82-62-715-3231 Received: 24 January 2019; Accepted: 26 March 2019; Published: 28 March 2019 Abstract: This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 µm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 µm pixel pitch. Keywords: CMOS image sensors; wide dynamic range; multiple charge transfer; space applications; radiation damage effects 1. Introduction Imaging devices are essential components in the space environment for a range of applications including earth observation, star trackers on satellites, lander and rover cameras [1]. -
Lecture Notes 3 Charge-Coupled Devices (Ccds) – Part II • CCD
Lecture Notes 3 Charge-Coupled Devices (CCDs) { Part II • CCD array architectures and pixel layout ◦ One-dimensional CCD array ◦ Two-dimensional CCD array • Smear • Readout circuits • Anti-blooming, electronic shuttering, charge reset operation • Window of interest, pixel binning • Pinned photodiode EE 392B: CCDs{Part II 3-1 One-Dimensional (Linear) CCD Operation A. Theuwissen, \Solid State Imaging with Charge-Coupled Devices," Kluwer (1995) EE 392B: CCDs{Part II 3-2 • A line of photodiodes or photogates is used for photodetection • After integration, charge from the entire row is transferred in parallel to the horizontal CCD (HCCD) through transfer gates • New integration period begins while charge packets are transferred through the HCCD (serial transfer) to the output readout circuit (to be discussed later) • The scene can be mechanically scanned at a speed commensurate with the pixel size in the vertical direction to obtain 2D imaging • Applications: scanners, scan-and-print photocopiers, fax machines, barcode readers, silver halide film digitization, DNA sequencing • Advantages: low cost (small chip size) EE 392B: CCDs{Part II 3-3 Two-Dimensional (Area) CCD • Frame transfer CCD (FT-CCD) ◦ Full frame CCD • Interline transfer CCD (IL-CCD) • Frame-interline transfer CCD (FIT-CCD) • Time-delay-and-integration CCD (TDI-CCD) EE 392B: CCDs{Part II 3-4 Frame Transfer CCD Light−sensitive CCD array Frame−store CCD array Amplifier Output Horizontal CCD Integration Vertical shift Operation Vertical shift Horizotal shift Time EE 392B: CCDs{Part II 3-5 Pixel Layout { FT-CCD D. N. Nichols, W. Chang, B. C. Burkey, E. G. Stevens, E. A. Trabka, D. -
CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 2, FEBRUARY 1997 187 CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems Sunetra K. Mendis, Member, IEEE, Sabrina E. Kemeny, Member, IEEE, Russell C. Gee, Member, IEEE, Bedabrata Pain, Member, IEEE, Craig O. Staller, Quiesup Kim, Member, IEEE, and Eric R. Fossum, Senior Member, IEEE Abstract—A family of CMOS-based active pixel image sensors Charge-coupled devices (CCD’s) are currently the dominant (APS’s) that are inherently compatible with the integration of on- technology for image sensors. CCD arrays with high fill-factor, chip signal processing circuitry is reported. The image sensors small pixel sizes, and large formats have been achieved and were fabricated using commercially available 2-"m CMOS pro- cesses and both p-well and n-well implementations were explored. some signal processing operations have been demonstrated The arrays feature random access, 5-V operation and transistor- with charge-domain circuits [1]–[3]. However, CCD’s cannot transistor logic (TTL) compatible control signals. Methods of be easily integrated with CMOS circuits due to additional on-chip suppression of fixed pattern noise to less than 0.1% fabrication complexity and increased cost. Also, CCD’s are saturation are demonstrated. The baseline design achieved a pixel high capacitance devices so that on-chip CMOS drive electron- size of 40 "m 40 "m with 26% fill-factor. Array sizes of 28 28 elements and 128 128 elements have been fabricated and ics would dissipate prohibitively high power levels for large characterized. Typical output conversion gain is 3.7 "V/e for the area arrays (2–3 W). -
A Guide to Smartphone Astrophotography National Aeronautics and Space Administration
National Aeronautics and Space Administration A Guide to Smartphone Astrophotography National Aeronautics and Space Administration A Guide to Smartphone Astrophotography A Guide to Smartphone Astrophotography Dr. Sten Odenwald NASA Space Science Education Consortium Goddard Space Flight Center Greenbelt, Maryland Cover designs and editing by Abbey Interrante Cover illustrations Front: Aurora (Elizabeth Macdonald), moon (Spencer Collins), star trails (Donald Noor), Orion nebula (Christian Harris), solar eclipse (Christopher Jones), Milky Way (Shun-Chia Yang), satellite streaks (Stanislav Kaniansky),sunspot (Michael Seeboerger-Weichselbaum),sun dogs (Billy Heather). Back: Milky Way (Gabriel Clark) Two front cover designs are provided with this book. To conserve toner, begin document printing with the second cover. This product is supported by NASA under cooperative agreement number NNH15ZDA004C. [1] Table of Contents Introduction.................................................................................................................................................... 5 How to use this book ..................................................................................................................................... 9 1.0 Light Pollution ....................................................................................................................................... 12 2.0 Cameras ................................................................................................................................................ -
(PPS) • CMOS Photodiode Active Pixel Sensor (APS) • Photoga
Lecture Notes 4 CMOS Image Sensors CMOS Passive Pixel Sensor (PPS) • Basic operation ◦ Charge to output voltage transfer function ◦ Readout speed ◦ CMOS Photodiode Active Pixel Sensor (APS) • Basic operation ◦ Charge to output voltage transfer function ◦ Readout speed ◦ Photogate and Pinned Diode APS • Multiplexed APS • EE 392B: CMOS Image Sensors 4-1 Introduction CMOS image sensors are fabricated in \standard" CMOS technologies • Their main advantage over CCDs is the ability to integrate analog and • digital circuits with the sensor Less chips used in imaging system ◦ Lower power dissipation ◦ Faster readout speeds ◦ More programmability ◦ New functionalities (high dynamic range, biometric, etc) ◦ But they generally have lower perofrmance than CCDs: • Standard CMOS technologies are not optimized for imaging ◦ More circuits result in more noise and fixed pattern noise ◦ In this lecture notes we discuss various CMOS imager architectures • In the following lecture notes we discuss fabrication and layout issues • EE 392B: CMOS Image Sensors 4-2 CMOS Image Sensor Architecture Word Pixel: Row Decoder Photodetector & Readout treansistors Bit Column Amplifiers/Caps Output Column Mux Readout performed by transferring one row at a time to the column • storage capacitors, then reading out the row, one (or more) pixel at a time, using the column decoder and multiplexer In many CMOS image sensor architectures, row integration times are • staggerred by the row/column readout time (scrolling shutter) EE 392B: CMOS Image Sensors 4-3 CMOS Image Sensor -
EDS Celebrated Member — George Smith It Goes Without Saying That The
Spotlight On: EDS Celebrated Member — George Smith It goes without saying that the field of electron device engineering has revolutionized, and in many ways defines, 21st century life. As a part of EDS, each of us can take pride in our society’s members’ accomplishments. We should draw from them inspiration to advance our field and to achieve more because it is not only their work, but ours as well, that can help transform the world around us. It is in this spirit that the EDS Celebrated Member program was created, with the inaugural Celebrated Member Award presented to Electron Device Letters founding editor and 2009 Nobel laureate for Physics, George E. Smith. The presentation was made by EDS President, Renuka Jindal at the Photovoltaics Specialists Conference held in Hawaii in June. The audience in the packed reception hall was treated to George’s recounting of how he and his colleague Willard Boyle (a fellow EDS member and with whom George shares the 2009 Nobel Prize for Physics) developed the Charged-Coupled Device (CCD) at the famous Bell Laboratories in New Jersey. EDL Founding Editor and Nobel They were tasked with developing a new platform for information storage. The Laureate, George Smith device they initially sketched was an image sensor based on Einstein's photoelectric effect, in which arrays of photocells emit electrons in amounts proportional to the intensity of incoming light. The electron content of each photocell could then be read out, transforming an optical image into a digital one. The charge-coupled device they created gave rise to the first CCD-based video cameras, which appeared in the early 1970s. -
Beyond Einstein : New Jersey’S* Contributions to World Science and Technology
Beyond Einstein : New Jersey’s* Contributions to World Science and Technology * also New York City and Philadelphia Michael G. Littman Mechanical and Aerospace Engineering Princeton University 1 Since 1664 … • What radical innovations originate and thrive in NJ ? • Who are the key people ? • How has society changed ? 2 For this talk … • List NJ innovators, innovations, and organizations Since 1664 … • Select the most significant • What radical innovations originate and thrive in NJ ? • Group them • Who are the key people ? Common theme emerges – • How has society changed ? NJ contributions to origin and development of electric power and information networks is extensive 3 “ CEE 102 Engineering For this talk … in the Modern World” • List NJ innovators, DESIGN innovations, and organizations Structures Civil Machines Mechanical • Select the most significant Networks Electrical Processes Chemical • Group them DISCOVERY Physics Common theme emerges – Astronomy NJ contributions to origin and Chemistry development of electric power Geology and information networks is extensive No Life Science or Medicine 4 Edward Sorel – “People of Progress” – 20th Century (left to right): Philo T. Farnsworth, George Washington Carver, Jonas Salk, Henry Ford, Orville Wright, Wilbur Wright, Albert Einstein, Charles H. Townes, Charles Steinmetz, J. C. R. Licklider, John Von Neumann, William H. Gates III, Robert Goddard, James Dewey 5 Watson, Wallace Hume Carothers, Rachel Carson, Willis Carrier, Gertrude Elion, Edwin H. Armstrong, Robert Noyce Edward Sorel – “People of Progress” – 20th Century (left to right): Philo T. Farnsworth, George Washington Carver, Jonas Salk, Henry Ford, Orville Wright, Wilbur Wright, Albert Einstein, Charles H. Townes, Charles Steinmetz, J. C. R. Licklider, John Von Neumann, William H. -
Physiker-Entdeckungen Und Erdzeiten Hans Ulrich Stalder 31.1.2019
Physiker-Entdeckungen und Erdzeiten Hans Ulrich Stalder 31.1.2019 Haftungsausschluss / Disclaimer / Hyperlinks Für fehlerhafte Angaben und deren Folgen kann weder eine juristische Verantwortung noch irgendeine Haftung übernommen werden. Änderungen vorbehalten. Ich distanziere mich hiermit ausdrücklich von allen Inhalten aller verlinkten Seiten und mache mir diese Inhalte nicht zu eigen. Erdzeiten Erdzeit beginnt vor x-Millionen Jahren Quartär 2,588 Neogen 23,03 (erste Menschen vor zirka 4 Millionen Jahren) Paläogen 66 Kreide 145 (Dinosaurier) Jura 201,3 Trias 252,2 Perm 298,9 Karbon 358,9 Devon 419,2 Silur 443,4 Ordovizium 485,4 Kambrium 541 Ediacarium 635 Cryogenium 850 Tonium 1000 Stenium 1200 Ectasium 1400 Calymmium 1600 Statherium 1800 Orosirium 2050 Rhyacium 2300 Siderium 2500 Physiker Entdeckungen Jahr 0800 v. Chr.: Den Babyloniern sind Sonnenfinsterniszyklen mit der Sarosperiode (rund 18 Jahre) bekannt. Jahr 0580 v. Chr.: Die Erde wird nach einer Theorie von Anaximander als Kugel beschrieben. Jahr 0550 v. Chr.: Die Entdeckung von ganzzahligen Frequenzverhältnissen bei konsonanten Klängen (Pythagoras in der Schmiede) führt zur ersten überlieferten und zutreffenden quantitativen Beschreibung eines physikalischen Sachverhalts. © Hans Ulrich Stalder, Switzerland Jahr 0500 v. Chr.: Demokrit postuliert, dass die Natur aus Atomen zusammengesetzt sei. Jahr 0450 v. Chr.: Vier-Elemente-Lehre von Empedokles. Jahr 0300 v. Chr.: Euklid begründet anhand der Reflexion die geometrische Optik. Jahr 0265 v. Chr.: Zum ersten Mal wird die Theorie des Heliozentrischen Weltbildes mit geometrischen Berechnungen von Aristarchos von Samos belegt. Jahr 0250 v. Chr.: Archimedes entdeckt das Hebelgesetz und die statische Auftriebskraft in Flüssigkeiten, Archimedisches Prinzip. Jahr 0240 v. Chr.: Eratosthenes bestimmt den Erdumfang mit einer Gradmessung zwischen Alexandria und Syene. -
Micro* Color and Macro* Color RGB Tunable Filters for High-Resolution
PRODUCT NOTE RGB Tunable Filters Micro*Color and Macro*Color RGB Tunable Filters for High- Resolution Color Imaging Figure 1. High-resolution color image of pine cone stem at 10x magnification, taken with a Micro*Color™ slider and monochrome camera on a Zeiss Axioplan™ 2 microscope. Introduction Key Features Micro*Color™ RGB Tunable Filters turn your mono- • Solid-state design for rapid, vibrationless chrome camera into a high-resolution color imaging tuning system. The solid-state liquid crystal design allows • Better spatial resolution than conventional rapid, vibrationless switching between the red, “painted-pixel” CCD or CMOS cameras green, and blue color states, simulating the color- sensitivity curves of the human eye. The closer you • Variety of models for microscope or stand- look, the more you’ll notice that not only are images alone use taken with Micro*Color filter exceptionally accurate • Plug-and-play USB interface with simple in color rendition, but they also contain detail not serial command set reproducible using conventional color cameras. Figure 2. Left to right, Micro*Color sliders for Olympus BX/IX and Zeiss Axioskop™/ Axioplan, and Macro*Color 35 mm optics. True Color When You Need It Why is the Micro*Color Tunable RGB Filter with a The Micro*Color 0.65X coupler is designed for use on micro- Monochrome Camera Better Than a Conventional scopes with an available C-mount camera port. No other Color Camera? adapters are necessary. Micro*Color sliders fit into the analyzer Most digital color cameras utilize a single “painted-pixel” or similar slots on many common research microscope models. -
Digital Light Field Photography
DIGITAL LIGHT FIELD PHOTOGRAPHY a dissertation submitted to the department of computer science and the committee on graduate studies of stanford university in partial fulfillment of the requirements for the degree of doctor of philosophy Ren Ng July © Copyright by Ren Ng All Rights Reserved ii IcertifythatIhavereadthisdissertationandthat,inmyopinion,itisfully adequateinscopeandqualityasadissertationforthedegreeofDoctorof Philosophy. Patrick Hanrahan Principal Adviser IcertifythatIhavereadthisdissertationandthat,inmyopinion,itisfully adequateinscopeandqualityasadissertationforthedegreeofDoctorof Philosophy. Marc Levoy IcertifythatIhavereadthisdissertationandthat,inmyopinion,itisfully adequateinscopeandqualityasadissertationforthedegreeofDoctorof Philosophy. Mark Horowitz Approved for the University Committee on Graduate Studies. iii iv Acknowledgments I feel tremendously lucky to have had the opportunity to work with Pat Hanrahan, Marc Levoy and Mark Horowitz on the ideas in this dissertation, and I would like to thank them for their support. Pat instilled in me a love for simulating the flow of light, agreed to take me on as a graduate student, and encouraged me to immerse myself in something I had a passion for.Icouldnothaveaskedforafinermentor.MarcLevoyistheonewhooriginallydrewme to computer graphics, has worked side by side with me at the optical bench, and is vigorously carrying these ideas to new frontiers in light field microscopy. Mark Horowitz inspired me to assemble my camera by sharing his love for dismantling old things and building new ones. I have never met a professor more generous with his time and experience. I am grateful to Brian Wandell and Dwight Nishimura for serving on my orals commit- tee. Dwight has been an unfailing source of encouragement during my time at Stanford. I would like to acknowledge the fine work of the other individuals who have contributed to this camera research. Mathieu Brédif worked closely with me in developing the simulation system, and he implemented the original lens correction software. -
The Future Is Bright for CCD Sensors TELEDYNE IMAGING
The Future is Bright for CCD Sensors TELEDYNE IMAGING CCDs will Continue to Provide a Crucial Imaging Capability for Science omplementary metal-oxide- CMOS technology accounts for the semiconductor (CMOS) image majority of the visible wavelengths market, sensors now dominate the by revenue as highlighted by Yole Dévelop- Cimaging detector market, but pement Status of the CMOS Image Sensor there are industrial and scientific imaging (CIS) Industry 2018 report. applications where charge-coupled device However, while the economies of scale (CCD) imager sensors is still the preferred and sheer momentum behind CMOS sensor choice, from both technical and commer- development are huge — predominantly in cial perspectives. consumer applications — it is far too early According to market research company, to write off CCD sensors. Research and Markets, the global image As technologies and markets evolve, sensors market is expected to reach $23.2 what is technically feasible and what is billion by 2023 (as of April 2018). commercially viable also evolve, and many Continued market growth is mainly imaging applications in spectroscopy, driven by rising demand for dual-camera microscopy, medium to large ground mobile phones, the development of telescopes and space science will continue low-power and compact image sensors, to be better served by CCDs. and the increased use of image sensing devices in biometric applications. Teledyne e2v CCD Bruyères detector in handling jig for the ESA PLATO mission. 2 teledyneimaging.com THE FUTURE IS BRIGHT FOR CCD SENSORS Scientific applications include optical electron microscopy. 3 TELEDYNE IMAGING Teledyne e2v CIS120 Invented in 1969, Charge-coupled devices CCD AND CMOS BASICS CMOS general purpose where originally designed as a memory CCD and CMOS are both silicon based image sensor for space storage device in the United States at AT&T detector arrays: applications.